@article{CTT100644931,
  author = {Takayuki Iwasaki and Yuto Hoshino and Kouhei Tsuzuki and Hiromitsu Kato and Toshiharu Makino and Masahiko Ogura and Daisuke Takeuchi and Tsubasa Matsumoto and Hideyo Okushi and Satoshi Yamasaki and Mutsuko Hatano},
  title = {Diamond Junction Field-Effect Transistors with Slectively Grown n+-Side Gates},
  journal = {Appl. Phys. Express},
  year = 2012,
}

@inproceedings{CTT100695208,
  author = {M. Hatano and T. Iwasaki and K. Tsuzuki and K. Sato and H. Kato and T. Makino and M. Ogura and D. Takeuchi and H. Okushi and S. Yamasaki},
  title = {High voltage and high temperature operation of diamond junction FETs with the lateral p-n junctions},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100668858,
  author = {岩崎孝之 and 星野雄斗 and 都築康平 and 加藤宙光 and 牧野俊晴 and 小倉政彦 and 竹内大輔 and 大串秀世 and 山崎聡 and 波多野睦子},
  title = {ダイヤモンド接合型電界効果トランジスタの高温・高電圧特性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100665405,
  author = {T. Iwasaki and Y.Hoshino and K.Tsuzuki and H.Kato and T.Makino and M.Ogura and D.Takechi and H.Okushi and S.Yamazaki and M.Hatano},
  title = {High Temperature Performance of Diamond Junction Field Effect Transistors},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100648127,
  author = {星野雄斗 and 岩崎孝之 and 都築康平 and 加藤宙光 and 牧野俊晴 and 小倉政彦 and 竹内大輔 and 大串秀世 and 山崎聡 and 波多野睦子},
  title = {ダイヤモンド横型接合FETの温度特性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100653972,
  author = {K. Tsuzuki and T. Iwasaki and Y. Hoshino and H. Kato and T. Makino and M. Ogura and D. Takeuchi and S. Yamasaki and M. Hatano},
  title = {Diamond JFET Fabricated by Selectively Grown n+ Diamond Gates},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100648128,
  author = {星野雄斗 and 都築康平 and 加藤宙光 and 牧野俊晴 and 小倉政彦 and 岩崎孝之 and 竹内大輔 and 大串秀世 and 山崎聡 and 波多野睦子},
  title = {n+選択成長を利用したダイヤモンド接合型電界効果トランジスタの試作とデバイス特性の解析},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100648110,
  author = {都築康平 and 加藤宙光 and 牧野俊晴 and 小倉政彦 and 竹内大輔 and 大串秀世 and 星野雄斗 and 岩崎孝之 and 山崎聡 and 波多野睦子},
  title = {n型ダイヤモンド半導体の選択成長法を用いた横型接合FET},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100648107,
  author = {都築 康平 and 加藤宙光 and 牧野俊晴 and 小倉政彦 and 星野雄斗 and 岩崎孝之 and 山崎聡 and 波多野睦子},
  title = {n型ダイヤモンド半導体の選択成長を適用した横型p-nダイオード},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100644982,
  author = {Takayuki Iwasaki and Yuto Hoshino and Kouhei Tsuzuki and H. Kato and T. Makino and M. Ogura and D. Takeuchi and T. Matsumoto and H. Okushi and S. Yamasaki and Mutsuko Hatano},
  title = {Diamond Semiconductor JFETs by Selectively Grown n+-Diamond Side Gates for Next Generation Power Devices},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100644980,
  author = {Yuto Hoshino and Takayuki Iwasaki and Kouhei Tsuzuki and H. Kato and T. Makino and M. Ogura and D. Takeuchi and T. Matsumoto and S. Yamasaki and Mutsuko Hatano},
  title = {Diamond Lateral p-n Diodes and JFETs by Selective Growth of n+ Diamond},
  booktitle = {},
  year = 2012,
}