@article{CTT100642251,
  author = {Atsushi Kato and Toru Kanazawa and Shunsuke Ikeda and Yosiharu Yonai and Yasuyuki Miyamoto},
  title = {Reduction of access resistance of InP/InGaAs composite-channel MOSFET with back source electrode},
  journal = {IEICE Trans. Electron.},
  year = 2012,
}

@article{CTT100628822,
  author = {R. Terao and T. Kanazawa and S. Ikeda and Y. Yonai and A. Kato and Y. Miyamoto},
  title = {InP/InGaAs Composite MOSFETs with Regrown Source and Al2O3 gate dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm},
  journal = {Applied Phys. Exp.},
  year = 2011,
}

@inproceedings{CTT100693229,
  author = {宮本恭幸 and 金澤 徹 and 米内義晴 and 加藤 淳 and 藤松基彦 and 柏野壮志 and 大澤一斗 and 大橋一水},
  title = {低電圧/高速動作にむけたInGaAs MOSFETソース構造},
  booktitle = {IEICE Technical Report},
  year = 2014,
}

@inproceedings{CTT100679169,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and K. Ohsawa and Y. Mishima and T. Irisawa and M. Oda and T. Tezuka},
  title = {(Invited) Growth Process for High Performance of InGaAs MOSFETs},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679167,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and A. Kato and M. Fujimatsu and M. Kashiwano and K. Ohsawa and K. Ohashi},
  title = {(Invited) InGaAs MOSFET Source Structures Toward High Speed/low Power Applications},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679165,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and A. Kato and K. Ohsawa and M. Oda and T. Irisawa and T. Tezuka},
  title = {Heavily doped epitaxially grown source in InGaAs MOSFET for high drain current density},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659719,
  author = {A. Kato and T. Kanazawa and Eiji Uehara and Y. Yonai and Y. Miyamoto},
  title = {Sub-50-nm InGaAs MOSFET with n-InP source on Si substrate},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659775,
  author = {加藤淳 and 米内義晴 and 金澤徹 and 宮本恭幸},
  title = {Si 基板上 InGaAs-MOSFET の微細化に関する研究},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659767,
  author = {加藤淳 and 米内義晴 and 金澤徹 and 宮本恭幸},
  title = {Si 基板上 InGaAs-MOSFET の微細化に関する研究},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659765,
  author = {佐賀井健 and 米内義晴 and 宮本恭幸},
  title = {InGaAs チャネル MOSFET の EOT 削減による 伝達コンダクタンス向上},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642425,
  author = {宮本 恭幸 and 米内義晴 and 金澤徹},
  title = {エヒ?タキシャル成長ソースによる InGaAs MOSFET の高電流密度化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642418,
  author = {宮本恭幸 and 米内義晴 and 金澤徹},
  title = {エピタキシャル成長ソースによるInGaAsMOSFETの高電流密度化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642426,
  author = {米内義晴 and 金澤徹 and 池田俊介 and 宮本恭幸},
  title = {InPエッチング異方性による微細InGaAsチャネルMOSFET},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642423,
  author = {宮本恭幸 and 米内義晴 and 金澤徹},
  title = {InGaAs MOSFETの高電流密度化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642417,
  author = {宮本恭幸 and 米内義晴 and 金澤徹},
  title = {InGaAs MOSFETの高電流密度化},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628832,
  author = {A. Kato and T. Kanazawa and S. Ikeda and Y. Yonai and YASUYUKI MIYAMOTO},
  title = {Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with A Back Source Electrode},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619804,
  author = {金澤 徹 and 寺尾 良輔 and 山口 裕太郎 and 池田 俊介 and 米内 義晴 and 加藤 淳 and 宮本 恭幸},
  title = {裏面電極を有するⅢ－Ⅴ族量子井戸型チャネルMOSFET},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100642379,
  author = {Yosiharu Yonai and Toru Kanazawa and Shunsuke Ikeda and YASUYUKI MIYAMOTO},
  title = {High Drain Current (>2A/mm) InGaAs channel MOSFET at VD=0.5V with Shrinkage of Channel Length by InP Anisotropic Etching},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100612623,
  author = {寺尾良輔 and 金澤徹 and 池田俊介 and 米内義晴 and 加藤淳 and 宮本恭幸},
  title = {Al2O3ゲート絶縁膜および再成長ソースを有するサブミクロンInP/InGaAs n-MOSFET},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100612624,
  author = {Toru Kanazawa and Ryousuke Terao and Yuutarou Yamaguchi and Shunsuke Ikeda and Yosiharu Yonai and YASUYUKI MIYAMOTO},
  title = {InP/InGaAs MOSFET with Back-Electrode Structure Bonded on Si Substrate Using a BCB Adhesive Layer},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100612622,
  author = {金澤徹 and 寺尾良輔 and 山口裕太郎 and 池田俊介 and 米内義晴 and 加藤淳 and 宮本恭幸},
  title = {Si基板上貼付された裏面電極付InP/InGaAs MOSFET},
  booktitle = {},
  year = 2010,
}