@inproceedings{CTT100830122, author = {Shunsuke Kubota and Rei Kayanuma and Akira Nakajima and Shin-ichi Nishizawa and Shin-ichi Nishizawa and Hiromichi Ohashi and Hitoshi Wakabayashi and Kazuo Tsutsui}, title = {P-Channel AlGaN/GaN MOSFETs for Normally-Off Operation}, booktitle = {}, year = 2015, } @inproceedings{CTT100830127, author = {A. Nakajima and S. Kubota and R. Kayanuma and K. Tsutsui and K. Kakushima and H. Wakabayashi and H. Iwai and S. Nishizawa and H. Ohashi}, title = {An overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform}, booktitle = {}, year = 2015, } @inproceedings{CTT100830125, author = {Akira Nakajima and Shin-Ichi Nishizawa and Hiromichi Ohashi and Rei Kayanuma and Kazuo Tsutsui and Shunsuke Kubota and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai}, title = {GaN-Based Monolithic Power Integrated Circuit Technology with Wide Operating Temperature on Polarization-Junction Platform}, booktitle = {}, year = 2015, } @inproceedings{CTT100673181, author = {Hiroaki Yonezawa and Rei Kayanuma and 中島 昭 and 西澤伸一 and 大橋弘通 and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and HIROSHI IWAI}, title = {AlGaN/GaN-based p-channel HFETs with wide-operating temperature}, booktitle = {}, year = 2014, } @inproceedings{CTT100674052, author = {米澤宏昭 and 萱沼怜 and 中島 昭 and 西澤伸一 and 大橋弘通 and 筒井一生 and 角嶋邦之 and 若林整 and 岩井洋}, title = {広い温度範囲で動作するAlGaN/GaN系Pチャネル型HFET}, booktitle = {}, year = 2014, } @inproceedings{CTT100673186, author = {Sin Man and Rei Kayanuma and Yusuke Takei and T. Takahashi and M. Shimizu and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and HIROSHI IWAI}, title = {A Study on the Fabrication of GaN-FinFET Using Selective Area Growth Method}, booktitle = {}, year = 2014, } @inproceedings{CTT100674049, author = {武井優典 and 岡本真里 and マンシン and 萱沼怜 and 神谷真行 and 齋藤渉 and 筒井一生 and 角嶋邦之 and 若林整 and 片岡好則 and 岩井洋}, title = {AlGaN/GaN系2次元電子ガスへのコンタクト特性における電極材料およびAlGaN膜厚依存性}, booktitle = {}, year = 2014, }