国際会議発表 (査読有り)

• A. Nakajima, S. Kubota, R. Kayanuma, K. Tsutsui, K. Kakushima, H. Wakabayashi, H. Iwai, S. Nishizawa, H. Ohashi. An overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform, 2015 IEEE Compound Semiconductor IC Symposium (CSICS2015), Oct. 2015.
• Akira Nakajima, Shin-Ichi Nishizawa, Hiromichi Ohashi, Rei Kayanuma, Kazuo Tsutsui, Shunsuke Kubota, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai. GaN-Based Monolithic Power Integrated Circuit Technology with Wide Operating Temperature on Polarization-Junction Platform, The 27th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD2015), May 2015.

国際会議発表 (査読なし・不明)

• Shunsuke Kubota, Rei Kayanuma, Akira Nakajima, Shin-ichi Nishizawa, Shin-ichi Nishizawa, Hiromichi Ohashi, Hitoshi Wakabayashi, Kazuo Tsutsui. P-Channel AlGaN/GaN MOSFETs for Normally-Off Operation, 2015 Material Research Society (MRS) Fall Meeting, Nov. 2015.
• Hiroaki Yonezawa, Rei Kayanuma, 中島 昭, 西澤伸一, 大橋弘通, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, HIROSHI IWAI. AlGaN/GaN-based p-channel HFETs with wide-operating temperature, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Sin Man, Rei Kayanuma, Yusuke Takei, T. Takahashi, M. Shimizu, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, Yoshinori Kataoka, HIROSHI IWAI. A Study on the Fabrication of GaN-FinFET Using Selective Area Growth Method, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.

国内会議発表 (査読なし・不明)

• 米澤宏昭, 萱沼怜, 中島 昭, 西澤伸一, 大橋弘通, 筒井一生, 角嶋邦之, 若林整, 岩井洋. 広い温度範囲で動作するAlGaN/GaN系Pチャネル型HFET, 第61回応用物理学会春季学術講演会, 2014.
• 武井優典, 岡本真里, マンシン, 萱沼怜, 神谷真行, 齋藤渉, 筒井一生, 角嶋邦之, 若林整, 片岡好則, 岩井洋. AlGaN/GaN系2次元電子ガスへのコンタクト特性における電極材料およびAlGaN膜厚依存性, 第61回応用物理学会春季学術講演会, 2014.

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