国内会議発表 (査読なし・不明)

• Han Hui-Seong, Takahiro Sano, Young uk Song, Shun-ichiro Ohmi. Electrical Properties of Hf/HfSiON/p-Si(100) Structure MIS capacitor by Using ECR-Sputtering, 春季第５７回応用物理学関係連合講演会, 春季第５７回応用物理学関係連合講演会予稿集, 応用物理学会, p. 13-105, Mar. 2010.

学位論文

• A study on ultrathin hafnium nitride gate insulator formed by ECR plasma sputtering,  Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2013/06/30,   
• A study on ultrathin hafnium nitride gate insulator formed by ECR plasma sputtering,  Exam Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2013/06/30,   
• A study on ultrathin hafnium nitride gate insulator formed by ECR plasma sputtering,  Thesis,  Doctor (Engineering),  Tokyo Institute of Technology,  2013/06/30,   

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