@article{CTT100598610,
  author = {T. Nagami and Y. Tsuchiya and K. Uchida and H. Mizuta and S. Oda},
  title = {Scaling Analysis of Nanoelectromechanical Memory Devices},
  journal = {Japanese Journal of Applied Physics},
  year = 2010,
}

@article{CTT100591383,
  author = {Tasuku Nagami and Yoshishige Tsuchiya and Shinichi Saito and Tadashi Arai and Toshikazu Shimada and hiroshi mizuta and SHUNRI ODA},
  title = {Electro-Mechanical Simulation of Switching Characteristics for Nanoelectromechanical},
  journal = {Japanese Journal of Applied Physics},
  year = 2009,
}

@article{CTT100542037,
  author = {Tasuku Nagami and hiroshi mizuta and N.Momo and Yoshishige Tsuchiya and S. Saito and T. Arai and T. Shimada and S. Oda},
  title = {Three-dimensional numerical analysis of switching properties of high-speed and non-volatile nanoelectromechanical memory},
  journal = {IEEE Trans. Electron Devices},
  year = 2007,
}

@inproceedings{CTT100601390,
  author = {T. Nagami and Y. Tsuchiya and K. Uchida and hiroshi mizuta and S. Oda},
  title = {Scaling Analysis of NEMS Memory Devices},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100600820,
  author = {H. Mizuta and M. A. G-. Ramirez and F. A. Hassani and M. A. Ghiass and Y. Tsuchiya and T. Nagami and B. Pruvost and J. Ogi and S. Sawai and S. Oda and M. Okamoto},
  title = {Multi-scale Simulation of Hybrid Silicon Nano-electromechanical (NEM) Information Devices},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100600811,
  author = {Hiroshi Mizuta and M. A. G.-Ramirez and Y. Tsuchiya and T. Nagami and S. Oda},
  title = {NEM – MOS Co-integration for Fast & Nonvolatile Memory Applications},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585527,
  author = {永見 佑 and 土屋良重 and 斎藤慎一 and 新井 唯 and 嶋田壽一 and 水田 博 and 内田 建 and 小田俊理},
  title = {pn接合部でのトラップを介したトンネリングを考慮したNEMSメモリの},
  booktitle = {},
  year = 2009,
}