論文

• T. Nagami, Y. Tsuchiya, K. Uchida, H. Mizuta, S. Oda. Scaling Analysis of Nanoelectromechanical Memory Devices, Japanese Journal of Applied Physics, Vol. 49, in press, 2010.
• Tasuku Nagami, Yoshishige Tsuchiya, Shinichi Saito, Tadashi Arai, Toshikazu Shimada, hiroshi mizuta, SHUNRI ODA. Electro-Mechanical Simulation of Switching Characteristics for Nanoelectromechanical, Japanese Journal of Applied Physics, 2009.
• Tasuku Nagami, hiroshi mizuta, N.Momo, Yoshishige Tsuchiya, S. Saito, T. Arai, T. Shimada, S. Oda. Three-dimensional numerical analysis of switching properties of high-speed and non-volatile nanoelectromechanical memory, IEEE Trans. Electron Devices, Vol. 54 (5), pp. 1132 - 1139, May 2007.

国際会議発表 (査読有り)

• T. Nagami, Y. Tsuchiya, K. Uchida, hiroshi mizuta, S. Oda. Scaling Analysis of NEMS Memory Devices, G-COE PICE International Symposium on Silicon Nano Devices in 2030, Oct. 2009.
• H. Mizuta, M. A. G-. Ramirez, F. A. Hassani, M. A. Ghiass, Y. Tsuchiya, T. Nagami, B. Pruvost, J. Ogi, S. Sawai, S. Oda, M. Okamoto. Multi-scale Simulation of Hybrid Silicon Nano-electromechanical (NEM) Information Devices, 8th International Conference on Global Research and Education – Inter-Academia, Sept. 2009.
• Hiroshi Mizuta, M. A. G.-Ramirez, Y. Tsuchiya, T. Nagami, S. Oda. NEM – MOS Co-integration for Fast & Nonvolatile Memory Applications, IEEE-NANO Satellite Workshop on Emerging Non-volatile Memory, July 2009.

国内会議発表 (査読なし・不明)

• 永見 佑, 土屋良重, 斎藤慎一, 新井 唯, 嶋田壽一, 水田 博, 内田 建, 小田俊理. pn接合部でのトラップを介したトンネリングを考慮したNEMSメモリの, 第56回応用物理学関係連合講演会, Apr. 2009.

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