@book{CTT100673613,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Takuo Tanaka and Shigehisa Arai},
  title = {Permeability Engineering of Semiconductor Photonic Devices},
  publisher = {Nova Science Publishers},
  year = 2015,
}

@article{CTT100800921,
  author = {Y. Miyamoto and T. Kanazawa and N. Kise and H. Kinoshita and K. Ohsawa},
  title = {Regrown Source/Drain in InGaAs Multi-Gate MOSFETs},
  journal = {J. Crystal Growth},
  year = 2019,
}

@article{CTT100800918,
  author = {W Zhang and T. Kanazawa and Y. Miyamoto},
  title = {Performance improvement of a p-MoS2/HfS2 van der Waals heterostructure tunnelling field-effect transistor by UV-O3 treatment},
  journal = {Apl. Phys. Exp},
  year = 2019,
}

@article{CTT100800892,
  author = {W Zhang and S. Netsu and T. Kanazawa and T. Amemiya and Y. Miyamoto},
  title = {Effect of increasing gate capacitance on the performance of a p-MoS2/HfS2 van der Waals heterostructure tunneling field-effect transistor},
  journal = {Jpn. J. Appl. Phys},
  year = 2019,
}

@article{CTT100766771,
  author = {Seiko Netsu and Toru Kanazawa and Teerayut Uwanno and Tomohiro Amemiya and Kosuke Nagashio and Yasuyuki Miyamoto},
  title = {Type-II HfS2/MoS2 Heterojunction Transistors},
  journal = {IEICE Transactions on Electronics},
  year = 2018,
}

@article{CTT100747594,
  author = {Tomohiro Amemiya and toru kanazawa and takuo hiratani and daisuke inoue and zhichen gu and satoshi yamasaki and tatsuhiro urakami and shigehisa arai},
  title = {Organic membrane photonic integrated circuits (OMPICs)},
  journal = {Optics Express},
  year = 2017,
}

@article{CTT100758305,
  author = {Tomohiro Amemiya and Toru Kanazawa and Satoshi Yamasaki and Shigehisa Arai},
  title = {Metamaterial Waveguide Devices for Integrated Optic},
  journal = {Materials},
  year = 2017,
}

@article{CTT100735623,
  author = {Toru Kanazawa and Tomohiro Amemiya and Vikrant Upadhyaya and Atsushi Ishikawa and Kenji Tsuruta and Takuo Tanaka and Yasuyuki Miyamoto},
  title = {Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO2},
  journal = {IEEE Transactions on Nanotechnology},
  year = 2017,
}

@article{CTT100741627,
  author = {Vikrant UPADHYAYA and Toru KANAZAWA and Yasuyuki MIYAMOTO},
  title = {Vacuum Annealing and Passivation of HfS2 FET for Mitigation of Atmospheric Degradation},
  journal = {IEICE Transactions on Electronics},
  year = 2017,
}

@article{CTT100735624,
  author = {雨宮 智宏 and 金澤 徹 and 平谷 拓生 and 荒井 滋久 and 浦上 達宣},
  title = {有機薄膜光集積回路},
  journal = {月刊OPTRONICS},
  year = 2017,
}

@article{CTT100722079,
  author = {雨宮 智宏 and 金澤 徹 and 平谷 拓生 and 西山 伸彦 and 荒井 滋久 and 浦上 達宣 and 田中 拓男 and 石川 篤},
  title = {光学迷彩とメタマテリアルフィルム},
  journal = {光技術コンタクト},
  year = 2016,
}

@article{CTT100722080,
  author = {金澤 徹 and 雨宮 智宏 and 宮本 恭幸},
  title = {二次元材料HfS2を用いたMOSトランジスタ},
  journal = {月刊機能材料},
  year = 2016,
}

@article{CTT100735791,
  author = {Nobukazu Kise and Haruki Kinoshita and Atsushi Yukimachi and Toru Kanazawa and Yasuyuki Miyamoto},
  title = {Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain},
  journal = {Solid-State Electronics},
  year = 2016,
}

@article{CTT100709139,
  author = {Tomohiro Amemiya and Masato Taki and Toru Kanazawa and Takuo Hiratani and Shigehisa Arai},
  title = {(Invited paper) Transformation Physics and Camouflage},
  journal = {IEICE Transactions on Electronics},
  year = 2016,
}

@article{CTT100709138,
  author = {Toru Kanazawa and Tomohiro Amemiya and Atsushi Ishikawa and Vikrant Upadhyaya and Kenji Tsuruta and Takuo Tanaka and Yasuyuki Miyamoto},
  title = {Few Layer HfS2 FET},
  journal = {Scientific Reports},
  year = 2016,
}

@article{CTT100693012,
  author = {R Yamanaka and T. Kanazawa and E. Yagyu and Y. Miyamoto},
  title = {Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique},
  journal = {Jpn. J. Appl.Phys.},
  year = 2015,
}

@article{CTT100682922,
  author = {Tomohiro Amemiya and Atsushi Ishikawa and Toru Kanazawa and JoonHyun Kang and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Takuo Tanaka and Shigehisa Arai},
  title = {Permeability-controlled Optical Modulator with Tri-gate Metamaterial: Control of Permeability on InP-based Photonic Integration Platform},
  journal = {Scientific Reports},
  year = 2015,
}

@article{CTT100682920,
  author = {Tomohiro Amemiya and Masato Taki and Toru Kanazawa and Takuo Hiratani and Shigehisa Arai},
  title = {Optical Lattice Model Towards Nonreciprocal Invisibility Cloaking},
  journal = {IEEE Journal Quantum Electronics},
  year = 2015,
}

@article{CTT100678925,
  author = {K. Ohsawa and A. Kato and T. Kanazawa and E. Uehara and Y. Miyamoto},
  title = {Channel thickness dependence on InGaAs MOSFET with InP source for high current density},
  journal = {IEICE Electronics Express},
  year = 2014,
}

@article{CTT100642251,
  author = {Atsushi Kato and Toru Kanazawa and Shunsuke Ikeda and Yosiharu Yonai and Yasuyuki Miyamoto},
  title = {Reduction of access resistance of InP/InGaAs composite-channel MOSFET with back source electrode},
  journal = {IEICE Trans. Electron.},
  year = 2012,
}

@article{CTT100628822,
  author = {R. Terao and T. Kanazawa and S. Ikeda and Y. Yonai and A. Kato and Y. Miyamoto},
  title = {InP/InGaAs Composite MOSFETs with Regrown Source and Al2O3 gate dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm},
  journal = {Applied Phys. Exp.},
  year = 2011,
}

@article{CTT100611953,
  author = {Toru Kanazawa and kazuya wakabayashi and Hisashi Saito and Ryousuke Terao and Shunsuke Ikeda and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Submicron InP/InGaAs Composite-Channel Metal–Oxide–Semiconductor Field-Effect Transistor with Selectively Regrown n+-Source},
  journal = {Applied Physics Express},
  year = 2010,
}

@article{CTT100672479,
  author = {T. Kanazawa and A. Morosawa and R. Fuji and T. Wada and M. Watanabe and M. Asada},
  title = {Suppression of Leakage Current of CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode Structures Grown on Si(100) Substrates by Nanoarea Local Epitaxy},
  journal = {Jpn. J. Appl. Phys.},
  year = 2007,
}

@article{CTT100672431,
  author = {T. Kanazawa and M. Watanabe and M. Asada},
  title = {Room temperature negative differential resistance of CdF<sub>2</sub>/CaF<sub>2</sub> double-barrier resonant tunneling diode structures grown on Si(100) substrates},
  journal = {Appl. Phys Lett.},
  year = 2007,
}

@inproceedings{CTT100822685,
  author = {M.Kitamura and T.Kanazawa and Y.Miyamoto},
  title = {Evaluation of fabricationmethod of InGaAs nanosheet},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800847,
  author = {張 文倫 and 金澤 徹 and 北村 稔 and 宮本 恭幸},
  title = {UV-O3表面酸化によるHfS2 MOSFETの性能改善},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800848,
  author = {北村 稔 and 金澤 徹 and 宮本 恭幸},
  title = {HSQを用いたInGaAsナノシート構造作製法評価},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800854,
  author = {張 文倫 and 祢津 誠晃 and 金澤 徹 and 雨宮 智宏 and 宮本 恭幸},
  title = {埋め込みNiバックゲートを用いたp-MoS2/HfS2トンネルFET},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800925,
  author = {W. Zhang and S. Netsu and T.Kanazawa and T. Amemiya and Y. Miyamoto},
  title = {p-MoS2/HfS2 van der Waals Heterostructure Transistor Using Ni Backgate Buried in HfO2 Dielectric},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800923,
  author = {Y.Miyamoto and T. Kanazawa and N. Kise and H. Kinoshita and Kazuto Ohsawa},
  title = {Regrown Source / Drain in InGaAs Multi-Gate MOSFET},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100768825,
  author = {Toru Kanazawa and Kazuto Ohsawa and Tomohiro Amemiya and Nobukazu Kise and Ryosuke Aonuma and Yasuyuki Miyamoto},
  title = {Fabrication of InGaAs Nanosheet Transistors with Regrown Source},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100759720,
  author = {Tomohiro Amemiya and Satoshi Yamasaki and Toru Kanazawa and Zhichen Gu and Daisuke Inoue and Atsushi Ishikawa and Nobuhiko Nishiyama and Takuo Tanaka and Tatsuhiro Urakami and Shigehisa Arai},
  title = {Infrared Invisibility Cloak Using Rolled Metamaterial Film},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100758296,
  author = {雨宮 智宏 and 山崎 理司 and 増田 佳祐 and 各務 響 and コシチン and 井上 大輔 and 金澤 徹 and 西山 伸彦 and 浦上 達宣 and 荒井 滋久},
  title = {メタマテリアルフィルムを用いたMWIR迷彩},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100759540,
  author = {金澤 徹 and 大澤 一斗 and 雨宮 智宏 and 木瀬 信和 and 青沼 遼介 and 宮本 恭幸},
  title = {InGaAsナノシートトランジスタの作製},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100758311,
  author = {雨宮 智宏 and 山崎 理司 and 増田 佳祐 and 各務 響 and コシチン and 井上 大輔 and 金澤 徹 and 西山 伸彦 and 浦上 達宣 and 荒井 滋久},
  title = {メタマテリアルフィルムを用いた光学遮蔽},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100757917,
  author = {Toru Kanazawa and Yasuyuki Miyamoto},
  title = {Development of Field-Effect Transistor  Using 2D Layered Hafnium Disulfide},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100747615,
  author = {⼤澤 ⼀⽃ and ⾦澤 徹 and ⽊瀬 信和 and ⾬宮 智宏 and 宮本 恭幸},
  title = {InGaAsナノシートチャネルを持つマルチゲートMOSFETに向けた作製プロセス開発},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100747614,
  author = {雨宮 智宏 and 山崎 理司 and 金澤 徹 and コシチン and 井上 大輔 and 石川 篤 and 西山 伸彦 and 田中 拓男 and 浦上 達宣 and 荒井 滋久},
  title = {メタマテリアルフィルムによる近赤外光学迷彩},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100747612,
  author = {祢津 誠晃 and ⾦澤 徹 and ⾬宮 智宏 and 宮本 恭幸},
  title = {HfS2/MoS2 ヘテロジャンクションの温度依存電流特性},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100747601,
  author = {Seiko Netsu and Toru Kanazawa and Vikrant Upadhyaya and Teerayut Uwanno and Tomohiro Amemiya and Kosuke Nagashio and Yasuyuki Miyamoto},
  title = {Type II HfS2/MoS2 heterojunction Tunnel FET},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100738414,
  author = {Tomohiro Amemiya and Toru Kanazawa and Takuo Hiratani and Daisuke Inoue and Zhichen Gu and Satoshi Yamasaki and Tatsuhiro Urakami and Shigehisa Arai},
  title = {Organic Membrane Photonic Waveguide with Metal Grating Couplers},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100735914,
  author = {祢津 誠晃 and 金澤 徹 and Vikrant Upadhyaya and ウワンノー ティーラユット and 雨宮 智宏 and 長汐 晃輔 and 宮本 恭幸},
  title = {Type II 型 HfS2/MoS2ヘテロジャンクションを有するTFET},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100735619,
  author = {雨宮 智宏 and 山﨑 理司 and 金澤 徹 and 平谷 拓生 and コ シチン and 石川 篤 and 西山 伸彦 and 田中 拓男 and 浦上 達宣 and 荒井 滋久},
  title = {メタマテリアルフィルムを用いた近赤外光学迷彩の理論解析},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100735618,
  author = {金澤 徹 and 雨宮 智宏 and 祢津 誠晃 and Vikrant Upadhyaya and 福田 浩一 and 宮本 恭幸},
  title = {HfS2系トンネルトランジスタのデバイスシミュレーション},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100735598,
  author = {雨宮 智宏 and 山﨑 理司 and 金澤 徹 and 石川 篤 and 西山 伸彦 and 宮本 恭幸 and 田中 拓男 and 荒井 滋久},
  title = {光回路とプラズモニックメタマテリアル},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100722098,
  author = {雨宮 智宏 and 山崎 理司 and 金澤 徹 and 平谷 拓生 and 鈴木 純一 and 西山 伸彦 and 荒井 滋久},
  title = {メタマテリアルを用いたSi 導波路型光バッファの提案},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100722100,
  author = {雨宮 智宏 and 金澤 徹 and 平谷 拓生 and 井上 大輔 and コ シチン and 浦上 達宣 and 荒井 滋久},
  title = {有機薄膜光集積回路：各素子の特性解析},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100722102,
  author = {金澤 徹 and Vikrant Upadhyaya and 雨宮 智宏 and 石川 篤 and 鶴田 健二 and 田中 拓男 and 宮本 恭幸},
  title = {HfO2パッシベーションによるHfS2 FETの特性改善},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100722083,
  author = {Toru Kanazawa and Tomohiro Amemiya and Vikrant Upadhyaya and Atsushi Ishikawa and Kenji Tsuruta and Takuo Tanaka and Yasuyuki Miyamoto},
  title = {Effect of the HfO2 passivation on HfS2 Transistors},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100725110,
  author = {Vikrant Upadhyaya and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {Vacuum annealing and passivation of Hf<sub>2</sub> FET for mitigation of atmospheric degradation},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100709160,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Tatsuhiro Urakami and Takuo Tanaka and Shigehisa Arai},
  title = {(Invited) Permeability Engineering in Optical Communication Devices},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100709159,
  author = {Tomohiro Amemiya and Toru Kanazawa and Tatsuhiro Urakami and Atsushi Ishikawa and Naoya Hojo and Akio Yasui and Nobuhiko Nishiyama and Takuo Tanaka and Shigehisa Arai},
  title = {Metafilm: Metamaterial Array Embedded in Organic Thin Film},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100725185,
  author = {Haruki Kinoshita and Nobukazu Kise and Atsushi Yukimachi and Toru Kanazawa and Yasuyuki Miyamoto},
  title = {Operation of 16-nm InGaAs channel multi-gate MOSFETs with regrown source/drain},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100725183,
  author = {Vikrant Upadhyaya and Toru Kanazawa and Yasuyuki Miyamoto},
  title = {Evaluation of electrical properties of HfS<sub>2</sub> thin flakes obtained by mechanical exfoliation},
  booktitle = {信学技報},
  year = 2016,
}

@inproceedings{CTT100709148,
  author = {雨宮 智宏 and 金澤 徹 and 平谷 拓生 and コ シチン and 北條 直也 and 浦上 達宣 and 荒井 滋久},
  title = {有機薄膜光集積回路},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100709158,
  author = {雨宮 智宏 and 金澤 徹 and 浦上 達宣 and 石川 篤 and 北條 直也 and 安井 章雄 and 西山 伸彦 and 田中 拓男 and 荒井 滋久},
  title = {Metafilm : メタマテリアルを内包した有機薄膜フィルム},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100725184,
  author = {木下 治紀 and 木瀬 信和 and 祢津 誠晃 and 金澤 徹 and 宮本 恭幸},
  title = {再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100740895,
  author = {木下 治紀 and 木瀬 信和 and 祢津 誠晃 and 金澤 徹 and 宮本 恭幸},
  title = {[22p-W541-5] 再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100725116,
  author = {Upadhyaya Vikrant and kanazawa Toru and Miyamoto Yasuyuki},
  title = {Measures for mitigating environmental degradation of Two Dimensional Hafnium Disulfide Field Effect Transistor},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100709157,
  author = {雨宮 智宏 and 金澤 徹 and 平谷 拓生 and コ シチン and 北條 直也 and 久能 雄輝 and 浦上 達宣 and 荒井 滋久},
  title = {有機薄膜光集積回路},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100800887,
  author = {木下 治紀 and 金澤 徹 and 祢津 誠晃 and 三嶋 裕一 and 宮本 恭幸},
  title = {再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセス},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721938,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and K. Ohsawa and Y. Mishima and M. Fujimatsu and K. Ohashi and S. Nestu and S. Iwata},
  title = {InGaAs channel for low supply voltage},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100709147,
  author = {Toru Kanazawa and Tomohiro Amemiya and Atsushi Ishikawa and Vikrant Upadhyaya and Takuo Tanaka and Kenji Tsuruta and Yasuyuki Miyamoto},
  title = {HfS2 Electric Double Layer Transistor with High Drain Current},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721910,
  author = {H.Kinoshita and S.Netsu and Y.mishima and T.Kanazawa and Y.Miyamoto},
  title = {Fabrication of InGaAs channel multi-gate MOSFETs with MOVPE regrown source/drain},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100716504,
  author = {S. Netsu and T. Kanazawa and Y. Miyamoto},
  title = {Improvement of Interface Property of HfO2/Al2O3/In0.53Ga0.47As Using Nitrogen Plasma Cleaning and Hydrogen Annealing},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100677904,
  author = {Tomohiro Amemiya and Atsushi Ishikawa and Toru Kanazawa and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Takuo Tanaka and Shigehisa Arai},
  title = {(Invited) Possibility of permeability control on InP-based photonic integration platform},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693222,
  author = {T. Kanazawa and T. Amemiya and A. Ishikawa and V. Upadhyaya and K. Tsuruta and T. Tanaka and Y. Miyamoto},
  title = {Fabrication of Thin-Film HfS2 FET},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100682919,
  author = {雨宮 智宏 and 石川 篤 and 金澤 徹 and 西山 伸彦 and 宮本 恭幸 and 田中 拓男 and 荒井 滋久},
  title = {光通信素子における透磁率制御の可能性},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693238,
  author = {木下 治紀 and 金澤 徹 and 祢津 誠晃 and 三嶋 裕一 and 宮本 恭幸},
  title = {再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセスに関する研究},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693239,
  author = {祢津 誠晃 and 金澤 徹 and 宮本 恭幸},
  title = {HfO2/Al2O3/In0.53Ga0.47As界 面に対する窒素プラズマクリーニング後の水素アニール効果に関する研究},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100682907,
  author = {金澤 徹 and 雨宮 智宏 and 石川 篤 and 鶴田 健二 and 田中 拓男 and 宮本 恭幸},
  title = {薄膜HfS2 FET},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100682905,
  author = {石川 篤 and 金澤 徹 and 雨宮 智宏 and 鶴田 健二 and 田中 拓男 and 宮本 恭幸},
  title = {機械的剥離法を用いたHfS2原子薄膜の作製と基礎物性の評価},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100679171,
  author = {R. Yamanaka and T. Kanazawa and E. Yagyu and Y. Miyamoto},
  title = {Normally-off AlGaN/GaN HEMT using Digital Etching Technique},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100693234,
  author = {山中僚大 and 金澤徹 and 柳生栄治 and 宮本恭幸},
  title = {デジタルエッチングを用いたGaN HEMTのノーマリーオフ化},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674604,
  author = {雨宮 智宏 and 金澤徹 and 石川 篤 and 姜 晙炫 and コ シチン and 西山 伸彦 and 宮本 恭幸 and 田中 拓男 and 荒井 滋久},
  title = {［依頼講演］透磁率制御メタマテリアルを装荷した光変調器},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100693229,
  author = {宮本恭幸 and 金澤 徹 and 米内義晴 and 加藤 淳 and 藤松基彦 and 柏野壮志 and 大澤一斗 and 大橋一水},
  title = {低電圧/高速動作にむけたInGaAs MOSFETソース構造},
  booktitle = {IEICE Technical Report},
  year = 2014,
}

@inproceedings{CTT100661087,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and JoonHyun Kang and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
  title = {(Invited) Meta-photonics for Advanced InP-based Photonic Integration},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679169,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and K. Ohsawa and Y. Mishima and T. Irisawa and M. Oda and T. Tezuka},
  title = {(Invited) Growth Process for High Performance of InGaAs MOSFETs},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679168,
  author = {Y. Mishima and T. Kanazawa and H. Kinoshita and E. Uehara and Y. Miyamoto},
  title = {InGaAs tri-gate MOSFETs with MOVPE regrown source/drain},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679167,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and A. Kato and M. Fujimatsu and M. Kashiwano and K. Ohsawa and K. Ohashi},
  title = {(Invited) InGaAs MOSFET Source Structures Toward High Speed/low Power Applications},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100664429,
  author = {Tomohiro Amemiya and Masato Taki and Toru Kanazawa and SHIGEHISA ARAI},
  title = {Asymmetric Invisibility Cloaking Theory Based on the Concept of Effective Electromagnetic Fields for Photons},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100665747,
  author = {雨宮 智宏 and 瀧 雅人 and 金澤 徹 and 荒井 滋久},
  title = {光子における有効電磁場を使った非対称光学迷彩},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679181,
  author = {三嶋裕一 and 金澤徹 and 木下治紀 and 上原英治 and 宮本恭幸},
  title = {再成長ソース/ドレインを有するInGaAsチャネルトライゲートMOSFET},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679178,
  author = {金澤徹 and 三嶋裕一 and 木下治紀 and 上原英治 and 宮本恭幸},
  title = {MOVPE再成長ソース/ドレインを有するInGaAsトライゲートMOSFET},
  booktitle = {IEICE technical report},
  year = 2014,
}

@inproceedings{CTT100679165,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and A. Kato and K. Ohsawa and M. Oda and T. Irisawa and T. Tezuka},
  title = {Heavily doped epitaxially grown source in InGaAs MOSFET for high drain current density},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664543,
  author = {雨宮智宏 and 金澤 徹 and 石川 篤 and カン ジュンヒョン and 西山伸彦 and 宮本恭幸 and 田中拓男 and 荒井滋久},
  title = {メタマテリアルを用いたInP系プラットフォームにおける透磁率制御},
  booktitle = {IEICE Technical Report},
  year = 2013,
}

@inproceedings{CTT100654650,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Seiji Myoga and JoonHyun Kang and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
  title = {(Invited) Photonic metamaterials in semiconductor optical devices},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100678939,
  author = {K. Ohsawa and A. Kato and T. Sagai and T. Kanazawa and E. Uehara and Y. Miyamoto},
  title = {Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100679172,
  author = {大澤一斗 and 加藤淳 and 佐賀井健 and 金澤徹 and 上原英治 and 宮本恭幸},
  title = {高電流密度化に向けたInPソースを有するIII-V-OI InGaAs MOSFETのチャネル厚依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100679176,
  author = {宮本恭幸 and 金澤徹},
  title = {InGaAs MOSFETの現状と将来展望},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100653652,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Seiji Myoga and Eijun Murai and Takahiko Shindo and J. Kang and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Takuo Tanaka and Shigehisa Arai},
  title = {Electrically-driven Permeability-controlled Optical Modulator using Mach-Zehnder Interferometer with Metamaterial},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659719,
  author = {A. Kato and T. Kanazawa and Eiji Uehara and Y. Yonai and Y. Miyamoto},
  title = {Sub-50-nm InGaAs MOSFET with n-InP source on Si substrate},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100648390,
  author = {雨宮智宏 and 金澤徹 and 石川篤 and 明賀聖慈 and 村井英淳 and 進藤隆彦 and 姜晙炫 and 西山伸彦 and 宮本恭幸 and 田中拓男 and 荒井滋久},
  title = {微細金属構造をもつ導波路型光デバイスにおける相互作用距離の解析},
  booktitle = {第60回応用物理学関係連合講演会},
  year = 2013,
}

@inproceedings{CTT100659775,
  author = {加藤淳 and 米内義晴 and 金澤徹 and 宮本恭幸},
  title = {Si 基板上 InGaAs-MOSFET の微細化に関する研究},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100645875,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Seiji Myoga and Eijun Murai and Takahiko Shindo and J. Kang and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Takuo Tanaka and Shigehisa Arai},
  title = {Permeability-controlled Optical Modulator with Tri-gate Metamaterial},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659769,
  author = {宮本恭幸 and 金澤徹},
  title = {MOSFET低電圧化の為のInGaAs チャネル},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100639796,
  author = {雨宮智宏 and 金澤徹 and 石川篤 and 明賀聖慈 and 村井英淳 and 進藤隆彦 and 姜晙炫 and 西山伸彦 and 宮本恭幸 and 田中拓男 and 荒井滋久},
  title = {透磁率の制御によるInP 系導波路型光変調器},
  booktitle = {第73回秋季応用物理学会学術講演会},
  year = 2012,
}

@inproceedings{CTT100659767,
  author = {加藤淳 and 米内義晴 and 金澤徹 and 宮本恭幸},
  title = {Si 基板上 InGaAs-MOSFET の微細化に関する研究},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642426,
  author = {米内義晴 and 金澤徹 and 池田俊介 and 宮本恭幸},
  title = {InPエッチング異方性による微細InGaAsチャネルMOSFET},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642425,
  author = {宮本 恭幸 and 米内義晴 and 金澤徹},
  title = {エヒ?タキシャル成長ソースによる InGaAs MOSFET の高電流密度化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642418,
  author = {宮本恭幸 and 米内義晴 and 金澤徹},
  title = {エピタキシャル成長ソースによるInGaAsMOSFETの高電流密度化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642423,
  author = {宮本恭幸 and 米内義晴 and 金澤徹},
  title = {InGaAs MOSFETの高電流密度化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642417,
  author = {宮本恭幸 and 米内義晴 and 金澤徹},
  title = {InGaAs MOSFETの高電流密度化},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100642377,
  author = {YASUYUKI MIYAMOTO and Hisashi Saito and Toru Kanazawa},
  title = {High-current-density InP ultrafine devices for high-speed operation},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628829,
  author = {T. Kanazawa and R. Terao and S. Ikeda and Y. Miyamoto},
  title = {MOVPE-regrown source/drain regions for III-V MOSFETs with high drain current of 1.28 A/mm},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100642421,
  author = {加藤淳 and 金澤徹 and 宮本恭幸},
  title = {ソース裏面電極によるInP/InGaAsコンポジットチャネルMOSFETのアクセス抵抗低減},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100642420,
  author = {池田俊介 and 金澤徹 and 宮本恭幸},
  title = {電子ランチャを持つInGaAs MOSFETにおけるヘテロ障壁高さ依存性},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100642419,
  author = {宮本恭幸 and 金澤徹},
  title = {InP系化合物半導体を用いたMOSFETの技術動向},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628832,
  author = {A. Kato and T. Kanazawa and S. Ikeda and Y. Yonai and YASUYUKI MIYAMOTO},
  title = {Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with A Back Source Electrode},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619804,
  author = {金澤 徹 and 寺尾 良輔 and 山口 裕太郎 and 池田 俊介 and 米内 義晴 and 加藤 淳 and 宮本 恭幸},
  title = {裏面電極を有するⅢ－Ⅴ族量子井戸型チャネルMOSFET},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100642379,
  author = {Yosiharu Yonai and Toru Kanazawa and Shunsuke Ikeda and YASUYUKI MIYAMOTO},
  title = {High Drain Current (>2A/mm) InGaAs channel MOSFET at VD=0.5V with Shrinkage of Channel Length by InP Anisotropic Etching},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619797,
  author = {Y. Miyamoto and H. Saito and T. Kanazawa},
  title = {Submicron-channel InGaAs MISFET with epitaxially grown source},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100612623,
  author = {寺尾良輔 and 金澤徹 and 池田俊介 and 米内義晴 and 加藤淳 and 宮本恭幸},
  title = {Al2O3ゲート絶縁膜および再成長ソースを有するサブミクロンInP/InGaAs n-MOSFET},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100612622,
  author = {金澤徹 and 寺尾良輔 and 山口裕太郎 and 池田俊介 and 米内義晴 and 加藤淳 and 宮本恭幸},
  title = {Si基板上貼付された裏面電極付InP/InGaAs MOSFET},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100612624,
  author = {Toru Kanazawa and Ryousuke Terao and Yuutarou Yamaguchi and Shunsuke Ikeda and Yosiharu Yonai and YASUYUKI MIYAMOTO},
  title = {InP/InGaAs MOSFET with Back-Electrode Structure Bonded on Si Substrate Using a BCB Adhesive Layer},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610518,
  author = {T. Kanazawa and K. Wakabayashi and H. Saito and R. Terao and T. Tajima and S. Ikeda and Y. Miyamoto and K. Furuya},
  title = {Submicron InP/InGaAs composite channel MOSFETs with selectively regrown n+-source/drain buried in channel undercut},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610522,
  author = {Y. Miyamoto and T. Kanazawa and H. Saito},
  title = {InGaAs MISFET with epitaxially grown source},
  booktitle = {InGaAs MISFET with epitaxially grown source},
  year = 2010,
}

@inproceedings{CTT100610493,
  author = {若林和也 and 金澤 徹 and 齋藤尚史 and 寺尾良輔 and 池田俊介 and 宮本恭幸 and 古屋一仁},
  title = {再成長ソースを有するサブミクロンInP/InGaAs nMOSFETの電流電圧特性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610505,
  author = {金澤 徹 and 若林和也 and 齋藤尚史 and 寺尾良輔 and 田島智宣 and 池田俊介 and 宮本恭幸 and 古屋一仁},
  title = {III-V族サブミクロンチャネルを有する高移動度MOSFET},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610494,
  author = {寺尾良輔 and 金澤 徹 and 齋藤尚史 and 若林和也 and 池田俊介 and 宮本恭幸 and 古屋一仁},
  title = {Al2O3ゲート絶縁膜を用いたInP/InGaAsチャネル n-MOSFETの電気特},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100597640,
  author = {金澤徹 and 若林和也 and 齋藤尚史 and 寺尾良輔 and 田島智宣 and 池田俊介 and 宮本恭幸 and 古屋一仁},
  title = {Al2O3ゲート絶縁膜を用いたInP/InGaAsコンポジットチャネルMOSFET},
  booktitle = {電子情報通信学会技術研究報告 電子デバイス},
  year = 2010,
}

@inproceedings{CTT100591555,
  author = {Toru Kanazawa and Hisashi Saito and Kazuya Wakabayashi and Ryousuke Terao and Tomonori Tajima and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N<sup>+</sup>-InGaAs Source Region},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100610500,
  author = {K. Wakabayashi and T. Kanazawa and H. Saito and R. Terao and S. Ikeda and Y. Miyamoto and K. Furuya},
  title = {InP/In0.53Ga0.47As composite channel n-MOSFETwith heavily dopedregrown source/drain structure},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100591554,
  author = {若林 和也 and 金澤 徹 and 齋藤 尚史 and 田島 智宣 and 寺尾 良輔 and 宮本 恭幸 and 古屋 一仁},
  title = {再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100591551,
  author = {金澤徹 and 齋藤尚史 and 若林和也 and 田島智宣 and 宮本恭幸 and 古屋一仁},
  title = {MOVPE再成長n<sup>+</sup>ソースを有するⅢ-Ⅴ族高移動度チャネルMOSFET},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100610491,
  author = {若林和也 and 金澤 徹 and 齋藤尚史 and 田島智宣 and 寺尾良輔 and 宮本恭幸 and 古屋一仁},
  title = {「再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100598415,
  author = {YASUYUKI MIYAMOTO and Toru Kanazawa and Hisashi Saito and KAZUHITO FURUYA},
  title = {InGaAs/InP MISFET with epitaxially grown source},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100583670,
  author = {Toru Kanazawa and KAZUHITO FURUYA and YASUYUKI MIYAMOTO and Hisashi Saito and kazuya wakabayashi and Tomonori Tajima},
  title = {InP/InGaAs-channel MOSFET with MOVPE Selective Regrown Source},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100576791,
  author = {齋藤尚史 and 金澤徹 and 宮本恭幸 and 古屋一仁},
  title = {ヘ テロランチャと真性チャネルを有する縦型InGaAs-MOSFETの作製},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100583674,
  author = {金澤徹 and 古屋一仁 and 宮本恭幸 and 齋藤尚史 and 若林和也 and 田島智宣},
  title = {MOVPE再成長ソースを有するIII-V族MOSFETの電流特性},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100576984,
  author = {宮本恭幸 and 金澤徹},
  title = {III-V ナノデバイス},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100565410,
  author = {T. Kanazawa and H. Saito and K. Wakabayashi and Y. Miyamoto and K. Furuya},
  title = {Lateral Buried Growth of N+-InGaAs Source/Drain Region to Undercut InGaAs Channel Structure for High Drive Current N-type MOSFET},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100583676,
  author = {金澤徹 and 古屋一仁 and 宮本恭幸 and 齋藤尚史 and 若林和也 and 田島智宣},
  title = {Ⅲ-Ⅴ族高駆動能力MOSFETへ向けたn<sup>+</sup>-InGaAsソース/ドレイン層の横方向埋め込み成長},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100669864,
  author = {M. Watanabe and T. Kanazawa and M. Asada},
  title = {Transmission Electron Microscopy Analysis of CaF<sub>2</sub>/CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode Structures grown on Si(100) Substrate},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100669862,
  author = {T. Kanazawa and R. Fujii and T. Wada and Y. Suzuki and M. Watanabe and M. Asada},
  title = {Control of NDR Characteristics of CdF<sub>2</sub>/CaF<sub>2</sub> RTDs Using Nano-Area Local Growth on Si(100) Substrates},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100667986,
  author = {金澤 徹 and 藤井 諒 and 和田 宇史 and 鈴木 雄介 and 渡辺 正裕 and 浅田 雅洋},
  title = {Si (100)基板上CdF<sub>2</sub>/CaF<sub>2</sub>ナノ領域成長共鳴トンネルダイオードのI-V特性制御},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100669838,
  author = {T. Kanazawa and A. Morosawa and M. Watanabe and M. Asada},
  title = {High peak-to-valley current ratio of CdF<sub>2</sub>/CaF<sub>2</sub> resonant tunneling diode grown on Si(100) substrates},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100667975,
  author = {渡辺正裕 and 金澤徹 and 浅田雅弘},
  title = {Si(100)基板上CdF<sub>2</sub>/CaF<sub>2</sub>共鳴トンネルダイオード構造の成長温度依存性},
  booktitle = {},
  year = 2004,
}

@inproceedings{CTT100669799,
  author = {M. Watanabe and T. Kanazawa and K. Jinen and M. Asada},
  title = {Negative Differential Resistance of CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode Grown on Si(100) Substrate},
  booktitle = {2004 Silicon Nanoelectronics Workshop,9-20},
  year = 2004,
}

@inproceedings{CTT100667965,
  author = {金澤 徹 and 松田 克己 and 渡辺 正裕 and 浅田 雅洋},
  title = {Si (100)基板上CdF<sub>2</sub>/CaF<sub>2</sub> 共鳴トンネルダイオードの微分負性抵抗特性の構造依存性},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100669705,
  author = {M. Watanabe and M. Matsuda and H. Fujioka and T. Kanazawa and M. Asada},
  title = {Memory Effect of CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode grown on p-type Silicon Substrate},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100669704,
  author = {M. Watanabe and M. Matsuda and H. Fujioka and T. Kanazawa and M. Asada},
  title = {Structure Dependence of Negative Differential Resistance Characteristics of CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode grown by Local Epitaxy on Silicon},
  booktitle = {2003 Silicon Nanoelectronics Workshop, 8-07},
  year = 2003,
}

@inproceedings{CTT100667961,
  author = {金澤徹 and 松田克己 and 渡辺正裕 and 浅田雅洋},
  title = {ダブルステップ化Si(100) 2°off基板上CdF<sub>2</sub>/CaF<sub>2</sub> 共鳴トンネルダイオードの作製と評価},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100667959,
  author = {松田克己 and 金澤徹 and 渡辺正裕 and 浅田雅洋},
  title = {CdF<sub>2</sub>/CaF<sub>2</sub> 共鳴トンネルダイオードの電荷蓄積による特性変化},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100669701,
  author = {M. Watanabe and T. Ishikawa and M. Matsuda and T. Kanazawa and M. Asada},
  title = {Systematic variation of negative differential resistance characteristics of CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode on Si(111) grown by Nanoarea Local Epitaxy},
  booktitle = {The Second International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics '02 (QNN '02), Tu4-3},
  year = 2002,
}

@inproceedings{CTT100669700,
  author = {M. Watanabe and T. Ishikawa and M. Matsuda and T. Kanazawa and M. Asada},
  title = {Room Temperature Negative Differential Resistance of CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode grown on Si using Nanoarea Local Epitaxy},
  booktitle = {26th International Conference on the Physics of Semiconductors, P157},
  year = 2002,
}

@inproceedings{CTT100667914,
  author = {金澤徹 and 松田克己 and 石川達也 and 金澤徹 and 渡辺正裕 and 浅田雅洋},
  title = {Si(100)基板上CdF<sub>2</sub>/CaF<sub>2</sub>共鳴トンネルダイオードの作製と評価},
  booktitle = {},
  year = 2002,
}

@misc{CTT100672513,
  author = {金澤 徹 and 諸澤篤史 and 藤井 諒 and 和田宇史 and 渡辺正裕 and 浅田雅洋},
  title = {ナノ領域成長を用いたSi(100)基板上弗化物系共鳴トンネルダイオード},
  year = 2006,
}

@misc{CTT100596206,
  author = {Toru Kanazawa},
  title = {Si(100)基板上CaF2/CdF2ヘテロ構造を用いた共鳴トンネル集積デバイスの基礎研究},
  year = 2007,
}

@misc{CTT100808492,
  author = {雨宮智宏 and 金澤徹 and 荒井滋久},
  title = {有機薄膜光集積回路},
  howpublished = {登録特許},
  year = 2021,
  month  = {},
  note   = {特願2017-564161(2017/01/13), 再表2017/130744(2018/11/22), 特許第6817634号(2021/01/04)}
}


@misc{CTT100770013,
  author = {雨宮智宏 and 庄司雄哉 and 荒井滋久 and 金澤徹 and 西山伸彦 and 水本哲弥},
  title = {光バッファ素子構造、その製造方法、およびその解析方法},
  howpublished = {公開特許},
  year = 2018,
  month  = {},
  note   = {特願2016-164148(2016/08/24), 特開2018-031896(2018/03/01)}
}


@misc{CTT100710319,
  author = {宮本恭幸 and 山中僚大 and 金澤徹 and 今井　章文 and 柳生　栄治},
  title = {半導体装置の製造方法
},
  howpublished = {公開特許},
  year = 2016,
  month  = {},
  note   = {特願2014-174229(2014/08/28), 特開2016-051722(2016/04/11)}
}


@misc{CTT100677655,
  author = {宮本恭幸 and 柏野壮志 and 金澤徹},
  title = {電界効果トランジスタ},
  howpublished = {公開特許},
  year = 2014,
  month  = {},
  note   = {特願2013-001907(2013/01/09), 特開2014-135359(2014/07/24)}
}


@misc{CTT100657647,
  author = {宮本恭幸 and 米内　義晴 and 金澤徹},
  title = {電界効果トランジスタ},
  howpublished = {公開特許},
  year = 2013,
  month  = {},
  note   = {特願2011-165385(2011/07/28), 特開2013-030604(2013/02/07)}
}




@phdthesis{CTT100596206,
  author = {Toru Kanazawa},
  title = {Si(100)基板上CaF2/CdF2ヘテロ構造を用いた共鳴トンネル集積デバイスの基礎研究},
  school = {東京工業大学},
  year = 2007,
}