@book{CTT100564738,
  author = {青柳克信 and 南不二雄 and 吉野淳二 and 梶川浩太郎},
  title = {先端材料光物性},
  publisher = {コロナ社},
  year = 2008,
}

@book{CTT100527852,
  author = {梶川武信 and 西田勲夫 and 木村靖忠 and 篠原嘉一 and 松原覚衛 and 山田作太郎 and 山梨正孝 and 吉野 淳二 and 吉原一紘},
  title = {熱電変換},
  publisher = {裳華房},
  year = 2005,
}

@article{CTT100868451,
  author = {加来滋 and 樋渡 功太 and 吉野淳二},
  title = {Scanning tunneling microscopy of strained-α-Sn(0 0 1) surface grown on InSb(0 0 1) substrate},
  journal = {},
  year = 2022,
}

@article{CTT100847925,
  author = {Shigeru Kaku and Tatsuhito Ando and Junji YOSHINO},
  title = {Real Space Imaging of Topological Edge States in InAs/GaSb and InAs/InxGa1–xSb Quantum Wells},
  journal = {ACS Nano},
  year = 2019,
}

@article{CTT100724393,
  author = {Daiki Nozaki and Shigeru Kaku and Junji Yoshino},
  title = {Magnetic Anisotropy Constants and Anisotropic Magneto-Resistances in GaMnAs Depending on Layer Thickness},
  journal = {JPS Conf. Proc.},
  year = 2014,
}

@article{CTT100724395,
  author = {Shigeru Kaku and Jun Nakamura and Kazuma Yagyua and Junji Yoshino},
  title = {Origin of symmetric STM images for the asymmetric atomic configuration on GaAs(001)–c(4 × 4)α surfaces},
  journal = {Surface Science},
  year = 2014,
}

@article{CTT100724398,
  author = {Masahiro Hiraoka and Shigeru Kaku and Junji Yoshino},
  title = {STM observation of MnAs initial growth surface on GaAs(001)-c(4×4) α and (6×6) reconstructions},
  journal = {Journal of Crystal Growth},
  year = 2013,
}

@article{CTT100724397,
  author = {Kazuma Yagyu and Shigeru Kaku and Junji Yoshino},
  title = {Symmetric–asymmetric transformation of an image on GaAs(001)-c(4 × 4)α surface using scanning tunneling microscopy},
  journal = {J. Vac. Sci. Technol. A},
  year = 2012,
}

@article{CTT100791076,
  author = {Yagyu, K. and Komamiya, D. and Junji YOSHINO},
  title = {Initial adsorption of Cr atoms on GaAs(0 0 1)},
  journal = {Physica E: Low-Dimensional Systems and Nanostructures},
  year = 2011,
}

@article{CTT100790915,
  author = {Miyake, Y. and Nishida, N. and Junji YOSHINO and Higemoto, W. and Torikai, E. and Shimomura, K. and Ikedo, Y. and Kawamura, N. and Strasser, P. and Makimura, S. and Fujimori, H. and Nakahara, K. and Koda, A. and Kobayashi, Y. and Nishiyama, K. and Kadono, R. and Ogitsu, T. and Makida, Y. and Sasaki, K. and Adachi, T. and Nagamine, K.},
  title = {Ultra slow muon microscopy for nano-science},
  journal = {Journal of Physics: Conference Series},
  year = 2011,
}

@article{CTT100551056,
  author = {Jun Okabayashi and Junji YOSHINO},
  title = {Current-driven magnetization reversal at extremely low threshold current density in (Ga,Mn)As-based double-barrier magnetic tunnel junctions},
  journal = {Appl. Phys. Lett.},
  year = 2008,
}

@article{CTT100551055,
  author = {Jun Okabayashi and Junji YOSHINO},
  title = {Temperature and bias voltage dependences of tunneling magnetoresistance in (Ga,Mn)As-based double-barrier magnetic tunnel junctions},
  journal = {J. Appl. Phys.},
  year = 2008,
}

@article{CTT100551050,
  author = {M. Watanabe and H. Toyao and Jun Okabayashi and T. Yamaguchi and Junji YOSHINO},
  title = {Layer-thickness dependence in tunneling magnetoresistance and current-driven magnetization reversal using GaMnAs-based double-barrier structures},
  journal = {Physica E},
  year = 2007,
}

@article{CTT100551051,
  author = {T. Arai and M. Suzuki and Y. Ueno and Jun Okabayashi and Junji YOSHINO},
  title = {Initial growth of MnAs on GaAs(0 0 1)-c(4×4) reconstructed surface},
  journal = {Physica E},
  year = 2007,
}

@article{CTT100551052,
  author = {Jun Okabayashi and M. Watanabe and H. Toyao and T. Yamaguchi and Junji YOSHINO},
  title = {Pulse-Width Dependence in Current-Driven Magnetization Reversal Using GaMnAs-Based Double-Barrier Magnetic Tunnel Junction},
  journal = {J. Supercond. Nov. Magn.},
  year = 2007,
}

@article{CTT100551049,
  author = {T. Arai and M. Suzuki and Y. Ueno and Jun Okabayashi and Junji YOSHINO},
  title = {Structure transition between two GaAs(0 0 1)-c(4×4) surface reconstructions in As4 flux},
  journal = {Journal of Crystal Growth},
  year = 2007,
}

@article{CTT100529389,
  author = {M. Watanabe and H. Toyao and J. Okabayashi and J. Yoshino},
  title = {Characteristics of GaMnAs-based double barrier TMR structures},
  journal = {phys. stat. sol. (c)},
  year = 2006,
}

@article{CTT100504947,
  author = {H. Toyao and Y. Tanikawa and A. Suzuki and J. Yoshino},
  title = {Tunneling spectroscopy of GaMnAs-based magnetic tunneling junction},
  journal = {Extended abstracts of the 10th symposium on the physics and application of spin-related phenomena in semiconductors (PASPS10), Yokohama, June, 2004},
  year = 2004,
}

@article{CTT100504945,
  author = {AYATO NAGASHIMA and Junji YOSHINO},
  title = {Surface structure of GaAs(001)-c(4x4) studied by LEED intensity analysis},
  journal = {Surface Science},
  year = 2004,
}

@article{CTT100547026,
  author = {A. Nagashima and T. Kawakami and A. Nishimura and J. Yoshin},
  title = {Anomalous roughening of GaAs(001) during low temperature growth},
  journal = {Extended abstracts of 22nd electric materials symposium},
  year = 2003,
}

@article{CTT100487684,
  author = {A. Nagashima and A. Nishimura and J. Yoshino},
  title = {Study on initial growth process of MnAs on GaAs(001)C(4x4) by LEED IV and STM},
  journal = {Extended abstracts of The 9th symposium on the physics and application of spin-related phenomena in semiconductors(PASPS9)},
  year = 2003,
}

@article{CTT100470396,
  author = {A. Nagashima and M. Tazima and A. Nishimura and Y. Takagi and J. Yoshino},
  title = {STM and RHEED studies on low-temperature growth of GaAs(001)},
  journal = {Surface Science},
  year = 2002,
}

@article{CTT100470399,
  author = {A. Nagashima and T. Kawakami and J. Yoshino},
  title = {Origin of reentrant RHEED intensity oscillation observed during MBE growth of GaAs},
  journal = {Extended abstract of 21st Electronic Materials Symposium, Izu-Nagaoka},
  year = 2002,
}

@article{CTT100470395,
  author = {Y. Takagi and A. Nishimura and A. Nagashima and J. Yoshino},
  title = {Formation of iron silicide nanodots on Si(111)-Ag},
  journal = {Surface Science},
  year = 2002,
}

@article{CTT100453725,
  author = {M. Tazima and K. Yamamoto and D. Okazawa and A. Nagashima and J. Yoshino},
  title = {Effect of Mn on the low temperature growth of GaAs and GaMnAs},
  journal = {Physica E},
  year = 2001,
}

@article{CTT100453724,
  author = {Y. Satoh and D. Okazawa and A. Nagashima and J. Yoshino},
  title = {Carrier concentration dependence of electronic and magnetic properties of Sn-doped GaMnAs},
  journal = {Physica E},
  year = 2001,
}

@article{CTT100453723,
  author = {D. Okazawa and K. Yamamoto and A. Nagashima and J. Yoshino},
  title = {MBE growth and properties of 3d transition metal-doped GaAs},
  journal = {Physica E},
  year = 2001,
}

@article{CTT100453722,
  author = {M. Tajima and A. Nagashima and J. Yoshino},
  title = {STM study on re-entrant behaviors observed dduring MBE growth of GaAs},
  journal = {13th International conference on crystal growth, Abstracts, 03a-K31-11},
  year = 2001,
}

@article{CTT100453721,
  author = {T. Honda and K. Hara and J. Yoshino and H. Kukimoto},
  title = {CuGaS_2-based light emitting diode grown by MOVPE},
  journal = {13th International conference on crystal growth, Abstracts, 03a-K31-11},
  year = 2001,
}

@article{CTT100453720,
  author = {M. Tajima and A. Nagashima and J. Yoshino},
  title = {STM studies on reentrant RHEED oscillation observed during low temperature MBE growth of GaAs},
  journal = {20th Electronic materials symposium , Extended abstracts},
  year = 2001,
}

@article{CTT100453719,
  author = {K. Yamamoto and A. Nagashima and J. Yoshino},
  title = {MBE growth of (Ga,Mn)As with high Mn-content},
  journal = {20th Electronic materials symposium , Extended abstracts},
  year = 2001,
}

@article{CTT100453718,
  author = {A. Nagashima and M. Tajima and J. Yoshino},
  title = {Study on mechanism of re-entrant RHEED oscillation observed during LT-MBE growth of GaAs},
  journal = {28th International symposium on compound semiconductors, MoP22, Abstracts},
  year = 2001,
}

@article{CTT100470397,
  author = {J. Yoshino},
  title = {III-V based diluted magnetic semiconductors -Promising properties and future prospects-},
  journal = {Japanese research review for pioneering “Ternaly and multinary compounds in the 21 century”, IPAP book 1},
  year = 2001,
}

@article{CTT100470398,
  author = {T. Honda and K. Hara and J. Yoshino and H. Kukimoto},
  title = {Growth of CuGaS<sub>2</sub> based chalcopyrite compounds and their heterostructure by MOVPE},
  journal = {Japanese research review for pioneering “Ternaly and multinary compounds in the 21 century”, IPAP book 1},
  year = 2001,
}

@article{CTT100453717,
  author = {AYATO NAGASHIMA and J. Yoshino},
  title = {Structural analysis of GaAs(001)-c(4x4) with LEED IV  technique},
  journal = {Surface Science},
  year = 2001,
}

@article{CTT100440325,
  author = {A. Nagashima and M. Tajima and J. Yoshino},
  title = {Surface structure analysis of GaAs (100)-c(4x4) by LEED IV technique},
  journal = {Records of 19th Electronic Materials Symposium, Izu-Nagaoka},
  year = 2000,
}

@article{CTT100440323,
  author = {D. Okazawa and K. Yamamoto and A.　Nagashima and J. Yoshino},
  title = {MBE growth and properties of Cr, Fe, and Co-doped GaAs},
  journal = {Abstract of The international conference on the Physics and Application of Spin-related Phenomena in Semiconductors, Sendai},
  year = 2000,
}

@article{CTT100440322,
  author = {Y. Satoh and D. Okazawa and A. Nagashima and J. Yoshino},
  title = {Carrier concentration dependence of electronic and magnetic properties of Sn-doped GaMnAs},
  journal = {Abstract of The international conference on the Physics and Application of Spin-related Phenomena in Semiconductors, Sendai},
  year = 2000,
}

@article{CTT100440348,
  author = {M. Tajima and K. Yamamoto and D. Okazawa and A. Nagashima and J. Yoshino},
  title = {STM study on low temperature MBE grown GaAs and GaMnAs surfaces},
  journal = {Records of 19th Electronic Materials Symposium, Izu-Nagaoka},
  year = 2000,
}

@article{CTT100440324,
  author = {M. Tajima and K. Yamamoto and D. Okazawa and A. Nagashima and J. Yoshino},
  title = {Effect of Mn on the low temperature growth of GaAs and GaMnAs},
  journal = {Abstract of The international conference on the Physics and Application of Spin-related Phenomena in Semiconductors, Sendai},
  year = 2000,
}

@article{CTT100440302,
  author = {A. Nagashima and T. Kimura and A. Nishimura and J. Yoshino},
  title = {Initial nitrization of the CoSi<sub>2</sub>(111)/Si(111) surface},
  journal = {Surface Science},
  year = 1999,
}

@article{CTT100440326,
  author = {J. Yoshino and M. Odahara and D. Okazawa and A. Nagashima},
  title = {Magneto-transport properties of Sn-doped p-type (Ga,Mn)As},
  journal = {Records of 17th Electronic Materials Symposium, Kii-Shirahama},
  year = 1999,
}

@article{CTT100440303,
  author = {A. Nagashima and T. Kimura and A. Nishimura and J. Yoshino},
  title = {Comparative studies on the surface structures of NiSi<sub>2</sub> and epitaxially formed on Si (111)},
  journal = {Surface Science},
  year = 1999,
}

@article{CTT100420995,
  author = {A. Nagashima and T. Kimura and J. Yoshino},
  title = {Formation of an ordered surface compound consisting of Ag, Si, and H on Si(001)},
  journal = {Applied Surface Science},
  year = 1998,
}

@article{CTT100440328,
  author = {J. Yoshino and Y. Satoh and M. Odahara and D. Okazawa and A. Nagashima},
  title = {Epitaxial Growth of (Ga,Fe)As by Molecular Beam Epitaxy},
  journal = {Extended Abstracts of 4th Symposium on the Physics and Application of Spin-Related Phenomena in Semiconductors, Sendai},
  year = 1998,
}

@article{CTT100440327,
  author = {J. Yoshino and Y. Satoh and M. Odahara and D. Okazawa and A. Nagashima},
  title = {Studies on low temperature MBE growth of iron doped GaAs and its magnetic properties},
  journal = {Extended abstracts of 4th Symposium on the physics and application of spin-related phenomena in semiconductors, Sendai},
  year = 1998,
}

@article{CTT100440305,
  author = {Y. Satoh and N. Inoue and J. Yoshino},
  title = {Electronic and Magnetic Properties of n-Type Ga<sub>1-x</sub>Mn<sub>x</sub>As},
  journal = {Record of the 17th Electronic Materials Symposium, Izu-Nagaoka},
  year = 1998,
}

@article{CTT100420994,
  author = {J. Yoshino},
  title = {Electronic and Magnetic Properties of GaMnAs},
  journal = {Symposium records of Japan-Polish symposium on diluted magnetic semiconductors, Warsaw, 1997},
  year = 1997,
}

@article{CTT100440304,
  author = {Y. Satoh and Y. Nishikawa and J. Yoshino},
  title = {Ferromagnetic exchange interaction in Ga<sub>1-x</sub>Mn<sub>x</sub>As},
  journal = {Record of the 16th Electronic Materials Symposium, Osaka},
  year = 1997,
}

@article{CTT100440329,
  author = {J. Yoshino},
  title = {Theoretical estimation of thermoelectric figure of merit in sintered materials and proposal of grain-sizegraded structures},
  journal = {Proceedings of 4th International conference on Functionally graded materials, Ed. by I. Shiota and Y. Miyamoto, Elsevior Sci. BV},
  year = 1997,
}

@article{CTT100440306,
  author = {Y. Satoh and N. Inoue and Y. Nishikawa and J. Yoshino},
  title = {Systematic studies on carrier concentration dependence of Curie-Weiss temperature on GaMnAs},
  journal = {Extended Abstracts of 3rd Symposium on the Physics and Application of Spin-Related Phenomena in Semiconductors, Sendai},
  year = 1997,
}

@article{CTT100420996,
  author = {K. Hara and H. Machimura and M. Usui and H. Munekata, H. and Kukimoto and J. Yoshino},
  title = {Gas-source molecular beam epitaxy of wide-band-gap Zn<sub>1-x</sub> Hg<sub>x</sub> Se(x=0-0.14)},
  journal = {Applied Physics Letters},
  year = 1995,
}

@article{CTT100420998,
  author = {K. Hayashi and K. Hara and J. Yoshino and H. Kukimoto},
  title = {Surface reactions in photoassisted MOVPE growth of ZnSe as studied by in-situ optical refrection measurements},
  journal = {Applied Surface Science},
  year = 1994,
}

@inproceedings{CTT100723230,
  author = {安藤 達人 and 加来 滋 and 吉野 淳二},
  title = {2次元トポロジカル絶縁体AlSb/InAs/GaSb/AlSbヘテロ構造の断面STM/STS観測},
  booktitle = {第63回応用物理学会春季学術講演会公演予稿集},
  year = 2016,
}

@inproceedings{CTT100723233,
  author = {荒川 和哉 and 武富 優綺 and 加来 滋 and 吉野 淳二},
  title = {Ga1-xMnxAsの巨大熱電能の起源の解明},
  booktitle = {第63回応用物理学会春季学術講演会講演予稿集},
  year = 2016,
}

@inproceedings{CTT100723231,
  author = {武富 優綺 and 加来 滋 and 吉野 淳二},
  title = {MnドープInAs-GaSb超格子の熱電特性},
  booktitle = {第63回応用物理学会春季学術講演会講演予稿集},
  year = 2016,
}

@inproceedings{CTT100724430,
  author = {Masahiro Hiraoka and Shigeru Kaku and Junji Yoshino},
  title = {STM observation of initial growth surface of MnAs on GaAs(001)},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100723240,
  author = {Tatsuhito Ando and Shigeru Kaku and Masayuki Tsukui and Junji Yoshino},
  title = {X-STM observation on (110) surface of AlSb/InAs/GaSb/AlSb hetero-structure},
  booktitle = {MSS-17 Abstracts},
  year = 2015,
}

@inproceedings{CTT100723237,
  author = {荒川 和哉 and 武富優綺 and 加来 滋 and 吉野 淳二},
  title = {Large thermoelectric power of GaMnAs},
  booktitle = {34th Electronic Materials Symposium(EMS-34) Extendex abstracts},
  year = 2015,
}

@inproceedings{CTT100723238,
  author = {武富 優綺 and 荒川 和哉 and 山上 順也 and 加来 滋 and 吉野 淳二},
  title = {Thermoelectric measurement of GaSb/InAs/AlSb superlattices},
  booktitle = {34th Electronic Materials Symposium(EMS-34) Extended abstracts},
  year = 2015,
}

@inproceedings{CTT100723239,
  author = {Shigeru Kaku and Masayuki Tsukui and Tatsuhito Ando and Junji Yoshino},
  title = {X-STM measurements of band bending across GaAs/AlAs heterojunction},
  booktitle = {MSS-17 Abstracts},
  year = 2015,
}

@inproceedings{CTT100735101,
  author = {Marques-Gonzalez and S. Fujii and M. Kiguchi and J-Y. Shin and H. Shinokubo},
  title = {An anti-aromaticapproach to enhanced molecular charge-transport},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100527860,
  author = {M. Watanabe and H. Toyao and J. Okabayashi and J. Yoshino},
  title = {Current-driven magnetization reversal in GaMnAs-based magnetic tunneling junctions: Comparison between single and double barrier structures},
  booktitle = {Abstracts of The 11th Symposium on Physics and Application of Spin-Related Phenomena in Semiconductors},
  year = 2006,
}

@inproceedings{CTT100527864,
  author = {T. Arai and M. Suzuki and Y. Ueno and J. Okabayashi and J. Yoshino},
  title = {Structure transition between two GaAs (001) c(4x4) surface reconstructions under As4 flux},
  booktitle = {Abstract workbook of The 14th International Conference on Molecular Beam Epitaxy},
  year = 2006,
}

@inproceedings{CTT100527862,
  author = {M. Suzuki and T. Arai and Y. Oueno and J. Okabayashi and J. Yoshino},
  title = {Study on initial growth surface of MnAs on two different GaAs(001) c(4x4) reconstructions},
  booktitle = {Abstract workbook of The 14th International Conference on Molecular Beam Epitaxy},
  year = 2006,
}

@inproceedings{CTT100527856,
  author = {H. Toyao and Y. Tanikawa and M. Watanabe and J. Yoshino},
  title = {Current-driven magnetic-orientation reversal achieved in GaMnAs-based double barrier TMR structures at extremely low-threshold current density},
  booktitle = {Abstracts of The 4th International Conference on Physics and Application of Spin-Related Phenomena in Semiconductors},
  year = 2006,
}

@inproceedings{CTT100420997,
  author = {KAZUHIKO HARA and hiroshi kukimoto and J. Yoshino},
  title = {Optical properties of AlP-GaP short-period superlattices},
  booktitle = {Solid-State Electronics},
  year = 1994,
}

@misc{CTT100595810,
  author = {吉野淳二},
  title = {可視光半導体レーザー用III-V族化合物混晶に関する研究},
  year = 1982,
}



@phdthesis{CTT100595810,
  author = {吉野淳二},
  title = {可視光半導体レーザー用III-V族化合物混晶に関する研究},
  school = {東京工業大学},
  year = 1982,
}