@book{CTT100678456,
author = {Satoshi Sugahara and Yota Takamura and Yusuke Shuto and Shuu’ichirou Yamamoto},
title = {Field-Effect Spin-Transistors},
publisher = {Springer Netherlands},
year = 2014,
}
@article{CTT100542509,
author = {S. Sugahara},
title = {Spin Metal-Oxide-Semiconductor Field-Effect Transistors (Spin MOSFETs) for Spin-Electronic Integrated Circuits},
journal = {IEE Proc. Circuits, Device-Systems},
year = 2005,
}
@article{CTT100542510,
author = {S.Sugahara and M.Tanaka},
title = {A Spin Metal-Oxide-Semiconductor Field-effect Transistor Using Half-Metallic-Ferromagnet Contacts for the Source and Drain},
journal = {Appl. Phys. Lett.},
year = 2004,
}
@article{CTT100902513,
author = {T. Akushichi and Y. Takamura and Y. Shiotsu and S. Yamamoto and S. Sugahara},
title = {Spin Injection Behavior of CoFe/MgO/Si Tunnel Contacts: Effects of Radical Oxygen Annealing},
journal = {J. Electron. Mater.},
year = 2023,
}
@article{CTT100886911,
author = {Yusaku Shiotsu and Satoshi Sugahara},
title = {Binarized Neural Network Accelerator Macro Using Ultralow-Voltage Retention SRAM for Energy Minimum-Point Operation},
journal = {IEEE J. Explor. Solid-State Comput. Devices Circuits},
year = 2022,
}
@article{CTT100873419,
author = {Hayato Yoshida and Yusaku Shiotsu and Daiki Kitagata and Shuichiro Yamamoto and Satoshi Sugahara},
title = {Ultralow-Voltage Retention SRAM With a Power Gating Cell Architecture Using Header and Footer Power-Switches},
journal = {IEEE Open Journal of Circuits and Systems},
year = 2021,
}
@article{CTT100846255,
author = {Y. Shiotsu and S. Yamamoto and Y. Shuto and H. Funakubo and M. K. Kurosawa and S. Sugahara},
title = {Modeling and Design of a New Piezoelectronic Transistor for Ultralow-Voltage High-Speed Integrated Circuits},
journal = {IEEE Trans. on Electron Devices},
year = 2020,
}
@article{CTT100846256,
author = {Y. Shiotsu and T. Seino and T. Kondo and S. Sugahara},
title = {Modeling and Design of Thin-Film π-Type Micro Thermoelectric Generator Using Vacuum/Insulator-Hybrid Isolation for Self-Powered Wearable Devices},
journal = {IEEE Trans. on Electron Devices},
year = 2020,
}
@article{CTT100840211,
author = {Daiki Kitagata and Shuichiro Yamamoto and SATOSHI SUGAHARA},
title = {Proactive useless data flush architecture for nonvolatile SRAM using magnetic tunnel junctions},
journal = {},
year = 2020,
}
@article{CTT100814139,
author = {Y. Shiotsu and T. Seino and N. Chiwaki and S. Sugahara},
title = {Thin-Film π-Type Micro TEG Using Vacuum/Insulator-Hybrid Isolation with Convex-Shape Hot-Plate Module Structure for Wearable Device Applications},
journal = {Journal of Physics: Conference Series},
year = 2019,
}
@article{CTT100814140,
author = {D. Kitagata and S. Yamamoto and S. Sugahara},
title = {Design and energy-efficient architectures for nonvolatile static random access memory using magnetic tunnel junctions},
journal = {Jpn. J. Appl. Phys},
year = 2019,
}
@article{CTT100784483,
author = {N Chiwaki and T Seino and S Sugahara},
title = {Design and Performance of Transverse-Type Thin-Film Nano-Thermoelectric Generators},
journal = {Journal of Physics: Conf. Series},
year = 2018,
}
@article{CTT100784482,
author = {N. Chiwaki and T. Seino and S. Sugahara},
title = {Design and performance of transverse-type thin-film micro thermoelectric generators},
journal = {J. Micromech. Microeng.},
year = 2018,
}
@article{CTT100754182,
author = {Y. Takamura and Y. Shuto and S. Yamamoto and H. Funakubo and M. Kurosawa and S. Nakagawa and S. Sugahara},
title = {Inverse-magnetostriction-induced switching current reduction of STT-MTJs and its application for low-voltage MRAM},
journal = {Solid-State Electron.},
year = 2016,
}
@article{CTT100687451,
author = {T. Akushichi and Y. Takamura and Y. Shuto and S. Sugahara},
title = {Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlOx/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing},
journal = {J. Appl. Phys.},
year = 2015,
}
@article{CTT100686150,
author = {Y. Takamura and T. Akushichi and Y. Shuto and S. Sugahara},
title = {Analysis and design of nonlocal spin devices with electric-field-induced spin-transport acceleration},
journal = {J. Appl. Phys.},
year = 2015,
}
@article{CTT100686351,
author = {Y. Kawame and T. Akushichi and Y. Takamura and Y. Shuto and S. Sugahara},
title = {Fabrication and characterization of spin injector using a high-quality B2-ordered-Co2FeSi0.5Al0.5/MgO/Si(100) tunnel contact},
journal = {J. Appl. Phys.},
year = 2015,
}
@article{CTT100695027,
author = {R. Nakane and Y. Shuto and H. Sukegawa and Z.C. Wen and S. Yamamoto and S. Mitani and M. Tanaka and K. Inomata and S. Sugahara},
title = {Fabrication of pseudo-spin-MOSFETs using a multi-project wafer CMOS chip},
journal = {Solid-State Electronics},
year = 2014,
}
@article{CTT100669488,
author = {Y. Takamura and T. Akushichi and A. Sadono and T. Okishio and Y. Shuto and S. Sugahara},
title = {Analysis of Hanle-effect signals observed in Si-channel spin accumulation devices},
journal = {J. Appl. Phys.},
year = 2014,
}
@article{CTT100640880,
author = {Y. Takamura and K. Hayashi and Y. Shuto and R. Nakane and S. Sugahara},
title = {Fabrication of High-Quality Co2FeSi/SiOxNy/Si(100) Tunnel Contacts Using Radical-Oxynitridation-Formed SiOxNy Barrier for Si-Based Spin Transistors},
journal = {J. Electron. Mater.},
year = 2012,
}
@article{CTT100640883,
author = {Y. Takamura and S. Sugahara},
title = {Analysis and control of the Hanle effect in metal–oxide–semiconductor inversion channels},
journal = {J. Appl. Phys.},
year = 2012,
}
@article{CTT100640885,
author = {Y. Shuto and S. Yamamoto and S. Sugahara},
title = {Evaluation and control of break-even time of nonvolatile SRAM based on spin-transistor architecture with spin-transfer-torque MTJs},
journal = {J. Appl. Phys.},
year = 2012,
}
@article{CTT100640886,
author = {Y. Takamura and S. Sugahara},
title = {Analysis and Design of Hanle-Effect Spin Transistors at 300 K},
journal = {IEEE Magn. Lett.},
year = 2011,
}
@article{CTT100672141,
author = {Shinsuke Yada and Pham Nam Hai and Satoshi Sugahara and Masaaki Tanaka},
title = {Structural and magnetic properties of Ge1-xMnx thin films grown on Ge (001) substrates},
journal = {Journal of applied physics},
year = 2011,
}
@article{CTT100640889,
author = {S. Yamamoto and Y. Shuto and S. Sugahara},
title = {Nonvolatile delay flip-flop using spin-transistor architecture with spin transfer torque MTJs for power-gating systems},
journal = {IET Electronics Letters},
year = 2011,
}
@article{CTT100641000,
author = {Y. Takamura and T. Sakurai and R. Nakane and Y. Shuto and S. Sugahara},
title = {Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films formed by rapid thermal annealing},
journal = {J. Appl. Phys.},
year = 2011,
}
@article{CTT100619517,
author = {Y. Takamura and R. Nakane and S. Sugahara},
title = {Quantitative analysis of atomic disorders in full-Heusler Co2FeSi alloy thin films using x-ray diffraction with Co Kα and Cu Kα sources},
journal = {J. Appl. Phys.},
year = 2010,
}
@article{CTT100619518,
author = {K. Hayashi and Y. Takamura and R. Nakane and S. Sugahara},
title = {Formation of Co2FeSi/SiOxNy/Si tunnel junctions for Si-based spin transistors},
journal = {J. Appl. Phys.},
year = 2010,
}
@article{CTT100629984,
author = {Y. Shuto and R. Nakane and W. H. Wang and H. Sukegawa and S. Yamamoto and M. Tanaka and K. Inomata and S. Sugahara},
title = {A New Spin-Functional Metal-Oxide-Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology: Pseudo-Spin-MOSFET},
journal = {Appl. Phys. Exp.},
year = 2010,
}
@article{CTT100629902,
author = {Shuu'ichirou Yamamoto and Yusuke Shuto and Satoshi Sugahara},
title = {Nonvolatile SRAM (NV-SRAM) Using Resistive Switching Devices: Variable-Transconductance MOSFET Approach},
journal = {Jpn. J. Appl. Phys},
year = 2010,
}
@article{CTT100629900,
author = {S. Yamamoto and Satoshi Sugahara},
title = {Nonvolatile Delay Flip-Flop Based on Spin-Transistor Architecture and Its Power-Gating Applications},
journal = {Jpn. J. Appl. Phys.},
year = 2010,
}
@article{CTT100583536,
author = {Y. Shuto and M. Tanaka and S. Sugahara},
title = {Epitaxial Growth and Magnetic Properties of Ferromagnetic Semiconductor Ge1-xFex Thin Films Epitaxially Grown on Si(001) Substrates},
journal = {Jpn. J. Appl. Phys.},
year = 2009,
}
@article{CTT100575375,
author = {Shuu'ichirou Yamamoto and Satoshi Sugahara},
title = {Nonvolatile SRAM and flip-flop architectures using magnetic tunnel junctions with current-induced magnetization switching technology},
journal = {Jpn. J. Appl. Phys.},
year = 2009,
}
@article{CTT100583529,
author = {Y. Takamura and R. Nakane and S. Sugahara},
title = {Analysis of L21-ordering in full-Heusler Co2FeSi alloy thin films formed by rapid thermal annealing},
journal = {J. Appl. Phys.},
year = 2009,
}
@article{CTT100575374,
author = {Yusuke Shuto and Shuu'ichirou Yamamoto and Satoshi Sugahara},
title = {Nonvolatile SRAM architecture using MOSFET-based spin-transistors},
journal = {J. Appl. Phys.},
year = 2009,
}
@article{CTT100583531,
author = {S. Yamamoto and S. Sugahara},
title = {Nonvolatile Static Random Access Memory (NV-SRAM) Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture},
journal = {Jpn. J. Appl. Phys.},
year = 2009,
}
@article{CTT100583533,
author = {Y. Takamura and A. Nishijima and Y. Nagahama and R. Nakane and S. Sugahara},
title = {Formation of Si- and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors},
journal = {ECS Trans.},
year = 2008,
}
@article{CTT100589205,
author = {Y. Takamura and R. Nakane and H. Munekata and S. Sugahara},
title = {Characterization of Half-Metallic L21-Phase Co2FeSi Full-Heusler Alloy Thin Films Formed by Rapid Thermal Annealing},
journal = {J. Appl. Phys.},
year = 2008,
}
@article{CTT100564106,
author = {S. Takagi and T. Irisawa and T. Tezuka and T. Numata and S. Nakaharai and N. Hirashita and Y. Moriyama and K. Usuda and E. Toyoda and S. Dissanayake and M. Shichijo and R. Nakane and S. Sugahara and M. Takenaka and N. Sugiyama},
title = {Carrier-transport-enhanced channel CMOS for improved power consumption and performance},
journal = {IEEE Trans. Electron Devices},
year = 2008,
}
@article{CTT100583534,
author = {Y. Shuto and M. Tanaka and S. Sugahara},
title = {Germanium-based ferromagnetic semiconductor Ge1-xFex for silicon spintronics},
journal = {ECS Transactions},
year = 2008,
}
@article{CTT100672153,
author = {Pham Nam Hai and Satoshi Sugahara and Masaaki Tanaka},
title = {Reconfigurable Logic Gates Using Single-Electron Spin Transistors},
journal = {Japanese Journal of Applied Physics},
year = 2007,
}
@article{CTT100534536,
author = {S.Takagi and T.Maeda and N.Taoka and M.Nishizawa and Y.Morita and K.Ikeda and Y.Yamashita and M.Nishikawa and H.Kumagai and R.Nakane and S.Sugahara and N.Sugiyama},
title = {Gate Dielectric Formation and MIS Interface Characterization on Ge},
journal = {Microelectronic Engineering},
year = 2007,
}
@article{CTT100564099,
author = {M. Shichijo and R. Nakane and S. Sugahara and S. Takagi},
title = {Fabrication of III-V-O-I (III-V on Insulator) structures on Si using micro-channel epitaxy with a two-step growth technique},
journal = {Jpn. J. Appl. Phys.},
year = 2007,
}
@article{CTT100700404,
author = {Takuya Hoshii and Satoshi Sugahara and Shin-ichi Takagi},
title = {Effect of Tensile Strain on Gate Current of Strained-Si n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors},
journal = {Japanese Journal of Applied Physics},
year = 2007,
}
@article{CTT100534539,
author = {T.Uehara and H.Matsubara and S.Sugahara and S.Takagi},
title = {Ultrathin Ge-On-Insulator Metal Source/Drain p-Channel MOSFETs Fabricated By Low Temperature Molecular Beam Epitaxy},
journal = {Jpn. J. Appl. Phys.},
year = 2007,
}
@article{CTT100534541,
author = {T.Hoshii and S.Sugahara and S.Takagi},
title = {Effect of Tensile Strain on Gate Current of Strained-Si n-MOSFETs},
journal = {Jpn. J. Appl. Phys.},
year = 2007,
}
@article{CTT100534470,
author = {Y.Shuto and M.Tanaka and S.Sugahara},
title = {Structural and Magnetic Properties of Epitaxially Grown Ge1-xFex Thin Films: Fe Concentration Dependence},
journal = {Appl. Phys. Lett.},
year = 2007,
}
@article{CTT100534477,
author = {Y.Shuto and M.Tanaka and S.Sugahara},
title = {Epitaxial Growth and Magnetic Properties of a New Group-IV Ferromagnetic Semiconductor: Ge1-xFex},
journal = {Physica Status Solidi C},
year = 2006,
}
@article{CTT100534476,
author = {S.Shuto and M.Tanaka and S.Sugahara},
title = {Magneto-Optical Properties of a New Group IV Ferromagnetic Semiconductor Ge1-xFex Grown by Low-Temperature Molecular Beam Epitaxy”, . vol.99, no.8, 2006, pp.08D516/1-3},
journal = {J. Appl. Phys},
year = 2006,
}
@article{CTT100534474,
author = {R.Nakane and M.Tanaka and S.Sugahara},
title = {Preparation and Characterization of Ferromagnetic DO3-phase Fe3Si Thin Films on Silicon-on-Insulator Substrates for Si-based Spin-Electronic Device Applications},
journal = {Appl. Phys. Lett.},
year = 2006,
}
@article{CTT100534783,
author = {S.Sugahara and K.L. Lee and S. Yada and M.Tanaka},
title = {Precipitation of Amorphous Ferromagnetic Semiconductor Phase in Epitaxially Grown Mn-Doped Ge Thin Films},
journal = {Jpn. J. Appl. Phys.},
year = 2005,
}
@article{CTT100534785,
author = {S.Sugahara and M.Tanaka},
title = {A Spin Metal-Oxide-Semiconductor Field-Effect Transistor (Spin MOSFET) with a Ferromagnetic Semiconductor for the Channel},
journal = {J. Appl. Phys.},
year = 2005,
}
@article{CTT100600058,
author = {A. M. Nazmul and Tomohiro Amemiya and Yusuke Shuto and Satoshi Sugahara and Masaaki Tanaka},
title = {High temperature ferromagnetism in GaAs-Based heterostructures with Mn δ doping},
journal = {Phys. Rev. Lett.},
year = 2005,
}
@inproceedings{CTT100886912,
author = {伊藤克俊 and 塩津勇作 and 山本修一郎 and 菅原聡},
title = {新型超低電圧リテンションSRAM (ULVR-SRAM)セルの提案},
booktitle = {},
year = 2022,
}
@inproceedings{CTT100886913,
author = {加藤豪人 and 塩津勇作 and 菅原聡 and 山本修一郎},
title = {ニアスレッショルド電圧駆動ULVR-SRAMのパワーゲーティング性能},
booktitle = {},
year = 2022,
}
@inproceedings{CTT100886914,
author = {山崎修 and 塩津勇作 and 菅原聡 and 山本修一郎},
title = {FinFETを用いた低電圧駆動不揮発性SRAM (NV-SRAM)の設計},
booktitle = {},
year = 2022,
}
@inproceedings{CTT100886910,
author = {塩津勇作 and 原拓実 and 菅原聡},
title = {超低電圧リテンションSRAMのエネルギー最小点動作とそのBNNアクセラレータへの応用},
booktitle = {},
year = 2022,
}
@inproceedings{CTT100873410,
author = {塩津勇作 and 菅原聡},
title = {ULVR-SRAMを用いたニューラルネットワークアクセラレータの性能},
booktitle = {},
year = 2022,
}
@inproceedings{CTT100873415,
author = {矢野広気 and 塩津勇作 and 山本修一郎 and 菅原聡},
title = {超低電圧リテンションSRAMのパワーゲーティング性能とアーキテクチャ},
booktitle = {},
year = 2022,
}
@inproceedings{CTT100873408,
author = {佐貫海斗 and 遠藤弘之 and 塩津勇作 and 菅原聡},
title = {各種層間絶縁材料を用いたトランスバース型薄膜µTEGの高精度集中定数回路モデル},
booktitle = {},
year = 2022,
}
@inproceedings{CTT100873417,
author = {塩津勇作 and 山本修一郎 and 菅原聡},
title = {不揮発性SRAM：エッジコンピューティングの革新的低消費電力技術},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100873403,
author = {遠藤弘之 and 塩津勇作 and 菅原聡},
title = {薄膜トランスバース型マイクロTEG モジュールの簡略化集中定数回路モデル},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100873414,
author = {原拓実 and 塩津勇作 and 山本修一郎 and 菅原聡},
title = {ニアスレッショルド電圧動作ULVR-SRAMマクロの設計と解析},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100873406,
author = {斎藤修平 and 塩津勇作 and 原拓実 and 山本修一郎 and 菅原聡},
title = {ボディバイアス制御ULVR-SRAMの設計と解析},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100873404,
author = {塩津勇作 and 山本修一郎 and 菅原聡},
title = {ULVR-SRAMを用いたBNNアクセラレータの提案と性能予測},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100873407,
author = {松﨑翼 and 塩津勇作 and 山本修一郎 and 菅原聡},
title = {バルクデバイスを用いた超低電圧リテンションFlip-Flopの設計と解析},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100873418,
author = {菅原聡},
title = {体温を用いた熱電発電モジュールの設計技術},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100873401,
author = {原拓実 and 塩津勇作 and 山本修一郎 and 菅原聡},
title = {ニアスレッショルド電圧動作超低電圧リテンションSRAMの設計と性能解析},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100873402,
author = {塩津勇作 and 吉田隼 and 山本修一郎 and 菅原聡},
title = {ボディバイアス効果を用いたULVR-SRAMセルの設計とそのパワーゲーティング性能},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100845648,
author = {廣木 源 and 高村 陽太 and 松下 瑛介 and 菅原 聡 and 中川 茂樹},
title = {Rapid thermal annealingによる合金化を用いた熱電フルホイスラー合金Fe2TiAl薄膜の形成と評価},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100846272,
author = {遠藤弘之 and 塩津勇作 and 熊谷颯人 and 菅原聡},
title = {薄膜トランスバース型マイクロTEGモジュールの高精度モデリング},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100846270,
author = {熊谷颯人 and 塩津勇作 and 遠藤弘之 and 菅原聡},
title = {シリコンナノワイヤを用いたトランスバース型マイクロTEGモジュールのモデリング},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100846267,
author = {瀧口憲一郎 and 塩津勇作 and 松﨑翼 and 山本修一郎 and 菅原聡},
title = {超低電圧リテンションフリップフロップ（ULVR-FF）のエネルギー極小点動作},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100846265,
author = {吉田隼 and 塩津勇作 and 山本修一郎 and 菅原聡},
title = {ULVR-SRAMを用いたキャッシュのパワーゲーティング性能},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100846263,
author = {塩津勇作 and 山本修一郎 and 菅原聡},
title = {超低電圧リテンションSRAM (ULVR-SRAM)のエネルギー極小点動作},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100846260,
author = {原拓実 and 吉田隼 and 塩津勇作 and 山本修一郎 and 菅原聡},
title = {ニアスレッショルド電圧動作ULVR-SRAMセルの設計},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100846254,
author = {H. Kumagai and Y. Shiotsu and S. Sugahara},
title = {Modeling and design of transverse-type micro thermoelectric generator using silicon nanowires},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100846274,
author = {吉田隼 and 北形大樹 and 山本修一郎 and 菅原聡},
title = {各種リテンションSRAMのパワーゲーティングにおける電力削減効率に関する電源遮断可能時間分布の影響},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100846278,
author = {熊谷颯人 and 塩津勇作 and 遠藤弘之 and 菅原聡},
title = {シリコンナノワイヤを用いたトランスバース型マイクロTEGモジュールの高出力設計},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100846277,
author = {北形大樹 and 吉田隼 and 塩津勇作 and 山本修一郎 and 菅原聡},
title = {新型超低電圧リテンションSRAMセルの設計と解析},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100846276,
author = {瀧口憲一郎 and 北形大樹 and 松﨑翼 and 山本修一郎 and 菅原聡},
title = {新型超低電圧リテンションFFの提案},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100846275,
author = {塩津勇作 and 北形大樹 and 山本修一郎 and 菅原聡},
title = {新型超低電圧リテンションSRAMマクロの設計と解析},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100840216,
author = {吉田隼 and 北形大樹 and 山本修一郎 and 菅原聡},
title = {新型擬似不揮発性SRAMセルの提案},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100840218,
author = {原拓実 and 吉田隼 and 北形大樹 and 山本修一郎 and 菅原聡},
title = {ニアスレッショルド電圧動作擬似不揮発SRAMセルの設計と解析},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100840217,
author = {熊谷颯人 and 塩津勇作 and 遠藤弘之 and 菅原聡},
title = {“シリコンナノワイヤを用いたトランスバース型マイクロTEGモジュールの完全最適設計とその性能},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100840215,
author = {塩津勇作 and 遠藤弘之 and 熊谷颯人 and 菅原聡},
title = {ホイスラー合金を用いた薄膜トランスバース型マイクロTEGモジュールの最適設計},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100814136,
author = {D. Kitagata and S. Yamamoto and S. Sugahara},
title = {A New Store Energy and Latency Reduction Architecture for Nonvolatile SRAM Using STT-MTJs: Proactive Useless Data Flush Architecture},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100814144,
author = {吉田隼 and 北形大樹 and 山本修一郎 and 菅原聡},
title = {不揮発/擬似不揮発記憶を用いたSRAMのパワーゲーティング性能},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100840214,
author = {瀧口憲一郎 and 北形大樹 and 松﨑翼 and 山本修一郎 and 菅原聡},
title = {不揮発/擬似不揮発性FFを用いたパワーゲーティングの性能評価},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100814146,
author = {北形大樹 and 山本修一郎 and 菅原聡},
title = {NV-SRAMを用いたUseless dataの積極的破棄による不揮発性パワーゲーティング},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100814145,
author = {塩津勇作 and 山本修一郎 and 舟窪浩 and 黒澤実 and 菅原聡},
title = {新構造ピエゾエレクトロニックトランジスタを用いたFFの設計と性能},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100814143,
author = {熊谷颯人 and 塩津勇作 and 遠藤弘之 and 菅原聡},
title = {シリコンナノワイヤを用いたトランスバース型マイクロTEGモジュールの最適設計},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100814142,
author = {原拓実 and 吉田隼 and 北形大樹 and 山本修一郎 and 菅原聡},
title = {各種リテンション技術を用いたSRAMのパワーゲーティング性能},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100814141,
author = {遠藤弘之 and 熊谷颯人 and 塩津勇作 and 菅原聡},
title = {薄膜トランスバース型μTEGモジュールの最適構造における層間絶縁材料の影響”，第80回応用物理学会秋季学術講演会},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100814137,
author = {Yusaku Shiotsu and Shuichiro Yamamoto and HIROSHI FUNAKUBO and Minoru Kuribayashi Kurosawa and SATOSHI SUGAHARA},
title = {Design of New Piezoelectronic Transistors and Their Ultralow-Voltage SRAM Application},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100814138,
author = {Y. Shiotsu and T. Okubo and H. Kumagai and S. Sugahara},
title = {Design and Performance of Silicon Nanowire Micro Thermoelectric Generators},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100814242,
author = {塩津勇作 and 山本修一郎 and 舟窪浩 and 黒澤実 and 菅原聡},
title = {新構造ピエゾエレクトロニックトランジスタの低リーク設計とそのSRAMへの応用},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100814148,
author = {熊谷颯人 and 塩津勇作 and 菅原聡},
title = {薄膜π型マイクロTEGモジュールの最適設計における熱電材料膜厚の影響},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100814150,
author = {北形大樹 and 松﨑翼 and 山本修一郎 and 菅原聡},
title = {擬似不揮発性FFの速度性能優先設計とその回路性能},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100814243,
author = {北形大樹 and 松﨑翼 and 山本修一郎 and 菅原聡},
title = {擬似不揮発性FFの速度性能優先設計とその回路性能},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100814147,
author = {吉田隼 and 北形大樹 and 山本修一郎 and 菅原聡},
title = {デュアルパワースイッチを用いた擬似不揮発性SRAMの設計と解析},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100780950,
author = {Y. Shiotsu and T. Seino and N. Chiwaki and S. Sugahara},
title = {Thin-Film π-Type Micro TEG Using Vacuum/Insulator-Hybrid Isolation with Convex-Shape Hot-Plate Module Structure for Wearable Device Applications},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100784484,
author = {D. Kitagata and S. Yamamoto and S. Sugahara},
title = {Design and Performance of Virtually Nonvolatile Retention Flip-Flop Using Dual-Mode Inverters},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100784485,
author = {Kitagata and H. Yoshida and S. Yamamoto and S. Sugahara},
title = {Virtually Nonvolatile Retention SRAM cell Using Dual-Mode Inverters},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100771714,
author = {塩津勇作 and 山本修一郎 and 舟窪浩 and 黒澤実 and 菅原聡},
title = {新構造ピエゾエレクトロニックトランジスタの設計方法},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100774047,
author = {熊谷颯人 and 塩津勇作 and 大久保岳 and 菅原聡},
title = {各種層間絶縁膜を用いた薄膜π型マイクロTEGモジュールの最適設計},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100784490,
author = {北形大樹 and 山本修一郎 and 菅原聡},
title = {デュアルモードインバータを用いた疑似不揮発性FFの設計と解析},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100784489,
author = {吉田隼 and 北形大樹 and 山本修一郎 and 菅原聡},
title = {デュアルモードインバータを用いた疑似不揮発性SRAMの設計と解析},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100784486,
author = {D. Kitagata and S. Yamamoto and S. Sugahara},
title = {A New Architecture of Store Energy and Latency Reduction for Nonvolatile SRAM Based on Spintronics/CMOS-Hybrid Technology},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100768963,
author = {Y. Shiotsu and S. Yamamoto and Y. Shuto and H. Funakubo and M. K. Kurosawa and S. Sugahara},
title = {Design and circuit performance of a new piezoelectronic transistor},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100784487,
author = {D. Kitagata and S. Yamamoto and S. Sugahara},
title = {Virtually Nonovolatile Retention Flip-Flop Using FinFET Technology},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100784492,
author = {清野稔仁 and 山下涼音 and 千脇那菜 and 菅原聡},
title = {真空/絶縁体ハイブリッドアイソレーションを用いた薄膜π型μTEGの設計と性能},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100784493,
author = {北形大樹 and 山本修一郎 and 菅原聡},
title = {階層型ストアフリー電源遮断を用いた不揮発性SRAMのエネルギー性能},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100784491,
author = {大久保岳 and 千脇那菜 and 清野稔仁 and 山下涼音 and 菅原聡},
title = {真空/絶縁体ハイブリッドアイソレーションを用いた薄膜トランスバース型μTEGの設計と性能},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100784488,
author = {T. Seino and N. Chiwaki and S. Yamashita and S. Sugahara},
title = {Design and performance of pi-type thin-film nano-teg using vacuum/sio2-hybrid insulation module structure},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100768982,
author = {塩津勇作 and 山本修一郎 and 周藤悠介 and 舟窪浩 and 黒澤実 and 菅原聡},
title = {新構造ピエゾエレクトロニックトランジスタの設計とそのデバイス・回路性能},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100760746,
author = {Y. Takamura and S. Yamamoto and H. Funakubo and M.K. Kurosawa and S. Nakagawa and S. Sugahara},
title = {Piezoelectronic magnetoresistive-device and its low-voltage MRAM application},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100784470,
author = {D. Kitagata and S. Yamamoto and S. Sugahara},
title = {Hierarchical Store-Free Architecture for Nonvolatile SRAM Using STT-MTJs},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100784476,
author = {T. Seino and N. Chiwaki and S. Yamashita and S. Sugahara},
title = {Design and performance of p-type thin-film nano-teg modules},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100784474,
author = {Nana Chiwaki and Toshimasa Seino and SATOSHI SUGAHARA},
title = {DESIGN AND PERFORMANCE OF TRANSVERSE-TYPE THIN-FILM NANO-TEG MODULES},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100784477,
author = {Sugahara and Y. Shuto and S. Yamamoto and H. Funakubo and M. K. Kurosawa},
title = {Piezoelectronic Transistor for Low-Voltage High-Speed Integrated Electronics},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100784478,
author = {山下涼音 and 清野稔仁 and 千脇那菜 and 菅原聡},
title = {真空アイソレーションを用いた薄膜π型ナノ熱電発電モジュールの性能限界},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100784480,
author = {清野稔仁 and 山下涼音 and 千脇那菜 and 菅原聡},
title = {薄膜π型ナノ熱電発電モジュールの設計と性能},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100784479,
author = {千脇那菜 and 清野稔仁 and 山下涼音 and 菅原聡},
title = {薄膜トランスバース型ナノTEGモジュールの設計と性能予測},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100742637,
author = {北形大樹 and 周藤悠介 and 山本修一郎 and 菅原聡},
title = {不揮発性SRAMのアーキテクチャとエネルギー性能},
booktitle = {電子情報通信学会技術研究報告},
year = 2017,
}
@inproceedings{CTT100784481,
author = {北形大樹 and 山本修一郎 and 菅原聡},
title = {強磁性トンネル接合を用いた不揮発性SRAMの待機時電力削減能力},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100742359,
author = {北形大樹 and 周藤悠介 and 山本修一郎 and 菅原聡},
title = {不揮発性SRAMの設計とエネルギー性能の解析},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100742360,
author = {清野稔仁 and 悪七泰樹 and 菅原聡},
title = {CoFe/HfO2/Siスピン注入源の作製と評価},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100742361,
author = {近藤剛 and 千脇那菜 and 菅原聡},
title = {薄膜熱電材料を用いた熱電発電モジュールの設計と性能},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100742362,
author = {千脇那菜 and 近藤剛 and 菅原聡},
title = {薄膜トランスバース型マイクロ熱電発電モジュールの設計と性能予測},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100742352,
author = {T. Akushichi and D. Kitagata and Y. Shuto and S. Sugahara},
title = {Analysis of Spin Accumulation in a Si Channel Using CoFe/MgO/Si Spin Injectors},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100742353,
author = {D. Kitagata and Y. Shuto and S. Yamamoto and S. Sugahara},
title = {Analysis of Break-Even Time for Nonvolatile SRAM with SOTB Technology},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100742354,
author = {T. Kondo and N. Chiwaki and S. Sugahara},
title = {Design and performance of thin-film μTEG modules for wearable device applications},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100742357,
author = {清野稔仁 and 悪七泰樹 and 菅原聡},
title = {CoFe/Hf系酸化物/Siスピン注入源の作製と評価},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100742358,
author = {北形大樹 and 悪七泰樹 and 菅原聡},
title = {電界アシスト4端子非局所MOSデバイスの解析と設計},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100748214,
author = {Yota Takamura and Yusuke Shuto and Shu'uichiro Yamamoto and Hiroshi Funakubo and Minoru Kurosawa and Shigeki Nakagawa and Satoshi Sugahara},
title = {nverse-Magnetostriction-Induced Switching Current Reduction Technique for Spin-Transfer Torque MTJs and Its Low-Power MRAM Applications},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100742351,
author = {Y. Shuto and S. Yamamoto and S. Sugahara},
title = {Energy Performance of Nonvolatile Power-Gating SRAM Using SOTB Technology},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100742356,
author = {近藤剛 and 千脇那菜 and 菅原聡},
title = {高密度集積化薄膜トランスバース型マイクロ熱電発電モジュールの設計},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100742350,
author = {Y. Shuto and S. Yamamoto and S. Sugahara},
title = {Design and Implementation of Nonvolatile Power-Gating SRAM Using SOTB Technology},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100742349,
author = {T. Akushichi and D. Kitagata and Y. Takamura and Y. Shuto and S. Sugahara},
title = {Spin Accumulation in a Si Channel using High-Quality CoFe/MgO/Si Spin Injectors},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100742348,
author = {D. Kitagata and T. Akushichi and Y. Takamura and Y. Shuto and S. Sugahara},
title = {Robust Design of Electric-field-assisted Nonlocal Si-MOS Spin-devices},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100742347,
author = {Y. Shuto and S. Yamamoto and S. Sugahara},
title = {Nonvolatile Power-gating Architecture for SRAM using SOTB Technology},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100742346,
author = {Y. Shuto and S. Yamamoto and S. Sugahara},
title = {New power-gating architectures using nonvolatile retention: Comparative study of nonvolatile power-gating (NVPG) and normally-off architectures for SRAM},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100754181,
author = {Y. Takamura and Y. Shuto and S. Yamamoto and H. Funakubo and M.K. Kurosawa and S. Nakagawa and S. Sugahara},
title = {Inverse-magnetostriction-induced switching current reduction of STT-MTJs and its application for low-voltage MRAMs},
booktitle = {2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)},
year = 2016,
}
@inproceedings{CTT100696454,
author = {Y. Takamura and S. Nakagawa and S. Sugahara},
title = {Inverse-magnetostriction-induced switching current reductionfor spin-transfer torque MTJs},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100696453,
author = {高村陽太 and 中川茂樹 and 菅原聡},
title = {逆磁歪効果を用いたSTT-MTJのスイッチング電流削減},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100695036,
author = {T. Kondo and Y. Kawame and Y. Takamura and Y. Shuto and S. Sugahara},
title = {Fabrication of high-quality Co2FeSi0.5Al0.5/CoFe/MgO/Si spin injectors for Si-channel spin devices},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100695037,
author = {D. Kitagata and T. Akushichi and Y. Takamura and Y. Shuto and S. Sugahara},
title = {Design and analysis of electric-field-assisted nonlocal silicon-channel spin devices},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100695031,
author = {Yusuke Shuto and Shuu'ichirou Yamamoto and Satoshi Sugahara},
title = {Comparative study of power-gating architectures for nonvolatile FinFET-SRAM using spintronics-based retention technology},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100681135,
author = {周藤悠介 and 高橋克典 and 悪七泰樹 and 髙村陽太 and 菅原聡},
title = {CoFe/TIO2/Siスピン注入源の作製と評価},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100681123,
author = {悪七泰樹 and 髙村陽太 and 周藤悠介 and 菅原聡},
title = {高品質CoFe/MgO/SiおよびCoFe/AlOx/Siトンネルコンタクトを用いた Siチャネルへのスピン注入},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100681137,
author = {悪七泰樹 and 髙村陽太 and 周藤悠介 and 菅原聡},
title = {スピン蓄積デバイスにおける Hanle 効果の解析},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100681139,
author = {川目悠 and 悪七泰樹 and 髙村陽太 and 周藤悠介 and 菅原聡},
title = {(100)配向したCo2FeSi0.5Al0.5/MgO/Siトンネル接合の作製とそのスピン注入源応用},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100681132,
author = {髙村陽太 and 悪七泰樹 and 周藤悠介 and 菅原聡},
title = {電界誘起によるスピン伝導の加速を用いた非局所スピンデバイス},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100678096,
author = {Y. Kawame and Y. Shuto and K. Takahashi and T. Akushichi and Y. Takamura and S. Sugahara},
title = {Fabrication of a CoFe/TiO2/Si tunnel contact and its spin-injector application},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100678094,
author = {T. Akushichi and Y. Takamura and Y. Shuto and S. Sugahara},
title = {Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlOx/Si tunnel contacts with the high quality tunnel barriers prepared by radical-oxygen annealing},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100678037,
author = {Y. Takamura and T. Akushichi and Y. Shuto and S. Sugahara},
title = {Analysis and design of nonlocal spin devices with bias-induced spin-transport acceleration},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100695032,
author = {Yusuke Shuto and Shuu'ichirou Yamamoto and Satoshi Sugahara},
title = {Comparative Study of Power-Gating Architectures for Nonvolatile SRAM Cells Based on Spintronics Technology},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100678095,
author = {Y. Kawame and T. Akushichi and Y. Shuto and Y. Takamura and S. Sugahara},
title = {Fabrication and characterization of spin injector using a high-quality B2-ordered-Co2FeSi0.5Al0.5 /MgO/Si tunnel contact},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100695033,
author = {Yusuke Shuto and Shuu'ichirou Yamamoto and Satoshi Sugahara},
title = {Near-threshold voltage operation of nonvolatile SRAM cell based on pseudo-spin-FinFET architecture},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100676055,
author = {悪七泰樹 and 高村陽太 and 周藤悠介 and 菅原聡},
title = {ラジカル酸素アニールによる高品質トンネル障壁を有するCoFe/MgO/SiおよびCoFe/AlOx/Siコンタクトを用いたスピン蓄積の評価},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100695034,
author = {Yusuke Shuto and Shuu'ichirou Yamamoto and Satoshi Sugahara},
title = {0.5V operation and performance of nonvolatile SRAM cell based on pseudo-spin-FinFET architecture},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100676054,
author = {高村陽太 and 悪七泰樹 and 周藤悠介 and 菅原聡},
title = {3端子スピン蓄積デバイスにおけるHanle効果信号の解析},
booktitle = {第38回 日本磁気学会学術講演会},
year = 2014,
}
@inproceedings{CTT100676057,
author = {高橋克典 and 悪七泰樹 and 周藤悠介 and 高村陽太 and 菅原聡},
title = {CoFe/TiO2/Siトンネルコンタクトの作製とそのスピン注入源への応用},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100676056,
author = {川目悠 and 悪七泰樹 and 周藤悠介 and 高村陽太 and 菅原聡},
title = {B2型Co2FeSi0.5Al0.5/MgO/Siスピン注入源の作製と評価},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100695035,
author = {Y. Shuto and S. Yamamoto and S. Sugahara},
title = {Design and performance of nonvolatile SRAM cells based on pseudo-spin-FinFET architecture},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100668220,
author = {Y. Takamura and A. Sadono and T. Akushichi and T. Okishio and Y. Shuto and S. Sugahara},
title = {Analysis of Hanle-effect signals observed in a Si-channel spin accumulation device with a high-quality CoFe/MgO/Si spin injector},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100664403,
author = {Y. Takamura and A. Sadono and T. Akushichi and T. Okishio and Y. Shuto and S. Sugahara},
title = {Analysis of Hanle-effect signals observed in Si-channel spin accumulation devices},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658448,
author = {高村 陽太 and 中川 茂樹 and 菅原 聡},
title = {X 線回折を用いたフルホイスラー合金の規則構造評価技術},
booktitle = {電気学会研究会資料. MAG, マグネティックス研究会},
year = 2013,
}
@inproceedings{CTT100640866,
author = {S. Sugahara and Y. Shuto and S. Yamamoto},
title = {Energy-efficient nonvolatile logic systems based on CMOS/spintronics hybrid technology},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100658809,
author = {髙村 陽太 and 菅原 聡},
title = {スピンMOSFETにおけるHanle効果の解析(2)},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100640962,
author = {山本修一郎 and 周藤悠介 and 菅原聡},
title = {擬似スピンMOSFET技術を用いたFPGAの不揮発性パワーゲーティング},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100640868,
author = {菅原聡 and 周藤悠介 and 山本修一郎},
title = {スピントロニクス/CMOS融合技術:スピントランジスタ・アーキテクチャ},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100640960,
author = {山本修一郎 and 周藤悠介 and 菅原聡},
title = {擬似スピンMOSFETを用いた不揮発性DFF：BETにおける静的リーク電流の影響},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100640959,
author = {周藤悠介 and 山本修一郎 and 菅原聡},
title = {擬似スピンMOSFETを用いた不揮発性SRAM:スリープモード動作とその応用},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100640963,
author = {周藤悠介 and 山本修一郎 and 菅原聡},
title = {擬似スピンMOSFETを用いた不揮発性SRAMのスタティックノイズマージンとエネルギー性能の解析},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100640869,
author = {菅原 聡 and 周藤 悠介 and 山本 修一郎},
title = {スピントロニクス/CMOS融合技術: スピン機能MOSFETとその低消費電力ロジック応用},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100640901,
author = {Y. Shuto and S. Yamamoto and S. Sugahara},
title = {Analysis of static noise margin and power-gating efficiency of a new nonvolatile SRAM cell using pseudo-spin-MOSFETs},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100640902,
author = {Y. Shuto and S. Yamamoto and S. Sugahara},
title = {Static noise margin and power-gating efficiency of a new nonvolatile SRAM cell based on pseudo-spin-transistor architecture},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100640965,
author = {周藤悠介 and 山本修一郎 and 菅原聡},
title = {擬似スピンMOSFETを用いた不揮発性SRAM:スタティックノイズマージン評価},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100640870,
author = {菅原聡},
title = {CMOS/スピントロニクス融合技術による不揮発性ロジックシステムの展望},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100640967,
author = {置塩貴雄 and 高村陽太 and 菅原聡},
title = {CoFe/Mg/AlOx/Siデピン接合を用いた低バリア強磁性ソース/ドレインMOSFET},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100640966,
author = {高村陽太 and 林建吾 and 影井泰次郎 and 周藤悠介 and 菅原聡},
title = {ラジカル酸窒化膜を用いたCFS/SiOxNy/Siトンネル接合の形成と構造評価},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100640874,
author = {菅原聡 and 周藤悠介 and 山本修一郎},
title = {CMOS/スピントロニクス融合技術による不揮発性ロジックシステムの展望},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100640910,
author = {T. Okishio and Y. Takamura and S. Sugahara},
title = {Low-barrier ferromagnet source/drain MOSFETs using CoFe/Mg/AlOx/Si depinning contacts},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100640909,
author = {M. Satoh and Y. Takamura and S. Sugahara},
title = {Preparation and characterization of L21-ordered full-Heusler Co2FeSi1-xAlx alloy thin films formed by rapid thermal annealing},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100640908,
author = {Y. Takamura and K. Hayashi and Y. Shuto and S. Sugahara},
title = {Formation and structural analysis of half-metallic Co2FeSi/SiOxNy/Si contacts with radical-oxynitridation-SiOxNy tunnel barrier},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100640907,
author = {Y. Takamura and S. Sugahara},
title = {Analysis and design of Hanle-effect spin-transistor},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100640906,
author = {S. Yamamoto and Y. Shuto and S. Sugahara},
title = {Nonvolatile power-gating FPGAs based on spin-transistor architecture},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100640905,
author = {Y. Shuto and S. Yamamoto and S. Sugahara},
title = {Nonvolatile SRAM based on spin-transistor architecture for nonvolatile power-gating systems},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100640978,
author = {Y. Takamura and S. Sugahara},
title = {Analysis of the Hanle effect in Si MOS inversion channels at 300K},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100629976,
author = {山本修一郎 and 菅原聡},
title = {抵抗変化素子を用いたばらつき補償CMOSゲート},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100627855,
author = {高村陽太 and 菅原聡},
title = {スピンMOSFET におけるHanle 効果の解析},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100640912,
author = {T. Okishio and Y. Takamura and S. Sugahara},
title = {Fabrication of spin-MOSFETs using CoFe/Mg/AlOx/Si tunnel junctions for the source and drain},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100627851,
author = {髙村 陽太 and 林 建吾 and 周藤 悠介 and 菅原 聡},
title = {ラジカル酸窒化法を用いたCo2FeSi/SiOxNy/Siトンネル接合の形成},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100629897,
author = {SATOSHI SUGAHARA},
title = {Spin-functional MOSFETs: Material, device, and circuit technologies},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100640969,
author = {周藤悠介 and 山本修一郎 and 菅原聡},
title = {擬似スピンMOSFETを用いた不揮発性SRAM：スリープ時リーク電流削減効果},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100640975,
author = {置塩貴雄 and 高村陽太 and 菅原聡},
title = {CoFe/Mg/AlOx/Siトンネル構造をソース/ドレインに用いたスピンMOSFETの作製},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100640875,
author = {菅原聡},
title = {スピン機能MOSFET技術の展開},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100640913,
author = {M. Satoh and Y. Takamura and S. Sugahara},
title = {Characterization of L21-ordered full-Heusler Co2FeSi1-xAlx alloy thin films formed by silicidation technique employing a silicon-on-insulator substrate},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100640914,
author = {Y. Takamura and K. Hayashi and Y. Shuto and S. Sugahara},
title = {Formation of half-metallic tunnel junctions of Co2FeSi/SiOxNy/Si using radical oxynitridation technique},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100640915,
author = {Y. Shuto and S. Yamamoto and S. Sugahara},
title = {Evaluation and control of break-even time for nonvolatile SRAM using pseudo-spin-MOSFETs wit spin-transfer-torque MTJs},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100640917,
author = {S. Yamamoto and Y. Shuto and S. Sugahara},
title = {Power-gating ability and power aware design of nonvolatile delay flip-flop using spin-transistor architecture with spin transfer torque MTJs},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100640916,
author = {S. Yamamoto and Y. Shuto and S. Sugahara},
title = {Application of NV-DFF and NV-SRAM using spin-transistor Architecture with spin transfer torque MTJs to nonvolatile power-gating FPGA},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100640977,
author = {林建吾 and 高村陽太 and 周藤悠介 and 菅原聡},
title = {RTA法を用いたCo2FeSiの形成における初期多層膜構造の影響},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100640877,
author = {菅原聡},
title = {スピントランジスタ・エレクトロニクス -不揮発性ロジックに基づく低消費電力集積回路の基盤技術-},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100619525,
author = {佐藤 充浩 and 髙村 陽太 and 菅原 聡},
title = {RTAを用いたフルホイスラー合金Co2FeSi1-xAlxの形成と評価(2)},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100629239,
author = {菅原聡},
title = {スピントランジスタ・エレクトロニクス -不揮発性ロジックに基づく低消費電力集積回路の基盤技術-},
booktitle = {2011年春季 第58回応用物理学関係連合講演会},
year = 2011,
}
@inproceedings{CTT100640878,
author = {Y. Shuto and Y. Takamura and S. Sugahara},
title = {Spin-functional MOSFETs based on half-metallic ferromagnet technology},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100619519,
author = {Y. Takamura and T. Sakurai and R. Nakane and Y. Shuto and S. Sugahara},
title = {Comparative study of full-Heusler Co2FeSi and Co2FeGe alloy thin films formed by rapid thermal annealing},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100619516,
author = {Y. Shuto and Y. Takamura and S. Sugahara},
title = {Numerical simulation analysis of nonlocal multi-terminal devices for spin current detection in semiconductors},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100629970,
author = {山本修一郎 and 周藤悠介 and 菅原聡},
title = {擬似スピンMOSFETを用いた不揮発性SRAMと不揮発性DFFのFPGA応用},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100619522,
author = {周藤悠介 and 高村陽太 and 菅原聡},
title = {非局所配置マルチターミナルデバイスの数値解析シミュレーション},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100619523,
author = {櫻井 卓也 and 高村 陽太 and 中根 了昌 and 周藤 悠介 and 菅原 聡},
title = {RTAによるフルホイスラー合金Co2FeGe薄膜のエピタキシャル形成},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100629967,
author = {周藤悠介 and 山本修一郎 and 菅原聡},
title = {擬似スピンMOSFETを用いた不揮発性SRAM：ストア時の書き込み電流制御},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100629841,
author = {菅原聡},
title = {スピン機能MOSFETとその集積エレクトロニクスへの応用},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100629843,
author = {菅原聡 and 周藤悠介 and 山本修一郎},
title = {不揮発性メモリ素子を用いた不揮発性/ばらつき補償SRAM技術},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100629971,
author = {山本修一郎 and 周藤悠介 and 菅原聡},
title = {擬似スピンMOSFETを用いた不揮発性DFF：静的リーク電流とBETの削減},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100629969,
author = {周藤悠介 and 山本修一郎 and 菅原聡},
title = {擬似スピンMOSFETを用いた不揮発性SRAM：セルリーク電流とBETの削減},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100629985,
author = {Y. Shuto and R. Nakane and W. H. Wang and H. Sukegawa and S. Yamamoto and M. Tanaka and K. Inomata and S. Sugahara},
title = {A new spin-functional MOSFET based on MTJ technology: Pseudo-spin-MOSFET},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100629849,
author = {SATOSHI SUGAHARA},
title = {Spin-functional MOSFETs: CMOS/spintronics hybrid technology},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100629904,
author = {Y. Shuto and S. Yamamoto and S. Sugahara},
title = {Operating analysis of nonvolatile SRAM using pseudo-spin-MOSFETs},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100619521,
author = {Y. Takamura and R. Nakane and S. Sugahara},
title = {Disordered structures in full-Heusler Co2FeSi alloy thin films formed by rapid thermal annealing},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100619520,
author = {T. Sakurai and Y. Takamura and R. Nakane and Y. Shuto and S. Sugahara},
title = {Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films by rapid thermal annealing},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100629981,
author = {佐藤充浩 and 高村陽太 and 菅原聡},
title = {RTAを用いたフルホイスラー合金Co2FeAlxSi1-xの形成と評価},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100629972,
author = {周藤悠介 and 中根了昌 and Wenhong Wang and 介川裕章 and 山本修一郎 and 田中雅明 and 猪俣浩一郎 and 菅原 聡},
title = {擬似スピンMOSFETの作製と評価},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100629980,
author = {山本修一郎 and 菅原聡},
title = {抵抗変化素子を用いたばらつき補償CMOSゲート},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100629978,
author = {林建吾 and 高村陽太 and 中根了昌 and 菅原聡},
title = {Co2FeSi/SiOxNy/Siトンネル接合の形成とその構造評価},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100629963,
author = {Y. Shuto and S. Yamamoto and S. Sugahara},
title = {Operating analysis of nonvolatile SRAM using pseudo-spin-MOSFETs},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100629905,
author = {Y. Takamura and S. Sugahara},
title = {X-ray diffraction study for atomic disorder in full-Heulser alloy thin films using Co x-ray source},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100629960,
author = {S Yamamoto and Satoshi Sugahara},
title = {Nonvolatile delay flip-flop using pseudo-spin-MOSFETs and its power-gating applications},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100605324,
author = {菅原聡},
title = {スピン機能MOSFETとその集積回路応用},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100605436,
author = {Y. Shuto and R. Nakane and H. Sukegawa and S. Yamamoto and M. Tanaka and K. Inomata and S. Sugahara},
title = {Fabrication and characterization of pseudo-spin-MOSFETs},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100605335,
author = {S. Sugahara},
title = {Spin-functional MOSFETs},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100605410,
author = {S. Yamamoto and Yusuke Shuto and Satoshi Sugahara},
title = {Nonvolatile power-gating microprocessor concepts using nonvolatile SRAM and flip-flop},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100605407,
author = {Y. Takamura and S. Sugahara},
title = {Half-metallic ferromagnet technologies for spin-functional MOSFETs},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100605406,
author = {Y. Shuto and S. Yamamoto and S. Sugahara},
title = {Analysis and design of nonvolatile SRAM using spintronics technology},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100605358,
author = {山本修一郎 and 菅原聡 and 前島英雄},
title = {マイクロプロセッサにおけるエマージングメモリデバイスへの期待},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100605352,
author = {周藤悠介 and 山本修一郎 and 菅原聡},
title = {Spin-RAM/ReRAM技術を用いた機能MOSFETとその不揮発性SRAM/フリップフロップへの応用},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100605336,
author = {菅原聡},
title = {エマージングメモリデバイスとCMOSの機能融合による新しいコンピュータアーキテクチャの基礎：イントロダクトリートーク},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100605422,
author = {Sanjeewa Dissanayake and 富山健太郎 and 周藤悠介 and 菅原聡 and 竹中充 and 高木信一},
title = {超薄膜(110)面GOI p型MOSFETの電気的特性},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100605421,
author = {山本修一郎 and 菅原聡},
title = {擬似スピンMOSFETを用いた不揮発性DFF：バルーンDFFとの比較},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100605420,
author = {周藤悠介 and 山本修一郎 and 菅原聡},
title = {擬似スピンMOSFETを用いた不揮発性SRAM：電源遮断動作消費電力の評価},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100605419,
author = {高村陽太 and 菅原聡},
title = {Co線源X線回折を用いたフルホイスラー合金の不規則構造評価法の提案},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100605412,
author = {Shuu’ichirou.Yamamoto and Yusuke Shuto and Satoshi Sugahara},
title = {Nonvolatile SRAM(NV-SRAM) Using Functional MOSFET Merged with Resistive Switching Devices},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100605367,
author = {菅原聡},
title = {スピントランジスタによる新しいエレクトロニクスの展開},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100583511,
author = {SATOSHI SUGAHARA},
title = {Nonvolatile Logic Technologies for Green IT},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100605418,
author = {Y. Shuto and S. Yamamoto and S. Sugahara},
title = {Analysis and Design of Nonvolatile SRAM Using MOSFET-Based Spin-Transistors},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100605414,
author = {Shuu’ichirou Yamamoto and Satoshi Sugahara},
title = {Nonvolatile delay flip-flop using magnetic tunnel junctions with current-induced magnetization switching architecture},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100605413,
author = {K. Hayashi and Y. Takamura and R. Nakane and S. Sugahara},
title = {Preparation and characterization of full-Heusler Co2FeSi alloy thin films on amorphous insulator films},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100605368,
author = {S. Sugahara and Y. Takamura},
title = {SOI-Based Spin-Transistor Technologies},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100575383,
author = {山本修一郎 and 菅原聡},
title = {スピン注入磁化反転MTJを用いた不揮発性Dフリップフロップ},
booktitle = {第56回応用物理学関係連合講演会予稿集},
year = 2009,
}
@inproceedings{CTT100583576,
author = {山本修一郎 and 菅原聡},
title = {ノンポーラ型抵抗変化素子のSPICEモデル},
booktitle = {第56回応用物理学関連連合講演会予稿集},
year = 2009,
}
@inproceedings{CTT100583514,
author = {菅原聡},
title = {スピン機能MOSFETによる新しいエレクトロニクスの展開},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100583575,
author = {菅原聡 and 周藤悠介 and 山本修一郎},
title = {抵抗変化素子を用いたFunctional MOSFET/CMOS},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100583577,
author = {竹中充 and 田辺聡 and S. Dissanayake and 菅原聡 and 高木信一},
title = {酸化濃縮法を用いたGe PDとGe-on-Insulator MOSFETの集積化の検討},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100583566,
author = {高村陽太 and 中根了昌 and 周藤悠介 and 菅原聡},
title = {不純物偏析技術を用いたCo2FeSiソース/ドレインMOSFETの作製と評価},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100583568,
author = {周藤悠介 and 山本修一郎 and 菅原聡},
title = {Pseudo-spin-MOSFETを用いた不揮発性SRAM：情報ストア動作解析},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100583570,
author = {林建吾 and 高村陽太 and 中根了昌 and 菅原聡},
title = {極薄絶縁膜上へのフルホイスラー合金Co2FeSiの形成とその評価},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100583572,
author = {山本修一郎 and 周藤悠介 and 菅原聡},
title = {ノンポーラ型抵抗変化素子を用いた不揮発性SRAM},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100583580,
author = {林建吾 and 高村陽太 and 中根了昌 and 菅原聡},
title = {非晶質絶縁膜上へのフルホイスラー合金Co2FeSiの形成と評価},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100583578,
author = {周藤悠介 and 山本修一郎 and 菅原聡},
title = {擬似スピンMOSFETを用いた不揮発性SRAMの提案と解析},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100605405,
author = {Y. Shuto and S. Yamamoto and S. Sugahara},
title = {Variability-Tolerant CMOS Gates Using Functional MOSFETs with Resistive Switching Devices},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100583558,
author = {S. Yamamoto and S. Sugahara},
title = {Analysis and design of nonvolatile SRAM using magnetic tunnel junctions with current-induced magnetization switching technology},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100583552,
author = {Y. Takamura and R. Nakane and S. Sugahara},
title = {Analysis of L21-ordering in full-Heusler Co2FeSi alloy thin films formed by rapid thermal annealing},
booktitle = {53rd Annual Conference on Magnetism and Magnetic Materials (MMM2008)},
year = 2008,
}
@inproceedings{CTT100583556,
author = {Y. Shuto and S. Yamamoto and S. Sugahara},
title = {Novel nonvolatile SRAM architecture using MOSFET-based spin-transistors},
booktitle = {53rd Annual Conference on Magnetism and Magnetic Materials (MMM2008)},
year = 2008,
}
@inproceedings{CTT100583559,
author = {Y. Takamura and Y. Nagahama and A. Nishijima and R. Nakane and S. Sugahara},
title = {Formation of Si- and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors},
booktitle = {Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME2008)},
year = 2008,
}
@inproceedings{CTT100575381,
author = {菅原聡 and 周藤悠介 and 山本修一郎},
title = {スピン機能MOSFETを用いた不揮発性高機能・高性能ロジック},
booktitle = {応用電子物性分科会誌},
year = 2008,
}
@inproceedings{CTT100583562,
author = {Y. Shuto and M. Tanaka and S. Sugahara},
title = {Germanium-based ferromagnetic semiconductor Ge1-xFex for silicon spintronics},
booktitle = {Pacific Rim Meeting on Electrochemical and Solid-state Science (PRiME2008)},
year = 2008,
}
@inproceedings{CTT100583515,
author = {菅原聡 and 周藤悠介 and 山本修一郎},
title = {スピン機能MOSFETによるスピントランジスタ・エレクトロニクス},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100583593,
author = {Sanjeewa Dissanayake and 周藤悠介 and 菅原聡 and 竹中充 and 高木信一},
title = {化濃縮法で作成された超薄膜(110)面GOIp-MOSFETの電気的特性},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100669709,
author = {林健吾 and 高村陽太 and 中根了昌 and 菅原聡},
title = {非晶質絶縁膜上に形成したフルホイスラー合金Co2FeSiの結晶構造評価},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100572686,
author = {Y. Gyoda and J. Hayafuji and M. Yarimizu and W. Terui and S. Sugahara and H. Munekata},
title = {Spin transport across indirect gap barriers in GaAs-AlGaAs heterostructures},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100589213,
author = {S.Sugahara},
title = {Spin-Transistor Electronics with Spin-MOSFETs},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100575379,
author = {山本修一郎 and 菅原聡},
title = {スピン注入磁化反転MTJを用いた不揮発性SRAM：通常動作時消費電力の削減},
booktitle = {第69回応用物理学会学術講演会予稿集},
year = 2008,
}
@inproceedings{CTT100589214,
author = {周藤悠介 and 山本修一郎 and 菅原聡},
title = {Pseudo-spin-MOSFETを用いた不揮発性SRAM：消費電力削減の効果},
booktitle = {第69回応用物理学会学術講演会予稿集},
year = 2008,
}
@inproceedings{CTT100583521,
author = {中根了昌 and 原田智之 and 杉浦邦晃 and 菅原聡 and 田中雅明},
title = {シリコンMOS反転層へのスピン注入とスピンMOSFETへの応用},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100583517,
author = {菅原 聡 and 高村 陽太 and 中根 了昌 and 周藤悠介 and 山本 修一郎},
title = {スピンMOSFET を用いたスピントランジスタ・エレクトロニクス},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100583585,
author = {髙村陽太 and 中根了昌 and 菅原聡},
title = {RTAによって作製したフルホイスラー合金Co2FeSiの規則度},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100572671,
author = {H. Munekata and J. Hayafuji and Y. Gyoda and M. Yarimizu and W. Terui and S. Sugahara},
title = {Spin transport across depletion region and energy barriers in GaAs-AlGaAs heterostructures},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100564128,
author = {Sanjeewa Dissanayake and 熊谷寛 and 周藤悠介 and 菅原聡 and 高木信一},
title = {酸化濃縮法による(110)面超薄膜GOIpMOSFETデバイス作製},
booktitle = {第68回応用物理学会学術講演会},
year = 2008,
}
@inproceedings{CTT100589210,
author = {Y. Takamura and A. Nishijima and Y. Nagahama and R. Nakane and S. Sugahara},
title = {Fabrication Technique of Si- and Ge-based Full-Heusler Alloys for Half-metallic Source/Drain Spin MOSFETs},
booktitle = {The 4th Intl. Nanotechnology Conf. on Communication and Cooperation (INC4)},
year = 2008,
}
@inproceedings{CTT100572745,
author = {行田 裕一 and 早藤 潤人 and 鑓水 将志 and 照井 亘瑠 and 菅原 聡 and 宗片 比呂夫},
title = {間接遷移型の障壁層を含むAlGaAs-GaAsヘテロ構造におけるスピン輸送},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100589206,
author = {Y. Shuto and M. Tanaka and S. Sugahara},
title = {Epitaxial growth and characterization of Germanium-based ferromagnetic semiconductor thin films for silicon spintronics},
booktitle = {The forth Intl. Nanotechnology Conf. on Communication and Cooperation (INC4)},
year = 2008,
}
@inproceedings{CTT100583595,
author = {山本修一郎 and 菅原聡},
title = {スピン注入磁化反転MTJを用いた不揮発性SRAM：仮想接地セルアーキテクチャ},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100583597,
author = {山本修一郎 and 菅原聡},
title = {スピン注入磁化反転MTJを用いた不揮発性SRAM：Vhalfの影響},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100583602,
author = {田辺聡 and 中北要佑 and 原田智之 and Sanjeewa Dissanayake and 中根了昌 and 竹中充 and 菅原聡 and 高木信一},
title = {GOI pMOSFETの正孔反転層における移動度の評価},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100583601,
author = {森井清仁 and Sanjeewa Dissanayake and 田辺聡 and 中根了昌 and 竹中充 and 菅原聡 and 高木信一},
title = {メタルソース・ドレインnチャネルGOI MOSFETのチャネル電子移動度測定},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100583600,
author = {遠藤裕幸 and 周藤悠介 and 田中雅明 and 菅原聡},
title = {強磁性半導体Ge1-xFex薄膜におけるアニール効果},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100583598,
author = {高村陽太 and 長浜陽平 and 西島輝 and 中根了昌 and 宗片比呂夫 and 菅原聡},
title = {RTAを用いて作製したフルホイスラー合金Co2FeSi、Co2FeGeの構造},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100553217,
author = {菅原聡 and 山本修一郎},
title = {スピン注入磁化反転MTJを用いたpseudo-spin-MOSFETの動作解析},
booktitle = {第55回応用物理学関係連合講演会},
year = 2008,
}
@inproceedings{CTT100564122,
author = {菅原聡},
title = {スピン機能MOSFETとその高機能ロジックへの展開－電荷とスピンの融合による新しい高性能・高機能集積回路技術－},
booktitle = {JST Innovation Bridge},
year = 2008,
}
@inproceedings{CTT100564121,
author = {菅原聡},
title = {スピンMOSFETとその高機能ロジックへの応用},
booktitle = {STRJワークショップ2007},
year = 2008,
}
@inproceedings{CTT100669710,
author = {高村陽太 and 西島輝 and 長浜陽平 and 中根了昌 and 宗片比呂夫 and 菅原聡},
title = {Rapid Thermal Annealingを用いたフルホイスラー合金の作製と評価},
booktitle = {},
year = 2007,
}
@inproceedings{CTT100564112,
author = {S. Dissanayake and S. Tanabe and S. Sugahara and M. Takenaka and S. Takagi},
title = {Effect of Annealing on (100) and (110) Oriented pseudo-GOI pMOSFETs Fabricated by Ge Condensation Method},
booktitle = {The 5th Intl. Symp. on Control of Semiconductor Interfaces -for Next Generation ULSI Process Integrations- (ISCSI-V)},
year = 2007,
}
@inproceedings{CTT100564111,
author = {S. Takagi and H. Matsubara and M. Nishikawa and T. Sasada and R. Nakane and S. Sugahara and M. Takenaka},
title = {Superior MOS Interface Properties of GeO2/Ge Structures Fabricated by Ozone Oxidation},
booktitle = {The 5th Intl. Symp. on Control of Semiconductor Interfaces -for Next Generation ULSI Process Integrations- (ISCSI-V)},
year = 2007,
}
@inproceedings{CTT100564110,
author = {Y.Shuto and M.Tanaka and S.Sugahara},
title = {Crystallographic and magnetic properties of epitaxially grown Ge1-xFex thin films on Si(001) substrates},
booktitle = {52nd Annual Conf. on Magnetism and Magnetic Materials (MMM2007)},
year = 2007,
}
@inproceedings{CTT100559711,
author = {Y. Takamura and R. Nakane and H. Munekata and S. Sugahara},
title = {Preparation of full-Heusler alloys on silicon-on-insulator substrates employing rapid thermal annealing},
booktitle = {},
year = 2007,
}
@inproceedings{CTT100553202,
author = {S. Yamamoto and S. Sugahara},
title = {Nonvolatile SRAM and flip-flop architectures using magnetic tunnel junctions with current-induced magnetization switching technology},
booktitle = {52nd Annual Conf. on Magnetism and Magnetic Materials},
year = 2007,
}
@inproceedings{CTT100564109,
author = {S. Takagi and T. Uehara and S. Tanabe and H. Matsubara and R. Nakane and M. Takenaka and S. Sugahara},
title = {Effects of Atomic Hydrogen Annealing on Reduction of Leakage Current in Ultrathin Si/Ge/Si-On-Insulator Metal Source/Drain p-Channel MOSFETs},
booktitle = {34th International Symposium on Compound Semiconductors (ISCS2007)},
year = 2007,
}
@inproceedings{CTT100553210,
author = {山本修一郎 and 菅原聡},
title = {pseudo spin-MOSFET/spin-MOSFETの不揮発性SRAM/ラッチ回路への応用},
booktitle = {第68回応用物理学会学術講演会講演予稿集},
year = 2007,
}
@inproceedings{CTT100553208,
author = {山本修一郎 and 菅原聡},
title = {強磁性トンネル接合を用いたpseudo spin-MOSFETの提案と理論解析},
booktitle = {第68回応用物理学会学術講演会講演予稿集},
year = 2007,
}
@inproceedings{CTT100553212,
author = {山本修一郎 and 菅原聡},
title = {スピン注入磁化反転MTJを用いた不揮発性SRAM/ラッチ回路},
booktitle = {第68回応用物理学会学術講演会},
year = 2007,
}
@inproceedings{CTT100564118,
author = {菅原聡},
title = {Si(001),Si(110),Si(111)基板上へのMnドープGe薄膜のエピタキシャル成長と磁性},
booktitle = {第68回応用物理学会学術講演会},
year = 2007,
}
@inproceedings{CTT100564117,
author = {周藤悠介 and 田中雅明 and 菅原聡},
title = {Si(001)基板上にエピタキシャル成長した強磁性半導体Ge1-xFex薄膜の結晶性と磁性},
booktitle = {第68回応用物理学会学術講演会},
year = 2007,
}
@inproceedings{CTT100564116,
author = {星井拓也 and 出浦桃子 and 杉山正和 and 中根了昌 and 菅原聡 and 竹中充 and 中野義昭 and 高木信一},
title = {微小孔を介したSi 基板上InGaAs 成長におけるモフォロジー向上},
booktitle = {第68回応用物理学会学術講演会},
year = 2007,
}
@inproceedings{CTT100564115,
author = {Sanjeewa Dissanayake and 周藤悠介 and 菅原聡 and 竹中充 and 高木信一},
title = {酸化濃縮法で作成された(110)面GOI基板ヘのアニール効果},
booktitle = {第68回応用物理学会学術講演会},
year = 2007,
}
@inproceedings{CTT100548143,
author = {高村陽太 and 長浜陽平 and 中根了昌 and 宗片比呂夫 and 菅原聡},
title = {RTAを用いた非晶質絶縁膜上へのホイスラー合金の形成とその評価},
booktitle = {第68回応用物理学会学術講演会},
year = 2007,
}
@inproceedings{CTT100548144,
author = {高村陽太 and 西島輝 and 中根了昌 and 宗片比呂夫 and 菅原聡},
title = {Germanium-on-insulator (GOI)基板を用いたホイスラー合金の作製とその評価},
booktitle = {第68回応用物理学会学術講演会},
year = 2007,
}
@inproceedings{CTT100564120,
author = {菅原聡},
title = {シリコン・スピンエレクトロニクス ～材料・デバイス・回路～},
booktitle = {日本半導体製造装置協会(SEAJ)講演会},
year = 2007,
}
@inproceedings{CTT100564119,
author = {中根了昌 and 田中雅明 and 菅原聡},
title = {Siキャップ層による強磁性Fe3Si薄膜形成温度の低温化},
booktitle = {第68回応用物理学会学術講演会},
year = 2007,
}
@inproceedings{CTT100562686,
author = {H. Nose and S. Sugahara and H.Munekata},
title = {Dependence of Layer Thickness on Magnetism and Electrical Conduction in Ferromagnetic (In,Mn)As/GaSb Heterostructures},
booktitle = {Narrow Gap Semiconductors 2007},
year = 2007,
}
@inproceedings{CTT100534568,
author = {菅原聡},
title = {シリコン・スピンエレクトロニクス -材料・デバイス・回路-},
booktitle = {応用物理学会シリサイド系半導体と関連物質研究会},
year = 2007,
}
@inproceedings{CTT100534521,
author = {S.Yada and M.Tanaka and S.Sugahara},
title = {Structural and Magnetic Properties of Self-Organized Ge1-xMnx Nanocolumns in Epitaxially Grown Mn-Doped Ge Thin Films},
booktitle = {4th Intl. School and Conference on Spintronics and Quantum Information Technology (Spintech IV)},
year = 2007,
}
@inproceedings{CTT100534528,
author = {S.Takagi and T.Maeda and N.Taoka and M.Nishizawa and Y.Morita and K.Ikeda and Y.Yamashita and M.Nishikawa and H.Kumagai and R.Nakane and S.Sugahara and N.Sugiyama},
title = {Gate Dielectric Formation and MIS Interface Characterization on Ge},
booktitle = {The 15th Biennial Conf. on Insulatring Films on Semiconductors (INFOS2007)},
year = 2007,
}
@inproceedings{CTT100534519,
author = {Y.Shuto and M.Tanaka and S.Sugahara},
title = {Magneto-Optical and Magneto-Transport Properties of Ferromagnetic Ge1-xFex Thin Films Grown on Si (001) Substrates},
booktitle = {4th Intl. School and Conference on Spintronics and Quantum Information Technology (Spintech IV)},
year = 2007,
}
@inproceedings{CTT100534523,
author = {S.Dissanayake and H.Kumagai and T.Uehara and Y.Shuto and S.Sugahara and S.Takagi},
title = {(110) Ultra-thin GOI p-MOSFETs Fabricated by Ge Condensation Method},
booktitle = {The 5th International Conference on SiGe(C) Epitaxy and Heterostructures (ICSI-5)},
year = 2007,
}
@inproceedings{CTT100809879,
author = {Hoshii Takuya and SATOSHI SUGAHARA and Takagi Shin-ichi},
title = {Effect of tensile strain on gate current of strained-Si n-channel metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)},
booktitle = {Japanese journal of applied physics Pt. 1 Regular papers, brief communications & review papers},
year = 2007,
}
@inproceedings{CTT100534524,
author = {S.Sugahara},
title = {Perspective on Spin-Transistor Electronics},
booktitle = {The 2007 International Meeting for Future of Electron Devices Kansai},
year = 2007,
}
@inproceedings{CTT100534526,
author = {S.Sugahara},
title = {Perspective on Si-Based Spin-Transistor Electronics},
booktitle = {3rd Intl. Nanotechnology Conf. on Communication and Cooperation (INC3)},
year = 2007,
}
@inproceedings{CTT100534114,
author = {星井拓也 and 出浦桃子 and 七条真人 and 杉山正和 and 菅原聡 and 中野義昭 and 高木信一},
title = {Si基板上へのInGaAsの成長におけるInPバッファーの有効性},
booktitle = {第54回応用物理学関係連合講演会},
year = 2007,
}
@inproceedings{CTT100534110,
author = {出浦桃子 and 杉山正和 and 星井拓也 and 菅原聡 and 高木信一 and 中野義昭},
title = {Si上高品質III/V族化合物半導体薄膜形成に向けたMOVPEバッファ層の初期成長過程観察},
booktitle = {第54回応用物理学関係連合講演会},
year = 2007,
}
@inproceedings{CTT100534579,
author = {Sanjeewa Dissanayake and 熊谷寛 and 周藤悠介 and 菅原聡 and 高木信一},
title = {酸化濃縮法により作製された超薄膜(110)面GOI p-MOSFET},
booktitle = {第54回応用物理学関係連合講演会},
year = 2007,
}
@inproceedings{CTT100534106,
author = {上原貴志 and 田辺聡 and 松原寛 and 中根了昌 and 菅原聡 and 高木信一},
title = {原子状水素アニールによるSi/Ge/SOI構造メタルS/D pMOSFETの特性改善},
booktitle = {第54回応用物理学関係連合講演会},
year = 2007,
}
@inproceedings{CTT100534578,
author = {松原寛 and 熊谷寛 and 菅原聡 and 高木信一},
title = {低温コンダクタンス法によるSiO2/Ge MIS界面準位の特性評価},
booktitle = {第54回応用物理学関係連合講演会},
year = 2007,
}
@inproceedings{CTT100534581,
author = {田辺聡 and 上原貴志 and 中根了昌 and 菅原聡 and 高木信一},
title = {GOI(Ge-On-Insulater)MOSチャネル中の正孔の速度-電界特性},
booktitle = {第54回応用物理学関係連合講演会},
year = 2007,
}
@inproceedings{CTT100534583,
author = {高木信一 and 杉山正和 and 菅原聡},
title = {III-V族化合物半導体n-MOSFETとSi・Ge n-MOSFETの電流駆動力の比較},
booktitle = {第54回応用物理学関係連合講演会},
year = 2007,
}
@inproceedings{CTT100563968,
author = {高村陽太 and 中根了昌 and 宗片比呂夫 and 菅原聡},
title = {Silicon-on-insulator (SOI) 基板を用いたホイスラー合金の作製とその磁性評価},
booktitle = {第54回応用物理学関係連合講演会},
year = 2007,
}
@inproceedings{CTT100534570,
author = {中根了昌 and 杉浦邦晃 and 田中雅明 and 菅原聡},
title = {シリコン中へのスピン注入とデバイス応用},
booktitle = {第54回応用物理学関係連合講演会},
year = 2007,
}
@inproceedings{CTT100534573,
author = {周藤悠介 and 田中雅明 and 菅原聡},
title = {Si(001)基板上への強磁性半導体Ge1-xFex薄膜のMBE成長と評価},
booktitle = {第54回応用物理学関係連合講演会},
year = 2007,
}
@inproceedings{CTT100534574,
author = {矢田慎介 and 田中雅明 and 菅原聡},
title = {エピタキシャル成長した強磁性Ge1-xMnx薄膜の構造と磁性の評価},
booktitle = {第54回応用物理学関係連合講演会},
year = 2007,
}
@inproceedings{CTT100534575,
author = {熊谷寛 and 七条真人 and 松原寛 and 菅原聡 and 内田恭敬 and 高木信一},
title = {Ge上極薄Siのプラズマ酸化によるSiO2/Ge MISキャパシタの電気特性},
booktitle = {第54回応用物理学関係連合講演会},
year = 2007,
}
@inproceedings{CTT100534576,
author = {西川昌志 and 熊谷寛 and 菅原聡 and 高木信一},
title = {オゾン酸化及び熱酸化により作製されたGe酸化膜/Ge MOS構造の電気特性},
booktitle = {第54回応用物理学関係連合講演会},
year = 2007,
}
@inproceedings{CTT100534486,
author = {Y.Shuto and M.Tanaka and S.Sugahara},
title = {Epitaxial Growth and Properties of Ferromagnetic Ge1-xFex Thin Films on Si (001)},
booktitle = {10th Joint MMM/Intermag Conference},
year = 2007,
}
@inproceedings{CTT100534485,
author = {S.Yada and M.Tanaka and S.Sugahara},
title = {Kinetically-Controlled Epitaxial Growth of Ferromagnetic Ge1-xMnx Thin Films},
booktitle = {10th Joint MMM/Intermag Conference},
year = 2007,
}
@inproceedings{CTT100534489,
author = {M.Shichijo and R.Nakane and S.Sugahara and S.Takagi},
title = {Fabrication of III-V-O-I(III-V on Insulator) Structures on Si Using Micro-Channel Epitaxy with a Two-Step Growth Technique},
booktitle = {2006 Intl. Conf. on Solid State Devices and Materials (SSDM 2006)},
year = 2006,
}
@inproceedings{CTT100672466,
author = {田中雅明 and ファム ナム ハイ and 横山正史 and 大矢忍 and 菅原聡},
title = {III-V族ベース・エピタキシャル強磁性トンネル接合とトンネル磁気抵抗効果},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100672470,
author = {田中 雅明 and 周藤 悠介 and 矢田 慎介 and 杉浦 邦晃 and ファム ナム ハイ and 横山 正史 and 大矢 忍 and 中根 了昌 and 菅原 聡},
title = {半導体スピントロニクス・ヘテロ構造電子デバイスの研究},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100534656,
author = {周藤悠介 and 田中雅明 and 菅原聡},
title = {エピタキシャル強磁性半導体Ge1-xFeｘ薄膜の結晶性および磁性},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100534643,
author = {周藤悠介 and 田中雅明 and 菅原聡},
title = {強磁性半導体Ge1-xFexにおける結晶構造と強磁性との相関},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100534642,
author = {矢田慎介 and 田中雅明 and 菅原聡},
title = {Ge1-xMnx薄膜の成長速度制御による相分離抑止エピタキシャル成長とその磁性},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100534640,
author = {Sanjeewa Dissanayake and 熊谷寛 and 菅原聡 and 高木信一},
title = {(110)面SiGe/SOI構造の酸化濃縮による(110)GOI基板の作製},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100534605,
author = {周藤悠介 and 田中雅明 and 菅原聡},
title = {GeおよびSi基板上への強磁性半導体Ge1-xFex薄膜のエピタキシャル成長},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100534603,
author = {菅原聡},
title = {スピントランジスタ},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100534681,
author = {熊谷寛 and 七条真人 and 石川寛人 and 星井拓也 and 菅原聡 and 高木信一},
title = {Ge上極薄膜Siのプラズマ酸化によるSiO2/Ge MISキャパシタの作製と界面特性評価},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100534680,
author = {上原貴志 and 菅原聡 and 高木信一},
title = {低温MBE成長を用いた超薄膜Ge-on-insulator (GOI) p-channel メタルS/D MOSFET},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100534678,
author = {菅原聡 and 中根了昌 and 高木信一},
title = {オーミックコンタクト合金を用いたメタル・ソース/ドレインMOSFET},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100534675,
author = {高木信一 and 菅原聡},
title = {III-V族化合物半導体n-MOSFETの電気特性の比較},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100534671,
author = {七条真人 and 菅原聡 and 高木信一},
title = {III-V on insulator (III-V-OI)MOSFET応用に向けたSi基板上のIII-V族化合物半導体エピタキシャル成長法},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100534658,
author = {中根了昌 and 田中雅明 and 菅原聡},
title = {Silicon-on-snsulator (SOI) 基板上の強磁性Fe1-xSiｘ薄膜の磁性と構造評価},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100534645,
author = {田中雅明 and 中根了昌 and 杉浦邦晃 and 周藤悠介 and 矢田慎介 and 菅原聡},
title = {IV族ベース・スピントロニクスデバイスと再構成可能な論理回路},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100534518,
author = {Y.Shuto and M.Tanaka and S.Sugahara},
title = {Structural and Magnetic Properties of Ferromagnetic Semiconductor Ge1-xFex Thin Films Grown by LT-MBE},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100534516,
author = {S.Yada and M.Tanaka and S.Sugahara},
title = {Ferromagnetism in Mn-Doped Amorphous Ge Thin Films},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100534514,
author = {S.Sugahara},
title = {Spin MOSFETs As a Basis for Silicon-Based Spin-Electronics},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100534513,
author = {Y.Shuto and M.Tanaka and S.Sugahara},
title = {Ferromagnetism in Epitaxially Grown Fe-Doped Ge Thin Films on Ge(001) Substrates},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100534492,
author = {H.Kumagai and M.Shichijo and H.Ishikawa and T.Hoshii and S.Sugahara and Y.Uchida and S.Takagi},
title = {Fabrication of SiO2/Ge MIS Structures by Plasma Oxidation of Ultrathin Si Films Grown on Ge},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100534491,
author = {T.Hoshii and S.Sugahara and S.Takagi},
title = {Effect of Tensile Strain on Gate and Substrate Currents of Strained-Si n-MOSFETs},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100534490,
author = {T.Uehara and H.Matsubara and S.Sugahara and S.Takagi},
title = {Ultra-Thin Ge-on-Insulator(GOI) Metal S/D p-Channel MOSFETs Fabricated by Low Temperature MBE Growth},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100534116,
author = {菅原聡},
title = {スピントランジスタの研究動向},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100534487,
author = {S.Takagi and S.Sugahara},
title = {Comparative Study on Influence of Subband Structures on Electrical Characteristics of III-V Semiconductor, Ge and Si Channel n-MISFETs},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100534677,
author = {星井拓也 and 菅原聡 and 高木信一},
title = {ひずみSi MOSFETのゲート トンネル電流に与えるひずみの効果},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100672473,
author = {ファム ナム ハイ and 菅原聡 and 田中雅明},
title = {単電子スピントランジスタを用いた再構成可能な論理回路(II)},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100672451,
author = {Pham Nam Hai and Satoshi Sugahara and Masaaki Tanaka},
title = {Reconfigurable logic gates based on single electron spin transistors},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100672477,
author = {田中 雅明 and ファム ナム ハイ and 横山 正史 and 周藤 悠介 and アーサンナズムル and 大矢 忍 and 菅原 聡},
title = {半導体スピントロニクス・ヘテロ構造電子デバイスの研究},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100672480,
author = {ファム ナム ハイ and 菅原聡 and 田中雅明},
title = {GaAs:MnAs ナノクラスター/AlAs/GaAs/MnAs ヘテロ構造におけるトンネル磁気抵抗効果},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100534732,
author = {周藤悠介 and 田中雅明 and 菅原聡},
title = {Ge(100)基板上にエピタキシャル成長したMnドープGe薄膜における強磁性の起源},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100534729,
author = {菅原聡 and 杉浦邦晃 and 中根了昌 and 田中雅明},
title = {強磁性Fe1-xSixをショットキー・ソース/ドレインに用いたスピンMOSFETの作製},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100534728,
author = {熊谷寛 and 七条真人 and 石川寛人 and 星井拓也 and 菅原聡 and 高木信一},
title = {Ge上薄膜Siのプラズマ酸化によるSiO2/Ge MISキャパシタの作製と電気特性},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100534726,
author = {中根了昌 and 田中雅明 and 菅原聡},
title = {Silicon-on-snsulator (SOI) 基板を用いた強磁性Fe1-xSiｘの作製と磁気特性},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100534735,
author = {杉浦邦晃 and 中根了昌 and 菅原聡 and 田中雅明},
title = {強磁性金属-Si接合におけるショットキー障壁高さの評価},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100534723,
author = {矢田慎介 and 田中雅明 and 菅原聡},
title = {アモルファスGe1-xMnx薄膜の磁性評価},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100534722,
author = {周藤悠介 and 田中雅明 and 菅原聡},
title = {強磁性Ge1-xMnx薄膜のエピタキシャル成長と磁気特性},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100534721,
author = {菅原聡},
title = {スピン素子の現状と今後の展望},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100534719,
author = {菅原聡},
title = {スピントランジスタ},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100534737,
author = {高木信一 and 熊谷寛 and 西川昌志 and 武田浩司 and 菅原聡},
title = {Ge系MOSトランジスタへの期待},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100534739,
author = {武田浩司 and 熊谷寛 and 西川昌志 and 菅原聡 and 高木信一},
title = {ひずみSi p-MOSFETにおける反転層正孔移動度のユニバーサリティ},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100534740,
author = {熊谷寛 and 西川昌志 and 武田浩司 and 菅原聡 and 高木信一},
title = {SiN/Ge MIS キャパシタのCV特性に与える基板タイプの影響},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100534747,
author = {R.Nakane and M.Tanaka and S.Sugahara},
title = {Preparation of Ferromagnetic Silicide Fe1-xSix Using Silicon-on-Insulator Substrates for Si-Based Spin-Electronic Devices},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100534749,
author = {Y.Shuto and M.Tanaka and S.Sugahara},
title = {Epitaxial Growth and Magnetic Properties of a New Group IV Ferromagnetic Semiconductor Ge1-xFex},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100534752,
author = {S.Sugahara},
title = {MOSFET Type of Spin Transistor As a Beyond-CMOS Device Using Spin Degrees of Freedom},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100534753,
author = {S.Takagi and K.Takeda and S.Sugahara and T.Numata},
title = {Examination of the Universality of Hole Mobility in Strained-Si p-MOSFETs},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100534754,
author = {S.Yada and K. L.Lee and M.Tanaka and S.Sugahara},
title = {Ferromagnetism in Epitaxially Grown Ge1-xMnx Thin Films on Ge(001) substrates},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100534756,
author = {R.Nakane and J.Kondo and S.Sugahara and M.Tanaka},
title = {Current-Induced Magnetization Switching in Epitaxial MnAs/NiAs/MnAs Heterostructures on GaAs Substrates},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100534766,
author = {S.Sugahara},
title = {Spin MOSFETs As a Basis for Integrated Spin Electronics},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100534770,
author = {R.Nakane and M.Tanaka and S.Sugahara},
title = {Formation and Characterization of Ferromagnetic Silicide Fe1-xSix for Si-Based Spintronic Devices},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100534773,
author = {S.Sugahara and M.Tanaka},
title = {Spin MOSFETs using ferromagnetic Schottky barrier contacts for the source and drain},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100534779,
author = {S.Sugahara},
title = {Spin MOSFETs for Integrated Spin-Electronics},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100534733,
author = {周藤悠介 and 田中雅明 and 菅原聡},
title = {CrドープSi薄膜のエピタキシャル成長と磁性評価},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100600069,
author = {A. M. Nazmul and T. Amemiya and S. Sugahara and M. Tanaka},
title = {External Control of Ferromagnetism in Mn delta-doped GaAs-based Heterostructures},
booktitle = {},
year = 2004,
}
@inproceedings{CTT100600070,
author = {A. M. Nazmul and T. Amemiya and Y. Shuto and S. Sugahara and M. Tanaka},
title = {Mn delta-doped GaAs/p-AlGaAs Heterostructures with High Curie Temperature and Its Control},
booktitle = {},
year = 2004,
}
@inproceedings{CTT100600113,
author = {A. M. Nazmul and 雨宮智宏 and 周藤悠介 and 菅原 聡 and 田中雅明},
title = {Mn デルタドープGaAsをベースとした半導体へテロ構造における高温強磁性とその制御},
booktitle = {},
year = 2004,
}
@misc{CTT100542508,
author = {菅原聡},
title = {スピントランジスタ},
year = 2005,
}
@misc{CTT100886909,
author = {菅原聡},
title = {CMOS プラットフォームを用いた新技術の創成：超低消費電力 CMOS ロジックシステム，BeyondCMOS デバイス，体温を用いた熱電発電モジュール},
year = 2022,
}
@misc{CTT100873425,
author = {菅原聡},
title = {体温を用いたマイクロ熱電発電モジュール技術},
year = 2021,
}
@misc{CTT100640865,
author = {M. Tanaka and S. Ohya and Y. Shuto and S. Yada and S. Sugahara},
title = {III-V and Group-IV Based Ferromagnetic Semiconductors for Spintronics},
year = 2011,
}
@misc{CTT100640998,
author = {菅原聡 and 周藤悠介 and 山本修一郎},
title = {CMOS/スピントロニクス融合技術による不揮発性ロジックシステムの展望},
year = 2011,
}
@misc{CTT100629234,
author = {S. Sugahara and J. Nitta},
title = {Spin-Transistor Electronics: An Overview and Outlook},
year = 2010,
}
@misc{CTT100605322,
author = {菅原聡 and 周藤悠介 and 山本修一郎},
title = {スピン機能MOSFETによる不揮発性ロック 不揮発性パワーゲーティング・ロジックへの応用 不揮発性SRAM/フリップフロップの可能性を検証},
year = 2009,
}
@misc{CTT100583508,
author = {菅原聡},
title = {スピン機能MOSFETによる新しいエレクトロニクスの展開},
year = 2009,
}
@misc{CTT100605323,
author = {山本修一郎 and 周藤悠介 and 菅原聡},
title = {スピン機能CMOSによる不揮発性高機能・高性能ロジック},
year = 2009,
}
@misc{CTT100534531,
author = {M.Tanaka and S.Sugahara},
title = {MOS-Based Spin Devices for Reconfigurable Logic},
year = 2007,
}
@misc{CTT100534471,
author = {S.Takagi and T.Tezuka and T.Irisawa and S.Nakaharai and T.Numata and K.Usuda and N.Sugiyama and M.Shichijo and R.Nakane and S.Sugahara},
title = {Device Structures and Carrier Transport Properties of Advanced CMOS Using High Mobility Channels},
year = 2007,
}
@misc{CTT100534469,
author = {S.Sugahara},
title = {Perspective on Field-Effect Spin-Transistors},
year = 2006,
}
@misc{CTT100534472,
author = {S.Sugahara and M.Tanaka},
title = {Spin MOSFETs As a Basis for Spintronics},
year = 2006,
}
@misc{CTT100594570,
author = {SATOSHI SUGAHARA},
title = {Si/Ge人工結晶に関する基礎研究},
year = 1996,
}
@misc{CTT100809901,
author = {菅原聡 and 清野稔仁 and 千脇那菜},
title = {熱電変換装置},
howpublished = {登録特許},
year = 2022,
month = {},
note = {特願2018-020392(2018/02/07), 特開2019-140182(2019/08/22), 特許第7116465号(2022/08/02)}
}
@misc{CTT100806612,
author = {菅原聡 and 近藤剛},
title = {熱電変換装置および電子装置},
howpublished = {登録特許},
year = 2021,
month = {},
note = {特願2018-536912(2017/02/23), 特開(再表）2018-042708(2019/06/24), 特許第6995370号(2021/12/17)}
}
@misc{CTT100633942,
author = {菅原聡 and 山本修一郎 and 周藤悠介},
title = {電子回路},
howpublished = {登録特許},
year = 2013,
month = {},
note = {特願2009-078082(2009/03/27), 特開2010-232959(2010/10/14), 特許第5234547号(2013/04/05)}
}
@misc{CTT100654999,
author = {山本修一郎 and 菅原聡},
title = {スピン注入磁化反転ＭＴＪを用いた不揮発性ＳＲＡＭ／ラッチ回路},
howpublished = {登録特許},
year = 2013,
month = {},
note = {特願2009-530030(2008/07/31), 再表2009/028298(2010/11/25), 特許第5170706号(2013/01/11)}
}
@phdthesis{CTT100594570,
author = {SATOSHI SUGAHARA},
title = {Si/Ge人工結晶に関する基礎研究},
school = {東京工業大学},
year = 1996,
}