@book{CTT100503252,
author = {H.Ishiwara and M.Okuyama and Y.Arimoto eds.},
title = {Ferroelectric Random Access Memories - Fundamentals and Applications},
publisher = {Springer-Verlag},
year = 2004,
}
@book{CTT100503251,
author = {T.Kijima and H.Ishiwara},
title = {“Part I, Novel Si-substituted ferroelectric films”, Ferroelectric Random Access Memories - Fundamentals and Applications, eds. by H.Ishiwara, M.Okuyama, and Y.Arimoto},
publisher = {Springer-Verlag},
year = 2004,
}
@book{CTT100503250,
author = {H.Ishiwara},
title = {“Part IV, The FET-type FeRAM”, Ferroelectric Random Access Memories - Fundamentals and Applications, eds. by H.Ishiwara, M.Okuyama, and Y.Arimoto},
publisher = {Springer-Verlag},
year = 2004,
}
@book{CTT100503312,
author = {石原宏 監修 },
title = {強誘電体メモリーの新展開},
publisher = {シーエムシー出版},
year = 2004,
}
@book{CTT100503313,
author = {石原宏},
title = {強誘電体メモリーの新展開 第1章 強誘電体メモリーの現状と次世代型への期待},
publisher = {シーエムシー出版},
year = 2004,
}
@book{CTT100503253,
author = {石原宏},
title = {次世代強誘電体メモリへの期待},
publisher = {化学工業},
year = 2004,
}
@book{CTT100503254,
author = {Y. Arimoto and H. Ishiwara},
title = {Current status of ferroelectric random-access memory},
publisher = {MRS Bulletin},
year = 2004,
}
@book{CTT100503255,
author = {田渕良志明 and 朴炳垠 and 會澤康治 and 川島良仁 and 高橋憲弘 and 加藤一実 and 有本由弘 and 石原宏},
title = {(Bi,Nd)4Ti3O12/HfO2/Si(100) 構造の作製と評価},
publisher = {電子情報通信学会技術研究報告},
year = 2004,
}
@book{CTT100503256,
author = {石原宏},
title = {トランジスタ型強誘電体メモリの新展開},
publisher = {第66回半導体･集積回路技術シンポジウム講演論文集},
year = 2004,
}
@book{CTT100492425,
author = {石原 宏},
title = {第6版 化学便覧、応用化学編 II編 7章 電子・光材料プロセス技術},
publisher = {日本化学会編、丸善},
year = 2003,
}
@book{CTT100492427,
author = {H.Kohlstedt and H.Ishiwara},
title = {Part III, Chap.14, Ferroelectric field effect transistors ed. by R.Waser Nanoelectronics and Information Technology - Advanced Electronic Materials and Novel Devices},
publisher = {Wiley-VCH, Weinheim},
year = 2003,
}
@book{CTT100492428,
author = {石原 宏},
title = {「次世代エレクトロニクス薄膜技術」第10章 強誘電体薄膜の作製とメモリ素子への応用},
publisher = {シーエムシー出版},
year = 2003,
}
@book{CTT100479250,
author = {石原宏},
title = {物理の世界-半導体エレクトロニクス},
publisher = {岩波書店},
year = 2002,
}
@book{CTT100479252,
author = {石原宏},
title = {4.3 次世代FeRAM「MRAM技術～基礎からLSI応用まで」},
publisher = {サイペック},
year = 2002,
}
@book{CTT100462886,
author = {石原宏},
title = {4.2.2トランジスタ型強誘電体メモリ;誘電体材料の特性と測定・および応用技術},
publisher = {技術情報協会},
year = 2001,
}
@book{CTT100443373,
author = {H. Ishiwara},
title = {Status of metal-ferroelectric-semiconductor field effect transistors(MFSFETs) and related devices},
publisher = {Handbook of Thin Film Devices (Academic Press)},
year = 2000,
}
@book{CTT100443209,
author = {石原宏},
title = {トランジスタ型強誘電体メモリ},
publisher = {記録・メモリ材料ハンドブック（朝倉書店）},
year = 2000,
}
@book{CTT100439552,
author = {逢坂哲弥 and 山崎陽太郎 and 石原宏},
title = {記録・メモリ材料ハンドブック（編著）},
publisher = {朝倉書店},
year = 2000,
}
@book{CTT100427590,
author = {石原宏},
title = {ニューロデバイスへの応用（第6章第3節）},
publisher = {「FRAM ICカード技術」（高須秀視、宅間俊則編著、サイエンスフォーラム）},
year = 1999,
}
@book{CTT100427589,
author = {石原宏},
title = {ヘテロエピタキシー技術（2.12節）},
publisher = {「図解・薄膜技術」日本表面科学会編},
year = 1999,
}
@book{CTT100427526,
author = {H.Ishiwara and T. Hoshino},
title = {Formation of strain-free heteroepitaxial structures by annealing under ultrahigh pressure（共著）},
publisher = {T. Nishinaga et. al.: Advances in the Understanding of Crystal Growth Mechanisms; Elsevier Science},
year = 1997,
}
@book{CTT100474872,
author = {石原宏},
title = {半導体デバイス工学},
publisher = {コロナ社},
year = 1990,
}
@article{CTT100390681,
author = {K.Kato and K.Suzuki and K.Tanaka and D.Fu and K.Nishizawa and T.Miki and H.Ishiwara},
title = {Ferroelectric characteristics of silicate-bound (Bi,La)4Ti3O12 thin films},
journal = {Appl. Phys. A},
year = 2005,
}
@article{CTT100501359,
author = {Y.Fujisaki and S.Ogasawara and H.Ishiwara},
title = {Advanced MFIS structure with Al2O3/Si3N4 stacked buffer layer},
journal = {Ferroelectrics},
year = 2003,
}
@article{CTT100390682,
author = {S.Kikuchi and H.Ishiwara},
title = {Improvement of ferroelectric properties in RF-magnetron- sputtered SrBi2Ta2O9 thin films by addition of Si atoms},
journal = {Jpn. J. Appl. Phys.},
year = 2005,
}
@article{CTT100501360,
author = {H.Ohki and H.Ishiwara},
title = {Characterization of (Bi,La)4Ti3O12 film formed on Pt electrode with (Cr,Ti)N/TiN/Ti barrier layers},
journal = {Ferroelectrics},
year = 2003,
}
@article{CTT100390683,
author = {B-E.Park and K.Takahashi and H.Ishiwara},
title = {Fabrication and electrical properties of Pt/ (Bi,La)4Ti3O12/HfO2/Si structures},
journal = {J. Korean Phys. Soc.},
year = 2005,
}
@article{CTT100501361,
author = {K.Aizawa and H.Ishiwara},
title = {Evaluation of ferroelectric/silicon interface state density in ferroelectric-gate transistors using a charge pumping method},
journal = {Ferroelectrics},
year = 2003,
}
@article{CTT100390684,
author = {H.Ohki and X.Wang and H.Ishiwara},
title = {Improvement of ferroelectric properties in Mo-substituted Bi3.35La0.75Ti3O12 films by optimization of heating rate},
journal = {Jpn. J. Appl. Phys.},
year = 2005,
}
@article{CTT100501362,
author = {B-E.Park and H.Ishiwara},
title = {Formation of (Bi,La)4Ti3O12 films on Si (100) substrates using LaAlO3 buffer layers},
journal = {Ferroelectrics},
year = 2003,
}
@article{CTT100390685,
author = {T.Furukawa and T.Kuroiwa and Y.Fujisaki and T.Sato and H.Ishiwara},
title = {Fatigueless ferroelectric capacitors with ruthenium bottom and top electrodes formed by metalorganic chemical vapor deposition},
journal = {Jpn. J. Appl. Phys.},
year = 2005,
}
@article{CTT100501363,
author = {K.Kato and K.Suzuki and K.Tanaka and D.Fu and K.Nishizawa and T.Miki and H.Ishiwara},
title = {Ferroelectric characteristics of silicate-bound (Bi,La)4Ti3O12 thin films},
journal = {Appl. Phys. A},
year = 2003,
}
@article{CTT100390686,
author = {H.Ohki and Y.Fujisaki and H.Ishiwara},
title = {Characterization of Si- and Mo-codoped Bi3.35La0.75Ti3O12 ferroelectric thin films},
journal = {Jpn. J. Appl. Phys.},
year = 2005,
}
@article{CTT100501364,
author = {K.Iseki and Y.Fujisaki and H.Ishiwara},
title = {Improvement of crystallinity in sol-gel derived (Bi,La)4Ti3O12 films by optimizing dry-gel structures},
journal = {Integrated Ferroelectrics},
year = 2003,
}
@article{CTT100390687,
author = {H-S.Kim and S.Yamamoto and T.Ishikawa and T.Fuchikami and H.Ohki and H.Ishiwara},
title = {Fabrication and characterization of 1k-bit 1T2C-type ferroelectric memory cell array},
journal = {Jpn. J. Appl. Phys.},
year = 2005,
}
@article{CTT100501365,
author = {K.Kato and H.Ishiwara},
title = {Address of SiO2-based addtives in Bi4Ti3O12 thin films},
journal = {Integrated Ferroelectrics},
year = 2003,
}
@article{CTT100390688,
author = {S.K.Singh and H.Ishiwara},
title = {Reduced Leakage Current in BiFeO3 Thin Films on Si Substrates Formed by a Chemical Solution Method},
journal = {Jpn. J. Appl. Phys.},
year = 2005,
}
@article{CTT100501366,
author = {B.-E.Park and H.Ishiwara},
title = {Formation of Silicate-Added (Bi,La)4Ti3O12 Films on LaAlO3/Si(100) Structures},
journal = {Integrated Ferroelectrics},
year = 2003,
}
@article{CTT100392071,
author = {Y.Fujisaki and H.Ishiwara},
title = {Ferroelectric thin film depositions for various types of FeRAMs (ferroelectric random access memories)},
journal = {Mater. Res. Soc. Symp. (Materials and Processes for Nonvolatile Memories) Proc.},
year = 2005,
}
@article{CTT100501367,
author = {B.-E Park and H.Ishiwara},
title = {Retention characteristics of (Bi,La)4Ti3O12 films on Si(100) substrates using LaAlO3 buffer layers},
journal = {Integrated Ferroelectrics},
year = 2003,
}
@article{CTT100540534,
author = {K.Aizawa and Y.Kawashima and H.Ishiwara},
title = {Long time data retention and a mechanism in ferroelectric-gate field effect transistors with HfO2 buffer layer},
journal = {Mater. Res. Soc. Symp. (Materials and Processes for Nonvolatile Memories) Proc.},
year = 2005,
}
@article{CTT100501368,
author = {H.Ohki and H.Ishiwara},
title = {Characterization of BLT films formed by using a flash-annealing process on Pt/(Cr,Ti)N/TiN/Ti bottom electrode},
journal = {Integrated Ferroelectrics},
year = 2003,
}
@article{CTT100392068,
author = {Y.Tabuchi and B-E.Park and K.Aizawa and Y.Kawashima and K.Takahashi and K.Kato and Y.Arimoto and H.Ishiwara},
title = {Formation of ferroelectric (Bi,Nd)4Ti3O12 thin films on HfO2/Si(100) structures for MFIS-type ferroelectric memory applications},
journal = {Integrated Ferroelectrics},
year = 2005,
}
@article{CTT100501369,
author = {S.Kikuchi and H.Ishiwara},
title = {Preparation of Si-added SrBi2Ta2O9 ferroelectric thin films by RF magnetron sputtering},
journal = {Integrated Ferroelectrics},
year = 2003,
}
@article{CTT100392064,
author = {K.Aizawa and S.Kobayashi and H.Ishiwara and K.Suzuki and K.Kato},
title = {Ferroelectric-gate field effect transistors using (Y,Yb)MnO3/Y2O3/Si(111) structures for 1T-type FeRAMs},
journal = {Integrated Ferroelectrics},
year = 2005,
}
@article{CTT100501370,
author = {H-S.Kim and S.Yamamoto and H.Ishiwara},
title = {Operation simulation of an 8F2 1T2C-type ferroelectric memory array with a revised data writing method},
journal = {Integrated Ferroelectrics},
year = 2003,
}
@article{CTT100392063,
author = {H-S.Kim and S.Yamamoto and H.Ishiwara},
title = {Improvement of data readout disturbance effect in 1T2C-type ferroelectric memory},
journal = {Integrated Ferroelectrics},
year = 2005,
}
@article{CTT100501371,
author = {B-J.Koo and H.Ishiwara},
title = {Fabrication and characterization ofgate-connected 1T2C-type ferroelectric memory with paired Bi4-XLaXTi3O12 capacitors},
journal = {Integrated Ferroelectrics},
year = 2003,
}
@article{CTT100392062,
author = {S.Yamamoto and T.Ishikawa and T.Fuchikami and H-S.Kim and K.Aizawa and B-E.Park and T.Furukawa and H.Ohki and S.Kikuchi and H.Hoko and H.Ishiwara},
title = {Fabrication of 1k-bit 1T2C-type ferroelectric memory cell array},
journal = {Integrated Ferroelectrics},
year = 2005,
}
@article{CTT100501372,
author = {T.Furukawa and T.Kuroiwa and Y.Fujisaki and T.Sato and H.Ishiwara},
title = {Chemical vapor deposition of Ru bottom electrode for ferroelectric Bi4-XLaXTi3O12 capacitors},
journal = {Integrated Ferroelectrics},
year = 2003,
}
@article{CTT100392060,
author = {K.Takahashi and K.Aizawa and B-E.Park and H.Ishiwara},
title = {Thirty-day-long data retention in ferroelectric-gate field-effect transistors with HfO2 buffer layers},
journal = {Jpn. J. Appl. Phys.},
year = 2005,
}
@article{CTT100501373,
author = {S.Kim and S.Yamamoto and H.Ishiwara},
title = {Improved data disturbance effects in 1T2C-type ferroelectric memory array},
journal = {Jpn. J.Appl. Phys.},
year = 2004,
}
@article{CTT100391574,
author = {K.Aizawa and H.Ishiwara},
title = {Reduction of pyrochlore phase and pronounced improvemrnt of ferroelectric properties in ultrathin SrBi2Ta2O9 films derived from Bi-rich sol-gel solution},
journal = {Jpn. J. Appl. Phys.},
year = 2005,
}
@article{CTT100501374,
author = {H.Ohki and X.Wang and H.Ishiwara},
title = {Ferroelectric properties of Mo-doped Bi4-XLaXTi3O12 films},
journal = {Integrated Ferroelectrics},
year = 2004,
}
@article{CTT100391572,
author = {S.Ohara and K.Aizawa and H.Ishiwara},
title = {Ferroelectric properties of Pt/Pb5Ge3O11/Pt and Pt/Pb5Ge3O11/HfO2/Si structures},
journal = {Jpn. J. Appl. Phys},
year = 2005,
}
@article{CTT100501375,
author = {T.Tamura and H.Hoko and Y.Arimoto and H.Ishiwara},
title = {Fabrication of sol-gel thin films of silicate- doped PZT},
journal = {Integrated Ferroelectrics},
year = 2004,
}
@article{CTT100400397,
author = {S.K.Singh and R.Ueno and H.Funakubo and H.Uchida and S.Koda and H.Ishiwara},
title = {Dependence of ferroelectric properties on thickness of BiFeO3 thin films fabricated by chemical solution deposition},
journal = {Jpn. J. Appl. Phys.},
year = 2005,
}
@article{CTT100501376,
author = {B-E.Park and H.Ishiwara},
title = {Fabrication and characterization of (Bi,La)4Ti3O12 films using LaAlO3 buffer layers for MFIS structures},
journal = {Integrated Ferroelectrics},
year = 2004,
}
@article{CTT100406585,
author = {S.K.Singh and H.Funakubo and H.Uchida and H.Ishiwara},
title = {Structural and electrical properties of BiFeO3 thin films},
journal = {Integrated Ferroelectric},
year = 2005,
}
@article{CTT100501377,
author = {Y.Kawashima and H.Ishiwara},
title = {Formation of ultra thin SrBi2Ta2O9 films using protective layers},
journal = {Integrated Ferroelectrics},
year = 2004,
}
@article{CTT100406586,
author = {X.Wang and H.Ishiwara},
title = {Properties of ferroelectric SrBi2Ta2O9-Bi4Ti3O12 thin films derived by the sol-gel method},
journal = {J. Crystal Growth},
year = 2005,
}
@article{CTT100501378,
author = {T.Furukawa and T.Kuroiwa and Y.Fujisaki and T.Sato and H.Ishiwara},
title = {Leakage current suppression of Pt/Bi4-XLaXTi3O12/Ru capacitors by post-annealing of Ru films},
journal = {Integrated Ferroelectrics},
year = 2004,
}
@article{CTT100501379,
author = {K.Aizawa and H.Ishiwara},
title = {Low voltage operation of ferroelectric capacitors using Sr-deficient and praseodymium-substituted strontium bismuth tantalete ultra thin films},
journal = {Integrated Ferroelectrics},
year = 2004,
}
@article{CTT100501380,
author = {HIROSHI ISHIWARA},
title = {Recent progress in FET-type ferroelectric memories},
journal = {Proc. of 1^st^ Intern. Sympo. on Dielectrics for Nanosystems : Materials Science, Processing, Reliability, and Manufacturing (Electrochem. Soc. Pennington, 2004)},
year = 2004,
}
@article{CTT100501381,
author = {T.Furukawa and T.Kuroiwa and Y.Fujisaki and T.Sato and H.Ishiwara},
title = {Fabrication of Ru/Bi4-XLaX Ti3O12/Ru ferroelectric capacitor structure using a Ru film deposited by metalorganic chemical vapor deposition},
journal = {Mater. Res. Soc. Sympo. Proc. (Ferroelectric Thin Films XII)},
year = 2004,
}
@article{CTT100501382,
author = {Y.Fujisaki and K.Iseki and H.Ishiwara},
title = {Long retention performance of a MFIS device achieved by introducing high-k Al2O3/Si3N4/Si buffer layer},
journal = {Mater. Res. Soc. Sympo. Proc. (Ferro- electric Thin Films XII)},
year = 2004,
}
@article{CTT100501383,
author = {K.Aizawa and B-E.Park and Y.Kawashima and K.Takahashi and H.Ishiwara},
title = {Impact of HfO2 buffer layers on data retention characteristics of ferroelectric-gate field effect transistors},
journal = {Appl. Phys. Lett.},
year = 2004,
}
@article{CTT100501384,
author = {B-E.Park and K.Takahashi and H.Ishiwara},
title = {Five-day-long ferroelectric memory effect in Pt/(Bi,La)4Ti3O12/HfO2/Si structures},
journal = {Appl. Phys. Lett.},
year = 2004,
}
@article{CTT100501343,
author = {B-E.Park and K.Takahashi and H.Ishiwara},
title = {Fabrication and characterization of Pt/(Bi,La)4Ti3O12/ HfO2/Si(100) structures},
journal = {16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu},
year = 2004,
}
@article{CTT100501344,
author = {B-J.Koo and Y.Hoshide and H.Ishiwara},
title = {Long-term retention characteristics of 1T2C-type ferroelectric memory},
journal = {16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu},
year = 2004,
}
@article{CTT100501345,
author = {K.Aizawa and S.Kobayashi and H.Ishiwara and K.Suzuki and K.Kato},
title = {Ferroelectric-gate field effect transistors using (Y,Yb)MnO3/Y2O3/Si(111) structures for 1T-type FeRAMs},
journal = {16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu},
year = 2004,
}
@article{CTT100501346,
author = {C.Aoki and H.Hoko and B-E.Park and H.Ishiwara},
title = {Electrical properties of HfxAlyO/Si and Bi3.45La0.75Ti3O12/HfxAlyO/Si structures},
journal = {16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu},
year = 2004,
}
@article{CTT100501347,
author = {S.Yamamoto and T.Ishikawa and T.Fuchikami and H-S.Kim and K.Aizawa and B-E.Park and T.Furukawa and H.Ohki and S.Kikuchi and H.Hoko and H.Ishiwara},
title = {Fabrication of 1k-bit 1T2C-type ferroelectric memory cell array},
journal = {16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu},
year = 2004,
}
@article{CTT100501348,
author = {H-S.Kim and S.Yamamoto and H.Ishiwara},
title = {Improvement of data readout disturbance effects in 1T2C-type ferroelectric memory array},
journal = {16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu},
year = 2004,
}
@article{CTT100501349,
author = {Y.Tabuchi and B-E.Park and K.Takahashi and K.Kato and Y.Arimoto and H.Ishiwara},
title = {Formation of ferroelectric (Bi,Nd)4Ti3O12 thin films on HfO2/Si(100) structures for MFIS-type ferroelectric memory applications},
journal = {16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu},
year = 2004,
}
@article{CTT100501350,
author = {B-Y.Tan and K.Iseki and H.Ohki and Y.Fujisaki and H.Ishiwara},
title = {Al2O3 hydrogen barrier encapsulation layer for FeRAM},
journal = {16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu},
year = 2004,
}
@article{CTT100501351,
author = {K.Takahashi and B-E.Park and H.Ishiwara},
title = {Electrical properties of Pt/SrBi2Ta2O9/HfO2/Si structure for a 1T-type ferroelectric memory},
journal = {16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu},
year = 2004,
}
@article{CTT100501352,
author = {HIROSHI ISHIWARA},
title = {Current status and prospect of FET-type ferroelectric memories},
journal = {16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu},
year = 2004,
}
@article{CTT100501353,
author = {K.Takahashi and B-E.Park and K.Aizawa and H.Ishiwara},
title = {30-day-long data retention in ferroelectric-gate FET’s with HfO2 buffer layers},
journal = {Intern. Conf. on Solid State Devices and Materials, Tokyo},
year = 2004,
}
@article{CTT100501354,
author = {H-S.Kim and S.Yamamoto and T.Ishikawa and H.Ishiwara},
title = {Fabrication and characteriza- tion of 1k-bit 1T2C-type ferroelectric memory cell array},
journal = {Intern. Conf. on Solid State Devices and Materials, Tokyo},
year = 2004,
}
@article{CTT100501355,
author = {HIROSHI ISHIWARA},
title = {Recent progress in FET-type ferroelectric memories},
journal = {1^st^ Intern. Sympo. on Dielectrics for Nanosystems : Materials Science, Processing, Reliability, and Manufacturing in 206^th^ Meeting of Electrochem. Soc. Honolulu},
year = 2004,
}
@article{CTT100501356,
author = {S.K.Singh and H.Ishiwara},
title = {Thickness dependence properties of Bi3.25La0.75Ti3O12 thin film capacitors},
journal = {National Seminar on Ferroelectrics and Dielectrics, Delhi},
year = 2004,
}
@article{CTT100501357,
author = {Y.Fujisaki and H.Ishiwara},
title = {Ferroelectric thin film depositions for various types of FeRAMs (ferroelectric random access memories)},
journal = {Fall Meeting of Mater. Res. Soc. (Sympo. D ; Materials and Processes for Nonvolatile Memories), Boston},
year = 2004,
}
@article{CTT100501358,
author = {K.Aizawa and B-E.Park and Y.Kawashima and K.Takahashi and H.Ishiwara},
title = {Effect of Ferroelectric/HfO2/Si Structures on Electrical Properties of Ferroelectric-gate FETs},
journal = {Fall Meeting of Mater. Res. Soc. (Sympo. D ; Materials and Processes for Nonvolatile Memories), Boston},
year = 2004,
}
@article{CTT100501969,
author = {菊池真 and 石原宏},
title = {FRマグネトロンスパッタ法によるSi添加SiBi2Ta2O9強誘電体薄膜の作製（３）},
journal = {第51回応用物理学関連連合講演会},
year = 2004,
}
@article{CTT100501970,
author = {大木博 and Xusheng Wang and 石原宏},
title = {MoドープBi4-xLaxTi3O12薄膜の強誘電体特性に及ぼす昇温レートの効果},
journal = {第51回応用物理学関連連合講演会},
year = 2004,
}
@article{CTT100501971,
author = {大木博 and 石原宏},
title = {Si添加Bi3.35La0.75(Ti1-xMox)3O12強誘電体薄膜の特性評価},
journal = {第51回応用物理学関連連合講演会},
year = 2004,
}
@article{CTT100501973,
author = {藤崎芳久 and 井関邦江 and 石原宏},
title = {減圧仮焼成プロセスによるゲルゾルBLT薄膜の特性改善（２）},
journal = {第51回応用物理学関連連合講演会},
year = 2004,
}
@article{CTT100501974,
author = {星出裕亮 and 具本宰 and 有本由弘 and 石原宏},
title = {均一なキャパシタ特性を持つ1T2C型強誘電体メモリの作製},
journal = {第51回応用物理学関連連合講演会},
year = 2004,
}
@article{CTT100501978,
author = {高橋憲弘 and 朴炳垠 and 川島良仁 and 田渕良志明 and 會澤康治 and 石原宏},
title = {(Bi,La)4Ti3O12/HfO2構造を用いたMFISダイオードおよび１T型FETの電気的特性評価},
journal = {第51回応用物理学関連連合講演会},
year = 2004,
}
@article{CTT100501980,
author = {會澤康治 and 川島良仁 and 高橋憲弘 and 朴炳垠 and 石原宏},
title = {SBT/HfO2構造を用いたMFIS DiodeおよびFETの作製と評価},
journal = {第51回応用物理学関連連合講演会},
year = 2004,
}
@article{CTT100501984,
author = {田渕良志明 and 朴炳垠 and 會澤康治 and 川島良仁 and 高橋憲弘 and 加藤一実 and 有本由弘 and 石原宏},
title = {(Bi,Nd)4Ti3O12/HfO2/Si(100)構造MFIS型強誘電体メモリの作製とデータ保持特性の評価},
journal = {第51回応用物理学関連連合講演会},
year = 2004,
}
@article{CTT100501989,
author = {青木千恵子 and 鉾宏真 and 朴炳垠 and 石原宏},
title = {HfO2系非晶質バッファ層を用いたMFIS(metal-ferroelectric-insulator-semiconductor)構造の特性},
journal = {第51回応用物理学関連連合講演会},
year = 2004,
}
@article{CTT100501992,
author = {キムヒンス and 山本修一郎 and 石原宏},
title = {1T2C型強誘電体メモリアレイにおけるV/4ルールデータ書き込み法の提案},
journal = {第51回応用物理学関連連合講演会},
year = 2004,
}
@article{CTT100501996,
author = {タンブンイー and 井関邦江 and 大木博 and 藤崎芳久 and 石原宏},
title = {Radical-Si3N4/高誘電率バッファー層を用いたMFIS－FETの作製と評価},
journal = {第51回応用物理学関連連合講演会},
year = 2004,
}
@article{CTT100501735,
author = {青木千恵子 and 石原宏 and 鉾宏真},
title = {HfSiON非晶質バッファ層を用いたMFIS型構造の特性},
journal = {第65回応用物理学会学術講演会},
year = 2004,
}
@article{CTT100501736,
author = {キムヒンス and 山本修一郎 and 石川徹 and 石原宏},
title = {1T2C型強誘電体メモリアレイの作製と評価},
journal = {第65回応用物理学会学術講演会},
year = 2004,
}
@article{CTT100501740,
author = {會澤康治 and 高橋憲弘 and 田村哲朗 and 有本由弘 and 石原宏},
title = {CVD HfO2薄膜をバッファ層に用いたSBT/HfO2/p-Si構造の作製と評価},
journal = {第65回応用物理学会学術講演会},
year = 2004,
}
@article{CTT100501742,
author = {田渕良志明 and 朴炳垠 and 會澤康治 and 川島良仁 and 高橋憲弘 and 田村哲朗 and 鉾宏真 and 加藤一実 and 有本由弘 and 石原宏},
title = {(Bi, Nd)4Ti3O12/HfO2/Si(100)構造MFIS型強誘電体メモリの特性評価},
journal = {第65回応用物理学会学術講演会},
year = 2004,
}
@article{CTT100501743,
author = {高橋憲弘 and 會澤康治 and 田村哲朗 and 有本由弘 and 石原宏},
title = {(Bi,La)4Ti3O12/CVD HfO2構造を用いたMFISダイオードの電気的特性評価},
journal = {第65回応用物理学会学術講演会},
year = 2004,
}
@article{CTT100664699,
author = {M. S. Bozgeyik and J. S. Cross and H. Ishiwara and K. Shinozaki},
title = {Electrical and Memory Window Properties of Sr0.8-xBaxBi2.2Ta2-yZryO9 Ferroelectric Gate in Metal-Ferroelectric-Insulator-Semiconductor Structure},
journal = {Journal of Electroceramics},
year = 2012,
}
@article{CTT100627546,
author = {Gwang-Geun Lee and Yosihisa Fujisaki and Hiroshi Ishiwara and Eisuke Tokumitsu},
title = {Low-voltage Operation of Ferroelectric Gate Thin Film Transistors Using Indium Gallium Zinc Oxide-Channel and Ferroelectric Polymer Poly(vinylidene fluoride-trifluoroethylene)},
journal = {Applied Physics Express},
year = 2011,
}
@article{CTT100627545,
author = {Gwang-Geun Lee and Eisuke Tokumitsu and Sung-Min Yoon and Yosihisa Fujisaki and Joo-Won Yoon and Hiroshi Ishiwara},
title = {The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)},
journal = {Applied Physics Letters},
year = 2011,
}
@article{CTT100629656,
author = {Jeong Hwan Kim and Hiroshi Funakubo and Hiroshi Ishiwara},
title = {Comparison of Ferroelectric and Insulating Properties of Mn-Doped BiFeO3 Films Formed on Pt, SrRuO3/Pt, and LaNiO3/Pt Bottom Electrodes by Radio-Frequency Sputtering},
journal = {Jpn. J. Appl. Phys.},
year = 2011,
}
@article{CTT100629659,
author = {Jeong Hwan Kim and Hiroshi Funakubo and Hiroshi Ishiwara},
title = {High Fatigue Endurance and Large Remanent Polarization in Pt/SrRuO3/BiFe0:95Mn0:05O3/SrRuO3/Pt Ferroelectric Capacitors Formed on SiO2-Coated Si Substrates},
journal = {Applied Physics Express},
year = 2011,
}
@article{CTT100611204,
author = {Mehmet S. Bozgeyik and J.S. Cross and H. Ishiwara and K. Shinozaki},
title = {Characteristics of metal-ferroelectric-insulator-semiconductor structure using Sr0.8Bi2.2Ta2O9 and Sr0.8Bi2.2Ta2O9-BaZrO3 for ferroelectric gates},
journal = {Microelectronic Engineering},
year = 2010,
}
@article{CTT100614542,
author = {Sung-Min Yoon and Shin-Hyuk Yang and Soon-Won Jung and Chun-Won Byun and Sang-Hee Ko Park and Chi-Sun Hwang and Gwang-Geun Lee and Eisuke Tokumitsu and Hiroshi Ishiwara},
title = {Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In-Ga-Zn ocide-based ferroelectric memory transistor},
journal = {Applied Physics Letters},
year = 2010,
}
@article{CTT100613241,
author = {Jeong Hwan Kim and Hiroshi Funakubo and Yoshihiro Sugiyama and Hiroshi Ishiwara},
title = {Process-dependent coercive fields in undoped and Mn-doped BiFeO3 films formed on SrRuO3/Pt(111) electrodes by rf sputtering},
journal = {Mater. Res. Soc. Symp. Proc.},
year = 2010,
}
@article{CTT100584822,
author = {Mehmet S. Bozgeyik and Jeffrey S. Cross and Hiroshi Ishiwara and Kazuo Shinozaki},
title = {Ferroelectric Properties of BaZrO3 Doped Sr0.8Bi2.2Ta2O9 Thin Films},
journal = {Jpn. J. Appl. Phys.},
year = 2009,
}
@article{CTT100590281,
author = {Mehmet S. Bozgeyik and J.S. Cross and H. Ishiwara and K. Shinozaki},
title = {Effect of Ba and Zr doping in Sr0.8Bi2.2Ta2O9 thin films},
journal = {Materials Science and Engineering B},
year = 2009,
}
@article{CTT100585512,
author = {M. Akhtaruzzaman and S. Ohmi and J. Nishida and Y. Yamashita and H. Ishiwara},
title = {Study on Stability of Pentacene-Based Metal-Oxide-Semiconductor Diodes in Air Using Capacitance-Voltage Characteristics},
journal = {Japan J. Appl. Phys.},
year = 2009,
}
@article{CTT100592689,
author = {Jeong Hwan Kim and Hiroshi Funakubo and Yoshihiro Sugiyama and Hiroshi Ishiwara},
title = {Characteristics of Undoped and Mn-Doped BiFeO3 Films Formed on Pt and SrRuO3/Pt Electrodes by Radio-Frequency Sputtering},
journal = {Jpn. J.Appl. Phys.},
year = 2009,
}
@article{CTT100584820,
author = {Mehmet S. Bozgeyik and J. S. Cross and H. Ishiwara and K. Shinozaki},
title = {Ferroelectric and Electrical Properties of BaZrO3 Doped Sr0.8Bi2.2Ta2O9 Thin Films},
journal = {Mater. Res. Soc. Symp. Proc.},
year = 2008,
}
@article{CTT100550625,
author = {Y. Taniguchi and T. Endo and K. Azuma and M. Matsumura and H. Ishiwara},
title = {Novel Optical Method for Widening Process Window of Phase-Modulated Excimer Laser Crystallization},
journal = {Jpn. J. Appl. Phys.},
year = 2008,
}
@article{CTT100550626,
author = {X-B Lu and K. Maruyama and H. Ishiwara},
title = {Metal-ferroelectric-insulator-Si devices using HfTaO buffer layers},
journal = {Semicond. Sci. Technol.},
year = 2008,
}
@article{CTT100550627,
author = {X-B Lu and K. Maruyama and H. Ishiwara},
title = {Characterization of HfTaO films for gate oxide and etal-ferroelectric-insulator-silicon device applications},
journal = {J. Appl. Phys.},
year = 2008,
}
@article{CTT100550624,
author = {S. Fujisaki and Y. Fujisaki and H. Ishiwara},
title = {Excellent Ferroelectricity of Thin Poly (Vinylidene Fluoride-Trifluoroethylene) Copolymer Films and Low Voltage Operation of Capacitors and Diodes},
journal = {IEEE Trans. on Untrsonics, Ferroelectrics, and Frequency Control},
year = 2007,
}
@article{CTT100550623,
author = {S. K. Singh and H. Ishiwara and K. Sato and K. Maruyama},
title = {Microstructure and frequency dependent electrical properties of Mn-substituted BiFeO3 thin films},
journal = {J. Appl. Phys.},
year = 2007,
}
@article{CTT100550618,
author = {S.K.Singh and N.Menou and H.Funakubo and K.Maruyama and H.Ishiwara},
title = {(111)-textured Mn-substituted BiFeO3 thin films on SrRuO3/Pt/Ti/SiO2/Si structures},
journal = {Appl. Phys. Lett.},
year = 2007,
}
@article{CTT100550580,
author = {S.K.Singh and K.Maruyama and H.Ishiwara},
title = {The influence of La-substitution on the micro-structure and ferroelectric properties of chemical-solution-deposited BiFeO3 thin films},
journal = {J. Phys. D: Appl. Phys.},
year = 2007,
}
@article{CTT100550617,
author = {S.Fujisaki and H.Ishiwara and Y.Fujisaki},
title = {Low-voltage operation of ferroelectric poly(vinylidene fluoridetrifluoroethylene) copolymer capacitors and metal-ferroelectric-insulator-semiconductor diodes},
journal = {Appl. Phys. Lett.},
year = 2007,
}
@article{CTT100550579,
author = {SINGH SUSHIL KUMAR and H.Ishiwara},
title = {Site engineering in chemical-solution-deposited Bi3.25La0.75Ti3O12 thin films using Ce, Zr, Mn and Si atoms},
journal = {J. Sol-Gel Sci. Technol.},
year = 2007,
}
@article{CTT100550619,
author = {Y.Tabuchi and S.Hasegawa and T.Tamura and H.Hoko and K.Kato and Y.Arimoto and H.Ishiwara},
title = {Multi-Bit Programming Technique for an MFIS-FET with a Pt/(Bi, Nd)4Ti3O12/HfO2/Si Substrate Structure},
journal = {Integrated Ferroelectrics},
year = 2007,
}
@article{CTT100550622,
author = {S.K.Singh and K.Maruyama and H.Ishiwara},
title = {Reduced leakage current in La and Ni codoped BiFeO3 thin films},
journal = {Appl. Phys. Lett.},
year = 2007,
}
@article{CTT100550500,
author = {kumar singh_sushil and HIROSHI ISHIWARA},
title = {Bottom electrodes dependence of ferroelectric properties in epitaxial BiFeO3/SrRuO3/SrTiO3 structures},
journal = {Integrated Ferroelectrics},
year = 2007,
}
@article{CTT100524904,
author = {S.K.Singh and K.Sato and K.Maruyama and H.Ishiwara},
title = {Cr-doping Effects to Electrical Properties of BiFeO3 Thin Films Formed by Chemical Solution Deposition},
journal = {Jpn. J. Appl. Phys.},
year = 2006,
}
@article{CTT100524903,
author = {S.K.Singh and H.Ishiwara},
title = {Enhanced polarization and reduced leakage current in BiFeO3 thin films fabricating by chemical solution deposition},
journal = {J. Appl. Phys.},
year = 2006,
}
@article{CTT100524902,
author = {T.Furukawa and T.Kuroiwa and T.Sato and Y.Fujisaki and H.Ishiwara},
title = {Leakage current characteristics of Pt/Bi4-xLaxTi3O12/Ru ferroelectric capacitors fabricated on metal-organic chemical vapor deposited Ru films},
journal = {J. Appl. Phys.},
year = 2006,
}
@article{CTT100524901,
author = {S.K.Singh and H.Ishiwara and K.Maruyama},
title = {Room temperature ferroelectric properties of Mn-substituted BiFeO3 thin films deposited on Pt electrodes using chemical solution deposition},
journal = {Appl. Phys. Lett.},
year = 2006,
}
@article{CTT100524896,
author = {K.Takahashi and K.Aizawa and H.Ishiwara},
title = {Optimum ferroelectric film thickness in metal-ferroelectric-insulator -semiconductor structures composed of Pt, (Bi,La)4Ti3O12, HfO2, and Si},
journal = {Jpn. J. Appl. Phys.},
year = 2006,
}
@article{CTT100524892,
author = {S.K.Singh and H.Ishiwara},
title = {Electrical properties of Pt/Bi3.45La0.75Ti3O12/Pt thin film capacitors tailored by cerium doping},
journal = {J. Mater. Res.},
year = 2006,
}
@article{CTT100524893,
author = {S.K.Singh and H.Ishiwara},
title = {Doping effect of rare earth ions to electric properties of BiFeO3 thin films fabricated by chemical solution deposition},
journal = {Jpn. J. Appl. Phys.},
year = 2006,
}
@article{CTT100524905,
author = {S.K.Singh and H.Ishiwara},
title = {Micro-structure and ferroelectric properties of BiFeO3 thin films formed on Pt-coated R-plane sapphire substrates},
journal = {J. Electrocramics},
year = 2006,
}
@article{CTT100524900,
author = {Y.Tabuchi and K.Aizawa and T.Tamura and K.Takahashi and H.Hoko and K.Kato and Y.Arimoto and H.Ishiwara},
title = {Characterization of (Bi,Nd)4Ti3O12/HfO2/p-type Si structures for MFIS-FeRAM application},
journal = {Integrated Ferroelectrics},
year = 2006,
}
@article{CTT100524899,
author = {H.Hoko and C.Aoki and Y.Tabuchi and T.Tamura and K.Maruyama and Y.Arimoto and H.Ishiwara},
title = {Electrical properties of Pt/BLT/HfSiON/Si structure for 1T-type ferroelectric memory},
journal = {Integrated Ferroelectrics},
year = 2006,
}
@article{CTT100524898,
author = {S.K.Singh and H.Ishiwara},
title = {Defect engineering for control of polarization fatigue in Bi3.25La0.75Ti3O12 thin film capacitors},
journal = {Integrated Ferroelectrics},
year = 2006,
}
@article{CTT100524897,
author = {H.Ishiwara},
title = {Applications of bismuth-layered perovskite thin films to FET-type ferroelectric memories},
journal = {Integrated Ferroelectrics},
year = 2006,
}
@article{CTT100524895,
author = {S.K.Singh and Y-K.Kim and H.Funakubo and H.Ishiwara},
title = {Epitaxial BiFeO3 thin films fabricated by chemical solution deposition},
journal = {Appl. Phys. Lett.},
year = 2006,
}
@article{CTT100524891,
author = {S.K.Singh and H.Ishiwara},
title = {Enhanced electrical properties in Mn-doped Bi3.25La0.75Ti3O12 thin films},
journal = {Mater. Res. Soc. Symp. (Ferroelectric Thin Films XIII) Proc.},
year = 2006,
}
@article{CTT100524890,
author = {S.K.Singh and H.Ishiwara},
title = {Ferroelectric properties enhancement in niobium-substituted Bi3.25La0.75Ti3O12 thin films prepared by chemical solution route},
journal = {Thin Solid Films},
year = 2006,
}
@article{CTT100550487,
author = {S.K.Singh and K.Maruyama and H.Ishiwara},
title = {Room temperature ferroelectric properties of SrBi2Ta2O9- and (Bi, La)4Ti3O12-incorporated BiFeO3 thin films},
journal = {Integrated Ferroelectrics},
year = 2006,
}
@article{CTT100550482,
author = {Y.Tabuchi and K. Aizawa and T. Tamura and K. Takahashi and H. Hoko and K. Kato and Y. Arimoto and H. Ishiwara},
title = {Characterization of (Bi,Nd)4Ti3O12/HfO2/p-Type Si Structures for MFIS-FeRAM Application},
journal = {Integrated Ferroelectrics},
year = 2006,
}
@article{CTT100550478,
author = {kumar singh_sushil and HIROSHI ISHIWARA},
title = {Excellent room-temperature ferroelectricity in Mn-substituted BiFeO3 thin films formed by chemical solution deposition},
journal = {Mater. Res. Soc. Symp. Proc.},
year = 2006,
}
@article{CTT100550475,
author = {kumar singh_sushil and HIROSHI ISHIWARA},
title = {Improved fatigue endurance in Mn-doped Bi3.25La0.75Ti3O12 thin films},
journal = {Solid State Communications},
year = 2006,
}
@article{CTT100550474,
author = {kumar singh_sushil and S.K.Singh H.Ishiwara},
title = {Micro-structure and ferroelectric properties of BiFeO3 thin films formed on Pt-coated R-plane sapphire substrates},
journal = {J. Electrocramics},
year = 2006,
}
@article{CTT100492899,
author = {川島良仁 and 石原宏},
title = {保護膜被覆によるSrBi2Ta2O9の薄膜化},
journal = {第50回応用物理学関係連合講演会},
year = 2003,
}
@article{CTT100492454,
author = {B-E.Park and H.Ishiwara},
title = {Retention characteristics on (Bi,La)4Ti3O12 films on Si(100) substrates using LaAlO3 buffer layers},
journal = {15th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs},
year = 2003,
}
@article{CTT100492455,
author = {H.Ohki and H.Ishiwara},
title = {Characterization of BLT films formed by using a flash-annealing process on Pt/(Cr,Ti)N/TiN/Ti bottom electrode},
journal = {15th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs},
year = 2003,
}
@article{CTT100492457,
author = {K.Iseki and Y.Fujisaki and H.Ishiwara},
title = {Improvement of crystallinity in sol-gel derived BLT by optimizing dry-gel},
journal = {15th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs},
year = 2003,
}
@article{CTT100492458,
author = {K.Kato and H.Ishiwara},
title = {Address of SiO2-based additives in Bi4Ti3O12 thin films},
journal = {15th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs},
year = 2003,
}
@article{CTT100492459,
author = {S.Kikuchi and H.Ishiwara},
title = {Preparation of Bi2SiO5-SrBi2Ta2O9 ferroelectric thin films by RF magnetron sputtering},
journal = {15th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs},
year = 2003,
}
@article{CTT100492516,
author = {Y.Fjisaki and K.Iseki and H.Ishiwara},
title = {Elimination of charge states in high-k Al2O3/Si3N4 stacked insulator using nitrogen radicals},
journal = {15th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs},
year = 2003,
}
@article{CTT100492902,
author = {菊地真 and 石原宏},
title = {RFマグネトロンスパッタ法によるSi添加SrBi2Ta2O9強誘電体薄膜の作製(2)},
journal = {第50回応用物理学関係連合講演会},
year = 2003,
}
@article{CTT100492518,
author = {Y.Fjisaki and K.Iseki and H.Ishiwara},
title = {Significant enhancement of Bi4-XLaXTi3O12 thin films achieved by optimizing dry gel structure during sol-gel process},
journal = {Sympo. on Polar Oxides – Properties, Characterization and Imaging, Capri},
year = 2003,
}
@article{CTT100492520,
author = {E.Tokumitsu and M.Kishi and K.Iseki and Y.Fujisaki and H.Ishiwara},
title = {Ferroelectric-gate structures using ferroelectric (Sr,Sm)Bi2Ta2O9 films with Al2O3/Si3N4 buffer layer},
journal = {2003 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices},
year = 2003,
}
@article{CTT100492521,
author = {T.Tamura and H.Hoko and Y.Arimoto and H.Ishiwara},
title = {Fabrication of sol-gel thin films of silicate doped PZT},
journal = {10th European Meeting on Ferroelectricity},
year = 2003,
}
@article{CTT100492527,
author = {H.Ohki and X.Wang and H.Ishiwara},
title = {Ferroelectric properties of Mo-doped Bi4-XLaXTi3O12 films},
journal = {10th European Meeting on Ferroelectricity},
year = 2003,
}
@article{CTT100492419,
author = {T.Kijima and H.Ishiwara},
title = {New line of solid solution system of oxide ferroelectrics},
journal = {Mater. Res. Soc. Sympo. Proc.},
year = 2003,
}
@article{CTT100492417,
author = {B.J.Koo and H.Ishiwara},
title = {Characteristics of paired Bi4-xLaxTi3O12 (BLT) capacitors suitable for 1T2C-type FeRAM},
journal = {Jpn. J. Appl. Phys.},
year = 2003,
}
@article{CTT100492416,
author = {S.Yamamoto and H-S.Kim and H.Ishiwara},
title = {Proposal of a planar 8F2 1T2C-type ferroelectric memory cell},
journal = {Jpn. J. Appl. Phys.},
year = 2003,
}
@article{CTT100492415,
author = {Y.Kawashima and T.Kijima and H.Ishiwara},
title = {Ferroelectric characteristics control of (Bi,La)4Ti3O12 and SrBi2Ta2O9 films by addition of silicates and germanates},
journal = {Jpn. J. Appl. Phys.},
year = 2003,
}
@article{CTT100492414,
author = {T.Kijima and H.Ishiwara},
title = {Preparation of ferroelectric thin films using sol-gel solutions dissolved in supercritical carbon dioxide},
journal = {Jpn. J. Appl. Phys.},
year = 2003,
}
@article{CTT100492413,
author = {X.Wang and H.Ishiwara},
title = {Polarization enhancement and coercive field reduction in W- and Mo-doped Bi3.35La0.75Ti3O12 thin films},
journal = {Appl. Phys. Lett.},
year = 2003,
}
@article{CTT100492412,
author = {B.J.Koo and H.Ishiwara},
title = {Characteristics of 1T2C-type ferroelectric memory with paired Bi4-xLaxTi3O12 (BLT) capacitors},
journal = {J. Korean Phys. Soc.},
year = 2003,
}
@article{CTT100492411,
author = {H.Ishiwara},
title = {Recent Progress on Ferroelectric Memories},
journal = {Intern. J. High Speed Electronics and Systems},
year = 2003,
}
@article{CTT100492410,
author = {Y.Fujisaki and K.Iseki and H.Ishiwara},
title = {Significant enhancement of Bi3.45La0.75Ti3O12 ferroelectricity derived by sol-gel method},
journal = {Jpn. J. Appl. Phys.},
year = 2003,
}
@article{CTT100492272,
author = {井関邦江 and 藤崎芳久 and 石原宏},
title = {LSMCDによるAl2O3/Si3N4バｯファー層上への(Bi,La)4Ti3O12薄膜の作製},
journal = {第64回応用物理学会学術講演会},
year = 2003,
}
@article{CTT100492422,
author = {K.Aizawa and H.Ishiwara},
title = {Praseodymium-substituted strontium bismuth tantalate films with saturated remanent polarization at 1V},
journal = {Jpn. J. Appl. Phys.},
year = 2003,
}
@article{CTT100492423,
author = {K.Kato and H.Ishiwara},
title = {Effects of SiO2-based additives on Bi-based layer-structured ferroelectrics},
journal = {Key Engineering Materials},
year = 2003,
}
@article{CTT100492424,
author = {Y.Idemoto and T.Miyahara and N.Koura and T.Kijima and H.Ishiwara},
title = {Crystal structure and ferro- electric properties of (Bi,La)4(Ti,Si)3O12 as a bulk ferroelectric material},
journal = {Solid State Communications},
year = 2003,
}
@article{CTT100492435,
author = {金泫秀､山本修一郎､石原宏},
title = {1T2C型強誘電体メモリにおけるデータディスターブの解析と低減法の提案},
journal = {電子情報通信学会技術研究報告},
year = 2003,
}
@article{CTT100492438,
author = {藤崎芳久 and 井関邦江 and 石原宏},
title = {減圧仮焼成プロセスを用いたBLT強誘電体薄膜の大幅特性向上},
journal = {電子情報通信学会技術研究報告},
year = 2003,
}
@article{CTT100492440,
author = {藤崎芳久 and 井関邦江 and 石原宏},
title = {乾燥ゲル構造の最適化によるBLT薄膜の強誘電性向上},
journal = {電気学会，電子材料研究会資料},
year = 2003,
}
@article{CTT100492444,
author = {H-S.Kim and S.Yamamoto and H.Ishiwara},
title = {Operation simulation of an 8F2 1T2C-type ferroelectric memory array with a revised data writing method},
journal = {15th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs},
year = 2003,
}
@article{CTT100492446,
author = {B.J.Koo and H.Ishiwara},
title = {Fabrication and characterization of gate-connected 1T2C-type ferroelectric memory with paired Bi4-XLaXTi3O12 (BLT) capacitors},
journal = {15th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs},
year = 2003,
}
@article{CTT100492451,
author = {T.Furukawa and T.Kuroiwa and Y.Fujisaki and T.Sato and H.Ishiwara},
title = {Chemical vapor deposition of Ru bottom electrode for ferroelectric Bi4-XLaXTi3O12 capacitors},
journal = {15th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs},
year = 2003,
}
@article{CTT100492452,
author = {T.Ishikawa and S.Yamamoto and T.Fuchikami and T.Furukawa and K.Aizawa and B-E.Park and S.Kikuchi and H.Ohki and H.Hoko and H.Ishiwara},
title = {Fabrication of 1T2C-type ferroelectric memory cell array},
journal = {15th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs},
year = 2003,
}
@article{CTT100494067,
author = {H.Ishiwara},
title = {Recent progress in FET-type ferroelectric memories},
journal = {Intern. Electron Devices Meeting},
year = 2003,
}
@article{CTT100494057,
author = {Y.Fujisaki and K.Iseki and H.Ishiwara},
title = {Long retention performance of a MFIS device achieved by introducing high-k Al2O3/Si3N4/Si Buffer layer},
journal = {Fall Meeting of Mater. Res. Soc. (Sympo. C ; Ferroelectric thin Films XII)},
year = 2003,
}
@article{CTT100494052,
author = {D.Furukawa and T.Kuroiwa and Y.Fujisaki and T.Sato and H.Ishiwara},
title = {Fabrication of Ru/Bi4-XLaXTi3O12/Ru ferroelectric capacitor structure using a Ru film deposited by metalorganic chemical vapor deposition},
journal = {Fall Meeting of Mater. Res. Soc. (Sympo. C ; Ferroelectric thin Films XII)},
year = 2003,
}
@article{CTT100493089,
author = {松本貴希 and 石原宏},
title = {ゲートトンネルリング電流に基づくSOIデバイス特性の変化},
journal = {第64回応用物理学会学術講演会},
year = 2003,
}
@article{CTT100493083,
author = {古川泰助 and 黒岩丈晴 and 藤崎芳久 and 佐藤剛彦 and 石原宏},
title = {MOCVD法によるRu膜の強誘電体メモリ電極への適用検討(３)},
journal = {第64回応用物理学会学術講演会},
year = 2003,
}
@article{CTT100493080,
author = {木島健 and 石原宏},
title = {Siを添加した強誘電体薄膜の諸特性},
journal = {第64回応用物理学会学術講演会},
year = 2003,
}
@article{CTT100493073,
author = {大木博 and X-Wang and 石原宏},
title = {Bi4xLaxTi3O12強誘電体薄膜に対するMoドープ効果},
journal = {第64回応用物理学会学術講演会},
year = 2003,
}
@article{CTT100493072,
author = {朴炳垠 and 石原宏},
title = {Pt基板上に形成したBLT((Bi,La)4Ti3O12)薄膜の昇温レート依存性},
journal = {第64回応用物理学会学術講演会},
year = 2003,
}
@article{CTT100493070,
author = {川島良仁 and 石原宏},
title = {超臨界二酸化炭素を利用した強誘電体薄膜の作製},
journal = {第64回応用物理学会学術講演会},
year = 2003,
}
@article{CTT100493061,
author = {菊地真 and 石原宏},
title = {RFマグネトロンスパッタ法によるSi添加SrBi2Ta2O9強誘電体薄膜の加熱基板上への成膜},
journal = {第64回応用物理学会学術講演会},
year = 2003,
}
@article{CTT100493060,
author = {會澤康治 and 石原宏},
title = {Bi過剰前駆体溶液を用いたゾルゲルSBT極薄膜の形成と分極特性},
journal = {第64回応用物理学会学術講演会},
year = 2003,
}
@article{CTT100493059,
author = {山本修一郎 and 石原宏},
title = {1T2C型強誘電体メモリアレイの読み出し回路の設計と評価},
journal = {第64回応用物理学会学術講演会},
year = 2003,
}
@article{CTT100493058,
author = {具本宰 and 星出裕亮 and 石原宏},
title = {BLT薄膜を用いた1T2C型強誘電体メモリのデータ保持特性},
journal = {第64回応用物理学会学術講演会},
year = 2003,
}
@article{CTT100493057,
author = {金泫秀 and 山本修一郎 and 石原宏},
title = {1T2C型強誘電体メモリセルに対する読み出しディスターブの低減法},
journal = {第64回応用物理学会学術講演会},
year = 2003,
}
@article{CTT100493056,
author = {タンブン イー and 斉藤亮平 and 山本修一郎 and 石原宏},
title = {強誘電体を用いた不揮発性CMOSラッチ回路の特性評価},
journal = {第64回応用物理学会学術講演会},
year = 2003,
}
@article{CTT100493055,
author = {藤崎芳久 and 井関邦江 and 石原宏},
title = {Pt/LSMCD-BLT/ALD-ALD/Al2O3/Radical-Si3N4/Siの長期データ保持特性},
journal = {第64回応用物理学会学術講演会},
year = 2003,
}
@article{CTT100493024,
author = {石川徹 and 山本修一郎 and 石原宏},
title = {SPICEによる1T2C型強誘電体メモリアレイの動作解析},
journal = {第50回応用物理学関係連合講演会},
year = 2003,
}
@article{CTT100493023,
author = {山本修一郎 and 石原宏},
title = {強誘電体を用いたCMOS不揮発性ラッチ回路の消費電力の評価},
journal = {第50回応用物理学関係連合講演会},
year = 2003,
}
@article{CTT100493022,
author = {金泫季 and 山本修一郎 and 石原宏},
title = {1T2C型強誘電体メモリアレイに対するデータ書き込みディスターブの低減法},
journal = {第50回応用物理学関係連合講演会},
year = 2003,
}
@article{CTT100493021,
author = {具本宰 and 石原宏},
title = {BLT薄膜を用いたゲート接続型1T2C強誘電体メモリの特性},
journal = {第50回応用物理学関係連合講演会},
year = 2003,
}
@article{CTT100493020,
author = {朴炳垠 and 石原宏},
title = {BLT/LaAlO3/Si(100)キャパシタの作製と保持特性},
journal = {第50回応用物理学関係連合講演会},
year = 2003,
}
@article{CTT100493019,
author = {小林宗太 and 朴炳垠 and 會澤康治 and 石原 宏},
title = {MBE法で作製したLaALO3/Si構造を用いたMFISダイオードの作製と電気的特性},
journal = {第50回応用物理学関係連合講演会},
year = 2003,
}
@article{CTT100493018,
author = {藤崎芳久 and 井関邦江 and 石原宏},
title = {Radical-Si3N4/ALD-Al2O3high-k膜のポスト窒化による特性改善},
journal = {第50回応用物理学関係連合講演会},
year = 2003,
}
@article{CTT100493015,
author = {藤崎芳久 and 井関邦江 and 石原宏},
title = {減圧仮焼成プロセスによるゾルゲルBLT薄膜の特性改善},
journal = {第50回応用物理学関係連合講演会},
year = 2003,
}
@article{CTT100493014,
author = {井関邦江 and 藤崎芳久 and 渡辺隆之 and 舟窪浩 and 石原宏},
title = {Bi堆積層を用いたゾルゲル(Bi,La)4Ti3O12薄膜の結晶性制御},
journal = {第50回応用物理学関係連合講演会},
year = 2003,
}
@article{CTT100493013,
author = {井出本康 and 小浦延幸 and 石原宏 and C.-K.Loong and J.W.Richardson and Jr.},
title = {Bi3.25La0.75(Ti,Si)3O12の熱処理による結晶構造、物性と強誘電体特性の関係},
journal = {第50回応用物理学関係連合講演会},
year = 2003,
}
@article{CTT100493011,
author = {井出本康 and 磯英治 and 菊池淳 and 小浦延幸 and 石原宏 and C.-K.Loong and J.W.Richardson and Jr.},
title = {(Bi,La)4+x(Ti,Si)3-yO12の結晶構造、物性と強誘電体特性の関係},
journal = {第50回応用物理学関係連合講演会},
year = 2003,
}
@article{CTT100493007,
author = {大木博 and 石原宏},
title = {Pt/CrTiN/TiN/Ti下部電極上の Bi4-xLaxTi3O12薄膜に及ぼすFlash-Annealingの効果},
journal = {第50回応用物理学関係連合講演会},
year = 2003,
}
@article{CTT100492907,
author = {加藤一実 and 鈴木一行 and 符徳勝 and 西澤かおり and 三木健 and 石原宏},
title = {Bi4Ti3O12強誘電体薄膜の構造と特性に対するSiO2系添加物の効果},
journal = {第50回応用物理学関係連合講演会},
year = 2003,
}
@article{CTT100492903,
author = {井出本康 and 小浦延幸 and 石原宏 and J.W.Richardson and Jr. and C.-K.Loong},
title = {Bi4(Ti,Si)3O12の結晶構造、物性と強誘電体特性の関係および熱処理効果},
journal = {第50回応用物理学関係連合講演会},
year = 2003,
}
@article{CTT100492549,
author = {B-E.Park and H.Ishiwara},
title = {Effect of temperature raising rate in crystallization process on electrical properties of (Bi,La)4Ti3O12 films derived by sol-gel method},
journal = {10th European Meeting on Ferroelectricity},
year = 2003,
}
@article{CTT100492453,
author = {B-E.Park and H.Ishiwara},
title = {Formation of silicate-added (Bi,La)4Ti3O12 films on LaAlO3/Si structures},
journal = {15th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs},
year = 2003,
}
@article{CTT100492550,
author = {Y.Kawashima and H.Ishiwara},
title = {A novel chemical solution deposition method suitable for high-yield fabrication of 50-nm-thick SrBi2Ta2O9 capacitors},
journal = {Intern. Conf. on Solid State Devices and Materials},
year = 2003,
}
@article{CTT100492893,
author = {古川泰助 and 黒岩丈晴 and 藤崎芳久 and 佐藤剛 and 石原宏},
title = {MOCVD法によるＲu膜の強誘電体メモリ電極への適用検討(Ⅱ)},
journal = {第50回応用物理学関係連合講演会},
year = 2003,
}
@article{CTT100492900,
author = {會澤康治 and 石原宏},
title = {Pr-SrBi2Ta2O9薄膜の作製と電気的特性評価},
journal = {第50回応用物理学関係連合講演会},
year = 2003,
}
@article{CTT100492895,
author = {井出本康 and 高橋智之 and 小浦延幸 and 石原宏 and C.-K.Loong and J.W.Richardson and Jr.},
title = {Sr1-xBi2+x(Ta,Si)2O9-■δ(X=0,0.2)の結晶構造、物性と強誘電体特性},
journal = {第50回応用物理学関係連合講演会},
year = 2003,
}
@article{CTT100492896,
author = {岡本大輔 and 會澤康治 and 石原宏},
title = {Sr0.8Bi2.2Ta2.0O9キャパシタのRTA昇温レート依存性},
journal = {第50回応用物理学関係連合講演会},
year = 2003,
}
@article{CTT100547682,
author = {田渕良志明 and 田村哲朗 and 石原宏},
title = {Biバッファ層を用いたシリケート添加BLT薄膜の特性評価},
journal = {第64回応用物理学会学術講演会},
year = 2003,
}
@article{CTT100492421,
author = {H.Ishiwara},
title = {Recent progress in ferroelectric-gate FETs},
journal = {Mater. Res. Soc. Sympo. Proc.},
year = 2003,
}
@article{CTT100492420,
author = {S.Kikuchi and H.Ishiwara},
title = {Preparation of Bi2SiO5-SrBi2Ta2O9 ferroelectric thin films by RF magnetron sputtering},
journal = {Mater. Res. Soc. Sympo. Proc.},
year = 2003,
}
@article{CTT100492418,
author = {Y.Fujisaki and K.Iseki and H.Ishiwara and M.Mao and R.Bubber},
title = {Al2O3/Si3N4 stacked insulators for 0.1μm gate metal-oxide-semiconductor transistors realized by high-density Si3N4 buffer layers},
journal = {Appl. Phys. Lett.},
year = 2003,
}
@article{CTT100492529,
author = {T.Furukawa and T.Kuroiwa and Y.Fujisaki and T.Sato and H.Ishiwara},
title = {Leakage current suppression of Pt/ Bi4-XLaXTi3O12 /Ru capacitors by post-annealing of Ru films},
journal = {10th European Meeting on Ferroelectricity},
year = 2003,
}
@article{CTT100492532,
author = {S.Kikuchi and H.Ishiwara},
title = {Preparation of Si-added SrBi2Ta2O9 ferroelectric thin films by RF magnetron sputtering at high temperature},
journal = {10th European Meeting on Ferroelectricity},
year = 2003,
}
@article{CTT100492533,
author = {B-E.Park and H.Ishiwara},
title = {Fabrication and characterization of (Bi,La)4Ti3O12 films using LaAlO3 buffer layers for MFIS structures},
journal = {10th European Meeting on Ferroelectricity},
year = 2003,
}
@article{CTT100492534,
author = {Y.Kawashima and H.Ishiwara},
title = {Formation of ultrathin SrBi2Ta2O9 films using protective layers},
journal = {10th European Meeting on Ferroelectricity},
year = 2003,
}
@article{CTT100492546,
author = {K.Aizawa and H.Ishiwara},
title = {Low voltage operation of ferroelectric capacitors using Sr1-XPr2X/3Bi2Ta2O9 thin films},
journal = {10th European Meeting on Ferroelectricity},
year = 2003,
}
@article{CTT100481406,
author = {B-E.Park and H.Ishiwara},
title = {Formation of LaAlO3 films on Si(100) substrates using molecular beam deposition},
journal = {Jpn. J. Appl. Phys.},
year = 2003,
}
@article{CTT100547681,
author = {S.Yamamoto and T.Ishikawa and T.Fuchigami and T.Furukawa and K.Aizawa and H.Ohki and S.Kikuchi and B-E.Park and H.Hoko and T.Kuroiwa and H-S.Kim and B-J.Koo and H.Isjiwara and HIROSHI ISHIWARA},
title = {Fabrication of 1T2C-type ferroelectric memory array with sense amplifiers},
journal = {10th European Meeting on Ferroelectricity},
year = 2003,
}
@article{CTT100492905,
author = {田渕良志明 and 田村哲朗 and 鉾宏真 and 有本由弘 and 石原宏},
title = {シリケート添加BIT系強誘電体薄膜の特性評価},
journal = {第50回応用物理学関係連合講演会},
year = 2003,
}
@article{CTT100493006,
author = {田村哲朗 and 鉾宏真 and 石原宏},
title = {ゾルゲルPZTにおけるシリケート添加効果},
journal = {第50回応用物理学関係連合講演会},
year = 2003,
}
@article{CTT100493016,
author = {鉾宏真 and 石原宏},
title = {ゾルゲル法で形成したBi4-xLaxTi3O12強誘電体薄膜の特性改善},
journal = {第50回応用物理学関係連合講演会},
year = 2003,
}
@article{CTT100493082,
author = {田村哲朗 and 鉾宏真 and 有本由弘 and 石原宏},
title = {シリケート添加ゾルゲルPZTの特性評価},
journal = {第64回応用物理学会学術講演会},
year = 2003,
}
@article{CTT100479371,
author = {大木博 and 石原宏},
title = {最適化された下部電極上でのBi4-xLaxTi3O12薄膜の特性改善},
journal = {第49回応用物理学関係連合講演会},
year = 2002,
}
@article{CTT100476810,
author = {T.Kijima and H.Ishiwara},
title = {Ultra-thin ferroelectric films modified by Bi2SiO5},
journal = {Ferroelectrics},
year = 2002,
}
@article{CTT100476812,
author = {S-K.Kang and H.Ishiwara},
title = {Memory retention characteristics of MFMIS structure using SBT and Al2O3 buffer layer},
journal = {Ferroelectrics},
year = 2002,
}
@article{CTT100476815,
author = {X.Wang and H.Ishiwara},
title = {Surface decoration for sol-gel derived ferroelectric Pb(Zr0.52Ti0.48)O3 thin films},
journal = {Key Engineering Materials},
year = 2002,
}
@article{CTT100476816,
author = {S.Ohmi and S.Akama and A.Kikuchi and I.Kashiwagi and C.Ohshima and J.Taguchi and H.Yamamoto and K.Sato and M.Takeda and H.Ishiwara and H.Iwai},
title = {Rare earth metal oxides for high-k gate insulator},
journal = {Electrochem. Soc. Proc. (9th Intern. Sympo. on Silicon Materials Science and Technology)},
year = 2002,
}
@article{CTT100476817,
author = {T.Kijima and H.Ishiwara},
title = {Si-substituted ultrathin ferroelectric films},
journal = {Jpn. J. Appl. Phys},
year = 2002,
}
@article{CTT100476819,
author = {H.Ishiwara and S.Yamamoto},
title = {A novel data writing method in a 1T2C-type ferroelectric memory},
journal = {Facta Universitatis (Nis) - Elec. Energ},
year = 2002,
}
@article{CTT100476820,
author = {T.Tamura and Y.Arimoto and H.Ishiwara},
title = {A new circuit simulation model of ferroeletric capacitors},
journal = {Jpn. J. Appl. Phys},
year = 2002,
}
@article{CTT100477962,
author = {S.Ogasawara and H.Ishiwara},
title = {Fabrication and characterization of 1T2C-type ferroelectric memory cell with local interconnections},
journal = {Jpn. J. Appl. Phys.},
year = 2002,
}
@article{CTT100478099,
author = {S-K.Kang and H.Ishiwara},
title = {Characteristics of LaAlO3 as insulating buffer layers of ferroelectric-gate FETs},
journal = {Jpn. J. Appl. Phys.},
year = 2002,
}
@article{CTT100478104,
author = {T.Kijima and Y.Kawashima and Y.Idemoto and H.Ishiwara},
title = {Effect of high-pressure oxygen annealing on Bi2SiO5-added ferroelectric thin films},
journal = {Jpn. J. Appl. Phys.},
year = 2002,
}
@article{CTT100478107,
author = {Y.Fujisaki and H.Ishiwara},
title = {Al2O3/Si3N4 buffer layer for high performance MFIS (metal-ferroelectric-insulator-semiconductor) transistors},
journal = {Mater. Res. Soc. Sympo. Proc.},
year = 2002,
}
@article{CTT100478112,
author = {X.Wang and H.Ishiwara},
title = {Properties of ferroelectric Pb(Zr,Ti)O3-SiO2-B2O3 glass-ceramic thin films derived by sol-gel method},
journal = {Ferroelectrics},
year = 2002,
}
@article{CTT100478115,
author = {K.Aizawa and H.Ishiwara},
title = {Memory effect in ferroelectric-gate field effect transistors using 0.1-μm-thick-silicon-on-insulator substrates},
journal = {Ferroelectrics},
year = 2002,
}
@article{CTT100478154,
author = {T.Sato and T.Kuroiwa and K.Sugawara and H.Ishiwara},
title = {Preparation of Bi3.25+xLa0.75Ti3O12+y film on ruthenium electrodes},
journal = {Jpn. J. Appl. Phys},
year = 2002,
}
@article{CTT100478156,
author = {S-K.Kang and H.Ishiwara},
title = {Data retention characteristics of metal-ferroelectric-metal-insulator-semiconductor diodes with SrBi2Ta2O9 ferroelectrics and Al2O3 buffer layers},
journal = {Jpn. J. Appl. Phys},
year = 2002,
}
@article{CTT100478164,
author = {Y.Fujisaki and S.Ogasawara and H. Ishiwara},
title = {Advanced MFIS Structure with Al2O3/Si3N4 Stacked Buffer Layer},
journal = {7th Intern. Sympo. on Ferroic Domains and Mesoscopic Structures},
year = 2002,
}
@article{CTT100478165,
author = {Y.Kawashima and T.Kijima and H.Ishiwara},
title = {Orientation control of (Bi,La)4Ti3O12 films by addition of various silicates and germanates},
journal = {2002 Intern. Conf. on Solid State Devices and Materials, Nagoya},
year = 2002,
}
@article{CTT100478168,
author = {S.Yamamoto and H-S.Kim and H.Ishiwara},
title = {Proposal of a planar 8F2 1T2C-type ferroelectric memory cell},
journal = {2002 Intern. Conf. on Solid State Devices and Materials, Nagoya},
year = 2002,
}
@article{CTT100478173,
author = {S.Ohmi and I.Kashiwagi and C.Ohshima and J.Taguchi and H.Yamamoto and J.Tonotani and H.Ishiwara and H.Iwai},
title = {Electrical characteristics of rare earth gate oxides improved by chemical oxide and long low temperature annealing},
journal = {2002 Intern. Conf. on Solid State Devices and Materials, Nagoya},
year = 2002,
}
@article{CTT100478174,
author = {B-E.Park and H.Ishiwara},
title = {Formation of BLT films on Si(100) structure using LaAlO3 buffer layers},
journal = {6th Euro. Conf. on Applications of Polar Dielectrics, Averio},
year = 2002,
}
@article{CTT100478175,
author = {K.Aizawa and H.Ishiwara},
title = {Characterization of BLT film formed on Pt electrode with (Cr,Ti)N/TiN/Ti barrier layers},
journal = {6th Euro. Conf. on Applications of Polar Dielectrics, Averio},
year = 2002,
}
@article{CTT100478177,
author = {Y.Fujisaki and O.Ogasawara and K.Aizawa and H.Ishiwara},
title = {MFIS FET with ultra thin Si3N4 buffer layer made by atomic nitrogen radicals.},
journal = {Intern. Joint Conf. on Application of Ferroeletrics, Nara},
year = 2002,
}
@article{CTT100478178,
author = {B-E.Park and H.Ishiwara},
title = {Fabrication of MFIS diodes using (Bi,La)4Ti3O12 and LaAlO3 buffer layers},
journal = {Intern. Joint Conf. on Application of Ferroeletrics, Nara},
year = 2002,
}
@article{CTT100478179,
author = {T.Tamura and Y.Arimoto and H.Ishiwara},
title = {Simulation of retention proprety of ferroeletric memories},
journal = {Intern. Joint Conf. on Application of Ferroeletrics, Nara},
year = 2002,
}
@article{CTT100478182,
author = {S-K.Kang and H.Ishiwara},
title = {Characteristics of LaAlO3 as insulating buffer latyers of ferroelectirc-gate FETs},
journal = {Intern. Joint Conf. on Application of Ferroeletrics, Nara},
year = 2002,
}
@article{CTT100478183,
author = {S.Ogasawara and H.Ishiwara},
title = {Fabricatrion and characterization of 1T2C-type ferroeletric memory cell with local interconnection},
journal = {Intern. Joint Conf. on Application of Ferroeletrics, Nara},
year = 2002,
}
@article{CTT100478324,
author = {T.Kijima and H.Ishiwara},
title = {New line of solid solution systems of oxide ferroelectrics},
journal = {Fall Meeting of Mater. Res. Soc.},
year = 2002,
}
@article{CTT100478326,
author = {H.Ishiwara},
title = {Recent progress in ferroelectric-gate FETs},
journal = {Fall Meeting of Mater. Res. Soc.},
year = 2002,
}
@article{CTT100478329,
author = {H.Ishiwara},
title = {Recent progress of materials and device structures in ferroelectric memories},
journal = {Intern. Semiconductor Technology Conf. 2002},
year = 2002,
}
@article{CTT100478332,
author = {H.Ishiwara and S.Yamamoto},
title = {A novel data writing method in a 1T2C-type ferroelectric memory},
journal = {23rd Intern. Conf. on Microelectronics, Nis},
year = 2002,
}
@article{CTT100478333,
author = {H.Ishiwara},
title = {Recent progress of ferroelectric memory},
journal = {Workshop on Frontiers in Electronics, St.Croix},
year = 2002,
}
@article{CTT100478335,
author = {S.Kikuchi and H.Ishiwara},
title = {Preparation of Bi2SiO5-SrBi2Ta2O9 ferroelectric thin films by magnetron sputtering},
journal = {Fall Meeting of Mater. Res. Soc.},
year = 2002,
}
@article{CTT100478339,
author = {Y.Fujisaki and K.Iseki and H.Ishiwara},
title = {Pt/Bi3.25La0.75Ti3O12/Al2O3/Si3N4/Si MFIS structure with long retention characteristics},
journal = {Fall Meeting of Mater. Res. Soc.},
year = 2002,
}
@article{CTT100478341,
author = {B-J.Koo and H.Ishiwara},
title = {Characteristics of paired Bi(4-x)LaxTi3O12 capacitors array suitable for 1T2C-type FeRAM},
journal = {Intern. Joint Conf. on Application of Ferroeletrics, Nara},
year = 2002,
}
@article{CTT100478344,
author = {Y.Kawashima and K.Kijima and H.Ishiwara},
title = {Orientation control of (Bi,La)4Ti3O12 thin films by addition of silicates and germanates},
journal = {Intern. Joint Conf. on Application of Ferroeletrics, Nara},
year = 2002,
}
@article{CTT100478346,
author = {T.Kijima and H.Ishiwara},
title = {A new class of ferroeletircs suitable for 0.5V operation of non-volatile randon access memory},
journal = {Intern. Joint Conf. on Application of Ferroeletrics, Nara},
year = 2002,
}
@article{CTT100478347,
author = {Y.Fujisaki and H.Ishiwara},
title = {Al2O3/Si3N4 stacked insulator for advanced MOS FETs},
journal = {Intern. Joint Conf. on Application of Ferroeletrics, Nara},
year = 2002,
}
@article{CTT100478349,
author = {S.Yamamot and H.Ishiwara},
title = {Analysis of non-volatile latch circuits with ferroelectric-gate field effect transistors for low power and low voltage operation},
journal = {23rd Intern. Conf. on Micro-electronics, Nis},
year = 2002,
}
@article{CTT100478351,
author = {Y.Fujisaki and H.Ishiwara},
title = {The interface quality control in MFIS structures with the use of highly stable Si3N4 buffer layer},
journal = {ONR Workshop on Ferroelectric Semiconductor Interfaces, Kona},
year = 2002,
}
@article{CTT100478352,
author = {H.Ishiwara and B-E.Park and S-K.Kang},
title = {MFIS devices with Al2O3 and LaAlO3 buffer layer},
journal = {ONR Workshop on Ferroelectric Semiconductor Interfaces, Kona},
year = 2002,
}
@article{CTT100478353,
author = {加藤一実 and 石原宏},
title = {ビスマス系層状強誘電体におけるSiO2系添加物の効果},
journal = {第21回電子材料研究討論会},
year = 2002,
}
@article{CTT100478354,
author = {石原宏},
title = {強誘電体、High-kゲート薄膜用Al2O3, LaAlO3耐酸化バリア膜},
journal = {応用物理学会結晶工学分科会},
year = 2002,
}
@article{CTT100478366,
author = {石原宏},
title = {強誘電体メモリの最近の動向},
journal = {日本学術振興会},
year = 2002,
}
@article{CTT100478367,
author = {石原宏},
title = {次世代強誘電体メモリプロジェクト},
journal = {新機能素子シンポジウム},
year = 2002,
}
@article{CTT100478368,
author = {石原宏 and 木島健},
title = {新規強誘電体メモリ用薄膜の作製},
journal = {第31回応用物理学会スクールB},
year = 2002,
}
@article{CTT100478370,
author = {藤崎芳久 and 石原宏},
title = {高誘電率バッファー層を用いたMFIS構造の界面特性},
journal = {電気学会},
year = 2002,
}
@article{CTT100478371,
author = {山本修一郎 and 井上進 and 石原宏},
title = {不揮発性強誘電体ラッチ回路の新構成法と低電圧動作解析},
journal = {電子情報通信学会},
year = 2002,
}
@article{CTT100478372,
author = {小笠原悟 and 石原宏},
title = {1T2C型強誘電体メモリの作製及び評価},
journal = {電子情報通信学会},
year = 2002,
}
@article{CTT100478437,
author = {井上進 and 石原宏},
title = {1T2C型強誘電体メモリアレイの特性評価},
journal = {第63回応用物理学会学術講演会},
year = 2002,
}
@article{CTT100478439,
author = {金 and 山本修一郎 and 石原宏},
title = {1T2C型強誘電体メモリの高集積化とSPICEによる動作解析},
journal = {第63回応用物理学会学術講演会},
year = 2002,
}
@article{CTT100478455,
author = {井関邦江 and 藤崎芳久 and 石原宏},
title = {Al2O3/Si3N4非晶質バッファー層上の(Bi,La)4Ti3O12配向制御},
journal = {第63回応用物理学会学術講演会},
year = 2002,
}
@article{CTT100478459,
author = {會澤康治 and 小林宗太 and 石原宏},
title = {SBT系強誘電体／Al2O3/Si構造MFISダイオードの電気的 特性評価},
journal = {第63回応用物理学会学術講演会},
year = 2002,
}
@article{CTT100478460,
author = {古川泰助 and 黒岩丈晴 and 藤崎芳久 and 佐藤剛彦 and 石原宏},
title = {MOCVD法によるRu膜の強誘電体メモリ電極への適用検討},
journal = {第63回応用物理学会学術講演会},
year = 2002,
}
@article{CTT100478464,
author = {大木博 and 石原宏},
title = {Pt/CrTiN/TiN/Ti下部電極上のBi4-XLaXTi3O12薄膜の 強誘電体特性},
journal = {第63回応用物理学会学術講演会},
year = 2002,
}
@article{CTT100479241,
author = {具本宰 and 石原宏},
title = {BLTキャパシタ対を持つ1T2C型強誘電体メモリの特性},
journal = {第63回応用物理学会学術講演会 },
year = 2002,
}
@article{CTT100479243,
author = {朴炳垠 and 石原宏},
title = {LaAlO3/Si構造上へのシリケート添加(Bi,La)4Ti3O12薄膜の形成},
journal = {第63回応用物理学会学術講演会 },
year = 2002,
}
@article{CTT100479244,
author = {川島良仁 and 木島健 and 石原宏},
title = {Si化合物添加によるSBT強誘電体薄膜の特性変化},
journal = {第63回応用物理学会学術講演会 },
year = 2002,
}
@article{CTT100479246,
author = {井出本康 and 宮原孝弘 and 小浦延幸 and 木島健 and 石原宏},
title = {Bi3.25La0.75(Ti,Si)3O12の結晶構造、物性と強誘電体特性},
journal = {第63回応用物理学会学術講演会 },
year = 2002,
}
@article{CTT100479366,
author = {田村哲朗 and 有本由弘 and 石原宏},
title = {消極を考慮した強誘電体キャパシタモデル},
journal = {第49回応用物理学関係連合講演会 },
year = 2002,
}
@article{CTT100479367,
author = {X.Wang and H.Ishiwara},
title = {Properties of ferroelecric (1-x)SrBi2Ta2O9-xBi4Ti3O12 solid-solution thin films derived by sol-gel method},
journal = {第49回応用物理学関係連合講演会 },
year = 2002,
}
@article{CTT100479368,
author = {西岡浩 and 石原宏},
title = {スパッタSrBi2Ta2O9強誘電体薄膜のSr組成制御による強誘電特性改善と低温結晶化},
journal = {第49回応用物理学関係連合講演会},
year = 2002,
}
@article{CTT100479369,
author = {川島良仁 and 木島健 and 石原宏},
title = {添加剤によりBIT系強誘電体薄膜の配向制御},
journal = {第49回応用物理学関係連合講演会 },
year = 2002,
}
@article{CTT100479370,
author = {朴炳垠 and 石原宏},
title = {ゾルゲル法によるLaAlO3/Si構造上へのBLT(Bi,La)4Ti3O12薄膜の形成},
journal = {第49回応用物理学関係連合講演会},
year = 2002,
}
@article{CTT100479379,
author = {康昇国 and 石原宏},
title = {強誘電体ゲートFET用LaAlO3バッファ層の特性評価},
journal = {第49回応用物理学関係連合講演会},
year = 2002,
}
@article{CTT100479395,
author = {藤崎芳久 and 小笠原悟 and 石原宏},
title = {ALD-Al2O3/radical-Si3N4高誘電率バッファー層を用いたMFIS構造},
journal = {第49回応用物理学関係連合講演会},
year = 2002,
}
@article{CTT100479398,
author = {會澤康治 and 川島良仁 and 石原宏},
title = {Charge pumping法による強誘電体/Si構造の界面準位密度評価},
journal = {第49回応用物理学関係連合講演会},
year = 2002,
}
@article{CTT100479413,
author = {佐藤剛彦 and 黒岩丈晴 and 石原宏},
title = {プラグ構造をもつMFMISデバイスへのBLT膜への適用検討},
journal = {第49回応用物理学関係連合講演会 },
year = 2002,
}
@article{CTT100479414,
author = {小笠原悟 and 石原宏},
title = {局所配線を用いた1T2C型強誘電体メモリ},
journal = {第49回応用物理学関係連合講演会 },
year = 2002,
}
@article{CTT100479418,
author = {具本宰 and 石原宏},
title = {1T2C型強誘電体メモリ用キャパシタ対の作製とデータディスターブ特性の評価},
journal = {第49回応用物理学関係連合講演会 },
year = 2002,
}
@article{CTT100479419,
author = {山本修一郎 and 石原宏},
title = {FETのゲート容量を考慮した1T2C型強誘電体メモリの新規書込み法の提案と動作解析},
journal = {第49回応用物理学関係連合講演会 },
year = 2002,
}
@article{CTT100479433,
author = {貴志真士 and 藤崎芳久 and 井関邦江 and 石原宏 and 徳光永輔},
title = {(Sm,Sr)0.8Bi2.2Ta2O9を用いたMFIS構造の作成と評価},
journal = {第63回応用物理学会学術講演会},
year = 2002,
}
@article{CTT100479436,
author = {小林宗太 and 會澤康治 and 石原宏},
title = {窒素雰囲気中アニールによるBLT系強誘電体/Al2O3/Siダイオードの作製と電気的特性},
journal = {第63回応用物理学会学術講演会},
year = 2002,
}
@article{CTT100479438,
author = {山本修一郎 and 金 and 石原宏},
title = {1T2C型強誘電体メモリアレイにおける書込み・読み出しデータディスターブ低減法},
journal = {第63回応用物理学会学術講演会 },
year = 2002,
}
@article{CTT100479439,
author = {康昇国 and 石原宏},
title = {LaAlO3ゲート絶縁膜をバッファー層として作製したMFMIS構造の評価},
journal = {第63回応用物理学会学術講演会 },
year = 2002,
}
@article{CTT100479440,
author = {藤崎芳久 and 井関邦江 and 石原宏},
title = {ALD-Al2O3/radical-Si3N4高誘電率バッファー層を用いたMFIS構造},
journal = {第63回応用物理学関係連合講演会},
year = 2002,
}
@article{CTT100479450,
author = {菊地真 and 石原宏},
title = {RFマグトロンスパッタ法によるBi2SiO5-SrBi2Ta2O9強誘電体薄膜の作製},
journal = {第63回応用物理学関係連合講演会},
year = 2002,
}
@article{CTT100479997,
author = {Y.Fujisaki and K.Iseki and H.Ishiwara},
title = {Al2O3/Si3N4 stacked insulator for advanced MOS devices},
journal = {Fall Meeting of Mat. Res. Soc.},
year = 2002,
}
@article{CTT100492560,
author = {X.Wang and H.Ishiwara},
title = {Low-temperature synthesis of SrBi2Ta2O9 thin films with Bi2SiO5-containing seed layers},
journal = {Jpn. J. Appl. Phys},
year = 2002,
}
@article{CTT100478450,
author = {田村 哲朗 and 鉾 宏真 and 有本 由弘 and 石原 宏},
title = {ゾルゲルPZT膜におけるシリケート添加効果},
journal = {第63回応用物理学会学術講演会},
year = 2002,
}
@article{CTT100455773,
author = {E.Tokumitsu and Takeaki Isobe and Takeshi Kijima and Hiroshi Ishiwara},
title = {Fabrication and Characterization of Metal- Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) Structures Using Ferroelectric (Bi,La)4Ti3O12 Films},
journal = {Jpn. J. Appl. Phys},
year = 2001,
}
@article{CTT100455716,
author = {Eisuke Tokumitsu and Kojiro Okamoto and Hiroshi Ishiwara},
title = {Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor(MFMIS)-Field-Effect-Transistors(FETs) Using Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si Structures},
journal = {Jpn. J. Appl. Phys.},
year = 2001,
}
@article{CTT100455717,
author = {S.Imada and E.Tokumitsu and H.Ishiwara},
title = {Ferroelectricity of YMnO3 Thin Films on Pt(111)/ Al2O3(0001)and Pt(111)/Y2O3(111)/Si(111) structures grown by Molwcular Beam Epitaxy},
journal = {Jpn. J. Appl. Phys.},
year = 2001,
}
@article{CTT100455718,
author = {Bum-Ki Moon and Hiroshi Ishiwara and E.Tokumitsu and M.Yoshimoto},
title = {Characteristics of ferroelectric Pb(Zr,Ti)O3 films epitaxialy grown on CeO2(111)/Si(111) substrates},
journal = {Thin Solid Films},
year = 2001,
}
@article{CTT100462396,
author = {E.Tokumitsu and K.Okamoto and H.Ishiwara},
title = {Low voltage operation of nonvolatile metal-ferroelectric-metal-insulator-semiconductor(MFMIS)-field-effect-transistors(FETs) using Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures},
journal = {Jpn. J. Appl.Phys.},
year = 2001,
}
@article{CTT100455583,
author = {S-M.Yoon and H.Ishiwara},
title = {Memory operations of 1T2C-type ferroelectric memory cell with excellent data retention characteristics},
journal = {IEEE Trans. on Electron Devices},
year = 2001,
}
@article{CTT100462400,
author = {S.Imada and T.Kuraoka and E.Tokumitsu and H.Ishiwara},
title = {Ferroelectricity of YMnO3 thin films on Pt(111)/Al2O3(0001) and Pt(111)/Y2O3(111)/Si(111) structures grown by molecular beam epitaxy},
journal = {Jpn. J. Appl. Phys.},
year = 2001,
}
@article{CTT100462399,
author = {Y.Fujisaki and T.Kijima and H.Ishiwara},
title = {High-performance metal-ferroelectric-insulator-semiconductor structure with a damage-free and hydrogen-free sillicon-nitride buffer layer},
journal = {Appl. Phys. Lett.},
year = 2001,
}
@article{CTT100462398,
author = {X.Wang and H.Ishiwara},
title = {Structural and electrical properties of ferroelectric PbZr1-xTixO3-SiO2 glass-ceramic thin films derived by the sol-gel method},
journal = {Jpn. J. Appl. Phys.},
year = 2001,
}
@article{CTT100462397,
author = {H.Ishiwara},
title = {Current status and prospects of FET-type ferroelectric memories},
journal = {J. Semicon. Tech. & Sci.},
year = 2001,
}
@article{CTT100462395,
author = {S.Yamamoto and T.Kato and H.Ishiwara},
title = {A novel simulation program with integrated circuit emphasis(SPICE) model of ferroelectric capacitors using Schmitt-trigger circuit},
journal = {Jpn. J. Appl. Phys.},
year = 2001,
}
@article{CTT100462222,
author = {會澤康治 and 石原宏},
title = {薄膜SOI基板上に作製した強誘電体ゲートFETの評価},
journal = {第48回応用物理学関係連合講演会},
year = 2001,
}
@article{CTT100462223,
author = {藤崎芳久 and 木島健 and 石原宏},
title = {MFISトランジスタ用水素フリーSi3N4薄膜},
journal = {第48回応用物理学関係連合講演会},
year = 2001,
}
@article{CTT100462224,
author = {藤崎芳久 and 木島健 and 石原宏},
title = {La添加Bi4Ti3O12薄膜中でのLaの結合状態},
journal = {第48回応用物理学関係連合講演会},
year = 2001,
}
@article{CTT100462225,
author = {小笠原悟 and 尹聖民 and 石原宏},
title = {1T2C型強誘電体ゲートFETの動作確認},
journal = {第48回応用物理学関係連合講演会},
year = 2001,
}
@article{CTT100462226,
author = {井上進 and 山本修一郎 and 石原宏},
title = {強誘電体ゲートFETを用いた不揮発性ラッチ回路の動作},
journal = {第48回応用物理学関係連合講演会},
year = 2001,
}
@article{CTT100462227,
author = {康昇国 and 石原宏},
title = {SrBi2Ta2O9とAl2O3 バッファー層とを用いたMFMIS構造の評価},
journal = {第48回応用物理学関係連合講演会},
year = 2001,
}
@article{CTT100462228,
author = {S.Ogasawara and S-M.Yoon and H.Ishiwara},
title = {Analysis of 1T2C-type ferroelectric memory cell in read-out operation},
journal = {13th Inern. Sympo. on Integrated Ferroelectrics, Colorado Springs},
year = 2001,
}
@article{CTT100462229,
author = {N.Ogata and H.Ishiwara},
title = {A model for high frequency C-V characteristics of ferroelelctric capacitors},
journal = {13th Inern. Sympo. on Integrated Ferroelectrics, Colorado Springs},
year = 2001,
}
@article{CTT100462230,
author = {山本修一郎 and 平山智久 and 石原宏},
title = {強誘電体キャパシタシミュレーション支援LSIの設計},
journal = {電子情報通信学会2001年総合大会講演論文集・エレクトロニクス２ (2001)},
year = 2001,
}
@article{CTT100462241,
author = {K.Aizawa and H.Ishiwara},
title = {Memory effect in ferroelectric-gate field effect transistors using 0.1μm-thick silicon-on-insulator substrates},
journal = {10th Intern. Meeting on Ferroelectrics, Madrid},
year = 2001,
}
@article{CTT100462242,
author = {Y.Fujisaki and T.Kijima and K.Aizawa and S.Ogasawara and H.Ishiwara},
title = {Novel metal-ferroelectric-insulator-semiconductor transistor with long retention characteristics under low voltage operation},
journal = {10th International Meeting on Ferroelectrics, Madrid},
year = 2001,
}
@article{CTT100462243,
author = {S.K.Kang and H.Ishiwara},
title = {Memory retention characteristics of MFMIS structure using SBT and Al2O3 buffer layer},
journal = {10th Intern. Meeting on Ferroelectrics, Madrid},
year = 2001,
}
@article{CTT100462244,
author = {會澤康治 and 川島良仁 and 木島健 and 石原宏},
title = {新規強誘電体材料を用いた強誘電体ゲートFET},
journal = {第62回応用物理学会学術講演会},
year = 2001,
}
@article{CTT100462245,
author = {藤崎芳久 and 石原宏},
title = {MFISトランジスタ用Al2O3/radical-Si3N4多層構造膜},
journal = {第62回応用物理学会学術講演会},
year = 2001,
}
@article{CTT100462246,
author = {康昇国 and 石原宏},
title = {Al2O3ゲート絶縁膜をバッファー層として用いたMFMIS構造の評価},
journal = {第62回応用物理学会学術講演会},
year = 2001,
}
@article{CTT100462247,
author = {山本修一郎 and 石原宏},
title = {強誘電体を用いた不揮発性CMOSラッチ回路の新構成法と低電圧動作解析},
journal = {第62回応用物理学会学術講演会},
year = 2001,
}
@article{CTT100462248,
author = {木島健 and 川島良仁 and 石原宏},
title = {新規強誘電体材料へのポストアニール効果},
journal = {第62回応用物理学会学術講演会},
year = 2001,
}
@article{CTT100479236,
author = {B-E.Park and H. Ishiwara},
title = {Fabrication of MFIS diodes using sol-gel derived SBT film and LaAlO3 buffer layers},
journal = {Integrated Ferroelectrics},
year = 2001,
}
@article{CTT100462249,
author = {小笠原悟 and 石原宏},
title = {局所配線を用いた1T2C型強誘電体ゲートFETの作製 及び評価},
journal = {第62回応用物理学会学術講演会},
year = 2001,
}
@article{CTT100479235,
author = {S.Ogasawara and S-M.Yoon and H.Ishiwara},
title = {Analysis of read-out operation in 1T2C-type ferroelectric memory cell},
journal = {Integrated Ferroelectrics},
year = 2001,
}
@article{CTT100479234,
author = {S-M. Yoon and H. Ishiwara},
title = {Data disturb characteristics of 1T2C ferroelectric memory array},
journal = {Integrated Ferroelectrics},
year = 2001,
}
@article{CTT100479233,
author = {T.Tamura and Y.Arimoto and H.Ishiwara},
title = {Modeling of dynamic response of ferroelectric capacitors},
journal = {Integrated Ferroelectrics},
year = 2001,
}
@article{CTT100479232,
author = {T.Sato and K.Sugawara and T.Kijima and H.Ishiwara},
title = {Formation of ferroelectric thin films on ruthenium electrodes},
journal = {Integrated Ferroelectrics},
year = 2001,
}
@article{CTT100478225,
author = {E.Tokumitsu and T.Isobe and T.Kijima and H.Ishiwara},
title = {Preparation and characterization of (Bi,La)4Ti3O12 films by the sol-gel technique},
journal = {Mater. Res. Soc. Sympo. Proc.},
year = 2001,
}
@article{CTT100462393,
author = {S-M.Yoon and H.Ishiwara},
title = {Write and read-out operation of novel 1T2C-type ferroelectric memory cells with an array structure},
journal = {Jpn. J. Appl. Phys.},
year = 2001,
}
@article{CTT100462394,
author = {T.Kijima and Y.Fujisaki and H.Ishiwara},
title = {Fabrication and characterization of Pt/(Bi,La)4Ti3O12/Si3N4/Si metal-ferroelectric-insulator-semiconductor structure for FET-type ferroelectric memory applications},
journal = {Jpn. J. Appl. Phys.},
year = 2001,
}
@article{CTT100463428,
author = {藤井俊成 and 舟窪浩 and 石原宏},
title = {ダブルアルコキシド原料を用いた溶液気化MOCVD法によるSrBi2Ta2O9薄膜の作製(2)},
journal = {第48回応用物理学関係連合講演会},
year = 2001,
}
@article{CTT100463418,
author = {王旭升 and 石原宏},
title = {Properties of ferroelectric Pb(Zr1-xTi)O3-SiO2-B2O3 glass-ceramic thin films derived by sol-gel method},
journal = {第48回応用物理学関係連合講演会},
year = 2001,
}
@article{CTT100463417,
author = {朴炳垠 and 石原宏},
title = {MBE法によるSi基板上へのLaAlO3膜の作製},
journal = {第48回応用物理学関係連合講演会},
year = 2001,
}
@article{CTT100463416,
author = {森岡洋 and 石原宏},
title = {(Bi,Ta)4Ti3O12薄膜形成用ゾルゲル塗布溶液の合成と薄膜評価},
journal = {第48回応用物理学関係連合講演会},
year = 2001,
}
@article{CTT100463415,
author = {西岡浩 and 石原宏},
title = {RFマグネトロンスパッタ法によるSrBi2Ta2O9強誘電体薄膜の作製},
journal = {第48回応用物理学関係連合講演会},
year = 2001,
}
@article{CTT100463414,
author = {佐藤剛彦 and 須賀原和之 and 石原宏},
title = {Ru電極上へのBi3.25+xLa0.75Ti3O12膜形成},
journal = {第48回応用物理学関係連合講演会},
year = 2001,
}
@article{CTT100463413,
author = {田村哲朗 and 有本由弘 and 石原宏},
title = {強誘電体キャパシタの分極反転速度を取り込んだシミュレーションモデル},
journal = {第48回応用物理学関係連合講演会},
year = 2001,
}
@article{CTT100463373,
author = {平山智久 and 山本修一郎 and 石原宏},
title = {1T2C型強誘電体メモリの周辺回路の設計},
journal = {電子情報通信学会2001年エレクトロニクスソサイエティ大会講演論文集２},
year = 2001,
}
@article{CTT100463365,
author = {大島亮介 and 大見俊一郎 and 朴炳垠 and 石原宏 and 岩井洋},
title = {電子ビーム蒸着法によるZrO2薄膜成膜時における酸素導入の効果},
journal = {第62回応用物理学会学術講演会},
year = 2001,
}
@article{CTT100463364,
author = {朴炳垠 and 石原宏},
title = {MBE法によるSi基板上へのLaAlO3膜の作製},
journal = {第62回応用物理学会学術講演会},
year = 2001,
}
@article{CTT100463363,
author = {木島健 and 田村哲朗 and 石原宏},
title = {新規強誘電体材料の大面積成膜},
journal = {第62回応用物理学会学術講演会},
year = 2001,
}
@article{CTT100463362,
author = {木島健 and 石原宏},
title = {強誘電体薄膜への各種誘電体添加効果},
journal = {第62回応用物理学会学術講演会},
year = 2001,
}
@article{CTT100463361,
author = {木島健 and 川島良仁 and 石原宏},
title = {新規強誘電体材料へのポストアニール効果},
journal = {第62回応用物理学会学術講演会},
year = 2001,
}
@article{CTT100463360,
author = {田村哲朗 and 有本由弘 and 石原宏},
title = {強誘電体の分極反転速度を考慮したデバイス動作評価},
journal = {第62回応用物理学会学術講演会},
year = 2001,
}
@article{CTT100463359,
author = {具本宰 and 石原宏},
title = {異なる膜厚を持つ1T2C型強誘電体メモリ用キャパシタの形成},
journal = {第62回応用物理学会学術講演会},
year = 2001,
}
@article{CTT100463358,
author = {佐藤剛彦 and 黒岩丈晴 and 石原宏},
title = {Ru電極上Bi3.25La0.75Ti3O12+y膜の減圧中での結晶化},
journal = {第62回応用物理学会学術講演会},
year = 2001,
}
@article{CTT100463357,
author = {西岡浩 and 石原宏},
title = {核発生層によるスパッタSrBi2Ta2O9強誘電体薄膜の強誘電性特性改善},
journal = {第62回応用物理学会学術講演会},
year = 2001,
}
@article{CTT100463336,
author = {具本宰 and 尹聖民 and 石原宏},
title = {SPICE解析による強誘電体メモリアレイにおける読み出し方法の検討},
journal = {第48回応用物理学関係連合講演会},
year = 2001,
}
@article{CTT100463335,
author = {小篠団 and 會澤康治 and 石原宏},
title = {SOI基板上へのMFISFET型マトリックス構造の作製と評価},
journal = {第48回応用物理学関係連合講演会},
year = 2001,
}
@article{CTT100463334,
author = {小粥光洋 and 田村哲朗 and 有本由弘 and 石原宏},
title = {強誘電体ゲートFETの減分極電界の影響},
journal = {第48回応用物理学関係連合講演会},
year = 2001,
}
@article{CTT100463333,
author = {木島健 and 石原宏},
title = {新規強誘電体薄膜の低温成長と表面モフォロジー},
journal = {第48回応用物理学関係連合講演会},
year = 2001,
}
@article{CTT100463332,
author = {尹聖民 and 小笠原悟 and 石原宏},
title = {1T2C型強誘電体メモリアレイにおける動作特性の評価},
journal = {第48回応用物理学関係連合講演会 },
year = 2001,
}
@article{CTT100463331,
author = {対馬明人 and 尹聖民 and 小笠原悟 and 石原宏},
title = {液体霧化成膜法を用いたMFMOS構造の作製},
journal = {第48回応用物理学関係連合講演会 },
year = 2001,
}
@article{CTT100463284,
author = {X.Wang and H.Ishiwara},
title = {Surface decoration for the sol-gel- derived ferroelectric Pb(Zr0.52Ti0.48)O3thin films},
journal = {2nd Asian Meeting on Electronics Kawasaki},
year = 2001,
}
@article{CTT100463191,
author = {B.J.Koo and H.Ishiwara},
title = {Formation of paired Bi(4-x)LaxTi3O12 capacitors suitable for 1T2C-typed ferroelectric memory},
journal = {1st Intern. Meeting on Ferroelectric Random Access Memories, Gotemba},
year = 2001,
}
@article{CTT100463044,
author = {石原宏},
title = {FET型強誘電体メモリの現状},
journal = {第61回半導体・集積回路技術シンポジウム予稿集},
year = 2001,
}
@article{CTT100463043,
author = {石原宏},
title = {学習する半導体回路－強誘電体を用いた自己学習回路},
journal = {第62回応用物理学会学術講演会},
year = 2001,
}
@article{CTT100463041,
author = {T.Kijima and H.Ishiwara},
title = {Ultra-thin ferroelectric film with new structure},
journal = {10th Intern. Meeting of Ferroelectricity, Madrid},
year = 2001,
}
@article{CTT100463040,
author = {X.Wang and H.Ishiwara},
title = {Properties of ferroelectric Pb(Zr,Ti)O3-SiO2-B2O3 glass-ceramic thin films derived by sol-gel-method},
journal = {10th Intern. Meeting of Ferroelectricity, Madrid},
year = 2001,
}
@article{CTT100463039,
author = {T.Tamura and Y.Arimoto and H.Ishiwara},
title = {A new circuit simulation model of ferroelectric capacitors},
journal = {2001 Intern. Conf. on Solid State Devies and Materials, Tokyo},
year = 2001,
}
@article{CTT100463038,
author = {S.Ohmi and C.Kobayashi and E.Tokumitsu and H.Ishiwara and H.Iwai},
title = {Low leakage La2O3 gate insulator film with EOT of 0.8-1.2nm},
journal = {2001 Intern. Conf. on Solid State Devies and Materials, Tokyo},
year = 2001,
}
@article{CTT100463037,
author = {H.Morioka and H.Ishiwara},
title = {Orientation control in (Bi,La)4Ti3O12 thin films by preparation method of sol-gel precursor solution},
journal = {13th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs},
year = 2001,
}
@article{CTT100463036,
author = {S-M.Yoon and H.Ishiwara},
title = {Memory operations and data disturb characteristics of 1T2C-type ferroelectric memory array},
journal = {13th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs},
year = 2001,
}
@article{CTT100463035,
author = {T.Tamura and Y.Arimoto and H.Ishiwara},
title = {Modeling of dynamic response of ferroelectric capacitors},
journal = {13th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs},
year = 2001,
}
@article{CTT100463034,
author = {B-E.Park and H.Ishiwara},
title = {Fabrication of MFIS diodes using sol-gel derived SBT films and LaAlO3 buffer layers},
journal = {13th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs},
year = 2001,
}
@article{CTT100463033,
author = {T.Kijima and H.Ishiwara},
title = {Novel ferroelectric materials with low crystallization temperature and excellent surface morphology},
journal = {13th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs},
year = 2001,
}
@article{CTT100462888,
author = {X.Wang and H.Ishiwara},
title = {Improvement of electrical property of sol-gel-derived lead zirconate titanate thin films by multiple rapid thermal annealing},
journal = {Jpn. J. Appl. Phys.},
year = 2001,
}
@article{CTT100462879,
author = {石原宏},
title = {強誘電体メモリの現状},
journal = {クライスターイオンビームプロセステクノロジー予稿集},
year = 2001,
}
@article{CTT100462616,
author = {Y.Fujisaki and H.Ishiwara},
title = {Al2O3/Si3N4 buffer layer for high performance MFIS transistors},
journal = {2001 Material Research Society Fall Meeting},
year = 2001,
}
@article{CTT100462615,
author = {緒方信人 and 石原宏},
title = {MOCVD-Ir薄膜形成過程における酸素分圧の影響},
journal = {第62回応用物理学会学術講演会},
year = 2001,
}
@article{CTT100462567,
author = {N.Ogata and H.Ishiwara},
title = {Optimized MOCVD condition using Ir(EtCp)(cod) for formation of dense and smooth iridium films},
journal = {1st Intern. Meeting on Ferroelectric Random Access Memories, Gotemba},
year = 2001,
}
@article{CTT100462566,
author = {T.Tamura and Y.Arimoto and H.Ishiwara},
title = {Ferroelectric capacitor model for circuit simulation of FeRAM},
journal = {1st Intern. Meeting on Ferroelectric Random Access Memories, Gotemba},
year = 2001,
}
@article{CTT100462563,
author = {S.Ogasawara and H.Ishiwara},
title = {1T2C-type ferroelectric memory using SBT capacitors and local interconnention},
journal = {1st Intern. Meeting on Ferroelectric Random Access Memories, Gotemba},
year = 2001,
}
@article{CTT100462562,
author = {Y.Fujisaki and T.Kijima and K.Aizawa and S.Ogasawara and H.Ishiwara},
title = {High performance buffer layer suitable for metal-ferroelectric-insulator-semicondoctor transistor with low voltage operation},
journal = {1st Intern. Meeting on Ferroelectric Random Access Memories, Gotemba},
year = 2001,
}
@article{CTT100462561,
author = {S-K.Kang and H.Ishiwara},
title = {Electrical properities of Pt/SBT/Pt/LaAlO3/Si MFMIS structure},
journal = {1st Intern. Meeting on Ferroelectric Random Access Memories, Goteomba},
year = 2001,
}
@article{CTT100462560,
author = {T.Sato and T.Kuroiwa and H.Ishiwara},
title = {Low pressure crystallization of Bi-La-Ti-O thin films},
journal = {1st Intern. Meeting on Ferroelectric Random Access Memories, Gotemba},
year = 2001,
}
@article{CTT100462559,
author = {X.Wang and H.Ishiwara},
title = {Ferroelectric SrBi2Ta2O9-Bi4Ti3O12 composite thin films prepared by sol-gel method},
journal = {1st Intern. Meeting on Ferroelectric Random Access Memories, Gotemba},
year = 2001,
}
@article{CTT100462558,
author = {Y.Nishioka and H.Ishiwara},
title = {Improvement of ferroelectric properities of SrBi2Ta2O9 thin films sputtered through a metal mask},
journal = {1st Intern. Meeting on Ferroelectric Random Access Memories, Gotemba},
year = 2001,
}
@article{CTT100462557,
author = {K.Kijima and H.Ishiwara},
title = {A novel solid solution exhibiting excellent ferroelectricity},
journal = {1st Intern. Meeting on Ferroelectric Random Access Memories, Gotemba},
year = 2001,
}
@article{CTT100462556,
author = {H.Ishiwara},
title = {Current status of ferroelectric memories},
journal = {1st Intern. Meeting on Ferroelectric Random Access Memories, Gotemba},
year = 2001,
}
@article{CTT100462544,
author = {E.Tokumitsu and T.Isobe and T.Kijima and H.Ishiwara},
title = {Fabrication and characterization of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structure using ferroelectric (Bi,La)4Ti3O12 films},
journal = {Jpn. J. Appl. Phys},
year = 2001,
}
@article{CTT100462543,
author = {X.Wang and H.Ishiwara},
title = {Sol-gel derived ferroelectric Pb(Zr1-XTiX)O3-SiO2-B2O3 glass-ceramic thin films formed at relatively low annealing temperatures},
journal = {Jpn. J. Appl. Phys},
year = 2001,
}
@article{CTT100462535,
author = {Y.Fujisaki and T.Kijima and H.Ishiwara},
title = {High performance MFIS structure with sol-gel (Bi,La)4Ti3O12 ferroelectrics and Si3N4 buffer layer made by atomic nitrogen},
journal = {13th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs},
year = 2001,
}
@article{CTT100462534,
author = {H.Ishiwara},
title = {Current status of ferroelectric memories},
journal = {Proc. of 2001 Intern. Conf. on Electrical, Electronics, Communication and Information (CECI2001), Jakarta},
year = 2001,
}
@article{CTT100462533,
author = {H.Ishiwara},
title = {Current status of FET-type ferroelectric memories},
journal = {2001 Asia-Pasific Workshop on Fundamemtal and Application of Advanced Semiconductor Devices, Cheju},
year = 2001,
}
@article{CTT100462532,
author = {H.Ishiwara},
title = {Current status of FET-type ferroelectric memories},
journal = {8th Intern. Workshop on Oxide Electronics, Osaka},
year = 2001,
}
@article{CTT100462531,
author = {H.Ishiwara},
title = {Recent progress of ferroelectric memory materials and FET-type FeRAMs},
journal = {IUVSTA 15th Intern. Vaccum Congress, San Francisco},
year = 2001,
}
@article{CTT100462530,
author = {H.Ishiwara},
title = {Current status and prospects of ferroelectric memories},
journal = {IEEE Intern. Electron Devices Meeting},
year = 2001,
}
@article{CTT100462416,
author = {B-K.Moon and H.Ishiwara and E.Tokumitsu and M.Yoshimoto},
title = {Characteristics of ferroelectric Pb(Zr,Ti)O3 films epitaxially grown on CeO2(111)/Si(111) substrates},
journal = {Thin Solid Films},
year = 2001,
}
@article{CTT100462415,
author = {T.Tamura and A.Arimoto and H.Ishiwara},
title = {A parallel element model for simulation switching response of ferroelectric capacitors},
journal = {IEICE Trans. on Electronics},
year = 2001,
}
@article{CTT100462414,
author = {N.Ogata and H.Ishiwara},
title = {A model for high frequency C-V characteristics of ferroelectric capacitors},
journal = {IEICE Trans. on Electronics},
year = 2001,
}
@article{CTT100462413,
author = {S.Ogasawara and S-M.Yoon and H.Ishiwara},
title = {Fabrication and characterzation of 1T2C-type ferroelectric memory cell},
journal = {IEICE Trans. on Electronics},
year = 2001,
}
@article{CTT100462412,
author = {B-E.Park and H.Ishiwara},
title = {Electrical properties of LaAlO3/Si and Sr0.8Bi2.2Ta2O9/LaAlO3/Si structure},
journal = {Appl. Phys. Lett.},
year = 2001,
}
@article{CTT100462402,
author = {B-E.Park and H.Ishiwara},
title = {Fabrication of PZT films on Si substrate by sol-gel method using Y2O3 buffer layers},
journal = {Integrated Ferroelectrics},
year = 2001,
}
@article{CTT100462401,
author = {H.Ishiwara},
title = {Recent progress on FET-type ferroelectric memories},
journal = {Integrated Ferroelectrics},
year = 2001,
}
@article{CTT100455719,
author = {E. Tokumitsu and D. Takahashi and H. Ishiwara},
title = {Characterization of Metal-Ferroelectric- (Metal-)Insulator-Semiconductor(MF(M)IS)Structures Using (Pb,La)(Zr,Ti)O3and Y2O3 Films},
journal = {Jpn. J. Appl. Phys.},
year = 2000,
}
@article{CTT100535805,
author = {Sung-ming Yoon and Eisuke Tokumitsu and Hiroshi Ishiwara},
title = {Ferroelectric Neuron Integrated Circuits using SrBi2Ta2O9-Gate FET's and CMOS Schmitt-Trigger Oscillators},
journal = {IEEE Transactions on Electron Devices},
year = 2000,
}
@article{CTT100535807,
author = {Sung-ming YOON and Eisuke TOKUMITSU and Hiroshi ISHIWARA},
title = {Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/ SrBi2Ta2O9/Pt/Ti/SiO2/Si Structure-Field Effect Transistor as a Synapse Device},
journal = {Jpn. J. Appl. Phys.},
year = 2000,
}
@article{CTT100535806,
author = {Eisuke TOKUMITSU and Gen FUJII and Hiroshi ISHIWARA},
title = {Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor(MFIS)-and Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Ferroelectric SrBi2Ta2O9 Film and SrTa2O6/SiON Buffer Layer},
journal = {Jpn. J. Appl. Phys.},
year = 2000,
}
@article{CTT100507621,
author = {Eisuke Tokumitsu and Koji Aizawa and Kojiro Okamoto and Hiroshi Ishiwara},
title = {Impact of face-to-face annealing in preparation of sol-gel-derived SrBi2Ta2O9 thin films},
journal = {Appl. Phys. Lett.},
year = 2000,
}
@article{CTT100443658,
author = {磯辺武揚 and 木島健 and 徳光永輔 and 石原宏},
title = {ゾルゲル法によるLaド－プBi4Ta3O12膜の配向性制御},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100443664,
author = {E. Tokumitsu and T. Isobe and T. Kijima and H. Ishiwara},
title = {Preparation and characterization of (Bi,La)4Ti3O12 films by the sol-gel technique},
journal = {Mater. Res. Soc. Sympo. (Ferroelectric Thin films IX)},
year = 2000,
}
@article{CTT100443663,
author = {T. Kijima and Y. Fujisaki and T. Isobe and E. Tokumitsu and H. Ishiwara},
title = {New Pt/(Bi,La)4Ti3O12/Si3N4/Si MFIS structure for FET-type ferroelectric memories by the sol-gel method},
journal = {Mater. Res. Soc. Sympo. (Ferroelectric Thin films IX)},
year = 2000,
}
@article{CTT100443662,
author = {飯塚力巳 and 會澤康治 and 石原宏},
title = {Face-to-face annealing法によるゾルゲルSBT薄膜の作製},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100443661,
author = {會澤康治 and 石原宏},
title = {Face-to-face annealing法によるゾルゲルSBT薄膜のTEM観察},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100443660,
author = {佐藤剛彦 and 石原宏},
title = {Ru電極上への強誘電体膜形成},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100443659,
author = {木島健 and 磯辺武揚 and 徳光永輔 and 石原宏},
title = {ゾルゲル法による(Bi,La)4Ti3O12/SiN/Si構造の作製},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100443657,
author = {朴炳垠 and 石原宏},
title = {ゾルゲル法によるLaAlO3/Si構造上へのSr0.8Bi2.2Ta2O9薄膜の形成},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100443656,
author = {藤井俊成 and 舟窪浩 and 石原宏},
title = {ダブルアルコキシド原料を用いた溶液気化MOCVD法によるSrBi2Ta2O9薄膜の作製},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100443655,
author = {天野敦弘 and 岡本浩次郎 and 徳光永輔 and 石原宏},
title = {Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si構造のデバイスパラメーターの検討},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100443654,
author = {康昇国 and 石原宏},
title = {SrBi2Ta2O9/(Pt)/Al2O3/Si構造MF(M)ISの特性評価},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100443653,
author = {田村哲郎 and 小粥光洋 and 有本由弘 and 會澤康治 and 石原宏},
title = {SBTキャパシタの分極反転特性},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100443652,
author = {山本修一郎 and 石原宏},
title = {シュミットトリガ回路を用いた回路要素並列型強誘電体SPICEモデルの構築},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100443651,
author = {小篠団 and 會澤康治 and 石原宏},
title = {SOI基板上へのMFISFET型マトリクス構造の作製と評価},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100443645,
author = {緒方直人 and 石原宏},
title = {強誘電体キャパシタの高周波C-Vモデル},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100443644,
author = {尹聖民 and 小笠原悟 and 石原宏},
title = {保持と読み出し動作の機能を分離した1T2C構造の強誘電体メモリアレイの作製},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100443643,
author = {小笠原悟 and 尹聖民 and 石原宏},
title = {機能分離型1T2C強誘電体ゲートFETの動作特性},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100443642,
author = {小粥光洋 and 田村哲郎 and 有本由弘 and 會澤康治 and 石原宏},
title = {強誘電体ゲートFETの減分極電界の影響},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100443641,
author = {藤崎芳久 and 石原宏},
title = {原子状窒素を用いたSi(100)基板の直接窒化},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100443640,
author = {今田将吾 and 徳光永輔 and 石原宏},
title = {強誘電体YMnO3薄膜を用いた強誘電体ゲートFETの作製},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100443639,
author = {王旭升 and 石原宏},
title = {Sol-gel prepared ferroelectric PZT glassceramic thin films for FeRAM aplications},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100443638,
author = {大島享介 and 大見俊一郎 and 徳光永輔 and 岩井洋 and 石原宏},
title = {高誘電率材料ZrO2膜の特性とSr添加の効果},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100443637,
author = {柏木仁 and 上杉尚史 and 徳光永輔 and 石原宏},
title = {InXGa1-XAsをバッファー層としたBaMgF4膜のGaAs基板上への作製と評価 (III)},
journal = {第47回応用物理学関係連合講演会},
year = 2000,
}
@article{CTT100443636,
author = {小笠原悟 and 加藤匠 and 高原淳 and 徳光永輔 and 石原宏},
title = {機能分離型強誘電体ゲートFETのSPICEシミュレーション},
journal = {第47回応用物理学関係連合講演会},
year = 2000,
}
@article{CTT100443605,
author = {尹聖民 and 川口直一 and 徳光永輔 and 石原宏},
title = {MFMOS構造のFETにおけるメモリ保持特性の評価とデバイス構造の最適化},
journal = {第47回応用物理学関係連合講演会},
year = 2000,
}
@article{CTT100443604,
author = {高橋大輔 and 徳光永輔 and 石原宏},
title = {Pt/PLZT/Pt/Y2O3/Siを用いたMFMIS構造の作製と評価},
journal = {第47回応用物理学関係連合講演会},
year = 2000,
}
@article{CTT100443603,
author = {加藤匠 and 高原淳 and 山本修一郎 and 小笠原悟 and 徳光永輔 and 石原宏},
title = {HSPICEによるトランジスタ型強誘電体メモリの動作解析},
journal = {第47回応用物理学関係連合講演会},
year = 2000,
}
@article{CTT100443602,
author = {神保武人 and 藤井俊成 and 磯辺武揚 and 舟窪浩 and 徳光永輔 and 石原宏},
title = {溶液気化MOCVD法により作製したSrBi2Ta2O9薄膜の評価と膜質の改善},
journal = {第47回応用物理学関係連合講演会},
year = 2000,
}
@article{CTT100443601,
author = {天野敦弘 and 岡本浩次郎 and 徳光永輔 and 石原宏},
title = {SrBi2Ta2O9/Ir系導電膜/SiO2/SrからなるMFMIS構造の作製},
journal = {第47回応用物理学関係連合講演会},
year = 2000,
}
@article{CTT100443600,
author = {今福周作 and 岡本浩次郎 and 徳光永輔 and 石原宏},
title = {ゾルゲル法による(SrXBa1-X)Bi2Ta2O9薄膜の作製},
journal = {第47回応用物理学関係連合講演会},
year = 2000,
}
@article{CTT100443599,
author = {今田将吾 and 倉岡拓也 and 徳光永輔 and 石原宏},
title = {金属Mn及びラジカル酸素を用いた強誘電体YMnO3薄膜のMBE成長},
journal = {第47回応用物理学関係連合講演会},
year = 2000,
}
@article{CTT100443598,
author = {岡本浩次郎 and 天野敦弘 and 會澤康治 and 徳光永輔 and 石原宏},
title = {SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si構造MFMIS-FETの特性評価(II)},
journal = {第47回応用物理学関係連合講演会},
year = 2000,
}
@article{CTT100443597,
author = {康昇国 and 藤崎芳久 and 石原宏},
title = {窒素ラジカル源による窒化膜とSrBi2Ta2O9強誘電体を用いたMFIS構造の作製},
journal = {第47回応用物理学関係連合講演会},
year = 2000,
}
@article{CTT100443596,
author = {藤井俊成 and 神保武人 and 舟窪浩 and 徳光永輔 and 石原宏},
title = {Sr,Ta新原料を用いた溶液気化MOCVD法によるSBT薄膜の作製},
journal = {第47回応用物理学関係連合講演会},
year = 2000,
}
@article{CTT100443589,
author = {飯塚力巳 and 會澤康治 and 徳光永輔 and 石原宏},
title = {Face-to-face annealing法により結晶化したゾルゲルSBT薄膜のBi組成比依存性},
journal = {第47回応用物理学関係連合講演会},
year = 2000,
}
@article{CTT100443588,
author = {會澤康治 and 岡本浩次郎 and 徳光永輔 and 石原宏},
title = {Face-to-face annealing法によるゾルゲルSBT薄膜の形成と評価},
journal = {第47回応用物理学関係連合講演会},
year = 2000,
}
@article{CTT100443375,
author = {Y. Fujisaki and H. Ishiwara},
title = {Dmage-free and hydrogen-free nitridation of silicon substrate by nitrogen radical source},
journal = {Jpn. J. Appl. Phys.},
year = 2000,
}
@article{CTT100443374,
author = {K. Aizawa and H. Ishiwara},
title = {Correlation between ferroelectricity and grain structures of face-to-face annealed strontium bismuth tantalate thin films},
journal = {Jpn. J. Appl. Phys.},
year = 2000,
}
@article{CTT100443357,
author = {K. Oshima and E. Tokumitsu and S. Ohmi and H. Iwai and H. Ishiwara},
title = {Electrical characteristics of high dielectric constant ZrO2 thin films prepared by ultra high vacuum-electron beam evaporation method},
journal = {29th IUVSTA Intern. Workshop on Selective and Functional Film Deponsition Technologies as Applied to ULSI Technology},
year = 2000,
}
@article{CTT100443356,
author = {S-M. Yoon and H. Ishiwara},
title = {A novel FET-type ferroelectric memory with excellent data retention characteristics},
journal = {Technical Digest of Intern. Electron Devices Meeting},
year = 2000,
}
@article{CTT100443208,
author = {HIROSHI ISHIWARA},
title = {Recent progress on FET-type ferroelectric memories},
journal = {12th Intern Sympo. on Integrated Ferroelectrics},
year = 2000,
}
@article{CTT100442631,
author = {石原宏},
title = {トランジスタ型強誘電体メモリの現状と展望},
journal = {FEDジャーナル},
year = 2000,
}
@article{CTT100442630,
author = {HIROSHI ISHIWARA},
title = {Current status and prospects of FET-type ferroelectric memories},
journal = {FED journal},
year = 2000,
}
@article{CTT100440034,
author = {石原宏},
title = {強誘電体メモリの現状と将来},
journal = {第20回武井セミナー講演集},
year = 2000,
}
@article{CTT100440033,
author = {石原宏},
title = {新しい薄膜・プロセス技術},
journal = {ブレークスルー},
year = 2000,
}
@article{CTT100440032,
author = {藤崎芳久 and 石原宏},
title = {原子状窒素を用いたSi基板のダメージフリー低温窒化技術},
journal = {電子情報通信学会、信学技報},
year = 2000,
}
@article{CTT100440031,
author = {徳光永輔 and 岡本浩次郎 and 石原宏},
title = {SrBi2Ta2O9とSrTa2O6/SiONバッファ層を用いた強誘電体ゲートFETデバイスパラメータの最適化},
journal = {電子情報通信学会、信学技報},
year = 2000,
}
@article{CTT100440030,
author = {今田将吾 and 徳光永輔 and 石原宏},
title = {MBE法を用いた強誘電体YMnO3薄膜のSi(111)基板上への成長と強誘電体ゲートトランジスタへの応用},
journal = {電子情報通信学会、信学技報},
year = 2000,
}
@article{CTT100439551,
author = {石原宏},
title = {高誘電率／強誘電体ゲート絶縁膜の可能性},
journal = {応用物理},
year = 2000,
}
@article{CTT100439550,
author = {石原宏},
title = {強誘電体メモリの現状},
journal = {セラミックデータブック2000（工業製品技術協会）},
year = 2000,
}
@article{CTT100439549,
author = {石原宏},
title = {トランジスタ型強誘電体メモリ},
journal = {電子材料},
year = 2000,
}
@article{CTT100439548,
author = {T. Kijima and Y. Fujisaki and H. Ishiwara},
title = {Fabrication and characterization of Pt/(Bi,La)4Ti3O12/ Si3N4/Si MFIS structure for FET-type ferroelectric memory applications},
journal = {Ext. Abst. of Intern. Conf. on Solid State Device and Materials},
year = 2000,
}
@article{CTT100439235,
author = {K. Aizawa and K. Iizuka and E. Tokumitsu and H. Ishiwara},
title = {Ferroelectric properties of face-to-face annealed Sr0.8BiXTa2O9 thin films},
journal = {12th Intern. Sympo. on Applications of Ferroelectrics},
year = 2000,
}
@article{CTT100439234,
author = {S-M.Yoon and E.Tokumitsu and H.Ishiwara},
title = {Adaptive-learning neuron circuit using ferroelectric-gate FETs},
journal = {12th Intern. Sympo. on. Integrated Ferroelectrics},
year = 2000,
}
@article{CTT100439233,
author = {K. Aizawa and E. Tokumitsu and K. Okamoto and H. Ishiwara},
title = {Ferroelectric properties of sol-gel derived and face-to-face annealed SrBi2Ta2O9 thin films},
journal = {12th Intern. Sympo. on. Integrated Ferroelectrics},
year = 2000,
}
@article{CTT100439232,
author = {B-E. Park and E. Tokumitsu and H. Ishiwara},
title = {Fabrication of PZT films on Si substrates by sol-gel method using Y2O3 buffer layers},
journal = {12th Intern. Sympo. on. Integrated Ferroelectrics},
year = 2000,
}
@article{CTT100439231,
author = {HIROSHI ISHIWARA},
title = {Current status of FET-type ferroelectric memories},
journal = {12th Intern. Sympo. on Applications of Ferroelectrics},
year = 2000,
}
@article{CTT100439207,
author = {E. Tokumitsu and D. Takahashi and H. Ishiwara},
title = {Characterization of metal-ferroelectric-(matal-)insulator- semiconductor(MF(M)IS) structures using (Pb,La)(Zr,Ti)O3 andY2O3 films},
journal = {Jpn. J. Appl. Phys.},
year = 2000,
}
@article{CTT100439206,
author = {HIROSHI ISHIWARA},
title = {Current status of fabrication and integration of ferroelectric-gate FET's},
journal = {Mater. Res. Soc. Sympo. Proc. (Ferroelectric Thin Film VIII）},
year = 2000,
}
@article{CTT100439205,
author = {S-M. Yoon and E. Tokumitsu and H. Ishiwara},
title = {Ferroelectric neuron integrated circuits using SrBi2Ta2O9-gate FET's and CMOS Schmitt-trigger oscillators},
journal = {IEEE Trans. on Electron Devices},
year = 2000,
}
@article{CTT100439204,
author = {HIROSHI ISHIWARA},
title = {Current status of FET-type ferroelectric memories},
journal = {Proc. of 22nd Intern. Conf. on Microelectronics, Nis},
year = 2000,
}
@article{CTT100439203,
author = {E. Tokumitsu and G. Fujii and H. Ishiwara},
title = {Electrical properties of metal-ferroelectric-insulator- semiconductor(MFIS)- and metal-ferroelectric-metal-insulator-semiconductor(MFMIS)-FETs using ferroelectric SrBi2Ta2O9film and SrTa2O6/SiON buffer layer},
journal = {Jpn. J. Appl. Phys.},
year = 2000,
}
@article{CTT100439202,
author = {S-M. Yoon and E. Tokumitsu and H. Ishiwara},
title = {Improvement of memory retention characteristics in ferroelectric neuron circuits using Pt/SrBi2Ta2O9/Pt/Ti/SiO2/Si structure-field effect transistor as a synapse device},
journal = {Jpn. J. Appl. Phys.},
year = 2000,
}
@article{CTT100439062,
author = {S. Yamamoto and T. Kato and H. Ishiwara},
title = {A novel SPICE model of ferroelectric capacitors using Schmitt trigger circuit},
journal = {Ext. Abst. of Intern. Conf. on Solid State Devices and Materials},
year = 2000,
}
@article{CTT100439061,
author = {E. Tokumitsu and K. Okamoto and H. Ishiwara},
title = {Nonvolatile metal-ferroelectric-metal-insulater-semiconductor(MFMIS)-FETs using Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures operating at 3.5V},
journal = {Ext. Abst. of Intern. Conf. on Solid State Devices and Materials},
year = 2000,
}
@article{CTT100439060,
author = {T. Kijima and Y. Fujisaki and H. Ishiwara},
title = {New MFIS structure of MOCVD-Bi3.3La0.7Ti3O12 with silicon nitride buffer layer},
journal = {12th Intern. Sympo. on Applications of Ferroelectrics},
year = 2000,
}
@article{CTT100439059,
author = {Y. Fujisaki and S-K. Kang and H. Ishiwara},
title = {High performance MFIS structure with silicon nitride buffer layer made by radical nitrogen source},
journal = {12th Intern. Sympo. on Applications of Ferroelectrics},
year = 2000,
}
@article{CTT100439058,
author = {K. Aizawa and E. Tokumitsu and K. Okamoto and H. Ishiwara},
title = {Impact of face-to-face annealing in preparation of sol-gel-derived SrBi2Ta2O9 thin films},
journal = {Appl.Phys.Lett.},
year = 2000,
}
@article{CTT100535810,
author = {Sung-ming Yoon and Eisuke Tokumitsu and Hiroshi Ishiwara},
title = {Adaptive-Learning Neuron Integrated Circuits Using Metal-Ferroelectric (SrBi2Ta2O9)-Semiconductor (MFS) FETs},
journal = {IEEE Electron Device Letters},
year = 1999,
}
@article{CTT100536340,
author = {E.Tokumitsu and Gen Fujii and Hiroshi Ishiwara},
title = {Nonvolatile ferroelectric-gate FETs using SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures},
journal = {Appl. Phys. Lett.},
year = 1999,
}
@article{CTT100425422,
author = {Sung-ming Yoon and Eisuke Tokumitsu and Hiroshi Ishiwara},
title = {An electrically modifiable synapse arrary composed of metal-ferroelectric-semiconductor (MFS) FETs using SrBi2Ta2O9 thin films},
journal = {IEEE Electron Device Lett.},
year = 1999,
}
@article{CTT100428316,
author = {藤井巌 and 徳光永輔 and 石原宏},
title = {Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Siの構造の作製と保持特性の評価},
journal = {第46回応用物理学関係連合講演会},
year = 1999,
}
@article{CTT100428315,
author = {佐野春行 and 高橋祐治 and 神保武人 and 舟窪浩 and 徳光永輔 and 石原宏},
title = {溶液気化MOCVD法を用いたSrBi2Ta2O9薄膜形成におけるプラズマ印加効果（II）},
journal = {第46回応用物理学関係連合講演会},
year = 1999,
}
@article{CTT100428314,
author = {モハンマッド・ムスタファ・サリナント and 今田将吾 and 正力重仁 and 朴炳垠 and 徳光永輔 and 石原宏},
title = {Y2O3/Si上に成長した強誘電体薄膜の断面TEM観察},
journal = {第46回応用物理学関係連合講演会},
year = 1999,
}
@article{CTT100428313,
author = {今田将吾 and 正力重仁 and 徳光永輔 and 石原宏},
title = {MBE法による強誘電体YMnO3薄膜の作製（IV）},
journal = {第46回応用物理学関係連合講演会},
year = 1999,
}
@article{CTT100427659,
author = {M. M. Sarinanto and S. Imada and S. Shoriki and B-E. Park and E. Tokumitsu and H. Ishiwara},
title = {TEM observation of ferroelectric films grown on sillicon using Y2O3 buffer layer（共著）},
journal = {Intern. Sympo. on Integrated Ferroelectric},
year = 1999,
}
@article{CTT100427658,
author = {T. Jimbo and H. Sano and Y. Takahashi and E. Tokumitsu and H. Funakubo and H. Ishiwara},
title = {Effers of growth conditions and RF plasma on crystalline and electrical properties of SrBi2Ta2O9 thin films grown by liquid delivery MOCVD using a double alcholate（共著）},
journal = {Intern. Sympo. on Integrated Ferroelectric},
year = 1999,
}
@article{CTT100427657,
author = {K. Aizawa and H. Ishiwara},
title = {Fabrication and characterization of MFSFET arrays using Al/BaMgF4/Si(111) structures（共著）},
journal = {Intern. Sympo. on Integrated Ferroelectric},
year = 1999,
}
@article{CTT100427588,
author = {H.Ishiwara},
title = {Current status of fabrication and integration of ferroelectric-gate FETs},
journal = {Mater. Res. Soc. Sympo.},
year = 1999,
}
@article{CTT100427541,
author = {S-M. Yoon and E. Tokumitsu and H. Ishiwara},
title = {Adaptive-learning neuron integrated circuits using metal-ferroelectric(SrBi2Ta2O9)-semiconductor (MFS) FETs（共著）},
journal = {IEEE Electron Device Lett.},
year = 1999,
}
@article{CTT100427540,
author = {S-M. Yoon and E. Tokumitsu and H. Ishiwara},
title = {An electrically modifiable synapse array composed of metal-ferroelectric-semiconductor (MFS) FETs using SrBi2Ta2O9 thin films（共著）},
journal = {IEEE Electron Device Lett.},
year = 1999,
}
@article{CTT100427539,
author = {S-M. Yoon and E. Tokumitsu and H. Ishiwara},
title = {Realization of adaptive learning function in a neuron circuit using metal/ferroelectric(SrBi2Ta2O9)/semiconductor field effect transistor (MFSFET)（共著）},
journal = {Jpn. J. Appl. Phys.},
year = 1999,
}
@article{CTT100427538,
author = {T. Jimbo and H. Sano and Y. Takahashi and H. Hunakubo and E. Tokumitsu and H. Ishiwara},
title = {Preparation of SrBi2Ta2O9 thin films by liquid-delivery metalorganic chemical vapor deposition using a double alcoholate source（共著）},
journal = {Jpn. J. Appl. Phys.},
year = 1999,
}
@article{CTT100427534,
author = {E. Tokumitsu and G. Fujii and H. Ishiwara},
title = {Nonvolatile ferroelectric-gate FETs using SrBi2Ta2O6/Pt/SrTa2O6/SiON/Si structures（共著）},
journal = {Appl. Phys. Lett.},
year = 1999,
}
@article{CTT100427533,
author = {S. Imada and S. Shouriki and E. Tokumitsu and H. Ishiwara},
title = {Molecular beam epitaxial growth of YMno3 films on Si(111) substrates for ferroelectric-gate FET applications（共著）},
journal = {Proc. of Intern. Sympo. on Future of Intellectual Integrated Electronics},
year = 1999,
}
@article{CTT100427532,
author = {E. Tokumitsu and Y. Takahashi and H. Ishiwara},
title = {Preparation and characterization of Bi2VO5.5 films by MOD method（共著）},
journal = {Mater. Res. Soc. Sympo. Proc.},
year = 1999,
}
@article{CTT100427531,
author = {S. Imada and S. Shouriki and E. Tokumitsu and H. Ishiwara},
title = {MBE growth of ferroelectric YMnO3 thin films on Si(111) using Y2O3 buffer layers（共著）},
journal = {Mater. Res. Soc. Sympo. Proc.},
year = 1999,
}
@article{CTT100428320,
author = {正力重仁 and 今田将吾 and 徳光永輔 and 石原宏},
title = {Y2O3バッファ層を用いたMF(M)IS構造の作製},
journal = {第46回応用物理学関係連合講演会},
year = 1999,
}
@article{CTT100426978,
author = {H.Ishiwara},
title = {Current status and prospects of FET-type ferroelectric memories},
journal = {57th Device Reseach Conf. Digest},
year = 1999,
}
@article{CTT100426977,
author = {H.Ishiwara},
title = {Adaptive-learning neurochips using ferroelectric thin films},
journal = {Mater. Res. Soc. Sympo.},
year = 1999,
}
@article{CTT100426979,
author = {H.Ishiwara and E.Tokumitsu and G.Fujii},
title = {Optimization of buffer layers and device structures in ferroelectric-gate FETs},
journal = {Ext. Abstracts of 9th US-Japan Seminar on Dielectric and Piezoelectric Ceramics},
year = 1999,
}
@article{CTT100428319,
author = {朴炳垠 and 高橋大輔 and 徳光永輔 and 石原宏},
title = {ゾルゲル法によるPZT/Y2O3/Si構造の作製（2）},
journal = {第46回応用物理学関係連合講演会},
year = 1999,
}
@article{CTT100428318,
author = {尹聖民 and 徳光永輔 and 石原宏},
title = {SrBi2Ta2O9/Si構造のMFSFETを用いたニューロン集積回路の適応学習機能},
journal = {第46回応用物理学関係連合講演会},
year = 1999,
}
@article{CTT100428317,
author = {高橋祐治 and 佐野春行 and 神保武人 and 舟窪浩 and 徳光永輔 and 石原宏},
title = {溶液気化MOCVD法によるSi基板上へのBi2SiO5薄膜の作製（2）},
journal = {第46回応用物理学関係連合講演会},
year = 1999,
}
@article{CTT100428949,
author = {柏木仁 and 上杉尚史 and 徳光永輔 and 石原宏},
title = {InXGa1-XAsをバッファー層としたBaMgF4膜のGaAs基板上への作製と評価（II）},
journal = {第60回応用物理学会学術講演会},
year = 1999,
}
@article{CTT100428948,
author = {今田将吾 and 徳光永輔 and 石原宏},
title = {MBE法による強誘電体YMnO3薄膜の作製(V)},
journal = {第60回応用物理学会学術講演会},
year = 1999,
}
@article{CTT100428947,
author = {加藤匠 and 山本修一郎 and 徳光永輔 and 石原宏},
title = {強誘電体の過渡応答SPICEモデル（II）},
journal = {第60回応用物理学会学術講演会},
year = 1999,
}
@article{CTT100428757,
author = {高原淳 and 徳光永輔 and 石原宏},
title = {機能分離型強誘電体ゲートFETの作製},
journal = {第60回応用物理学会学術講演会},
year = 1999,
}
@article{CTT100428756,
author = {尹聖民 and 徳光永輔 and 石原宏},
title = {SrBi2Ta2O9薄膜を用いた強誘電体ニューロン回路の適応学習機能},
journal = {第60回応用物理学会学術講演会},
year = 1999,
}
@article{CTT100428672,
author = {石原宏},
title = {強誘電体ゲートFETの現状と展望},
journal = {Challenge of Intelligence for Future BREAK THROUGH},
year = 1999,
}
@article{CTT100428671,
author = {石原宏},
title = {第11回集積強誘電体会議報告},
journal = {電子工業月報},
year = 1999,
}
@article{CTT100428670,
author = {石原宏},
title = {Si基板上への強誘電体薄膜の形成},
journal = {電気化学会 第66回大会},
year = 1999,
}
@article{CTT100428669,
author = {石原宏 and 徳光永輔 and 尹聖民},
title = {適応学習型強誘電体メモリ},
journal = {第46回応用物理学関係連合講演会},
year = 1999,
}
@article{CTT100428668,
author = {E. Tokumitsu and S-M. Yoon and H. Ishiwara},
title = {Fabrication and characterization of neuron circuits using ferroelectric-gate transistors},
journal = {応用物理シリコンテクノロジー研究会},
year = 1999,
}
@article{CTT100428667,
author = {S-M. Yoon and A. Amano and E. Tokumitsu and H. Ishiwara},
title = {Nonvolatile ferroelectric memory FET using Pt/SrBi2Ta2O9/Pt/SiO2/Si structure},
journal = {Abstructs of 1999 Joint Intern. Meeting of Electrochem. Soc. Sympo.},
year = 1999,
}
@article{CTT100428666,
author = {E. Tokumitsu and G. Fujii and H. Ishiwara},
title = {Electrical properties of MFIS- and MFMIS-FETs using ferroelectric SrBi2Ta2O9 film and SrTa2O6/SiON buffer layer},
journal = {Ext. Abstructs of Intern. Conf. on Solid State Devices and Materials},
year = 1999,
}
@article{CTT100428665,
author = {S-M. Yoon and E. Tokumitsu and H. Ishiwara},
title = {Neuron integrated circuits with adaptive learning function using ferroelectric(SrBi2Ta2O9)-gate FETs and CMOS Schmitt-trigger oscillators},
journal = {Ext. Abstracts of Intern. Conf. on Solid State Devices and Materials},
year = 1999,
}
@article{CTT100428664,
author = {E. Tokumitsu and A. Amano and G. Fujii and H. Ishiwara},
title = {Electrical properties of Pt/SrBi2Ta2O9/Pt/SiO2/Si MFMIS structures and FETs with various area rations of MFM capacitor to Pt floating gate},
journal = {Technical report of IEICE},
year = 1999,
}
@article{CTT100428663,
author = {E. Tokumitsu and G. Fujii and H. Ishiwara},
title = {Characterization of MFIS and MFMIS structures using SrBi2Ta2O9 film with SrTa2O6/SiON stacked buffer layer},
journal = {41st Electronic. Mater. Conf.},
year = 1999,
}
@article{CTT100428662,
author = {E. Tokumitsu and A. Amano and G. Fujii and H. Ishiwara},
title = {Characterization of Pt/SrBi2Ta2O9/Pt/SiO2/Si MFMIS structures for ferroelectric-gate FET applications},
journal = {Abst. of '99 Asian Conf. on Electrochemistry},
year = 1999,
}
@article{CTT100428332,
author = {會澤康治 and 岡本浩次郎 and 天野敦弘 and 徳光永輔 and 石原宏},
title = {強誘電体ゲートFETのパルスdisturb特性（II）},
journal = {第60回応用物理学会学術講演会},
year = 1999,
}
@article{CTT100560063,
author = {H. Ishiwara and E. Tokumitsu and S-M. Yoon},
title = {Fabrication of adaptive-learning neurochips using ferroelectric thin films},
journal = {Proc. of Intern. Sympo. on Future of Intellectual IntegratedElectronics},
year = 1999,
}
@article{CTT100560064,
author = {神保武人 and 佐野春行 and 高橋祐治 and 舟窪浩 and 徳光永輔 and 石原宏},
title = {ダブルアルコラート原料を用いた溶液気化MOCVD法によるSrBi2Ta2O9薄膜の作製(3）},
journal = {第46回応用物理学関係連合講演会},
year = 1999,
}
@article{CTT100428331,
author = {岡本浩次郎 and 天野敦弘 and 徳光永輔 and 石原宏},
title = {SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si構造MFMIS-FETの特性評価},
journal = {第60回応用物理学会学術講演会},
year = 1999,
}
@article{CTT100428330,
author = {天野敦弘 and 岡本浩次郎 and 徳光永輔 and 石原宏},
title = {強誘電体SrBi2Ta2O9およびSiO2緩衝層を用いたMFMIS構造の作製},
journal = {第60回応用物理学会学術講演会},
year = 1999,
}
@article{CTT100428329,
author = {神保武人 and 舟窪浩 and 徳光永輔 and 石原宏},
title = {溶液気化MOCVD法により作製したSrBi2Ta2O9薄膜の特性改善},
journal = {第60回応用物理学会学術講演会},
year = 1999,
}
@article{CTT100428328,
author = {朴炳垠 and 高橋大輔 and 徳光永輔 and 石原宏},
title = {オゾン雰囲気中でアニールしたPZT/Y2O3/Si構造の評価},
journal = {第60回応用物理学会学術講演会},
year = 1999,
}
@article{CTT100428327,
author = {高橋大輔 and 朴炳垠 and 徳光永輔 and 石原宏},
title = {Y2O3バッファー層を用いたPLZT薄膜のSi基板上への形成},
journal = {第60回応用物理学会学術講演会},
year = 1999,
}
@article{CTT100428326,
author = {西山淳 and 會澤康治 and 徳光永輔 and 石原宏},
title = {BaMgF4/Pt/SiO2/Si構造MFMIS-FETの特性評価（2）},
journal = {第46回応用物理学関係連合講演会},
year = 1999,
}
@article{CTT100428325,
author = {柏木仁 and 小此木敦史 and 徳光永輔 and 石原宏},
title = {InGaAsをバッファー層としたBaMgF4膜のGaAs基板上への作製と評価},
journal = {第46回応用物理学関係連合講演会},
year = 1999,
}
@article{CTT100428324,
author = {會澤康治 and 西山淳 and 徳光永輔 and 石原宏},
title = {強誘電体ゲートFETのパルスdisturb特性},
journal = {第46回応用物理学関係連合講演会},
year = 1999,
}
@article{CTT100428323,
author = {加藤匠 and 山田玲緒奈 and 徳光永輔 and 石原宏},
title = {強誘電体の過渡応答SPICEモデル},
journal = {第46回応用物理学関係連合講演会},
year = 1999,
}
@article{CTT100428322,
author = {高橋大輔 and 朴炳垠 and 徳光永輔 and 石原宏},
title = {PZT/Y2O3/Si構造MFSFETの作製と評価},
journal = {第46回応用物理学関係連合講演会},
year = 1999,
}
@article{CTT100428321,
author = {岡本浩次郎 and 藤井巌 and 徳光永輔 and 石原宏},
title = {Ti酸化物を緩衝層に用いたMFIS構造の作製},
journal = {第46回応用物理学関係連合講演会},
year = 1999,
}
@article{CTT100437958,
author = {Takehito Jimbo and Haruyuki Sano and Yuji Takahashi and Hiroshi Funakubo and Eisuke Tokumitsu and Hiroshi Ishiwara},
title = {Effects of Growth Conditions and RF Plasma on Crystalline and Electrical Properties of SrBi2Ta2O9 Thin Films Grown by Liquid Deliverly MOCVD Using a Double Alcholate},
journal = {Integ. Ferro.},
year = 1999,
}
@article{CTT100672565,
author = {SHOUGO IMADA and Shigeto Shouriki and Eisuke Tokumitsu and Hiroshi Ishiwara},
title = {MBE GROWTH OF FERROELECTRIC YMnO3 THIN FILMS ON Si(111) USING Y2O3 BUFFER LAYERS},
journal = {Mat. Res. Soc. Symp. Proc.},
year = 1999,
}
@article{CTT100535809,
author = {E.TOKUMITSU and Y. TAKAHASHI and H.ISHIWARA},
title = {PREPARATION AND CHARACTERIZATION OF Bi2VO5.5 FILMS BY MOD METHOD},
journal = {Mater. Res. Soc. Sympo. Proc.},
year = 1999,
}
@article{CTT100535747,
author = {Tatsuya KAMEI and Eisuke TOKUMITSU and Hiroshi ISHIWARA},
title = {Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization},
journal = {IEICE Trans. Electron},
year = 1998,
}
@article{CTT100417465,
author = {Byung-Eun PARK and Shogo IMADA and Eisuke TOKUMITSU and Hiroshi ISHIWARA},
title = {Annealing Effect of the CeO2 Buffer Layers for PZT/CeO2 /Si(111) Structures},
journal = {Journal of the Korean Physical Society},
year = 1998,
}
@article{CTT100535748,
author = {Koji AIZAWA and Eisuke TOKUMITSU and Shigenori OHTAKE and Hiroshi ISHIWARA},
title = {C-V Characteristics of Al/BaMgF4/Si(111) Diodes Fabricated by Dry Etching Process},
journal = {Journal of the Korean Physical Society},
year = 1998,
}
@article{CTT100486068,
author = {HIROSHI ISHIWARA},
title = {Electrical Characteristics of Neuron Oscillation Circuits Composed of MOSFETs and Complementary Unijunction Transistors},
journal = {Japanese Journal of Applied Physics},
year = 1998,
}
@article{CTT100417461,
author = {Eisuke Tokumitsu and Ryo-ichi Nakamura and Hiroshi Ishiwara},
title = {Nonvolatile Memory Operations of Metal-Ferroelectric-Insulator-Semiconductor(MFIS) Fet's Using PLZT/STO/Si(100) Structures},
journal = {IEEE Electron Device Letters},
year = 1997,
}
@article{CTT100427525,
author = {石原宏},
title = {強誘電体ゲートFETの作製とニューロン回路への応用},
journal = {応用物理},
year = 1997,
}
@article{CTT100486067,
author = {HIROSHI ISHIWARA},
title = {Current Status and Prospects of MFSFETs and Related Devices},
journal = {Integrated Ferroelectrics},
year = 1997,
}
@article{CTT100486064,
author = {HIROSHI ISHIWARA},
title = {Nonvolatile Memory Operations of Metal-Ferroelectric-Insulator-Semiconductor(MFIS) FET's Using PLZT/STO/Si(100) Structures},
journal = {IEEE Electron Device Letters},
year = 1997,
}
@article{CTT100486066,
author = {HIROSHI ISHIWARA},
title = {Ferroelectric Neuron Circuits with Adaptive-Learning Function},
journal = {Computers Elect. Engng},
year = 1997,
}
@article{CTT100486065,
author = {H. Ishiwara and T. Shimamura and E. Tokumitsu},
title = {Proposal of a Single-Transistor-Cell-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on the Interference Problem in the Write Operation（共著）},
journal = {Japanese Journal of Applied Physics},
year = 1997,
}
@article{CTT100486063,
author = {HIROSHI ISHIWARA},
title = {Device Characterization of High-Electron-Mobility Transistors with Ferroelectric-Gate Structure},
journal = {Proc. 1996 IEEE GaAs IC Sympo.},
year = 1996,
}
@article{CTT100486062,
author = {HIROSHI ISHIWARA},
title = {Ferroelectric Properties of BaMgF┣D24┫D2 Films Grown on Si(100), (111), and Pt(111)/SiO┣D22┫D2/Si(100) Structures},
journal = {Japanese Journal of Applied Physics},
year = 1996,
}
@article{CTT100486061,
author = {HIROSHI ISHIWARA},
title = {Electrical Properties of Ferroelectric Gate HEMT Structures},
journal = {Japanese Journal of Applied Physics},
year = 1996,
}
@article{CTT100486060,
author = {HIROSHI ISHIWARA},
title = {Enhanced Growth Mechanism in Lateral Solid-Phase Epitaxy of Si Films Simultaneously Doped With P and Ge Atoms},
journal = {Japanese Journal of Applied Physics},
year = 1996,
}
@article{CTT100417453,
author = {Eisuke TOKUMITSU and Ryo-ichi NAKAMURA and Kensuke ITANI and Hiroshi ISHIWARA},
title = {Film Quality Dependence of Adaptive-Learning Processes in Neurodevices Using Ferroelectric PbZrxTi1-xO3(PZT) Films},
journal = {Japanese Journal of Applied Physics},
year = 1995,
}
@article{CTT100486057,
author = {HIROSHI ISHIWARA},
title = {Stress-Induced Anomalous Growth in Lateral Solid-Phase Epitaxy of Ge-incorporated Si Films(共著)},
journal = {Jpn. J. Appl. Phys.},
year = 1995,
}
@article{CTT100486058,
author = {HIROSHI ISHIWARA},
title = {Crystalling Quality of Strain-Free GaAs-on-Si Structures Formed by Annealing Under Ultrahigh Pressure},
journal = {Applied Physics Letters},
year = 1995,
}
@article{CTT100486059,
author = {HIROSHI ISHIWARA},
title = {Formation and Electrical Properties of Heteroepitaxial SrTiO3/SrVO3-x/Si(100) Structures},
journal = {Applied Physics Letters},
year = 1995,
}
@article{CTT100417451,
author = {SHUN-ICHIRO OHMI and EISUKE TOKUMITSU and HIROSHI ISHIWARA},
title = {Characterization of ferroelectric BaMgF4 films grown on AlGaAs/GaAs (100) high-electron-mobility transistor structures},
journal = {Journal of Crystal Growth},
year = 1995,
}
@article{CTT100486055,
author = {石原宏},
title = {超高圧下アニールによるヘテロ構造の熱不整歪の抑制(共著)},
journal = {日本結晶成長学会誌},
year = 1994,
}
@article{CTT100486054,
author = {石原宏},
title = {強誘電体薄膜のニューロデバイスへの応用},
journal = {応用物理},
year = 1994,
}
@article{CTT100486056,
author = {HIROSHI ISHIWARA},
title = {Growth of Crystalline SrTiO┣D23┫D2 Films on Si Substrates Using Thin Fluoride Buffer Layers and Their Electrical Properties(共著)},
journal = {Jpn. J. Appl. Phys.},
year = 1994,
}
@article{CTT100486051,
author = {HIROSHI ISHIWARA},
title = {Growth and device applications of epitaxial insulators on semiconductors},
journal = {Mat. Res. Soc. Sympo. Proc.},
year = 1993,
}
@article{CTT100486052,
author = {HIROSHI ISHIWARA},
title = {Epitaxial growth of BamaF┣D24┫D2films on Si(100) and (111) substrates : An approach to ferroelectric/semiconductor heterostructures(共著)},
journal = {Appl. Phys. Lett.},
year = 1993,
}
@article{CTT100486050,
author = {HIROSHI ISHIWARA},
title = {Proposal of Adaptive-Learning Neuron circuits with Ferroelectric Analog-Memory Weights},
journal = {Jpn. J. Appl. Phys.},
year = 1993,
}
@article{CTT100486049,
author = {HIROSHI ISHIWARA},
title = {Lateral solid phase epitaxy of amorphous si films under ultrahigh pressure(共著)},
journal = {Jpn. J. Appl. Phys.},
year = 1993,
}
@article{CTT100486053,
author = {HIROSHI ISHIWARA},
title = {Formation of BaMgF┣D24┫D2 films on pt/Mgo, Si and GaAs Substrates(共著)},
journal = {Mat. Res. Soc. Sympo. Proc.},
year = 1993,
}
@article{CTT100486048,
author = {HIROSHI ISHIWARA},
title = {Epitaxial growth of strain-free Gefilms on Si substrates by solid phase epitaxy at ultrahigh pressure(共著)},
journal = {Appl. Phys. Lett.},
year = 1992,
}
@article{CTT100474873,
author = {HIROSHI ISHIWARA},
title = {Selective Surface Doping Method of a P Atoms in Lateral Solid Phase Epitaxy and Its Applications to Device Fabricatoin(共著)},
journal = {Jpn. J. Appl. Phys.},
year = 1992,
}
@article{CTT100486040,
author = {HIROSHI ISHIWARA},
title = {Heteroepitaxial growth of conductive and insulating films on semiconductor substrates.(共著)},
journal = {応用物理},
year = 1992,
}
@article{CTT100486041,
author = {HIROSHI ISHIWARA},
title = {Study of subboundary generation in silicon-on-insulator films recrystallized by a pseudoline electron beam(共著)},
journal = {J. Appl. Phys.},
year = 1990,
}
@article{CTT100486042,
author = {HIROSHI ISHIWARA},
title = {A novel heteroepitaxy method of Ge films on CaF┣D22┫D2 by electron beam exposure(共著)},
journal = {J. Appl. Phys.},
year = 1988,
}
@article{CTT100486043,
author = {HIROSHI ISHIWARA},
title = {Characterization of silicon-on-insulator films recrystallized by an obliquely scanned pseudoline electron beam(共著)},
journal = {J. Appl. Phys.},
year = 1987,
}
@article{CTT100486044,
author = {HIROSHI ISHIWARA},
title = {On the Mechanisms of Lateral Solid Phase Epitaxial Growth of Amorphous Si Films Evaporated on SiO┣D22┫D2 Patterns(共著)},
journal = {Jpn. J. Appl. Phys.},
year = 1985,
}
@article{CTT100486045,
author = {HIROSHI ISHIWARA},
title = {Heteroepitaxial Growth of Group-IIa Fluorie Films on Si Substrates(共著)},
journal = {Jpn. J. Appl. Phys.},
year = 1983,
}
@article{CTT100486046,
author = {HIROSHI ISHIWARA},
title = {Backscattering measurements of implanted ion distributions in double-layer structures(共著)},
journal = {J. Appl. Phys.},
year = 1980,
}
@article{CTT100486047,
author = {HIROSHI ISHIWARA},
title = {Separate estimate of crystallite orientations and scattering centers in polycrystals by backscattering technique(共著)},
journal = {J. Appl. Phys.},
year = 1976,
}
@inproceedings{CTT100390745,
author = {H. Ishiwara},
title = {Applications of bismuth-layered perovskite thin films to FET-type ferroelectric memories},
booktitle = {17th Intern. Sympo. on Integrated Ferroelectrics},
year = 2005,
}
@inproceedings{CTT100390746,
author = {S. K. Singh and H. Ishiwara},
title = {Defect engineering for control of polarization fatigue in Bi4-XLaXTi3O12 film capacitors},
booktitle = {17th Intern. Sympo. on Integrated Ferroelectrics},
year = 2005,
}
@inproceedings{CTT100390747,
author = {H. Hoko and C. Aoki and Y. Tabuchi and T. Tamura and K. Maruyama and Y. Arimoto and H. Ishiwara},
title = {Electrical properties of Pt/BLT/HfSiON/Si structure for 1T-type ferroelectric memory},
booktitle = {17th Intern. Sympo. on Integrated Ferroelectrics},
year = 2005,
}
@inproceedings{CTT100390748,
author = {Y. Tabuchi and K. Aizawa and T. Tamura and K. Takahashi and H. Hoko and K. Kato and Y. Arimoto and H. Ishiwara},
title = {Characterization of (Bi,Nd)4Ti3O12/HfO2/p-type Si structures for MFIS-FeRAM application},
booktitle = {17th Intern. Sympo. on Integrated Ferroelectrics},
year = 2005,
}
@inproceedings{CTT100390749,
author = {S. Ohara and K. Aizawa and H. Ishiwara},
title = {Fabrication and characterization of metal-ferroelectric- insulator-semiconductor devices with Pt/Pb5Ge3O11/HfO2/Si structures},
booktitle = {17th Intern. Sympo. on Integrated Ferroelectrics},
year = 2005,
}
@inproceedings{CTT100390750,
author = {S. K. Singh and H. Funakubo and H. Uchida and H. Ishiwara},
title = {Structural and electrical properties of BiFeO3 thin films},
booktitle = {17th Intern. Sympo. on Integrated Ferroelectrics},
year = 2005,
}
@inproceedings{CTT100393650,
author = {S.K.Singh and H.Ishiwara},
title = {Bismuth ferrite thin films for advanced FeRAM devices},
booktitle = {Intern. Conf. on Solid State Devices and Materials},
year = 2005,
}
@inproceedings{CTT100393651,
author = {Y.Tabuchi and S.Hasegawa and T.Tamura and H.Hoko and K.Kato and Y.Arimoto and H.Ishiwara},
title = {Multi-bit programming for 1T-FeRAM by local polarization method},
booktitle = {Intern. Conf. on Solid State Devices and Materials},
year = 2005,
}
@inproceedings{CTT100390952,
author = {林大祐 and 小菅博明 and 大島憲昭 and 石原宏},
title = {CVD Ru薄膜を下部電極として用いたMo添加BLT強誘電体キャパシタの評価},
booktitle = {2005年(平成17年)春季第52回応用物理学関係連合講演会},
year = 2005,
}
@inproceedings{CTT100390953,
author = {會澤康治 and 田村哲朗 and 有本由弘 and 石原宏},
title = {SBT/HfO2/Si構造デバイスにおけるデータ保持特性の温度依存性},
booktitle = {2005年(平成17年)春季第52回応用物理学関係連合講演会},
year = 2005,
}
@inproceedings{CTT100390954,
author = {高橋憲弘 and 會澤康治 and 田村哲朗 and 有本由弘 and 石原宏},
title = {(Bi,La)4Ti3O12/CVD-HfO2/p-Si 構造の作製と電気的特性評価},
booktitle = {2005年(平成17年)春季第52回応用物理学関係連合講演会},
year = 2005,
}
@inproceedings{CTT100390955,
author = {小原秀一郎 and 會澤康治 and 石原宏},
title = {Pt/Pb5Ge3O11/Pt構造とPt/Pb5Ge3O11/HfO2/Si構造デバイスの評価},
booktitle = {2005年(平成17年)春季第52回応用物理学関係連合講演会},
year = 2005,
}
@inproceedings{CTT100390956,
author = {長谷川聡史 and 田渕良志明 and 加藤一実 and 田村哲朗 and 有本由弘 and 石原宏},
title = {(Bi,Nd)4Ti3O12/CVD HfO2構造を用いたMFISダイオードの作製と評価},
booktitle = {2005年(平成17年)春季第52回応用物理学関係連合講演会},
year = 2005,
}
@inproceedings{CTT100390957,
author = {田渕良志明 and 會澤康治 and 田村哲朗 and 高橋憲弘 and 鉾宏真 and 加藤一実 and 有本由弘 and 石原宏},
title = {(Bi,Nd)4Ti3O12/HfO2/p-type Si 構造を用いたMFIS-FETの特性評価},
booktitle = {2005年(平成17年)春季第52回応用物理学関係連合講演会},
year = 2005,
}
@inproceedings{CTT100390958,
author = {小原秀一郎 and 田村哲朗 and 石原宏},
title = {Pt/(Sr0.8Bi2.2Ta2)x(Bi1.05FeO3)(1-x)/Pt構造デバイスの評価},
booktitle = {2005年（平成17年）秋季第66回応用物理学会学術講演会},
year = 2005,
}
@inproceedings{CTT100390959,
author = {田渕良志明 and 長谷川聡史 and 田村哲朗 and 鉾宏真 and 加藤一実 and 有本由弘 and 石原宏},
title = {(Bi,Nd)4Ti3O12/HfO2/Si構造を用いたMFIS-FETの多値メモリ化の検討},
booktitle = {2005年（平成17年）秋季第66回応用物理学会学術講演会},
year = 2005,
}
@inproceedings{CTT100390960,
author = {長谷川聡史 and 田渕良志明 and 田村哲朗 and 加藤一実 and 有本由弘 and 石原宏},
title = {Pt/BNT((Bi,Nd)4Ti3O12)/HfO2/Siキャパシタのメモリ特性におけるBNT膜厚の影響},
booktitle = {2005年（平成17年）秋季第66回応用物理学会学術講演会},
year = 2005,
}
@inproceedings{CTT100390961,
author = {林大祐 and S. K. Singh and 小菅博明 and 大島憲明 and 石原宏},
title = {CVD法により形成したRu電極を用いたBiFeO3キャパシタの評価},
booktitle = {2005年（平成17年）秋季第66回応用物理学会学術講演会},
year = 2005,
}
@inproceedings{CTT100632301,
author = {Lee Gwang Geun and Yosihisa Fujisaki and Hiroshi Ishiwara and Eisuke Tokumitsu},
title = {Low voltage operation of ferroelectric thin film transistors using P(VDF-TrFE) and IGZO},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100611600,
author = {G.-G. Lee and S.-M. Yoon and J.-W. Yoon and Y. Fujisaki and H. Ishiwara and E. Tokumitsu},
title = {Flexible Ferroelectric-TFTs Using IGZO-Channel and P(VDF-TrFE)},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100622407,
author = {GwangGeun Lee and Sung-ming Yoon and Yosihisa Fujisaki and Hiroshi Ishiwara and Eisuke Tokumitsu},
title = {Fabrication of Organic P(VDF-TrFE) Film on PEN Substrate for Flexible IGZO-channel Ferroelectric-gate TFTs},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100617816,
author = {Gwang-Geun Lee and Sung-Min Yoon and Joo-Won Yoon and Yosihisa Fujisaki and Hiroshi Ishiwara and Eisuke Tokumitsu},
title = {Flexible non-volatile memory TFT with IGZO-channel and ferroelectric polymer},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100604738,
author = {Gwang-Geun Lee and Sung-Min Yoon and Joo-Won Yoon and 藤崎芳久 and 石原宏 and 徳光永輔},
title = {有機強誘電体P(VDF-TrFE)と無機酸化物半導体IGZOを用いた強誘電体ゲート薄膜トランジスタの作製と評価},
booktitle = {信学技報、SDM2010-16、OME2010-16(2010-04)},
year = 2010,
}
@inproceedings{CTT100608345,
author = {Young uk Song and Shun-ichiro Ohmi and Hiroshi Ishiwara},
title = {Investigation of n-type properties of pentacene based on MOS diodes utilizing ultra thin metal interlayer},
booktitle = {春季第５７回応用物理学関係連合講演会予稿集},
year = 2010,
}
@inproceedings{CTT100605090,
author = {GwangGeun Lee and Sung-ming Yoon and JooWon Yoon and Yosihisa Fujisaki and Hiroshi Ishiwara and Eisuke Tokumitsu},
title = {Fabrication of IGZO-channel Ferroelectric-gate TFTs with Organic P(VDF-TrFE) Film},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100589332,
author = {Lee Gwang Geun and Hoowon Yoon and Yosihisa Fujisaki and Hiroshi Ishiwara and Eisuke Tokumitsu},
title = {Ferroelectric Behaviors of P(VDF-TrFE) Thin Films on Transparent ITO Electrode},
booktitle = {第70回 応用物理学会学術講演会},
year = 2009,
}
@inproceedings{CTT100608199,
author = {Joo-Won Yoon and Shun-ichiro Ohmi and Hiroshi Ishiwara},
title = {Retention Characteristics of poly(vinylidenefluoride-trifluoroethylene)MFIS diodes},
booktitle = {春季第56回応用物理学関係連合講演会予稿集},
year = 2009,
}
@inproceedings{CTT100567689,
author = {尹珠元 and 石原宏},
title = {Characterics of MFIS structures based on poly (vinylidene fluoridetrifluoroethylene)},
booktitle = {2008年（平成20年）秋季第69回応用物理学会学術講演会講演予稿集},
year = 2008,
}
@inproceedings{CTT100567581,
author = {鐘志勇 and 石原宏},
title = {Enhanced ferroelectric properties of BiFexCr1-xO3 thin film formed by chemical solution deposition},
booktitle = {2008年（平成20年）秋季第69回応用物理学会学術講演会講演予稿集},
year = 2008,
}
@inproceedings{CTT100567722,
author = {田中敬人 and 安念一規 and 井端雅一 and 石原宏},
title = {平坦化強誘電体膜を用いたC60メモリトランジスタ},
booktitle = {2008年（平成20年）秋季第69回応用物理学会学術講演会講演予稿集},
year = 2008,
}
@inproceedings{CTT100567718,
author = {陸旭兵 and 石原宏},
title = {Improved electrical properties of metal-ferroelectric-insulator-silicon diodes using an epitaxial SrTio3 buffer layer},
booktitle = {2008年（平成20年）秋季第69回応用物理学会学術講演会講演予稿集},
year = 2008,
}
@inproceedings{CTT100567711,
author = {近藤佑美 and 鉾宏真 and 石原宏},
title = {2T型強誘電体メモリのデータディスターブ特性IV},
booktitle = {2008年（平成20年）秋季第69回応用物理学会学術講演会講演予稿集},
year = 2008,
}
@inproceedings{CTT100567707,
author = {鉾宏真 and 川嶋将一郎 and 石原宏},
title = {p-ch MFIS-FETとn-ch MOSFETからなる改良２T型FeRAMセルの電気特性},
booktitle = {2008年（平成20年）秋季第69回応用物理学会学術講演会講演予稿集},
year = 2008,
}
@inproceedings{CTT100567702,
author = {王冬きょう and 石原宏},
title = {Sr2(Ta,Nb)2O7を強誘電体層に用いたMFISの評価},
booktitle = {2008年（平成20年）秋季第69回応用物理学会学術講演会講演予稿集},
year = 2008,
}
@inproceedings{CTT100567682,
author = {金正桓 and 舟窪浩 and 石原宏},
title = {SrRuO3/Pt(111)とPt(111)の上にスパッタで形成されたBiFeO3膜の電気特性評価},
booktitle = {2008年（平成20年）秋季第69回応用物理学会学術講演会講演予稿集},
year = 2008,
}
@inproceedings{CTT100590106,
author = {Mehmet S. Bozgeyik and J. S. Cross and H. Ishiwara and K. Shinozaki},
title = {Effect of Ba and Zr Doping in Sr0.8Bi2.2Ta2O9 Thin Films},
booktitle = {The 2nd International Conference on Science and Technology for Advanced Ceramics (STAC2)},
year = 2008,
}
@inproceedings{CTT100567328,
author = {王冬きょう and 石原宏},
title = {バッファ層を用いたMFISダイオードの評価},
booktitle = {2008年（平成20年）春季第55回応用物理学関係連合講演会講演予稿集},
year = 2008,
}
@inproceedings{CTT100567324,
author = {尹珠元 and 大見俊一郎 and 石原宏},
title = {Ferroelectrics Characteristics of poly (vinylidene fluoride-trifluoroethylene) MFIS diodes},
booktitle = {2008年（平成20年）春季第55回応用物理学関係連合講演会講演予稿集},
year = 2008,
}
@inproceedings{CTT100567323,
author = {陸旭兵 and 杉山芳弘 and 石原宏},
title = {Electrical Properties of ZrSiO4 doped Sr0.8Bi2.2Ta2O9 films},
booktitle = {2008年（平成20年）春季第55回応用物理学関係連合講演会講演予稿集},
year = 2008,
}
@inproceedings{CTT100553767,
author = {尹珠元 and 大見俊一郎 and 石原宏},
title = {Ferroelectrics Characteristics of poly (vinylidene fluoride - trifluoroethylene) MFIS diodes},
booktitle = {第55回応用物理学関係連合講演会講演予稿集},
year = 2008,
}
@inproceedings{CTT100564222,
author = {Mehmet Sait Bozgeyik and Jeffery S. Cross and Hiroshi Ishiwara and Kazuo Shinozaki},
title = {Ferroelectric and Electrical Properties of BaZrO3 Doped Sr0.8Bi2.2Ta2O9 Thin Films},
booktitle = {MRS Spring Meeting},
year = 2008,
}
@inproceedings{CTT100567330,
author = {安念一規 and 田中敬人 and 井端雅一 and 石原宏},
title = {C60フラーレンを用いた強誘電体ゲートトランジスタ(II)},
booktitle = {2008年（平成20年）春季第55回応用物理学関係連合講演会講演予稿集},
year = 2008,
}
@inproceedings{CTT100553764,
author = {尹珠元 and 大見俊一郎 and 石原宏},
title = {Characteristics of metal-ferroelectric-insulartor-semiconductor structures based on poly(vinylidene fluoride-trifluoroethylene)},
booktitle = {電子情報通信学会技術研究報告},
year = 2008,
}
@inproceedings{CTT100567329,
author = {近藤佑美 and 李月剛 and 鉾宏真 and 有本由弘 and 石原宏},
title = {2T型強誘電体メモリのデータディスターブ特性の評価III},
booktitle = {2008年（平成20年）春季第55回応用物理学関係連合講演会講演予稿集},
year = 2008,
}
@inproceedings{CTT100551264,
author = {J-W.Yoon and S.Fujisaki and H.Ishiwara},
title = {Patterning of poly(vinyliden fluoride-trifluoroethylene) thin films by oxygen plasma etching},
booktitle = {4th Conf. on New Exploratory Technologies},
year = 2007,
}
@inproceedings{CTT100551263,
author = {S.K.Singh and K.Maruyama and H.Ishiwara},
title = {Enhanced electrical properties by co-doping of La, Mn and Cr atoms in BiFeO3 thin films},
booktitle = {5th IUMRS Intern. Conf. on Advanced Materials},
year = 2007,
}
@inproceedings{CTT100551255,
author = {HIROSHI ISHIWARA},
title = {Recent Progress in Ferroelectric Memory Technology},
booktitle = {4th Conf. on New Exploratory Technologies},
year = 2007,
}
@inproceedings{CTT100551254,
author = {HIROSHI ISHIWARA},
title = {Current Status and Prospect of Ferroelectric Random Access Memory},
booktitle = {5th IUMRS Intern. Conf. on Advanced Materials},
year = 2007,
}
@inproceedings{CTT100551252,
author = {HIROSHI ISHIWARA},
title = {Current status and prospect of ferroelectric random access memory},
booktitle = {Intern. Sympo. on Organic and Inorganic Electronic Materials and Related Nanotechnologies},
year = 2007,
}
@inproceedings{CTT100551442,
author = {鉾宏真 and 李月剛 and 丸山研二 and 石原宏},
title = {p-ch MFIS-FETとn-ch MOSFETからなる２T型FeRAMセルの電気特性評価},
booktitle = {2007年(平成19年)秋季第68回応用物理学会学術講演会},
year = 2007,
}
@inproceedings{CTT100551444,
author = {李月剛 and 丸山研二 and 鉾宏真 and 有本由弘 and 石原宏},
title = {２T型強誘電体メモリのディスターブ特性の評価},
booktitle = {2007年(平成19年)秋季第68回応用物理学会学術講演会},
year = 2007,
}
@inproceedings{CTT100551445,
author = {井端雅一 and 高下裕一郎 and 石原宏},
title = {カーボンナノチューブを用いた強誘電体ゲート電界効果トランジスタのモデリング},
booktitle = {2007年(平成19年)秋季第68回応用物理学会学術講演会},
year = 2007,
}
@inproceedings{CTT100551446,
author = {高下裕一郎 and 井端雅一 and 石原宏},
title = {強誘電体ゲートカーボンナノチューブトランジスタの作製と真空中における評価},
booktitle = {2007年(平成19年)秋季第68回応用物理学会学術講演会},
year = 2007,
}
@inproceedings{CTT100551447,
author = {安念一規 and 井端雅一 and 石原宏},
title = {C60フラーレンを用いた強誘電体ゲートトランジスタ},
booktitle = {2007年(平成19年)秋季第68回応用物理学会学術講演会},
year = 2007,
}
@inproceedings{CTT100551448,
author = {鍾志勇 and S.K.Singh and 丸山研二 and 石原宏},
title = {A Reduced Coercive Electric Field in Mn-substituted BiFeO3 Thin Films Formed by Chemical Solution Deposition Method},
booktitle = {2007年(平成19年)秋季第68回応用物理学会学術講演会},
year = 2007,
}
@inproceedings{CTT100551431,
author = {藤崎寿美子 and 石原宏 and 藤崎芳久},
title = {薄膜P(VDF-TrFE)コポリマーを用いた強誘電体キャパシタの高速動作},
booktitle = {2007年(平成19年)秋季第68回応用物理学会学術講演会},
year = 2007,
}
@inproceedings{CTT100551432,
author = {尹珠元 and 石原宏},
title = {Ferroelectric Characteristics of Patterned p(VDF-TrFE) Thin Films},
booktitle = {2007年(平成19年)秋季第68回応用物理学会学術講演会},
year = 2007,
}
@inproceedings{CTT100551433,
author = {岡沢昴 and 丸山研二 and 石原宏},
title = {低比誘電率材料Bi2W0.9Mn0.1O6薄膜のMFISデバイスへの適用},
booktitle = {2007年(平成19年)秋季第68回応用物理学会学術講演会},
year = 2007,
}
@inproceedings{CTT100551436,
author = {陸旭兵 and 鉾宏真 and 丸山研二 and 石原宏},
title = {Electrical Properties of Metal-ferroelectric-Insulator-Silicon using HfTaO as Buffer Layer},
booktitle = {2007年(平成19年)秋季第68回応用物理学会学術講演会},
year = 2007,
}
@inproceedings{CTT100551440,
author = {池田武嗣 and 田渕良志明 and 田村哲朗 and 鉾宏真 and 有本由弘 and 石原宏},
title = {MSIF-FETを用いたNAND型強誘電体メモリ回路における書込みディスター},
booktitle = {2007年(平成19年)秋季第68回応用物理学会学術講演会},
year = 2007,
}
@inproceedings{CTT100551253,
author = {HIROSHI ISHIWARA},
title = {Current status of ferroelectric-gate Si transistors and challenge to ferroelectric-gate CNT transistors},
booktitle = {Nano Korea 2007 Sympo.},
year = 2007,
}
@inproceedings{CTT100551250,
author = {HIROSHI ISHIWARA},
title = {Current status and future prospect of FET-type ferroelectric memories},
booktitle = {2nd Intern. Sympo. on Next Generation Non-volatile Memory Technology for Terabit Memory},
year = 2007,
}
@inproceedings{CTT100551259,
author = {X-B.Lu and H.Hoko and K.Maruyama and H.Ishiwara},
title = {Characteristics of MFIS devices using HfSiON buffer layers},
booktitle = {19th Intern. Sympo. on Integrated Ferroelectrics},
year = 2007,
}
@inproceedings{CTT100551262,
author = {S.Fujisaki and Y.Fujisaki and H.Ishiwara},
title = {Excellent ferroelectricity of thin poly (vinylidene fluoride-trifluoroethylene) copolymer films and low voltage operation of capacitors and diodes},
booktitle = {16th IEEE Intern. Sympo. on Applications of Ferroelectrics},
year = 2007,
}
@inproceedings{CTT100551261,
author = {Z-Y.Zhong and S.K.Singh and K.Maruyama and H.Ishiwara},
title = {Ferroelectric properties of Mn-substituted BiFeO3 thin films on Ir electrodes},
booktitle = {16th IEEE Intern. Sympo. on Applications of Ferroelectrics},
year = 2007,
}
@inproceedings{CTT100551258,
author = {S.K.Singh and K.Sato and K.Maruyama and H.Ishiwara},
title = {Frequency dependent polarization in pure and doped BiFeO3 thin films prepared by chemical solution deposition},
booktitle = {19th Intern. Sympo. on Integrated Ferroelectrics},
year = 2007,
}
@inproceedings{CTT100551248,
author = {HIROSHI ISHIWARA},
title = {Recent researches for realizing high-density ferroelectric memories},
booktitle = {Spring Meeting of Mater. Res. Soc. (Sympo. I; Materials and Processes for Nonvolatile Memories)},
year = 2007,
}
@inproceedings{CTT100551257,
author = {S.Fujisaki and Y.Fujisaki and H.Ishiwara},
title = {Large ferroelectricity of thin poly (vinylidene fluoride- trifluoroethylene) copolymer films suitable for non-volatile memory applications},
booktitle = {Spring Meeting of Mater. Res. Soc. (Sympo. I; Materials and Processes for Nonvolatile Memories)},
year = 2007,
}
@inproceedings{CTT100551429,
author = {梅山将志 and 岡沢昴 and 石原宏 and 丸山研二},
title = {Bi2WO6添加Sr0.8Bi2.2Ta2O9を用いたMFIS-FETの動作特性},
booktitle = {2007年(平成19年)春季第54回応用物理学関係連合講演会},
year = 2007,
}
@inproceedings{CTT100551428,
author = {岡沢昴 and 梅山将志 and 丸山研二 and 石原宏},
title = {低比誘電率Bi2WO6薄膜のMFISへの適用},
booktitle = {2007年(平成19年)春季第54回応用物理学関係連合講演会},
year = 2007,
}
@inproceedings{CTT100550831,
author = {李月剛 and 齋藤貢一 and 丸山研二 and 鉾宏真 and 有本由弘 and 石原宏},
title = {2T型強誘電体メモリのディスターブ特性の評価},
booktitle = {2007年(平成19年）春季第54回応用物理学関係連合講演会},
year = 2007,
}
@inproceedings{CTT100550820,
author = {池田武嗣 and 田渕良志明 and 田村哲朗 and 鉾宏真 and 有本由弘 and 石原宏},
title = {MFIS-FETを用いたNAND型強誘電体メモリ回路における書込みディスターブ},
booktitle = {2007年(平成19年）春季第54回応用物理学関係連合講演会},
year = 2007,
}
@inproceedings{CTT100551424,
author = {藤崎寿美子 and 石原 宏},
title = {VDF/TrFE共重合体を用いたMFISダイオードの低電圧動作},
booktitle = {2007年(平成19年)春季第54回応用物理学関係連合講演会},
year = 2007,
}
@inproceedings{CTT100551425,
author = {井端雅一 and 高下裕一郎 and 石原宏},
title = {カーボンナノチューブを用いた強誘電体ゲート電界効果トランジスタ},
booktitle = {2007年(平成19年)春季第54回応用物理学関係連合講演会},
year = 2007,
}
@inproceedings{CTT100551427,
author = {高下裕一郎 and 白尾瑞基 and 矢野亜季 and 井端雅一 and 石原宏},
title = {強誘電体ゲートカーボンナノチューブトランジスタの作製と評価},
booktitle = {2007年(平成19年)春季第54回応用物理学関係連合講演会},
year = 2007,
}
@inproceedings{CTT100524907,
author = {H.Ishiwara},
title = {Recent progress in ferroelectric memory technology},
booktitle = {8th Intern. Conf. on Solid-State and Integrated Circuit Technology},
year = 2006,
}
@inproceedings{CTT100551246,
author = {H.Ishiwara},
title = {Recent progress in ferroelectric memory technology},
booktitle = {8th Intern. Conf. on Solid-State and Integrated Circuit Technology},
year = 2006,
}
@inproceedings{CTT100551256,
author = {S.K.Singh and Y-K.Kim and H.Funakubo and H.Ishiwara},
title = {Epitaxial BiFeO3 multiferroic thin films fabricated by chemical solution deposition},
booktitle = {IUMRS Intern. Conf. in Asia},
year = 2006,
}
@inproceedings{CTT100525161,
author = {齋藤貢一 and 石原宏},
title = {シリケート添加によるSBT薄膜の比誘電率制御},
booktitle = {2006年(平成18年）秋季第67回応用物理学会学術講演会},
year = 2006,
}
@inproceedings{CTT100525158,
author = {Byung-Eun Park and Hiroshi Ishiwara},
title = {Characterization of Polyvinylidene fluoride thin films by sol-gel method},
booktitle = {2006年(平成18年）秋季第67回応用物理学会学術講演会},
year = 2006,
}
@inproceedings{CTT100522130,
author = {鉾宏真 and 田渕良志明 and 丸山研二 and 石原宏},
title = {SrBi2Ta2O9とHfSiONを強誘電体膜とバッファ層に用いたMFIS-FETの特性評価},
booktitle = {2006年(平成18年）秋季第67回応用物理学会学術講演会},
year = 2006,
}
@inproceedings{CTT100522134,
author = {田渕良志明 and 長谷川聡志 and 田村哲朗 and 鉾宏真 and 加藤一実 and 有本由弘 and 石原宏},
title = {弱電界におけるPt/(Bi,Nd)4Ti3O12/Ptキャパシタの疲労現象},
booktitle = {2006年(平成18年）秋季第67回応用物理学会学術講演会},
year = 2006,
}
@inproceedings{CTT100525178,
author = {梅山将志 and 石原宏 and 丸山研二 and 田村哲朗},
title = {Pt/Sr0.8Bi2.2Ta2O9/HfO2/Si構造MFISダイオードにおけるバッファ層膜厚の最適化},
booktitle = {2006年(平成18年）秋季第67回応用物理学会学術講演会},
year = 2006,
}
@inproceedings{CTT100524909,
author = {S.K.Singh and H.Ishiwara},
title = {Excellent Room-Temperature Ferroelectricity in Mn-substituted BiFeO3 Thin Films Formed by Chemical Solution Deposition},
booktitle = {Spring Meeting of Mater. Res. Soc. (Sympo. G; Science and Technology of Nonvolatile Memories)},
year = 2006,
}
@inproceedings{CTT100524913,
author = {H.Ishiwara},
title = {Ferroelectric FET Memory},
booktitle = {ITRS workshop on Assessment of Options for Emerging Research Memory Devices},
year = 2006,
}
@inproceedings{CTT100524912,
author = {S.K.Singh and Y-K.Kim and H.Kuwabara and H.Funakubo and H.Ishiwara},
title = {Strain effect due to the bottom electrodes in epitaxial BiFeO3 films formed by chemical solution deposition},
booktitle = {18th Intern. Sympo. on Integrated Ferroelectrics},
year = 2006,
}
@inproceedings{CTT100524906,
author = {H.Ishiwara and S.K.Singh},
title = {Characteristics of BiFeO3 thin films prepared by chemical solution deposition},
booktitle = {18th Intern. Sympo. on Integrated Ferroelectrics},
year = 2006,
}
@inproceedings{CTT100524910,
author = {S.K.Singh and H.Ishiwara and K.Maruyama},
title = {Site-engineering of BiFeO3 thin films for obtaining ferroelectric properties at room temperature},
booktitle = {18th Intern. Sympo. on Integrated Ferroelectrics},
year = 2006,
}
@inproceedings{CTT100524911,
author = {Y.Tabuchi and S.Hasegawa and T.Tamura and H.Hoko and K.Kato and Y.Arimoto and H.Ishiwara},
title = {Multi-bit programming for MFIS-FET using Pt/(Bi,Nd)4Ti3O12/HfO2/n-type Si structures},
booktitle = {18th Intern. Sympo. on Integrated Ferroelectrics},
year = 2006,
}
@inproceedings{CTT100525142,
author = {鉾宏真 and 田渕良志明 and 田村哲朗 and 丸山研二 and 石原宏},
title = {HfSiON膜バッファ層を用いたPt/(Bi,La)4Ti3O12/HfSiON/Si構造の強誘電体ゲートFETの特性},
booktitle = {2006年(平成18年)春季第53回応用物理学関係連合講演会},
year = 2006,
}
@inproceedings{CTT100525144,
author = {小原秀一郎 and 田村哲朗 and 丸山研二 and 石原宏},
title = {Sr2(Ta,Nb)2O7/HfO2/Si構造デバイスの作製と評価},
booktitle = {2006年(平成18年)春季第53回応用物理学関係連合講演会},
year = 2006,
}
@inproceedings{CTT100525145,
author = {林大祐 and S.K.Singh and 大島憲昭 and 丸山研二 and 石原宏},
title = {PtならびにRu電極上へのMnドープBiFeO3膜の形成},
booktitle = {2006年(平成18年)春季第53回応用物理学関係連合講演会},
year = 2006,
}
@inproceedings{CTT100525143,
author = {田渕良志明 and 長谷川聡志 and 田村哲朗 and 鉾宏真 and 加藤一実 and 有本由弘 and 石原宏},
title = {MFIS-FETのメモリウィンドウ測定による分極状態の評価},
booktitle = {2006年(平成18年)春季第53回応用物理学関係連合講演会},
year = 2006,
}
@inproceedings{CTT100408688,
author = {S.K.Singh and H.Ishiwara},
title = {Enhanced electrical properties in Mn-doped Bi3.35La0.75Ti3O12 thin film},
booktitle = {Fall Meeting of Mater. Res. Soc. (Sympo. T ; Ferroelectric Thin Films XIII)},
year = 2005,
}
@inproceedings{CTT100408689,
author = {S.K.Singh and H.Ishiwara},
title = {Improved insulating properties in La-doped BiFeO3 films fabricated by chemical solution deposition},
booktitle = {Fall Meeting of Mater. Res. Soc. (Sympo. U ; Multiferroic materials)},
year = 2005,
}
@inproceedings{CTT100383128,
author = {金泫秀 and 山本修一郎 and 石川徹 and 大木博 and 石原宏},
title = {1T2C型強誘電体メモリアレイの作製と評価},
booktitle = {第65回応用物理学会学術講演会講演予稿集},
year = 2004,
}
@inproceedings{CTT100536342,
author = {Sung-ming YOON and Eisuke TOKUMITSU and Hiroshi ISHIWARA},
title = {Realization of adaptive learning function in a neuron circuit using metal/ferroelectric (SrBi2Ta2O9)/semiconductor field effect transisitor (MFSFET)},
booktitle = {Jpn. J. Appl. Phys.},
year = 1999,
}
@inproceedings{CTT100417463,
author = {Sung-ming YOON and Yuji KURITA and Eisuke TOKUMITSU and Hiroshi ISHIWARA},
title = {Electrical Characteristics of Neuron Oscillation Circuits Composed of MOSFETs and Complementary Unijunction Transistors},
booktitle = {Japanese Journal Applied Physics},
year = 1998,
}
@inproceedings{CTT100417175,
author = {Eisuke TOKUMITSU and Kensuke ITANI and Bum-Ki MOON and Hiroshi ISHIWARA},
title = {Crystalline Quality and Electrical Properties of PbZrxTi1-xO3 Thin Films Prepared on SrTiO3-Covered Si Substrates},
booktitle = {Japanese Journal of Applied Physics},
year = 1995,
}
@inproceedings{CTT100536171,
author = {Eisuke Tokumitsu and Kensuke Itani and Bum-Ki Moon and Hiroshi Ishiwara},
title = {Preparation of PbZrxTi1-xO3 Films on Si Substrates using SrTiO3 Buffer Layers},
booktitle = {Materials Research Society Symposium Proceedings},
year = 1994,
}
@misc{CTT100542018,
author = {石原宏},
title = {トランジスタ型強誘電体メモリ開発の現状と将来展望},
year = 2005,
}
@misc{CTT100524908,
author = {石原宏},
title = {トランジスタ型強誘電体メモリの現状と展望},
year = 2006,
}
@misc{CTT100422069,
author = {神保武人 and 佐野春行 and 舟窪浩 and 徳光永輔 and 石原宏},
title = {プラズマプロセスを用いた溶液気化MOCVD法によるSrBi2Ta2O9薄膜の作製},
year = 1999,
}
@misc{CTT100594127,
author = {石原宏},
title = {イオン注入法を用いた半導体素子製作に関する研究},
year = 1973,
}
@misc{CTT100595646,
author = {HIROSHI ISHIWARA},
title = {注入イオン分布に関する理論的研究},
year = 1970,
}
@misc{CTT100600028,
author = {石原宏 and 丸山 研二 and 川嶋 将一郎 and 鉾 宏真},
title = {強誘電体メモリ},
howpublished = {公開特許},
year = 2009,
month = {},
note = {特願2008-078090(2008/03/25), 特開2009-230835(2009/10/08)}
}
@misc{CTT100600040,
author = {石原宏 and 丸山 研二 and 川嶋 将一郎 and 鉾 宏真},
title = {強誘電体メモリセルおよび強誘電体メモリ},
howpublished = {公開特許},
year = 2009,
month = {},
note = {特願2008-078089(2008/03/25), 特開2009-230834(2009/10/08)}
}
@misc{CTT100600048,
author = {石原宏 and スシル クマル シン and 鉾 宏真 and 杉山 芳弘},
title = {半導体装置及びその製造方法},
howpublished = {公開特許},
year = 2009,
month = {},
note = {特願2008-069338(2008/03/18), 特開2009-224668(2009/10/01)}
}
@misc{CTT100573330,
author = {石原宏 and スシル クマル シン and 丸山 研二 and 近藤 正雄},
title = {半導体装置及びその製造方法},
howpublished = {公開特許},
year = 2008,
month = {},
note = {特願2007-092413(2007/03/30), 特開2008-251907(2008/10/16)}
}
@misc{CTT100572906,
author = {石原宏 and スシル クマル シン and 丸山 研二 and 近藤 正雄},
title = {半導体装置及びその製造方法},
howpublished = {公開特許},
year = 2008,
month = {},
note = {特願2006-253569(2006/09/19), 特開2008-078248(2008/04/03)}
}
@misc{CTT100572984,
author = {石原宏 and 丸山 研二 and 田村 哲朗 and 鉾 宏真},
title = {半導体素子及びそれを用いた半導体記憶装置、及びそのデータ書込み方法、データ読出し方法、及びそれらの製造方法},
howpublished = {公開特許},
year = 2007,
month = {},
note = {特願2006-229896(2006/08/25), 特開2007-214532(2007/08/23)}
}
@misc{CTT100573408,
author = {石原宏 and Singh Kumar Sushil and 丸山 研二 and 近藤 正雄 and 佐藤 桂輔},
title = {半導体装置および半導体装置の製造方法},
howpublished = {公開特許},
year = 2007,
month = {},
note = {特願2006-042921(2006/02/20), 特開2007-221066(2007/08/30)}
}
@misc{CTT100572806,
author = {石原宏 and 會澤康治 and 青木 千恵子 and 鉾 宏真 and 田村 哲朗 and 丸山 研二},
title = {強誘電体キャパシタ、強誘電体メモリ、及びそれらの製造方法},
howpublished = {公開特許},
year = 2007,
month = {},
note = {特願2005-302611(2005/10/18), 特開2007-115733(2007/05/10)}
}
@misc{CTT100573454,
author = {石原宏 and 田渕 良志明 and 高橋 憲弘 and 長谷川 聡志 and 會澤康治 and 有本 由弘 and 田村 哲朗 and 鉾 宏真 and 山口 正臣 and 奈良 安雄},
title = {強誘電体メモリ、多値データ記録方法、および多値データ読出し方法},
howpublished = {公開特許},
year = 2006,
month = {},
note = {特願2005-252504(2005/08/31), 特開2006-108648(2006/04/20)}
}
@phdthesis{CTT100594127,
author = {石原宏},
title = {イオン注入法を用いた半導体素子製作に関する研究},
school = {東京工業大学},
year = 1973,
}
@mastersthesis{CTT100595646,
author = {HIROSHI ISHIWARA},
title = {注入イオン分布に関する理論的研究},
school = {東京工業大学},
year = 1970,
}