@book{CTT100448959,
  author = {SHUN-ICHIRO OHMI},
  title = {Advances in the Understanding of Crystal Growth Mechanisms},
  publisher = {Elsevier Science},
  year = 1997,
}

@article{CTT100822933,
  author = {Joel Molina-Reyes and Takuya Hoshii and Shun-Ichiro Ohmi and Hiroshi Funakubo and Atsushi Hori and Ichiro Fujiwara and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films},
  journal = {Japanese Journal of Applied Physics},
  year = 2020,
}

@article{CTT100821138,
  author = {Joel Molina-Reyes and Takuya Hoshii and Shun-Ichiro Ohmi and Hiroshi Funakubo and Atsushi Hori and Ichiro Fujiwara and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films},
  journal = {Jpn. J. Appl. Phys.},
  year = 2020,
}

@article{CTT100802391,
  author = {Kudoh, Sohya and Shun-ichiro OHMI},
  title = {Influence of Si(100) surface flattening process on nonvolatile memory characteristics of Hf-based MONOS structures},
  journal = {2017 75TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC)},
  year = 2017,
}

@article{CTT100802374,
  author = {Shun-ichiro OHMI and Hiroki, Mizuha and Maeda, Yasutaka},
  title = {Narrow Line Crystallization of Rubrene Thin Film Enhanced by Yb Interfacial Layer for Single Crystal OFET Application},
  journal = {2017 75TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC)},
  year = 2017,
}

@article{CTT100802304,
  author = {Shun-ichiro OHMI and Liu, Yeyuan},
  title = {In-situ formation of Hf-based MONOS structures for non-volatile memory applications},
  journal = {IEICE ELECTRONICS EXPRESS},
  year = 2015,
}

@article{CTT100802301,
  author = {工藤 聡也 and 大見俊一郎},
  title = {開放型熱処理装置を用いたSi表面平坦化プロセスの検討 (シリコン材料・デバイス)},
  journal = {電子情報通信学会技術研究報告 = IEICE technical report : 信学技報},
  year = 2014,
}

@article{CTT100802258,
  author = {前田 康貴 and 大見俊一郎 and 後藤 哲也 and 大見 忠弘},
  title = {窒素添加LaB₆薄膜のデバイス応用に関する検討 (シリコン材料・デバイス)},
  journal = {電子情報通信学会技術研究報告 = IEICE technical report : 信学技報},
  year = 2013,
}

@article{CTT100801564,
  author = {Han, H.S. and Han, D.H. and Shun-ichiro OHMI},
  title = {Potential of MISFET with HfN gate dielectric formed by ECR plasma sputtering},
  journal = {Electronics Letters},
  year = 2013,
}

@article{CTT100802381,
  author = {Han, Huiseong and Shun-ichiro OHMI},
  title = {Hafnium-nitride gate insulator formed by electron-cyclotron-resonance plasma sputtering},
  journal = {IEICE ELECTRONICS EXPRESS},
  year = 2012,
}

@article{CTT100802133,
  author = {大見俊一郎},
  title = {混晶化によるPtSiのコンタクト抵抗低減に関する検討},
  journal = {電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス},
  year = 2011,
}

@article{CTT100801289,
  author = {Liao, M. and Ishiwara, H. and Shun-ichiro OHMI},
  title = {Performance improvement of pentacene based organic field-effect transistor with HfON gate insulator},
  journal = {IEICE Electronics Express},
  year = 2011,
}

@article{CTT100801514,
  author = {Shun-ichiro OHMI and Gao, J.},
  title = {Low contact resistivity of barrier height controlled PtHfSi to Si evaluated by cross-bridge Kelvin resistor},
  journal = {IEICE Electronics Express},
  year = 2011,
}

@article{CTT100801385,
  author = {Sano, T. and Shun-ichiro OHMI},
  title = {Selective etching of HfN gate electrode for HfN/HfSiON gate stack in-situ formations},
  journal = {IEICE Electronics Express},
  year = 2011,
}

@article{CTT100801072,
  author = {Ishikawa, J. and Gao, J. and Shun-ichiro OHMI},
  title = {Work function modulation of PtSi by alloying with Yb},
  journal = {IEICE Electronics Express},
  year = 2011,
}

@article{CTT100801380,
  author = {Gao, J. and Ishikawa, J. and Shun-ichiro OHMI},
  title = {A study on precise control of PtSi work function by alloying with Hf},
  journal = {IEICE Electronics Express},
  year = 2011,
}

@article{CTT100801920,
  author = {佐野 貴洋 and 大見俊一郎},
  title = {ECRスパッタ法によるHfN/HfSiON積層構造の in-situ 形成},
  journal = {電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス},
  year = 2010,
}

@article{CTT100801840,
  author = {高 峻 and 石川 純平 and 大見俊一郎},
  title = {Hf混晶化によるPtSiの高精度仕事関数制御に関する検討},
  journal = {電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス},
  year = 2010,
}

@article{CTT100802088,
  author = {高 峻 and 石川 純平 and 大見俊一郎},
  title = {2段階シリサイド化によるHf混晶化極薄PtSiの耐熱性向上に関する検討},
  journal = {電子情報通信学会論文誌. C, エレクトロニクス = The transactions of the Institute of Electronics, Information and Communication Engineers. C},
  year = 2010,
}

@article{CTT100802302,
  author = {石川 純平 and 高 峻 and 大見俊一郎},
  title = {Yb混晶化PtSiの仕事関数変調機構},
  journal = {電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス},
  year = 2010,
}

@article{CTT100585512,
  author = {M. Akhtaruzzaman and S. Ohmi and J. Nishida and Y. Yamashita and H. Ishiwara},
  title = {Study on Stability of Pentacene-Based Metal-Oxide-Semiconductor Diodes in Air Using Capacitance-Voltage Characteristics},
  journal = {Japan J. Appl. Phys.},
  year = 2009,
}

@article{CTT100553732,
  author = {J. Kato and H. Oka and K. Kanemoto and H. Hisamatsu and Y. Matsuzawa and Y. Kitano and T. Hara and M. Hoshina and S. Ohmi},
  title = {Mechanism of Selective Etching of SiGe Layers in SiGe/Si Systems},
  journal = {ECS Transactions},
  year = 2007,
}

@article{CTT100553733,
  author = {Shun-ichiro OHMI and K. Kanemoto and H. Oka and H. Hisamatsu and Y. Matsuzawa and Y. Kitano and T. Hara and M. Hoshina and S. Ohmi and J. Kato},
  title = {Fabrication of SOI MOSFET by “Separation by Bonding Silicon Islands (SBSI) Method},
  journal = {ECS Transactions},
  year = 2007,
}

@article{CTT100543460,
  author = {S. Ohmi and T. Sakai},
  title = {A Proposal of TC-MOSFET and Fabrication Process of Twin Si Channels},
  journal = {IEICE Trans. Electron.},
  year = 2007,
}

@article{CTT100543459,
  author = {S. Ohmi and T. Kurose and M. Sato},
  title = {Ultrathin HfOxNy Gate Insulator Formation by Electron Cyclotron resonance Ar/N2 Plasma nitridation of HfO2 Thin Films},
  journal = {IEICE Trans. Electron.},
  year = 2006,
}

@article{CTT100600433,
  author = {Hiroshi Nohira and T. Yoshida and H. Okamoto and S. Shinagawa and W. Sakai and K. Nakajima and M. Suzuki and K. Kimura and NJ. Aun and Y. Kobayashi and Shun-ichiro OHMI and HIROSHI IWAI and E. Ikenaga and Y. Tanaka and K. Kobayashi and takeo hattori},
  title = {Thermal stability of Gd2O3/Si(100) interfacial transition layer},
  journal = {JOURNAL DE PHYSIQUE IV},
  year = 2006,
}

@article{CTT100409682,
  author = {J.-A. Ng and Y. Kuroki and N. Sugii and K. Kakushima and S. Ohmi and K. Tsutsui and T. Hattori and H. Iwai and H. Wong},
  title = {Effects of low temperature annealing on the ultrathin La2O3 gate dielectric; comparison of post deposition annealing and post metallization annealing},
  journal = {Microelectron. Eng.},
  year = 2005,
}

@article{CTT100389036,
  author = {吉田徹史 and 松田徹 and 岡本英介 and 品川盛治 and 野平博司 and 中川健太郎 and 黒木裕介 and 宮内邦裕 and 大見俊一郎 and 岩井洋 and 池永英司 and 高田恭孝 and 小林啓介 and 服部健雄},
  title = {LaO<sub>x</sub>/YO<sub>x</sub>/Si界面組成遷移層の化学結合状態の熱処理依存性},
  journal = {第52回応用物理学関係連合講演会講演予稿集},
  year = 2005,
}

@article{CTT100389820,
  author = {福山享 and 金容湜 and 大見俊一郎 and 筒井一生 and 岩井洋},
  title = {MIM構造の高誘電率La<sub>2</sub>O<sub>3</sub>薄膜におけるリーク電流機構},
  journal = {第52回応用物理学関係連合講演会講演予稿集},
  year = 2005,
}

@article{CTT100389035,
  author = {黒瀬朋紀 and 内川偉史 and 大見俊一郎 and 酒井徹志},
  title = {HfNのECR Ar/O<sub>2</sub>プラズマ酸化により形成したHfO<sub>x</sub>N<sub>y</sub>薄膜の熱処理に関する検討},
  journal = {第52回応用物理学関係連合講演会講演予稿集},
  year = 2005,
}

@article{CTT100399499,
  author = {T. Kurose and T. Uchikawa and S. Ohmi and T. Sakai},
  title = {ECR Ar/O<sub>2</sub> Plasma Oxidation of HfN Thin Films for High Dielectric HfO<sub>x</sub>N<sub>y</sub> Formations},
  journal = {Trans. Mat. Res. Soc. Japan},
  year = 2005,
}

@article{CTT100399495,
  author = {Y. Kim and K. Miyauchi and S. Ohmi and K. Tsutsui and H. Iwai},
  title = {Electrical properties of vacuum annealed La<sub>2</sub>O<sub>3</sub> thin films grown by E-beam evaporation},
  journal = {Microelectronics Journal},
  year = 2005,
}

@article{CTT100399496,
  author = {Y. Kim and S. Ohmi and K. Tsutsui and H. Iwai},
  title = {Analysis of variation in leakage currents of Lanthana thin films},
  journal = {Solid-State Electronics},
  year = 2005,
}

@article{CTT100399497,
  author = {T. Yamazaki and S. Ohmi and S. Morita and H. Ohri and J. Murota and M. Sakuraba and H. Omi and T. Sakai},
  title = {Separation by Bonding Si Iskands (SBSI) for LSI Applications},
  journal = {Materials Science in Semiconductor Processing},
  year = 2005,
}

@article{CTT100399498,
  author = {T. Yamazaki and S. Ohmi and S. Morita and H. Ohri and J. Murota and M. Sakuraba and H. Omi and T. Sakai},
  title = {Separation by Bonding Si Islands (SBSI) for Advanced CMOS LSI Applications},
  journal = {IEICE Trans. Electron.},
  year = 2005,
}

@article{CTT100399493,
  author = {Junichi Tonotani and Shun-ichiro Ohmi and Hiroshi Iwai},
  title = {Dry Etching of Cr<sub>2</sub>O<sub>3</sub>/Cr Stacked Film during Resist Ashing by Oxygen Plasma},
  journal = {Jpn. J. Appl. Phys.},
  year = 2005,
}

@article{CTT100387050,
  author = {黄仁安 and 栗山篤 and 大見俊一郎 and 筒井一生 and 岩井洋},
  title = {La<sub>2</sub>O<sub>3</sub>薄膜に対する熱処理に関する検討},
  journal = {第51回応用物理学関係連合講演会},
  year = 2004,
}

@article{CTT100387051,
  author = {吉田丈治 and ヘンドリアッシャサウッディン and 大見俊一郎 and 筒井一生 and 岩井洋},
  title = {La<sub>2</sub>O<sub>3</sub>をゲート絶縁膜に用いたMISFETの低周波ノイズのアニール雰囲気依存性},
  journal = {第51回応用物理学関係連合講演会},
  year = 2004,
}

@article{CTT100387053,
  author = {宮内邦裕 and 大見俊一郎 and 筒井一生 and 岩井洋},
  title = {La<sub>2</sub>O<sub>3</sub>薄膜における電気特性のアニール時間依存性},
  journal = {第51回応用物理学関係連合講演会},
  year = 2004,
}

@article{CTT100387054,
  author = {金容提 and 大見俊一郎 and 筒井一生 and 岩井洋},
  title = {高誘電率La<sub>2</sub>O<sub>3</sub>薄膜におけるリーク電流機構の解析},
  journal = {第51回応用物理学関係連合講演会},
  year = 2004,
}

@article{CTT100387055,
  author = {内川偉史 and 山中剛 and 大見俊一郎 and 酒井徹志},
  title = {ECRスパッタ法により形成したHfO<sub>x</sub>N<sub>y</sub>薄膜の熱処理に関する検討},
  journal = {第51回応用物理学関係連合講演会},
  year = 2004,
}

@article{CTT100387056,
  author = {古山直人 and 加藤有亮 and 大見俊一郎 and 酒井徹志},
  title = {極浅プレアモルファス層によるTiSi<sub>2</sub>形成膜厚制御},
  journal = {第51回応用物理学関係連合講演会},
  year = 2004,
}

@article{CTT100387057,
  author = {加藤有亮 and 古山直人 and 鈴木貴也 and 大見俊一郎 and 酒井徹志},
  title = {極薄SOI上に形成したPtSiの耐熱性},
  journal = {第51回応用物理学関係連合講演会},
  year = 2004,
}

@article{CTT100387058,
  author = {山崎崇 and 関川智英 and 袴田佳孝 and 大見俊一郎 and 酒井徹志},
  title = {Si/SiGe/Si構造におけるSiGe層選択エッチングのGe組成比およびアニール温度依存性},
  journal = {第51回応用物理学関係連合講演会},
  year = 2004,
}

@article{CTT100387832,
  author = {大理洋征龍 and 山崎崇 and 盛田伸也 and 関川智英 and 大見俊一郎 and 酒井徹志},
  title = {SiGe/Si層におけるSiGe層選択エッチング特性},
  journal = {第51回応用物理学関係連合講演会},
  year = 2004,
}

@article{CTT100387833,
  author = {佐藤貴久 and 田村秀貴 and 檜垣良太 and 佐々木雄一朗 and 水野文二 and 筒井一生 and 大見俊一郎 and 岩井洋},
  title = {プラズマドーピング後の基板洗浄がドーズに与える影響},
  journal = {第51回応用物理学関係連合講演会},
  year = 2004,
}

@article{CTT100387834,
  author = {高木克洋 and 佐藤貴久 and 田村秀貴 and 筒井一生 and 佐々木雄一朗 and 水野文二 and 大見俊一郎 and 岩井洋},
  title = {プラズマドーピングにおけるHeプラズマ後処理による不純物プロファイル制御},
  journal = {第51回応用物理学関係連合講演会},
  year = 2004,
}

@article{CTT100387835,
  author = {中港努 and 世古裕亮 and 大見俊一郎 and 酒井徹志},
  title = {新構造Double-Gate MOSFETの作製プロセスに関する検討},
  journal = {第51回応用物理学関係連合講演会},
  year = 2004,
}

@article{CTT100387838,
  author = {黒瀬朋紀 and 内川偉史 and 大見俊一郎 and 酒井徹志},
  title = {HfNのECR Ar/O<sub>2</sub>プラズマ酸化によるHfO<sub>x</sub>N<sub>y</sub>薄膜の形成},
  journal = {第65回応用物理学会学術講演会},
  year = 2004,
}

@article{CTT100387840,
  author = {黒木裕介 and 黄仁安 and 栗山篤 and 大見俊一郎 and 筒井一生 and 岩井洋},
  title = {La<sub>2</sub>O<sub>3</sub>をゲート絶縁膜に用いたMISFETにおけるポストメタライゼーションアニールの効果に関する検討},
  journal = {第65回応用物理学会学術講演会},
  year = 2004,
}

@article{CTT100387842,
  author = {福山享 and 金容提 and 大見俊一郎 and 筒井一生 and 岩井洋},
  title = {高誘電率La<sub>2</sub>O<sub>3</sub>薄膜におけるリーク電流機構の解析},
  journal = {第65回応用物理学会学術講演会},
  year = 2004,
}

@article{CTT100387843,
  author = {吉崎智史 and 吉田丈治 and 大見俊一郎 and 筒井一生 and 岩井洋},
  title = {La<sub>2</sub>O<sub>3</sub>をゲート絶縁膜に用いたMISFETの低周波ノイズのアニール温度依存性},
  journal = {第65回応用物理学会学術講演会},
  year = 2004,
}

@article{CTT100387846,
  author = {吉田徹史 and 岡本英介 and 品川盛治 and 野平博司 and 酒井渉 and 中島薫 and 鈴木基史 and 木村健二 and 吉田丈治 and 大見俊一郎 and 岩井洋 and 池永英司 and 高田恭孝 and 辛埴 and 小林啓介 and 服部健雄},
  title = {GdO<sub>x</sub>/Si界面組成遷移層の化学結合状態の深さ方向分布の熱処理依存性},
  journal = {第65回応用物理学会学術講演会},
  year = 2004,
}

@article{CTT100387847,
  author = {野平博司 and 吉田徹史 and 岡本英介 and 品川盛治 and 酒井渉 and 中島薫 and 鈴木基史 and 木村健二 and Ng Jin Aun and 小林洋一 and 宮内邦裕 and 吉田丈治 and 大見俊一郎 and 岩井洋 and 池永英司 and 高田恭孝 and 辛},
  title = {LaO<sub>x</sub>/Si界面組成遷移層の化学結合状態の熱処理依存性},
  journal = {第65回応用物理学会学術講演会},
  year = 2004,
}

@article{CTT100387848,
  author = {大理洋征龍 and 山崎崇 and 盛田伸也 and 袴田佳孝 and 大見俊一郎 and 酒井徹志},
  title = {極薄SOI層と素子間分離領域を一体化する新技術:SBSI(Separation by Bonding Si Islands) -Si島とSi基板間の熱酸化-},
  journal = {第65回応用物理学会学術講演会},
  year = 2004,
}

@article{CTT100488326,
  author = {S. Ohmi and M. Takeda and H. Ishiwara and H. Iwai},
  title = {Characterization of Lu<sub>2</sub>O<sub>3</sub> Thin Films Fabricated by E-beam Deposition Method},
  journal = {J. Electrochem. Soc.},
  year = 2004,
}

@article{CTT100496365,
  author = {D. Sasaki and S. Ohmi and M. Sakuraba and J. Murota and T. Sakai},
  title = {Proposal of a multi-layer channel MOSFET: the application of selective etching for Si/SiGe stacked layers},
  journal = {Applied Surface Scienece},
  year = 2004,
}

@article{CTT100488327,
  author = {S. Ohmi and H. Yamamoto and J. Taguchi and K. Tsutsui and H. Iwai},
  title = {Effect of Post Dielectric Deposition and Post Metallization Annealing Processes on Metal/Dy<sub>2</sub>O<sub>3</sub>/Si(100) Diode Characteristics},
  journal = {Jpn. J. Appl. Phys.},
  year = 2004,
}

@article{CTT100488325,
  author = {D. Sasaki and S. Ohmi and M. Sakuraba and J. Murota and T. Sakai},
  title = {Proposal of Multi-Layer Channel MOSFET: The Application of Selective Etching for Si/SiGe Stacked Layers},
  journal = {Appl. Surf. Sci.},
  year = 2004,
}

@article{CTT100495761,
  author = {吉原義昭 and 大島千鶴 and 大見俊一郎 and 岩井洋},
  title = {高誘電率希土類酸化物薄膜のSi基板表面処理の効果},
  journal = {第63回応用物理学会学術講演会講演予稿集},
  year = 2003,
}

@article{CTT100495762,
  author = {金容湜 and 大見俊一郎 and 筒井一生 and 岩井洋},
  title = {MBE 法により形成した高誘電率La<sub>2</sub>O<sub>3</sub>薄膜における電気特性},
  journal = {第50回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100495763,
  author = {吉原義昭 and 大島千鶴 and 大見俊一郎 and 筒井一生 and 岩井洋},
  title = {La<sub>2</sub>O<sub>3</sub>薄膜の電気特性におけるSi基板表面処理の効果},
  journal = {第50回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100495764,
  author = {上田功 and 大見俊一郎 and 筒井一生 and 岩井洋},
  title = {高誘電率希土類酸化物の積層構造に関する検討},
  journal = {第50回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100495765,
  author = {中嶋薫 and 城森慎司 and 鈴木基史 and 木村健二 and 大見俊一郎 and 岩井洋},
  title = {La<sub>2</sub>O<sub>3</sub>, Gd<sub>2</sub>O<sub>3</sub>およびLu<sub>2</sub>O<sub>3</sub>極薄膜の高分解能RBS による分析},
  journal = {第50回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100495766,
  author = {白石貴義 and 竹林一騎 and 高橋健介 and 野平博司 and 柏木郁未 and 大島千鶴 and 大見俊一郎 and 岩井洋 and 城森慎司 and 中嶋薫 and 鈴木基史 and 木村健二 and 服部健雄},
  title = {LuO<sub>x</sub>極薄膜の深さ方向組成・化学結合状態分析},
  journal = {第50回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100495767,
  author = {吉田徹史 and 白石貴義 and 高橋健介 and 野平博司 and 柏木郁未 and 大島千鶴 and 大見俊一郎 and 岩井洋 and 城森慎司 and 中嶋薫 and 鈴木基史 and 木村健二 and 服部健雄},
  title = {LuO<sub>x</sub>極薄膜中のシリケート},
  journal = {第50回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100495768,
  author = {野平博司 and 白石貴義 and 高橋健介 and 柏木郁未 and 大島千鶴 and 大見俊一郎 and 岩井洋 and 城森慎司 and 中嶋薫 and 鈴木基史 and 木村健二 and 高田恭孝 and 小林啓介 and 辛埴 and 服部健雄},
  title = {希土類酸化物極薄膜中のシリケートとシリサイド},
  journal = {第50回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100495769,
  author = {大島千鶴 and 吉原義昭 and 大見俊一郎 and 筒井一生 and 岩井洋},
  title = {高誘電率Gd<sub>2</sub>O<sub>3</sub>薄膜のSi 基板表面処理の効果},
  journal = {第50回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100495770,
  author = {栗山篤 and 大見俊一郎 and 筒井一生 and 岩井洋},
  title = {希土類酸化物薄膜におけるポストアニールに関する検討},
  journal = {第50回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100495771,
  author = {柏木郁未 and 大見俊一郎 and 筒井一生 and 岩井洋},
  title = {希土類酸化物の電気特性におけるSi基板面方位依存性},
  journal = {第50回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100495773,
  author = {山本浩之 and 栗山篤 and 大見俊一郎 and 筒井一生 and 岩井洋},
  title = {希土類酸化物薄膜における超高真空アニールの効果に関する検討},
  journal = {第50回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100495774,
  author = {戸野谷純一 and 大見俊一郎 and 岩井洋},
  title = {TaN ゲート電極のRIE特性},
  journal = {第50回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100495775,
  author = {檜垣良太 and 赤間貞洋 and 筒井一生 and 佐々木雄一朗 and 水野文二 and 吉川住和 and 大見俊一郎 and 岩井洋},
  title = {室温ガスドーピング法におけるドーズ量の制御},
  journal = {第50回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100495776,
  author = {赤間貞洋 and 檜垣良太 and 筒井一生 and 佐々木雄一朗 and 水野文二 and 吉川住和 and 大見俊一郎 and 岩井洋“},
  title = {室温ガスドーピングの表面反応機構},
  journal = {第50回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100495777,
  author = {佐々木雄一朗 and 水野文二 and 赤間貞洋 and 檜垣良太 and 大見俊一郎 and 筒井一生 and 岡下勝己 and 前嶋聡 and 吉川住和 and 中山一郎 and 岩井洋},
  title = {プラズマドーピング法におけるH 等の深さ分布プロファイルの挙動とコンタミの検討},
  journal = {第50回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100495778,
  author = {白石貴義 and 吉田徹史 and 野平博司 and 柏木郁未 and 大島千鶴 and 大見俊一郎 and 岩井洋 and 城森慎司 and 中嶋薫 and 鈴木基史 and 木村健二 and 服部健雄},
  title = {LaO<sub>x</sub>極薄膜の組成・化学結合状態の深さ方向分析(II)},
  journal = {第64回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100495779,
  author = {小林洋一 and 上田功 and 大見俊一郎 and 筒井一生 and 岩井洋},
  title = {高誘電率希土類酸化物の積層構造に関する検討},
  journal = {第64回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100495780,
  author = {宮内邦裕 and 金容湜 and 大見俊一郎 and 筒井一生 and 岩井洋},
  title = {電子ビーム蒸着法により形成した高誘電率La<sub>2</sub>O<sub>3</sub>薄膜における漏れ電流特性},
  journal = {第64回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100495781,
  author = {吉田丈治 and ヘンドリアンシャーサウッディン and 大見俊一郎 and 筒井一生 and 岩井洋},
  title = {La<sub>2</sub>O<sub>3</sub>をゲート絶縁膜に用いたMISFET の低周波ノイズ},
  journal = {第64回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100495782,
  author = {黄仁安 and 栗山篤 and 大見俊一郎 and 筒井一生 and 岩井洋},
  title = {La<sub>2</sub>O<sub>3</sub>薄膜におけるポストメタルアニールに関する検討},
  journal = {第64回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100495783,
  author = {檜垣良太 and 筒井一生 and 佐々木雄一朗 and 水野文二 and 吉川住和 and 大見俊一郎 and 岩井洋},
  title = {プラズマ前処理を用いたガスドーピングにおける基板表面状態の影響},
  journal = {第64 回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100495784,
  author = {佐藤貴久 and 檜垣良太 and 筒井一生 and 佐々木雄一朗 and 田村秀貴 and 金成国 and 水野文二 and 大見俊一郎 and 岩井洋},
  title = {プラズマドーピング前後のHF 洗浄とドーズ量の変化},
  journal = {第64回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100495785,
  author = {T.Hattori and T.Yoshida and T.Shiraishi and K.Takahashi and H.Nohira and S.Joumori and K.Nakajima and M.Suzuki and K.Kimura and I.Kashiwagi and C.Ohshima and S.Ohmi and H.Iwai},
  title = {Composition, Chemical Structure and Electronic Band Structure of Rare Earth Oxide/Si(100) Interfacial Transition Layer},
  journal = {INFOS2003},
  year = 2003,
}

@article{CTT100495786,
  author = {R.Higaki and K.Tsutsui and Y.Sasaki and S.Akama and B.Mizuno and S.Ohmi and H.Iwai},
  title = {Effects of gas phase absorption into Si substrates on plasma doping process},
  journal = {ESSDERC 2003},
  year = 2003,
}

@article{CTT100495787,
  author = {Y.Kim and A.Kuriyama and I.Ueda and S. Ohmi and K.Tsutsui and H.Iwai},
  title = {Analysis of Electrical Characteristics of La<sub>2</sub>O<sub>3</sub> Thin Films Annealed in Vacuum and Others},
  journal = {ESSDERC 2003},
  year = 2003,
}

@article{CTT100495788,
  author = {I.Ueda and S.Ohmi and H.Iwai},
  title = {Electrical Characteristics of High-K Stack Gate Dielectric Thin Films with La<sub>2</sub>O<sub>3</sub> as Buffer Layer},
  journal = {204^th^ ECS Meeting},
  year = 2003,
}

@article{CTT100495822,
  author = {H.Sauddin and Y.Yoshihara and S.Ohmi and K.Tsutsui and H.Iwai},
  title = {Low-Frequency Noise Characteristics of MISFET's with La<sub>2</sub>O<sub>3</sub> Gate Dielectrics},
  journal = {204^th^ ECS Meeting},
  year = 2003,
}

@article{CTT100495823,
  author = {A.Kuriyama and S.Ohmi and K.Tsutusi and H.Iwai},
  title = {Effect of Post Metallization Annealing for La<sub>2</sub>O<sub>3</sub> Gate Thin Films on Electrical Characteristics},
  journal = {204^th^ ECS Meeting},
  year = 2003,
}

@article{CTT100494342,
  author = {山中剛 and 佐々木大輔 and 大見俊一郎 and 酒井徹志},
  title = {ECRスパッタ法により形成したAlO<sub>x</sub>N<sub>y</sub>薄膜の電気特性に対する熱処理の効果},
  journal = {第50回応用物理学関係連合講演会 講演予稿集},
  year = 2003,
}

@article{CTT100494344,
  author = {大見俊一郎},
  title = {チャネル多層化　新構造Multi-Layer Channel MOSFET},
  journal = {第50回応用物理学関係連合講演会　講演予稿集},
  year = 2003,
}

@article{CTT100494345,
  author = {山崎崇 and 高瀬恭英 and 大見俊一郎 and 酒井徹志},
  title = {SFC構造SiGe HBTの高周波特性の解析},
  journal = {第50回　応用物理学関係連合講演会　予稿集},
  year = 2003,
}

@article{CTT100494346,
  author = {高瀬恭英 and 山崎崇 and 大見俊一郎 and 酒井徹志},
  title = {SFC構造SiGe HBTにおけるp<sup>+</sup>poly-Siコンタクト領域作製プロセスの検討},
  journal = {第50回　応用物理学関係連合講演会　予稿集},
  year = 2003,
}

@article{CTT100494347,
  author = {山中剛 and 内川偉史 and 大見俊一郎 and 酒井徹志},
  title = {ECRスパッタ法により形成したAlO<sub>x</sub>N<sub>y</sub>薄膜の熱処理に関する検討},
  journal = {第64回応用物理学会学術講演会　講演予稿集},
  year = 2003,
}

@article{CTT100494348,
  author = {関川智英 and 袴田佳孝 and 山崎崇 and 大見俊一郎 and 酒井徹志},
  title = {Si/SiGe/Si構造におけるSiGe選択エッチングに関する検討},
  journal = {第64回応用物理学会学術講演会　講演予稿集},
  year = 2003,
}

@article{CTT100494349,
  author = {盛田伸也 and 大理洋征龍 and 山崎崇 and 大見俊一郎 and 酒井徹志},
  title = {新構造MOS/SOIの電気特性 -2Dシミュレーション-},
  journal = {第64回応用物理学会学術講演会　講演予稿集},
  year = 2003,
}

@article{CTT100494350,
  author = {世古裕亮 and 大見俊一郎 and 酒井徹志},
  title = {n<sup>+</sup>-poly-Siゲートを有する新構造Double-Gate MOSFETの特性解析},
  journal = {第64回応用物理学会学術講演会　講演予稿集},
  year = 2003,
}

@article{CTT100495760,
  author = {金容湜 and 柏木郁未 and 大見俊一郎 and 岩井洋},
  title = {希土類酸化物の結晶化におけるSi 基板面方位依存性},
  journal = {第63回応用物理学会学術講演会講演予稿集},
  year = 2003,
}

@article{CTT100495824,
  author = {Y.Kim and S.Ohmi and K.Tsusui and H.Iwai},
  title = {Electrical Characteristics of High-k La<sub>2</sub>O<sub>3</sub> Thin Film Deposited by E-Beam Evaporation Method},
  journal = {204^th^ ECS Meeting},
  year = 2003,
}

@article{CTT100495904,
  author = {大見俊一郎},
  title = {希土類酸化物薄膜のゲート絶縁膜応用},
  journal = {STRJ WG3-FEP会議（第52回）},
  year = 2003,
}

@article{CTT100495905,
  author = {大見俊一郎},
  title = {希土類酸化物薄膜のゲート絶縁膜応用},
  journal = {電気学会誘電体薄膜材料技術調査専門委員会　第８回委員会},
  year = 2003,
}

@article{CTT100488332,
  author = {C. Ohshima and J. Taguchi and I. Kashiwagi and H. Yamamoto and S. Ohmi and H. Iwai},
  title = {Effect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics},
  journal = {Appl. Surf. Sci.},
  year = 2003,
}

@article{CTT100488330,
  author = {S. Ohmi and C. Kobayashi and I. Kashiwagi and C. Ohshima and H. Ishiwara and H. Iwai},
  title = {Characterization of La<sub>2</sub>O<sub>3</sub> and Yb<sub>2</sub>O<sub>3</sub> Thin Films for High-k Gate Insulator Application},
  journal = {J. Electrochem. Soc.},
  year = 2003,
}

@article{CTT100488331,
  author = {H. Nohira and T. Shiraishi and T. Nakamura and K. Takahashi and M. Takeda and S. Ohmi and H. Iwai and T. Hattori},
  title = {Chemical and electronic structures of Lu<sub>2</sub>O<sub>3</sub>/Si interfacial transition layer},
  journal = {Appl. Surf. Sci.},
  year = 2003,
}

@article{CTT100488328,
  author = {J. Tonotani and T. Iwamoto and F. Sato and K. Hattori and S. Ohmi and H. Iwai},
  title = {Dry etching characteristics of TiN film using Ar/CHF<sub>3</sub>, Ar/Cl<sub>2</sub>, and Ar/BCl<sub>3</sub> gas chemicals in an inductively coupled plasma},
  journal = {J. Vac. Sci. Technol.},
  year = 2003,
}

@article{CTT100472386,
  author = {S.Ohmi and M.Takeda and H.Ishiwara and H. Iwai},
  title = {Characterization of Lu<sub>2</sub>O<sub>3</sub> High-k Thin Films on Si(100) Fabricated by E-beam Deposition Method},
  journal = {ECS International Semiconductor Technology Conference 2002},
  year = 2002,
}

@article{CTT100488333,
  author = {S. Ohmi and M. Takeda and H. Ishiwara and H. Iwai},
  title = {Characterization of Lu<sub>2</sub>O<sub>3</sub> Thin Films Fabricated by E-beam Deposition Method},
  journal = {Proc. 2nd Int. Conf. Semicond. Technol.},
  year = 2002,
}

@article{CTT100478947,
  author = {山中剛 and 佐々木大輔 and 大見俊一郎 and 酒井徹志},
  title = {ECRスパッタ法により形成したAlO<sub>x</sub>N<sub>y</sub>薄膜の電気特性},
  journal = {第63回応用物理学関係連合講演会　講演予稿集},
  year = 2002,
}

@article{CTT100478934,
  author = {T. Shiraishi and T. Nakamura and K. Takahashi and I. Kashiwagi and C. Ohshima and H. Nohira and S. Ohmi and H. Iwai and T. Hattori},
  title = {Depth Profiling of High-K Dielectric/Si Interfacial Transition Layer},
  journal = {Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials},
  year = 2002,
}

@article{CTT100478933,
  author = {T. Yamazaki and S. Ohmi and M. Sakuraba and J. Murota and T. Sakai},
  title = {Double-polysilicon self-aligned HBT with non-selective epitaxial SiGe:C base layer},
  journal = {Second International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices},
  year = 2002,
}

@article{CTT100477350,
  author = {H. Nohira and T. Shiraishi and T. Nakamura and K. Takahashi and M. Takeda and S. Ohmi and H. Iwai and T. Hattori},
  title = {Chemical and Electronic Structures of Lu<sub>2</sub>O<sub>3</sub>/Si Interfacial Transition Layer},
  journal = {Fourth International Symposium on Control of Semiconductor Interfaces},
  year = 2002,
}

@article{CTT100477349,
  author = {C. Ohshima and J. Taguchi and I. Kashiwagi and H. Yamamoto and S. Ohmi and H. Iwai},
  title = {Effect of Surface Treatment of Si substrates and Annealing Condition on High-k Rare Earth Oxide Gate Dielectrics },
  journal = {Fourth International Symposium on Control of Semiconductor Interfaces },
  year = 2002,
}

@article{CTT100477348,
  author = {Hiroyuki Yamamoto and Junichi Taguchi and Shun-ichiro Ohmi and Hiroshi Iwai},
  title = {The Effect of In-situ Vacuum Anneal for High-Dielectric Dy<sub>2</sub>O<sub>3</sub> Thin Films},
  journal = {WORKSHOP ON MICROELECTRONICS AND ELECTRON DEVICES (μE-ED 2002)},
  year = 2002,
}

@article{CTT100477345,
  author = {Ikumi Kashiwagi and Chizuru Ohshima and Yongshik Kim and Shun-ichiro Ohmi and Kazuo Tsutsui and Hiroshi Iwai},
  title = {Dependence of Gd<sub>2</sub>O<sub>3</sub> thin film properties on Si substrate orientation},
  journal = {WORKSHOP ON MICROELECTRONICS AND ELECTRON DEVICES (μE-ED 2002)},
  year = 2002,
}

@article{CTT100477343,
  author = {A. Kikuchi and S. Akama and S. Ohmi and K. Tsutsui and H. Iwai},
  title = {High-k Gate Insulator Endurance against Moisture Ambience and Wet Process},
  journal = {WORKSHOP ON MICROELECTRONICS AND ELECTRON DEVICES (μE-ED 2002)},
  year = 2002,
}

@article{CTT100477342,
  author = {H. Yamamoto and J. Taguchi and S. -I. Ohmi and H. Iwai},
  title = {Electrical Characterisitics Improvement of Dy<sub>2</sub>O<sub>3</sub> Thin Films by In-situ Vacuum Anneal},
  journal = {202^nd^ meeting of The Electrochemical Society},
  year = 2002,
}

@article{CTT100477341,
  author = {I. Kashiwagi and C. Ohshima and S.-I. Ohmi and H. Iwai},
  title = {Characteristics of High-k Gd<sub>2</sub>O<sub>3</sub> films deposited on different orientation of Si substrate},
  journal = {202nd meeting of The Electrochemical Society},
  year = 2002,
}

@article{CTT100477340,
  author = {A. Kikuchi and S. Akama and S. -I. Ohmi and H. Iwai},
  title = {Stability of High-k Thin Films for Wet Process},
  journal = {202nd meeting of The Electrochemical Society},
  year = 2002,
}

@article{CTT100477339,
  author = {J. Taguchi and H. Yamamoto and J. Tonotani and S. Ohmi and H. Ishiwara and H. Iwai},
  title = {Annealing Condition Dependence of Electrical Characteristics for Dy<sub>2</sub>O<sub>3</sub>/Si(100) Structures},
  journal = {32nd European Solid-State Device Research Conference},
  year = 2002,
}

@article{CTT100477335,
  author = {Chizuru Ohshima and Ikumi Kashiwagi and Shun-ichiro Ohmi and Hiroshi Iwai},
  title = {Electrical characteristics of Gd<sub>2</sub>O<sub>3</sub> thin film deposited on Si substrate},
  journal = {32nd European Solid-State Device Research Conference},
  year = 2002,
}

@article{CTT100477332,
  author = {Sadahiro Akama and Akira Kikuchi and Junichi Tonotani and Shun-ichiro Ohmi and Hiroshi Iwai},
  title = {Stability of High-k Thin Films in Moisture Ambience - The effect of Dissolution Gas from Acryl Apparatus - },
  journal = {32nd European Solid-State Device Research Conference},
  year = 2002,
}

@article{CTT100477330,
  author = {田口順一 and 山本浩之 and 大見俊一郎 and 岩井洋},
  title = {Dy<sub>2</sub>O<sub>3</sub>/Si(100)構造における電気特性のアニール条件依存性},
  journal = {STARCシンポジウム2002},
  year = 2002,
}

@article{CTT100477327,
  author = {赤間貞洋 and 菊池明 and 大見俊一郎 and 岩井洋},
  title = {高誘電率薄膜の耐湿性に関する検討　－アクリル容器からの放出ガスの影響－},
  journal = {STARCシンポジウム2002},
  year = 2002,
}

@article{CTT100477326,
  author = {大島千鶴 and 柏木郁未 and 大見俊一郎 and 岩井洋},
  title = {Si基板上に形成した高誘電率Gd<sub>2</sub>O<sub>3</sub>薄膜の電気特性},
  journal = {STARCシンポジウム2002},
  year = 2002,
}

@article{CTT100477320,
  author = {大見俊一郎},
  title = {最先端ＣＭＯＳデバイス・プロセス技術},
  journal = {第99回電子デバイス技術委員会},
  year = 2002,
}

@article{CTT100477319,
  author = {大見俊一郎 and 岩井洋},
  title = {微細シリコンデバイスに要求される各種高性能薄膜},
  journal = {第63回応用物理学会学術講演会 応用物理学会論文賞受賞記念講演},
  year = 2002,
}

@article{CTT100477316,
  author = {白石貴義 and 中村智裕 and 吉田徹史 and 高橋健介 and 柏木郁未 and 大島千鶴 and 武田光弘 and 野平博司 and 大見俊一郎 and 岩井洋 and 服部健雄},
  title = {GdO<sub>x</sub>/Si(100)およびLuO<sub>x</sub>/Si(100)界面遷移層の角度分解X線光電子分光解析},
  journal = {第63回応用物理学会学術講演会 講演予稿集},
  year = 2002,
}

@article{CTT100477313,
  author = {檜垣良太 and 赤間貞洋 and 大見俊一郎 and 筒井一生 and 佐々木雄一朗 and 水野文二 and 岩井洋},
  title = {プラズマドーピングとプラズマ前処理を用いたガスドーピング},
  journal = {第63回応用物理学会学術講演会 講演予稿集},
  year = 2002,
}

@article{CTT100477284,
  author = {上田功 and 田口順一 and 大見俊一郎 and 岩井洋},
  title = {希土類酸化物上へのTaNゲート電極の形成},
  journal = {第63回応用物理学会学術講演会 講演予稿集},
  year = 2002,
}

@article{CTT100477281,
  author = {吉原義昭 and 大島千鶴 and 大見俊一郎 and 岩井洋},
  title = {高誘電率希土類酸化物薄膜のSi基板表面処理の効果},
  journal = {第63回応用物理学会学術講演会 講演予稿集},
  year = 2002,
}

@article{CTT100477277,
  author = {金容湜 and 柏木郁未 and 大見俊一郎 and 岩井洋},
  title = {希土類酸化物の結晶化におけるSi基板面方位依存性},
  journal = {第63回応用物理学会学術講演会 講演予稿集},
  year = 2002,
}

@article{CTT100477269,
  author = {栗山篤 and 山本浩之 and 大見俊一郎 and 岩井洋},
  title = {希土類酸化物薄膜におけるin-situ真空アニールの効果に関する検討},
  journal = {第63回応用物理学会学術講演会 講演予稿集},
  year = 2002,
}

@article{CTT100477259,
  author = {山崎崇 and 大見俊一郎 and 室田淳一 and 酒井徹志},
  title = {Pイオン注入による非晶質Si薄膜の増速エッチングとその応用},
  journal = {第49回応用物理学会関係連合講演会 講演予稿集},
  year = 2002,
}

@article{CTT100477257,
  author = {奥田慶文 and 大見俊一郎 and 酒井徹志},
  title = {Sub-20nm新構造Double-Gate MOSFET},
  journal = {第49回応用物理学会関係連合講演会 講演予稿集},
  year = 2002,
}

@article{CTT100477256,
  author = {安西邦夫 and 佐々木大輔 and 大見俊一郎 and 酒井徹志},
  title = {ECRスパッタ法により形成したAlN薄膜へのAr/O<sub>2</sub>プラズマ照射の効果},
  journal = {第49回応用物理学会関係連合講演会 講演予稿集},
  year = 2002,
}

@article{CTT100477255,
  author = {戸野谷純一 and 赤間貞洋 and 菊池明 and 大見俊一郎 and 岩井洋},
  title = {High-kゲート絶縁膜のRIE特性},
  journal = {第49回応用物理学会関係連合講演会 講演予稿集},
  year = 2002,
}

@article{CTT100477254,
  author = {中村智裕 and 白石貴義 and 高橋健介 and 柏木郁未 and 大島千鶴 and 武田光弘 and 野平博司 and 大見俊一郎 and 岩井洋 and 服部健雄},
  title = {GdO<sub>x</sub>およびLuO<sub>x</sub>の極薄膜確度分解X線光電子分光分析},
  journal = {第49回応用物理学会関係連合講演会 講演予稿集},
  year = 2002,
}

@article{CTT100477253,
  author = {武田光弘 and 大見俊一郎 and 石原宏 and 岩井洋},
  title = {Lu<sub>2</sub>O<sub>3</sub>薄膜形成における基板表面処理の効果},
  journal = {第49回応用物理学会関係連合講演会 講演予稿集},
  year = 2002,
}

@article{CTT100477252,
  author = {菊地明 and 赤間貞洋 and 戸野谷純一 and 大見俊一郎 and 石原宏 and 岩井洋},
  title = {希土類酸化物薄膜のウェットプロセス耐性},
  journal = {第49回応用物理学会関係連合講演会 講演予稿集},
  year = 2002,
}

@article{CTT100477251,
  author = {大島千鶴 and 柏木郁未 and 大見俊一郎 and 石原宏 and 岩井洋},
  title = {Si基板上に形成した高誘電率 Gd<sub>2</sub>O<sub>3</sub>薄膜の電気特性},
  journal = {第49回応用物理学会関係連合講演会 講演予稿集},
  year = 2002,
}

@article{CTT100477250,
  author = {山本浩之 and 田口順一 and 大見俊一郎 and 石原宏 and 岩井洋},
  title = {In-situ アニールによるDy<sub>2</sub>O<sub>3</sub>薄膜の電気特性向上に関する検討},
  journal = {第49回応用物理学会関係連合講演会 講演予稿集},
  year = 2002,
}

@article{CTT100477249,
  author = {田口順一 and 山本浩之 and 戸野谷純一 and 大見俊一郎 and 石原宏 and 岩井洋},
  title = {Dy<sub>2</sub>O<sub>3</sub>/Si(100)構造の電気特性のアニール時間依存性},
  journal = {第49回応用物理学会関係連合講演会 講演予稿集},
  year = 2002,
}

@article{CTT100477248,
  author = {柏木郁未 and 大島千鶴 and 大見俊一郎 and 石原宏 and 岩井洋},
  title = {希土類酸化物薄膜の電気特性におけるSi基板面方位依存性},
  journal = {第49回応用物理学会関係連合講演会 講演予稿集},
  year = 2002,
}

@article{CTT100477247,
  author = {赤間貞洋 and 菊池明 and 戸野谷純一 and 大見俊一郎 and 石原宏 and 岩井洋},
  title = {高誘電率希土類酸化物薄膜の耐湿性に関する検討　－アクリル容器からの放出ガスの影響－},
  journal = {第49回応用物理学会関係連合講演会 講演予稿集},
  year = 2002,
}

@article{CTT100477246,
  author = {佐藤航一郎 and 大見俊一郎 and 石原宏 and 岩井洋},
  title = {Si基板上への高誘電率Pr<sub>2</sub>O<sub>3</sub>薄膜の形成条件に関する検討},
  journal = {第49回応用物理学関係連合講演会　講演予稿集},
  year = 2002,
}

@article{CTT100472387,
  author = {S.Ohmi and I.Kashiwagi and C.Ohshima and J.Taguchi and H.Yamamoto and J.Tonotani and H.Ishiwara and H.Iwai},
  title = {Electrical Characteristics of Rare Earth Gate Oxides Improved by Chemical Oxide and Long Low Temperature Annealing},
  journal = {Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials},
  year = 2002,
}

@article{CTT100472242,
  author = {S.Ohmi and S.Akama and A.Kikuchi and I.Kashiwagi and C.Ohshima and J.Taguchi and H.Yamamoto and K.Sato and M.Takeda and H.Ishiwara and H.Iwai},
  title = {Rare Earth Metal Oxides for High-k Gate Insulator},
  journal = {Electrochemical Society Proceedings Volume 2002-2},
  year = 2002,
}

@article{CTT100456345,
  author = {徳光永輔 and 大見俊一郎 and 岩井洋},
  title = {High-kゲート絶縁膜用酸化物材料の研究},
  journal = {電気学会電子材料研究会},
  year = 2001,
}

@article{CTT100456344,
  author = {菊地明 and 赤間貞洋 and 佐藤航一郎 and 武田光弘 and 大島享介 and 大見俊一郎 and 石原宏 and 岩井洋},
  title = {高誘電率希土類酸化物薄膜の耐湿性に関する検討},
  journal = {STARCシンポジウム2001},
  year = 2001,
}

@article{CTT100456343,
  author = {山本浩之 and 田口順一 and 佐藤航一郎 and 武田光弘 and 大島享介 and 大見俊一郎 and 石原宏 and 岩井洋},
  title = {高誘電率希土類酸化物のSi基板上への形成},
  journal = {STARCシンポジウム2001},
  year = 2001,
}

@article{CTT100456342,
  author = {柏木郁未 and 大島千鶴 and 佐藤航一郎 and 武田光弘 and 大島享介 and 大見俊一郎 and 石原宏 and 岩井洋},
  title = {High-kゲート絶縁膜用希土類酸化物薄膜の電気特性},
  journal = {STARCシンポジウム2001},
  year = 2001,
}

@article{CTT100456341,
  author = {佐藤航一郎 and 大見俊一郎 and 石原宏 and 岩井洋},
  title = {高誘電率Pr<sub>2</sub>O<sub>3</sub>薄膜の形成条件に関する検討},
  journal = {第62回応用物理学会学術講演会},
  year = 2001,
}

@article{CTT100456340,
  author = {田口順一 and 山本浩之 and 佐藤航一郎 and 武田光弘 and 大島享介 and 大見俊一郎 and 石原宏 and 岩井洋},
  title = {高誘電率希土類酸化物のSi基板上への形成},
  journal = {第62回応用物理学会学術講演会},
  year = 2001,
}

@article{CTT100456339,
  author = {赤間貞洋 and 菊地明 and 佐藤航一郎 and 武田光弘 and 大島享介 and 大見俊一郎 and 石原宏 and 岩井洋},
  title = {高誘電率希土類酸化物薄膜の耐湿性に関する検討},
  journal = {第62回応用物理学会学術講演会},
  year = 2001,
}

@article{CTT100456337,
  author = {武田光弘 and 佐藤航一郎 and 大見俊一郎 and 石原宏 and 岩井洋},
  title = {電子ビーム蒸着法による高誘電率Lu<sub>2</sub>O<sub>3</sub>薄膜の形成},
  journal = {第62回応用物理学会学術講演会},
  year = 2001,
}

@article{CTT100456336,
  author = {大島千鶴 and 柏木郁未 and 佐藤航一郎 and 武田光弘 and 大島享介 and 大見俊一郎 and 石原宏 and 岩井洋},
  title = {High-kゲート絶縁膜用希土類酸化物薄膜の電気特性},
  journal = {第62回応用物理学会学術講演会},
  year = 2001,
}

@article{CTT100456335,
  author = {大島享介 and 大見俊一郎 and 朴炳垠 and 石原宏 and 岩 井 洋},
  title = {電子ビーム蒸着法によるZrO<sub>2</sub>薄膜形成時における酸素導入の効果},
  journal = {第62回応用物理学会学術講演会},
  year = 2001,
}

@article{CTT100456334,
  author = {岩井洋 and 大見俊一郎},
  title = {高誘電体ゲート絶縁膜技術},
  journal = {半導体・集積回路技術第６０回シンポジウム},
  year = 2001,
}

@article{CTT100456333,
  author = {岩井 洋 and 大見 俊一郎},
  title = {次世代ゲート絶縁膜用高誘電率薄膜に関する研究},
  journal = {日本学術振興会 未来開拓学術研究推進事業 研究プロジェクト、｢次世代ULSI用薄膜材料の開発とナノスケールプロセスインテグレーション｣第８回研究会},
  year = 2001,
}

@article{CTT100456332,
  author = {芦田光行 and 大見俊一郎 and 大黒達也 and 岩井洋},
  title = {微細CMOSにおける1/f雑音のゲート長依存性},
  journal = {第４８回応用物理学関係連合講演会},
  year = 2001,
}

@article{CTT100456330,
  author = {佐藤航一郎 and 大見俊一郎 and 徳光永輔 and 石原宏 and 岩井洋},
  title = {電子ビーム蒸着法によりSi基板上に堆積したPr酸化物の特性},
  journal = {第４８回応用物理学関係連合講演会},
  year = 2001,
}

@article{CTT100456329,
  author = {大島享介 and 大見俊一郎 and 徳光永輔 and 岩井洋 and 石原宏},
  title = {超高真空電子ビーム蒸着法により堆積した高誘電率材料ZrO<sub>2</sub>膜の特性},
  journal = {第４８回応用物理学関係連合講演会},
  year = 2001,
}

@article{CTT100456328,
  author = {藤村亮介 and 武田光弘 and 大見俊一郎 and 石原宏 and 岩井洋},
  title = {シミュレーションによる極微細高誘電率ゲートFETの電気特性解析},
  journal = {第４８回応用物理学関係連合講演会},
  year = 2001,
}

@article{CTT100456286,
  author = {大見俊一郎 and R. S. Johnson and J. G. Hong and G. Lucovsky and 岩井 洋},
  title = {RPECVD法によるAl<sub>2</sub>O<sub>3</sub>のSi基板上への形成},
  journal = {第４８回応用物理学関係連合講演会},
  year = 2001,
}

@article{CTT100456285,
  author = {岩井洋 and 大見俊一郎},
  title = {high-kゲート絶縁膜技術の最新研究動向と将来展望},
  journal = {Semiconductor FPD World},
  year = 2001,
}

@article{CTT100456284,
  author = {大見俊一郎 and 岩井洋},
  title = {アメリカを中心とするゲート絶縁膜用High-k材料の最新技術動向},
  journal = {Material Stage},
  year = 2001,
}

@article{CTT100456283,
  author = {S.Ohmi and S. Akama and A. Kikuchi and I. Kashiwagi and C. Ohshima and J. Taguchi and H. Yamamoto and C. Kobayashi and K. Sato and M. Takeda and K. Oshima and H. Ishiwara and H.Iwai},
  title = {Rare Earth Metal Oxide Gate Thin Films Prepared by E-beam Dposition},
  journal = {International Workshop on Gate Insulator 2001},
  year = 2001,
}

@article{CTT100456282,
  author = {S.Ohmi and C. Kobayashi and E. Tokumitsu and H. Ishiwara and H.Iwai},
  title = {Low Leakage La┣D22┫D2O┣D23┫D2 Gate Insulator Film with EOTs of 0.8-1.2 nm},
  journal = {2001 International Conference on Solid State Devices and Conferences},
  year = 2001,
}

@article{CTT100456281,
  author = {S.Ohmi and C. Kobayashi and K. Aizawa and S. Yamamoto and E. Tokumitsu and H. Ishiwara and H.Iwai},
  title = {High Quality La┣D22┫D2O┣D23┫D2 Films for High-k Gate Insulator},
  journal = {31st European Solid-State Device Research Conference},
  year = 2001,
}

@article{CTT100456280,
  author = {H. Iwai and S. Ohmi},
  title = {Gate dielectrics for deep sub-0.1 μm CMOS},
  journal = {FTM 2001, Scientific Program, 2001 Advanced Research Workshop, Future Trends in Microelectronics: The Nano Millennium},
  year = 2001,
}

@article{CTT100456279,
  author = {R.Fujimura and M.Takeda and K.Sato and S.Ohmi and H.Ishiwara and H.Iwai},
  title = {Enhanced short-channel effects of sub-50nm gate length MOSFETs with high-k gate insulator films},
  journal = {The 199th Meeting of The Electrochemical Society ULSI Process Integration II},
  year = 2001,
}

@article{CTT100456278,
  author = {H. Iwai and S. Ohmi},
  title = {ULSI Process Integration for 2005 and beyond},
  journal = {The 199th Meeting of The Electrochemical Society, ULSI Process Integration II},
  year = 2001,
}

@article{CTT100456277,
  author = {H. Iwai and T. Ohguro and S. Ohmi},
  title = {NiSi Salicide Technology for Scaled CMOS},
  journal = {Abstract of European Workshop Materials for Advanced Metallization (MAM2001)},
  year = 2001,
}

@article{CTT100456331,
  author = {小林千尋 and 大見俊一郎 and 徳光永輔 and 石原宏 and 岩井洋},
  title = {電子ビーム蒸着法によるLa<sub>2</sub>O<sub>3</sub>薄膜のSi基板上への形成},
  journal = {第４８回応用物理学関係連合講演会},
  year = 2001,
}

@article{CTT100448963,
  author = {大見俊一郎},
  title = {アメリカを中心とするゲート絶縁膜用High-k材料の最新技術動向},
  journal = {Material Stage},
  year = 2001,
}

@article{CTT100600181,
  author = {岩井洋 and 大見俊一郎},
  title = {微細シリコンデバイスに要求される各種高性能薄膜},
  journal = {応用物理},
  year = 2000,
}

@article{CTT100448962,
  author = {大見俊一郎},
  title = {マイクロ波Si系素子・回路の技術動向および今後の展望について},
  journal = {電子情報通信学会論文誌},
  year = 2000,
}

@article{CTT100448961,
  author = {大見俊一郎},
  title = {21世紀の半導体デバイスとリソグラフィ技術},
  journal = {電気学会誌},
  year = 2000,
}

@article{CTT100447238,
  author = {SHUN-ICHIRO OHMI},
  title = {Ultra-thin gate SiO┣D22┫D2 technology},
  journal = {THE PHYSICS AND CHEMISTRY OF SiO┣D22┫D2 AND THE Si-SiO┣D22┫D2 INTERFACE-4},
  year = 2000,
}

@article{CTT100443575,
  author = {R. T. Tung and S. Ohmi},
  title = {Epitaxial silicide interfaces in microelectronics},
  journal = {Thin Solid Films},
  year = 2000,
}

@article{CTT100447998,
  author = {大見俊一郎 and 岩井　洋},
  title = {High-kゲート絶縁膜の動向},
  journal = {Challenge of Intelligence for Future Break Through},
  year = 2000,
}

@article{CTT100448960,
  author = {大見俊一郎},
  title = {微細シリコンデバイスに要求される各種高性能薄膜},
  journal = {応用物理学会誌},
  year = 2000,
}

@article{CTT100427508,
  author = {SHUN-ICHIRO OHMI},
  title = {Silicide Formation in Co-Deposited TiSi┣D2X┫D2 Layers: The Effect of Deposition Temperature and Mo},
  journal = {J. Electronic Materials},
  year = 1999,
}

@article{CTT100443574,
  author = {S. Ohmi and R. T. Tung},
  title = {OXIDE MEDIATED EPITAXIAL GROWTH OF CoSi┣D22┫D2 IN A SINGLE DEPOSITION STEP},
  journal = {Mat. Res. Soc. Symp. Proc.},
  year = 1999,
}

@article{CTT100443573,
  author = {S. Ohmi and R. T. Tung},
  title = {Facilitated C54-TiSi┣D22┫D2 Formation with Elevated Deposition Temperature: A Study of Co-deposited Layers},
  journal = {Mat. Res. Soc. Symp. Proc.},
  year = 1999,
}

@article{CTT100427509,
  author = {SHUN-ICHIRO OHMI},
  title = {Effect of ultrathin Mo and MoSi┣D2X┫D2 layer on Ti silicide reaction},
  journal = {J. Appl. Phys.},
  year = 1999,
}

@article{CTT100443577,
  author = {SHUN-ICHIRO OHMI},
  title = {Improved Thermal Stability of Ultra-thin CoSi┣D22┫D2 layers by Oxygen Annealing},
  journal = {Mat. Res. Soc. Symp. Proc.},
  year = 1998,
}

@article{CTT100443576,
  author = {SHUN-ICHIRO OHMI},
  title = {Oxide Mediated Epitaxy on Planar and Non-planar Silicon},
  journal = {Mat. Res. Soc. Symp. Proc.},
  year = 1998,
}

@article{CTT100427506,
  author = {Tomoki Hayashi and Makoto Yoshihara and Syun-ichiro Ohmi and Eisuke Tokuitsu and Hiroshi Ishiwara},
  title = {Electrical properties of ferroelectric BaMgF┣D24┫D2 films grown on GaAs substrates using AlGaAs buffer layer},
  journal = {Applied Surface Science},
  year = 1997,
}

@article{CTT100417496,
  author = {SHUN-ICHIRO OHMI},
  title = {Electrical Properties of Ferroelectric Gate HEMT Structures},
  journal = {Japanese Journal of Applied Physics},
  year = 1996,
}

@article{CTT100494305,
  author = {S. Ohmi and T. Okamoto and M. Tagami and E. Tokumitsu and H. Ishiwara},
  title = {Device Characterization of High-Electron Mobility Transistors with Ferroelectric-Gate Structures},
  journal = {IEEE GaAs IC Symposium Tech. Dig.},
  year = 1996,
}

@article{CTT100427507,
  author = {Hiroshi Ishiwara and Shun-ichiro Ohmi and Eisuke Tokumithu},
  title = {Ferroelectric Gate High  Electron Mobility Transistors for Neural Computation},
  journal = {Proceedings of the International Conference on Quantum Devices and Circuits},
  year = 1996,
}

@article{CTT100417340,
  author = {SHUN-ICHIRO OHMI},
  title = {Electrical Properties of Ferroelectric Gate HEMT structures},
  journal = {1995 International Conference on Solid State Devices and Materials},
  year = 1995,
}

@article{CTT100417497,
  author = {SHUN-ICHIRO OHMI},
  title = {Contactless Measurement of Electron Mobility in Ferroelectric Gate High-Electron-Mobility Transistor Structures},
  journal = {Japanese Journal of Applied Physics},
  year = 1995,
}

@article{CTT100417495,
  author = {SHUN-ICHIRO OHMI},
  title = {Characterization of Ferroelectric BaMgF┣D24┫D2 Films Grown on AlGaAs/GaAs (100) High-Electron-Mobility Transistor Structures.},
  journal = {Journal of Crystal Growth},
  year = 1995,
}

@article{CTT100417339,
  author = {SHUN-ICHIRO OHMI},
  title = {Electrical Properties of Ferroelectric BaMgF┣D24┫D2 Films Grown on Modulation-Doped AlGaAs/GaAs (100) structures},
  journal = {1995 Electronic Materials Conference},
  year = 1995,
}

@article{CTT100417451,
  author = {SHUN-ICHIRO OHMI and EISUKE TOKUMITSU and HIROSHI ISHIWARA},
  title = {Characterization of ferroelectric BaMgF4 films grown on AlGaAs/GaAs (100) high-electron-mobility transistor structures},
  journal = {Journal of Crystal Growth},
  year = 1995,
}

@article{CTT100448958,
  author = {大見俊一郎},
  title = {ヘテロ成長におけるローテーショナル・ツイン生成機構の解明とその制御},
  journal = {日本結晶成長学会誌},
  year = 1994,
}

@article{CTT100417336,
  author = {SHUN-ICHIRO OHMI},
  title = {Sm┣D12+┫D1 Photoluminescence and X-ray Scattering studies of A-and B-Type Epitaxial CaF┣D22┫D2 Layers on Si (111)},
  journal = {Japanese Journal of Applied Physics},
  year = 1994,
}

@article{CTT100417494,
  author = {SHUN-ICHIRO OHMI},
  title = {Study of Epitaxial Growth of Rotational Twin-Free CaF┣D22┫D2 Films on Si(111)},
  journal = {Japanese Journal of Applied Physics},
  year = 1994,
}

@article{CTT100417338,
  author = {SHUN-ICHIRO OHMI},
  title = {Characterization of Ferroelectric BaMgF┣D24┫D2 Films on AlGaAs/GaAs (100) HEMT structures.},
  journal = {8th International Conference on Molecular Beam Epitaxy},
  year = 1994,
}

@article{CTT100417337,
  author = {筒井一生 and 大見俊一郎 and 川崎宏治 and 古川静二郎 and N.S.ソコロフ},
  title = {Generation Mechanism and Control of Rotational Twin on Heteroepitaxial Growth},
  journal = {Japanese Jourual of Crystal Growth},
  year = 1994,
}

@inproceedings{CTT100852900,
  author = {J. Molina and T. Mimura and Y. Nakamura and T. Shimizu and H. Funakubo and I. Fujiwara and T. Hoshii and S. Ohmi and A. Hori and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Interface engineering of BEOL compatible ferroelectric Y:HfO2 device for enhanced endurance},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100813980,
  author = {Joel Molina-Reyes and Takuya Hoshii and Shun-Ichiro Ohmi and Hiroshi Funakubo and Atsushi Hori and Ichiro Fujiwara and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {Endurance Improvement in Ferroelectric Y-doped HfO2 Thin Films on NiSi2 with Low-Thermal Budget Processing},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100821301,
  author = {Joel Molina-Reyes and Haruki Iwatsuka and Takuya Hoshii and Shun-Ichiro Ohmi and Hiroshi Funakubo and Atsushi Hori and Ichiro Fujiwara and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {NiSi2 as a Promotor of Ferroelectricity in Si-doped HfO2 Thin Films after Low-Thermal Budget Processing},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813974,
  author = {J. Molina and H. Iwatsuka and T. Hoshii and S. Ohmi and H. Funakubo and A. Hori and I. Fujiwara and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Ferroelectric Properties of Si doped HfO2 Thin Films with NiSi2 as Bottom Electrode},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100608342,
  author = {Han Hui-Seong and Takahiro Sano and Young uk Song and Shun-ichiro Ohmi},
  title = {Electrical Properties of Hf/HfSiON/p-Si(100) Structure MIS capacitor by Using ECR-Sputtering},
  booktitle = {春季第５７回応用物理学関係連合講演会予稿集},
  year = 2010,
}

@inproceedings{CTT100608344,
  author = {Liao Min and Young uk Song and Jumpei Ishikawa and Shun-ichiro Ohmi},
  title = {Dielectric layer dependence of electrical and physical properties of pentacene films},
  booktitle = {春季第５７回応用物理学関係連合講演会予稿集},
  year = 2010,
}

@inproceedings{CTT100608345,
  author = {Young uk Song and Shun-ichiro Ohmi and Hiroshi Ishiwara},
  title = {Investigation of n-type properties of pentacene based on MOS diodes utilizing ultra thin metal interlayer},
  booktitle = {春季第５７回応用物理学関係連合講演会予稿集},
  year = 2010,
}

@inproceedings{CTT100608341,
  author = {佐野貴洋 and 大見俊一郎},
  title = {ECRスパッタ法により形成したHfN/HfSiON/Si(100)ゲートスタック構造の評価},
  booktitle = {春季第５７回応用物理学関係連合講演会予稿集},
  year = 2010,
}

@inproceedings{CTT100608340,
  author = {高峻 and 石川純平 and 大見俊一郎},
  title = {２段階シリサイド化によるHf混晶化PtSiの極薄膜化にかんする検討},
  booktitle = {春季第５７回応用物理学関係連合講演会予稿集},
  year = 2010,
}

@inproceedings{CTT100608339,
  author = {石川純平 and 高峻 and 大見俊一郎},
  title = {ウェットエッチングによるYb混晶化PtSiのパターニングに関する検討},
  booktitle = {春季第５７回応用物理学関係連合講演会予稿集},
  year = 2010,
}

@inproceedings{CTT100608343,
  author = {木村雄一郎 and 高峻 and 石川純平 and 大見俊一郎},
  title = {RFマグネトロンスパッタ法によるPtSiゲート電極の形成},
  booktitle = {春季第５７回応用物理学関係連合講演会予稿集},
  year = 2010,
}

@inproceedings{CTT100608338,
  author = {石川純平 and 高峻 and 大見俊一郎},
  title = {ポストアニールによるYb混晶化PtSiの低抵抗率化に関する検討},
  booktitle = {秋季第７０回応用物理学会学術講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100608337,
  author = {佐野貴洋 and 大見俊一郎},
  title = {ECRスパッタ法による３次元構造上へのHfN/HfONゲートスタック構造の形成},
  booktitle = {秋季第７０回応用物理学会学術講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100608197,
  author = {高峻 and 石川純平 and 大見俊一郎},
  title = {Hf混晶化PtSiの耐熱性に関する検討},
  booktitle = {春季第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100608195,
  author = {佐野貴洋 and 大見俊一郎},
  title = {3次元構造上に形成したHfON薄膜の側壁部膜質の評価},
  booktitle = {春季第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100608199,
  author = {Joo-Won Yoon and Shun-ichiro Ohmi and Hiroshi Ishiwara},
  title = {Retention Characteristics of poly(vinylidenefluoride-trifluoroethylene)MFIS diodes},
  booktitle = {春季第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100608198,
  author = {Young uk Song and Md.Akhtaruzzaman and Shun-ichiro Ohmi and Hiroshi Ishiwara},
  title = {Characteristics of pentacene based MOS diodes with thin gate dielectric},
  booktitle = {春季第56回応用物理学関係連合講演会},
  year = 2009,
}

@inproceedings{CTT100608196,
  author = {石川純平 and 高峻 and 大見俊一郎},
  title = {Yb混晶化PtSiの結晶性に関する検討},
  booktitle = {春季第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100608332,
  author = {高峻、石川純平、大見俊一郎},
  title = {２段階シリサイド化によるHf混晶化PtSiの耐熱性向上に関する検討},
  booktitle = {電子情報通信学会技術研究報告},
  year = 2009,
}

@inproceedings{CTT100608336,
  author = {Young uk Song,Shun-ichiro Ohmi,Hiroshi Ishiwara},
  title = {Investigation of characteristics of pentacene-based MOSFETs structures},
  booktitle = {電子情報通信学会技術研究報告},
  year = 2009,
}

@inproceedings{CTT100608334,
  author = {佐野貴洋、大西峻人、大見俊一郎},
  title = {ECRスパッタ法によるHfN/HfON積層構造の形成},
  booktitle = {電子情報通信学会技術研究報告},
  year = 2009,
}

@inproceedings{CTT100608193,
  author = {須田雄一郎、モハメド アヌア、高峻、大見俊一郎},
  title = {RFマグネトロンスパッタ法によるPtSiゲート電極の形成},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100608194,
  author = {高峻 and 石川純平 and 大見俊一郎},
  title = {Hf結晶化PtSiの結晶性に関する検討},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100608192,
  author = {佐野貴洋、大見俊一郎},
  title = {ECRスパッタ法による３次元構造上へのHfOxNy薄膜の形成},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100553773,
  author = {Uzzaman Md. Akhtar and S. Ohmi and J. Nishida and Y. Yamashita and H. Ishiwara},
  title = {Improvement of Pentacene Based MOS Diodes Characteristics by Surface Treatment of SiO2},
  booktitle = {第55回応用物理学関係連合講演会講演予稿集},
  year = 2008,
}

@inproceedings{CTT100567324,
  author = {尹珠元 and 大見俊一郎 and 石原宏},
  title = {Ferroelectrics Characteristics of poly (vinylidene fluoride-trifluoroethylene) MFIS diodes},
  booktitle = {2008年（平成20年）春季第55回応用物理学関係連合講演会講演予稿集},
  year = 2008,
}

@inproceedings{CTT100553770,
  author = {高峻 and 仲野雄介 and 大見俊一郎},
  title = {Hf混晶化PtSiのシリサイド化条件に関する検討},
  booktitle = {第55回応用物理学関係連合講演会講演予稿集},
  year = 2008,
}

@inproceedings{CTT100553769,
  author = {佐野貴洋 and 仲野雄介 and 大見俊一郎},
  title = {ECRスパッタ法による3次元ゲート構造上へのHfO2薄膜の形成},
  booktitle = {第55回応用物理学関係連合講演会講演予稿集},
  year = 2008,
}

@inproceedings{CTT100553768,
  author = {須田雄一郎 and 野武幸輝 and 高峻 and 佐野貴洋 and 大見俊一郎},
  title = {RFスパッタ法による3次元構造上へのSiO2薄膜の形成},
  booktitle = {第55回応用物理学関係連合講演会講演予稿集},
  year = 2008,
}

@inproceedings{CTT100553767,
  author = {尹珠元 and 大見俊一郎 and 石原宏},
  title = {Ferroelectrics Characteristics of poly (vinylidene fluoride - trifluoroethylene) MFIS diodes},
  booktitle = {第55回応用物理学関係連合講演会講演予稿集},
  year = 2008,
}

@inproceedings{CTT100553764,
  author = {尹珠元 and 大見俊一郎 and 石原宏},
  title = {Characteristics of metal-ferroelectric-insulartor-semiconductor structures based on poly(vinylidene fluoride-trifluoroethylene)},
  booktitle = {電子情報通信学会技術研究報告},
  year = 2008,
}

@inproceedings{CTT100608200,
  author = {高峻、石川純平、大見俊一郎},
  title = {Hf結晶化PtSiの仕事関数変数機構の検討},
  booktitle = {電子情報通信学会技術研究報告},
  year = 2008,
}

@inproceedings{CTT100611634,
  author = {高峻 and 石川純平 and 大見俊一郎},
  title = {Hf結晶化PtSiの仕事関数変調機構の検討},
  booktitle = {電子情報通信学会技術研究報告},
  year = 2008,
}

@inproceedings{CTT100553761,
  author = {大見俊一郎},
  title = {HfNのECRプラズマ酸化により形成したHfOxNyのPDAプロセスの検討},
  booktitle = {International Symposium on Semiconductor Manufacturing 2007 日本特別報告会 Conf. Proc.},
  year = 2007,
}

@inproceedings{CTT100553759,
  author = {仲野雄介 and 佐藤雅樹 and 大見俊一郎},
  title = {ECRプラズマプロセスによるHfO2系絶縁膜の極薄膜化の検討},
  booktitle = {電子情報通信学会技術研究報告},
  year = 2007,
}

@inproceedings{CTT100553753,
  author = {大見俊一郎 and 高峻 and 仲野雄介},
  title = {Hfとの混晶化によるPtSiの仕事関数変調},
  booktitle = {電子情報通信学会技術研究報告},
  year = 2007,
}

@inproceedings{CTT100553756,
  author = {野武幸輝 and 須田雄一郎 and 大見俊一郎},
  title = {SBSIプロセスによるSOI/BOX層の均一形成に関する検討},
  booktitle = {電子情報通信学会技術研究報告},
  year = 2007,
}

@inproceedings{CTT100553741,
  author = {S. Ohmi and Y. Nakano},
  title = {Investigation of PDA Process to Improve Electrical Characteristics of HfOxNy High-k Dielectric Formed by ECR Plasma Oxidation of HfN},
  booktitle = {2007 International Symposium on Semiconductor Manufacturing, Conf. Proc.},
  year = 2007,
}

@inproceedings{CTT100553745,
  author = {野武幸輝 and 金本啓 and 加藤樹理 and 大見俊一郎},
  title = {SBSIプロセスによる極薄SOI/BOX層の均一形成に関する検討},
  booktitle = {第68回応用物理学会学術講演会 講演予稿集},
  year = 2007,
}

@inproceedings{CTT100553743,
  author = {仲野雄介 and 大見俊一郎},
  title = {高誘電率HfOxNy絶縁膜のPDAプロセスの検討},
  booktitle = {第68回応用物理学会学術講演会 講演予稿集},
  year = 2007,
}

@inproceedings{CTT100553736,
  author = {J. Kato and H. Oka and K. Kanemoto and H. Hisamatsu and Y. Matsuzawa and Y. Kitano and T. Hara and M. Hoshina and S. Ohmi},
  title = {Mechanism of Selective Etching of SiGe Layers in SiGe/Si Systems},
  booktitle = {The 211th Meeting of The Electrochemical Society, Meeting Abstract},
  year = 2007,
}

@inproceedings{CTT100553738,
  author = {J. Kato and H. Oka and K. Kanemoto and H. Hisamatsu and Y. Matsuzawa and Y. Kitano and T. Hara and M. Hoshina and S. Ohmi},
  title = {Fabrication of SOI MOSFET by “Separation by Bonding Silicon Islands (SBSI) Method},
  booktitle = {The 211th Meeting of The Electrochemical Society, Meeting Abstract},
  year = 2007,
}

@inproceedings{CTT100530143,
  author = {大見俊一郎 and 澤熊悠 and 大熊直樹},
  title = {PtSiの混晶化による仕事関数変調},
  booktitle = {電子情報通信学会技術研究報告},
  year = 2006,
}

@inproceedings{CTT100530149,
  author = {大見俊一郎},
  title = {ECRプラズマプロセスによる高誘電率ゲート絶縁膜の形成},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100530405,
  author = {佐藤雅樹 and 仲野雄介 and 大見俊一郎},
  title = {Pt/HfO<sub>x</sub>N<sub>y</sub>/Si(100)ゲート積層構造の形成とPMA条件の検討},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100530141,
  author = {野武幸輝 and 矢橋健一 and 大見俊一郎},
  title = {SBSIプロセスにおけるSi島の均一形成に関する検討},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100530142,
  author = {矢橋健一 and 野武幸輝 and 大見俊一郎},
  title = {SBSI技術による極薄SOI/BOX層の形成},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100530406,
  author = {仲野雄介 and 佐藤雅樹 and 黒瀬朋紀 and 大見俊一郎},
  title = {HfNのECRプラズマ酸化により形成したHfO<sub>x</sub>N<sub>y</sub>のゲート絶縁膜応用},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100530146,
  author = {Shun-ichiro Ohmi and Tetsushi Sakai},
  title = {A Proposal of Twin-Channel(TC)-MOSFET and its Fabrication Process},
  booktitle = {2006 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices, Ext. Abst.},
  year = 2006,
}

@inproceedings{CTT100530145,
  author = {大見俊一郎 and 黒瀬朋紀 and 佐藤雅樹},
  title = {HfNのECRプラズマ酸化によるHfON薄膜の形成},
  booktitle = {電子情報通信学会技術研究報告},
  year = 2006,
}

@inproceedings{CTT100530148,
  author = {Masaki Satoh and Shun-ichiro Ohmi and Tetsushi Sakai},
  title = {Characterization of n-MISFETs with Ultrathin HfO<sub>x</sub>N<sub>y</sub> Gate Insulator Formed by ECR-Ar/N<sub>2</sub> Plasma Nitridation},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100530147,
  author = {Shun-ichiro Ohmi and Tomoyuki Nakanishi and Ken-ichi Yahashi and Tetsushi Sakai},
  title = {Novel Fabricaition Process for Multi SOI Layers Using Selective Etching of SiGe in Multi Si/SiGe Layers},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100530402,
  author = {大見俊一郎},
  title = {半導体の基礎：半導体とはどのようなものであるか},
  booktitle = {プレスジャーナル},
  year = 2006,
}

@inproceedings{CTT100530403,
  author = {佐藤雅樹 and 黒瀬朋紀 and 大見俊一郎},
  title = {ECR-Ar/N<sub>2</sub>プラズマにより形成したHfO<sub>x</sub>N<sub>y</sub>膜を用いたn-MISFETの作製},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100542278,
  author = {大熊直樹 and 澤熊悠 and 大見俊一郎},
  title = {せり上げPtSi-SALICIDEにおける選択エッチングプロセスの検討},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100822233,
  author = {川下道宏 and 山崎浩史 and 大見俊一郎 and 櫻庭政夫 and 室田淳一 and 酒井徹志.},
  title = {TML-MOSFETにおける極微細3次元チャネル形成プロセスの検討},
  booktitle = {第53回応用物理学関係連合講演会講演予稿集},
  year = 2006,
}

@inproceedings{CTT100399502,
  author = {大見俊一郎},
  title = {耐熱性金属との混晶化によるPtSiの仕事関数制御とせり上げsalicideプロセスへの応用},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100399485,
  author = {仲西知之 and 高橋博 and 矢橋健一 and 大見俊一郎 and 酒井徹志},
  title = {多層Si/SiGe構造におけるSiGe層横方向選択エッチングと多層SOI構造の形成},
  booktitle = {電子情報通信学会技術研究報告},
  year = 2005,
}

@inproceedings{CTT100399488,
  author = {黒瀬朋紀 and 佐藤雅樹 and 大見俊一郎},
  title = {HfNのECR Ar/O<sub>2</sub>プラズマ酸化プロセスによる極薄HfSiONの形成},
  booktitle = {電子情報通信学会技術研究報告},
  year = 2005,
}

@inproceedings{CTT100399487,
  author = {佐藤雅樹 and 黒瀬朋紀 and 大見俊一郎},
  title = {ECR-Ar/N<sub>2</sub>プラズマにより形成したHfON膜の極薄膜化に関する検討},
  booktitle = {電子情報通信学会技術研究報告},
  year = 2005,
}

@inproceedings{CTT100399501,
  author = {S. Ohmi and Y. Kato and H. Fujiura and Y. Sawakuma and N. Ohkuma},
  title = {Effect of Ultra-thin Ti Layer on PtSi Work Function Modulation},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100399480,
  author = {佐藤雅樹 and 黒瀬朋紀 and 大見俊一郎},
  title = {極薄HfO<sub>2</sub>薄膜のECR Ar/N<sub>2</sub>プラズマ窒化条件の検討},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100399478,
  author = {黒瀬朋紀 and 佐藤雅樹 and 大見俊一郎},
  title = {HfNのECR Ar/O<sub>2</sub>プラズマ酸化プロセスによる極薄HfSiONの形成},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100822234,
  author = {川下道宏 and 大見俊一郎 and 櫻庭政夫 and 室田淳一 and 酒井徹志.},
  title = {TML(Twin-Multi-Layer Channel) MOSFETの作製プロセスに関する検討},
  booktitle = {第66回応用物理学会学術講演会講演予稿集},
  year = 2005,
}

@inproceedings{CTT100541140,
  author = {Shun-ichiro Ohmi and Tomoki Kurose and Masaki Satoh and Takafumi Uchikawa},
  title = {ECR Ar/N<sub>2</sub> Plasma Nitridation of HfO<sub>2</sub> for High-k Gate Insulator Applications},
  booktitle = {2005 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices, Ext. Abst.},
  year = 2005,
}

@inproceedings{CTT100389821,
  author = {藤裏弘樹 and 加藤有亮 and 大見俊一郎 and 酒井徹志},
  title = {Si/Pt/Si(100)積層構造のシリサイド化によるPtSiの形成},
  booktitle = {第52回応用物理学関係連合講演会講演予稿集},
  year = 2005,
}

@inproceedings{CTT100820420,
  author = {川下道宏 and 山崎浩史 and 袴田佳孝 and 大見俊一郎 and 櫻庭政夫 and 室田淳一 and 酒井徹志.},
  title = {新構造TML(Twin-Multi-Layer Channel)MOSFET},
  booktitle = {第52回応用物理学関係連合講演会講演予稿集},
  year = 2005,
}

@inproceedings{CTT100389822,
  author = {森俊介 and 中港努 and 大見俊一郎 and 酒井徹志},
  title = {ECRスパッタ法による3次元ゲート構造上への高誘電率絶縁膜の形成},
  booktitle = {第52回応用物理学関係連合講演会講演予稿集},
  year = 2005,
}

@inproceedings{CTT100387852,
  author = {T. Kurose and T. Uchikawa and S. Ohmi and T. Sakai},
  title = {HfO<sub>x</sub>N<sub>y</sub> Thin Films Formed by ECR Ar/O<sub>2</sub> Plasma Oxidation of HfN Thin Films},
  booktitle = {The 15th Symposium of The Materials Research Society of Japan},
  year = 2004,
}

@inproceedings{CTT100387851,
  author = {H. Ohri and T. Yamazaki and S. Ohmi and T. Sakai},
  title = {A Study on Selective Etching of SiGe Layers and Electrical Characteristics of MOS Diodes Formed after Selective Etching in SBSI Process},
  booktitle = {Third International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of properties and applications to ultrahigh speed and opto-electronic devices},
  year = 2004,
}

@inproceedings{CTT100387850,
  author = {S. Ohmi and H. Ohri and T. Yamazaki and M. Sakuraba and J. Murota and T. Sakai},
  title = {Novel SOI Fabrication Process Utilizing the Selective Etching for Si/SiGe Stacked Layers: Separation by Bonding Si Islands Technology (SBSI)},
  booktitle = {Third International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of properties and applications to ultrahigh speed and opto-electronic devices},
  year = 2004,
}

@inproceedings{CTT100387836,
  author = {中光豊 and 中港努 and 内川偉史 and 大見俊一郎 and 酒井徹志},
  title = {AlO<sub>x</sub>/Si(100)界面特性のECRスパッタ条件依存性},
  booktitle = {第65回応用物理学会学術講演会},
  year = 2004,
}

@inproceedings{CTT100387849,
  author = {T. Yamazaki and S. Ohmi and S. Morita and H. Ohri and J. Murota and M. Sakuraba and H. Omi and T. Sakai},
  title = {Separation by Bonding Si Islands (SBSI) for Adavnced CMOS LSIs},
  booktitle = {2004Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices},
  year = 2004,
}

@inproceedings{CTT100495906,
  author = {Tetsushi Sakai and Takashi Yamazaki and Shun-ichiro Ohmi and Shinya Morita and Hiroyuki Ori and Junichi Murota and Masao Sakuraba and HIroo Omi and Yasuo Takahashi},
  title = {Separation by Bonding Si Islands (SBSI) for LSI Applications},
  booktitle = {Second International SiGe Technology and Device Meeting},
  year = 2004,
}

@inproceedings{CTT100495907,
  author = {Takashi Yamazaki and Tomohide Sekikawa and Shinya Morita and Yoshitaka Hakamada and Hiroyuki Ohri and Shun-ichiro Ohmi and Tetsushi Sakai},
  title = {A Study on Etching of SiGe Layers in SiGe/Si Systems for Device Applications},
  booktitle = {Material Research Society Fall Meeting Abstracts},
  year = 2003,
}

@inproceedings{CTT100402933,
  author = {Go Yamanaka and Takafumi Uchikawa and Shun-ichiro Ohmi and Tetsushi Sakai},
  title = {AlON Thin Films Formed by ECR Plasma Oxidation for High-k gate Insulator Application},
  booktitle = {Material Research Society Fall Meeting Abstracts},
  year = 2003,
}

@inproceedings{CTT100494351,
  author = {S. Ohmi and I. Ueda and Y. Kobayashi and K. Tsutsui and H. Iwai},
  title = {Electrical characteristics of rare-earth oxides stacked-layer structures},
  booktitle = {Ext. Abst. of International Workshop on Gate Insulator},
  year = 2003,
}

@inproceedings{CTT100492673,
  author = {Yongshik Kim and Atsushi Kuriyama and Isao Ueda and Shun-ichiro OHMI and Kazuo Tsutsui and HIROSHI IWAI},
  title = {Analysis of Electrical Characteristics of La2O3 Thin Film Annealed in Vacuum and Others},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100492671,
  author = {Ryota Higaki and Kazuo Tsutsui and Yuichiro Sasaki and Sadahiro Akama and Bunji Mizuno and Shun-ichiro OHMI and HIROSHI IWAI},
  title = {Effect of gas phase absorption into Si substrates on plasma doping process},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100494352,
  author = {S. Ohmi and H. Yamamoto and J. Taguchi and K. Tsutsui and H. Iwai},
  title = {Effect of Vacuum Annealing on High-k Dy<sub>2</sub>O<sub>3</sub> Thin Films Deposited on Si(100)},
  booktitle = {Ext. Abst. of the 2003 Intenational Conference on Solid State Devices and Materials},
  year = 2003,
}

@inproceedings{CTT100600007,
  author = {野平博司 and 白石 貴義 and 高橋 健介 and 柏木 郁未 and 大島 千鶴 and 大見俊一郎 and 岩井洋 and 城森 慎司 and 中嶋 薫 and 鈴木 基史 and 木村 健二 and 服部 健雄},
  title = {極薄希土類酸化膜/Si(100)界面構造（極薄ゲート絶縁膜・シリコン界面の評価技術・解析技術）},
  booktitle = {電子情報通信学会技術研究報告、SDM、シリコン材料・デバイス},
  year = 2003,
}

@inproceedings{CTT100495941,
  author = {T. Sakai and S. Ohmi and D. Sasaki and M. Sakuraba and J. Murota},
  title = {A Proposal of Multi-Layer Channel MOSFET: The Application of Selective Etching for Si/SiGe Stacked Lyaers},
  booktitle = {Abst. First International SiGe Technology and Device Meeting},
  year = 2003,
}

@inproceedings{CTT100830722,
  author = {Ikmi Kashiwagi and Chizuru Ohshima and Yongshik Kim and Shun-ichiro Ohmi and Kazuo Tsutsui and Hiroshi Iwai},
  title = {Dependence of Gd2O3 Thin Film Properties on Si Substrate Orienteation},
  booktitle = {},
  year = 2002,
}

@inproceedings{CTT100455774,
  author = {徳光永輔 and 大見俊一郎 and 岩井洋},
  title = {High-k　ゲート絶縁膜用酸化物材料の研究},
  booktitle = {電気学会電子材料研究会資料},
  year = 2001,
}

@misc{CTT100594375,
  author = {大見俊一郎},
  title = {強誘電体によるAlGaAs/GaAs系2次元電子ガスの制御とデバイス応用に関する研究},
  year = 1996,
}

@misc{CTT100884604,
  author = {大見俊一郎},
  title = {強誘電性薄膜の形成方法、それを備える半導体装置},
  howpublished = {公開特許},
  year = 2022,
  month  = {},
  note   = {PCT/JP2022/006613(2022/02/18), WO 2022/190817(2022/09/15)}
}


@misc{CTT100900358,
  author = {大見俊一郎 and 長岡　克己 and 相澤　俊},
  title = {積層体、積層体を含む電子源及び電子デバイス、並びに積層体の製法及び浄化方法},
  howpublished = {公開特許},
  year = 2023,
  month  = {},
  note   = {特願2021-154427(2021/09/22), 特開2023-045834(2023/04/03)}
}


@misc{CTT100886514,
  author = {大見俊一郎},
  title = {半導体装置および浮遊ゲートデバイスの製造方法},
  howpublished = {公開特許},
  year = 2022,
  month  = {},
  note   = {特願2021-082485(2021/05/14), 特開2022-175792(2022/11/25)}
}


@misc{CTT100884606,
  author = {大見俊一郎},
  title = {半導体装置および浮遊ゲートデバイスの製造方法},
  howpublished = {公開特許},
  year = 2022,
  month  = {},
  note   = {特願2021-028111(2021/02/25), 特開2022-129448(2022/09/06)}
}


@misc{CTT100880502,
  author = {大見俊一郎},
  title = {半導体装置},
  howpublished = {公開特許},
  year = 2022,
  month  = {},
  note   = {特願2020-158828(2020/09/23), 特開2022-052432(2022/04/04)}
}


@misc{CTT100845882,
  author = {大見俊一郎},
  title = {トランジスタおよび不揮発性メモリ},
  howpublished = {登録特許},
  year = 2023,
  month  = {},
  note   = {特願2019-122028(2019/06/28), 特開2021-009893(2021/01/28), 特許第7357901号(2023/09/29)}
}


@misc{CTT100793210,
  author = {大見俊一郎 and 政広　泰　},
  title = {半導体デバイス電極用のシリサイド合金膜及びシリサイド合金膜の製造方法},
  howpublished = {登録特許},
  year = 2018,
  month  = {},
  note   = {特願2017-524988(2016/06/24), 再表2016/208704(2018/04/12), 特許第6455847号(2018/12/28)}
}


@misc{CTT100742144,
  author = {大見俊一郎 and 政広　泰},
  title = {半導体デバイス電極の製造方法},
  howpublished = {登録特許},
  year = 2017,
  month  = {},
  note   = {特願2015-128775(2015/06/26), 特開2017-017050(2017/01/19), 特許第6086550号(2017/02/10)}
}


@misc{CTT100676895,
  author = {大見俊一郎 and 大見　忠弘},
  title = {有機半導体素子及びそれを備えたCMIS半導体装置},
  howpublished = {公開特許},
  year = 2014,
  month  = {},
  note   = {特願2012-271769(2012/12/12), 特開2014-116564(2014/06/26)}
}


@misc{CTT100573373,
  author = {大見俊一郎 and 加藤　樹里},
  title = {半導体装置の製造方法},
  howpublished = {公開特許},
  year = 2008,
  month  = {},
  note   = {特願2007-290698(2007/11/08), 特開2008-160073(2008/07/10)}
}


@misc{CTT100573144,
  author = {大見俊一郎 and 加藤　樹理 and 金本　啓},
  title = {半導体装置の製造方法},
  howpublished = {登録特許},
  year = 2011,
  month  = {},
  note   = {特願2006-151441(2006/05/31), 特開2007-324292(2007/12/13), 特許第4854074号(2011/11/04)}
}


@misc{CTT100577201,
  author = {酒井徹志 and 大見俊一郎 and 山崎　崇},
  title = {半導体基板、半導体装置及び半導体基板の作成方法},
  howpublished = {公開特許},
  year = 2005,
  month  = {},
  note   = {特願2005-514563(2004/10/04), 特再表2005-036638(2005/04/21)}
}




@phdthesis{CTT100594375,
  author = {大見俊一郎},
  title = {強誘電体によるAlGaAs/GaAs系2次元電子ガスの制御とデバイス応用に関する研究},
  school = {東京工業大学},
  year = 1996,
}