@article{CTT100493946,
author = {Yasunori Kitaichi and Koji Kawasaki and Misaichi Takeuchi and Yoshinobu Aoyagi},
title = {Electrical Transport Property of Single-Electron Transistor using a Nano-Vertical GaN Quantum Dot},
journal = {Extended Abstracts (The 64th Autumn Meeting, 2003) The Japan Society of Applied Physics},
year = 2003,
}
@article{CTT100493951,
author = {Koji Kawasaki and Yasunori Kitaichi and Yoshinobu Aoyagi},
title = {Single-electron transistors using a vertical GaN quantum dot for infrared light operations},
journal = {New Phenomena in Mesoscopic Structures 6 Surfaces and Interfaces in Mesoscopic Devices 4, November 30-December 5, 2003, Wailea Marriott Resort Maui, Hawaii},
year = 2003,
}
@article{CTT100493959,
author = {Koji Kawasaki and Kazuo Tsutsui and Yoshinobu Aoyagi},
title = {Control of Electron Transport through Position-Controlled Nitride Quantum Dots and Resonant Tunneling Structure with Variable Enegy Band Alignment },
journal = {The 2003 CREST Symposium on Function Evolution of Materials and Devices Based on Electron / Photon Related Phenomena, October 30-31, 2003, Kokuyo Hall (Shinagawa)},
year = 2003,
}
@article{CTT100472214,
author = {Koji Kawasaki and Ikuo Nakamatsu and Hideki Hirayama and Kazuo Tsutsui and Yoshinobu Aoyagi},
title = {Formation of GaN nanopillars by selective area growth using ammonia gas source molecular beam epitaxy},
journal = {Journal of Crystal Growth},
year = 2002,
}
@article{CTT100471584,
author = {川崎宏治 and 青柳克信},
title = {GaN量子ドットの位置制御とデバイス応用（招待講演）},
journal = {近接場光学研究グループ 第11回研究討論会 予稿集、東京工業大学 すずかけ台キャンパス、２００２年６月２８日},
year = 2002,
}
@article{CTT100471592,
author = {Koji Kawasaki and Hideki Hirayama and Kazuo Tsutsui and Yoshinobu Aoyagi},
title = {Selective area growth of nitride nanopillars for future devices},
journal = {Inter. Workshop on Nitride Semiconductors, 22-25 July 2002, Aachen, Germany.},
year = 2002,
}
@article{CTT100472284,
author = {井上振一郎 and 梶川浩太郎 and 川崎宏治 and 青柳克信},
title = {非線形光学polynerを用いたフォトニック結晶導波路の作製とバンド構造の観測},
journal = {第63回応用物理学会学術講演会,２００２年９月２４日-２７日、新潟大学},
year = 2002,
}
@article{CTT100472278,
author = {谷口学 and 川崎宏治 and 田昭二 and 武内道一 and 青柳克信},
title = {RF-MBE法によるGaNへのMgとSiの交互供給コドーピング},
journal = {第63回応用物理学会学術講演会,２００２年９月２４日-２７日、新潟大学},
year = 2002,
}
@article{CTT100472272,
author = {金井大 and 川崎宏治 and 平山秀樹 and 筒井一生 and 青柳克信},
title = {GaN量子ドットを用いた単一電子トランジスタの高温動作},
journal = {第４９回応用物理学関係連合講演会,２００２年３月２７日-３０日、東海大学（湘南校舎）},
year = 2002,
}
@article{CTT100472270,
author = {川崎宏治 and 金井大 and 平山秀樹 and 筒井一生 and 青柳克信},
title = {選択成長法により形成した縦型GaN/AlN量子ドットを用いた単一電子素子の作製},
journal = {第４９回応用物理学関係連合講演会,２００２年３月２７日-３０日、東海大学（湘南校舎）},
year = 2002,
}
@article{CTT100472221,
author = {川崎宏治 and 青柳克信},
title = {縦型GaN量子ドットの単一電子輸送},
journal = {第63回応用物理学会学術講演会,２００２年９月２４日-２７日、新潟大学 },
year = 2002,
}
@article{CTT100457223,
author = {K. Kawasaki and D. Yamazaki and A. Kinoshita and H. Hirayama and K. Tsutsui and Y. Aoyagi},
title = {GaN quantum dot formation by self-assembling droplet epitaxy and application to single-electron transistors},
journal = {Appl. Phys. Lett.},
year = 2001,
}
@article{CTT100461689,
author = {中松郁雄 and 川崎宏治 and ｱﾄﾞﾘｱﾝｱﾌﾞﾗﾒｽｸ and 平山秀樹 and 筒井一生 and 青柳克信},
title = {GaNナノピラーの選択成長による結合量子ドットの作製},
journal = {第６２回応用物理学会学術講演会 講演予稿集、２００１年９月愛知工業大学},
year = 2001,
}
@article{CTT100461688,
author = {川崎宏治 and 筒井一生 and 青柳克信},
title = {GaN結合量子ドットの形成とその電子輸送特性},
journal = {第６２回応用物理学会学術講演会 講演予稿集、２００１年９月愛知工業大学},
year = 2001,
}
@article{CTT100461558,
author = {Koji Kawasaki and Kazuo Tsutsui and Yoshinobu Aoyagi},
title = {Fabrication of Single Electron Transistor Using GaN Coupled Quantum Dots},
journal = {The Second CREST Symposium on Function Evolution of Materials and Devices based on Electron / Photon related Phenomena, October 25, 2001 Kokuyo Hall (Shinagawa)},
year = 2001,
}
@article{CTT100461557,
author = {Kazuo Tsutsi and Koji Kawasaki and Yoshinobu Aoyagi},
title = {Fabrication of Quantum Dot Arrays with Artificial Site-control Using Electron Beam Surface Modification},
journal = {The Second CREST Symposium on Function Evolution of Materials and Devices based on Electron / Photon related Phenomena, October 25, 2001 Kokuyo Hall (Shinagawa)},
year = 2001,
}
@article{CTT100461556,
author = {Koji Kawasaki and Daisuke Yamazaki and Masaki Suzuki and Kazuo Tsutsui and Yoshinobu Aoyagi},
title = {Single Electron Transistor using GaN Coupled Quantum Dots Formed on SiO2/Si Substrate},
journal = {Extended Abstracts of the 2001 International Conference on SOLID STATE DEVICES AND MATERIALS, Tokyo, 2001},
year = 2001,
}
@article{CTT100461555,
author = {Koji Kawasaki and Daisuke Yamazaki and Ikuo Nakamatsu and Kazuo Tsutsui and Yoshinobu Aoyagi},
title = {Formation and Positioning of GaN Nanostructures by Focused Electron Beam Induced Droplet Epitaxy},
journal = {Abstracts of The Thirteenth International Conference on Crystal Growth in Conjunction with The eleventh International Conference on Vapor Growth and Epitaxy,30 July-4 August 2001, Doshisha University, Kyoto, Japan},
year = 2001,
}
@article{CTT100461552,
author = {Koji Kawasaki and Ikuo Nakamatsu and Kazuo Tsutsui and Yoshinobu Aoyagi},
title = {Selective Area Growth of GaN Nanopillars by Molecular Beam Epitaxy on AlGaN/SiC(0001) substrate},
journal = {Abstracts of The Thirteenth International Conference on Crystal Growth in Conjunction with The eleventh International Conference on Vapor Growth and Epitaxy,30 July-4 August 2001, Doshisha University, Kyoto, Japan},
year = 2001,
}
@article{CTT100461551,
author = {Koji Kawasaki and Ikuo Nakamatsu and Kazuo Tsutsui and Yoshinobu Aoyagi},
title = {Selective Area Growth of GaN Nanopillars on AlGaN/SiC(0001) by Gas Source Molecular Beam Epitaxy},
journal = {Abstarct of the Fourth International Conference on Nitride Semiconductors, Denver. Colorado USA, July 16-20,2001},
year = 2001,
}
@article{CTT100493936,
author = {Koji Kawasaki and Yasunori Kitaichi and Misaichi Takeuchi and Yoshinobu Aoyagi},
title = {Single-Electron Transistors with Large-Energy Binary States in a GaN Quantum Dot },
journal = {Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials, Tokyo},
year = 2003,
}
@article{CTT100527514,
author = {Koji Kawasaki and Choshiro Koike and Misaichi Takeuchi and Yoshinobu Aoyagi},
title = {Vertical AlGaN deep ultraviolet light emitting diode emitting at 322 nm fabricated by the laser lift-off technique},
journal = {Applied Physics Letters},
year = 2006,
}
@article{CTT100461550,
author = {Koji Kawasaki and Daisuke Yamazaki and Ikuo Nakamatsu and Kazuo Tsutsui and Yoshinobu Aoyagi},
title = {Fabrication of GaN Coupled Dots Structure by Focused Electron Eeam Induced Droplet Epitaxy and Application to Single Electron Transistors},
journal = {Abstracts of The 45th International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication, The J.W.Marriott Hotel Washington, DC, May 29 -June 1, 2001},
year = 2001,
}
@article{CTT100461222,
author = {川崎宏治 and 山崎大輔 and 筒井一生 and 青柳克信},
title = {液滴エピタキシー法により自然形成させたGaN量子ドットの光学特性},
journal = {第４７回応用物理学関係連合講演会,2000.3、青山学院大学},
year = 2000,
}
@article{CTT100461669,
author = {Koji Kawasaki and Daisuke Yamazaki and Kazuo Tsutsui and Yoshinobu Aoyagi},
title = {Site-Control of Self-Assembling GaN Quantum Dots and Fabrication of Single Electron Transistors},
journal = {Abstarcts of Material Research Society 2000 Fall meeting, November 27 - December 1, Boston, Massachusetts, USA},
year = 2000,
}
@article{CTT100461667,
author = {Koji Kawasaki and Daisuke Yamazaki and Ikuo Nakamatsu and Kazuo Tsutsui},
title = {Position Control of GaN Quantum Dots by Focused Electron Beam Induced Droplet Epitaxy and Fabrication of Single Electron Transistors},
journal = {The First CREST Symposium on Function Evolution of materials and Devices based on Electron/Photon Related Phenomena, October 26, 2000 JA Hall (Ohtemachi)},
year = 2000,
}
@article{CTT100461223,
author = {山崎大輔 and 川崎宏治 and 筒井一生 and 青柳克信},
title = {電子ビーム位置制御液滴エピタキシー法によるGaN量子ドットアレイの形成},
journal = {第４７回応用物理学関係連合講演会,2000.3、青山学院大学},
year = 2000,
}
@article{CTT100461696,
author = {山崎大輔 and 川崎宏治 and 筒井一生 and 青柳克信},
title = {電子ビーム位置制御液滴エピタキシー法によるGaNドットの近接配置},
journal = {第６１回応用物理学会学術講演会 講演予稿集、2000.9、北海道工業大学},
year = 2000,
}
@article{CTT100461697,
author = {川崎宏治 and 山崎大輔 and 筒井一生 and 青柳克信},
title = {自然形成GaNドットを用いた単電子トランジスタの作製},
journal = {第６１回応用物理学会学術講演会 講演予稿集、2000.9、北海道工業大学},
year = 2000,
}
@article{CTT100432752,
author = {K. Kawasaki and M. Mochizuki and K. Tsutusui},
title = {Single-Electron Devices Formed by Self-Ordering Metal Nanodroplet Arrays on Epitaxial CaF２ Film},
journal = {Jpn. J. Appl. Phys. 38 (1B)},
year = 1999,
}
@article{CTT100432751,
author = {K. Kawasaki and K. Tsutsui},
title = { Heteroepitaxy of GaAs on GaF２/Si(111) by Surface Free Energy Modulation Method},
journal = {Mat. Res. Soc. Symp. Proc.},
year = 1999,
}
@article{CTT100432722,
author = {川崎宏治 and 筒井一生},
title = {二次元島形成法によりCaF２/Si(111)基板上に成長させたGaAsの表面モホロジー},
journal = {第46回応用物理学会関係連合講演会講演予稿集},
year = 1999,
}
@article{CTT100457224,
author = {K. Kawasaki and K.Tsutsui},
title = {Effects of the two-step growth growth method for GaAs grown on CaF2/Si(111) with electron beam surface modification technique},
journal = {Jpn.J. Appl. Phys},
year = 1999,
}
@article{CTT100432754,
author = {K. Kawasaki and D. Yamazaki and K. Tsutui and Y. Aoyagi},
title = {Control of Formation Sites of Self-Assembling GaN Dots by Focused Electron beam Exposure},
journal = {Mat. Res. Soc. Symp. Abs., W12.2},
year = 1999,
}
@article{CTT100457225,
author = {K. Kawasaki and M. Mochizuki and K. Tsutsui},
title = {Single electron devices formed by self-ordering metal nanodroplet arrays on epitaxxial CaF2 film},
journal = {Jpn.J. Appl. Phys},
year = 1999,
}
@article{CTT100432763,
author = {川崎大輔 and 川崎宏治 and 望月麻理恵 and 筒井一生 and 青柳克信},
title = {液滴エピタキシー法により形成されるGaN量子ドットの集束電子ビームによる位置制御},
journal = {第60回応用物理学会学術講演会講演予稿集},
year = 1999,
}
@article{CTT100420664,
author = {K. Kawasaki and K. Tsutsui},
title = {Multitunneling junction of metal droplets formed on CaF┣D22┫D2 step edges in a self-assembling manner},
journal = {Japanese Journal of Applied Physics},
year = 1998,
}
@article{CTT100420663,
author = {K. Kawasaki and K. Tsutsui},
title = {Surface free energy modification of CaF┣D22┫D2 by atomic-height island formation on heteroepitaxy of GaAs on CaF┣D22┫D2},
journal = {Applied Surface Science},
year = 1998,
}
@article{CTT100420666,
author = {K. Kawasaki and K. Tsutsui},
title = {Observations of GaAs/CaF┣D22┫D2 heterointerface formation by electron beam surface modification and its effects},
journal = {Applied Surface Science},
year = 1997,
}
@article{CTT100420665,
author = {K. Kawasaki and K. Tsutsui},
title = {Optical in situ observation of electron beam induced surface modification on epitaxial fluoride films},
journal = {Japanese Journal of Applied Physics},
year = 1997,
}
@inproceedings{CTT100527493,
author = {Koji Kawasaki and Tomohiro Maegawa and Misaichi Takeuchi and Yoshinobu Aoyagi},
title = {Fabrication of Deep Ultraviolet Light-Emitting Diodes with a Large Emission Area Using a Laser Lift-Off Technique},
booktitle = {Materials Research Society},
year = 2006,
}
@inproceedings{CTT100527497,
author = {Ryo Kajitani and Misaichi Takeuchi and Koji Kawasaki and Yoshinobu Aoyagi},
title = {Structural Properties of AlxIn1-xN Films Grown by Metalorganic Chemical Vapor Deposition},
booktitle = {Materials Research Society},
year = 2006,
}
@inproceedings{CTT100527490,
author = {Misaichi Takeuchi and Hiroshi Shimizu and Koji Kawasaki and Yoshinobu Aoyagi},
title = {Gowth-mode Alternating Method for High-Quality AlN Layers on Sapphire by Low-Pressure Flow-Modulation MOCVD (TuP1-75)},
booktitle = {The Japan Society of Applied Physics},
year = 2006,
}
@inproceedings{CTT100527474,
author = {Koji Kawasaki and Tomohiro Maegawa and Misaichi Takeuchi and Kazuya Takada and Yoshinobu Aoyagi},
title = {Vertical AlGaN Deep Ultraviolet light-Emitting Diodes Using a Laser Lift-Off Technique for High Al Content AlGaN (WeOD2-2)},
booktitle = {The Japan Society of Applied Physics},
year = 2006,
}
@inproceedings{CTT100527491,
author = {Misaichi Takeuchi and Ryo Kajitani and Hiroshi Shimizu and Koji Kawasaki and Yoshinobu Aoyagi},
title = {Removable Buffer Structures of Vertical-Type AlGaN-Based Deep UV LEDs for Laser Lift-Off Technique (TuP2-40)},
booktitle = {The Japan Society of Applied Physics},
year = 2006,
}
@inproceedings{CTT100527630,
author = {前川倫宏 and 川崎宏治 and 武内道一 and 青柳克信},
title = {大面積AlGaN系縦型深紫外LEDの作製},
booktitle = {日本応用物理学会},
year = 2006,
}
@inproceedings{CTT100528799,
author = {武内道一 and 清水博史 and 梶谷亮 and 川崎宏治 and 木下亨 and 高田和哉 and 青柳克信},
title = {サファイヤ基板上へAl極性高品質AlN層を形成する改良型フローモジュレーションMOCVD法},
booktitle = {日本応用物理学会},
year = 2006,
}
@inproceedings{CTT100528804,
author = {清水博史 and 武内道一 and 梶谷亮 and 川崎宏治 and 青柳克信},
title = {深紫外発光素子用AlGaN層と下地テンプレートAlN層の相関},
booktitle = {日本応用物理学会},
year = 2006,
}
@inproceedings{CTT100527485,
author = {M. Takuuchi and H. Shimizu and K. Kawasaki and Y. kumagai and A. Koukitu and Y. Aoyagi},
title = {Improvement of crystalline quality of N-polar AlN layers on c-plane sapphire by low-pressure flow-modulated MOCVD (Tu-A1.3)},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100405738,
author = {Misaichi Takeuchi and Shigenori Hayakawa and Ryo Kajitani and Toru Kinoshita and Koji Kawasaki and Kazuya Takada and Yoshinobu Aoyagi},
title = {Two-step Annealing of GaN Buffer layers for High-quality AlxGa1-xN (x=0.35) by Low-pressure MOCVD},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100406546,
author = {Koji Kawasaki and Choshiro Koike and Misaichi Takeuchi and Yoshinobu Aoyagi},
title = {AlGaN Deep Ultraviolet Light-Emitting Diodes with Vertical Structure},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100406551,
author = {N. Kawaguchi and K. Kawasaki and M. Takeuchi and T. Kinoshita and K. Takada and Y. Aoyagi},
title = {Study on high power AlGaN deep ultraviolet LED fabrication},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100406558,
author = {M. Takeuchi and S. Hayakawa and R. Kajitani and T. Kinoshita and K. Kawasaki and K. Takada and Y. Aoyagi},
title = {In-situ monitoring during LT -GaN-2-step anneal-AlGaN growth in MOCVD by multi-channel reflectmetry},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100406553,
author = {K. Kawasaki and C. Koike and M. Takeuchi and Y. Aoyagi},
title = {Structure for high power vertical AlgaN deep ultraviolet light emitting diode},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100406549,
author = {Koji Kawasaki and Noriaki Kawaguchi and Chosiro Koike and Toru Kinoshita and Misaichi Takeuchi and Kennji Nomura and Hideo Hosono and Kazuya Takada and Yoshinobu Aoyagi},
title = {AlGaN Deep Ultraviolet Light-Emitting Diodes with New Structure},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100405731,
author = {M. Takeuchi and S. Hayakawa and T. Kinoshita and K. Kawasaki and Y. Aoyagi},
title = {New growth procedure of buffer layers for high-quality AlxGa1-xN (x=0.35) by low-pressure MOCVD},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100405732,
author = {Toru Kinoshita and Misaichi Takeuchi and Koji Kawasaki and Kazuya Takada and Yoshiobu Aoyagi},
title = {Effect of AlN nucleation processeson polarity, mosaicity and morpforogy of AlN thin films},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100406507,
author = {M. Itoh and T. Kinoshita and C. Koike and M. Takeuchi and K. Kawasaki and Y. Aoyagi},
title = {Fabrication of GaN-based nanostructure devices by combination of dry and wet etching},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100405735,
author = {K. Kawasaki and C. Koike and M. Takeuchi and K. Numura and N. Kawaguchi and T. Kinoshita and K. Takada and H. Hosono and Y. Aoyagi},
title = {New AlgaN LED structure for high power deep ultraviolet light source},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100406508,
author = {R and Kajitani and M. takeuchi and T. Kinoshita and S. Hayakawa and K. Kawasaki and Y. Aoyagi},
title = {Study of polarization effect in AlGaN/AlGaN double quantum wells},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100406506,
author = {M. Itoh and T. Kinoshita and C. Koike and M. Takeuchi and K. Kawasaki and Y. Aoyagi},
title = {Nano-fabrication of GaN-based striped structures by combination of dry and wet etching},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100406505,
author = {M. Itoh and K. Kawasaki and M. Takeuchi and T. Kinoshita and Y. Aoyagi},
title = {Fabrication of damage-free nanostructures on AlGaN/GaN single-heterostructure},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100406559,
author = {S. Hayakawa and M. Takeuchi and T. Kinoshita and R. Kajitani and K. Kawasaki and Y. Aoyagi},
title = {MOCVD growth of high quality AlGaN layers on thin GaN layers/sapphire substrate},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100406560,
author = {R. Kajitani and M. Takeuchi and T. Kinoshita and S. Hayakawa and K. Kawasaki and Y. Aoyagi},
title = {Sutudy of AlxGa1-xN/AlyGa1-yN double quantum well structures},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100406561,
author = {T. Kinoshita and N. Kawaguchi and M. Takeuchi and K. Kawasaki and Y. Aoyagi},
title = {Growth and characterization of electrical properties of high Al content p-type AlAGaN},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100406562,
author = {K. Kawasaki and N. Kawaguchi and C. Koike and T. Kinoshita and M. Takeuchi and Y. Aoyagi},
title = {Fabrication of AlgaN deep ultraviolet light emitting diode with new structure},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100444641,
author = {F. Hirabayashi and S. Yamada and KOJI KAWASAKI and K. Tsutsui},
title = {Dot arrays fabricated by electron beam site control method and its application to single electron devices},
booktitle = {},
year = 2000,
}
@inproceedings{CTT100830726,
author = {Koji Kawasaki and Daisuke Yamazaki and Kazuo Tsutsui and Yoshinobu Aoyagi},
title = {Control of formation sites of self-assembling GaN dots by focused electron beam exposure},
booktitle = {},
year = 1999,
}
@inproceedings{CTT100830728,
author = {K. Tsutsui and A. Himura and M. Mochizuki and K. Kawasaki},
title = {High density metal dot array formed by electron beam induced nucleation method},
booktitle = {},
year = 1999,
}
@inproceedings{CTT100830828,
author = {K. Tsutsui and K. Kawasaki and M. Mochizuki and T. Matsubara},
title = {Site controlled metal and semiconductor quantum dots on epitaxial fluoride films},
booktitle = {},
year = 1998,
}
@inproceedings{CTT100830824,
author = {Koji Kawasaki and M. Mochizuki and Kazuo Tsutsui},
title = {Single electron transistors formed by self-ordering metal nanodroplet arrays on epitaxial CaF2 film},
booktitle = {},
year = 1998,
}
@inproceedings{CTT100830822,
author = {Koji Kawasaki and Kazuo Tsutsui},
title = {Surface free energy modification of CaF2 by atomic-height island formation on heteroepitaxy of GaAs on CaF2},
booktitle = {},
year = 1997,
}
@inproceedings{CTT100830820,
author = {Koji Kawasaki and Jun Takeshita and Kazuo Tsutsui},
title = {Multi-tunneling junctions of metal droplets formed on CaF2 step edges by self-assembling manner},
booktitle = {},
year = 1997,
}
@inproceedings{CTT100830812,
author = {K. Uejima and K. Kawasaki and K. Tsutsui},
title = {Fabrication of Ga droplets array site-controlled by electron beam surface modification},
booktitle = {},
year = 1996,
}
@misc{CTT100409730,
author = {川崎宏治 and 武内道一 and 青柳克信},
title = {深紫外窒化物系発光バイス},
year = 2006,
}
@misc{CTT100406504,
author = {青柳克信 and 田中悟 and 武内道一 and 平山秀樹 and 川崎宏治},
title = {深紫外発光素子の開発},
year = 2005,
}
@misc{CTT100594886,
author = {KOJI KAWASAKI},
title = {表面エネルギー変調によるCaF2/Si(111)基板上へのヘテロ構造形成に関する研究},
year = 1998,
}
@misc{CTT100594739,
author = {KOJI KAWASAKI},
title = {Si上GaAs中の熱歪の形状効果に関する研究},
year = 1991,
}
@misc{CTT100572886,
author = {川崎宏治 and 青柳克信 and 北野 雅裕 and 池田 善和},
title = {真空加熱プレス機},
howpublished = {登録特許},
year = 2013,
month = {},
note = {特願2007-018879(2007/01/30), 特開2008-183587(2008/08/14), 特許第5196795号(2013/02/15)}
}
@misc{CTT100573201,
author = {川崎宏治 and 青柳克信 and 歌野 和弘},
title = {レーザーリフトオフ法およびレーザーリフトオフ装置},
howpublished = {登録特許},
year = 2011,
month = {},
note = {特願2005-342734(2005/11/28), 特開2007-149988(2007/06/14), 特許第4883991号(2011/12/16)}
}
@misc{CTT100573002,
author = {青柳克信 and 川崎宏治 and 武内 道一( and 木下 亨},
title = {窒化物半導体の製造方法},
howpublished = {登録特許},
year = 2010,
month = {},
note = {特願2005-090952(2005/03/28), 特開2006-278402(2006/10/12), 特許第4544628号(2010/07/09)}
}
@misc{CTT100572946,
author = {青柳克信 and 川崎宏治 and 武内道一},
title = {半導体成長用基板および半導体膜の製造方法},
howpublished = {公開特許},
year = 2006,
month = {},
note = {特願2004-374976(2004/12/24), 特開2006-185962(2006/07/13)}
}
@phdthesis{CTT100594886,
author = {KOJI KAWASAKI},
title = {表面エネルギー変調によるCaF2/Si(111)基板上へのヘテロ構造形成に関する研究},
school = {東京工業大学},
year = 1998,
}
@mastersthesis{CTT100594739,
author = {KOJI KAWASAKI},
title = {Si上GaAs中の熱歪の形状効果に関する研究},
school = {徳島大学},
year = 1991,
}