@book{CTT100427154,
author = {筒井一生},
title = {よくわかる電子デバイス},
publisher = {オーム社},
year = 1999,
}
@book{CTT100427155,
author = {筒井一生},
title = {表面科学シリーズ4 表面・界面の電子状態},
publisher = {丸善},
year = 1987,
}
@article{CTT100918360,
author = {An Li and Takuya Hoshii and Kazuo Tsutsui and Hitoshi Wakabayashi and Kuniyuki Kakushima},
title = {Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO2 gate dielectric with H2O plasma},
journal = {Japanese Journal of Applied Physics},
year = 2024,
}
@article{CTT100918404,
author = {Yukimura Tokita and Takuya Hoshii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA},
title = {Identification of compressive strain in thin ferroelectric Al1–xScxN films by Raman spectroscopy},
journal = {Japanese Journal of Applied Physics},
year = 2024,
}
@article{CTT100896542,
author = {Masaki Otomo and Masaya Hamada and Ryo Ono and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Chemical states of PVD-ZrS2 film underneath scaled high-k film with self-oxidized ZrO2 film as interfacial layer},
journal = {Japanese Journal of Applied Physics},
year = 2023,
}
@article{CTT100896543,
author = {Takamasa Kawanago and Ryosuke Kajikawa and Kazuto Mizutani and Sung-Lin Tsai and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact},
journal = {IEEE Journal of the Electron Devices Society},
year = 2022,
}
@article{CTT100882668,
author = {Iriya Muneta and Takanori Shirokura and Pham Nam Hai and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure},
journal = {Scientific Reports},
year = 2022,
}
@article{CTT100881315,
author = {Taiga Horiguchi and Takuya Hamada and Masaya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
title = {Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing},
journal = {Japanese Journal of Applied Physics},
year = 2022,
}
@article{CTT100874628,
author = {M. Nishizawa and T. Hoshii and H. Wakabayashi and K. Tsutsui and Yoshiaki Daigo and Ichiro Mizushima and T. Yoda and K. Kakushima},
title = {Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate},
journal = {Japanese Journal of Applied Physics},
year = 2022,
}
@article{CTT100883067,
author = {Si-Meng Chen and Sung Lin Tsai and Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Edward Yi Chang and Kuniyuki KAKUSHIMA},
title = {GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation},
journal = {Japanese Journal of Applied Physics},
year = 2022,
}
@article{CTT100875619,
author = {Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Tien-Kan Chung and Edward Yi Chang and Kuniyuki Kakushima},
title = {Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films},
journal = {Japanese Journal of Applied Physics (JJAP)},
year = 2022,
}
@article{CTT100880933,
author = {Atsuki Miyata and Takuya Hoshii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA},
title = {Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure},
journal = {Japanese Journal of Applied Physics},
year = 2022,
}
@article{CTT100883068,
author = {Ryota Shibukawa and Sung Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA},
title = {Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films},
journal = {Japanese Journal of Applied Physics},
year = 2022,
}
@article{CTT100875615,
author = {Takamasa KAWANAGO and Takahiro Matsuzaki and Ryosuke Kajikawa and Iriya Muneta and Takuya HOSHII and Kuniyuki Kakushima and Kazuo TSUTSUI and Hitoshi WAKABAYASHI},
title = {Experimental demonstration of high-gain CMOS Inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs},
journal = {Japanese Journal of Applied Physics (JJAP)},
year = 2022,
}
@article{CTT100875617,
author = {Ryo Ono and Shinya Imai and Yuta Kusama and Takuya Hamada and Masaya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Emi Kano and Nobuyuki Ikarashi and Hitoshi Wakabayash},
title = {Elucidation of PVD MoS2 Film Formation Process and its Structure Focusing on Sub-Monolayer Region},
journal = {Japanese Journal of Applied Physics (JJAP)},
year = 2022,
}
@article{CTT100875618,
author = {Takuya Hamada and Masaya Hamada and Taiga Horiguchi and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
title = {High Seebeck Coefficient in PVD-WS2 Film with Grain-Size Enlargement},
journal = {Japanese Journal of Applied Physics (JJAP)},
year = 2022,
}
@article{CTT100875614,
author = {Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Edward Y. Chang and Kuniyuki Kakushima},
title = {Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement},
journal = {Japanese Journal of Applied Physics (JJAP)},
year = 2022,
}
@article{CTT100875613,
author = {Takuya Hamada and Masaya Hamada and Satoshi Igarashi and Taiga Horiguchi and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
title = {WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET with TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box},
journal = {Journal of the Electron Devices Society (J-EDS)},
year = 2021,
}
@article{CTT100855460,
author = {Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Tien-Kan Chung and Edward Yi Chang and Kuniyuki Kakushima},
title = {On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films},
journal = {Japanese Journal of Applied Physics (JJAP) （SSDM特集号）},
year = 2021,
}
@article{CTT100855459,
author = {S-L. Tsai and T. Hoshii and H. Wakabayashi and K. Tsutsui and T-K. Chung and E. Chang and K. Kakushima},
title = {Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering},
journal = {Applied Physics Letters},
year = 2021,
}
@article{CTT100855475,
author = {Jinhan Song and Atsuhiro Ohta and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
title = {High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer},
journal = {Japanese Journal of Applied Physics (JJAP) (Rapid Communication)},
year = 2021,
}
@article{CTT100855476,
author = {Junji Kataoka and Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
title = {A possible origin of the large leakage current in ferroelectric Al1-xScxN films},
journal = {Japanese Journal of Applied Physics (JJAP) (Rapid Communication)},
year = 2021,
}
@article{CTT100855464,
author = {Shinya Imai and Takuya Hamada and Masaya Hamada and Takanori Shirokura and Iriya Muneta and Kuniyuki Kakushima and Tetsuya Tatsumi and Shigetaka Tomiya and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Importance of Crystallinity Improvement in MoS2 film just after MoS2-Compound Sputtering even followed by Post Sulfurization for Chip-Size Fabrication},
journal = {Japanese Journal of Applied Physics (JJAP) （SSDM特集号）},
year = 2021,
}
@article{CTT100855467,
author = {Satoshi Igarashi and Yusuke Mochiduki and Haruki Tanigawa and Masaya Hamada and Kentaro Matsuura and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Self-Aligned-TiSi2 Bottom Contact with APM Cleaning and Post-annealing for Sputtered-MoS2 Film},
journal = {Japanese Journal of Applied Physics (JJAP) （SSDM特集号）},
year = 2021,
}
@article{CTT100855472,
author = {Junji Kataoka and Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui},
title = {N-type conduction of sputter-deposited polycrystalline Al0.78Sc0.22N films by Si ion implantation},
journal = {Applied Physics Express (APEX)},
year = 2021,
}
@article{CTT100855471,
author = {Masaya Hamada and Kentaro Matsuura and Takuya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {ZrS2 Symmetrical-Ambipolar FETs with Near-Midgap TiN Film for Both Top-Gate electrode and Schottky-Barrier Contact},
journal = {Japanese Journal of Applied Physics (JJAP) （SSDM特集号）},
year = 2021,
}
@article{CTT100855473,
author = {Takuya Hamada and Shigetaka Tomiya and Tetsuya Tatsumi and Masaya Hamada and Taiga Horiguchi and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Sheet Resistance Reduction of MoS2 Film using Sputtering and Chlorine Plasma Treatment followed by Sulfur Vapor Annealing},
journal = {Journal of the Electron Devices Society (J-EDS)},
year = 2021,
}
@article{CTT100855585,
author = {Masaya Hamada and Kentaro Matsuura and Takuro Sakamoto and Haruki Tanigawa and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Sulfurization even through Al2O3 Passivation Film Simultaneously Preventing Oxidation},
journal = {Japanese Journal of Applied Physics (JJAP)},
year = 2020,
}
@article{CTT100855454,
author = {Kentaro Matsuura and Masaya Hamada and Takuya Hamada and Haruki Tanigawa and Takuro Sakamoto and Atsushi Hori and Iriya Muneta and Takamasa Kawanago and Kuniyuki Kakushima and Kazuo},
title = {Normally-off sputtered-MoS2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration},
journal = {Japanese Journal of Applied Physics (JJAP) (Rapid Communication)},
year = 2020,
}
@article{CTT100822931,
author = {Kiyoshi Takeuchi and Munetoshi Fukui and Takuya Saraya and Kazuo Itou and Toshihiko Takakura and Shinichi Suzuki and Yohichiroh Numasawa and Naoyuki Shigyo and Kuniyuki Kakushima and Takuya Hoshii and Kazuyoshi Furukawa and Masahiro Watanabe and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Atsushi Ogura and Wataru Saito and Shin-ichi Nishizawa and Masanori Tsukuda and Ichiro Omura and Hiromichi Ohashi and Toshiro Hiramoto},
title = {Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs},
journal = {IEEE Trans. On Semiconductor Manufactureing},
year = 2020,
}
@article{CTT100828639,
author = {Haruki Tanigawa and Kentaro Matsuura and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Enhancement-Mode Accumulation Capacitance-Voltage Characteristics in TiN/ALD-Al2O3/Sputtered-MoS2 Top-Gated Stacks},
journal = {Japanese Journal of Applied Physics (JJAP)},
year = 2020,
}
@article{CTT100828640,
author = {Jinan Song and Lyu Wei Lin and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
title = {Atomic Layer Deposition of Y2O3 Thin Films with a High Growth per Cycle by Ar Multiple Boost Injection},
journal = {Japanese Journal of Applied Physics (JJAP)},
year = 2020,
}
@article{CTT100822932,
author = {Takuya Saraya and Kazuo Itou and Toshihiko Takakura and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Kuniyuki Kakushima and Takuya Hoshii and Kazuo Tsutsui and Hiroshi Iwai and Shin-ichi Nishizawa and Ichiro Omura and Toshiro Hiramoto},
title = {Impact of Structural Parameter Scaling on On-state Voltage in 1200V Scaled IGBTs},
journal = {Japanese Journal of Applied Physics},
year = 2020,
}
@article{CTT100822934,
author = {Tomohiko Yamagishi and Atsushi Hori and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Self-Heating-Aware Cell Design for p/n-Vertically-Integrated Nanowire on FinFET beyond 3-nm Technology Node},
journal = {Japanese Journal of Applied Physics},
year = 2020,
}
@article{CTT100822933,
author = {Joel Molina-Reyes and Takuya Hoshii and Shun-Ichiro Ohmi and Hiroshi Funakubo and Atsushi Hori and Ichiro Fujiwara and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
title = {NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films},
journal = {Japanese Journal of Applied Physics},
year = 2020,
}
@article{CTT100822929,
author = {Kazuo Tsutsui and Yoshitada Morikawa},
title = {Analyses of three-dimensional atomic arrangements of impurities doped in Si relating to electrical activity by spectro-photoelectron holography},
journal = {Japanese Journal of Applied Physics},
year = 2020,
}
@article{CTT100813952,
author = {Kazunori Matsuda and Hiroki Uyama and Kazuo Tsutsui},
title = {Nonlinear Piezoresistance Coefficients of Semiconductors},
journal = {Journal of Applied Physics},
year = 2019,
}
@article{CTT100813951,
author = {Masaya Hamada and Kentaro Matsuura and Takuro Sakamoto and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film using UHV RF Magnetron Sputtering and Sulfurization},
journal = {Journal of the Electron Devices Society (J-EDS)},
year = 2019,
}
@article{CTT100808596,
author = {Takanori Shirokura and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Strong edge-induced ferromagnetism in sputtered MoS2 film treated by post-annealing},
journal = {Applied Physics Letters},
year = 2019,
}
@article{CTT100828638,
author = {Kuan Ning Huang and Yueh-Chin Lin and Jia Ching Lin and Chia Chieh Hsu and Jin Hwa Lee and Chia-Hsun Wu and Jing Neng Yao and Heng-Tung Hsu and Venkatesan Nagarajan and Kuniyuki Kakushima and Kazuo Tsutsui and Hiroshi Iwai and Edward Yi Chang and Chao Hsin Chien},
title = {Study of E-mode AlGaN/GaN MIS-HEMT with La-silicate gate insulator for power applications},
journal = {Journal of Electronic Materials},
year = 2019,
}
@article{CTT100809862,
author = {Takuya Hoshii and Akira Nakajima and Shin-ichi Nishizawa and Hiromichi Ohashi and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and KAZUO TSUTSUI},
title = {Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates},
journal = {Japanese Journal of Applied Physics},
year = 2019,
}
@article{CTT100782443,
author = {K. Matsuura and J. Shimizu and M. Toyama and T. Ohashi and I. Muneta and S. Ishihara and K. Kakushima and K. Tsutsui and A. Ogura and H. Wakabayashi},
title = {Sputter-Deposited-MoS2 nMISFETs with Top-Gate and Al2O3 Passivation under Low Thermal Budget for Large Area Integration},
journal = {IEEE Journal of the Electron Devices Society},
year = 2018,
}
@article{CTT100813953,
author = {Eisuke Anju and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM Layout},
journal = {Journal of the Electron Devices Society (J-EDS)},
year = 2018,
}
@article{CTT100795209,
author = {J. Shimizu and T. Ohashi and K. Matsuura and I. Muneta and K. Kakushima and K. Tsutsui and N. Ikarashi and H. Wakabayashi and N. Ikarashi},
title = {Low-Temperature MoS2 Film Formation using Sputtering and H2S Annealing},
journal = {Journal of the Electron Devices Society},
year = 2018,
}
@article{CTT100780938,
author = {M. Toyama and T. Ohashi and K. Matsuura and J. Shimizu and I. Muneta and K. Kakushima and K. Tsutsui and H. Wakabayashi},
title = {Ohmic Contact between Titanium and Sputtered MoS2 Films achieved by Forming-Gas Annealing},
journal = {JPN J APPL PHYS},
year = 2018,
}
@article{CTT100813955,
author = {Yiming Lei and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Masayuki Furuhashi and Shingo Tomohisa and Satoshi Yamakaw and Kuniyuki Kakushima},
title = {Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing},
journal = {Microelectronics Reliability},
year = 2018,
}
@article{CTT100813954,
author = {Yiming Lei and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Masayuki Furuhashi and Shingo Tomohisa and Satoshi Yamakawa and Kuniyuki Kakushima},
title = {Effect of Lanthanum Silicate Interface Layer on the Electrical Characteristics of 4H-SiC Metal-Oxide-Semiconductor Capacitors},
journal = {Microelectronics Reliability},
year = 2018,
}
@article{CTT100786664,
author = {Akira Nakajima and Shunsuke Kubota and Kazuo Tsutsui and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai and Shin-ichi Nishizawa and Hiromichi Ohashi},
title = {GaN-based CMOS Inverter with Normally-off P- and N-channel MOSFETs in GaN/AlGaN/GaN Platform},
journal = {IET Power Electronics},
year = 2018,
}
@article{CTT100780936,
author = {K. Matsuura and T. Ohashi and I. Muneta and S. Ishihara and K. Kakushima and K. Tsutsui and A. Ogura and H. Wakabayashi},
title = {Low-Carrier-Density Sputter-MoS2 Film by Vapor-Phase Sulfurization},
journal = {Journal of Electrical Materials},
year = 2018,
}
@article{CTT100780937,
author = {N. Hayakawa and Iriya Muneta and Takumi Ohashi and Kenntarou Matsuura and Junnichi Shimizu and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and Hitoshi Wakabayashi},
title = {Reduction of conductance mismatch in Fe/Al2O3/MoS2 system by tunneling-barrier thickness control},
journal = {Japan Journal of Applied Physics},
year = 2018,
}
@article{CTT100786663,
author = {Kazuo Tsutsui and Tomohiro Matsushita and Kotaro Natori and Takayuki Muro and Yoshitada Morikawa and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kouichi Hayashi and Fumihiko Matsui and Toyohiko Kinoshita},
title = {Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography},
journal = {Nano Letters},
year = 2017,
}
@article{CTT100786665,
author = {Yueh Chin Lin and Yu Xiang Huang and Gung Ning Huang and Chia Hsun Wu and Jing Neng Yao and Chung Ming Chu and Shane Chang and Chia Chieh Hsu and Jin Hwa Lee and Kuniyuki Kakushima and Kazuo Tsutsui and Hiroshi Iwai and Edward Yi Chang},
title = {Enhancement-Mode GaN MIS-HEMTs with LaHfOx Gate Insulator for Power Application},
journal = {IEEE Electron Device Letters},
year = 2017,
}
@article{CTT100830482,
author = {"K. Kakushima" and "T. Seki" and "H. Wakabayashi" and "K. Tsutsui" and "H. Iwai"},
title = {Infrared spectroscopic analysis of reactively formed La-silicate interface layer at La2O3/Si substrates},
journal = {Vacuum},
year = 2017,
}
@article{CTT100765856,
author = {Takumi Ohashi and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness},
journal = {Applied Physics Express},
year = 2017,
}
@article{CTT100830080,
author = {"Jun’ichi Shimizu" and "Takumi Ohashi" and "Kentaro Matsuura" and "Iriya Muneta" and "Kuniyuki Kakushima" and "Kazuo Tsutsui" and "Hitoshi Wakabayashi"},
title = {High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for Three-dimensional ICs},
journal = {Japanese Journal of Applied Physics (JJAP)},
year = 2017,
}
@article{CTT100830486,
author = {"R. Miyazawa" and "H. Wakabayashi" and "K. Tsutsui" and "H. Iwai" and "K. Kakushima"},
title = {Photovoltaic Characteristics of Ultra-thin Single Crystalline Silicon Solar Cells},
journal = {International Journal of High Speed Electronics and Systems (IJHSES)},
year = 2016,
}
@article{CTT100830088,
author = {"M.S. Hadi" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "H. Iwai" and "K. Kakushima"},
title = {Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes},
journal = {Microelectronics Reliability},
year = 2016,
}
@article{CTT100830087,
author = {"J. Chen" and "H. Wakabayashi" and "K. Tsutsui" and "H. Iwai" and "K. Kakushima"},
title = {Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current},
journal = {Microelectronic Reliability},
year = 2016,
}
@article{CTT100830495,
author = {"Tomoyuki Suzuki" and "Hitoshi Wakabayashi" and "Kazuo Tsutsui" and "Hiroshi Iwai" and "Kuniyuki Kakushima"},
title = {Laminated Mo/C Electrodes for 4H-SiC Schottky Barrier Diodes with Ideal Characteristics},
journal = {IEEE Electron Device Letters (EDL)},
year = 2016,
}
@article{CTT100786666,
author = {Yusuke Takei and Kazuo Tsutsui and Wataru Saito and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai},
title = {Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high electron mobility transistors},
journal = {Japanese Journal of Applied Physics},
year = 2016,
}
@article{CTT100830094,
author = {"J. Chen" and "T. Kawanago" and "H. Wakabayashi" and "K. Tsutsui" and "H. Iwai" and "D. Nohata" and "H. Nohira" and "K. Kakushima"},
title = {La2O3 gate dielectrics for AlGaN/GaN HEMT},
journal = {Microelectronics Reliability},
year = 2016,
}
@article{CTT100759551,
author = {T. Ohashi and K. Suda and S. Ishihara and N. Sawamoto and S. Yamaguchi and K. Matsuura and K. Kakushima and N. Sugii and A. Nishiyama and Y. Kataoka and K. Natori and K. Tsutsui and H. Iwai and A. Ogura and H. Wakabayashi},
title = {Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs},
journal = {Japan Journal of Applied Physics},
year = 2015,
}
@article{CTT100830498,
author = {"Yusuke Takei" and "Masayuki Kamiya" and "Kazuo Tsutsui" and "Wataru Saito" and "Kuniyuki Kakushima" and "Hitoshi Wakabayashi" and "Yoshinori Kataoka" and "Hiroshi Iwai"},
title = {Reduction of Contact Resistance on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers},
journal = {Physica Status Solidi A},
year = 2015,
}
@article{CTT100830371,
author = {"Mokh Hadi" and "Shinichi Kano" and "Kuniyuki Kakushima" and "Yoshinori Kataoka" and "Akira Nishiyama" and "Nobuyuki Sugii" and "Hitoshi Wakabayashi" and "Kazuo Tsutsui" and "Kenji Natori" and "Hiroshi Iwai"},
title = {A resistive switching device based on breakdown and anodic reoxidization of thin SiO2 on Si-based Electrodes using CeOx buffer layer},
journal = {Semiconductor Science and Technology},
year = 2014,
}
@article{CTT100830372,
author = {"Yusuke Takei" and "Mari Okamoto" and "Wataru Saito" and "Kazuo Tsutsui" and "Kuniyuki Kakushima" and "Hitoshi Wakabayashi" and "Yoshinori Kataoka" and "Hiroshi Iwai"},
title = {Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures},
journal = {ECS Transactions},
year = 2014,
}
@article{CTT100830384,
author = {"Y. Wu" and "H. Hasegawa" and "K. Kakushima" and "K. Ohmori" and "T. Watanabe" and "A. Nishiyama" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "Y. Kataoka" and "K. Natori" and "K. Yamada" and "H. Iwai"},
title = {A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability},
journal = {Microelectronics Reliability},
year = 2014,
}
@article{CTT100830585,
author = {"Chunmeng Dou" and "Tomoya Shoji" and "Kazuhiro Nakajima" and "Kuniyuki Kakushima" and "Parhat Ahmet" and "Yoshinori Kataoka" and "Akira Nishiyama" and "Nobuyuki Sugii" and "Hitoshi Wakabayashi" and "Kazuo Tsutsui" and "Kenji Natori" and "Hiroshi Iwai"},
title = {Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement},
journal = {Microelectronics Reliability},
year = 2014,
}
@article{CTT100830499,
author = {"T. Kawanago" and "K. Kakushima" and "Y. Kataoka" and "A. Nishiyama" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "K. Natori" and "H. Iwai"},
title = {Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT},
journal = {IEEE Transaction on Electron Devices(T-ED)},
year = 2014,
}
@article{CTT100830501,
author = {"K. Tuokedaerhan" and "K. Kakushima" and "Y. Kataoka" and "A. Nishiyama" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "K. Natori" and "H. Iwai"},
title = {Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain},
journal = {Applied Physics Letters (APL)},
year = 2014,
}
@article{CTT100830612,
author = {"K. Tuokedaerhan" and "R. Tan and K. Kakushima" and "P. Ahmet" and "Y. Kataoka" and "A. Nishiyama" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "K. Natori" and "T. Hattori" and "H. Iwai"},
title = {Stacked sputtering process for Ti, Ta, and W carbide formation for gate metal application},
journal = {Applied Physics Letters (APL)},
year = 2013,
}
@article{CTT100830613,
author = {"Keita Takahashi" and "Kazuo Tsutsui"},
title = {Growth of Thin Epitaxial CaxSr1-xF2/SrF2 Layers with Low Leakage Current on Ge Substrates},
journal = {Japanese Journal of Applied Physics (JJAP)},
year = 2013,
}
@article{CTT100658805,
author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and takeo hattori and Kenji Natori and HIROSHI IWAI},
title = {Comparative study of electrical characteristics in(100) and (110)surface-oriented nMOSFETs with direct contact La-silicate/Si interface structure},
journal = {Solid-State Electronics},
year = 2013,
}
@article{CTT100658722,
author = {Y. Wu and 竇春萌 and F. Wei and Kuniyuki KAKUSHIMA and 大毛利健治 and パールハットアヘメト and T. Watanabe and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and Keisaku Yamada and 片岡好則 and takeo hattori and HIROSHI IWAI},
title = {Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability},
journal = {Japanese Journal of Applied Physics},
year = 2013,
}
@article{CTT100658723,
author = {DARYOUSH ZADEH and Hiroshi Oomine and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and Hiroshi Nohira and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode},
journal = {Solid-State Electronics},
year = 2013,
}
@article{CTT100647654,
author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs},
journal = {Solid-State Electronics},
year = 2012,
}
@article{CTT100647652,
author = {マイマイティ マイマイティレャアティ and 久保田透 and 関拓也 and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 片岡好則 and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Oxide and interface trap densities estimation in ultrathin W/ La2O3/Si MOS capacitors},
journal = {Microelectronics Reliability},
year = 2012,
}
@article{CTT100647649,
author = {C. Dou and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer},
journal = {Microelectronics Reliability},
year = 2012,
}
@article{CTT100647591,
author = {マイマイティ マイマイティレャアティ and Miyuki Kouda and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Ahmet Parhat and 片岡好則 and 西山彰 and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Valance number transition and silicate formation of cerrium oxide on Si(100)},
journal = {Vacuum},
year = 2012,
}
@article{CTT100647590,
author = {マイマイティ マイマイティレャアティ and Miyuki Kouda and Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 片岡 好則 and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {The effect of remote Coulomb scattering on electron mobility in La2O3 gate stacked MOSFETs},
journal = {Semiconductor Science and Technology},
year = 2012,
}
@article{CTT100647588,
author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Covalent Nature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal2},
journal = {IEEE ELECTRON DEVICE LETTERS},
year = 2012,
}
@article{CTT100647573,
author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature},
journal = {IEEE Transactions on Electron Devices},
year = 2012,
}
@article{CTT100647574,
author = {Takamasa Kawanago and 鈴木 拓也 and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process},
journal = {Solid-State Electronics},
year = 2012,
}
@article{CTT100647421,
author = {ダリューシュザデ and Takashi Kanda and 山下晃司 and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Capacitance-Voltage Characterization of La2O3 Metal-Oxide-Semiconductor Structures on Ino.53Ga.0.47As Substrate with Different Surface Treatment Methods},
journal = {Japanese Journal of Applied Physics},
year = 2011,
}
@article{CTT100647417,
author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Rare Earth Oxide Capping Effect on La2O3 Gate Dielectrics for Equivalent Oxide Thickness Scaling toward 0.5nm},
journal = {Japanese Journal of Applied Physics},
year = 2011,
}
@article{CTT100647422,
author = {来山大祐 and 久保田透 and Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {[ 183] D. Kitayama, T. Kubota, T. Koyonagi, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai, “Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5nm* Adjustment of Amount of Residual Oxygen Atoms in Metal Layer”, Japanese Journal of Applied Physics, Vol.50, No.10, pp.10PA05-1-5, October, 2011},
journal = {Japanese Journal of Applied Physics},
year = 2011,
}
@article{CTT100626838,
author = {ダリューシュザデ and Kuniyuki KAKUSHIMA and Takashi Kanda and Y.C.Lin and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and E.Y.Chang and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Improving electrical characteristics of W/HfO2/Ino.53Gao.47As gate stacks by altering deposition techniques},
journal = {Microelectronic Engineering},
year = 2011,
}
@article{CTT100626839,
author = {来山大祐 and Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Effect of thin Si insertion at metal gate/high-k interface on electrical characteristics of MOS device with La2 O3},
journal = {Microelectronic Engineering},
year = 2011,
}
@article{CTT100621281,
author = {DARYOUSH ZADEH and Soshi Sato and Kuniyuki KAKUSHIMA and A. Srivastava and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and C.K. Sarkar and HIROSHI IWAI},
title = {Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise},
journal = {Microelectronics Reliability},
year = 2011,
}
@article{CTT100614619,
author = {Kuniyuki KAKUSHIMA and Koichi Okamoto and Tomotsune Koyanagi and Miyuki Kouda and Kiichi Tachi and Takamasa Kawanago and Jaeyeol Song and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
title = {Selection of rare earth silicates for highly scaled gate dielectrics},
journal = {Microelectronic Engineering},
year = 2010,
}
@article{CTT100607472,
author = {Kuniyuki KAKUSHIMA and Kiichi Tachi and M.Adachi and Koichi Okamoto and Soshi Sato and Jaeyeol Song and Takamasa Kawanago and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
title = {Interface and electrical properties of La-silicate for direct contact of high-k with silicon},
journal = {Solid-State Electronics},
year = 2010,
}
@article{CTT100613512,
author = {A. Uedono and KAZUO TSUTSUI and S. Ishibashi and H. Watanabe and S. Kubota and Yasumasa Nakagawa and Bunji Mizuno and takeo hattori and HIROSHI IWAI},
title = {Vacancy-Boron Complexes in Plasama Immersion lon-lmplanted Si Probed by a Monoenergetic Positron Beam},
journal = {Japanese Journal of Applied Physics},
year = 2010,
}
@article{CTT100607487,
author = {A. Uedono and KAZUO TSUTSUI and S. Ishibashi and H. Watanabe and S. Kubota and Y. Nakagawa and Bunji Mizuno and takeo hattori and HIROSHI IWAI},
title = {Vacancy-Boron Complexes in Plasama Immersion lon-lmplanted Si Probed by a Monoenergetic Positron Beam},
journal = {Japanese Journal of Applied Physics},
year = 2010,
}
@article{CTT100607582,
author = {M.K. Bera and Jaeyeol Song and Ahmet Parhat and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
title = {Yttrium-scandium oxide as high-k gate dielectric for germanium metal-oxide-semiconductor devices},
journal = {SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
year = 2010,
}
@article{CTT100604483,
author = {Kuniyuki KAKUSHIMA and Koichi Okamoto and Tomotsune Koyanagi and Miyuki Kouda and Kiichi Tachi and Takamasa Kawanago and Jaeyeol Song and Ahmet Parhat and Hiroshi Nohira and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
title = {SrO capping effect for La2O3/ Ce-Silicate gate dielectrics},
journal = {Microelectronics Reliability 50},
year = 2010,
}
@article{CTT100604479,
author = {Yusuke Kobayashi and Kuniyuki KAKUSHIMA and Ahmet Parhat and V.Rampogal Rao and KAZUO TSUTSUI and HIROSHI IWAI},
title = {Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness},
journal = {Microelectronics Reliability 50},
year = 2010,
}
@article{CTT100607466,
author = {Kuniyuki KAKUSHIMA and Tomotsune Koyanagi and Kiichi Tachi and Jaeyeol Song and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
title = {Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric},
journal = {Solid-State Electronics},
year = 2010,
}
@article{CTT100607464,
author = {Kuniyuki KAKUSHIMA and M. Nakagawa and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
title = {Radio-frequency performance of a sub-100 nm metal-oxide field-effect transistor with high-k gate dielectric},
journal = {Semiconductor Science and Technology},
year = 2010,
}
@article{CTT100599403,
author = {Takao Oshita and Keita Takahashi and Kazuo Tsutsui},
title = {Growthofultra-thinfluorideheterostructuresonGe(111) for quantumdevices},
journal = {Journal of Crystal Growth},
year = 2009,
}
@article{CTT100588545,
author = {Tomotsune Koyanagi and Kiichi Tachi and Koichi Okamoto and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
title = {Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation},
journal = {Japanese Journal of Applied Physics},
year = 2009,
}
@article{CTT100600446,
author = {Kuniyuki KAKUSHIMA and Kiichi Tachi and Jaeyeol Song and Soshi Sato and Hiroshi Nohira and E. Ikenaga and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
title = {Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film},
journal = {JOURNAL OF APPLIED PHYSICS},
year = 2009,
}
@article{CTT100560055,
author = {KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and PARHAT AHMET and HIROSHI IWAI},
title = {Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi2},
journal = {Microelectronic Engineering},
year = 2008,
}
@article{CTT100586827,
author = {Ahmet Parhat and Nakagawa Kentaro and Kuniyuki KAKUSHIMA and Hiroshi Nohira and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
title = {Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack},
journal = {Microelectronics Reliability 48},
year = 2008,
}
@article{CTT100588755,
author = {Ahmet Parhat and 中川健太郎 and Kuniyuki KAKUSHIMA and Hiroshi Nohira and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
title = {Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack},
journal = {Microelectronics Reliability},
year = 2008,
}
@article{CTT100588767,
author = {KAZUO TSUTSUI and T Matsuda and M Watanabe and Cheng-Guo Jin and 佐々木雄一朗 and Bunji Mizuno and E Ikenaga and Kuniyuki KAKUSHIMA and Ahmet Parhat and T Maruizumi and Hiroshi Nohira and takeo hattori and HIROSHI IWAI},
title = {Activated Boron and its Concentration Profiles in Heavily Doped Si Studied by Soft X-ray Photoelectron Spectroscopy and Hall Measurements},
journal = {Journal of Applied Physics},
year = 2008,
}
@article{CTT100588871,
author = {KAZUO TSUTSUI and T. Shiozawa and K. Nagahiro and Y. Ohishi and Kuniyuki KAKUSHIMA and Ahmet Parhat and N. Urushihara and M. Suzuki and HIROSHI IWAI},
title = {Improvement of Thermal Stability of Ni Silicide on N+-Si by Direct Deposition of Group III Element (Al, B) Thin Film at Ni/Si Interface},
journal = {Microelectronic Engineering},
year = 2008,
}
@article{CTT100588880,
author = {KAZUO TSUTSUI and Ruifei Xiang and K. Nagahiro and T. Shiozawa and Ahmet Parhat and Y. Okuno and M. Matsumoto and M. Kubota and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
title = {Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi2},
journal = {Microelectronic Engineering},
year = 2008,
}
@article{CTT100588886,
author = {Reyes Joel Molina and A. Torres and W. Calleja and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
title = {Degradation and breakdown of W-La2O3 stack after annealing in N-2},
journal = {JAPANESE JOURNAL OF APPLIED PHYSICS},
year = 2008,
}
@article{CTT100588896,
author = {N. Urushihara and S. Iida and N. Sanada and M. Suzuki and D.F. Paul and S. Bryan and Y. Nakajima and T. Hanajiri and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and HIROSHI IWAI},
title = {Three dimensional image construction and spectrum extraction from two dimensional elemental mapping in Auger electron spectroscopy},
journal = {JOURNAL OF VACUUM SCIENCE & TECHNOLOGY},
year = 2008,
}
@article{CTT100588982,
author = {Kuniyuki KAKUSHIMA and K. Okamoto and M. Adachi and Kiichi Tachi and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
title = {Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion},
journal = {SOLID-STATE ELECTRONICS},
year = 2008,
}
@article{CTT100544681,
author = {Yusuke Kobayashi and C. Raghunathan Manoj and Kazuo Tsutsui and Venkanarayan Hariharan and Kuniyuki Kakushima and V.Ramgopal Rao and Parhat Ahmet and Hiroshi Iwai},
title = {Parasitic Effects in Multi-Gate MOSFETs},
journal = {IEICE TRANS. ELECTRON},
year = 2007,
}
@article{CTT100599416,
author = {N. S. Sokolov and I. V. Grekhov and S. Ikeda and A. K. Kaveev and A.V. Krupin and K. Saiki and K. Tsutsui and S. E. Tyaginov and M. I. Vexler},
title = {Low-leakage MIS structures with 1.5-6 nm CaF2 insulating layer on Si(111)},
journal = {Microelectronic Engineering},
year = 2007,
}
@article{CTT100586852,
author = {Jaeyeol Song and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
title = {Improvement of interfacial properties with interfacial layer in La2O3 / Ge structure},
journal = {Microelectronic Engineering},
year = 2007,
}
@article{CTT100586853,
author = {Takamasa Kawanago and Kiichi Tachi and Jaeyeol Song and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
title = {Electrical characterization of directly deposited La-Sc oxides complex for gate insulator application},
journal = {Microelectronic Engineering},
year = 2007,
}
@article{CTT100586854,
author = {Soshi Sato and Kiichi Tachi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
title = {Thermal-stability improvement of LaON thin film formed using nitrogen radicals},
journal = {Microelectronic Engineering},
year = 2007,
}
@article{CTT100528773,
author = {Motoki Maeda and Natsuko Matsudo and So Watanabe and Kazuo Tsutsui},
title = {Crystalline structure of epitaxial CaxMg1-xF2 alloys on Si(100) and Si(111) substrates},
journal = {Thin Solid Films},
year = 2006,
}
@article{CTT100528779,
author = {Jin-Aun Ng and Nobuyuki Sugii and Kuniyuki Kakushima and Parhat Ahmet and Kazuo Tsutsui and Takeo Hattori and Hiroshi Iwai},
title = {Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing},
journal = {IEICE Electronics Express},
year = 2006,
}
@article{CTT100528775,
author = {So Watanabe and Tsuyoshi Sugisaki and Yohei Toriumi and Motoki Maeda and Kazuo Tsutsui},
title = {Fabrication of Fluoride Resonant Tunneling Diodes on V-Grooved Si(100) Substrates},
journal = {Jpnese Journal of Applied Physics},
year = 2006,
}
@article{CTT100406530,
author = {So Watanabe and Motoki Maeda and Tsuyoshi Sugisaki and Kazuo Tsutsui},
title = {Fluoride Resonant Tunneling Diodes on Si Substrates Improved by Additional Thermal Oxidation Process},
journal = {Japanese Journal of Applied Physics},
year = 2005,
}
@article{CTT100406529,
author = {Motoki Maeda and Joji Omae and So Watanabe and Yohei Toriumi and Kazuo Tsutsui},
title = {Surface Modification of Si Substrates by CdF2 Molecular Beam for Stable Growth of Fluoride Ultra-Thin Heterostructures},
journal = {Journal of Crystal Growth},
year = 2005,
}
@article{CTT100406528,
author = {Yongshik Kim and Kunihiro Miyauchi and Shun-ichiro Ohmi and Kazuo Tsutsui and Hiroshi Iwai},
title = {Electrical Properties of Vacuum Annealed La2O3 Thin Films grown by E-Beam Evaporation},
journal = {Japanese Journal of Applied Physics},
year = 2005,
}
@article{CTT100542014,
author = {Motoki Maeda and Natsuko Matsudo and So Watanabe and Kazuo Tsutsui},
title = {Growth characteristics of ultra-thin epitaxial CaxMg1-xF2 alloys on Si(111) substrates},
journal = {Journal of Crystal Growth},
year = 2005,
}
@article{CTT100542013,
author = {Kazuo Tsutsui and Ryota Higaki and Yuichiro Sasaki and Takahisa Sato and Hideki Tamura and Katsumi Okashita and Bunji Mizuno and Hiroshi Iwai},
title = {Doping Effects from Neutral B2H6 Gas Phase on Plasma Pretreated Si Substrates as a Possible Process in Plasma Doping},
journal = {Japanese Journal of Applied Physics},
year = 2005,
}
@article{CTT100528759,
author = {Y. Sasaki and C.G. Jin and K. Okashita and H. Tamura and H. Ito and B. Mizuno and H. Sauddin and R. Higaki and T. Satoh and K. Majima and Y. Fukagawa and K. Takagi and I. Aiba and S. Ohmi and K. Tsutsui and H. Iwai},
title = {New method of Plasma doping with in-situ Helium pre-amorphization},
journal = {Nuclear Instruments and Methods in Physics Research B},
year = 2005,
}
@article{CTT100406532,
author = {J. A. Ng and Y. Kuroki and N. Sugii and K. Kakushima and S.-I. Ohmi and K. Tsutsui and T. Hattori and H. Iwai and H. Wong},
title = {Effects of low temperature annealing on the ultrathin La2O3 gate dielectric; comparison of post deposition annealing and post metallization annealing},
journal = {Microelectronic Engineering},
year = 2005,
}
@article{CTT100528766,
author = {C.G. Jin and Y. Sasaki and K. Okashita and H. Tamura and H. Ito and B. Mizuno and K. Tsutsui and S. Ohmi and H. Iwai},
title = {Ultra shallow p+/n junction formation by plasma doping (PD) and long pulse all solid-state laser annealing (ASLA) with selective absorption modulation},
journal = {Nuclear Instruments and Methods in Physics Research B},
year = 2005,
}
@article{CTT100387702,
author = {So Watanabe and Motoki Maeda and Tsuyoshi Sugisaki and Kazuo Tsutsui},
title = {Fluoride Resonant Tunneling Diodes on Si Substrates Improved by the Additional Thermal Oxidation Process},
journal = {Ext. Abs. of Solid Sate Devices and Materials (SSDM)},
year = 2004,
}
@article{CTT100387701,
author = {Motoki MAEDA and Joji OMAE and So WATANABE and Yohei TORIUMI and Kazuo TSUTSUI},
title = {Surface Modification of Si Substrates by CdF2 Molecular Beam for Stable Growth of Fluoride Ultra-Thin Heterostructures},
journal = {Abs. of MBE2004 (2004 Molecular Beam Epitaxy)},
year = 2004,
}
@article{CTT100387705,
author = {Y. Kim and S. Ohmi and K. Tsutsui and H. Iwai},
title = {Electrical Conduction Processes in Lanthana Thin Films prepared by E-Beam Evaporation},
journal = {206th ECS symposium, Proc. Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing},
year = 2004,
}
@article{CTT100387699,
author = {K. Tsutsui and R. Higaki and Y. Sasaki and T. Sato and H. Tamura and B. Mizuno and H. Iwai},
title = {Contribution and control of neutral gas absorption effects in the plasma doping of boron into Si},
journal = {Ext. Abs. of IWJT2004(International Workshop on Junction Technology)},
year = 2004,
}
@article{CTT100387700,
author = {Kazuo Tsutsui and Yuichiro Sasaki and Cheng-Guo Jin and Hideki Tamura and Bunji Mizuno and Ryota Higaki and Tkahisa Sato and Kenta Majima and Shun-ichiro Ohmi and Hiroshi Iwai},
title = {Ultra Shallow p+/n Junctions Fabricated by Plasma Doping and All Solid State Laser Annealing},
journal = {Electrochemical Society Proceedings Advanced Short-Time Thermal Processing for Si- Based CMOS Devices II},
year = 2004,
}
@article{CTT100387706,
author = {Kazuo Tsutsui and Ryota Higaki and Takahisa Sato and Yuichiro Sasaki and Hideki Tamura and Bunji Mizuno and Hiroshi Iwai},
title = {Effects of Substrate Surface Conditions on Dose Controllability of Plasma Doping Process (Invited)},
journal = {Proc. of The 7th Int. Conf. on Solid State and Integrated Circuit Technology (ICSICT2004)},
year = 2004,
}
@article{CTT100387707,
author = {Bunji Mizuno and Yuichiro Sasaki and Cheun-Guo Jin and Hideki Tamura and Katsumi Okashita and Hiroyuki Ito and Kazuo Tsutsui and Hiroshi Iwai},
title = {Plasma Doping (Invited)},
journal = {Proc. of The 7th Int. Conf. on Solid State and Integrated Circuit Technology (ICSICT2004)},
year = 2004,
}
@article{CTT100387710,
author = {Y. Sasaki and C. G. Jin and H. Tamura and B. Mizuno and R. Higaki and T. Satoh and K. Majima and H. Sauddin and K. Takagi and S. Ohmi and K. Tsutsui and H. Iwai },
title = {B2H6 Plasma Doping with In-situ He Pre-amorphization},
journal = {Tech. Dig. of Symp. on VLSI Technology},
year = 2004,
}
@article{CTT100387714,
author = {渡邉聡 and 杉崎剛 and 前田元輝 and 筒井一生},
title = {弗化物共鳴トンネルダイオードにおける酸化効果を用いたCaF2バリア層の絶縁性向上},
journal = {第65回応用物理学会学術連合講演会予稿集},
year = 2004,
}
@article{CTT100387715,
author = {前田元輝 and 松土夏子 and 渡邉聡 and 筒井一生},
title = {CaxMg1-xF2混晶薄膜のSi(111)基板上へのエピタキシャル成長},
journal = {第65回応用物理学会学術連合講演会予稿集},
year = 2004,
}
@article{CTT100387716,
author = {鳥海陽平 and 齋藤格広 and 渡邉聡 and 前田元輝 and 筒井一生},
title = {弗化物3重障壁共鳴トンネルダイオードにおける混晶井戸の有効性},
journal = {第65回応用物理学会学術連合講演会予稿集},
year = 2004,
}
@article{CTT100387704,
author = {Yongshik Kim and Shun-ichiro Ohmi and Kazuo Tsutsui and Hiroshi Iwai},
title = {Space-Charge-Limited Current Conductions in La2O3 Thin Films Deposited by E-Beam Evaporation after Low Temperature Dry-Nitrogen Annealing},
journal = {Proc. of 34^th^ Europian Solid-State Device Research Conference (ESSDERC2004)},
year = 2004,
}
@article{CTT100387703,
author = {Takahisa Sato and Ryota Higaki and Hideki Tamura and Yuichiro Sasaki and Bunji Mizuno and Kazuo Tsutsui and Hiroshi Iwai},
title = {Effects of Wet Cleaning Treatment on Dose of Impurity after Plasma Doping},
journal = {Proc. of 34^th^ Europian Solid-State Device Research Conference (ESSDERC2004},
year = 2004,
}
@article{CTT100387697,
author = {Shun-ichiro Ohmi and Hiroyuki Yamamoto and Junichi Taguchi and Kazuo Tsutsui and Hiroshi Iwai},
title = {Effects of post dielectric deposition and post metallization annealing processes on metal/Dy2O3/Si(100) diode characteristics},
journal = {Jpn. J. Appl. Phys.},
year = 2004,
}
@article{CTT100387730,
author = {中川健太郎 and 宮内邦裕 and 筒井一生 and 岩井洋},
title = {高誘電率希土類酸化物の積層構造に関する研究},
journal = {第65回応用物理学会学術連合講演会予稿集},
year = 2004,
}
@article{CTT100387698,
author = {C.G.Jin and Y. Sasaki and K. Tsutsui and S. Ohmi and B. Mizuno and H. Iwai},
title = {Estimation of Ultra-Shallow Plasma Doping(PD) Layerﾕs Optical Absorption Properties by Spectroscopic Ellipsometry (SE)},
journal = {Ext. Abs. of IWJT2004 (International Workshop on Junction Technology) },
year = 2004,
}
@article{CTT100387729,
author = {吉崎智史 and 吉田丈治 and 大見俊一郎 and 筒井一生 and 岩井洋},
title = {La2O3をゲート絶縁膜に用いたMISFETの低周波ノイズのアニール温度依存性},
journal = {第65回応用物理学会学術連合講演会予稿集},
year = 2004,
}
@article{CTT100387728,
author = {福山享 and 金容 and 大見俊一郎 and 筒井一生 and 岩井洋},
title = {高誘電率La2O3薄膜におけるリーク電流機構の解析},
journal = {第65回応用物理学会学術連合講演会予稿集},
year = 2004,
}
@article{CTT100387723,
author = {黒木裕介 and 黄仁安 and 栗山篤 and 大見俊一郎 and 筒井一生 and 岩井洋},
title = {La2O3をゲート絶縁膜に用いたMISFETにおけるポストメタライゼーションアニールの効果に関する検討},
journal = {第65回応用物理学会学術連合講演会予稿集},
year = 2004,
}
@article{CTT100387722,
author = {モリナ・レイエスホエル and 栗山篤 and 筒井一生 and 岩井洋},
title = {希土類酸化物薄膜におけるポストメタルアニールに関する検討(2)},
journal = {第65回応用物理学会学術連合講演会予稿集},
year = 2004,
}
@article{CTT100387721,
author = {眞嶋健太 and 深川洋太郎 and 田村秀貴 and 岡下勝己 and 佐々木雄一朗 and 水野文二 and 筒井一生 and 岩井洋},
title = {プラズマドーピング法で形成した極浅p+n接合のホール測定},
journal = {第65回応用物理学会学術連合講演会予稿集},
year = 2004,
}
@article{CTT100387720,
author = {相庭一穂 and 佐藤貴久 and 佐々木雄一朗 and 筒井一生 and 水野文二 and 岩井洋},
title = {プラズマドーピング後の基板洗浄によるドーズ変化},
journal = {第65回応用物理学会学術連合講演会予稿集},
year = 2004,
}
@article{CTT100387719,
author = {高木克洋 and 佐藤貴久 and 田村秀貴 and 岡下勝己 and 筒井一生 and 佐々木雄一朗 and 水野文二 and 岩井洋},
title = {プラズマドーピングにおけるHeプラズマ前処理の不純物プロファイルへの効果},
journal = {第65回応用物理学会学術連合講演会予稿集},
year = 2004,
}
@article{CTT100387718,
author = {岡下勝己 and 佐々木雄一朗 and 金成国 and 田村秀貴 and 水野文二 and 筒井一生 and 岩井洋},
title = {極浅接合形成のためのプラズマ照射プレアモルファス化},
journal = {第65回応用物理学会学術連合講演会予稿集},
year = 2004,
}
@article{CTT100387717,
author = {大前譲治 and 前田元輝 and 筒井一生},
title = {CdF2分子線により表面改質したSi(111)基板上への弗化物共鳴トンネルダイオードの製作},
journal = {第65回応用物理学会学術連合講演会予稿集},
year = 2004,
}
@article{CTT100494304,
author = {佐々木雄一朗 and 水野文二 and 赤間貞洋 and 檜垣良太 and 大見俊一郎 and 筒井一生 and 岡下勝己 and 前嶋聡 and 吉川住和 and 中山一郎 and 岩井洋},
title = {プラズマドーピング法におけるH等の深さ分布プロファイルの挙動とコンタミの検討},
journal = {第50回応用物理関係連合講演会予稿集},
year = 2003,
}
@article{CTT100494275,
author = {長井利明 and 田中敦之 and 筒井一生 and 川崎宏治 and 青柳克信},
title = {電子ビームと水素ラジカルの併用によるCaF2表面改質と金属ドットの選択堆積},
journal = {第50回応用物理関係連合講演会予稿集},
year = 2003,
}
@article{CTT100494274,
author = {檜垣良太 and 筒井一生 and 佐々木雄一朗 and 水野文二 and 吉川住和 and 大見俊一郎 and 岩井洋},
title = {プラズマ前処理を用いたガスドーピングにおける基板表面状態の影響},
journal = {第64回応用物理学会学術連合講演会予稿集},
year = 2003,
}
@article{CTT100494303,
author = {赤間貞洋 and 檜垣良太 and 筒井一生 and 佐々木雄一朗 and 水野文二 and 吉川住和 and 大見俊一郎 and 岩井洋},
title = {室温ガスドーピングの表面反応機構},
journal = {第50回応用物理関係連合講演会予稿集},
year = 2003,
}
@article{CTT100494277,
author = {前田元輝 and 渡邉聡 and 筒井一生},
title = {Cd-richCaxCd1-xF2混晶超薄膜のSi(111)基板上における成長安定化機構},
journal = {第50回応用物理関係連合講演会予稿集},
year = 2003,
}
@article{CTT100494302,
author = {檜垣良太 and 赤間貞洋 and 筒井一生 and 佐々木雄一朗 and 水野文二 and 吉川住和 and 大見俊一郎 and 岩井洋},
title = {室温ガスドーピング法におけるドーズ量の制御},
journal = {第50回応用物理関係連合講演会予稿集},
year = 2003,
}
@article{CTT100493964,
author = {渡邉聡 and 前田元輝 and 筒井一生},
title = {弗化物混晶系ヘテロ構造を用いたシリコン基板上への共鳴トンネルダイオード},
journal = {電子情報通信学会技術研究報告},
year = 2003,
}
@article{CTT100494272,
author = {前田元輝 and 渡邉聡 and 筒井一生},
title = {Cd-rich CaxCd1-xF2混晶を量子井戸層に用いた共鳴トンネルダイオードの電気特性評価},
journal = {第64回応用物理学会学術連合講演会予稿集},
year = 2003,
}
@article{CTT100494273,
author = {佐藤貴久 and 檜垣良太 and 筒井一生 and 佐々木雄一郎 and 田村秀樹 and 金成国 and 水野文二 and 大見俊一郎 and 岩井洋},
title = {プラズマドーピング前後のHF洗浄とドーズ量の変化},
journal = {第64回応用物理学会学術連合講演会予稿集},
year = 2003,
}
@article{CTT100493962,
author = {Motoki Maeda and So Watanabe and Kazuo Tsutsui},
title = {Evaluation of Variable Energy Level of Conduction Band Edge on Fluoride Resonant Tunneling Diodes},
journal = {Japanese Journal of Applied Physics},
year = 2003,
}
@article{CTT100494276,
author = {渡邉聡 and 前田元輝 and 筒井一生},
title = {弗化物共鳴トンネルダイオードの特性におけるバイアス履歴依存現象の解明},
journal = {第50回応用物理関係連合講演会予稿集},
year = 2003,
}
@article{CTT100537924,
author = {Motoki Maeda and So Watanabe and Kazuo Tsutsui},
title = {Heteroepitaxy of Cd-rich CaxCd1-xF2 Alloy on Si Substrates and Its Application to Resonant Tunneling Diodes},
journal = {Japanese Journal of Applied Physics},
year = 2003,
}
@article{CTT100477747,
author = {Hiroshi Kambayashi and Takuji Gotoh and Hiroshi Maeda and Kazuo Tsutsui},
title = {Growth Characteristics of CaxCd1-xF2 Films on Si Substrates Using CaF2 Buffer Layer},
journal = {Journal of Crystal Growth},
year = 2002,
}
@article{CTT100478624,
author = {渡邉聡 and 前田元輝 and 筒井一生},
title = {弗化物ヘテロ共鳴トンネルダイオードにおけるバリアハイト制御},
journal = {第63回応用物理学会学術講演会予稿集},
year = 2002,
}
@article{CTT100478625,
author = {前田元輝 and 渡邉聡 and 筒井一生},
title = {Cd-rich CaxCd1-xF2混晶超薄膜のSi(111)基板上へのエピタキシャル成長特性},
journal = {第63回応用物理学会学術講演会予稿集},
year = 2002,
}
@article{CTT100478621,
author = {檜垣良太 and 赤間貞洋 and 大見俊一郎 and 筒井一生 and 佐々木雄一朗 and 水野文二 and 岩井洋},
title = {プラズマドーピングとプラズマ前処理を用いたガスドーピング},
journal = {第63回応用物理学会学術講演会},
year = 2002,
}
@article{CTT100478620,
author = {長井利明 and 田中敦之 and 筒井一生 and 川崎宏治 and 青柳克信},
title = {CaF2薄膜の電子ビーム表面改質における水素ラジカル併用効果},
journal = {第63回応用物理学会学術講演会予稿集},
year = 2002,
}
@article{CTT100478619,
author = {川崎宏治 and 金井大 and 平山秀樹 and 筒井一生 and 青柳克信},
title = {選択成長法により形成した縦型GaN/AlN量子ドットを用いた単一電子素子の作製},
journal = {第49回応用物理学関係連合講演会予稿集},
year = 2002,
}
@article{CTT100478618,
author = {金井大 and 川崎宏治 and 平山秀樹 and 筒井一生 and 青柳克信},
title = {GaN量子ドットを用いた単一電子トランジスタの高温動作},
journal = {第49回応用物理学関係連合講演会予稿集},
year = 2002,
}
@article{CTT100478615,
author = {今福周作 and 筒井一生},
title = {希薄酸素雰囲気中での電子線照射によるCaF2薄膜の表面改質},
journal = {第49回応用物理学関係連合講演会予稿集},
year = 2002,
}
@article{CTT100478613,
author = {高屋浩二 and 長井利明 and 筒井一生 and 川崎宏治 and 青柳克信},
title = {自己整合的手法による金属結合量子ドット構造の形成},
journal = {第49回応用物理学関係連合講演会予稿集},
year = 2002,
}
@article{CTT100478544,
author = {渡邉聡 and 神林宏 and 関根広志 and 筒井一生},
title = {Si基板上の活性層埋め込み型弗化物共鳴トンネルダイオードの製作},
journal = {第49回応用物理学関係連合講演会予稿集},
year = 2002,
}
@article{CTT100478503,
author = {前田元輝 and 神林宏 and 筒井一生},
title = {Cd-rich CaxCd1-xF2混晶のSi(111)基板上へのエピタキシャル成長},
journal = {第49回応用物理学関係連合講演会予稿集},
year = 2002,
}
@article{CTT100477742,
author = {Koji Kawasaki and Ikuo Nakamura and Hideki Hirayama and Kauo Tsutsui and Yoshinobu Aoyagi},
title = {Formation of GaN nanopillars by selective area growth using ammonia gas source molecular beam epitaxy},
journal = {Journal of Crystal Growth},
year = 2002,
}
@article{CTT100476966,
author = {寺山俊明 and 関根広志 and 筒井一生},
title = {弗化物共鳴トンネルダイオードとSi-MOSFETの混載集積},
journal = {電子情報通信学会技術研究報告},
year = 2002,
}
@article{CTT100538439,
author = {Toshiaki Terayama and Hiroshi Sekine and Kazuo Tsutsui},
title = {Fluoride Resonant Tunneling Diodes Co-Integrated with Si-MOSFETs},
journal = {Japanese Journal of Applied Physics},
year = 2002,
}
@article{CTT100460555,
author = {神林宏 and 前田寛 and 筒井一生},
title = {Si基板上のエピタキシャルCaCdF2混晶層の電気的特性},
journal = {第62回応用物理学会学術講演会予稿集},
year = 2001,
}
@article{CTT100461400,
author = {Toshimitsu Kobori and Kazuo Tsutsui},
title = {Molecular-beam epitaxy of conductive CdF2 films on Si substrates by simultaneous Cd exposure},
journal = {Applied Physics Letters},
year = 2001,
}
@article{CTT100476965,
author = {Koji Kawasaki and Daisuke Yamazaki and Atsuhiro Kinoshita and Hideki Hirayama and Kazuo Tsutsui and Yoshinobu Aoyagi},
title = {GaN quantum-dot formation by self-assembling droplet epitaxy and application to single-electron transistors},
journal = {Applied Physics Letters},
year = 2001,
}
@article{CTT100461397,
author = {Koji Kawasaki and Daisuke Yamazaki and Atsuhiro Kinoshita and Hideki Hirayama and Kazuo Tsutsui and Yoshinobu Aoyagi},
title = {GaN quantum-dot formation by self-assembling droplet epitaxy and application to single-electron transistors},
journal = {Applied Physics Letters},
year = 2001,
}
@article{CTT100461003,
author = {山田聡 and 平林文人 and 筒井一生},
title = {エピタキシャル弗化物上への位置制御された金属極微細構造の選択形成},
journal = {電子情報通信学会技術研究報告},
year = 2001,
}
@article{CTT100461399,
author = {Kazuo Tsutsui and Toshiaki Terayama and Hiroshi Sekine },
title = {Fluoride-Si Resonant Tunneling Diodes Co-integrated with Si-MOSFETs},
journal = {電子情報通信学会技術研究報告},
year = 2001,
}
@article{CTT100460550,
author = {Patrick Le Maitre and 寺山俊明 and 筒井一生},
title = {Simulation of static memory operation usig co-integration of fluoride-based resonant tunneling diodes and Si-MOSFET},
journal = {第48回応用物理学関係連合講演会予稿集},
year = 2001,
}
@article{CTT100460551,
author = {山田聡 and 今福周作 and 高屋浩二 and 筒井一生 and 川崎宏治 and 青柳克信},
title = {電子ビーム位置制御法におけるCaF2再成長プロセスの検討},
journal = {第48回応用物理学関係連合講演会予稿集},
year = 2001,
}
@article{CTT100460552,
author = {平林文人 and 高屋浩二 and 今福周作 and 筒井一生 and 川崎宏治 and 青柳克信},
title = {電子ビーム位置制御法による金属微細構造の形成におけるGaとAlの比較},
journal = {第48回応用物理学関係連合講演会予稿集},
year = 2001,
}
@article{CTT100460553,
author = {今福周作 and 筒井一生},
title = {電子線照射によるCaF2表面の改質効果を利用したGaの選択堆積},
journal = {第62回応用物理学会学術講演会予稿集},
year = 2001,
}
@article{CTT100460554,
author = {関根広志 and 寺山俊明 and 筒井一生},
title = {CdF2/CaF2共鳴トンネルダイオードとSi-MOSFETの混載回路の製作},
journal = {第62回応用物理学会学術講演会予稿集},
year = 2001,
}
@article{CTT100444638,
author = {KAZUO TSUTSUI},
title = {High-density-speed optical near-field recording-reading with a pyramidal silicon probe on a contact slider},
journal = {Optics Letters},
year = 2000,
}
@article{CTT100444647,
author = {筒井一生},
title = {突起型シリコンプローブアレイによる超高密度・超高速近接場光記録・再生},
journal = {第47回応用物理学関係連合講演会予稿集},
year = 2000,
}
@article{CTT100444650,
author = {寺山俊明 and 熊谷史裕 and 筒井一生},
title = {高濃度イオン注入層上CdF2/CaF2共鳴トンネルダイオードの作製},
journal = {第61回応用物理学会学術講演会予稿集},
year = 2000,
}
@article{CTT100444651,
author = {筒井一生},
title = {自然形成GaNドットを用いた単電子トランジスタの製作},
journal = {第61回応用物理学会学術講演会予稿集},
year = 2000,
}
@article{CTT100444652,
author = {筒井一生},
title = {電子ビーム位置制御液滴エピタキシー法によるGaNドットの近接配置},
journal = {第61回応用物理学会学術講演会予稿集},
year = 2000,
}
@article{CTT100444648,
author = {平林文人 and 山田聡 and 望月麻理恵 and 筒井一生 and 川崎宏治 and 青柳克信},
title = {電子ビーム位置制御法によるAl細線およびドット構造の作製},
journal = {第61回応用物理学会学術講演会予稿集},
year = 2000,
}
@article{CTT100458098,
author = {Takuji Gotoh and Hiroshi Kambayashi and Kazuo Tsutsui},
title = {Epitaxial Growth of CaxCd1-xF2 Mixed Crystal Films on Si Substrates},
journal = {Jpn. J. Appl. Phys.},
year = 2000,
}
@article{CTT100444639,
author = {Takuji Gotoh and Hiroshi Kambayashi and Kazuo Tsutsui},
title = {Epitaxial Growth of CaxCd1-xF2 Mixed Crystal Films on Si Substrates},
journal = {Jpn. J. Appl. Phys.},
year = 2000,
}
@article{CTT100444649,
author = {神林宏 and 寺山俊明 and 筒井一生},
title = {Si基板上へのCaCdF2混晶のエピタキシャル成長(2) -CaF2バッファ層の効果-},
journal = {第61回応用物理学会学術講演会予稿集},
year = 2000,
}
@article{CTT100444646,
author = {筒井一生},
title = {液滴エピタキシー法により自然形成されたGaN量子ドットの光学特性},
journal = {第47回応用物理学関係連合講演会予稿集},
year = 2000,
}
@article{CTT100444645,
author = {筒井一生},
title = {電子ビーム位置制御液滴エピタキシー法によるGaN量子ドットアレイの形成},
journal = {第47回応用物理学関係連合講演会予稿集},
year = 2000,
}
@article{CTT100444644,
author = {山田聡 and 望月麻理恵 and 平林文人 and 筒井一生},
title = {電子ビーム位置制御法によるGaドットアレイの形成 -CaF2再成長による清浄・高選択プロセス-},
journal = {第47回応用物理学関係連合講演会予稿集},
year = 2000,
}
@article{CTT100444643,
author = {熊谷史裕 and 寺山俊明 and 筒井一生},
title = {Si基板上へのCdF2/CaF2共鳴トンネル構造の成長における基板方位オフ角依存性},
journal = {第47回応用物理学関係連合講演会予稿集},
year = 2000,
}
@article{CTT100444642,
author = {後藤卓司 and 神林宏 and 筒井一生},
title = {Si基板上へのCaCdF2混晶層のエピタキシャル成長},
journal = {第47回応用物理学関係連合講演会予稿集},
year = 2000,
}
@article{CTT100444640,
author = {望月麻理恵 and 山田聡 and 平林文人 and 筒井一生},
title = {電子ビーム位置制御法によるナノドットアレイ},
journal = {電子情報通信学会技術研究報告},
year = 2000,
}
@article{CTT100431651,
author = {望月麻理恵 and 日村敦義 and 川崎宏治 and 筒井一生},
title = {電子ビーム位置制御法によるCaF2上への高密度Gaドットアレイの形成とその機構},
journal = {第60回応用物理学会学術講演会予稿集},
year = 1999,
}
@article{CTT100427247,
author = {M. B. Lee and N. Atoda and K. Tsutsui and M. Ohtsu},
title = {Nanometric aperture arrays fabricated by wet and dry etching of silicon for near-field optical storage application},
journal = {J. Vac. Sci. and Technol. B},
year = 1999,
}
@article{CTT100431654,
author = {筒井一生},
title = {超高密度・超高速光記録用光近接場スライダーの製作},
journal = {第60回応用物理学会学術講演会予稿集},
year = 1999,
}
@article{CTT100431653,
author = {筒井一生},
title = {液滴エピタキシー法により形成されるGaNドットの集束電子ビームによる位置制御},
journal = {第60回応用物理学会学術講演会予稿集},
year = 1999,
}
@article{CTT100431652,
author = {筒井一生},
title = {液滴エピタキシー法によるGaN量子ドットの自然形成},
journal = {第60回応用物理学会学術講演会予稿集},
year = 1999,
}
@article{CTT100431650,
author = {M. Mochizuki and A. Himura and K. Kawasaki and K. Tsutsui},
title = {High density Ga droplet arrays on CaF2 surface site-controlled by electron-beam exposure},
journal = {第18回電子材料シンポジウム（EMS-18）レコード},
year = 1999,
}
@article{CTT100431649,
author = {日村敦義 and 望月麻理恵 and 川崎宏治 and 筒井一生},
title = {電子ビーム位置制御法によるCaF2上へのGaナノドットアレイの高密度形成},
journal = {第46回応用物理学関係連合講演会予稿集},
year = 1999,
}
@article{CTT100431648,
author = {松原智樹 and 川崎宏治 and 望月麻理恵 and 筒井一生},
title = {CaF2のステップエッジ上に自然形成させた金属多重トンネル接合を用いた単電子デバイス},
journal = {第46回応用物理学関係連合講演会予稿集},
year = 1999,
}
@article{CTT100431647,
author = {川崎宏治 and 筒井一生},
title = {二次元島形成法によりCaF2/Si(111)基板上に成長させたGaAsの表面モフォロジー},
journal = {第46回応用物理学関係連合講演会予稿集},
year = 1999,
}
@article{CTT100427253,
author = {K. Kawasaki and M. Mochizuki and K. Tsutsui},
title = {Single electron devices formed by self-ordering metal nano-doroplet arrays on epitaxial CaF2 film},
journal = {Jpn. J. Appl. Phys.},
year = 1999,
}
@article{CTT100427250,
author = {K. Kawasaki and K. Tsutsui},
title = {Effects of the two-step growth method for GaAs on CaF2/Si(111) with the electron beam surface modification technique},
journal = {Jpn. J. Appl. Phys.},
year = 1999,
}
@article{CTT100427249,
author = {KAZUO TSUTSUI},
title = {Silicon planar-apertured probe array for high-density near-field optical storage},
journal = {Applied Optics},
year = 1999,
}
@article{CTT100427246,
author = {KAZUO TSUTSUI},
title = {Subwavelength-sized phase-change recording with a silicon planar apertured probe},
journal = {Proc. of SPIE, Near-Field Optics: Physics, Devices, and Information Processing},
year = 1999,
}
@article{CTT100427248,
author = {K. Tsutsui and K. Kawasaki and M. Mochizuki and T. Matsubara},
title = {Site controlled metal and semiconductor quantum dots on epitaxial fluoride films},
journal = {Microelectronic Engineering},
year = 1999,
}
@article{CTT100427254,
author = {M. M. Sarinanto and Y. Yamaguchi and K. Tsutsui},
title = {Study of thin ZnSe buffer layer for growth of GaAs on CaF2/Si(111) heterosutructure},
journal = {Thin Solid Films},
year = 1998,
}
@article{CTT100427252,
author = {KAZUO TSUTSUI},
title = {Enhancing throughput over 100 times by a triple-tapered structure for nea-field optical fiber probe},
journal = {Proc. of SPIE; Far- and Near-Field Optics: Physics and Information Processing},
year = 1998,
}
@article{CTT100427251,
author = {KAZUO TSUTSUI},
title = {Near field optics and its application to optical memory},
journal = {Electronics and Communications in Japan, Part2},
year = 1998,
}
@article{CTT100420667,
author = {KAZUO TSUTSUI},
title = {Multitunneling junction of metal droplets formed on CaF┣D22┫D2 step edges in a self-assembling manner},
journal = {Japanese Journal of Applied Physics},
year = 1998,
}
@article{CTT100427258,
author = {M. M. Sarinanto and K. Tsutsui},
title = {Epitaxial growth of SrF2 on ZnSe(100) epitaxial films},
journal = {Jpn. J. Appl. Phys.},
year = 1998,
}
@article{CTT100427257,
author = {A. Izumi and K. Tsutsui and N. S. Sokolov},
title = {Heteroepitaxial growth of CdF2 layers on CaF2/Si(111) by molecular beam epitaxy},
journal = {Jpn. J. Appl. Phys.},
year = 1998,
}
@article{CTT100427256,
author = {筒井一生},
title = {近接場光学とその光メモリへの応用},
journal = {電子情報通信学会論文誌},
year = 1998,
}
@article{CTT100427255,
author = {K. Kawasaki and K. Tsutsui},
title = {Surface free energy modification of CaF2 by atomic-height island formation on heteroepitaxy of GaAs on CaF2},
journal = {Applied Surface Science},
year = 1998,
}
@article{CTT100420668,
author = {KAZUO TSUTSUI},
title = {ZnSe ionicity control layer inserted in GaAs/CaF┣D22┫D2(111)interface},
journal = {Applied Surface Science},
year = 1997,
}
@article{CTT100420669,
author = {KAZUO TSUTSUI},
title = {Artificial control of dot sites for Ga droplet arrays on CaF┣D22┫D2 films by surface steps and electron beam modifications},
journal = {Japanese Journal of Applied Physics},
year = 1997,
}
@article{CTT100420670,
author = {A. Izumi and N. Matsubara and Y. Kushida and K. Tsutsui},
title = {CdF┣D22┫D2/CaF┣D22┫D2 resonant tunneling diode fabricated on Si(111)},
journal = {Japanese Journal of Applied Physics},
year = 1997,
}
@article{CTT100420671,
author = {KAZUO TSUTSUI},
title = {Fabrication of site-controlled metal dot array by electron beam surface modification},
journal = {Microelectronic Engineering},
year = 1997,
}
@article{CTT100427259,
author = {A. Izumi and N. Matsubara and Y. Kushida and K. Tsutsui},
title = {CdF2/CaF2 resonant tunneling diode fabricated on Si(111)},
journal = {Jpn. J. Appl. Phys.},
year = 1997,
}
@article{CTT100420672,
author = {KAZUO TSUTSUI},
title = {Effects of electron beam exposure conditions on the surface modification of CaF┣D22┫D2(111) for heteroepitaxy of GaAs/CaF┣D22┫D2 structure},
journal = {Japanese Journal of Applied Physics},
year = 1996,
}
@article{CTT100427260,
author = {A. Izumi and T. Hirai and K. Tsutsui and N.S. Sokolov},
title = {Study of band offsets in CdF2/CaF2/Si(111) heterostructure using X-ray photoelectron spectroscopy},
journal = {Appl. Phys. Lett.},
year = 1995,
}
@article{CTT100420673,
author = {KAZUO TSUTSUI},
title = {Study of band offsets in CdF┣D22┫D2/CaF┣D22┫D2/Si(111)heterostructure using X-ray photoelectron spectroscopy},
journal = {Applied Physics Letters},
year = 1995,
}
@article{CTT100420674,
author = {KAZUO TSUTSUI},
title = {High quality CdF┣D22┫D2 layer growth on CaF┣D22┫D2/Si(111)},
journal = {Journal of Crystal Growth},
year = 1995,
}
@article{CTT100420675,
author = {KAZUO TSUTSUI},
title = {Study of Epitaxial Growth of Rotational-Twin-Free CaF┣D22┫D2 Films on Si(111)},
journal = {Japanese Journal of Applied Physics},
year = 1994,
}
@article{CTT100420676,
author = {KAZUO TSUTSUI},
title = {Controlling the Profile of Nanostructure},
journal = {Journal of Vaccum Science and Technology},
year = 1993,
}
@inproceedings{CTT100903419,
author = {今井 慎也 and 梶川 亮介 and 川那子 高暢 and 宗田 伊理也 and 角嶋 邦之 and 辰巳 哲也 and 冨谷 茂隆 and 筒井 一生 and 若林 整},
title = {スパッタMoS2膜に対するエッジ金属コンタクトの電流電圧特性},
booktitle = {},
year = 2023,
}
@inproceedings{CTT100902988,
author = {Ryosuke Kajikawa and Takamasa Kawanago and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Self-Aligned WOx S/D Contacts to Gate Stacks with TiOx Nucleation Layer by Multiple-Deposition Method in WSe2 pFETs},
booktitle = {},
year = 2023,
}
@inproceedings{CTT100903418,
author = {梶川 亮介 and 川那子 高暢 and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
title = {トップゲートに自己整合したWOx S/Dを用いた30-50 nm膜厚WSe2バックチャネルpFET},
booktitle = {},
year = 2023,
}
@inproceedings{CTT100886128,
author = {Iriya Muneta and Takanori Shirokura and Pham Nam Hai and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulfide atomic layered structure},
booktitle = {},
year = 2023,
}
@inproceedings{CTT100896541,
author = {Ryo Ono and Shinya Imai and Takamasa Kawanago and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
title = {Improvement of MoS2 Film Quality by Solid-Phase Crystallization from PVD Amorphous MoSx Film},
booktitle = {},
year = 2023,
}
@inproceedings{CTT100896554,
author = {濱田 昌也 and 松浦 賢太朗 and 濱田 拓也 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
title = {ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact},
booktitle = {},
year = 2023,
}
@inproceedings{CTT100896540,
author = {Shinya Imai and Ryo Ono and Iriya Muneta and Kuniyuki Kakushima and Tetsuya Tatsumi and Shigetaka Tomiya and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Grain-Size Enlargement of MoS2 Film by Low-Rate Sputtering with Molybdenum Grid},
booktitle = {},
year = 2023,
}
@inproceedings{CTT100896555,
author = {Peilong Wang and Atsushi Hori and Iriya Muneta and Takamasa Kawanago and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Self-heating and Short-Channel Effect Immunity with Partial-Bottom-Dielectric-Isolation for Gate-All-Around Nano-Sheet FETs},
booktitle = {},
year = 2023,
}
@inproceedings{CTT100905149,
author = {Shonosuke Kimura and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kazuo Tsutsui},
title = {Performance Improvements of P-channel GaN HFETs by Atomic Layer Etching using Nitrogen Plasma},
booktitle = {},
year = 2022,
}
@inproceedings{CTT100879798,
author = {宗田 伊理也 and 白倉 孝典 and ファム ナムハイ and 角嶋 邦之 and 筒井 一生 and 若林 整},
title = {強磁性を示す二次元多結晶層状物質MoS2における非対称線形磁気抵抗},
booktitle = {},
year = 2022,
}
@inproceedings{CTT100896550,
author = {立松 真一 and 濱田 昌也 and 濱田 拓也 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
title = {アニール処理によるWS2-Niエッジコンタクト特性の向上},
booktitle = {},
year = 2022,
}
@inproceedings{CTT100896549,
author = {川那子 高暢 and 梶川 亮介 and 水谷 一翔 and Tsai Sung Lin and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
title = {アルミニウムスカンジウム合金(AlSc)と酸化タングステン(WOx)をソース/ドレイン電極に用いたWSe2 n/p FETとCMOSインバータ応用},
booktitle = {},
year = 2022,
}
@inproceedings{CTT100896548,
author = {小野 凌 and 今井 慎也 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
title = {微結晶MoS2膜への硫黄雰囲気アニールによる結晶性向上},
booktitle = {},
year = 2022,
}
@inproceedings{CTT100896547,
author = {今井 慎也 and 小野 凌 and 宗田 伊理也 and 角嶋 邦之 and 辰巳 哲也 and 冨谷 茂隆 and 筒井 一生 and 若林 整},
title = {MoS2膜質のスパッタ成膜レート依存性調査},
booktitle = {},
year = 2022,
}
@inproceedings{CTT100896546,
author = {水谷 一翔 and 星井 拓也 and 川那子 高暢 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
title = {希土類酸化物キャッピングによるY:HfO2キャパシタの信頼性改善},
booktitle = {},
year = 2022,
}
@inproceedings{CTT100881317,
author = {宗田 伊理也 and 白倉 孝典 and PHAM NAM HAI and 角嶋 邦之 and 筒井 一生 and 若林 整},
title = {Ferromagnetism and current control of magnetoresistance in two-dimensional polycrystalline MoS2},
booktitle = {},
year = 2022,
}
@inproceedings{CTT100875814,
author = {阿野 響太郎 and 星井 拓也 and 若林 整 and 筒井 一生 and 依田 孝 and 角嶋 邦之},
title = {ゲート付きSiC pnダイオードの電気特性評価},
booktitle = {},
year = 2022,
}
@inproceedings{CTT100867380,
author = {宗田 伊理也 and 白倉 孝典 and ファム ナム ハイ and 角嶋 邦之 and 筒井 一生 and 若林 整},
title = {二次元多結晶二硫化モリブデン原子層状膜における超低電流強磁性変調},
booktitle = {},
year = 2022,
}
@inproceedings{CTT100877154,
author = {Kazuto Mizutani and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
title = {Recovery of ferroelectric property after endurance test by positive reset voltage application for CeOx-capped ferroelectric HfO2 films},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100877155,
author = {R. Shibukawa and S. -L. Tsai and T. Hoshii and H. Wakbayashi and K. Tsutsui and K. Kakushima},
title = {Thermal stability of ferroelectric AlScN films},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100877156,
author = {Sho Sasaki and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
title = {Observation of ferroelectricity in atomic layer deposited AlN film},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100877153,
author = {Mitsuki Nishizawa and T. Hoshii and H. Wakabayashi and K. Tsutsui and I. Mizushima and T. Yoda and K. Kakushima},
title = {Introduction of surface field-plate for accurate minority carrier lifetime estimation of 4H-SiC epitaxial layer},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100877152,
author = {Si-Meng Chen and Sung-Lin Tsai and Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
title = {GaN HEMTs with self-upward-polarized AlScN gate dielectrics toward E-mode operation},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100877149,
author = {Ryo Ono and Shinya Imai and Yuta Kusama and Takuya Hamada and Masaya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Nobuyuki Ikarashi and Hitoshi Wakabayashi},
title = {Growth Mechanism of PVD MoS2 Film from Sub-Monolayer Region},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100902941,
author = {Takamasa Kawanago and Takahiro Matsuzaki and Ryosuke Kajikawa and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Experimental Demonstration of High-Gain CMOS Inverter at Low Vdd Down to 0.5 V Consisting of WSe2 n/p FETs},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100877147,
author = {Takuya Hamada and Taiga Horiguchi and Masaya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
title = {Grain Size Enlargement in 2D WS2 Film with Low-Power RF-Magnetron Sputtering},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100875832,
author = {小森 勇太 and 木村 安希 and 星井 拓也 and 宮野 清孝 and 津久井 雅之 and 水島 一郎 and 依田 孝 and 角嶋 邦之 and 若林 整 and 筒井 一生},
title = {InAlN/AlN/GaN構造におけるキャリア散乱要因のAlN層厚依存性},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100875829,
author = {小森 勇太 and 星井 拓也 and 宮野 清孝 and 津久井 雅之 and 水島 一郎 and 依田 孝 and 角嶋 邦之 and 若林 整 and 筒井 一生},
title = {InAlN/AlN/GaN構造中2DEGにおける移動度のキャリア濃度依存性},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100877142,
author = {Masaya Hamada and Takuya Hamada and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Side-Contact Architecture for p/n-Stacked-Nano-Sheet ZrS2 2D-FETs Beyond 1-nm Technology Node},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100861332,
author = {Masahiro Watanabe and Naoyuki Shigyo and Takuya Hoshii and Kazuyoshi Furukawa and Kuniyuki Kakushima and Katsumi Satoh and Tomoko Matsudai and Takuya Saraya and Iriya Muneta and Hitoshi Wakabayashi and Akira Nakajima and Shin-ichi Nishizawa and Kazuo Tsutsui and Toshiro Hiramoto and Hiromichi Ohashi and Hiroshi Iwai},
title = {Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices},
booktitle = {Proceedings of the 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021)},
year = 2021,
}
@inproceedings{CTT100848916,
author = {竹内走一郎 and 古賀峻丞 and 田中晶貴 and 孫澤旭 and 橋本由介 and 星井拓也 and 筒井一生 and 松下智裕},
title = {AsおよびBを共ドープしたSi結晶中に存在するドーパントの構造解析},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100848915,
author = {筒井一生 and 濱田拓也 and 高山 研 and 金 相佑 and 星井拓也 and 角嶋邦之 and 若林 整 and 高橋言緒 and 井手利英 and 清水三聡},
title = {選択成長法を用いたGaN 系FinFET},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100855930,
author = {Takuya Saraya and Kazuo Ito and Toshihiko Takakura and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Masanori Tsukuda and Katsumi Satoh and Tomoko Matsudai and Kuniyuki Kakushima and Takuya Hoshii and Kazuo Tsutsui and Hiroshi Iwai and Atsushi Ogura and Wataru Saito and Shin-ichi Nishizawa and Ichiro Omura and Hiromichi Ohashi and Toshiro Hiramoto},
title = {3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100855929,
author = {H. Nishida and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
title = {A simulation study on the transient leakage current analysis of a GaN epitaxial layer},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100855928,
author = {"Atsuhiro Ohta and J. Song and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima"},
title = {Electrical Characteristics of Atomic Layer Deposited Y-silicate Dielectrics},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100855927,
author = {A. Miyata and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
title = {Photocurrent measurements of AlGaN/GaN HEMT under X-ray irradiation},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100855926,
author = {"Kazuto Mizutani and Yu-Wei Lin and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima"},
title = {Observation of wake-up effect on ferroelectric Y:HfO2 thickness scaling},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100855925,
author = {Y.-W. Lin and K. Mizutani and T. Hoshii and H. Wakabayashi and K. Tsutsui and Y.-F. Tsao and T.-J. Huang and H.-T. Hsu and K. Kakushima},
title = {Ferroelectric HfO2 Capacitors for Varctor Application in GHz},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100855924,
author = {S. Tsai and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
title = {Highly Oriented Growth of AlxSc1-xN Ferroelectric Film on W Bottom Electrodes},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100848911,
author = {筒井 一生 and 松橋 泰平 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 永山 勉 and 樋口 隆弘 and 加藤 慎一 and 谷村 英昭 and 室 隆桂之 and 松下 智裕 and 森川 良忠},
title = {AsおよびBの共ドープによるSi中Asクラスターの特性制御},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100855934,
author = {Sunglin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
title = {Thickness Scaling on Ferroelectric Al0.8Sc0.2N Films},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100855937,
author = {Shinya Imai and Takuya Hamada and Masaya Hamada and Takanori Shirokura and Shigetaka Tomiya and Iriya Muneta and Kuniyuki Kakushima and Tetsuya Tatsumi and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Importance of MoS2-Compound Sputtering even with Sulfur-Vapor Anneal for Chip-Size Fabrication},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100848904,
author = {久恒 悠介 and 金 相佑 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 筒井 一生},
title = {横型GaN FinFETの構造最適化についての検討},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100848914,
author = {松田 和典 and 生田 壮馬 and 中谷 友哉 and 長岡 史郎 and 筒井 一生},
title = {Geのピエゾ抵抗効果（㈵）},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100848913,
author = {木村 安希 and 星井 拓也 and 宮野 清孝 and 津久井 雅之 and 水島 一郎 and 依田 孝 and 角嶋 邦之 and 若林 整 and 筒井 一生},
title = {InAlN/(AlN)/GaN構造におけるキャリア移動度の温度依存性},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100848912,
author = {門 龍翔 and 横川 凌 and 沼沢 陽一郎 and 筒井 一生 and 角嶋 邦之 and 小椋 厚志},
title = {Si-IGBT作製プロセスにおける水素熱処理の影響},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100848908,
author = {高山 研 and 太田 貴士 and 佐々木 満孝 and 向井 勇人 and 濱田 拓也 and 高橋 言雄 and 井出 利英 and 清水 三聡 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 筒井 一生},
title = {選択成長法を用いたGaN FinFETの作製:リーク電流抑制の改良},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100855932,
author = {Masaya Hamada and Kentaro Matsuura and Takuya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {ZrS2 Ambipolar FETs with Schottky Barrier to Near-Midgap TiN Contact Controlled by Top Gate TiN/Al2O3 Stack},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100855933,
author = {Satoshi Igarashi and Yusuke Mochiduki and Haruki Tanigawa and Masaya Hamada and Kentaro Matsuura and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Low Contact Resistance at Interface between Sputtered-MoS2 Film and TiSi2 Contact Treated by Higher-Temperature Forming-Gas Annealing},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100829204,
author = {木村 安希 and 星井 拓也 and 宮野 清孝 and 布上 真也 and 名古 肇 and 水島 一郎 and 依田 孝 and 角嶋 邦之 and 若林 整 and 筒井 一生},
title = {InAlN/GaNヘテロ構造におけるキャリア輸送特性のAlNスペーサ層膜厚依存性},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100829203,
author = {松橋 泰平 and 星井 拓也 and 沖田 寛昌 and 中島 昭 and 角嶋 邦之 and 若林 整 and 筒井 一生},
title = {分極接合基板における2DEG枯渇電圧の解析的導出},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100829205,
author = {松浦 賢太朗 and 濱田 昌也 and 濱田 拓也 and 谷川 晴紀 and 坂本 拓朗 and 堀 敦 and 宗田 伊理也 and 川那子 高暢 and 角嶋 邦之 and 筒井 一生 and 小椋 厚志 and 若林 整},
title = {大面積集積化に向けたスパッタ堆積ノーマリーオフMoS2-nMISFETs},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100813991,
author = {K. Tsutsui and K. Natori and T. Ogawa and T. Muro and T. Matsuishita and Y. Morikawa and T. Hoshii and K. Kakushima and H. Wakabayashi and K. Hayashi and F. Matsui and T. Kinoshita},
title = {Analyses of 3D Atomic Arrangements of Dopants in Si Crystal Using Spectro-photoelectron Holography},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100813992,
author = {Takuya Hamada and Shinpei Yamaguchi and Taiga Horiguchi and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Comparative and Systematic Study of Doping Technology for 2D -Sputtered SputteredSputtered MoS 2 Film},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100813989,
author = {Takuya Hoshii and Hiromasa Okita and Taihei Matsuhashi and Indraneel Sanyal and Yu-Chih Chen and Ying-Hao Ju and Akira Nakajima and Kuniyuki Kakushima and Hitoshi Wakabayashi and Jen-Inn Chyi and Kazuo Tsutsui},
title = {Evaluation of Interfacial Charges at GaN/AlGaN Interfaces Grown by MOVPE},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100813990,
author = {Kazuo Tsutsui and Tomohiro Matsushita and Takayuki Muro and Yoshitada Morikawa and Kotaro Natori and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kouichi Hayashi and Fumihiko Matsui and Toyohiko Kinoshita},
title = {3D Atomic Imaging of As Doped in Si by Spectro-Photoelectron Holography},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100833081,
author = {渡辺正裕 and 執行直之 and 星井拓也 and 古川和由 and 角嶋邦之 and 佐藤克己 and 末代知子 and 更屋拓哉 and 高倉俊彦 and 伊藤一夫 and 福井宗利 and 鈴木慎一 and 竹内 潔 and 宗田伊里也 and 若林 整 and 中島 昭 and 西澤伸一 and 筒井一生 and 平本俊郎 and 大橋弘通 and 岩井洋},
title = {トレンチゲート型Si-IGBTの3次元精密TCADシミュレーション},
booktitle = {電子情報通信学会技術研究報告 = IEICE technical report : 信学技報},
year = 2019,
}
@inproceedings{CTT100813986,
author = {H. Tanigawa and K. Matsuura and I. Muneta and T. Hoshii and K. Kakushima and K. Tsutsui and H. Wakabayashi},
title = {Positive Threshold Voltage in Accumulation Capacitance of TiN-Top-Gate/High-k/Sputtered-MoS2 Stacks},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100813987,
author = {Jinhan Song and A. Ohta and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
title = {Electrical Characteristics of Atomic Layer Deposited Y-silicate Devices},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100813988,
author = {Y. W. Lin and J. Song and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
title = {Pulse deposition of Y2O3 films by Y(iPrCp)3 assisted by Ar boost technology},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100813985,
author = {T. Kinoshita and T. Matsushita and T. Muro and T. Ohkochi and H. Osawa and K. Hayashi and F. Matsui and K.Tsutsui and K. Natori and Y. Morikawa and T. Hoshii and K. Kakushima and H. Wakabayashi and A. Takeda and K. Terashima and W. Hosoda and T. Fukura and Y. Yano and H. Fujiwara and M. Sunagawa and H. Kato and T. Oguchi and T. Wakita and Y. Muraoka and T. Yokoya},
title = {Status of Photoelectron Holography at SPring-8: Experimental Setup for Time- and Space-Resolved Technique and Application to Individual Atomic Imaging of Multiple Dopant Sites},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100813981,
author = {T. Hiramoto and T. Saraya and K. Itou and T. Takakura and M. Fukui and S. Suzuki and K. Takeuchi and M. Tsukuda and Y. Numasawa and K. Satoh and T. Matsudai and W. Saito and K. Kakushima and T. Hoshii and K. Furukawa and M. Watanabe and N. Shigyo and H. Wakabayashi and K. Tsutsui and H. Iwai and A. Ogura and S. Nishizawa and I. Omura and H. Ohash},
title = {Switching of 3300V Scaled IGBT by 5V Gate Drive},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100829206,
author = {Yuki Kanazawa and Yohei Fukumoto and Syouichi Uechi and Kenji Ohoyama and Naohisa Happo and Masahide Harada and Kenichi Oikawa and Yasuhiro Inamura and Kazuo Tsutsui and Kouichi Hayashi},
title = {Quantitative investigation of local structure of heavy doped Si by neutron atomic resolution holography},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100829183,
author = {高山 研 and 向井 勇人 and 濱田 拓也 and 高橋 言緒 and 井手 利英 and 清水 三総 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
title = {GaN Fin構造選択成長における低抵抗領域の発生原因の検討},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100829202,
author = {沖田 寛昌 and 星井 拓也 and 松橋 泰平 and Sanyal Indraneel and Chen Yu-Chih and Ju Ying-Hao and 中島 昭 and 西澤 伸一 and 大橋 弘通 and 角嶋 邦之 and 若林 整 and Chyi Jen-Inn and 筒井 一生},
title = {TEGを用いたAlGaN/GaNヘテロ成長の2DEG側界面電荷への影響},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100813983,
author = {T. Saraya and K. Itou and T. Takakura and M. Fukui and S. Suzuki and K. Takeuchi and K. Kakushima and T. Hoshii and K. Tsutsui and H. Iwai and S. Nshizawa and I. Omura and T. Hiramoto},
title = {Impact of Structural Parameter Scaling on On-state Voltage in 1200V Scaled IGBTs},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100813982,
author = {Tomohiko Yamagishi and Atsushi Hori and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Self-Heating-Aware Cell Design for Multi-Stacked Circuits with p/n-Vertically-Integrated Nanowires on FinFET},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100813980,
author = {Joel Molina-Reyes and Takuya Hoshii and Shun-Ichiro Ohmi and Hiroshi Funakubo and Atsushi Hori and Ichiro Fujiwara and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
title = {Endurance Improvement in Ferroelectric Y-doped HfO2 Thin Films on NiSi2 with Low-Thermal Budget Processing},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100804206,
author = {Takanori Shirokura and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Edge induced ferromagnetism in sputtered MoS2 film controlled by annealing},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100829168,
author = {宋 ジンハン and 太田 惇丈 and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
title = {Y2O3/SiO2積層構造の絶縁膜を用いたMOS capacitorの特性評価},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100829169,
author = {山岸 朋彦 and 堀 敦 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
title = {横型p/n積層ナノワイヤによるNORとNANDセルの省面積設計},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100829170,
author = {草深 一樹 and Sunglin Tsai and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
title = {スパッタリングによって形成したAlScN膜のリーク電流の評価},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100829171,
author = {太田 惇丈 and 宋 禛漢 and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
title = {原子層堆積法を用いたイットリウムシリケート薄膜の形成},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100829172,
author = {西田 宗史 and 星井 拓也 and 片岡 寛明 and 筒井 一生 and 角嶋 邦之 and 若林 整},
title = {ステップ電圧印加時の過渡電流測定によるGaN中のトラップ密度評価},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100829173,
author = {宮田 篤希 and 齋藤 大樹 and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
title = {4H-SiCエピタキシャル層によるX線検出に関する検討},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100829174,
author = {神林 郁哉 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 筒井 一生},
title = {Si(111)基板上GaNのためのMgF2バッファの検討},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100829175,
author = {蔡 松霖 and 草深 一樹 and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
title = {スパッタリングを用いたAlScN膜の形成},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100829176,
author = {濱田 昌也 and 松浦 賢太朗 and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
title = {スパッタ法と硫黄雰囲気アニールで成膜した高いホール効果移動度を持つ層状ZrS2膜},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100829177,
author = {堀口 大河 and 濱田 拓也 and 辰巳 哲也 and 冨谷 茂隆 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
title = {スパッタMoS2膜のSF6プラズマ処理によるシート抵抗低減},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100829178,
author = {木村 安希 and 久永 真之佑 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
title = {部分的に薄層化したAlGaN 層によるAlGaN/GaN コンタクト抵抗低減効果の薄層領域パターン依存性},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100829179,
author = {谷川 晴紀 and 松浦 賢太朗 and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
title = {正の閾値電圧のMetal-Top-Gate/High-k/スパッタMoS2の蓄積容量特性},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100829180,
author = {五十嵐 智 and 望月 祐輔 and 谷川 晴紀 and 濱田 昌也 and 松浦 賢太朗 and 角嶋 邦之 and 筒井 一生 and 若林 整},
title = {スパッタMoS2膜とTiSi2膜の界面におけるFGアニールによるコンタクト抵抗低減},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100829181,
author = {今井 慎也 and 濱田 昌也 and 五十嵐 智 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
title = {硫化プロセスにおけるスパッタMoS2膜質向上の重要性},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100829182,
author = {松橋 泰平 and 星井 拓也 and 沖田 寛昌 and Indraneel Sanyal and Yu-Chih Chen and Ying-Hao Ju and 中島 昭 and 角嶋 邦之 and 若林 整 and Jen-Inn Chyi and 筒井 一生},
title = {TEGを用いたGaN/AlGaNヘテロ成長の2DHG側界面電荷への影響},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100829201,
author = {濱田 拓也 and 堀口 大河 and 辰巳 哲也 and 冨谷 茂隆 and 濱田 昌也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
title = {スパッタMoS2膜のCl2プラズマ処理によるシート抵抗低減},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100829184,
author = {向井 勇人 and 髙山 研 and 濱田 拓也 and 高橋 言緒 and 井手 利英 and 清水 三聡 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
title = {選択成長法を用いたGaN FinFETの作製},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100829200,
author = {井上 毅哉 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
title = {シリコン縦型パワーデバイスへのひずみ導入によるオン抵抗低減の研究},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100811298,
author = {更屋 拓哉 and 伊藤 一夫 and 高倉 俊彦 and 福井 宗利 and 鈴木 慎一 and 竹内 潔 and 附田 正則 and 沼沢 陽一郎 and 佐藤 克己 and 末代 知子 and 齋藤 渉 and 角嶋邦之 and 星井 拓也 and 古川 和由 and 渡辺正裕 and 執行 直之 and 筒井一生 and 岩井洋 and 小椋 厚志 and 西澤 伸一 and 大村 一郎 and 大橋 弘通 and 平本 俊郎},
title = {5Vゲート駆動1200V級スケーリングIGBTの動作実証とスイッチング損失の低減 (シリコン材料・デバイス)},
booktitle = {電子情報通信学会技術研究報告 = IEICE technical report : 信学技報},
year = 2019,
}
@inproceedings{CTT100813979,
author = {Takuya Hoshii and Akira Nakajima and Shin-ichi Nishizawa and Hiromichi Ohashi and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kazuo Tsutsui},
title = {Quantitative evaluation of interfacial charges at GaN/AlGaN interfaces},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100813978,
author = {K. Matsuura and M. Hamada and T. Hamada and H. Tanigawa and T. Sakamoto and W. Cao and K. Parto and A. Hori and I. Muneta and T. Kawanago and K. Kakushima and K. Tsutsui and A. Ogura and K. Banerjee and H. Wakabayashi},
title = {Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100822935,
author = {星井 拓也 and 中島 昭 and 西澤 伸一 and 大橋 弘通 and 角嶋 邦之 and 若林 整 and 筒井 一生},
title = {分極接合基板におけるAlGaN/GaNヘテロ界面の欠陥電荷評価},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100814076,
author = {Iriya Muneta and Naoki Hayakawa and Takanori Shirokura and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Ferromagnetic tunnel devices with two-dimensional layered material MoS2},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100813977,
author = {Tomohiro Matsushita and Takayuki Muro and Kazuo Tsutsui and Takayoshi Yokoya},
title = {Three-dimensional dopant imaging in semiconductor crystals using photoelectron holography with chemical state identification},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100809866,
author = {筒井一生 and 松下 智裕 and 名取 鼓太郞 and 小川 達博 and 室 隆桂之 and 森川 良忠 and 星井 拓也 and 角嶋邦之 and 若林整 and 林 好一 and 松井 文彦 and 木下 豊彦},
title = {光電子ホログラフィー法によるシリコン中に高濃度ドープされた活性および不活性な不純物原子の三次元原子配列構造の観測},
booktitle = {電子情報通信学会技術研究報告 = IEICE technical report : 信学技報},
year = 2019,
}
@inproceedings{CTT100813975,
author = {K. Hisatsune and T. Hoshii and I. Muneta and H. Wakabayashi and K. Tsutsui and K. Kakushima},
title = {Thickness Effects on Charge and Discharge Characteristics of CeOx MIM Capacitors},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100813976,
author = {K. Sasaki and J. Song and T. Hoshii and H. Wakabayashi and K. Tsutsui and I. Mizushima and T. Yoda and K. Kakushima},
title = {Minority Carrier Lifetime Extraction Methodology of SiC Epitaxial Layer},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100813972,
author = {Masahiro Watanabe and Naoyuki Shigyo and Takuya Hoshii and Kazuyoshi Furukawa and Kuniyuki Kakushima and Katsumi Satoh and Tomoko Matsudai and Takuya Saraya and Toshihiro Takakura and Kazuo Itou and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Iriya Muneta and Hitoshi Wakabayashi and Akira Nakajima and Shin-ichi Nishizawa and Kazuo Tsutsui and Toshiro Hiramoto and Hiromichi Ohashi and Hiroshi Iwai},
title = {Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100813973,
author = {Takuya Saraya and Kazuo Itou and Toshihiko Takakura and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Masanori Tsukuda and Yohichiroh Numasawa and Katsumi Satoh and Tomoko Matsudai and Wataru Saito and Kuniyuki Kakushima and Takuya Hoshii and Kazuyoshi Furukawa and Masahiro Watanabe and Naoyuki Shigyo and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Atsushi Ogura and Shin-Ichi Nishizawa and Ichiro Omura and Hiromichi Ohashi and Toshiro Hiramo},
title = {3300V Scaled IGBTs Driven by 5V Gate Voltag},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100813984,
author = {M. Fukui and T. Saraya and K. Itou and T. Takakura and S. Suzuki and K. Takeuchi and K. Kakushima and T. Hoshii and K. Tsutsui and H. Iwai and S. Nishizawa and I. Omura and T. Hiramoto},
title = {Turn-Off Loss Improvement by IGBT Scaling},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100813974,
author = {J. Molina and H. Iwatsuka and T. Hoshii and S. Ohmi and H. Funakubo and A. Hori and I. Fujiwara and H. Wakabayashi and K. Tsutsui and K. Kakushima},
title = {Ferroelectric Properties of Si doped HfO2 Thin Films with NiSi2 as Bottom Electrode},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100816748,
author = {濱田 拓也 and 向井 勇人 and 高橋 言緒 and 井手 利英 and 清水 三聡 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
title = {FinFET応用に向けた選択成長GaNチャネルの電気特性},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100813970,
author = {Masaya Hamada and Kentaro Matsuura and Takuro Sakamoto and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {High Hall-Effect Mobility of Atomic-Layered Polycrystalline-ZrS2 Film using Sputtering and Sulfur Annealing},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100813971,
author = {Takeya Inoue and Takuya Hoshii and Takuo Kikuchi and Hidehiko Yabuhara and Kazuyuki Ito and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai and Junichi Tonotani and Kazuo Tsutsui},
title = {Fundamental study on reducing on-resistance by introducing strain into silicon vertical power devices},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100816750,
author = {筒井 一生 and 松下 智裕 and 名取 鼓太郞 and 小川 達博 and 室 隆桂之 and 森川 良忠 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 林 好一 and 松井 文彦 and 木下 豊彦},
title = {光電子ホログラフィーによる半導体中の不純物の3Ｄ原子イメージング},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100816749,
author = {松浦 賢太朗 and 濱田 昌也 and 坂本 拓朗 and 谷川 晴紀 and 宗田 伊理也 and 石原 聖也 and 角嶋 邦之 and 筒井 一生 and 小椋 厚志 and 若林 整},
title = {F.G.アニールによるMoSi2/スパッタMoS2界面コンタクト抵抗低減},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100816747,
author = {筒井 一生 and 松下 智裕 and 名取 鼓太郞 and 室 隆桂之 and 森川 良忠 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 林 好一 and 松井 文彦 and 木下 豊彦},
title = {光電子分光ホログラフィーによるAsドープSi中のドーパント複数サイトの原子配列イメージング},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100816745,
author = {筒井一生 and 松下智裕 and 室隆桂之 and 森川良忠 and 名取鼓太郎 and 小川達博 and 星井拓也 and 角嶋邦之 and 若林整 and 林好一 and 松井文彦 and 木下豊彦},
title = {光電子ホログラフィー法によるシリコン中にドープされた不純物の三次元原子配列構造の解析},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100816746,
author = {松浦賢太朗 and 清水淳一 and 外山真矢人 and 大橋匠 and 坂本拓朗 and 宗田伊理也 and 石原聖也 and 角嶋邦之 and 筒井一生 and 小椋厚志 and 若林整},
title = {大面積集積化に向けたスパッタ二次元半導体 MoS2 薄膜のTop-gate nMISFETs チャネル応用},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100792973,
author = {Takanori Shirokura and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Magnetic property in sputtered MoS2 thin film on growth temperature},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100813969,
author = {T. Saraya and K. Itou and T. Takakura and M. Fukui and S. Suzuki and K. Takeuchi and M. Tsukuda and Y. Numasawa and K. Satoh and T. Matsudai and W. Saito and K. Kakushima and T. Hoshii and K. Furukawa and M. Watanabe and N. Shigyo and K. Tsutsui and H. Iwai and A. Ogura and S. Nishizawa and I. Omura and H. Ohashi and T. Hiramoto},
title = {Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100880842,
author = {K. Sasaki and J. Song and T. Hoshii and H. Wakabayashi and K. Tsutsui and I. Mizushima and T. Yoda and K. Kakushima},
title = {Minority Carrier Lifetime Measurement for SiC Epitaxial Layer},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100786671,
author = {Takuya Hamada and Hayato Mukai and Tokio Takahashi and Toshihide Ide and Mitsuaki Shimizu and Hiroki Kuroiwa and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai and Kazuo Tsutsui},
title = {Electrical properties of selectively grown GaN channel for FinFETs},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100786672,
author = {Takuya Hoshii and Shuma Tsuruta and Akira Nakajima and Shin-ichi Nishizawa and Hiromichi Ohashi and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kazuo Tsutsui},
title = {Performance Prediction of Scaled p-channel GaN MOSFET on Polarization Junction Platform},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100795212,
author = {M. Hamada and K. Matsuura and T. Sakamoto and H. Tanigawa and T. Ohashi and I. Muneta and T. Hoshii and K. Kakushima and K. Tsutsui and H. Wakabayashi},
title = {Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Vapor Phase Sulfurization through Al2O3 Passivation Film},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100795211,
author = {T. Sakamoto and T. Ohashi and K. Matsuura and I. Muneta and K. Kakushima and K. Tsutsui and Y. Suzuki and N. Ikarashi and H. Wakabayashi},
title = {Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100813966,
author = {Toyohiko Kinoshita and Tomohiro Matsushita and Takayuki Muro and Takuo Ohkochi and Hitoshi Osawa and Kouichi Hayashi and Fumihiko Matsui and Kazuo Tsutsui and Kotaro Natori and Yoshitada Morikawa and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Aya Taked and Kensei Terashim and Wataru Hosoda and Tetsuji Fukura and Yuukou Yano and Hirohkazu Fujiwara and Masanori Sunagawa and Hiromitsu Kato and Tamio Oguchi and Takanori Wakita and Yuuji Muraoka and Takayoshi Yokoya},
title = {Status of photoelectron holography at SPring-8:Experimental setup for time- and space-resolved technique and application to individual atomic imaging of multiple dopant sites},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100813967,
author = {Tomohiro Matsushita and Takayuki Muro and Toyohiko Kinoshita and Fumihiko Matsui and Hiroshi Daimon and Naohisa Happo and Sinya Hosokokawa and Kenji Ohoyama and Kazuo Tsutsui and Takayoshi Yokoya and Kouichi Hayashi},
title = {Three-dimensional atomic imaging of dopants using atomic resolution holography},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100786670,
author = {Kazuo Tsutsui and Tomohiro Matsushita and Takayuki Muro and Yoshitada Morikawa and Kotaro Natori and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kouichi Hayashi and Fumihiko Matsui and Toyohiko Kinoshita},
title = {Atomic Sites of Dopants in Si Visualized by Spectro-Photoelectron Holography},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100792974,
author = {Takanori Shirokura and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Growth temperature dependence of magnetic property of sputtered MoS2 thin film},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100816744,
author = {松浦 賢太朗 and 清水 淳一 and 外山 真矢人 and 大橋 匠 and 宗田 伊理也 and 石原 聖也 and 角嶋 邦之 and 筒井 一生 and 小椋 厚志 and 若林 整},
title = {大面積集積化に向けたスパッタMoS2薄膜を用いたTop-Gate nMISFETs},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100816743,
author = {小川 達博 and 名取 鼓太郎 and 星井 拓也 and 仲武 昌史 and 渡辺 義夫 and 永山 勉 and 樋口 隆弘 and 加藤 慎一 and 谷村 英昭 and 角嶋 邦之 and 若林 整 and 筒井 一生},
title = {フラッシュランプアニールおよびポストアニールで活性/不活性化したSi中Asの軟X線光電子分光による評価},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100816742,
author = {谷川 晴紀 and 松浦 賢太朗 and 濱田 昌也 and 坂本 拓朗 and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
title = {スパッタMoS2膜の HfO2膜越し硫化における表面残留硫黄除去},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100816741,
author = {向井 勇人 and 濱田 拓也 and 高橋 言緒 and 井出 利英 and 清水 三聡 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
title = {立体チャネルトランジスタ応用に向けた選択成長GaNの異方性エッチング},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100816740,
author = {五十嵐 智 and 松浦 賢太朗 and 濱田 昌也 and 谷川 晴紀 and 坂本 拓朗 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
title = {保護膜を通したフォーミングガスアニールによるスパッタMoS2 膜の結晶性改善},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100816739,
author = {佐々木 杏民 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
title = {n型SiCのエピタキシャル層の正孔ライフタイムがpnダイオード特性に与える影響},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100816738,
author = {佐々 康平 and 久恒 和也 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
title = {酸化セリウムを挿入したMIMキャパシタの充放電特性},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100816737,
author = {岩塚 春樹 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
title = {Siを導入したHfO2のMIMキャパシタの容量特性},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100816736,
author = {久永 真之佑 and 渡部 拓巳 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
title = {凹凸AlGaN層導入によるAlGaN/GaN HEMT構造のコンタクト抵抗低減手法におけるドットアレイ状平面パターンのサイズ効果},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100816735,
author = {鶴田 脩真 and 星井 拓也 and 中島 昭 and 西澤 伸一 and 大橋 弘通 and 角嶋 邦之 and 若林 整 and 筒井 一生},
title = {AlGaN/GaN 界面準位が分極接合基板上 p-MOSFET の電流特性に与える影響},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100816734,
author = {清水 孝 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
title = {TMAHによる表面処理のp型GaN/金属コンタクト特性への影響},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100816733,
author = {井上 毅哉 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
title = {シリコン縦型パワーデバイスへのひずみ導入によるオン抵抗低減の基礎的検討},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100816732,
author = {久恒 和也 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
title = {CeOxを挿入したMIMキャパシタの静電容量の過渡応答特性},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100816731,
author = {神林 郁哉 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 筒井 一生},
title = {Si(111)基板上に成長したInAs極薄膜のラマン分光法による歪み評価},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100813965,
author = {Takuya Hoshii and Kazuyoshi Furukawa and Kuniyuki Kakushima and Masahiro Watanabe and Naoyuki Shigyo and Takuya Saraya and Toshihiko Takakura and Kazuo Itou and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Iriya Muneta and Hitoshi Wakabayashi and Sinichi Nishizawa and Kazuo Tsutsui and Toshiro Hiramoto and Hiromichi Ohashi and Hiroshi Iwai},
title = {Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100813968,
author = {Kazuya Hisatsune and Yoshihisa Takaku and Kohei Sasa and Takuya Hoshii and Iriya Muneta and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
title = {Charge and Discharge Characteristics of On-chip CeOx Electric Double Layer Decoupling Capacitors},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100814262,
author = {I. Muneta and Danial B. Z. and N. Hayakawa and K. Kakushima and K. Tsutsui and H. Wakabayashi},
title = {Magnetic Force Microscopy Image Measured on MoS2 Thin Film Sputtered on CaF2 (111) Substrate},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100816730,
author = {濱田拓也 and 向井勇人 and 高橋言緒 and 井手利英 and 清水三聡 and 星井拓也 and 角嶋邦之 and 若林整 and 岩井洋 and 筒井一生},
title = {FinFET応用に向けた選択成長GaNチャネルの電気特性},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100813959,
author = {K. Kakushima and T. Hoshii and M. Watanabe and N. Shigyo and K. Furukawa and T. Saraya and T. Takakura and K. Itou and M. Fukui and S. Suzuki and K. Takeuchi and I. Muneta and H. Wakabayashi and Y. Numasawa and A. Ogura and S. Nishizawa and K. Tsutsui and T. Hiramoto and H. Ohashi and H. Iwai},
title = {New methodology for evaluating minority carrier lifetime for process assessment},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100813958,
author = {D. Saito and I. Muneta and T. Hoshii and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima},
title = {Reliability of SiC Schottky Diodes with Mo2C Electrode},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100813957,
author = {C. Y. Su and T. Hoshii and I. Muneta and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima},
title = {Interface State Density of Atomic Layer Deposited Al2O3 on Beta-Ga2O3},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100813956,
author = {H. Kataoka and H. Iwai and T. Hoshii and I. Muneta and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima},
title = {A Defect Density Profile Extraction Method for GaN Epi-Wafers},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100830066,
author = {Eisuke Anju and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
title = {Self-Heating-Effect-Free p/n-Stacked-NW on Bulk-FinFETs and 6T-SRAM Layout},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100830068,
author = {Suguru Tatsunokuchi and I. Muneta and T. Hoshii and H. Wakabayashi and K. Tsutsui and HIROSHI IWAI and K. Kakushima},
title = {Photovoltaic Properties of Lateral Ultra-Thin Si p-i-n structure},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100904007,
author = {安重 英祐 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
title = {ソース/ドレイン逆凹型コンタクト構造による横型積層シリコンナノワイヤFETにおける自己発熱効果の緩和},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100904006,
author = {Zulkornain Bin Danial and 宗田 伊理也 and 早川 直希 and 角嶋 邦之 and 筒井 一生 and 若林 整},
title = {Sputtered MoS2 Thin Film Formation on CaF2 (111) Substrate},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100904005,
author = {坂本 拓朗 and 大橋 匠 and 松浦 賢太朗 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
title = {スパッタの低パワー化によるMoS2薄膜のキャリヤ濃度低減},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100904004,
author = {大橋 匠 and 坂本 拓朗 and 松浦 賢太朗 and 清水 淳一 and 外山 真矢人 and 石原 聖也 and 日比野 祐介 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 小椋 厚志 and 若林 整},
title = {Migration制御したスパッタリング法による2次元層状MoS2成膜},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100904002,
author = {Chen-Yi Su and Takuya Hoshii and Iriya Muneta and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Kuniyuki Kakushima},
title = {Initial trap and hysteresis analysis of Atomic Layer Deposited Al2O3 on b-Ga2O3},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100818000,
author = {K. Matsuura and J. Shimizu and M. Toyama and T. Ohashi and I. Muneta and S. Ishihara and K. Kakushima and K. Tsutsui and A. Ogura and H. Wakabayashi},
title = {Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate},
booktitle = {2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings},
year = 2018,
}
@inproceedings{CTT100786669,
author = {Kazuo Tsutsui and Tomohiro Matsushita and Takayuki Muro and Yoshitada Morikawa and Kotaro Natori and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kouichi Hayashi and Fumihiko Matsui and Toyohiko Kinoshita},
title = {Analyses of 3D Atomic Arrangements of Impurity Atoms Doped in Silicon by Spectro-Photoelectron Holography Technique},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100786668,
author = {Kotaro Natori and Tatsuhiro Ogawa and Takuya Hoshii and Tomohiro Matsushia and Takayuki Muro and Toyohiko Kinoshita and Yoshitada Morikawa and Kuniyuki Kakushima and Fumihiko Matsui and Kouichi Hayashi and Hitoshi Wakabayashi and Kazuo Tsutsui},
title = {Atomic scale analyses of As doped in Si by soft X-ray photoelectron spectroscopy and spectro-photoelectron holography},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100830067,
author = {Suguru Tatsunokuchi and Iriya Muneta and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Kuniyuki Kakushima},
title = {Photovoltaic Properties of Lateral Si Nano Wall Solar Cells},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100809869,
author = {筒井一生 and 角嶋邦之 and 星井 拓也 and 中島 昭 and 西澤 伸一 and 若林整 and 宗田伊理也 and 佐藤 克己 and 末代 知子 and 齋藤 渉 and 更屋 拓哉 and 伊藤 一夫 and 福井 宗利 and 鈴木 慎一 and 小林 正治 and 高倉 俊彦 and 平本 俊郎 and 小椋 厚志 and 沼沢 陽一郎 and 大村 一郎 and 大橋 弘通 and 岩井洋},
title = {三次元スケーリングによるIGBTのV[CEsat]低減の実験的検証 (電子デバイス 半導体電力変換合同研究会 パワーデバイス・パワーエレクトロニクスとその実装技術)},
booktitle = {電気学会研究会資料. EDD = The papers of technical meeting on electron devices, IEE Japan},
year = 2017,
}
@inproceedings{CTT100808048,
author = {M. Toyama and T. Ohashi and K. Matsuura and J. Shimizu and I. Muneta and K. Kakushima and K. Tsutsui and H. Wakabayashi},
title = {TiN/Ti Ohmic Contact for Sputtered-MoS2 Film using Forming-Gas Annealing},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100811306,
author = {K. Tsutsui and K. Kakushima and T. Hoshii and A. Nakajima and S. Nishizawa and H. Wakabayashi and I. Muneta and K. Sato and T. Matsudai and W. Saito and T. Saraya and K. Itou and M. Fukui and S. Suzuki and M. Kobayashi and T. Takakura and T. Hiramoto and A. Ogura and Y. Numasawa and I. Omura and H. Ohashi and H. Iwai},
title = {3D Scaling for Insulated Gate Bipolar Transistors (IGBTs) with Low Vce(sat)},
booktitle = {Proceedings of International Conference on ASIC},
year = 2017,
}
@inproceedings{CTT100788575,
author = {N. Hayakawa and I. Muneta and T. Ohashi and K. Matsuura and J. Shimizu and K. Kakushima and K. Tsutsui and H. Wakabayashi},
title = {Conductance control by tunneling-barrier thickness optimizations in Fe/Al2O3/MoS2 structure},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100786678,
author = {Takuya Hoshii and Rumi Takayama and Akira Nakajima and Shin-ichi Nishizawa and Hiromichi Ohashi and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kazuo Tsutsui},
title = {Back-gate effect on p-channel GaN MOSFETs on Polarization-Junction Substrate},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100780961,
author = {J. Shimizu and T. Ohashi and K. Matsuura and I. Muneta and K. Kakushima and K. Tsutsui and N. Ikarashi and H. Wakabayashi},
title = {Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET},
booktitle = {2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM)},
year = 2017,
}
@inproceedings{CTT100780963,
author = {S. Hirano and J. Shimizu and K. Matsuura and T. Ohashi and I. Muneta and K. Kakushima and K. Tsutsui and H. Wakabayashi},
title = {Crystallinity improvement using migration-enhancement methods for sputtered-MoS2 films},
booktitle = {2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM)},
year = 2017,
}
@inproceedings{CTT100808047,
author = {岡田 泰典 and 山口 晋平 and 大橋 匠 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
title = {Resistivity Reduction of Low-Carrier-Density Sputtered-MoS2 Film using Fluorine Gas},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100830070,
author = {K. Kakushima and Yuta Ikeuchi and T. Hoshii and I. Muneta and H. Wakabayashi and K. Tsutsui and H. Iwai and T. Kikuchi and S. Ishikawa},
title = {Low Temperature Ohmic Contact for p-type GaN using Mg Electrodes},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100830069,
author = {K. Kakushima and T. Suzuki and T. Hoshii and I. Muneta and H. Wakabayashi and HIROSHI IWAI and Y. Aoki,H. Nohira Aoki and KAZUO TSUTSUI},
title = {Formation of Mo2C Electrodes using Stacked Sputtering Process for Thermally Stable SiC Schottky Barrier Diodes},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100903977,
author = {篠原 健朗 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
title = {nMOSFET応用に向けた窒化ハフニウムの硫化による二硫化ハフニウム膜の作製},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100903975,
author = {早川直希 and 宗田伊理也 and 大橋匠 and 松浦賢太朗 and 清水淳一 and 角嶋邦之 and 筒井一生 and 若林整},
title = {トンネル電極を形成したスパッタ MoS2膜における電流の障壁膜厚依存性},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100903978,
author = {外山 真矢人 and 大橋 匠 and 松浦 賢太朗 and 清水 淳一 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
title = {スパッタリング法で堆積したMoS2薄膜へのコンタクト抵抗と熱処理依存性},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100903976,
author = {龍口 傑 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 岩井 洋 and 角嶋 邦之},
title = {横型Siナノウォール太陽電池の発電特性に関する検討},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100830074,
author = {Y. M. Lei and T. Kaneko and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima and M. Furuhashi and S. Tomohisa and S. Yamakawa},
title = {Influence of Interface ALD-SiO2 Layer for Lanthanum Silicate Gate Dielectrics for 4H-SiC MOS Capacitors},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100830071,
author = {Y. Ikeuchi and T. Hoshii and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima and S.Ishikawa},
title = {Characteristics of Fe/pGaN Contact upon Annealing Process},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100786667,
author = {K. Kakushima and T. Hoshii and K. Tsutsui and A. Nakajima and S. Nishizawa and H. Wakabayashi and I. Muneta and K. Sato and T. Matsudai and W. Saito and T. Saraya and K. Itou and M. Fukui and S. Suzuki and M. Kobayashi and T. Takakura and T. Hiramoto and A. Ogura and Y. Numasawa and I. Omura and H. Ohashi and H. Iwai},
title = {Experimental Verification of a 3D Scaling Principle for Low Vce(sat) IGBT},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100830077,
author = {Tomoyuki Suzuki and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Hiroshi Nohira and Kuniyuki Kakushima},
title = {Properties of SiC Schottky Junction with Laminated Molybdenum/Carbon Electrode},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100780956,
author = {J. Shimizu and T. Ohashi and K. Matsuura and I. Muneta and K. Kakushima and K. Tsutsui and H. Wakabayashi},
title = {High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Low-Temperature Forming-Gas Annealing for 3D-IC},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100903979,
author = {安重 英祐 and 大橋 匠 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
title = {Accumulation-Mode積層型ナノワイヤCMOSデバイスのチャネル不純物濃度およびゲート電極仕事関数の依存性},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100830120,
author = {Akira Nakajima and Shunsuke Kubota and Kazuo Tsutsui and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai and Sin-ichi Nishizawa and Hiromichi Ohashi},
title = {Monolithic Integration of GaN-based Normally-off P- and N-channel MOSFETs},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100780948,
author = {K. Matsuura and T. Ohashi and I. Muneta and S. Ishihara and N. Sawamoto and K. Kakushima and K. Tsutsui and A. Ogura and H. Wakabayashi},
title = {Sulfurization in Sulfur Vapor for Sputtered-MoS2 Film},
booktitle = {Proc. of 47th IEEE Semiconductor Interface Specialists Conference (SISC)},
year = 2016,
}
@inproceedings{CTT100830123,
author = {K. Tsutsui},
title = {Introduction of uneven structures under ohmic contacts to reduce contact resistances on AlGaN/GaN HEMTs},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100830121,
author = {Yusuke Takei and Tomohiro Shimoda and Wataru Saito and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai},
title = {Lowering Contact Resistances on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers: Effects of Configuration and Size of Lateral Patterns},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100830122,
author = {Shunsuke Kubota and Rei Kayanuma and Akira Nakajima and Shin-ichi Nishizawa and Shin-ichi Nishizawa and Hiromichi Ohashi and Hitoshi Wakabayashi and Kazuo Tsutsui},
title = {P-Channel AlGaN/GaN MOSFETs for Normally-Off Operation},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100830127,
author = {A. Nakajima and S. Kubota and R. Kayanuma and K. Tsutsui and K. Kakushima and H. Wakabayashi and H. Iwai and S. Nishizawa and H. Ohashi},
title = {An overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100830125,
author = {Akira Nakajima and Shin-Ichi Nishizawa and Hiromichi Ohashi and Rei Kayanuma and Kazuo Tsutsui and Shunsuke Kubota and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai},
title = {GaN-Based Monolithic Power Integrated Circuit Technology with Wide Operating Temperature on Polarization-Junction Platform},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100830262,
author = {M. Okamoto and K. Kakushima and Y. Kataoka and K. Natori and H. Wakabayashi and K. Tsutsui and H. Iwai and W. Saito},
title = {Dependence of Ti/C Ratio on Ohmic contact with TiC electrode for AlGaN/GaN structure},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100830263,
author = {T. Shoji and K. Kakushima and Y. Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
title = {Effect of Surface Potential Control and Interface States for Silicon Nanowire Solar Cells},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100830265,
author = {Kazuo Tsutsui and Masayuki Kamiya and Yusuke Takei and Wataru Saito and Kuniyuki Kakushima and Hitoshi Wakabayashi and Yoshinori Kataoka and Hiroshi Iwai},
title = {Low-resistive Contact Formation on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100830266,
author = {Y. Takei and M. Okamoto and W. Saito and K. Tsutsui and K. Kakushima and H. Wakabayashi and Y. Kataoka and H. Iwai},
title = {Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100830487,
author = {K. Tsutsui},
title = {GaN based power transistors: Proposals for low-loss operations},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100830471,
author = {K. Terayama and A. Nakajima and S. Nishizawa and H. Ohasi and K. Kakushima and H. Wakabayashi and K. Tsutsui and H. Iwai},
title = {Calculation of ultimate on-resistance in GaN lateral HFETs using device simulation},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100830474,
author = {M. Kamiya and Y. Takei and W. Saito and K. Kakushima and H. Wakabayashi and Y. Kataoka and K. Tsutsui and H. Iwai},
title = {Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100830478,
author = {T. Kato and T.Inamura and A.Sasaki and K.Aoki and K.Kakushima and Y.Kataoka and A. Nishiyama and N. Sugii and H.Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
title = {Thickness-dependent electrical characterization of β‐FeSi2},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100830479,
author = {Minjae Yoon and K. Terayama and A. Nakajima and S. Nichizawa and H. Ohasi and K. Kakushima and H. Wakabayashi and K. Tsutsui and H. Iwai},
title = {Investigation into scaling law in AlGaN/GaN Fin field effect transistors by device simulation},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100830278,
author = {T. Takahashi and T. Tamura and K. Tsutsui},
title = {Fabrication of fluoride heterostructures on Si: High temperature growth with CoSi2 buffer layer controlling undesirable chemical reactions},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100830277,
author = {T. Ohashi and H. Wakabayashi and K. Kakushima and N. Sugii and A. Nishiyama and Y. Kataoka and K. Natori and K. Tsutsui and H. Iwai},
title = {Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100830480,
author = {M. Motoki and K. Kakushima and Y. Kataoka and A. Nishiyama and N. Sugii and H.Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
title = {Effect of Annealing Temperature on Sheet Resistance of Ni Germanide Formed by Multi-Layered Ni and Ge Films},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100830473,
author = {Y. Ito and H. Hori and K. Tsutsui and K. Kakushima and H. Wakabayashi and Y.Kataoka and A.Nishiyama and N. Sugii and K. Natori and H. Iwai},
title = {Proposal of junction formation process for solar cells made of silicon microstructures},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100830481,
author = {H. Hasegawa and Y.Wu and J.Song and K. Kakushima and Y.Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
title = {Improvement of tunnel FET performance using narrow bandgap semiconductor silicide /Si hetero-structure source electrod},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100830483,
author = {Y. Nakamura and K. Kakushima and Y. Kataoka and A. Nishiyama and H. Wakabayashi and N. Sugii and K. Tsutsui and K. Natori and H. Iwai},
title = {Measurement of flat-band voltage shift using multi-stacked dielectric film},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100830484,
author = {M. Okamoto and K. Kakushima and Y. Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and H. Iwai and W. Saito},
title = {An Ohmic contact process for AlGaN/GaN Structures using TiSi2 electrodes},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100830485,
author = {Chunmeng Dou and Kakushima and Y. Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
title = {Determination of oxide traps distribution in high-k/InGaAs MOS capacitor by capacitance-voltage measurement},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673093,
author = {雷 一鳴 and Shu Munekiyo and Kuniyuki KAKUSHIMA and Takamasa Kawanago and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI and M. Furuhashi and N. Miura and S. Yamakawa},
title = {Interface reaction analysis of La2O3/SiC upon annealing by ATR-FTIR},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100830267,
author = {Akira Nakajima and Sin-ichi Nishizawa and Hiromichi Ohashi and Hiroaki Yonezawa and Kazuo Tsutsui and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai},
title = {One-Chip Operation of GaN-Based p-Channel and N-Channel Heterojunction Field Effect Transistors},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100780941,
author = {T. Ohashi and K. Suda and S. Ishihara and N. Sawamoto and S. Yamaguchi and K. Matsuura and K. Kakushima and N. Sugii and A. Nishiyama and Y. Kataoka and K. Natori and K. Tsutsui and H. Iwai and A. Ogura and Hitoshi Wakabayashi},
title = {Multi-Layered MoS2 Thin Film Formed by High-Temperature Sputtering for Enhancement-Mode nMOSFETs},
booktitle = {Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials},
year = 2014,
}
@inproceedings{CTT100672963,
author = {関拓也 and Kuniyuki KAKUSHIMA and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {Physical understanding of La-silicate gate dielectrics thermally formed by interface reaction on Si(110) and (111)},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100672961,
author = {Hiroshi Oomine and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and Akira Nishiyama and Nobuyuki Sugii and 片岡好則 and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {Effect of pretreatment for high-/k//InGaAs interface property},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100672910,
author = {Taichi Inamura and Takafumi Katou and 佐々木亮人 and 青木克明 and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {A study on silicide semiconductors for high efficiency thin film photovoltaic devices},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100672909,
author = {Jiangning Chen and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI and 齋藤渉},
title = {Electrical characteristics of AlGaN/GaN HEMT with La2O3 gate dielectricsn},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100672908,
author = {wei li and 佐々木亮人 and 大図秀行 and 青木克明 and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {Resistivity Measurement of Monoclinic Thin Tungsten Oxide Film Due to Annealing Processesn},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100672427,
author = {K. Tuokedaerhan and Shuhei Hosoda and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode},
booktitle = {K. Tuokedaerhan, S. Hosoda, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai, “Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode”, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan},
year = 2014,
}
@inproceedings{CTT100672409,
author = {Y. Wu and Hiroki Hasegawa and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and 片岡好則 and Kenji Natori and HIROSHI IWAI},
title = {Influence of structure parameter on Mg2Si-Si Hetero-junction Tunneling FET},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100672405,
author = {unknown unknown and 竇春萌 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {A study on Resistive Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode with CeOx Buffer Layer},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100672393,
author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT,},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100672372,
author = {DARYOUSH ZADEH and Hiroshi Oomine and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {Low DitHigh-k/In0.53Ga0.47As Gate Stack with CET down to 0.73 nm and Thermally Stable Silicide Contact by Suppression of Interfacial Reaction},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100672369,
author = {Y. Wu and Hiroki Hasegawa and Kuniyuki KAKUSHIMA and 大毛利健治 and T. Watanabe and Hitoshi Wakabayashi and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and 片岡好則 and Kenji Natori and Keisaku Yamada and HIROSHI IWAI},
title = {Influence of Band Discontinuities at Source-Channel contact in Tunnel FET Performance},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100669358,
author = {K. Tuokedaerhan and Shuhei Hosoda and Yoshinori Nakamura and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {Influence of Carbon Incorporation in W Gate Electrode for La-silicate Gate Dielectrics},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100669171,
author = {Mari Okamoto and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and HIROSHI IWAI},
title = {An Ohmic Contact Process for AlGaN/GaN Structures using TiS},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100674681,
author = {小路智也 and 伊藤勇磨 and 堀隼人 and 宮澤遼太 and 嘉藤貴史 and 角嶋邦之 and 若林整 and 筒井一生 and 片岡好則 and 岩井洋},
title = {Surface States, Potential and Interface Control for Si Nanowire PV},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100674087,
author = {神谷真行 and 武井優典 and 齋藤渉 and 角嶋邦之 and 若林整 and 片岡好則 and 筒井一生 and 岩井洋},
title = {AlGaN/GaN高電子移動度トランジスタへの凹凸AlGaN層導入による低抵抗コンタクト形成の可能性},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100674053,
author = {伊藤勇磨 and 堀隼人 and 筒井一生 and 角嶋邦之 and 若林整 and 片岡好則 and 西山彰 and 杉井信之 and 名取研二 and 岩井洋},
title = {微細Si構造を利用した太陽電池に適した接合プロセスの提案},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100674052,
author = {米澤宏昭 and 萱沼怜 and 中島 昭 and 西澤伸一 and 大橋弘通 and 筒井一生 and 角嶋邦之 and 若林整 and 岩井洋},
title = {広い温度範囲で動作するAlGaN/GaN系Pチャネル型HFET},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100674051,
author = {寺山一真 and 中島 昭 and 西澤伸一 and 大橋弘通 and 角嶋邦之 and 若林整 and 筒井一生 and 岩井洋},
title = {デバイスシミュレーションによる横型GaNパワーデバイスの極限オン抵抗の試算},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100674050,
author = {堀隼人 and 伊藤勇磨 and 筒井一生 and 角嶋邦之 and 若林整 and 片岡好則 and 西山彰 and 杉井信之 and 名取研二 and 岩井洋},
title = {薄膜SOI太陽電池の発電特性への基板バイアス効果},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100674049,
author = {武井優典 and 岡本真里 and マンシン and 萱沼怜 and 神谷真行 and 齋藤渉 and 筒井一生 and 角嶋邦之 and 若林整 and 片岡好則 and 岩井洋},
title = {AlGaN/GaN系2次元電子ガスへのコンタクト特性における電極材料およびAlGaN膜厚依存性},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100674046,
author = {松川佳弘 and 岡本真里 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 齋藤渉},
title = {AlGaN/GaN上のTi/C/TiN電極のコンタクト抵抗：Ti/C膜厚及び比率依存性},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100674044,
author = {Yoon Minjae and 寺山一真 and 中島 昭 and 西澤伸一 and 大橋弘通 and 角嶋邦之 and 若林整 and 筒井一生 and 岩井洋},
title = {デバイスシミュレーションによるAlGaN/GaN系FinFETsにおけるスケーリング則の検証},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100674010,
author = {雷 一鳴 and 宗清修 and 角嶋邦之 and 川那子高暢 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 古橋 壮之 and 三浦 成久 and 山川 聡},
title = {ATR-FTIR法を用いた熱処理によるLa2O3/SiC界面反応の解析},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100674004,
author = {劉 璞誠 and 竇春萌 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
title = {コンダクタンス法によるAlGaN/GaNヘテロ接合界面トラップに関する研究},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100674002,
author = {譚錫昊 and 川那子高暢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
title = {高電圧ストレスによるAlGaN/GaNの界面とバルクトラップの測定に関する研究},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673999,
author = {元木雅章 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
title = {NiとGe積層薄膜によって形成したNiGe膜のシート抵抗と熱処理温度の関係},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673477,
author = {長谷川明紀 and 呉研 and 宋 禛漢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
title = {Mg/Si極薄膜積層の熱処理を用いて作製したMg2Siの赤外線吸収特性評価},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673475,
author = {小路智也 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
title = {Siナノワイヤー曲面における保護膜界面準位密度の研究},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673474,
author = {岡本真里 and 松川佳弘 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 大橋弘通 and 岩井洋 and 齋藤渉},
title = {TiB2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673473,
author = {今村浩章 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
title = {積層シリサイド化スパッタプロセスにより作成したNiシリサイドショットキーダイオードの評価},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673472,
author = {吉原亮 and 元木雅章 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
title = {Pを導入したNiSi2/n-Geコンタクトの電気特性と不純物拡散の様子},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673471,
author = {細田修平 and Tuokedaerhan Kamale and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
title = {W2C電極導入によるLa-silicate/Siにおける平坦な界面の実現},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673468,
author = {関拓也 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
title = {Si(110),(111)基盤上で熱処理による界面反応で形成したLa-silicateゲート絶縁膜の物理的理解に関する研究},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673467,
author = {大嶺洋 and ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ and 角嶋邦之 and 西山彰 and 杉井信之 and 片岡好則 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
title = {La2O３/ InGaAs界面ラフネスに及ぼすALDプロセスの影響},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673466,
author = {稲村太一 and 嘉藤貴史 and 佐々木亮人 and 青木克明 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
title = {β-FeSi2の抵抗率熱処理依存性},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673464,
author = {LiWei and 佐々木亮人 and 大図 秀行 and 青木克明 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
title = {単斜晶WO3薄膜抵抗率の熱処理依存性},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673463,
author = {陳江寧 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 齋藤渉},
title = {La2O３ゲート絶縁膜を用いたAlGaN/GaNデバイスのプロセス依存性},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673462,
author = {呉研 and 長谷川明紀 and 角嶋邦之 and 渡辺 孝信 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
title = {Mg2Si-Siヘテロ接合トンネルFET特性の構造依存性},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673460,
author = {Tuokedaerhan Kamale and Shuhei Hosoda and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {W2Cゲート電極によるLa-silicate MOSFETの移動度改善},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673418,
author = {ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ and 大嶺洋 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
title = {低界面準位とsub-nm CETを有するLa2O３/ In0.53Ga0.47Asゲートスタックの実現},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673381,
author = {小路智也 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
title = {立体Si構造における局所的な界面準位密度の抽出},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673377,
author = {中島 昭 and Hiroaki Yonezawa and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and 西澤伸一 and 大橋弘通 and Hitoshi Wakabayashi and HIROSHI IWAI},
title = {One-chip operation of GaN-based P-channel and N-channel Heterojunction Field Effect Transistors},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673190,
author = {Atsushi Takemasa and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {Electrical characteristics of n-type diamond contacts with Ti, Ni, NiSi2 and Ni3P electrodes},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673189,
author = {Takumi Ohashi and Hitoshi Wakabayashi and Kuniyuki KAKUSHIMA and Nobuyuki Sugii and Akira Nishiyama and Yoshinori Kataoka and Kenji Natori and KAZUO TSUTSUI and HIROSHI IWAI},
title = {Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673188,
author = {Hayato Hori and Yuuma Itou and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and HIROSHI IWAI},
title = {Effects of substrate back bias on solar cells formed on thin SOI structures},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673186,
author = {Sin Man and Rei Kayanuma and Yusuke Takei and T. Takahashi and M. Shimizu and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and HIROSHI IWAI},
title = {A Study on the Fabrication of GaN-FinFET Using Selective Area Growth Method},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673182,
author = {Kazuma Terayama and 中島 昭 and 西澤伸一 and 大橋弘通 and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and KAZUO TSUTSUI and HIROSHI IWAI},
title = {Caluculation of ultimate on-resistance in GaN lateral HFETs using device simulation},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673181,
author = {Hiroaki Yonezawa and Rei Kayanuma and 中島 昭 and 西澤伸一 and 大橋弘通 and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and HIROSHI IWAI},
title = {AlGaN/GaN-based p-channel HFETs with wide-operating temperature},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673180,
author = {Yuuma Itou and Hayato Hori and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and HIROSHI IWAI},
title = {Schottky barrier height reduction process for silicide/Si interfaces},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673148,
author = {Yusuke Takei and Mari Okamoto and S. Man and Ryosuke Kayanuma and Masayuki Kamiya and 齋藤渉 and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and HIROSHI IWAI},
title = {Contact resistances depending on AlGaN layer thickness for AlGaN/GaN HEMT structures},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673145,
author = {Yoshihiro Matsukawa and Mari Okamoto and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {An Ohmic Contact Process for AlGaN/GaN Structures using TiCElectrode},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100673095,
author = {Takafumi Katou and Taichi Inamura and 佐々木亮人 and 青木克明 and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {Electrical characteristic of b-FeSi2},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100672974,
author = {Masaaki Motoki and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {Dependence between Sheet Resistance and Annealing Temperature of Ni Germanide Formed by Multi-Layered Ni and Ge Films},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100672973,
author = {Hiroki Hasegawa and Y. Wu and 宋 禛漢 and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {The Workshop on Future Trend of Nanoelectronics:WIMNACT 39},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100672971,
author = {Tomoya Shoji and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {Silicon Nanowire Solar Cells: Surface Passivation and Interface Analysis},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100672969,
author = {Hiroaki Imamura and Taichi Inamura and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {Characterization of Thin NiSi2 Films by Stacked Silicidation Sputtering Process with Kr Gas},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100672968,
author = {宋 禛漢 and Kazuki Matsumoto and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {Reduction of the resistivities of Ni Silicide formed by the reaction of Si nanowire and Ni thin films},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100672967,
author = {吉原亮 and Masaaki Motoki and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {Interface control process toward un-pinned metal/germanium Schottky contact},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100672966,
author = {Shuhei Hosoda and Kamale Tuokedaerhan and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Atomically flat interface of La-silicate/Si with W2C gate electrodes},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100672964,
author = {Atsushi Takemasa and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {Electrical characteristics of Ti, Ni, NiSi2 and Ni3P/n-diamond contacts},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100669174,
author = {宋 禛漢 and Kazuki Matsumoto and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and 杉井信之 and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {Resistivity of Ni silicide nanowires and its dependence on Ni film thickness used for the formation},
booktitle = {ECS Transactions},
year = 2013,
}
@inproceedings{CTT100830488,
author = {Shuhei Hosoda and Kamale Tuokedaerhan and Kuniyuki Kakushima and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kenji Natori and Hiroshi Iwai},
title = {Reliability of La-Silicate Mos Capacitors With Tungsten Carbide Gate Electrode},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100669354,
author = {Taichi Inamura and 佐々木亮人 and 青木克明 and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {A stacked sputtered process for β-FeSi2 formation},
booktitle = {ECS Transactions},
year = 2013,
}
@inproceedings{CTT100669175,
author = {Hiroshi Oomine and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {Electrical characterization of atomic layer deposited La2O3 films on In0.53Ga0.47AAs substrates},
booktitle = {ECS Transactions},
year = 2013,
}
@inproceedings{CTT100669173,
author = {Shuhei Hosoda and K. Tuokedaerhan and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {Reliability of La-silicate MOS capacitors with tungsten carbide gate electrode for scaled EOT},
booktitle = {ECS Transactions},
year = 2013,
}
@inproceedings{CTT100669355,
author = {Taichi Inamura and 佐々木亮人 and 青木克明 and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {A stacked sputtered process for β-FeSi2 formation},
booktitle = {ECS Transactions},
year = 2013,
}
@inproceedings{CTT100830490,
author = {T. Seki and T. Kawanago and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and H. Iwai},
title = {Electrical and Infrared Absorption Studies on La-silicate/Si Interface},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100830492,
author = {K. Tsutsui},
title = {Analyses of Electrical Activation and Deactivation of Impurities Doped in Scaled-down Si Device Structures by X-ray Photoelectron Spectroscopy},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658134,
author = {K. Tuokedaerhan and Shuhei Hosoda and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Work Function Extraction of W,Ta and Ti Carbides Formed by Multi Stacked Process},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100649139,
author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Metal Inserted Poly-Si wirh High Temperature Annealing for Achieving EOT of 0.62nm in La-silicate MOSFET},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100649144,
author = {小山将央 and Naoto Shigemori and Kenji Ozawa and Kiichi Tachi and Kuniyuki KAKUSHIMA and O. Nakatsuka and 大毛利健治 and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Keisaku Yamada and HIROSHI IWAI},
title = {Si/Ni-Silicide Schottky Junctions with Atomically Flat Interfaces Using NiSi2 Source},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100652202,
author = {Kuniyuki KAKUSHIMA and Jun Kanehara and takeo hattori and KAZUO TSUTSUI and HIROSHI IWAI},
title = {Boron depth profile of a plasma immersed substrate by XPS analysis},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100654160,
author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Nitrogen incorporated La-silicate gate dielectric with high scalability},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100654161,
author = {マイマイティ マイマイティレャアティ and 関拓也 and Kuniyuki KAKUSHIMA and Ahmet Parhat and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Evaluation of oxide traps in La based oxides for direct high-k/Si capacitor},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100654165,
author = {unknown unknown and A. Ablimit and Kuniyuki KAKUSHIMA and パールハットアヘメト and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Electron transport in ballistic diodes: influence of phonon generation in drain region},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100654572,
author = {DARYOUSH ZADEH and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Characterization of metal Schottky junction for InGaAs substrate},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100654573,
author = {竇春萌 and Soshi Sato and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Si nanowire FET with asymmetric channel},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100654574,
author = {Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {An analytical model of a tunnel FET with Schottky junction},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100654576,
author = {K.Tuokedaerhan and 金田翼 and Kuniyuki KAKUSHIMA and Ahmet Parhat and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Impact of annealing ambient for La2O3/Si capacitor},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100654577,
author = {来山大祐 and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {[Effect of Silicate Formation at Metal Gate/High-k Interface on Electrical Characteristics of La2O3 gated MOS Devices},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100654579,
author = {中島一裕 and Wei Li and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Interface state density measurements of 3D silicon channel by charge pumping method},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100654580,
author = {中島一裕 and Wei Li and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Interface state density measurements of 3D silicon channel by charge pumping method},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100654582,
author = {Ryuji Hosoi and Yuya Suzuki and ダリューシュザデ and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100654583,
author = {Wei Li and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Interface state density measurements of 3D silicon channel by charge pumping method},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100654585,
author = {shinichi kano and 竇春萌 and unknown unknown and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Impact of metal electrode material on resistive switching properties of Ce oxides},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100654588,
author = {田中祐樹 and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Impact of annealing on structural change in amorphous carbon: effect of Fe catalyst},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100654590,
author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {A novel Ni silicidation technology for Schottky diode formation},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100654591,
author = {Kana Tsuneishi and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Electrical properties of Tm2O3 gate dielectric and its scaling issues},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100654592,
author = {Michihiro Hosoda and Yeonghun Lee and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Size dependent phonon limited electron mobility of Si nanowire},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100654593,
author = {Kazuki Matsumoto and 小山将央 and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Ni silicidation for Si fin and nanowire structures},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100654594,
author = {吉原亮 and Yuta Tamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Electrical characterization of atomically flat NiSi2 Schottky diode},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100654596,
author = {Jun Kanehara and Yusuke Takei and Youhei Miyata and Hiroshi Nohira and Y. Izumi and TAKAYUKI MURO and 木下豊彦 and パールハットアヘメト and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and takeo hattori and HIROSHI IWAI},
title = {Depth Profiling of As with Various Chemical Bonding States Doped in Si Shallow Junction by Using Soft X-ray Photoelectron Spectroscopy},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100654598,
author = {Kouhei Akita and Jun Kanehara and Hiroshi Nohira and Y. Izumi and TAKAYUKI MURO and 木下豊彦 and パールハットアヘメト and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and takeo hattori and HIROSHI IWAI},
title = {[517] Y. Miyata, K. Akita, J. Kanehara, H. Nohira, Y. Izumi, T. Muro, T. Kinoshita, P. Analysis of Boron Doped in Si Fin Structure by Soft X-ray Photoelectron Spectroscopy},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100654663,
author = {Tasuku Kaneda and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Influence of Flash Lamp Annealing on Electrical Characteristics of MOS Device with Si/ La2O3/n-Si Structure},
booktitle = {ECS Transactions},
year = 2013,
}
@inproceedings{CTT100654667,
author = {中島一裕 and Soshi Sato and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Dependence of Interface-State Density on Three Dimensional Silicon Structure Measured by Charge-Pumping Method},
booktitle = {ECS Transactions},
year = 2013,
}
@inproceedings{CTT100654668,
author = {中島一裕 and Soshi Sato and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Dependence of Interface-State Density on Three Dimensional Silicon Structure Measured by Charge-Pumping Method},
booktitle = {ECS Transactions},
year = 2013,
}
@inproceedings{CTT100654678,
author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and 中塚理 and パールハットアヘメト and Hiroshi Nohira and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Electrical Properties of Ultrathin-Nickel-Silicide Schottky Diodes on Si(100)},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100654679,
author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Characterization of Effective Electron Mobility in n/MOSFETs with Direct Contact La-silicate/Si Structure},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100654680,
author = {Yuya Suzuki and ダリューシュザデ and Ryuji Hosoi and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Electrical characteristics of La2O3/In0.53Ga0.47AAs capacitors with surface nitridation},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100657453,
author = {shinichi kano and 竇春萌 and unknown unknown and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and 片岡好則 and Kenji Natori and Miranda Enrique and takeo hattori and HIROSHI IWAI},
title = {Influence electrode materials on CeOx based resistive switching},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658112,
author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Interface properties of La-silicate gate dielectrics on Si(110)surface},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658129,
author = {unknown unknown and shinichi kano and 竇春萌 and Kuniyuki KAKUSHIMA and Ahmet Parhat and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658130,
author = {unknown unknown and shinichi kano and 竇春萌 and Kuniyuki KAKUSHIMA and Ahmet Parhat and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658131,
author = {unknown unknown and shinichi kano and 竇春萌 and Kuniyuki KAKUSHIMA and Ahmet Parhat and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658132,
author = {unknown unknown and shinichi kano and 竇春萌 and Kuniyuki KAKUSHIMA and Ahmet Parhat and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658307,
author = {Wei Li and 中島一裕 and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Extraction of Interface State Density of 3-dimensional Si channel},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658327,
author = {Jiangning Chen and 鹿 国強 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658328,
author = {Jiangning Chen and 鹿 国強 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658329,
author = {Jiangning Chen and 鹿 国強 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658330,
author = {shinichi kano and 竇春萌 and unknown unknown and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Transient Switching Characteristics of Ce-oxide Resistive Switching Devices},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658331,
author = {Yuya Suzuki and ダリューシュザデ and Hiroshi Oomine and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Interface Engineering of La2O3/InGaAs Capacitors with High Temperature Stability},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658332,
author = {田中祐樹 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Interface controlled metal contact for n-type diamonds},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658334,
author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Stacked Ni-Silicidation Process for Schottky Barrier FET},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658335,
author = {Kana Tsuneishi and Jiangning Chen and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {A Robust Ohmic Contact Process for AlGaN/GaN using Ti-silicide electrodes},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658354,
author = {Kazuki Matsumoto and 小山将央 and Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Size dependent resistivity change of Ni-silicides in nano-region},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658356,
author = {Yang Zhao and マイマイティ マイマイティレャアティ and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Separation of bulk and interface traps of La-silicate on Si(100) surface},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658357,
author = {Yang Zhao and マイマイティ マイマイティレャアティ and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Separation of bulk and interface traps of La-silicate on Si(100) surface},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658358,
author = {Yang Zhao and マイマイティ マイマイティレャアティ and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Separation of bulk and interface traps of La-silicate on Si(100) surface},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658361,
author = {Taichi Inamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Formation of Fe-silicides using Multi-Stacking Sputtering Process},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658362,
author = {Taichi Inamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Formation of Fe-silicides using Multi-Stacking Sputtering Process},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658363,
author = {Hiroshi Oomine and ダリューシュザデ and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658364,
author = {Hiroshi Oomine and ダリューシュザデ and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658365,
author = {関拓也 and Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Infrared absorption study of La-silicate gate dielectrics},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658366,
author = {Atsushi Takemasa and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Impact of Surface Treatments for Metal Contact on p-type Diamonds},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658389,
author = {Shuhei Hosoda and K. Tuokedaerhan and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Improvenents in interface, states with W-carbide metal gate for La2O3/si MOS Capacitor},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658390,
author = {吉原亮 and Yuta Tamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {A Novel Ohmic Contact Process for n-Ge Substrates},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658393,
author = {宋 禛漢 and 小山将央 and Kazuki Matsumoto and Kuniyuki KAKUSHIMA and 中塚理 and 大毛利健治 and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Keisaku Yamada and HIROSHI IWAI},
title = {Atomically flat Ni-silicide/Si interface using NiSi2 sputtering},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658396,
author = {Mari Okamoto and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Extraction of Energy Band Diagram of AlGaN/GaN with SiO2 Capped Annealing using X-ray Photoelectron Spectroscopy},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658546,
author = {関拓也 and Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {International Symposium on Next-Generation Electronics(ISNE 2013)},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658611,
author = {Kazuki Matsumoto and 小山将央 and Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Electrical Analyses of Nickel Silicide Formed on Si Nanowires with 10-nm-width},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658699,
author = {Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and KAZUO TSUTSUI and HIROSHI IWAI},
title = {Interface State Density of Passivation/Nanowire Interface},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100658700,
author = {Kuniyuki KAKUSHIMA and 吉原亮 and KAZUO TSUTSUI and HIROSHI IWAI},
title = {A Low Temperature Ohmic Contact Process for n-type Ge Substrates},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100659873,
author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Interface properties of La-silicate gate dielectrics on Si(110)surface},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100660879,
author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100660886,
author = {ダリューシュザデ and Hiroshi Oomine and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {Scalable La-silicate Gate Dielectric on InGaAs Substrate with High Thermal Stability and Low Interface State Density},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100660888,
author = {unknown unknown and shinichi kano and 竇春萌 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100661649,
author = {石川昂 and 小路智也 and 角嶋邦之 and 若林整 and 片岡好則 and 西山彰 and 杉井信之 and 筒井一生 and 名取研二 and 岩井洋},
title = {チャージポンピング法を用いた三次元Si構造の界面準位密度測定},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100661653,
author = {米澤宏昭 and 中島 昭 and 西澤 伸一 and 大橋 弘通 and 筒井一生 and 角嶋邦之 and 若林整 and 岩井洋},
title = {AlGaN/GaN系pチャンネルHFETの製作},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100661655,
author = {武井優典 and 神谷真行 and 寺山一真 and 米澤宏昭 and 齋藤 渉 and 筒井一生 and 角嶋邦之 and 若林整 and 片岡好則 and 岩井洋},
title = {AlGaN/GaN系HEMTにおけるコンタクト特性のAlGaN層厚依存性},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100661657,
author = {神谷真行 and 寺山一真 and 武井優典 and 齋藤 渉 and 角嶋邦之 and 若林整 and 片岡好則 and 筒井一生 and 岩井洋},
title = {AlGaN/GaN HEMTへの凹凸AlGaN層導入による２次元電子ガス濃度分布評価および低抵抗コンタクト形成の可能性},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100661659,
author = {大橋匠 and 若林整 and 角嶋邦之 and 杉井信之 and 西山彰 and 片岡好則 and 名取研二 and 筒井一生 and 岩井洋},
title = {単層MoS2チャネルを用いたn-MOSFETの性能見積もり},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100661660,
author = {松川佳弘 and 岡本真里 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 齋藤渉},
title = {AlGaN/GaN上のTiC電極の電流電圧特性の熱処理温度依存性},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100661663,
author = {嘉藤貴史 and 稲村太一 and 佐々木 亮人 and 青木 克明 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
title = {Fe層とSi層の積層スパッタにより形成されたβ-FeSi2のキャリア密度に関する研究},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100661664,
author = {劉 璞誠 and 米澤宏昭 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
title = {AlGaNのドライエッチングへのBcl3の影響に関する研究},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100661665,
author = {譚錫昊 and 岡本真里 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
title = {AlGaN/GaN上のTiSi2電極によるコンタクトの温度依存性},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100661678,
author = {元木雅章 and 吉原亮 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
title = {Pを導入したNiSi2電極を用いたn-Ge基板の電流電圧特性の熱処理依存性},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100661680,
author = {宗清修 and 川那子高暢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
title = {ショットキーゲート材料によるAlGaN/GaNの容量電圧特性への影響},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100661681,
author = {長谷川明紀 and 呉研 and 宋 禛漢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
title = {低バンドギャップ、バンドオフセットを持つ半導体シリサイド/Si接合によるトンネルFET特性向上},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100662336,
author = {中村嘉基 and 細田修平 and Tuokedaerhan Kamale and 角嶋邦之 and 片岡好則 and 西山彰 and 若林整 and 杉井信之 and 筒井一生 and 名取研二 and 岩井洋},
title = {W2Cゲート電極とLa-silicateゲート絶縁膜を用いたMOSキャパシタの信頼性評価},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100662337,
author = {小路智也 and 石川昂 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
title = {チャージポンピング法を用いた立体Si構造の絶縁膜界面準位の位置推定},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100662338,
author = {岡本真里 and 松川佳弘 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
title = {TiSi2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100662339,
author = {今村浩章 and 稲村太一 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
title = {Krガスを用いた積層シリサイド化スパッタプロセスにより形成したNiSi2の薄膜評価},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100662340,
author = {鹿国強 and 大嶺洋 and ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ and 角嶋邦之 and 西山彰 and 杉井信之 and 片岡好則 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
title = {ALD堆積条件によるLa2O３/In0.53Ga0.47Asキャパシタの電気特性への影響},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100662341,
author = {宋 禛漢 and 松本一輝 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 服部健雄 and 岩井洋},
title = {Niシリサイドナノワイヤ抵抗率のNi膜厚依存性},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100831028,
author = {DARYOUSH ZADEH and Hiroshi Oomine and Yuya Suzuki and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
title = {La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100830503,
author = {T. Kamale and R. Tan and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and H. Iwai},
title = {Interface Properties La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100830496,
author = {Y. Tanaka and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and S. Yamasaki and H. Iwai},
title = {TiC Electrode Formed by Multi-Stacking Process for Diamond Contact Metal},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100830548,
author = {Youhei Miyata and Jun Kanehara and Hiroshi Nohira and Yudai Izumi and Takayuki Muro and Toyohiko Kinoshita and Parhat Ahmet and Kuniyuki Kakushima and Kazuo Tsutsui and Takeo Hattori1 and Hiroshi Iwai},
title = {Analysis of Chemical Bonding States of Boron Doped in Si Fin Structures: Selective Observation on Top Surfaces and Sidewalls},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100830553,
author = {S. Kano and C. Dou and M. Hadi and K. Kakushima and P. Ahmet and A. Nishiyama and N. Sugii and K. Tsutsui and Y. Kataoka and K. Natori and E. Miranda and T. Hattori and H. Iwai},
title = {Influence of Electrode Material for CaOx Based Resistive Switching},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657639,
author = {吉原亮 and Yuta Tamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Thermally stable NiSi2 for Ge contact with Schottky barrirer height modulation capability},
booktitle = {ECS Transactions},
year = 2012,
}
@inproceedings{CTT100657642,
author = {Tohtarhan Kamal and R. Tan and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Interface Properties of La-silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT},
booktitle = {ECS Transactions},
year = 2012,
}
@inproceedings{CTT100657950,
author = {Jiangning Chen and Kana Tsuneishi and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics},
booktitle = {ECS Transactions},
year = 2012,
}
@inproceedings{CTT100657951,
author = {Jiangning Chen and Kana Tsuneishi and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics},
booktitle = {ECS Transactions},
year = 2012,
}
@inproceedings{CTT100658060,
author = {Kana Tsuneishi and Jiangning Chen and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Ti silicide electrodes low contact resistance for undoped AlGaN/GaN structure},
booktitle = {ECS Transactions},
year = 2012,
}
@inproceedings{CTT100657218,
author = {Kazuki Matsumoto and 小山将央 and Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Ni silicidation for Si Fin and nanowire strucures},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657217,
author = {Kazuki Matsumoto and 小山将央 and Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Ni silicidation for Si Fin and nanowire strucures},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657216,
author = {田中祐樹 and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Y. Tanaka, K. Kakushima, P. Ahmet, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai, “Impact of annealing on structural change in amorphous carbon: effect of Fe catalyst},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657214,
author = {shinichi kano and 竇春萌 and unknown unknown and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Impact of metal electrode material on resistive swirching properties of Ce oxides},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657212,
author = {Ryuji Hosoi and Yuya Suzuki and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657211,
author = {中島一裕 and Wei Li and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Interface state density measurements of 3D silicon channel by charge pumping method},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657208,
author = {Daisuke Kitayama and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Effect of Silicate Formation at Metal Gate/High-k Interface on Electrical Characteristics of La2O3 gated MOS Devices},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657205,
author = {K. Tuokedaerhan and Tasuku Kaneda and マイマイティ マイマイティレャアティ and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Impact of Annealing Ambient for La2O3/Si Capacitor},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657198,
author = {Wei Li and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Interface state density measurements of 3D silicon channel by conductance method},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657197,
author = {Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {An analytical model of a tunnel FET with Schottky junction},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657196,
author = {竇春萌 and Soshi Sato and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and HIROSHI IWAI and takeo hattori},
title = {Si nanowire FET with asymmetric channel},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657193,
author = {DARYOUSH ZADEH and Ryuji Hosoi and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Electrical Characterization and improvement of high-k/InGaAs devices},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657189,
author = {unknown unknown and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Influence of Heat Generation within Drain Region on Transport of Hot Electrons},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657188,
author = {マイマイティ マイマイティレャアティ and 関拓也 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Evaluation of oxide traps in La based oxides for direct high-k/Si capacitor},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657187,
author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Nitrogen incorporated La-silicate gate dielectric with high scalability},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657186,
author = {Kuniyuki KAKUSHIMA and Jun Kanehara and takeo hattori and KAZUO TSUTSUI and HIROSHI IWAI},
title = {Boron depth profile of a plasma immersed substrate by XPS analysis},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657195,
author = {竇春萌 and Soshi Sato and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and HIROSHI IWAI and takeo hattori},
title = {Si nanowire FET with asymmetric channel},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657249,
author = {Kana Tsuneishi and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Electrical properties of Tm2O3 gate dielectric and its scaling issues},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657252,
author = {吉原亮 and Yuta Tamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Electrical characterization of atomically flat NiSi2 Schottky diode”, Ni silicidation for Si Fin and nanowire strucures},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657357,
author = {Ryuji Hosoi and Yuya Suzuki and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Characterization of matal Schottky junction for In0.53Ga0.47AAs substrates},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657247,
author = {Michihiro Hosoda and Yeonghun Lee and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and HIROSHI IWAI},
title = {Size-dependent phonon-limited electron mobility in Si Nanowire MOSFETs},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657454,
author = {Wei Li and 中島一裕 and 竇春萌 and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and 片岡好則 and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Evaluation of Interfacial State Density of MOS Capacitor with Three-Dimensional Channel by Conductance Method},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657548,
author = {Youhei Miyata and Jun Kanehara and Hiroshi Nohira and Y. Izumi and T. Muro and 木下豊彦 and パールハットアヘメト and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and takeo hattori and HIROSHI IWAI},
title = {Soft X-ray Photoelectron Spectroscopy Study of Boron Doped on Top Surfaces and Sidewalls of Si Fin Structures},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657561,
author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {(100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657562,
author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {(100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657583,
author = {Kuniyuki KAKUSHIMA and Yuta Tamura and 吉原亮 and KAZUO TSUTSUI and HIROSHI IWAI},
title = {Interface Controlled Stacked Ni Silicidation Process with Schottky Barrier Height Controllability},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657633,
author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {A Proposal of Schottky Barrire Height Tuning Method with Interface Controlled Ni/Si Stacked Silicidation Process},
booktitle = {ECS Transactions},
year = 2012,
}
@inproceedings{CTT100657638,
author = {Yuya Suzuki and ダリューシュザデ and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Effect of In0.53Ga0.47AAs surface nitridation on electrical characteristics of high-k/capacitors},
booktitle = {ECS Transactions},
year = 2012,
}
@inproceedings{CTT100830546,
author = {T. Kawanago and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and H. Iwai},
title = {(100)- and (110)-Oriented nMOSFETs with Highly Scaled EOT in La-Silicate/Si Interface for Multi-Gate Architecture},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100657248,
author = {Kana Tsuneishi and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Electrical properties of Tm2O3 gate dielectric and its scaling issues},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100830555,
author = {Keita Takahashi and Yuji Hayashi and Ryosuke Kayanuma and Kazuo Tsutsui},
title = {Leakage Current Control of Fluoride Ultra-thin Films Grown on Ge Substrates},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100830559,
author = {Youhei Miyata and Jun Kanehara and Hiroshi Nohira and Yudai Izumi and Takayuki Muro and Toyohiko Kinoshita and Parhat Ahmet and Kuniyuki Kakushima and Kazuo Tsutsui and Takeo Hattori and Hiroshi Iwai},
title = {Soft X-ray Photoelectron Spectroscopy on Chemical Bonding States of Boron Doped in Si Fin Structures},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100830557,
author = {K. Kakushima and J. Kanehara and Y. Izumi and T. Muro and T. Kinoshita and P. Ahmet and K. Tsutsui and T. Hattori and H. Iwai},
title = {Concentration Depth Profiling of Heavily Doped Boron at and near SiO2/Si Interface by Angle-resolved Soft X-ray Photoelectron Spectroscopy},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100830554,
author = {Jun Kanehara and Youhei Miyata and Hiroshi Nohira and Yudai Izumi and Takayuki Muro and Toyohiko Kinoshita and Parhat Ahmet and Kuniyuki Kakushima and Kazuo Tsutsui and Takeo Hattori and Hiroshi Iwai},
title = {Chemical Bonding States of As in Si Shallow Junctions Detected by Soft X-ray Photoelectron Spectroscopy and their Profiles},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100830561,
author = {Y. Y. Illarionov and M. I. Vexler and S. M. Suturin and V. V. Fedorov and N. S. Sokolov and K. Tsutsui and K. Takahashi},
title = {Electron Tunneling in MIS Capacitors with MBE Grown Fluoride Layers on Si(111) and Ge(111): Role of Transvers Momentum Conservation},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100628214,
author = {鈴木佑哉 and 細井隆司 and ダリューシュザデ and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {high-k/In0.53Ga0.47As MOS キャパシタの容量-電圧特性の解析},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100628208,
author = {常石佳奈 and 来山大祐 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {W/Tm2O３/n-Si構造キャパシタの電気特性におけるTm2O３膜厚依存性},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100654662,
author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Electrical Properties of Rare-Earth oxides and La2O3 Stacked Gate Dielectrics},
booktitle = {ECS Transactions},
year = 2011,
}
@inproceedings{CTT100654666,
author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Electrical Properties of Rare-Earth oxides and La2O3 Stacked Gate Dielectrics},
booktitle = {ECS Transactions},
year = 2011,
}
@inproceedings{CTT100654916,
author = {竇春萌 and Soshi Sato and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
title = {Si nanowire FET with asymmetric channel},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100628819,
author = {田村雄太 and 角嶋邦之 and 中塚 理 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {NiとSiの積層薄膜によって形成したシリサイドのシート抵抗に対する熱処理温度の影響},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100628848,
author = {細田倫央 and 李映勲 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 岩井洋},
title = {矩形断面SiナノワイヤMOSFETにおけるフォノン散乱に制限された移動度のサイズ依存性},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100628847,
author = {叶真一 and MokhammadSholihul Hadi and 竇春萌 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {希土類酸化物(CeOX)を用いたMIM構造の抵抗スイッチング特性},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100628207,
author = {Kamale Tuokedaerhan and 金田翼 and マイマイティ マイマイティレャアティ and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {La2O3/n-Si 構造に対するPost Deposition Annealの電気特性への影響},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100627781,
author = {関 拓也 and 来山大祐 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {High-k/Si 直接接合構造における界面準位の定量評価について},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100627777,
author = {田中 祐樹 and 川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {シリコン基板上に堆積したナノカーボン薄膜への高温短時間アニーリングの影響},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100628833,
author = {LiWei and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {コンダクタンス法による立体チャネルを有するMOSキャパシタの界面準位密度の評価},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100628830,
author = {吉原 亮 and 角嶋邦之 and パールハットアヘメト and 中塚理 and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {Ni/Si積層から形成されるNiシリサイドのショットキーダイオードの電流特性},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100628814,
author = {金原潤 and 宮田陽平 and 秋田洸平 and 筒井一生 and 野平博司 and 室隆桂之 and 木下豊彦 and パールハットアヘメト and 角嶋邦之 and 服部健雄 and 岩井洋},
title = {Si中に極浅ドープされたAsの軟X線光電子分光による化学結合状態の検出とその深さ方向分布},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100628219,
author = {宮田陽平 and 金原潤 and 難波覚 and 三角元力 and 筒井一生 and 野平博司 and 室隆桂之 and 木下豊彦 and 角嶋邦之 and パールハットアヘメト and 服部健雄 and 岩井洋},
title = {軟X線光電子分光法を用いたFin構造中の不純物化学結合状態分析},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100628216,
author = {角嶋邦之 and 金原潤 and 筒井一生 and 服部健雄 and 岩井洋},
title = {高濃度ボロンドープ飼料の角度分解X線光電子分光による濃度分布解析},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100628215,
author = {松本一輝 and 小山将央 and 呉研 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {酸化膜被覆型SiナノワイヤおよびSi Fin構造におけるNiシリサイド成長機構の検討},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100623994,
author = {C. Dou and 向井 弘樹 and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Resistive switching behaviors of ReRAM having W/CeO2/Si/TiN structure},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100623983,
author = {Ahmet Parhat and 来山大祐 and 金田翼 and 鈴木 拓也 and Tomotsune Koyanagi and Miyuki Kouda and マイマイティ マイマイティレャアティ and Takamasa Kawanago and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Effects of Metal Layer Insertion on EOT scaling in TiN/Metal/ La2O3 Si High –k Gate Stacks},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100623969,
author = {Ahmet Parhat and 来山大祐 and 金田翼 and 鈴木 拓也 and Tomotsune Koyanagi and Miyuki Kouda and マイマイティ マイマイティレャアティ and Takamasa Kawanago and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {TiN/W/La2O3 /Si High-k Gate Stack for EOT below o.5nm},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100622712,
author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Metal Inserted Poly-Si Stacks with La2O3 Gate Dielectrics for Scaled EOT and VFB Control by Oxygen Incorporation},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100622711,
author = {Takashi Kanda and ダリューシュザデ and Y. C. Lin and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and E.Y. Chang and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS Capacitors},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100622706,
author = {来山大祐 and 久保田 透 and Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Precise Control of Silicate Reaction with La2O3 Gate Dielectrics towards Equivalent Oxide Thickness of 0.5 nm},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100622704,
author = {マイマイティ マイマイティレャアティ and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and HIROSHI IWAI},
title = {Remote-surface-roughness scattering-limited electron, mobility in ultrathin high-k gate stacked MOSFETs},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100622703,
author = {金田翼 and Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Effect of rare earth oxide capping for La-based gate oxides},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100622686,
author = {Takamasa Kawanago and 鈴木 拓也 and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {An effective process for oxygen defect suppression for La-based oxide gate dielectric},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100622685,
author = {中島一裕 and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Interface State Density Measurement of Three Dimensional Silicon Structures by Charge Pumping Method},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100622684,
author = {小山将央 and Naoto Shigemori and Hideaki Arai and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Lateral encroachment of Ni silicide into silicon nanowire},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100622683,
author = {Naoto Shigemori and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {An effective suppression process for Ni silicide enchroachment into Si nanowire},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100622598,
author = {ダリューシュザデ and Takashi Kanda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Effects of In0.53Ga0.47As Surface Preparation on MOS Device Electrical Characterization},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100622594,
author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Preparation and electrical characterization of CeO2 films for gate dielectrics application: comparative study of CVD and ALD processes},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100622593,
author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Rare earth oxide capping effect on La2O3 gate dielectrics toward EOT of 0.5nm},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100615527,
author = {KAZUO TSUTSUI and Masaoki Tanaka and Norifumi Hoshino and Hiroshi Nohira and Kuniyuki KAKUSHIMA and Ahmet Parhat and 佐々木雄一朗 and Bunji Mizuno and T. Muro and T. Kinoshita and takeo hattori and HIROSHI IWAI},
title = {Soft X-ray Photoelectron Spectroscopy Study of Activation and Deactivation of Impurities in Shallow Junctions},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100615530,
author = {unknown unknown and Kuniyuki KAKUSHIMA and Ahmet Parhat and M. Geni and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {The Effect of Isotropic and Anisotropic Scattering in Drain Region of Ballistic Channel Diode},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100830564,
author = {D. Kitayama and T. Koyanagi and K. Kakushima and P. Ahmet and K. Tsutsui and A. Nishiyama and N. Sugii and K. Natori and T. Hattori and H. Iwai},
title = {TiN Capping Effect on High Temperature Annealed RE-Oxide Devices for Scaled EOT},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100613726,
author = {Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Impact of Alkali-Earth-Elements Incorporation on Vfb R0ll-Off Characteristics of La2O3 Gated MOS Device},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100613735,
author = {Y. Wu and Naoto Shigemori and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and 西山彰 and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Observation of Tunneling FET operation in MOSFET with NiSi/Si Schottky source/channel interface},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100613733,
author = {来山大祐 and Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {TiN Capping Effect on High Temperature Annealed RE-Oxide MOS Capacitors for Scaled EOT},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100613732,
author = {Naoto Shigemori and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Suppression of Lateral Encroachment of Ni Silicide into Si Nanowires using Nitrogen Incorporation},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100613731,
author = {M. Mamatrishat and Miyuki Kouda and Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and A. Aierken and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and HIROSHI IWAI},
title = {Effect of Remote-Surface –Roughness Scattering on Electron Mobility in MOSFETs with High-k Dielectrics},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100613728,
author = {M.Bera and Ahmet Parhat and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and Nobuyuki Sugii and 西山彰 and takeo hattori and HIROSHI IWAI},
title = {Electrical Properties of Yttrium-Titanium Oxide High-k Gate Dielectric on Ge},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100616060,
author = {田中正興 and 金原潤 and 宮田陽平 and 角嶋邦之 and パールハットアヘメト and 室隆桂之 and 木下豊彦 and 野平博司 and 筒井一生 and 室田 淳一 and 服部健雄 and 岩井洋},
title = {Siエピタキシャル層にドープされたボロンの軟X線光電子分光},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100616058,
author = {竇 春萌 and マイマイティ マイマイティレャアティ and ダリューシュザデ and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {希土類(Ce,Eu)酸化物MIM構造の抵抗スイッチング特性},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100616055,
author = {呉研 and 茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {トンネルFET動作に向けたNiシリサイド/Si接触におけるトンネル電流の観測},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100616054,
author = {細井隆司 and 神田高志 and ダリューシュザデ and Yueh Chin Lin and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and Edward Yi Chang and 名取研二 and 服部健雄 and 岩井洋},
title = {絶縁膜材料を用いたIn0.53Ga0.47As MOSキャパシタの電気特性},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100616050,
author = {金田翼 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {Tm-oxide/La2O3構造ゲート絶縁膜の界面特性評価},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100616070,
author = {中島 一裕 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {チャージポンピング法による立体Si構造の界面準位密度の評価},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100830565,
author = {Keita Takahashi and Yuki Yoshizumi and Yuji Fukuoka and Noboru Saito and Kazuo Tsutsui},
title = {Epitaxial NiSi2 Buffer Technique for Fluoride Resonant Tunneling Devices on Si},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100616068,
author = {小山 将央 and 茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 西山彰 and 筒井一生 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {窒素導入によるSiナノワイヤ内へのNiシリサイド侵入抑制機構の検討},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100616063,
author = {マイマイティ マイマイティレャアティ and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {High-kゲートスタックMOSFETにおける電子移動度のリモート界面ラフネス散乱依存性},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100616062,
author = {鈴木 拓也 and 川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {希釈酸素雰囲気熱処理を用いたLaシリケート/Si MOS構造のVFB/Vthシフトの低EOTへの適用},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100616061,
author = {来山大祐 and 小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {高温短時間熱処理を用いた希土類MOSキャパシタへのTiNキャップ効果},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100613532,
author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Optimized Oxygen Annealing Process for Vth Tuning of p-MOSFET with High-k/Metal Gate Stacks},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100613529,
author = {角嶋邦之 and 小柳友常 and 来山大祐 and 幸田みゆき and 宋在烈 and 佐藤創志 and 川那子高暢 and M. マイマイティ and 舘喜一 and M.K. Bera and パールハットアヘメト and 野平博司 and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 山田啓作 and 岩井洋},
title = {LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御},
booktitle = {，野平博司，筒井一生，西山彰，杉井信之，名取研二，服部健雄，山田啓作，岩井洋“LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御” 応用物理学会分科会 シリコンテクノロジー No.127 pp.4-8（2010年7月22日 ）},
year = 2010,
}
@inproceedings{CTT100608701,
author = {茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {SiナノワイヤへのNiシリサイド形成と過剰な侵入とその抑制に関する検討},
booktitle = {電子情報通信学会技術研究報告 pp.17-22},
year = 2010,
}
@inproceedings{CTT100608700,
author = {来山大祐 and 小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {EOT=0.5nmに向けた希土類MOSデバイスの高温短時間熱処理の検討},
booktitle = {電子情報通信学会技術研究報告 pp.43-48},
year = 2010,
}
@inproceedings{CTT100607843,
author = {Kuniyuki KAKUSHIMA and Tomotsune Koyanagi and 来山大祐 and Miyuki Kouda and Jaeyeol Song and Takamasa Kawanago and M. Mamatrishat and Kiichi Tachi and M. K. Bera and Ahmet Parhat and Hiroshi Nohira and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and Keisaku Yamada and HIROSHI IWAI},
title = {Direct Contact of High-k/Si Gate Stack for EOT below 0.7 nm using LaCe-silicate Layer with Vfb controllability},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100830566,
author = {Keita Takahashi and Takao Oshita and Kazuo Tsutsui},
title = {Molecular Beam Epitaxy of Very Thin Fluoride Films on Ge(111) and Its Application to Resonant Tunneling Diodes},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100605146,
author = {Ahmet Parhat and Wataru Hosoda and unknown unknown and Yoshihisa Ohishi and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and HIROSHI IWAI},
title = {Er Inserted Ni Silicide Metal Source/Drain for Schottky MOSFETs},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100605145,
author = {Akira Uedono and KAZUO TSUTSUI and Shoji Ishibashi and Hiromichi Watanabe and Shoji Kubota and Kazuki Tenjinbayashi and Yasumasa Nakagawa and Bunji Mizuno and takeo hattori and HIROSHI IWAI},
title = {Vacancy-Type Defects in Ultra-Shallow Junctions Fabricated Using Plasma Doping Studied by Positron Annihilation},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100605137,
author = {KAZUO TSUTSUI and Norifumi Hoshino and Yasumasa Nakagawa and Masaoki Tanaka and Hiroshi Nohira and Kuniyuki KAKUSHIMA and Ahmet Parhat and 佐々木雄一朗 and Bunji Mizuno and takeo hattori and HIROSHI IWAI},
title = {Depth Profiling of Chemical Bonding States of Impurity Atoms and Their Correlation with Electrical Activity in Si Shallow Junctions},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100605245,
author = {A. Uedono and KAZUO TSUTSUI and S. Ishibashi and H. Watanabe and S. Kubota and Y. Nakagawa and Bunji Mizuno and takeo hattori and HIROSHI IWAI},
title = {Vacancy-Boron Complexes in Plasama Immersion lon-lmplanted Si Probed by a Monoenergetic Positron Beam},
booktitle = {Japanese Journal of Applied Physics 49},
year = 2010,
}
@inproceedings{CTT100603765,
author = {神田高志 and 船水清永 and Yueh Chin Lin and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and Edward Yi Chang and 名取研二 and 服部健雄 and 岩井洋},
title = {HfO2/ La2O3/ In0.53 Ga0.47As構造の界面特性の変化},
booktitle = {第57回応用物理学関係連合講演会講演予稿集},
year = 2010,
}
@inproceedings{CTT100603761,
author = {小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {La2O3 MOSデバイスへのアルカリ土類元素キャップによる電気特性の変化},
booktitle = {第57回応用物理学関係連合講演会講演予稿集},
year = 2010,
}
@inproceedings{CTT100603760,
author = {幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {希土類酸化物をキャップすることによるMOSFETの電気特性の改善},
booktitle = {第57回応用物理学関係連合講演会講演予稿集},
year = 2010,
}
@inproceedings{CTT100603759,
author = {小澤健児 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {La2O3 MOSFETへのCeOxキャップによる電気特性の改善},
booktitle = {第57回応用物理学関係連合講演会講演予稿集},
year = 2010,
}
@inproceedings{CTT100603758,
author = {ダリューシュ ザデ and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {界面にLa2O3 絶縁膜層を挿入したHf系high-kゲートMOSFETの評価},
booktitle = {第57回応用物理学関係連合講演会講演予稿集},
year = 2010,
}
@inproceedings{CTT100603756,
author = {来山 大祐 and 小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {来山大祐，小柳友常，角嶋邦之，パールハット アヘメト，筒井一生，西山彰，杉井信之，名取研二，服部健雄，岩井洋“EOT=0.5nm に向けたTaSi2/La2O3/CeOxゲートスタック構造の検討},
booktitle = {第57回応用物理学関係連合講演会講演予稿集},
year = 2010,
}
@inproceedings{CTT100603744,
author = {Wataru Hosoda and Kenji Ozawa and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Fabrication of SB-MOSFETs on SOI Substrate Using Ni Silicide Containing Er Interlayer},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100603745,
author = {AbudukelimuAbudureheman and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and HIROSHI IWAI and takeo hattori and KENJI NATORI},
title = {Performance of Silicon Ballistic Nanowire MOSFET with Diverse Orientations and Diameters},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100603743,
author = {Katuya Matano and Kiyohisa Funamizu and Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Electrical Characteristics of Rare Earth (La, Ce, Pr and Tm) Oxides/Silicates Gate Dielectric},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100603768,
author = {茂森直登 and 新井英朗 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 西山彰 and 筒井一生 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {酸化膜中のSiナノワイヤへのNi拡散の制御},
booktitle = {第57回応用物理学関係連合講演会講演予稿集},
year = 2010,
}
@inproceedings{CTT100603767,
author = {田中正興 and 星野憲文 and 筒井一生 and 野平博司 and 室隆桂之 and 加藤有香子 and 木下豊彦 and パールハットアヘメト and 角嶋邦之 and 服部健雄 and 岩井洋},
title = {光電子分光により検出したSi中のAsおよびPの化学結合状態の評価},
booktitle = {第57回応用物理学関係連合講演会講演予稿集},
year = 2010,
}
@inproceedings{CTT100603766,
author = {川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {酸素添加がWゲートMOSデバイスの電気特性に与える影響},
booktitle = {第57回応用物理学関係連合講演会講演予稿集},
year = 2010,
}
@inproceedings{CTT100630961,
author = {中島一裕 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {Interface state density of 3-D structured Si using charge pumping method},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100630990,
author = {川那子高暢 and 鈴木 拓也 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {An Effective Process for Oxygen Defects Suppression for La-based Oxide Gate Dielectric},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100630991,
author = {小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {Flatband Voltage Shift of La-based Gate Oxides with Alkali-earth-elements Incorporation},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100630992,
author = {金田翼 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {Effect of Rare Earth Oxide Capping for La-based Gate Oxides},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100630993,
author = {マイマイティ マイマイティレャアティ and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 岩井洋},
title = {Remote Coulomb and roughness scatterings in gate oxide scaling},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100630995,
author = {来山大祐 and 小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {Process Optimization of Rare-Earth Oxides Gated MOS Devices for Future EOT Scaling},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100630997,
author = {久保田透 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {Spectroscopic analysis of interface state density in high-k/Si structure},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100631002,
author = {ダリューシュザデ and 神田高志 and 細井隆司 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {Towards High Performance III-V MOSFET, A Study on high-k Gate Stacks on In0.53Ga0.47As},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100631005,
author = {竇春萌 and 向井弘樹 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {Feasibility study of Ce oxide for resistive RAM application},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100630958,
author = {茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 西山彰 and 筒井一生 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {Suppression of Lateral Encroachment of Ni Silicide into Si Nanowires using Nitrogen Incorporation},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100630957,
author = {AbudukelimuAbudureheman and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {The Effect of Scattering in Drain Region of Ballistic Channel Diode},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100630960,
author = {小山将央 and 茂森直登 and 新井英朗 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {Lateral encroachment of Ni silicide into Si nanowire},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100631006,
author = {呉研 and 茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
title = {Observation of Tunneling FET operation in MOSFET with NiSi/Si Schottky source/channel interface},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100597925,
author = {Hiroto Nakayama and Kuniyuki KAKUSHIMA and Ahmet Parhat and E.Ikenaga and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
title = {Crystallographic Orientation Dependent Electrical Characteristics of La2O3 MOS Capacitors},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100597921,
author = {A.Abudukelimu and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Current-Voltage Characteristics of Ballistic Nanowire MOSFET by Numerical Analysis},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100597917,
author = {M.Mamatrishat and Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Study on Remote Coulomb Scattering Limited Mobility in MOSFETs with CeO2/ La2O3 Gate Stacks},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100597907,
author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Experimental Investigation of VFB shift and Effective Mobility in La2O3 MOS Devices},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100597900,
author = {Jaeyeol Song and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
title = {Effect of Ultrathin Si Passivation Layer for La2O3/Ge MOS structure},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100597891,
author = {M.K. Bera and Jaeyeol Song and Ahmet Parhat and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
title = {Rare-earth based mixed oxide as high-k gate dielectrics for Ge MOSFET},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100597775,
author = {Hiroto Nakayama and Kuniyuki KAKUSHIMA and Ahmet Parhat and E.Ikenaga and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
title = {Crystallographic Orientation Dependent Electrical Characteristics of La2O3 MOS Capacitors},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100597769,
author = {Kiyohisa Funamizu and Y.C. Lin and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and E.Y. Chang and takeo hattori and HIROSHI IWAI},
title = {Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100597766,
author = {M.K.Bera and Jaeyeol Song and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
title = {Electrical Properties of Lanthanum-scandate Gate Dielectric Directly Deposited on Ge},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100597764,
author = {Tomotsune Koyanagi and Koichi Okamoto and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and AKIRA NISHIYAMA and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Impact of Alkali Earth Elements Incorporation on Electrical Characteristics of La2O3 Gated MOS Device},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100597761,
author = {Hideaki Arai and Hideyuki Kamimura and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Annealing Reaction for Ni Silicidation of Si Nanowire},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100598270,
author = {Wataru Hosoda and Kenji Ozawa and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {A Study of Schottky Barrier Height Modulation of NiSi by Interlayer Insertion and Its Application to SOI SB-MOSFETs},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100598273,
author = {Katuya Matano and Kuniyuki KAKUSHIMA and Ahmet Parhat and Nobuyuki Sugii and KAZUO TSUTSUI and takeo hattori and HIROSHI IWAI},
title = {Threshold Voltage Control in p-MOSFET with High-k Gate dielectric},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100598275,
author = {Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Influence of Alkali Earth Elements Capping on Electrical Characteristics of La2O3 Gated MOS Device},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100598280,
author = {Yusuke Kobayashi and Kuniyuki KAKUSHIMA and Ahmet Parhat and V.Ramgopal Rao and KAZUO TSUTSUI and HIROSHI IWAI},
title = {Short-channel effects on FinFETs induced by inappropriate fin widths},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100597926,
author = {Hideaki Arai and Hideyuki Kamimura and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and 西山彰 and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Annealing Reaction for Ni Silicidation of Si Nanowire},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100597929,
author = {Kiyohisa Funamizu and Takashi Kanda and Y.C.Lin and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and E.Y.Chang and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100597760,
author = {M.Mamatrishat and Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
title = {Analysis of Remote Coulomb Scattering Limited Mobility in MOSFETs with CeO2/La2O3 Gate Stacks},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100597756,
author = {Kuniyuki KAKUSHIMA and Koichi Okamoto and Tomotsune Koyanagi and Kiichi Tachi and Miyuki Kouda and Takamasa Kawanago and Jaeyeol Song and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
title = {Selection of Rare Earth Silicate with SrO Capping for EOT Scaling below o.5 nm},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100585316,
author = {船水清永 and Yueh-Chin Lin and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and Edward Yi Chang and 服部健雄 and 岩井洋},
title = {High-k ゲート絶縁膜を用いたInxGa1-xAs MOS構造の研究},
booktitle = {第56回応用物理学関係連合講演会予稿集},
year = 2009,
}
@inproceedings{CTT100586589,
author = {Takahiro Nagata and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 知京豊裕 and HIROSHI IWAI},
title = {On the thermal stability of nicket silicides},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100586499,
author = {Takamasa Kawanago and Jaeyeol Song and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
title = {Experimental Study for High Efffective Mobility with directly deposited HfO2/La2O3 MOSFET},
booktitle = {INFOS2009},
year = 2009,
}
@inproceedings{CTT100586498,
author = {Jaeyeol Song and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
title = {Post metallization annealing study in La2O3/Ge MOS structure},
booktitle = {INFOS2009},
year = 2009,
}
@inproceedings{CTT100585291,
author = {岩井洋 and 山田啓作 and 大毛利健二 and 筒井一生 and 角嶋邦之 and パールハットアヘメト and 佐藤創志 and 上村英之 and 新井英朗},
title = {トップダウンSiナノワイヤFETの作製法とその電気的特性のサーベイ},
booktitle = {第56回応用物理学関係連合講演会予稿集},
year = 2009,
}
@inproceedings{CTT100585302,
author = {岩井洋 and 名取研二 and 白石賢二 and 山田啓作 and 大毛利健二 and 筒井一生 and 角嶋邦之 and パールハットアヘメト},
title = {シリコンナノワイヤFET研究の現状とロードマップ作成の考え方},
booktitle = {第56回応用物理学関係連合講演会予稿集},
year = 2009,
}
@inproceedings{CTT100586581,
author = {小柳友常 and 岡本晃一 and 角嶋邦之 and パールハットアヘメト and 杉井信之 and 筒井一生 and 服部健雄 and 岩井洋},
title = {La2O3MOSデバイスへのSrO導入による電気特性の変化},
booktitle = {第56回応用物理学関係連合講演会予稿集},
year = 2009,
}
@inproceedings{CTT100585312,
author = {細田亘 and 野口浩平 and パールハットアヘメト and 角嶋邦之 and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
title = {異種金属界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用},
booktitle = {第56回応用物理学会予稿集},
year = 2009,
}
@inproceedings{CTT100585306,
author = {宋在烈 and 舘喜一 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
title = {極薄Si界面層を挿入したLa2O3/Ge MIS構造における界面準位密度低減に関する検討},
booktitle = {第56回応用物理学関係連合講演会予稿集},
year = 2009,
}
@inproceedings{CTT100586495,
author = {Hideyuki Kamimura and Hideaki Arai and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
title = {Evaluation of Lateral Ni Diffusion in Si Nanowire Schottky Contact},
booktitle = {ISTC /CSTIC2009},
year = 2009,
}
@inproceedings{CTT100585313,
author = {幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
title = {CeO2 /La2O3積層ゲート絶縁膜のリーク電流特性の膜厚依存性},
booktitle = {第56回応用物理学関係連合講演会予稿集},
year = 2009,
}
@inproceedings{CTT100585445,
author = {小林勇介 and 角嶋邦之 and パールハットアヘメト and V.R. Rao and 筒井一生 and 岩井洋},
title = {FinFETの構造ばらつきによるオン電流のばらつきの検討},
booktitle = {第56回応用物理学関係連合講演会予稿集},
year = 2009,
}
@inproceedings{CTT100585442,
author = {星野憲文 and 中川恭成 and 野平博司 and 室 隆桂之 and 加藤 有香子 and 甲斐隆行 and 金成国 and パールハットアヘメト and 角嶋邦之 and 水野文二 and 木下 豊彦 and 筒井一生 and 服部健雄 and 岩井洋},
title = {光電子分光によるSi中Asの化学結合状態評価},
booktitle = {第56回応用物理学関係連合講演会予稿集},
year = 2009,
}
@inproceedings{CTT100585433,
author = {中山寛人 and 日野雅文 and 永田晃基 and 小瀬村大亮 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 小椋厚志 and 服部健雄 and 岩井洋},
title = {As注入とSiN応力膜によるpoly-Siへの歪記憶の検討},
booktitle = {第56回応用物理学関係連合講演会予稿集},
year = 2009,
}
@inproceedings{CTT100585430,
author = {又野克哉 and 川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
title = {Ge層挿入によるLa2O3-MOSキャパシタのVFB制御},
booktitle = {第56回応用物理学関係連合講演会予稿集},
year = 2009,
}
@inproceedings{CTT100585427,
author = {横田知之 and 酒井一憲 and パールハットアヘメト and 筒井一生 and 岩井洋},
title = {反復剥離法による3次元Fin構造中ドーピングプロファイル測定の提案},
booktitle = {第56回応用物理学関係連合講演会予稿集},
year = 2009,
}
@inproceedings{CTT100585426,
author = {新井英朗 and 上村英之 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
title = {SiナノワイヤへのNiシリサイド形成の評価},
booktitle = {第56回応用物理学関係連合講演会予稿集},
year = 2009,
}
@inproceedings{CTT100585423,
author = {佐藤創志 and 上村英之 and 新井英朗 and 角嶋邦之 and パールハットアヘメト and 大毛利健二 and 筒井一生 and 杉井信之 and 服部健雄 and 山田啓作 and 岩井洋},
title = {四端子測定TEGを用いたSiナノワイヤトランジスタのチャネル内電位の測定},
booktitle = {第56回応用物理学関係連合講演会予稿集},
year = 2009,
}
@inproceedings{CTT100586472,
author = {Hiroki Fujisawa and A Srivastava and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and C.K. Sarkar and HIROSHI IWAI},
title = {Electrical Characterization of W/HfO2 MOSFETs with La2O3 Incorporation},
booktitle = {ISTC /CSTIC2009},
year = 2009,
}
@inproceedings{CTT100830567,
author = {H. Nakayama and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and H. Iwai},
title = {Electrical Characteristics of La2O3 Gated MOS Capacitors with Different Wafer Orientation},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100830627,
author = {M. Kouda and K. Tachi and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and A. Chandorkar and T. Hattori and H. Iwai},
title = {Electric Properties of CeOX /La2O3 Stack as Gate Dielectric in Advanced MOSFET Technology},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100830633,
author = {Y. Kobayashi and A. B. Sachid and K. Tsutsui and K. Kakushima and P. Ahmet and V. R. Rao and H. Iwai},
title = {Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100830630,
author = {K. Noguchi and W. Hosoda and K. Matano and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and A. Chandorkar and T. Hattori and H. Iwai},
title = {Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100830629,
author = {K. Okamoto and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and A. Chandorkar and T. Hattori and H. Iwai},
title = {0.5 nm EOT MOS Structure with TaSix/W Stacked Gate Electrode},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100830628,
author = {H. Nohira and Y. Takenaga and K. Kakushima and P. Ahmet and K. Tsutsui and H. Iwai},
title = {Annealing-temperature Dependence of Compositional Depth Profile and Chemical Structures of LaOx/ScOx/Si and ScOx/LaOx/Si Interfacial Transition Layer},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100830626,
author = {K. Kakushima and K. Okamoto and K. Tachi and S. Sato and J. Song and T. Kawanago and P. Ahmet and N. Sugii and K. Tsutsui and T. Hattori and H. Iwai},
title = {Interfacial Dipole Measurement of Dielectric/Silicon Interface by X-ray Photoelectron Spectroscopy},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100830625,
author = {M. Hino and K. Nagata and T. Yoshida and D. Kosemura and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and A. Ogura and T. Hattori and H. Iwai},
title = {Study on Stress Memorization by Argon Implantation and Annealing},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100830569,
author = {B. Mizuno and Y. Sasaki and C. G. Jin and K. Okashita and K. Nakamoto and T. Kitaoka and K. Tsutsui and H. A. Sauddin and H. Iwai},
title = {Production-worthy approach of Plasma Doping (PD)},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100830568,
author = {Parhat Ahmet and Takashi Shiozawa and Koji Nagahiro and Takahiro Nagata and Kuniyuki Kakushima and Kazuo Tsutsui and Toyohiro Chikyow and Hiroshi Iwai},
title = {Ni silicidation on Heavily Doped Si Substrates},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100585114,
author = {中山寛人 and 日野雅文 and 服部健雄 and 杉井信之 and 筒井一生 and パールハットアヘメト and 角嶋邦之 and 小椋厚志 and 永田 晃基 and 吉田 哲也 and 小瀬村大亮 and 岩井洋},
title = {Ar注入とSiN応力膜によるパターン付Si基板への歪記憶技術の検討},
booktitle = {応用物理学会},
year = 2008,
}
@inproceedings{CTT100576524,
author = {川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
title = {La2O3/Si直接接合構造における界面特性の評価},
booktitle = {秋季第69回応用物理学会学術講演会予稿集},
year = 2008,
}
@inproceedings{CTT100576519,
author = {小柳友常 and 岡本晃一 and 角嶋邦之 and パールハットアヘメト and 杉井信之 and 筒井一生 and 服部健雄 and 岩井洋},
title = {La203系MOSFETへのMg挿入による電気特性の変化},
booktitle = {秋季第69回応用物理学会学術講演会予稿集},
year = 2008,
}
@inproceedings{CTT100576517,
author = {新井英朗 and 上村英之 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 服部健雄 and 杉井信之 and 岩井洋},
title = {熱酸化によるSi ナノワイヤの作製とその電気特性},
booktitle = {応用物理学会学術講演会予稿集},
year = 2008,
}
@inproceedings{CTT100830637,
author = {K. Kakushima and K. Tachi and M. Adachi and K. Okamoto and S. Sato and J. Song and T. Kawanago and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and H. Iwai},
title = {Advantage of La2O3 Gate Dielectric Over HfO2 for Direct Contact and Mobility Improvment},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100830635,
author = {K. Tsutsui and M. Watanabe and Y. Nakagawa and T. Matsuda and Y. Yoshida and E. Ikenaga and K. Kakushima and P. Ahmet and H. Nohira and T. Maruizumi and A. Ogura and T. Hattori and H. Iwai},
title = {New Analysis of Heavily Doped Boron and Arsenic in Shallow Junctions by X-Ray Photoelectron Spectroscopy},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100830634,
author = {Y. Kobayashi and K. Tsutsui and K. Kakushima and P. Ahmet and V. R. Rao and H. Iwai},
title = {Analysis of Threshold Voltage Variations of FinFETs : Separation of Short Channel Effects and Space Charge Effects},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100585094,
author = {船水清永 and 幸田みゆき and 舘喜一 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
title = {CeOX/La2O3積層ゲート絶縁膜構造の膜特性評価},
booktitle = {秋季第69回応用物理学会学術講演会予稿集},
year = 2008,
}
@inproceedings{CTT100585126,
author = {小林勇介 and 角嶋邦之 and パールハットアヘメト and ラオ ラムゴパル and 筒井一生 and 岩井洋},
title = {FinFETの閾値変動における短チャネル効果による影響の切り分け},
booktitle = {秋季第69回応用物理学会学術講演会予稿集},
year = 2008,
}
@inproceedings{CTT100585122,
author = {又野克哉 and 野口 浩平 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
title = {Hf層界面挿入によるNiシリサイドのショットキー障壁変調技術},
booktitle = {秋季第69回応用物理学会学術講演会予稿集},
year = 2008,
}
@inproceedings{CTT100585118,
author = {細田亘 and 野口浩平 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
title = {Er層界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用},
booktitle = {秋季第69回応用物理学会学術講演会予稿集},
year = 2008,
}
@inproceedings{CTT100585117,
author = {酒井一憲 and 中川恭成 and 横田知之 and 金成国 and 岡下勝己 and 佐々木雄一朗 and パールハットアヘメト and 角嶋邦之 and 水野文二 and 服部健雄 and 筒井一生 and 岩井洋},
title = {3次元Fin構造中不純物プロファイリングのための反復犠牲酸化エッチング},
booktitle = {秋季第69回応用物理学会学術講演会予稿集},
year = 2008,
}
@inproceedings{CTT100570713,
author = {Takao Oshita and Kazuo Tsutsui and Noboru Ishihara and Kazuya Masu},
title = {Scaling Trend of Analog Integrated Circuit with Process Variations on Future Ultra Deep Submicron CMOS Technology},
booktitle = {International Conference on Solid State Devices and Materials (SSDM)},
year = 2008,
}
@inproceedings{CTT100585100,
author = {佐藤創志 and 上村英之 and 新井英朗 and 大毛利健二 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 服部健雄 and 杉井信之 and 山田啓作 and 岩井洋},
title = {Si Finのアスペクト比最適化により作製した円形Siナノワイヤの形状に関する研究},
booktitle = {秋季第69回応用物理学会学術講演会予稿集},
year = 2008,
}
@inproceedings{CTT100585107,
author = {中川恭成 and 野平博司 and 酒井一憲 and 横田 知之 and 甲斐 隆行 and 金成国 and パールハットアヘメト and 角嶋邦之 and 水野文二 and 服部健雄 and 筒井一生 and 岩井洋},
title = {光電子分光によるSi中Asの活性化状態の深さ方向分布評価},
booktitle = {応用物理学会},
year = 2008,
}
@inproceedings{CTT100830655,
author = {K. Kakushima and K. Okamoto and M. Adachi and K. Tachi and S. Sato and T. Kawanago and J. Song and P. Ahmet and N. Sugii and K. Tsutsui and T. Hattori and H. Iwai},
title = {Impact of Thin La2O3 Insertion for HfO2 MOSFET},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100830643,
author = {Kazuo Tsutsui and Masamitsu Watanabe and Yasumasa Nakagawa and Kazunori Sakai and Takayuki Kai and Cheng-Guo Jin and Yuichiro Sasaki and Kuniyuki Kakushima and Parhat Ahmet and Bunji Mizuno and Takeo Hattori and Hiroshi Iwai.},
title = {Profiling of Carrier Properties for Shallow Junctions Using a New Sub-nanometer Step-by-step Etching Technique},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100830650,
author = {K. Tsutsui and T. Shiozawa and K. Nagahiro and Y. Ohishi and K. Kakushima and P. Ahmet and N. Urushihara and M. Suzuki and H. Iwai},
title = {Effects of B or Al Interface Layers on Thermal Stability of Ni Silicide on Si},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100830659,
author = {Yoshisa Ohishi and Kohei Noguchi and Kuniyuki Kakushima and Parhat Ahmet and Kazuo Tsutsui and Nobuyuki Sugii and Takeo Hattori and Hiroshi Iwai},
title = {Schottky Barrier Height Modulation of Ni Silicide/Si Contacts by Insertion of Thin Er or Pt Layers},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100576379,
author = {宋在烈 and 舘喜一 and 岡本晃一 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
title = {Laシリケート層を界面に用いたhigh-k/Si MOS構造の電気特性検討},
booktitle = {春季第55回応用物理学会学術講演会予稿集},
year = 2008,
}
@inproceedings{CTT100567354,
author = {舘喜一 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
title = {Sub-1.0nm EOTにおけるW／La2O3ゲートスタックｎMOSFETの電子移動度解析},
booktitle = {春季第55回応用物理学会学術講演会予稿集},
year = 2008,
}
@inproceedings{CTT100576381,
author = {岡本晃一 and 舘喜一 and 足立学 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 杉井信之 and 筒井一生 and 服部健雄 and 岩井洋},
title = {Hf O2系 High-kゲートMOSFETの電気特性に対するLa2O3界面層挿入効果},
booktitle = {春季第55回応用物理学会学術講演会 予稿集},
year = 2008,
}
@inproceedings{CTT100576382,
author = {幸田みゆき and 舘喜一 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
title = {CeO2/La2O3積層ゲート絶縁膜の電気特性評価},
booktitle = {春季第55回応用物理学会学術講演会予稿集},
year = 2008,
}
@inproceedings{CTT100576383,
author = {野口浩平 and 大石善久 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
title = {Er層界面挿入によるNiシリサイドのショットキー障壁変調技術},
booktitle = {春季第55回応用物理学会学術講演会予稿集},
year = 2008,
}
@inproceedings{CTT100576388,
author = {日野雅文 and 吉田哲也 and 小瀬村 大亮 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 小椋 厚志 and 服部健雄 and 岩井洋},
title = {SiN応力膜によるSi基板への歪記憶の検討},
booktitle = {春季第55回応用物理学会学術講演会予稿集},
year = 2008,
}
@inproceedings{CTT100567350,
author = {パールハット アヘメト and 筒井一生 and 角嶋邦之 and 杉井 信之 and 知京 豊裕 and 服部健雄 and 長田 貴弘 and 岩井洋},
title = {高濃度n+-Si 及びp+-Si基板上のNiシリサイドの熱安定性の違い},
booktitle = {春季第55回応用物理学会学術講演会予稿集},
year = 2008,
}
@inproceedings{CTT100576380,
author = {足立学 and 岡本晃一 and 舘喜一 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
title = {HfO2/ La2O3積層キャパシタにおけるLa2O3層に依存した界面層成長抑制の効果},
booktitle = {春季第55回応用物理学会学術講演会予稿集},
year = 2008,
}
@inproceedings{CTT100576391,
author = {上村英之 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 大毛利 健二 and 服部健雄 and 岩井洋},
title = {熱酸化によるSiナノワイヤ形状の酸化条件依存性},
booktitle = {春季第55回応用物理学会学術講演会予稿集},
year = 2008,
}
@inproceedings{CTT100576403,
author = {小林 勇介 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and V.R. Rao and 岩井洋},
title = {FinFETにおけるショートチャンネル効果のフィン幅依存症},
booktitle = {春季第55回応用物理学会学術講演会予稿集},
year = 2008,
}
@inproceedings{CTT100576432,
author = {酒井一憲 and 渡邉将光 and 中川恭成 and 金 成国 and 岡下 勝己 and 佐々木雄一朗 and パールハットアヘメト and 角嶋邦之 and 水野 文二 and 服部健雄 and 筒井一生 and 岩井洋},
title = {極浅接合プロファイリングのための反復犠牲酸化エッチング技術},
booktitle = {春季第55回応用物理学会学術講演会予稿集},
year = 2008,
}
@inproceedings{CTT100599410,
author = {K. Tsutsui and T. Oshita and S. Watanabe and M. Maeda},
title = {Growth of Fluoride Quantum Well Heterostructures for Resonant Tunneling Devices on Si Substrates},
booktitle = {ECS Transaction},
year = 2008,
}
@inproceedings{CTT100544687,
author = {日野雅文 and 角嶋 邦之 and パールハット アヘメト and 筒井 一生 and 杉井 信之 and 服部 健雄 and 岩井 洋},
title = {HfO2/ La2O3のゲート絶縁膜を用いたSi-MOSFETの電気特性},
booktitle = {秋季第68回応用物理学会学術講演会},
year = 2007,
}
@inproceedings{CTT100830660,
author = {Kuniyuki Kakushima and Kouichi Okamoto and Manabu Adachi and Kiichi Tachi and Jaeyeol Song and Soushi Sato and Takamasa Kawanago and Parhat Ahmet and Kazuo Tsutsui and Nobuyuki Sugii and Takeo Hattori and Hiroshi Iwai},
title = {Band Bending Measurement of HfO2/SiO2/Si Capacitor with ultra-thin La2O3 Insertion by XPS},
booktitle = {},
year = 2007,
}
@inproceedings{CTT100544402,
author = {K.Tachi and K.Kakushima and P.Ahmet and K.Tsutsui and N.Sugii and T.Hattori and H.Iwai},
title = {Improvement of Interface Properties of W/La2O3/Si MOS Structure Usin AI Capping Layer},
booktitle = {ECS Transactions},
year = 2007,
}
@inproceedings{CTT100544401,
author = {M.Adachi and K.Okamoto and K.Kakushima and P.Ahmet and K.Tsutsui and N.Sugii and T.Hattori and H.Iwai},
title = {Control of Flat Band Voltage by Partial Incorporation of La2O3 or Sc2O3 into MfO2 in Metal/MfO2/SiO2/Si MOS Capacitors},
booktitle = {ECS Transactions:Physics and Technology of High-k Gate Dielectrics 5},
year = 2007,
}
@inproceedings{CTT100544403,
author = {K.Tsutsui and K.Nagahiro and T.Shiozawa and P.Ahmet and K.Kakushima and H.Iwai},
title = {Improvement of Thermal Stability of Ni Silcide by Additive Metals with Specific Introduction Processes},
booktitle = {ECS Transactions:ULSI Process Integration 5},
year = 2007,
}
@inproceedings{CTT100544410,
author = {小林勇介 and 角嶋邦之 and パールハット・アヘメト and V. R. ラオ and 筒井一生 and 岩井洋},
title = {ダブルゲート型およびプレーナー型MOSFETにおける構造バラつきの影響の比較検討},
booktitle = {秋季第68回応用物理学会学術講演会予稿集},
year = 2007,
}
@inproceedings{CTT100544407,
author = {上村 英之 and 足立 学 and 角嶋 邦之 and パールハット アヘメト and 筒井 一生 and 杉井 信之 and 服部 健雄 and 岩井 洋},
title = {HfO2/SiO2 界面へのSc2O3 添加によるフラットバンド電圧シフト},
booktitle = {秋季第68回応用物理学会学術講演会予稿集},
year = 2007,
}
@inproceedings{CTT100544408,
author = {岡本晃一 and 足立学 and 角嶋邦之 and パールハット・アヘメト and 杉井信之 and 筒井一生 and 服部健雄 and 岩井洋},
title = {HfO2/Si 界面へのLa2O3 サブモノレイヤー添加による電気特性の変化},
booktitle = {秋季第68回応用物理学会学術講演会予稿集},
year = 2007,
}
@inproceedings{CTT100544685,
author = {宋在烈 and 角嶋邦之 and パールハット・アヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
title = {La2O3/Ge MIS 構造における微量Si 界面層導入による電気特性の変化},
booktitle = {秋季第68回応用物理学会学術講演会},
year = 2007,
}
@inproceedings{CTT100544409,
author = {藤澤 宏樹 and 舘 喜一 and 角嶋 邦之 and パールハット・アヘメト and 筒井 一生 and 杉井 信之 and 服部 健雄 and 岩井 洋},
title = {Alキャップ層がW/La2O3/Si MOS構造の電気特性に及ぼす影響},
booktitle = {秋季第68回応用物理学会学術講演会予稿集},
year = 2007,
}
@inproceedings{CTT100544405,
author = {[320] Koichi Okamoto and Manabu Adachi and Kuniyuki Kakushima and Parhat Ahmet and Nobuyuki Sugii and Kazuo Tsutsui and Takeo Hattori and Hiroshi Iwai},
title = {Effective Control of Flat-band Voltage in HfO2 Gate Dielectric with La2O3 Incorporation},
booktitle = {},
year = 2007,
}
@inproceedings{CTT100544406,
author = {幸田みゆき and 川那子高暢 and 角嶋邦之 and パールハット・アヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
title = {Sc2O3ゲート絶縁膜のリーク電流機構の解析},
booktitle = {秋季第68回応用物理学会学術講演会 講演予稿集},
year = 2007,
}
@inproceedings{CTT100599990,
author = {佐藤創志 and 舘喜一 and 宋在烈 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
title = {ラジカル窒化によるLa2O3ゲート絶縁膜への窒素導入効果 : 堆積時窒化によるEOT増加抑制効果（ゲート絶縁膜、容量膜、機能幕及びメモリ技術）},
booktitle = {電子情報通信学会技術研究報告、SDM、シリコン材料・デバイス},
year = 2007,
}
@inproceedings{CTT100830663,
author = {Takashi Shiozawa and Koji Nagahiro and Kazuo Tsutsui and Parhat Ahmet and Kuniyuki Kakushima and Hiroshi Iwai},
title = {Improvement of Thermal Stability of Ni Silicide by Al Interlayer Deposition},
booktitle = {},
year = 2007,
}
@inproceedings{CTT100830662,
author = {Y. Kobayashi and K. Tsutsui and K. Kakushima and V. Hariharan and V. R. Rao and P. Ahmet and H. Iwai},
title = {Parasitic Effects Depending on Shape of Spacer Region on FinFETs},
booktitle = {},
year = 2007,
}
@inproceedings{CTT100533619,
author = {小林勇介 and 筒井一生 and 角嶋邦之 and V. Hariharan and V.R. Rao and パールハットアヘメト and 岩井洋},
title = {FinFETのSpacer領域形状変化のデバイス特性への影響},
booktitle = {春季第54回応用物理学会学術講演会予稿集},
year = 2007,
}
@inproceedings{CTT100528726,
author = {Parhat Ahmet and Kuniyuki Kakushima and Kazuo Tsutsui and Nobuyuki Sugii and Takeo Hattori and Hiroshi Iwai},
title = {La-based oxides for High-k Gate Dielectric Application},
booktitle = {2006 8th International Conference on Solid-State and Integrated-Circuit Technology Proceedings},
year = 2006,
}
@inproceedings{CTT100528741,
author = {K. Nagahiro and K. Tsutsui and T. Shiozawa and R. Xiang and P. Ahmet and K. Kakushima and Y. Okuno and M. Matsumoto and M. Kubota and H. Iwai},
title = {Thermal Stability of NiSi Controlled by Post Silicidation Metal Doping Method},
booktitle = {2006 8th International Conference on Solid-State and Integrated-Circuit Technology Proceedings},
year = 2006,
}
@inproceedings{CTT100528720,
author = {Kazuo Tsutsui and So Watanabe and Motoki Maeda and Tsuyoshi Sugisaki and Yohei Toriumi},
title = {Resonant Tunneling Diodes on Si Substrates Using Fluoride Heterostructures and Feasibility of Application to Integrated Circuits},
booktitle = {2006 8th International Conference on Solid-State and Integrated-Circuit Technology Proceedings},
year = 2006,
}
@inproceedings{CTT100830711,
author = {K. Tachi and H. Iwai and T. Hattori and N. Sugii and K. Tsutsui and P. Ahemt and K. Kakushima},
title = {Effect of Oxygen for Ultra-Thin La2O3 Film Deposition},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100830712,
author = {J. Molina and K. Tachi and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and I. Hiroshi},
title = {Charge Trapping Characteristics of W-La2O3-nSi Mis Capacitors After Post-Metallization Annealing PMA in N2},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100830713,
author = {Y. Shiino and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and H. Iwai},
title = {La2O3 Gate Dielectric Thin Film with Sc2O3 Buffer Layer for High Temperature Annealing},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100830714,
author = {H. Sauddin and Y. Sasaki and H. Ito and B. Mizuno and P. Ahmet and K. Kakushima and N. Sugii and K. Tsutsui and H. Iwai},
title = {Leakage Current Characteristics of Ultra-Shallow Junctions formed by B2H6 Plasma Doping},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100830716,
author = {H. Nohira and T. Matsuda and K. Tachi and Y. Shiino and J. Song and Y. Kuroki and J. Ng and P. Ahmet and K. Kakushima and K. Tsutsui and E. Ikenaga and K. Kobayashi and H. Iwai and T. Hattori},
title = {Effect of Deposition Temperature on Thermal Stability of Lanthanum Oxide/Si Interfacial Transition Layer},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100528715,
author = {Kazuo Tsutsui and So Watanabe and Tsuyoshi Sugisaki and Yohei Toriumi and Motoki Maeda},
title = {Fluoride Resonant Tunneling Diodes using Lattice-Matched Buffer Layers on Si Substrates},
booktitle = {ESSDERC2006},
year = 2006,
}
@inproceedings{CTT100528612,
author = {渡邉 聡 and 三浦 圭 and 斉藤格広 and 前田元輝 and 筒井一生},
title = {CaxCd1-xF2混晶バリアを用いた非対称弗化物共鳴トンネルダイオードの検討},
booktitle = {第67回応用物理学会学術講演会予稿集},
year = 2006,
}
@inproceedings{CTT100528620,
author = {角嶋邦之 and アヘメトパールハット and 筒井一生 and 岩井 洋},
title = {La2O3の次世代ゲート絶縁膜への応用},
booktitle = {第67回応用物理学会学術講演会予稿集},
year = 2006,
}
@inproceedings{CTT100528615,
author = {齋藤格広 and 前田元輝 and 渡邉 聡 and 筒井一生},
title = {弗化物共鳴トンネルデバイス縦方向集積のためのCaF2バッファ層ポスト酸化の検討},
booktitle = {第67回応用物理学会学術講演会予稿集},
year = 2006,
}
@inproceedings{CTT100528580,
author = {川那子高暢 and 椎野泰洋 and ヘンドリアンシャーサウッディン and 角嶋邦之 and アヘメトパールハット and 筒井一生 and 杉井信之 and 服部健雄 and 岩井 洋},
title = {Sc2O3ゲート絶縁膜を用いたMISFETの作製と特性評価},
booktitle = {第67回応用物理学会学術講演会予稿集},
year = 2006,
}
@inproceedings{CTT100528590,
author = {佐藤創志 and 舘 喜一 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井 洋},
title = {La2O3膜電子ビーム蒸着時の酸素供給による熱安定性向上効果},
booktitle = {第67回応用物理学会学術講演会予稿集},
year = 2006,
}
@inproceedings{CTT100528591,
author = {岡本晃一 and 宋 在烈 and 福山 享 and 角嶋邦之 and アヘメトパールハット and 杉井信之 and 筒井一生 and 服部健雄 and 岩井 洋},
title = {La2O3 MIMキャパシタの電気特性の熱処理依存性},
booktitle = {第67回応用物理学会学術講演会予稿集},
year = 2006,
}
@inproceedings{CTT100528609,
author = {濱島英孝 and 渡邉 聡 and 前田元輝 and 筒井一生},
title = {Si基板上SrxCd1-xF2混晶の成長特性とその共鳴トンネルデバイスへの応用},
booktitle = {第67回応用物理学会学術講演会予稿集},
year = 2006,
}
@inproceedings{CTT100528603,
author = {小林勇介 and Hariharan V. and 角島邦之 and 筒井一生 and 岩井 洋 and Rao V.R.},
title = {FinFETの寄生効果低減の為のゲート-ソース/ドレイン間素子形状の最適化},
booktitle = {第67回応用物理学会学術講演会予稿集},
year = 2006,
}
@inproceedings{CTT100528599,
author = {足立 学 and 永廣侯治 and 塩澤崇史 and パールハットアヘメト and 角嶋邦之 and 筒井一生 and 岩井 洋},
title = {異種金属のPSMD(モノシリサイド形成後金属添加)法によるNiSiの耐熱性向上},
booktitle = {第67回応用物理学会学術講演会予稿集},
year = 2006,
}
@inproceedings{CTT100528598,
author = {大石善久 and 永廣侯治 and 塩澤崇史 and パールハットアヘメト and 角嶋邦之 and 筒井一生 and 岩井 洋},
title = {Al層界面挿入によるNi+-Si基板上Niシリサイドの耐熱性向上},
booktitle = {第67回応用物理学会学術講演会予稿集},
year = 2006,
}
@inproceedings{CTT100528596,
author = {松田 徹 and 野平博司 and 池永英司 and 小林勇介 and 金 成国 and 岡下勝巳 and 佐々木雄一朗 and 伊藤裕之 and 角嶋邦之 and 筒井一生 and 水野文二 and 岩井 洋 and 服部健雄},
title = {プラズマドープしたボロンの化学結合形態とその深さ方向分布のSpike RTAによる変化},
booktitle = {第67回応用物理学会学術講演会予稿集},
year = 2006,
}
@inproceedings{CTT100528606,
author = {両角康宏 and 小林勇介 and 角嶋邦之 and アヘメトパールハット and 筒井一生 and 杉井信之 and 岩井 洋},
title = {High-k膜を用いた三次元トランジスタの数値解析},
booktitle = {第67回応用物理学会学術講演会予稿集},
year = 2006,
}
@inproceedings{CTT100528706,
author = {Kazuo Tsutsui and So Watanabe and Tsuyoshi Sugisaki and Yohei Toriumi and Motoki Maeda},
title = {Resonant Tunneling Diodes Formed by Fluoride Heterostructures for Co-Integration with CMOS Devices},
booktitle = {2006 IEEE Silicon Nanoelectronics Workshop},
year = 2006,
}
@inproceedings{CTT100528697,
author = {Kazuo Tsutsui and Ruifei Xiang and Koji Nagahiro and Takashi Shiozawa and Parhat Ahmet and Yasutoshi Okuno and Michikazu Matsumoto and Masafumi Kubota and Kuniyuki Kakushima and Hiroshi Iwai},
title = {Irregular Increase in Sheet Resistance of Ni Silicides at Temperature Range of Transition from NiSi to NiSi2},
booktitle = {Ext. Abstract of The 6th International Workshop on Junction Technology},
year = 2006,
}
@inproceedings{CTT100528562,
author = {塩澤崇史 and 項 瑞飛 and 永廣侯治 and アヘメトパールハット and 角嶋邦之 and 筒井一生 and 岩井 洋 and 奥野泰利 and 松元道一 and 久保田正文},
title = {NiSiからNiSi2への相転移温度領域におけるシート抵抗増加特性の評価},
booktitle = {第53回応用物理学関係連合講演会予稿集},
year = 2006,
}
@inproceedings{CTT100528563,
author = {永廣侯治 and 項 瑞飛 and 塩澤崇史 and パールハットアハメト and 角嶋邦之 and 筒井一生 and 岩井 洋 and 奥野泰利 and 松元道一 and 久保田正文},
title = {Niシリサイド形成における異種金属積層添加効果の検討},
booktitle = {第53回応用物理学関係連合講演会予稿集},
year = 2006,
}
@inproceedings{CTT100528565,
author = {小林勇介 and Hariharan Venkatnarayan and 角島邦之 and 筒井一生 and 岩井 洋 and Rao Ramgopal},
title = {FinFETのゲート-ソース/ドレイン間寄生効果の素子形状依存性},
booktitle = {第53回応用物理学関係連合講演会予稿集},
year = 2006,
}
@inproceedings{CTT100528567,
author = {中川昌幸 and 吉崎智史 and 宋 在烈 and 張 偉源 and 奈良安雄 and 安平光雄 and 大塚文雄 and 有門経敏 and 中村邦雄 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 青木 均 and 岩井 洋},
title = {Sub-100 nm High-k MOSFETの高周波歪み特性},
booktitle = {第53回応用物理学関係連合講演会予稿集},
year = 2006,
}
@inproceedings{CTT100528572,
author = {齋藤格広 and 前田元輝 and 渡辺 聡 and 筒井一生},
title = {Si基板上に縦方向集積した弗化物共鳴トンネルデバイスの研究},
booktitle = {第53回応用物理学関係連合講演会予稿集},
year = 2006,
}
@inproceedings{CTT100528654,
author = {Ruifei Xiang and Koji Nagahiro and Takashi Shiozawa and Parhat Ahmet and Kazuo Tsusui and Yasutoshi Okuno and Michikazu Matsumoto and Masafumi Kubota and Kuniyuki Kakushima and Hiroshi Iwai},
title = {Irregular Increase in Sheet Resistance of Ni Silicides at Transition Temperature Range from NiSi to NiSi2 Depending on Annealing Time},
booktitle = {Semiconductor Technology (ISTC2006), The Electrochemical Society Inc.},
year = 2006,
}
@inproceedings{CTT100528573,
author = {濱島英孝 and 前田元輝 and 渡邉 聡 and 筒井一生},
title = {Si上弗化物共鳴トンネル素子におけるSrxCd1-xF2混晶井戸層の提案},
booktitle = {第53回応用物理学関係連合講演会予稿集},
year = 2006,
}
@inproceedings{CTT100528650,
author = {Kazuo Tsutsui and Yuichiro Sasaki and Cheng-Guo Jin and Hideki Tamura and Katsumi Okashita and Hiroyuki Ito and Bunji Mizuno and Hendriansyah Sauddin and Kenta Majima and Takahisa Satoh and Yotaro Fukagawa and Kuniyuki Kakushima and Hiroshi Iwai},
title = {Formation of Ultra-Shallow Junctions by Plasma Doping},
booktitle = {Semiconductor Technology (ISTC2006) The Electrochemical Society Inc.},
year = 2006,
}
@inproceedings{CTT100528545,
author = {野平博司 and 松田 徹 and 舘 喜一 and 椎野泰洋 and 宋 在烈 and 黒木裕介 and ン ジン アン and パールハットアヘメト and 角嶋邦之 and 筒井一生 and 池永英司 and 小林啓介 and 岩井 洋 and 服部健雄},
title = {LaOX/Si界面組成遷移層の熱安定性},
booktitle = {第53回応用物理学関係連合講演会予稿集},
year = 2006,
}
@inproceedings{CTT100528553,
author = {椎野泰洋 and 中川健太郎 and 角嶋邦之 and パールハットアへメト and 杉井信之 and 服部健雄 and 筒井一生 and 岩井 洋},
title = {La2O3/Sc2O3積層構造ゲート絶縁膜による耐熱性向上に関する検討},
booktitle = {第53回応用物理学関係連合講演会予稿集},
year = 2006,
}
@inproceedings{CTT100528645,
author = {Issui Aiba and Cheng-Guo Jin and Yuichiro Sasaki and Kazuo Tsutsui and Hideki Tamura and Katsumi Okashita and Hiroyuki Ito and Bunji Mizuno and Parhat Ahmet and Kuniyuki Kakushima and Hiroshi Iwai},
title = {Photo Resist Removal Process Using Wet Treatment after Plasma Doping},
booktitle = {Semiconductor Technology (ISTC2006), The Electrochemical Society Inc.},
year = 2006,
}
@inproceedings{CTT100528556,
author = {舘 喜一 and 黒木裕介 and 黄 仁安 and 角嶋邦之 and パールハットアハメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井 洋},
title = {La2O3-nMISFET電気特性の金属微量添加による効果},
booktitle = {第53回応用物理学関係連合講演会予稿集},
year = 2006,
}
@inproceedings{CTT100528559,
author = {宋 在烈 and 福山 享 and 角嶋邦之 and アヘメトパールハット and 筒井一生 and 杉井信之 and 服部健雄 and 岩井 洋},
title = {熱処理におけるLa2O3/n-Ge(100)界面のXPS分析},
booktitle = {第53回応用物理学関係連合講演会予稿集},
year = 2006,
}
@inproceedings{CTT100830665,
author = {Y. Sasaki and H. Ito and K. Okashita and H. Tamura and C. G. Jin and B. Mizuno and T. Okumura and I. Aiba and Y. Fukagawa and H. Sauddin and K. Tsutsui and H. Iwai},
title = {Production-worthy USJ formation by self-regulatory plasma doping method},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100406711,
author = {So Watanabe and Yohei Toriumi and Motoki Maeda Tsuyoshi Sugisaki and Kazuo Tsutsui},
title = {Fluoride Resonant Tunneling Diodes on Si Substrates},
booktitle = {Proc. of 2005 International Semiconductor Device Research Symposium},
year = 2005,
}
@inproceedings{CTT100406712,
author = {Sauddin Hendriansyah and 田村秀貴 and 岡下勝己 and 佐々木雄一朗 and 伊藤裕之 and 水野文二 and 角嶋邦之 and 筒井一生 and 岩井洋},
title = {プラズマドーピング法で形成したメサ型p+/n接合の逆方向電流の評価},
booktitle = {第66回応用物理学会学術連合講演会予稿集},
year = 2005,
}
@inproceedings{CTT100406718,
author = {大前譲治 and 前田元輝 and 杉崎剛 and 渡邉聡 and 筒井一生},
title = {弗化物ヘテロデバイス集積化に向けたCdF2分子線によるSi基板表面改質法},
booktitle = {第66回応用物理学会学術連合講演会予稿集},
year = 2005,
}
@inproceedings{CTT100406714,
author = {松田徹 and 野平博司 and 池永英司 and 相庭一穂 and 深川洋太郎 and 田村英貴 and 岡下勝巳 and 金成国 and 佐々木雄一朗 and 伊藤裕之 and 角嶋邦之 and 筒井一生 and 水野文二 and 岩井洋 and 服部健雄},
title = {シリコン表面近傍にプラズマドープしたボロン原子の化学結合状態},
booktitle = {第66回応用物理学会学術連合講演会予稿集},
year = 2005,
}
@inproceedings{CTT100406715,
author = {松土夏子 and 前田元輝 and 渡邉聡 and 筒井一生},
title = {Si基板上エピタキシャルCaxMg1-xF2混晶超薄膜の電気的特性},
booktitle = {第66回応用物理学会学術連合講演会予稿集},
year = 2005,
}
@inproceedings{CTT100406716,
author = {杉崎剛 and 渡辺聡 and 前田元輝 and 筒井一生},
title = {Si(100)基板V溝上の弗化物混晶系共鳴トンネルダイオードの作製},
booktitle = {第66回応用物理学会学術連合講演会予稿集},
year = 2005,
}
@inproceedings{CTT100406710,
author = {So Watanabe and Tsuyoshi Sugisaki and Yohei Toriumi and Motoki Maeda and Kazuo Tsutsui},
title = {Fabrication of Fluoride Resonant Tunneling Diodes on V-grooved Si(100) Substrates},
booktitle = {Ext. Abs. of 2005 Int. Conf. on Solid State Devices and Materials},
year = 2005,
}
@inproceedings{CTT100406717,
author = {斎藤格広 and 渡邉聡 and 前田元輝 and 筒井一生},
title = {弗化物多層構造による縦方向集積共鳴トンネルデバイスの製作},
booktitle = {第66回応用物理学会学術連合講演会予稿集},
year = 2005,
}
@inproceedings{CTT100406713,
author = {深川洋太郎 and 相庭一穂 and 小林勇介 and 田村秀貴 and 岡下勝己 and 佐々木雄一朗 and 水野文二 and 筒井一生 and 角嶋邦之 and 岩井洋},
title = {プラズマドーピングで形成したp+層の極浅化に伴う電気伝導特性の変化},
booktitle = {第66回応用物理学会学術連合講演会予稿集},
year = 2005,
}
@inproceedings{CTT100406705,
author = {Motoki Maeda and Natsuko Matsudo and So Watanabe and Kazuo Tsutsui},
title = {Study on crystalline structure of CaxMg1-xF2 alloy composed of cubic fluorite CaF2 and tetragonal rutile MgF2 on Si},
booktitle = {Abstract book of 13th International Congress on Thin Films},
year = 2005,
}
@inproceedings{CTT100406709,
author = {Natsuko Matsudo and Motoki Maeda and So Watanabe and Kazuo Tsutsui},
title = {Epitaxial Growth of CaxMg1-xF2 Alloy for Fluoride Ultra-Thin Heterostructures on Si Substrates},
booktitle = {Abstract of 47th Annual TMS Electronic Materials Conference},
year = 2005,
}
@inproceedings{CTT100406699,
author = {H. Sauddin and H. Tamura and K. Okashita and Y. Sasaki and H. Ito and B. Mizuno and K. Kakushima and K. Tsutsui and H. Iwai},
title = {Reverse Current of Plasma Doped p+ /n Ultra-Shallow Junction},
booktitle = {Ext. Abs. of 5th International Workshop on Junction Technology},
year = 2005,
}
@inproceedings{CTT100406696,
author = {K. Tsutsui and K. Majima and Y. Fukagawa and Y. Sasaki and K. Okashita and H. Tamura and K. Kakushima and H. Ito and B. Mizuno and H. Iwai},
title = {Analysis of Conductivity in Ultra-shallow p+ Layers Formed by Plasma Doping},
booktitle = {Ext. Abs. of 5th International Workshop on Junction Technology},
year = 2005,
}
@inproceedings{CTT100406693,
author = {I. Aiba and Y. Sasaki and K. Okashita and H. Tamura and Y. Fukagawa and K. Tsutsui and H. Ito and K. Kakushima and B. Mizuno and H. Iwai},
title = {Feasibility Study of Plasma Doping on Si Substrates with Photo-Resist Patterns},
booktitle = {Ext. Abs. of 5th International Workshop on Junction Technology},
year = 2005,
}
@inproceedings{CTT100830718,
author = {Youichi Kobayashi and Ruifei Xiang and Kazuo Tsutsui and Hiroshi Iwai},
title = {Formation of heat resistant Ni silicide by additional Hf layers},
booktitle = {},
year = 2005,
}
@inproceedings{CTT100830719,
author = {Y. Kim and A. Kuriyama and I. Ueda and S. Ohmi and K. Tsutsui and H. Iwai},
title = {Electrical Characteristics of High-k La2O3 Thin Film Deposited by E-Beam Evaporation Method},
booktitle = {},
year = 2003,
}
@inproceedings{CTT100492673,
author = {Yongshik Kim and Atsushi Kuriyama and Isao Ueda and Shun-ichiro OHMI and Kazuo Tsutsui and HIROSHI IWAI},
title = {Analysis of Electrical Characteristics of La2O3 Thin Film Annealed in Vacuum and Others},
booktitle = {},
year = 2003,
}
@inproceedings{CTT100492671,
author = {Ryota Higaki and Kazuo Tsutsui and Yuichiro Sasaki and Sadahiro Akama and Bunji Mizuno and Shun-ichiro OHMI and HIROSHI IWAI},
title = {Effect of gas phase absorption into Si substrates on plasma doping process},
booktitle = {},
year = 2003,
}
@inproceedings{CTT100493970,
author = {Motoki Maeda and So Watanabe and Kazuo Tsutsui},
title = {Resonant Tunneling Devices on Si(111) Substrates Using Fluoride Alloy Heterostructures},
booktitle = {},
year = 2003,
}
@inproceedings{CTT100830721,
author = {Y. Sasaki and B. Mizuno and S. Akama and R. Higaki and K. Tsutsui and S. Ohmi and H. Iwai},
title = {Helicon Wave Plasma Doping System},
booktitle = {},
year = 2002,
}
@inproceedings{CTT100830720,
author = {Y. Sasaki and B. Mizuno and S. Akama and R. Higaki and K. Tsutsui and S. Ohmi and H. Iwai},
title = {Gas Phase Doping at Room Temperature},
booktitle = {},
year = 2002,
}
@inproceedings{CTT100830722,
author = {Ikmi Kashiwagi and Chizuru Ohshima and Yongshik Kim and Shun-ichiro Ohmi and Kazuo Tsutsui and Hiroshi Iwai},
title = {Dependence of Gd2O3 Thin Film Properties on Si Substrate Orienteation},
booktitle = {},
year = 2002,
}
@inproceedings{CTT100831020,
author = {Motoki Maeda and Hiroshi Kambayashi and So Watanabe and Kazuo Tsutsui},
title = {Fluoride Resonant Tunneling Diodes Using Cd-rich CaxCd1-xF2/CaF2 Heterostructures on Si Substrates},
booktitle = {},
year = 2002,
}
@inproceedings{CTT100831019,
author = {Kazuo Tsutsui and Hiroshi Sekine and Motoki Maeda and So Watanabe},
title = {Fluoride Resonant Tunneling Diodes for Co-integration with Si Devices},
booktitle = {},
year = 2002,
}
@inproceedings{CTT100461398,
author = {Kazuo Tsutsui and Toshiaki Terayama and Hiroshi Sekine and Hiroshi Kambayashi},
title = {Fluoride Resonant Tunneling Diodes Co-integrated with Si-MOSFETs},
booktitle = {},
year = 2001,
}
@inproceedings{CTT100831017,
author = {Kazuo Tsutsui and Toshiaki Terayama and Hiroshi Sekine and Patrick Le Maitre and Hiroshi Kambayashi},
title = {Fluoride-Si Resonant Tunneling Diodes Co-integrated with Si- MOSFETs},
booktitle = {},
year = 2001,
}
@inproceedings{CTT100831016,
author = {Hiroshi Kambayashi and Takuji Gotoh and Hiroshi Maeda and Kazuo Tsutsui},
title = {Growth Characteristics of CaxCd1-xF2 Films on Si Substrates Using CaF2 Buffer Layer},
booktitle = {},
year = 2001,
}
@inproceedings{CTT100461013,
author = {Patrick Le Maitre and Toshiaki Terayama and Kazuo Tsutsui},
title = {Simulation of an SRAM cell using co-integration of fluoride-based resonant tunneling diodes and Si- MOSFET},
booktitle = {},
year = 2001,
}
@inproceedings{CTT100831018,
author = {Kazuo Tsutsui and Hiroshi Kambayashi and Hiroshi Maeda},
title = {Growth of CaxCd1-xF2 alloy on Si substrates using very thin CaF2 buffer layer},
booktitle = {},
year = 2001,
}
@inproceedings{CTT100444641,
author = {F. Hirabayashi and S. Yamada and KOJI KAWASAKI and K. Tsutsui},
title = {Dot arrays fabricated by electron beam site control method and its application to single electron devices},
booktitle = {},
year = 2000,
}
@inproceedings{CTT100830726,
author = {Koji Kawasaki and Daisuke Yamazaki and Kazuo Tsutsui and Yoshinobu Aoyagi},
title = {Control of formation sites of self-assembling GaN dots by focused electron beam exposure},
booktitle = {},
year = 1999,
}
@inproceedings{CTT100830728,
author = {K. Tsutsui and A. Himura and M. Mochizuki and K. Kawasaki},
title = {High density metal dot array formed by electron beam induced nucleation method},
booktitle = {},
year = 1999,
}
@inproceedings{CTT100830828,
author = {K. Tsutsui and K. Kawasaki and M. Mochizuki and T. Matsubara},
title = {Site controlled metal and semiconductor quantum dots on epitaxial fluoride films},
booktitle = {},
year = 1998,
}
@inproceedings{CTT100830824,
author = {Koji Kawasaki and M. Mochizuki and Kazuo Tsutsui},
title = {Single electron transistors formed by self-ordering metal nanodroplet arrays on epitaxial CaF2 film},
booktitle = {},
year = 1998,
}
@inproceedings{CTT100830822,
author = {Koji Kawasaki and Kazuo Tsutsui},
title = {Surface free energy modification of CaF2 by atomic-height island formation on heteroepitaxy of GaAs on CaF2},
booktitle = {},
year = 1997,
}
@inproceedings{CTT100830820,
author = {Koji Kawasaki and Jun Takeshita and Kazuo Tsutsui},
title = {Multi-tunneling junctions of metal droplets formed on CaF2 step edges by self-assembling manner},
booktitle = {},
year = 1997,
}
@inproceedings{CTT100830819,
author = {Mohanmad Musutafa Sarinanto and Yoji Yamaguchi and Kazuo Tsutsui},
title = {Study of thin ZnSe buffer layer for growth of GaAs on CaF2/Si(111) heterostructure},
booktitle = {},
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title = {半導体装置及びその製造方法},
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@phdthesis{CTT100594096,
author = {KAZUO TSUTSUI},
title = {アルカリ土類金属弗化物を用いた化合物半導体SOI構造のヘテロエピタキシーに関する研究},
school = {東京工業大学},
year = 1986,
}