@book{CTT100589431,
  author = {Hei Wong and Kenji Shiraishi and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {High-K Gate Dielectrics},
  publisher = {Pan Stanford Publishing Pte. Ltd.},
  year = 2009,
}

@article{CTT100918360,
  author = {An Li and Takuya Hoshii and Kazuo Tsutsui and Hitoshi Wakabayashi and Kuniyuki Kakushima},
  title = {Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO2 gate dielectric with H2O plasma},
  journal = {Japanese Journal of Applied Physics},
  year = 2024,
}

@article{CTT100918374,
  author = {Gen Nakada and Yoshiharu Kihara and Akira Yasui and Kuniyuki KAKUSHIMA and Hiroshi Nohira},
  title = {Estimation of the band alignment of metal/AlScN interfaces by hard X-ray photoelectron spectroscopy},
  journal = {Japanese Journal of Applied Physics},
  year = 2024,
}

@article{CTT100918393,
  author = {Tomoya Tsutsumi and Kazuki Goshima and Yoshiharu Kirihara and Tatsuki Okazaki and Akira Yasui and Mitani Yuichiro and Kuniyuki KAKUSHIMA and Hiroshi Nohira},
  title = {Effects of plasma oxidation and plasma nitridation on chemical bonding state of AlScN evaluated by AR-HAXPES},
  journal = {},
  year = 2024,
}

@article{CTT100918404,
  author = {Yukimura Tokita and Takuya Hoshii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA},
  title = {Identification of compressive strain in thin ferroelectric Al1–xScxN films by Raman spectroscopy},
  journal = {Japanese Journal of Applied Physics},
  year = 2024,
}

@article{CTT100911397,
  author = {Reika Ota and Shinnosuke Yasuoka and Ryoichi Mizutani and Takahisa Shiraishi and Kazuki Okamoto and Kuniyuki Kakushima and Tomoyuki Koganezawa and Osami Sakata and Hiroshi Funakubo},
  title = {Scalable ferroelectricity of 20-nm-thick (Al0.8Sc0.2)N thin films sandwiched between TiN electrodes},
  journal = {J. Appl. Phys.},
  year = 2023,
}

@article{CTT100896542,
  author = {Masaki Otomo and Masaya Hamada and Ryo Ono and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Chemical states of PVD-ZrS2 film underneath scaled high-k film with self-oxidized ZrO2 film as interfacial layer},
  journal = {Japanese Journal of Applied Physics},
  year = 2023,
}

@article{CTT100896543,
  author = {Takamasa Kawanago and Ryosuke Kajikawa and Kazuto Mizutani and Sung-Lin Tsai and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact},
  journal = {IEEE Journal of the Electron Devices Society},
  year = 2022,
}

@article{CTT100882668,
  author = {Iriya Muneta and Takanori Shirokura and Pham Nam Hai and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure},
  journal = {Scientific Reports},
  year = 2022,
}

@article{CTT100881315,
  author = {Taiga Horiguchi and Takuya Hamada and Masaya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
  title = {Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100874628,
  author = {M. Nishizawa and T. Hoshii and H. Wakabayashi and K. Tsutsui and Yoshiaki Daigo and Ichiro Mizushima and T. Yoda and K. Kakushima},
  title = {Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100883067,
  author = {Si-Meng Chen and Sung Lin Tsai and Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Edward Yi Chang and Kuniyuki KAKUSHIMA},
  title = {GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100874956,
  author = {Hei Wong and Kuniyuki KAKUSHIMA},
  title = {On the Vertically Stacked Gate-All-Around Nanosheet and Nanowire Transistor Scaling beyond the 5 nm Technology Node},
  journal = {Nanomaterials},
  year = 2022,
}

@article{CTT100875619,
  author = {Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Tien-Kan Chung and Edward Yi Chang and Kuniyuki Kakushima},
  title = {Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@article{CTT100880933,
  author = {Atsuki Miyata and Takuya Hoshii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA},
  title = {Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100883068,
  author = {Ryota Shibukawa and Sung Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA},
  title = {Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100875614,
  author = {Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Edward Y. Chang and Kuniyuki Kakushima},
  title = {Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@article{CTT100875615,
  author = {Takamasa KAWANAGO and Takahiro Matsuzaki and Ryosuke Kajikawa and Iriya Muneta and Takuya HOSHII and Kuniyuki Kakushima and Kazuo TSUTSUI and Hitoshi WAKABAYASHI},
  title = {Experimental demonstration of high-gain CMOS Inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@article{CTT100875618,
  author = {Takuya Hamada and Masaya Hamada and Taiga Horiguchi and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
  title = {High Seebeck Coefficient in PVD-WS2 Film with Grain-Size Enlargement},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@article{CTT100875617,
  author = {Ryo Ono and Shinya Imai and Yuta Kusama and Takuya Hamada and Masaya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Emi Kano and Nobuyuki Ikarashi and Hitoshi Wakabayash},
  title = {Elucidation of PVD MoS2 Film Formation Process and its Structure Focusing on Sub-Monolayer Region},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@article{CTT100875613,
  author = {Takuya Hamada and Masaya Hamada and Satoshi Igarashi and Taiga Horiguchi and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
  title = {WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET with TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box},
  journal = {Journal of the Electron Devices Society (J-EDS)},
  year = 2021,
}

@article{CTT100883072,
  author = {Hei Wong and Jieqiong Zhang and HIROSHI IWAI and Kuniyuki KAKUSHIMA},
  title = {Characteristic Variabilities of Subnanometer EOT La2O3 Gate Dielectric Film of Nano CMOS Devices},
  journal = {Nanomaterials},
  year = 2021,
}

@article{CTT100855460,
  author = {Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Tien-Kan Chung and Edward Yi Chang and Kuniyuki Kakushima},
  title = {On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films},
  journal = {Japanese Journal of Applied Physics (JJAP) （SSDM特集号）},
  year = 2021,
}

@article{CTT100855459,
  author = {S-L. Tsai and T. Hoshii and H. Wakabayashi and K. Tsutsui and T-K. Chung and E. Chang and K. Kakushima},
  title = {Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering},
  journal = {Applied Physics Letters},
  year = 2021,
}

@article{CTT100855476,
  author = {Junji Kataoka and Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {A possible origin of the large leakage current in ferroelectric Al1-xScxN films},
  journal = {Japanese Journal of Applied Physics (JJAP) (Rapid Communication)},
  year = 2021,
}

@article{CTT100855475,
  author = {Jinhan Song and Atsuhiro Ohta and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer},
  journal = {Japanese Journal of Applied Physics (JJAP) (Rapid Communication)},
  year = 2021,
}

@article{CTT100855464,
  author = {Shinya Imai and Takuya Hamada and Masaya Hamada and Takanori Shirokura and Iriya Muneta and Kuniyuki Kakushima and Tetsuya Tatsumi and Shigetaka Tomiya and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Importance of Crystallinity Improvement in MoS2 film just after MoS2-Compound Sputtering even followed by Post Sulfurization for Chip-Size Fabrication},
  journal = {Japanese Journal of Applied Physics (JJAP) （SSDM特集号）},
  year = 2021,
}

@article{CTT100855471,
  author = {Masaya Hamada and Kentaro Matsuura and Takuya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {ZrS2 Symmetrical-Ambipolar FETs with Near-Midgap TiN Film for Both Top-Gate electrode and Schottky-Barrier Contact},
  journal = {Japanese Journal of Applied Physics (JJAP) （SSDM特集号）},
  year = 2021,
}

@article{CTT100855473,
  author = {Takuya Hamada and Shigetaka Tomiya and Tetsuya Tatsumi and Masaya Hamada and Taiga Horiguchi and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Sheet Resistance Reduction of MoS2 Film using Sputtering and Chlorine Plasma Treatment followed by Sulfur Vapor Annealing},
  journal = {Journal of the Electron Devices Society (J-EDS)},
  year = 2021,
}

@article{CTT100855467,
  author = {Satoshi Igarashi and Yusuke Mochiduki and Haruki Tanigawa and Masaya Hamada and Kentaro Matsuura and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Self-Aligned-TiSi2 Bottom Contact with APM Cleaning and Post-annealing for Sputtered-MoS2 Film},
  journal = {Japanese Journal of Applied Physics (JJAP) （SSDM特集号）},
  year = 2021,
}

@article{CTT100855585,
  author = {Masaya Hamada and Kentaro Matsuura and Takuro Sakamoto and Haruki Tanigawa and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Sulfurization even through Al2O3 Passivation Film Simultaneously Preventing Oxidation},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2020,
}

@article{CTT100855454,
  author = {Kentaro Matsuura and Masaya Hamada and Takuya Hamada and Haruki Tanigawa and Takuro Sakamoto and Atsushi Hori and Iriya Muneta and Takamasa Kawanago and Kuniyuki Kakushima and Kazuo},
  title = {Normally-off sputtered-MoS2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration},
  journal = {Japanese Journal of Applied Physics (JJAP) (Rapid Communication)},
  year = 2020,
}

@article{CTT100822931,
  author = {Kiyoshi Takeuchi and Munetoshi Fukui and Takuya Saraya and Kazuo Itou and Toshihiko Takakura and Shinichi Suzuki and Yohichiroh Numasawa and Naoyuki Shigyo and Kuniyuki Kakushima and Takuya Hoshii and Kazuyoshi Furukawa and Masahiro Watanabe and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Atsushi Ogura and Wataru Saito and Shin-ichi Nishizawa and Masanori Tsukuda and Ichiro Omura and Hiromichi Ohashi and Toshiro Hiramoto},
  title = {Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs},
  journal = {IEEE Trans. On Semiconductor Manufactureing},
  year = 2020,
}

@article{CTT100828639,
  author = {Haruki Tanigawa and Kentaro Matsuura and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Enhancement-Mode Accumulation Capacitance-Voltage Characteristics in TiN/ALD-Al2O3/Sputtered-MoS2 Top-Gated Stacks},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2020,
}

@article{CTT100828640,
  author = {Jinan Song and Lyu Wei Lin and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {Atomic Layer Deposition of Y2O3 Thin Films with a High Growth per Cycle by Ar Multiple Boost Injection},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2020,
}

@article{CTT100822932,
  author = {Takuya Saraya and Kazuo Itou and Toshihiko Takakura and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Kuniyuki Kakushima and Takuya Hoshii and Kazuo Tsutsui and Hiroshi Iwai and Shin-ichi Nishizawa and Ichiro Omura and Toshiro Hiramoto},
  title = {Impact of Structural Parameter Scaling on On-state Voltage in 1200V Scaled IGBTs},
  journal = {Japanese Journal of Applied Physics},
  year = 2020,
}

@article{CTT100822934,
  author = {Tomohiko Yamagishi and Atsushi Hori and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Self-Heating-Aware Cell Design for p/n-Vertically-Integrated Nanowire on FinFET beyond 3-nm Technology Node},
  journal = {Japanese Journal of Applied Physics},
  year = 2020,
}

@article{CTT100822933,
  author = {Joel Molina-Reyes and Takuya Hoshii and Shun-Ichiro Ohmi and Hiroshi Funakubo and Atsushi Hori and Ichiro Fujiwara and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films},
  journal = {Japanese Journal of Applied Physics},
  year = 2020,
}

@article{CTT100821138,
  author = {Joel Molina-Reyes and Takuya Hoshii and Shun-Ichiro Ohmi and Hiroshi Funakubo and Atsushi Hori and Ichiro Fujiwara and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films},
  journal = {Jpn. J. Appl. Phys.},
  year = 2020,
}

@article{CTT100813951,
  author = {Masaya Hamada and Kentaro Matsuura and Takuro Sakamoto and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film using UHV RF Magnetron Sputtering and Sulfurization},
  journal = {Journal of the Electron Devices Society (J-EDS)},
  year = 2019,
}

@article{CTT100828638,
  author = {Kuan Ning Huang and Yueh-Chin Lin and Jia Ching Lin and Chia Chieh Hsu and Jin Hwa Lee and Chia-Hsun Wu and Jing Neng Yao and Heng-Tung Hsu and Venkatesan Nagarajan and Kuniyuki Kakushima and Kazuo Tsutsui and Hiroshi Iwai and Edward Yi Chang and Chao Hsin Chien},
  title = {Study of E-mode AlGaN/GaN MIS-HEMT with La-silicate gate insulator for power applications},
  journal = {Journal of Electronic Materials},
  year = 2019,
}

@article{CTT100808596,
  author = {Takanori Shirokura and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Strong edge-induced ferromagnetism in sputtered MoS2 film treated by post-annealing},
  journal = {Applied Physics Letters},
  year = 2019,
}

@article{CTT100809862,
  author = {Takuya Hoshii and Akira Nakajima and Shin-ichi Nishizawa and Hiromichi Ohashi and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and KAZUO TSUTSUI},
  title = {Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates},
  journal = {Japanese Journal of Applied Physics},
  year = 2019,
}

@article{CTT100813953,
  author = {Eisuke Anju and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM Layout},
  journal = {Journal of the Electron Devices Society (J-EDS)},
  year = 2018,
}

@article{CTT100782443,
  author = {K. Matsuura and J. Shimizu and M. Toyama and T. Ohashi and I. Muneta and S. Ishihara and K. Kakushima and K. Tsutsui and A. Ogura and H. Wakabayashi},
  title = {Sputter-Deposited-MoS2 nMISFETs with Top-Gate and Al2O3 Passivation under Low Thermal Budget for Large Area Integration},
  journal = {IEEE Journal of the Electron Devices Society},
  year = 2018,
}

@article{CTT100795209,
  author = {J. Shimizu and T. Ohashi and K. Matsuura and I. Muneta and K. Kakushima and K. Tsutsui and N. Ikarashi and H. Wakabayashi and N. Ikarashi},
  title = {Low-Temperature MoS2 Film Formation using Sputtering and H2S Annealing},
  journal = {Journal of the Electron Devices Society},
  year = 2018,
}

@article{CTT100780938,
  author = {M. Toyama and T. Ohashi and K. Matsuura and J. Shimizu and I. Muneta and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {Ohmic Contact between Titanium and Sputtered MoS2 Films achieved by Forming-Gas Annealing},
  journal = {JPN J APPL PHYS},
  year = 2018,
}

@article{CTT100813954,
  author = {Yiming Lei and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Masayuki Furuhashi and Shingo Tomohisa and Satoshi Yamakawa and Kuniyuki Kakushima},
  title = {Effect of Lanthanum Silicate Interface Layer on the Electrical Characteristics of 4H-SiC Metal-Oxide-Semiconductor Capacitors},
  journal = {Microelectronics Reliability},
  year = 2018,
}

@article{CTT100813955,
  author = {Yiming Lei and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Masayuki Furuhashi and Shingo Tomohisa and Satoshi Yamakaw and Kuniyuki Kakushima},
  title = {Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing},
  journal = {Microelectronics Reliability},
  year = 2018,
}

@article{CTT100786664,
  author = {Akira Nakajima and Shunsuke Kubota and Kazuo Tsutsui and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai and Shin-ichi Nishizawa and Hiromichi Ohashi},
  title = {GaN-based CMOS Inverter with Normally-off P- and N-channel MOSFETs in GaN/AlGaN/GaN Platform},
  journal = {IET Power Electronics},
  year = 2018,
}

@article{CTT100780937,
  author = {N. Hayakawa and Iriya Muneta and Takumi Ohashi and Kenntarou Matsuura and Junnichi Shimizu and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and Hitoshi Wakabayashi},
  title = {Reduction of conductance mismatch in Fe/Al2O3/MoS2 system by tunneling-barrier thickness control},
  journal = {Japan Journal of Applied Physics},
  year = 2018,
}

@article{CTT100780936,
  author = {K. Matsuura and T. Ohashi and I. Muneta and S. Ishihara and K. Kakushima and K. Tsutsui and A. Ogura and H. Wakabayashi},
  title = {Low-Carrier-Density Sputter-MoS2 Film by Vapor-Phase Sulfurization},
  journal = {Journal of Electrical Materials},
  year = 2018,
}

@article{CTT100786663,
  author = {Kazuo Tsutsui and Tomohiro Matsushita and Kotaro Natori and Takayuki Muro and Yoshitada Morikawa and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kouichi Hayashi and Fumihiko Matsui and Toyohiko Kinoshita},
  title = {Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography},
  journal = {Nano Letters},
  year = 2017,
}

@article{CTT100786665,
  author = {Yueh Chin Lin and Yu Xiang Huang and Gung Ning Huang and Chia Hsun Wu and Jing Neng Yao and Chung Ming Chu and Shane Chang and Chia Chieh Hsu and Jin Hwa Lee and Kuniyuki Kakushima and Kazuo Tsutsui and Hiroshi Iwai and Edward Yi Chang},
  title = {Enhancement-Mode GaN MIS-HEMTs with LaHfOx Gate Insulator for Power Application},
  journal = {IEEE Electron Device Letters},
  year = 2017,
}

@article{CTT100830482,
  author = {"K. Kakushima" and "T. Seki" and "H. Wakabayashi" and "K. Tsutsui" and "H. Iwai"},
  title = {Infrared spectroscopic analysis of reactively formed La-silicate interface layer at La2O3/Si substrates},
  journal = {Vacuum},
  year = 2017,
}

@article{CTT100765856,
  author = {Takumi Ohashi and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness},
  journal = {Applied Physics Express},
  year = 2017,
}

@article{CTT100830080,
  author = {"Jun’ichi Shimizu" and "Takumi Ohashi" and "Kentaro Matsuura" and "Iriya Muneta" and "Kuniyuki Kakushima" and "Kazuo Tsutsui" and "Hitoshi Wakabayashi"},
  title = {High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for Three-dimensional ICs},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2017,
}

@article{CTT100830486,
  author = {"R. Miyazawa" and "H. Wakabayashi" and "K. Tsutsui" and "H. Iwai" and "K. Kakushima"},
  title = {Photovoltaic Characteristics of Ultra-thin Single Crystalline Silicon Solar Cells},
  journal = {International Journal of High Speed Electronics and Systems (IJHSES)},
  year = 2016,
}

@article{CTT100830087,
  author = {"J. Chen" and "H. Wakabayashi" and "K. Tsutsui" and "H. Iwai" and "K. Kakushima"},
  title = {Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current},
  journal = {Microelectronic Reliability},
  year = 2016,
}

@article{CTT100830088,
  author = {"M.S. Hadi" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "H. Iwai" and "K. Kakushima"},
  title = {Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes},
  journal = {Microelectronics Reliability},
  year = 2016,
}

@article{CTT100830495,
  author = {"Tomoyuki Suzuki" and "Hitoshi Wakabayashi" and "Kazuo Tsutsui" and "Hiroshi Iwai" and "Kuniyuki Kakushima"},
  title = {Laminated Mo/C Electrodes for 4H-SiC Schottky Barrier Diodes with Ideal Characteristics},
  journal = {IEEE Electron Device Letters (EDL)},
  year = 2016,
}

@article{CTT100786666,
  author = {Yusuke Takei and Kazuo Tsutsui and Wataru Saito and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai},
  title = {Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high electron mobility transistors},
  journal = {Japanese Journal of Applied Physics},
  year = 2016,
}

@article{CTT100830094,
  author = {"J. Chen" and "T. Kawanago" and "H. Wakabayashi" and "K. Tsutsui" and "H. Iwai" and "D. Nohata" and "H. Nohira" and "K. Kakushima"},
  title = {La2O3 gate dielectrics for AlGaN/GaN HEMT},
  journal = {Microelectronics Reliability},
  year = 2016,
}

@article{CTT100759551,
  author = {T. Ohashi and K. Suda and S. Ishihara and N. Sawamoto and S. Yamaguchi and K. Matsuura and K. Kakushima and N. Sugii and A. Nishiyama and Y. Kataoka and K. Natori and K. Tsutsui and H. Iwai and A. Ogura and H. Wakabayashi},
  title = {Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs},
  journal = {Japan Journal of Applied Physics},
  year = 2015,
}

@article{CTT100830498,
  author = {"Yusuke Takei" and "Masayuki Kamiya" and "Kazuo Tsutsui" and "Wataru Saito" and "Kuniyuki Kakushima" and "Hitoshi Wakabayashi" and "Yoshinori Kataoka" and "Hiroshi Iwai"},
  title = {Reduction of Contact Resistance on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers},
  journal = {Physica Status Solidi A},
  year = 2015,
}

@article{CTT100830371,
  author = {"Mokh Hadi" and "Shinichi Kano" and "Kuniyuki Kakushima" and "Yoshinori Kataoka" and "Akira Nishiyama" and "Nobuyuki Sugii" and "Hitoshi Wakabayashi" and "Kazuo Tsutsui" and "Kenji Natori" and "Hiroshi Iwai"},
  title = {A resistive switching device based on breakdown and anodic reoxidization of thin SiO2 on Si-based Electrodes using CeOx buffer layer},
  journal = {Semiconductor Science and Technology},
  year = 2014,
}

@article{CTT100830384,
  author = {"Y. Wu" and "H. Hasegawa" and "K. Kakushima" and "K. Ohmori" and "T. Watanabe" and "A. Nishiyama" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "Y. Kataoka" and "K. Natori" and "K. Yamada" and "H. Iwai"},
  title = {A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability},
  journal = {Microelectronics Reliability},
  year = 2014,
}

@article{CTT100830372,
  author = {"Yusuke Takei" and "Mari Okamoto" and "Wataru Saito" and "Kazuo Tsutsui" and "Kuniyuki Kakushima" and "Hitoshi Wakabayashi" and "Yoshinori Kataoka" and "Hiroshi Iwai"},
  title = {Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures},
  journal = {ECS Transactions},
  year = 2014,
}

@article{CTT100830585,
  author = {"Chunmeng Dou" and "Tomoya Shoji" and "Kazuhiro Nakajima" and "Kuniyuki Kakushima" and "Parhat Ahmet" and "Yoshinori Kataoka" and "Akira Nishiyama" and "Nobuyuki Sugii" and "Hitoshi Wakabayashi" and "Kazuo Tsutsui" and "Kenji Natori" and "Hiroshi Iwai"},
  title = {Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement},
  journal = {Microelectronics Reliability},
  year = 2014,
}

@article{CTT100830499,
  author = {"T. Kawanago" and "K. Kakushima" and "Y. Kataoka" and "A. Nishiyama" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "K. Natori" and "H. Iwai"},
  title = {Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT},
  journal = {IEEE Transaction on Electron Devices(T-ED)},
  year = 2014,
}

@article{CTT100830501,
  author = {"K. Tuokedaerhan" and "K. Kakushima" and "Y. Kataoka" and "A. Nishiyama" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "K. Natori" and "H. Iwai"},
  title = {Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain},
  journal = {Applied Physics Letters (APL)},
  year = 2014,
}

@article{CTT100658744,
  author = {Miranda Enrique and Takamasa Kawanago and Kuniyuki KAKUSHIMA and J.Sune and HIROSHI IWAI},
  title = {Modeling of the output characteristics of advanced n-MOSFETs after a severe gate-to-channel dielectric breakdown},
  journal = {[Microelectronic Engineering},
  year = 2013,
}

@article{CTT100830612,
  author = {"K. Tuokedaerhan" and "R. Tan and K. Kakushima" and "P. Ahmet" and "Y. Kataoka" and "A. Nishiyama" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "K. Natori" and "T. Hattori" and "H. Iwai"},
  title = {Stacked sputtering process for Ti, Ta, and W carbide formation for gate metal application},
  journal = {Applied Physics Letters (APL)},
  year = 2013,
}

@article{CTT100658807,
  author = {Miranda Enrique and Takamasa Kawanago and Kuniyuki KAKUSHIMA and J. Sune and HIROSHI IWAI},
  title = {Analysis and Simulation of the Postbreakdown I-V Characteristics of n-MOS Transistors in the Linear Response Regime},
  journal = {IEEE ELECTRON DEVICE LETTERS},
  year = 2013,
}

@article{CTT100658805,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and takeo hattori and Kenji Natori and HIROSHI IWAI},
  title = {Comparative study of electrical characteristics in(100) and (110)surface-oriented nMOSFETs with direct contact La-silicate/Si interface structure},
  journal = {Solid-State Electronics},
  year = 2013,
}

@article{CTT100658723,
  author = {DARYOUSH ZADEH and Hiroshi Oomine and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and Hiroshi Nohira and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode},
  journal = {Solid-State Electronics},
  year = 2013,
}

@article{CTT100658722,
  author = {Y. Wu and 竇春萌 and F. Wei and Kuniyuki KAKUSHIMA and 大毛利健治 and パールハットアヘメト and T. Watanabe and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and Keisaku Yamada and 片岡好則 and takeo hattori and HIROSHI IWAI},
  title = {Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability},
  journal = {Japanese Journal of Applied Physics},
  year = 2013,
}

@article{CTT100658725,
  author = {Miranda Enrique and shinichi kano and 竇春萌 and J. Sune and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Effect of an ultrathin SiO2 interfacial layer on the hysteretic current-voltage characteristics of CeOx-based metal-insulator-metal structures},
  journal = {Thin Solid Films},
  year = 2013,
}

@article{CTT100709250,
  author = {Tadashi Ishida and Kuniyuki Kakushima and Hiroyuki Fujita},
  title = {Degradation Mechanisms of Contact Point during Switching Operation of MEMS Switch},
  journal = {JOURNAL OF MICROELECTROMECHANICAL SYSTEMS},
  year = 2013,
}

@article{CTT100647718,
  author = {Miyuki Kouda and 鈴木 拓也 and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI and 安田哲二},
  title = {Electrical Properties of CeO2/La2O3 Stacked Gate Dielectrics Fabricated by Chemical Vapor Deposition and Atomic Layer Deposition},
  journal = {Japanese Journal of Applied Physics},
  year = 2012,
}

@article{CTT100647720,
  author = {H Wong and B.L. Yang and S. Dong and HIROSHI IWAI and Kuniyuki KAKUSHIMA and Ahmet Parhat},
  title = {Current conduction and stability of CeO2/La2O3 stacked gate dielectric},
  journal = {APPLIED PHYSICS LETTERS},
  year = 2012,
}

@article{CTT100709491,
  author = {Tadashi Ishida and Kuniyuki KAKUSHIMA and Teruyasu Mizoguchi and Hiroyuki Fujita},
  title = {Role of dislocation movement in the electrical conductance of nanocontacts},
  journal = {Scientific Reports},
  year = 2012,
}

@article{CTT100647714,
  author = {S.-L. Siu and W.-S. Tam and H Wong and C.-W. Kok and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Influence of multi-finger layout on the subthreshold behavior of nanometer MOS transistors},
  journal = {Microelectronics Realiability},
  year = 2012,
}

@article{CTT100647712,
  author = {B.L. Yang and H Wong and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Improving the electrical characteristics of MOS transistors with CeO2/ La2O3 stacked gate dielectric},
  journal = {Microelectronics Realiability},
  year = 2012,
}

@article{CTT100647654,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs},
  journal = {Solid-State Electronics},
  year = 2012,
}

@article{CTT100647652,
  author = {マイマイティ マイマイティレャアティ and 久保田透 and 関拓也 and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 片岡好則 and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Oxide and interface trap densities estimation in ultrathin W/ La2O3/Si MOS capacitors},
  journal = {Microelectronics Reliability},
  year = 2012,
}

@article{CTT100647651,
  author = {unknown unknown and W. Yasenjiang and Kuniyuki KAKUSHIMA and Ahmet Parhat and M. Geni and Kenji Natori and HIROSHI IWAI},
  title = {Influence of strained drain on performance of ballistic channel devices},
  journal = {Semiconductor Science and Technology},
  year = 2012,
}

@article{CTT100647648,
  author = {Yeonghun Lee and Kuniyuki KAKUSHIMA and Kenji Natori and HIROSHI IWAI},
  title = {Gate Capacitance Modeling and Diamater-Drpendent Performance of Nanowire MOSFETs},
  journal = {IEEE Transactions on Electron Deviices},
  year = 2012,
}

@article{CTT100647591,
  author = {マイマイティ マイマイティレャアティ and Miyuki Kouda and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Ahmet Parhat and 片岡好則 and 西山彰 and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Valance number transition and silicate formation of cerrium oxide on Si(100)},
  journal = {Vacuum},
  year = 2012,
}

@article{CTT100647649,
  author = {C. Dou and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer},
  journal = {Microelectronics Reliability},
  year = 2012,
}

@article{CTT100647650,
  author = {W. Feng and R. Hettiarachchi and Soshi Sato and Kuniyuki KAKUSHIMA and M. Niwa and HIROSHI IWAI and Keisaku Yamada and Kenji Ohmori},
  title = {Advantages of Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties},
  journal = {Japanese Journal of Applied Physics},
  year = 2012,
}

@article{CTT100647590,
  author = {マイマイティ マイマイティレャアティ and Miyuki Kouda and Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 片岡 好則 and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {The effect of remote Coulomb scattering on electron mobility in La2O3 gate stacked MOSFETs},
  journal = {Semiconductor Science and Technology},
  year = 2012,
}

@article{CTT100647588,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Covalent Nature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal2},
  journal = {IEEE ELECTRON DEVICE LETTERS},
  year = 2012,
}

@article{CTT100647576,
  author = {H Wong and B.L. Yang and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI},
  title = {Properties of CeOx/La2O3 gate dielectric and its effects on the MOS transistor characteristics},
  journal = {Vacuum},
  year = 2012,
}

@article{CTT100647587,
  author = {H.D. Trinh and Yueh-Chin Lin and H.C. Wang and C.H. Chang and Kuniyuki KAKUSHIMA and HIROSHI IWAI and Takamasa Kawanago and Y.G. Lin and C.M. Chen and Y.Y.Wong and G.N. Huang and M. Hudait and E.Y. Chang},
  title = {Effect of Postdeposition, Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO2 on n-InAs/InGaAs Metal-Oxide-Semiconductor Capacitors},
  journal = {Applied Physics Express},
  year = 2012,
}

@article{CTT100647577,
  author = {H Wong and B.L. Yang and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI},
  title = {Effects of aluminum doping on lanthanum oxide gate dielectric films},
  journal = {Vacuum},
  year = 2012,
}

@article{CTT100647573,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature},
  journal = {IEEE Transactions on Electron Devices},
  year = 2012,
}

@article{CTT100647574,
  author = {Takamasa Kawanago and 鈴木 拓也 and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process},
  journal = {Solid-State Electronics},
  year = 2012,
}

@article{CTT100647717,
  author = {Miranda Enrique and shinichi kano and C. Dou and Kuniyuki KAKUSHIMA and J. Sune and HIROSHI IWAI},
  title = {Nonlinear conductance quantization effects in CeO/SiO-based resistive switching devices},
  journal = {APPLIED PHYSICS LETTERS},
  year = 2012,
}

@article{CTT100647716,
  author = {Miranda Enrique and Takamasa Kawanago and Kuniyuki KAKUSHIMA and J. Sune and HIROSHI IWAI},
  title = {Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown},
  journal = {Microelectronics Reliability},
  year = 2012,
}

@article{CTT100647572,
  author = {Soshi Sato and Kuniyuki KAKUSHIMA and Kenji Ohmori and KENJI NATORI and Keisaku Yamada and HIROSHI IWAI},
  title = {Electrical characteristics of asymmetrical silicon nanowire field-effect transistors},
  journal = {APPLIED PHYSICS LETTERS},
  year = 2011,
}

@article{CTT100647571,
  author = {Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and Kenji Ohmori and KENJI NATORI and Keisaku Yamada and HIROSHI IWAI},
  title = {Effects of corner angle of trapezoidal and triangular channel cross-sections on electrical performance of silicon nanowire field-effect transistors with semi gate-around structure},
  journal = {Solid-State Electronics},
  year = 2011,
}

@article{CTT100646368,
  author = {Kiichi Tachi and N. Vulliet and S. Barraud and Kuniyuki KAKUSHIMA and HIROSHI IWAI and S. Cristoloveanu and T. Ernst},
  title = {Influence of source/drain formation process on resistance and effective mobility for scaled multi-channel MOSFET”},
  journal = {Solid-State Electronics},
  year = 2011,
}

@article{CTT100647420,
  author = {unknown unknown and W. Yasenjiang and Kuniyuki KAKUSHIMA and Ahmet Parhat and M. Geni and KENJI NATORI and HIROSHI IWAI},
  title = {Effects of Scattering Direction of Hot Electrons in the Drain of Ballistic n+–i–n+  Diode},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100647416,
  author = {Miyuki Kouda and Kenji Ozawa and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI and ト部友二 and 安田哲二},
  title = {Preparation and Electrical Characterization of CeO2 Films for Gate Dielectrics Application: Comparative Study of Chemical Vapor Deposition and Atomic Layer Deposition Processes},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100647415,
  author = {Miyuki Kouda and Kenji Ozawa and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI and ト部友二 and 安田哲二},
  title = {Preparation and Electrical Characterization of CeO2 Films for Gate Dielectrics Application: Comparative Study of Chemical Vapor Deposition and Atomic Layer Deposition Processes},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100647417,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Rare Earth Oxide Capping Effect on La2O3 Gate Dielectrics for Equivalent Oxide Thickness Scaling toward 0.5nm},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100647425,
  author = {山下晃司 and 沼尻 侑也 and M. Watanabe and Kuniyuki KAKUSHIMA and HIROSHI IWAI and Hiroshi Nohira},
  title = {Study of High-k/Ino.53Ga.0.47As interface by Hard X-ray Photoemission Spectroscopy},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100647422,
  author = {来山大祐 and 久保田透 and Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {[ 183]	D. Kitayama, T. Kubota, T. Koyonagi, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai, “Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5nm* Adjustment of Amount of Residual Oxygen Atoms in Metal Layer”, Japanese Journal of Applied Physics, Vol.50, No.10, pp.10PA05-1-5, October, 2011},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100647421,
  author = {ダリューシュザデ and Takashi Kanda and 山下晃司 and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Capacitance-Voltage Characterization of La2O3 Metal-Oxide-Semiconductor Structures on Ino.53Ga.0.47As Substrate with Different Surface Treatment Methods},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100646373,
  author = {H. Wong and Y. B.L and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Subthreshold Characteristics of MOS Transistors With CeO(2)/La(2)O(3) Stacked Gate Dielectric},
  journal = {IEEE ELECTRON DEVICE LETTERS,},
  year = 2011,
}

@article{CTT100626839,
  author = {来山大祐 and Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Effect of thin Si insertion at metal gate/high-k interface on electrical characteristics of MOS device with La2 O3},
  journal = {Microelectronic Engineering},
  year = 2011,
}

@article{CTT100626838,
  author = {ダリューシュザデ and Kuniyuki KAKUSHIMA and Takashi Kanda and Y.C.Lin and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and E.Y.Chang and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Improving electrical characteristics of W/HfO2/Ino.53Gao.47As gate stacks by altering deposition techniques},
  journal = {Microelectronic Engineering},
  year = 2011,
}

@article{CTT100625147,
  author = {Soshi Sato and Wei Li and Kuniyuki KAKUSHIMA and Kenji Ohmori and KENJI NATORI and Keisaku Yamada and HIROSHI IWAI},
  title = {Eatraction of additional interfacial states of silicon nanowire field-effect transistors},
  journal = {APPLIED PHYSICS LETTERS},
  year = 2011,
}

@article{CTT100624981,
  author = {H.D. Trinh and G. Brammertz and E.Y. Chang and C.I. Kuo and C.Y. Lu and Y.C. Lin and H. Q. Nguyen and Y. Y. Wong and B.T. Tran and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Electrical Characterization of Al2O3 /n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments},
  journal = {IEEE ELECTRON DEVICE LETTERS},
  year = 2011,
}

@article{CTT100621288,
  author = {Kiichi Tachi and S. Barraud and Kuniyuki KAKUSHIMA and HIROSHI IWAI and S. Cristoloveanu and T. Ernst},
  title = {Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs},
  journal = {Microelectronics Reliability},
  year = 2011,
}

@article{CTT100622438,
  author = {HIROSHI IWAI and KENJI NATORI and Kenji Shiraishi and 岩田 潤一 and 押山  淳 and Keisaku Yamada and Kenji Ohmori and Kuniyuki KAKUSHIMA and Ahmet Parhat},
  title = {Si nanowire FET and its modeling},
  journal = {Science China},
  year = 2011,
}

@article{CTT100621284,
  author = {Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and Kenji Ohmori and KENJI NATORI and Keisaku Yamada and HIROSHI IWAI},
  title = {Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors},
  journal = {Microelectronics Reliability},
  year = 2011,
}

@article{CTT100621281,
  author = {DARYOUSH ZADEH and Soshi Sato and Kuniyuki KAKUSHIMA and A. Srivastava and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and C.K. Sarkar and HIROSHI IWAI},
  title = {Effects of La2O3  incorporation in HfO2 gated nMOSFETs on low-frequency noise},
  journal = {Microelectronics Reliability},
  year = 2011,
}

@article{CTT100621278,
  author = {Soshi Sato and Kenji Ohmori and Kuniyuki KAKUSHIMA and Ahmet Parhat and KENJI NATORI and Keisaku Yamada and HIROSHI IWAI},
  title = {Experimental Characterization of Quasi-Fermi Pontential Profile in the Channel of a Silicon Nanowire Field-Effect Transistor with Four-Terminal Geometry},
  journal = {Applied Physics Express},
  year = 2011,
}

@article{CTT100621276,
  author = {K. Shubhakar and K.L. Pey and S.S. Kushvaha and S.J. O'Shea and N. Raghavan and M. Bosman and Miyuki Kouda and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy},
  journal = {Applied Physics Letters},
  year = 2011,
}

@article{CTT100614619,
  author = {Kuniyuki KAKUSHIMA and Koichi Okamoto and Tomotsune Koyanagi and Miyuki Kouda and Kiichi Tachi and Takamasa Kawanago and Jaeyeol Song and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Selection of rare earth silicates for highly scaled gate dielectrics},
  journal = {Microelectronic Engineering},
  year = 2010,
}

@article{CTT100613524,
  author = {Hiroshi Shimomura and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Equivalent Noise Temperature Representation for Scaled MOSFETs},
  journal = {IEICE TRANSACTIONS on Electronics},
  year = 2010,
}

@article{CTT100607473,
  author = {Yeonghun Lee and KENJI NATORI and HIROSHI IWAI and Kuniyuki KAKUSHIMA and Kenji Shiraishi},
  title = {Size-Dependent Properties of Ballistic Silicon Nanowire Field Effect Transistors},
  journal = {Journal of Applied Physics},
  year = 2010,
}

@article{CTT100607472,
  author = {Kuniyuki KAKUSHIMA and Kiichi Tachi and M.Adachi and Koichi Okamoto and Soshi Sato and Jaeyeol Song and Takamasa Kawanago and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Interface and electrical properties of La-silicate for direct contact of high-k with silicon},
  journal = {Solid-State Electronics},
  year = 2010,
}

@article{CTT100607582,
  author = {M.K. Bera and Jaeyeol Song and Ahmet Parhat and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Yttrium-scandium oxide as high-k gate dielectric for germanium metal-oxide-semiconductor devices},
  journal = {SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
  year = 2010,
}

@article{CTT100605118,
  author = {Hiroshi Shimomura and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Effect of High Frequency Noise Current Sources on Noise Figure for Sub-50 nm Node MOSFETs},
  journal = {IEICE TRANSACTIONS on Electronics},
  year = 2010,
}

@article{CTT100613519,
  author = {M.K.Bera and Jaeyeol Song and Ahmet Parhat and Kuniyuki KAKUSHIMA and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Yttrium-scandium oxide as high-k gate dielectric for germanium metal-oxide-semiconductor devices},
  journal = {SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
  year = 2010,
}

@article{CTT100604483,
  author = {Kuniyuki KAKUSHIMA and Koichi Okamoto and Tomotsune Koyanagi and Miyuki Kouda and Kiichi Tachi and Takamasa Kawanago and Jaeyeol Song and Ahmet Parhat and Hiroshi Nohira and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {SrO capping effect for La2O3/ Ce-Silicate gate dielectrics},
  journal = {Microelectronics Reliability 50},
  year = 2010,
}

@article{CTT100604479,
  author = {Yusuke Kobayashi and Kuniyuki KAKUSHIMA and Ahmet Parhat and V.Rampogal Rao and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness},
  journal = {Microelectronics Reliability 50},
  year = 2010,
}

@article{CTT100607464,
  author = {Kuniyuki KAKUSHIMA and M. Nakagawa and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Radio-frequency performance of a sub-100 nm metal-oxide field-effect transistor with high-k gate dielectric},
  journal = {Semiconductor Science and Technology},
  year = 2010,
}

@article{CTT100607466,
  author = {Kuniyuki KAKUSHIMA and Tomotsune Koyanagi and Kiichi Tachi and Jaeyeol Song and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric},
  journal = {Solid-State Electronics},
  year = 2010,
}

@article{CTT100608503,
  author = {Yeonghun Lee and Kuniyuki KAKUSHIMA and Kenji Shiraishi and KENJI NATORI and HIROSHI IWAI},
  title = {Trade-off between density of states and gate capacitance in size-dependent injection velocity of ballistic n-channel silicon nanowire transistors},
  journal = {Applied Physics Letters97, 1},
  year = 2010,
}

@article{CTT100613522,
  author = {Yeonghun Lee and Kuniyuki KAKUSHIMA and Kenji Shiraishi and KENJI NATORI and HIROSHI IWAI},
  title = {Trade-off between density of states and gate capacitance in size-dependent injection velocity of ballistic n-channel silicon nanowire transistors},
  journal = {Applied Physics Letters97, 1, ????,2010},
  year = 2010,
}

@article{CTT100597748,
  author = {H. Wong and HIROSHI IWAI and Kuniyuki KAKUSHIMA and B.L. Yang and P.K. Chu},
  title = {XPS Study of the Bonding Properties of Lanthanum Oxide/Silicon Interface with a Trace Amount of Nitrogen Incorporation},
  journal = {Journal of Electrochemical Society},
  year = 2010,
}

@article{CTT100600446,
  author = {Kuniyuki KAKUSHIMA and Kiichi Tachi and Jaeyeol Song and Soshi Sato and Hiroshi Nohira and E. Ikenaga and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film},
  journal = {JOURNAL OF APPLIED PHYSICS},
  year = 2009,
}

@article{CTT100588550,
  author = {S.-L. Siu and H. Wong and W.-S. Tam and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Subthreshold parameters of radio-frequency multi-finger nanometer MOS transistors},
  journal = {Microelectronics Reliability},
  year = 2009,
}

@article{CTT100588545,
  author = {Tomotsune Koyanagi and Kiichi Tachi and Koichi Okamoto and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation},
  journal = {Japanese Journal of Applied Physics},
  year = 2009,
}

@article{CTT100586778,
  author = {B Sen and H Wong and B.L. Yang and P.K. Chu and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Effects of nitrogen incorporation into lanthana film by plasma immersion ion implantation},
  journal = {Solid-State Electronics},
  year = 2009,
}

@article{CTT100560055,
  author = {KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and PARHAT AHMET and HIROSHI IWAI},
  title = {Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi2},
  journal = {Microelectronic Engineering},
  year = 2008,
}

@article{CTT100586823,
  author = {D.S. Ang and Y.C. Ong and S.J. O'Shea and K.L. Pey and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Study of trap generation in the Sc2 O 3/La2O3/SiOxgate dielectric stack by scanning tunneling microscopy},
  journal = {APPLIED PHYSICS LETTERS},
  year = 2008,
}

@article{CTT100588561,
  author = {D.S. Ang and Y.C. Ong and S.J. O'Shea and K.L. Pey and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Study of trap generation in the Sc2 O 3/La2O3/SiOxgate dielectric stack by scanning tunneling microscopy},
  journal = {APPLIED PHYSICS LETTERS},
  year = 2008,
}

@article{CTT100588755,
  author = {Ahmet Parhat and 中川健太郎 and Kuniyuki KAKUSHIMA and Hiroshi Nohira and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack},
  journal = {Microelectronics Reliability},
  year = 2008,
}

@article{CTT100588767,
  author = {KAZUO TSUTSUI and T Matsuda and M Watanabe and Cheng-Guo Jin and 佐々木雄一朗 and Bunji Mizuno and E Ikenaga and Kuniyuki KAKUSHIMA and Ahmet Parhat and T Maruizumi and Hiroshi Nohira and takeo hattori and HIROSHI IWAI},
  title = {Activated Boron and its Concentration Profiles in Heavily Doped Si Studied by Soft X-ray Photoelectron Spectroscopy and Hall Measurements},
  journal = {Journal of Applied Physics},
  year = 2008,
}

@article{CTT100588871,
  author = {KAZUO TSUTSUI and T. Shiozawa and K. Nagahiro and Y. Ohishi and Kuniyuki KAKUSHIMA and Ahmet Parhat and N. Urushihara and M. Suzuki and HIROSHI IWAI},
  title = {Improvement of Thermal Stability of Ni Silicide on N+-Si by Direct Deposition of Group III Element (Al, B) Thin Film at Ni/Si Interface},
  journal = {Microelectronic Engineering},
  year = 2008,
}

@article{CTT100588880,
  author = {KAZUO TSUTSUI and Ruifei Xiang and K. Nagahiro and T. Shiozawa and Ahmet Parhat and Y. Okuno and M. Matsumoto and M. Kubota and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi2},
  journal = {Microelectronic Engineering},
  year = 2008,
}

@article{CTT100588886,
  author = {Reyes Joel Molina and A. Torres and W. Calleja and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Degradation and breakdown of W-La2O3 stack after annealing in N-2},
  journal = {JAPANESE JOURNAL OF APPLIED PHYSICS},
  year = 2008,
}

@article{CTT100588982,
  author = {Kuniyuki KAKUSHIMA and K. Okamoto and M. Adachi and Kiichi Tachi and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion},
  journal = {SOLID-STATE ELECTRONICS},
  year = 2008,
}

@article{CTT100586827,
  author = {Ahmet Parhat and Nakagawa Kentaro and Kuniyuki KAKUSHIMA and Hiroshi Nohira and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack},
  journal = {Microelectronics Reliability 48},
  year = 2008,
}

@article{CTT100588896,
  author = {N. Urushihara and S. Iida and N. Sanada and M. Suzuki and D.F. Paul and S. Bryan and Y. Nakajima and T. Hanajiri and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Three dimensional image construction and spectrum extraction from two dimensional elemental mapping in Auger electron spectroscopy},
  journal = {JOURNAL OF VACUUM SCIENCE & TECHNOLOGY},
  year = 2008,
}

@article{CTT100544681,
  author = {Yusuke Kobayashi and C. Raghunathan Manoj and Kazuo Tsutsui and Venkanarayan Hariharan and Kuniyuki Kakushima and V.Ramgopal Rao and Parhat Ahmet and Hiroshi Iwai},
  title = {Parasitic Effects in Multi-Gate MOSFETs},
  journal = {IEICE TRANS. ELECTRON},
  year = 2007,
}

@article{CTT100586854,
  author = {Soshi Sato and Kiichi Tachi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Thermal-stability improvement of LaON thin film formed using nitrogen radicals},
  journal = {Microelectronic Engineering},
  year = 2007,
}

@article{CTT100586852,
  author = {Jaeyeol Song and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Improvement of interfacial properties with interfacial layer in La2O3  / Ge structure},
  journal = {Microelectronic Engineering},
  year = 2007,
}

@article{CTT100586853,
  author = {Takamasa Kawanago and Kiichi Tachi and Jaeyeol Song and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Electrical characterization of directly deposited La-Sc oxides complex for gate insulator application},
  journal = {Microelectronic Engineering},
  year = 2007,
}

@article{CTT100586862,
  author = {Y.C. Ong and D.S. Ang and K.L. Pey and S.J. O'Shea and K.E.J. Goh and C. Troadec and C.H. Thung and Takamasa Kawanago and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Bilayer gate dielectric study by scanning tunneling microscopy},
  journal = {APPLIED PHYSICS LETTERS},
  year = 2007,
}

@article{CTT100406557,
  author = {K. Kakushima and T. Bourouina and T. Sarnet and G. Kerrien and D. Debarre and J. Boulmer and H. Fujita},
  title = {Silicon Periodic Nano-structures Obtained By Laser Exposure Of Nano-wires},
  journal = {Microelectronics Journal},
  year = 2005,
}

@article{CTT100406556,
  author = {Kuniyuki Kakushima and Toshiyuki Watanabe and Kouji Shimamoto and Takushi Gouda and Manabu Ataka and Hidenori Mimura and Yoshimasa Isono and Gen Hashiguchi and Yutaka Mihara and Hiroyuki Fujita},
  title = {Atomic Force Microscope Cantilever Array for Parallel Lithography of Quantum Devices},
  journal = {Japanese Journal of Applied Physics},
  year = 2004,
}

@inproceedings{CTT100903418,
  author = {梶川 亮介 and 川那子 高暢 and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {トップゲートに自己整合したWOx S/Dを用いた30-50 nm膜厚WSe2バックチャネルpFET},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100902988,
  author = {Ryosuke Kajikawa and Takamasa Kawanago and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Self-Aligned WOx S/D Contacts to Gate Stacks with TiOx Nucleation Layer by Multiple-Deposition Method in WSe2 pFETs},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100903417,
  author = {寺岡 楓 and 今井 慎也 and 黒原 啓太 and 伊東 壮真 and 川那子 高暢 and 宗田 伊理也 and 角嶋 邦之 and 若林 整},
  title = {Ni/Al2O3/スパッタWS2コンタクトの電流電圧特性},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100903419,
  author = {今井 慎也 and 梶川 亮介 and 川那子 高暢 and 宗田 伊理也 and 角嶋 邦之 and 辰巳 哲也 and 冨谷 茂隆 and 筒井 一生 and 若林 整},
  title = {スパッタMoS2膜に対するエッジ金属コンタクトの電流電圧特性},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100886128,
  author = {Iriya Muneta and Takanori Shirokura and Pham Nam Hai and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulfide atomic layered structure},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100896541,
  author = {Ryo Ono and Shinya Imai and Takamasa Kawanago and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
  title = {Improvement of MoS2 Film Quality by Solid-Phase Crystallization from PVD Amorphous MoSx Film},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100896555,
  author = {Peilong Wang and Atsushi Hori and Iriya Muneta and Takamasa Kawanago and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Self-heating and Short-Channel Effect Immunity with Partial-Bottom-Dielectric-Isolation for Gate-All-Around Nano-Sheet FETs},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100896554,
  author = {濱田 昌也 and 松浦 賢太朗 and 濱田 拓也 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100896540,
  author = {Shinya Imai and Ryo Ono and Iriya Muneta and Kuniyuki Kakushima and Tetsuya Tatsumi and Shigetaka Tomiya and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Grain-Size Enlargement of MoS2 Film by Low-Rate Sputtering with Molybdenum Grid},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100904701,
  author = {Reika Ota and Shinnosuke Yasuoka and Ryoichi Mizutani and Takahisa Shiraishi and Kuniyuki Kakushima and Hiroshi Funakubo},
  title = {Ferroelectricity of 20-nm Thick (Al0.8Sc0.2)N Thin Films with TiN Electrodes},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100905149,
  author = {Shonosuke Kimura and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {Performance Improvements of P-channel GaN HFETs by Atomic Layer Etching using Nitrogen Plasma},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100896549,
  author = {川那子 高暢 and 梶川 亮介 and 水谷 一翔 and Tsai Sung Lin and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {アルミニウムスカンジウム合金(AlSc)と酸化タングステン(WOx)をソース/ドレイン電極に用いたWSe2 n/p FETとCMOSインバータ応用},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100901287,
  author = {安岡慎之介 and 大田怜佳 and 岡本一輝 and 石濱圭佑 and 清水荘雄 and 角嶋邦之 and 上原雅人 and 山田浩志 and 秋山守人 and 小金澤智之 and L. S. R. Kumara and Okkyun Seo and 坂田修身 and 舟窪浩},
  title = {メモリ応用に向けた(Al, Sc)N膜の薄膜化の検討},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100896550,
  author = {立松 真一 and 濱田 昌也 and 濱田 拓也 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {アニール処理によるWS2-Niエッジコンタクト特性の向上},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100896548,
  author = {小野 凌 and 今井 慎也 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {微結晶MoS2膜への硫黄雰囲気アニールによる結晶性向上},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100896547,
  author = {今井 慎也 and 小野 凌 and 宗田 伊理也 and 角嶋 邦之 and 辰巳 哲也 and 冨谷 茂隆 and 筒井 一生 and 若林 整},
  title = {MoS2膜質のスパッタ成膜レート依存性調査},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100896546,
  author = {水谷 一翔 and 星井 拓也 and 川那子 高暢 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {希土類酸化物キャッピングによるY:HfO2キャパシタの信頼性改善},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100879798,
  author = {宗田 伊理也 and 白倉 孝典 and ファム ナムハイ and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {強磁性を示す二次元多結晶層状物質MoS2における非対称線形磁気抵抗},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100881317,
  author = {宗田 伊理也 and 白倉 孝典 and PHAM NAM HAI and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {Ferromagnetism and current control of magnetoresistance  in two-dimensional polycrystalline MoS2},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100875814,
  author = {阿野 響太郎 and 星井 拓也 and 若林 整 and 筒井 一生 and 依田 孝 and 角嶋 邦之},
  title = {ゲート付きSiC pnダイオードの電気特性評価},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100867380,
  author = {宗田 伊理也 and 白倉 孝典 and ファム ナム ハイ and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {二次元多結晶二硫化モリブデン原子層状膜における超低電流強磁性変調},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100877155,
  author = {R. Shibukawa and S. -L. Tsai and T. Hoshii and H. Wakbayashi and K. Tsutsui and K. Kakushima},
  title = {Thermal stability of ferroelectric AlScN films},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877154,
  author = {Kazuto Mizutani and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Recovery of ferroelectric property after endurance test by positive reset voltage application for CeOx-capped ferroelectric HfO2 films},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877152,
  author = {Si-Meng Chen and Sung-Lin Tsai and Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {GaN HEMTs with self-upward-polarized AlScN gate dielectrics toward E-mode operation},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877153,
  author = {Mitsuki Nishizawa and T. Hoshii and H. Wakabayashi and K. Tsutsui and I. Mizushima and T. Yoda and K. Kakushima},
  title = {Introduction of surface field-plate for accurate minority carrier lifetime estimation of 4H-SiC epitaxial layer},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877156,
  author = {Sho Sasaki and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {Observation of ferroelectricity in atomic layer deposited AlN film},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100875832,
  author = {小森 勇太 and 木村 安希 and 星井 拓也 and 宮野 清孝 and 津久井 雅之 and 水島 一郎 and 依田 孝 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {InAlN/AlN/GaN構造におけるキャリア散乱要因のAlN層厚依存性},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100902941,
  author = {Takamasa Kawanago and Takahiro Matsuzaki and Ryosuke Kajikawa and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Experimental Demonstration of High-Gain CMOS Inverter at Low Vdd  Down to 0.5 V Consisting of WSe2  n/p FETs},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877149,
  author = {Ryo Ono and Shinya Imai and Yuta Kusama and Takuya Hamada and Masaya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Nobuyuki Ikarashi and Hitoshi Wakabayashi},
  title = {Growth Mechanism of PVD MoS2 Film from Sub-Monolayer Region},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877147,
  author = {Takuya Hamada and Taiga Horiguchi and Masaya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
  title = {Grain Size Enlargement in 2D WS2 Film with Low-Power RF-Magnetron Sputtering},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100875829,
  author = {小森 勇太 and 星井 拓也 and 宮野 清孝 and 津久井 雅之 and 水島 一郎 and 依田 孝 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {InAlN/AlN/GaN構造中2DEGにおける移動度のキャリア濃度依存性},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877142,
  author = {Masaya Hamada and Takuya Hamada and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Side-Contact Architecture for p/n-Stacked-Nano-Sheet ZrS2 2D-FETs Beyond 1-nm Technology Node},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100861332,
  author = {Masahiro Watanabe and Naoyuki Shigyo and Takuya Hoshii and Kazuyoshi Furukawa and Kuniyuki Kakushima and Katsumi Satoh and Tomoko Matsudai and Takuya Saraya and Iriya Muneta and Hitoshi Wakabayashi and Akira Nakajima and Shin-ichi Nishizawa and Kazuo Tsutsui and Toshiro Hiramoto and Hiromichi Ohashi and Hiroshi Iwai},
  title = {Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices},
  booktitle = {Proceedings of the 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021)},
  year = 2021,
}

@inproceedings{CTT100848915,
  author = {筒井一生 and 濱田拓也 and 高山 研 and 金 相佑 and 星井拓也 and 角嶋邦之 and 若林 整 and 高橋言緒 and 井手利英 and 清水三聡},
  title = {選択成長法を用いたGaN 系FinFET},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100855930,
  author = {Takuya Saraya and Kazuo Ito and Toshihiko Takakura and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Masanori Tsukuda and Katsumi Satoh and Tomoko Matsudai and Kuniyuki Kakushima and Takuya Hoshii and Kazuo Tsutsui and Hiroshi Iwai and Atsushi Ogura and Wataru Saito and Shin-ichi Nishizawa and Ichiro Omura and Hiromichi Ohashi and Toshiro Hiramoto},
  title = {3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855924,
  author = {S. Tsai and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Highly Oriented Growth of AlxSc1-xN Ferroelectric Film on W Bottom Electrodes},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855928,
  author = {"Atsuhiro Ohta and J. Song and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima"},
  title = {Electrical Characteristics of Atomic Layer Deposited Y-silicate Dielectrics},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855929,
  author = {H. Nishida and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {A simulation study on the transient leakage current analysis of a GaN epitaxial layer},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855926,
  author = {"Kazuto Mizutani and Yu-Wei Lin and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima"},
  title = {Observation of wake-up effect on ferroelectric Y:HfO2 thickness scaling},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855925,
  author = {Y.-W. Lin and K. Mizutani and T. Hoshii and H. Wakabayashi and K. Tsutsui and Y.-F. Tsao and T.-J. Huang and H.-T. Hsu and K. Kakushima},
  title = {Ferroelectric HfO2 Capacitors for Varctor Application in GHz},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855927,
  author = {A. Miyata and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Photocurrent measurements of AlGaN/GaN HEMT under X-ray irradiation},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855937,
  author = {Shinya Imai and Takuya Hamada and Masaya Hamada and Takanori Shirokura and Shigetaka Tomiya and Iriya Muneta and Kuniyuki Kakushima and Tetsuya Tatsumi and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Importance of MoS2-Compound Sputtering even with Sulfur-Vapor Anneal for Chip-Size Fabrication},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855934,
  author = {Sunglin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {Thickness Scaling on Ferroelectric Al0.8Sc0.2N Films},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855933,
  author = {Satoshi Igarashi and Yusuke Mochiduki and Haruki Tanigawa and Masaya Hamada and Kentaro Matsuura and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Low Contact Resistance at Interface between Sputtered-MoS2 Film and TiSi2 Contact Treated by Higher-Temperature Forming-Gas Annealing},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855932,
  author = {Masaya Hamada and Kentaro Matsuura and Takuya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {ZrS2 Ambipolar FETs with Schottky Barrier to Near-Midgap TiN Contact Controlled by Top Gate TiN/Al2O3 Stack},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100848913,
  author = {木村 安希 and 星井 拓也 and 宮野 清孝 and 津久井 雅之 and 水島 一郎 and 依田 孝 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {InAlN/(AlN)/GaN構造におけるキャリア移動度の温度依存性},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100848912,
  author = {門 龍翔 and 横川 凌 and 沼沢 陽一郎 and 筒井 一生 and 角嶋 邦之 and 小椋 厚志},
  title = {Si-IGBT作製プロセスにおける水素熱処理の影響},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100848911,
  author = {筒井 一生 and 松橋 泰平 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 永山 勉 and 樋口 隆弘 and 加藤 慎一 and 谷村 英昭 and 室 隆桂之 and 松下 智裕 and 森川 良忠},
  title = {AsおよびBの共ドープによるSi中Asクラスターの特性制御},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100848908,
  author = {高山 研 and 太田 貴士 and 佐々木 満孝 and 向井 勇人 and 濱田 拓也 and 高橋 言雄 and 井出 利英 and 清水 三聡 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {選択成長法を用いたGaN FinFETの作製:リーク電流抑制の改良},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100848904,
  author = {久恒 悠介 and 金 相佑 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {横型GaN FinFETの構造最適化についての検討},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100852995,
  author = {Kazuto Mizutani and Yu Wei Lin and Takuya Hoshii and Hiroshi Funakubo and Hitoshi Wakabayashi and Kazuto Tsutsui and Kuniyuki Kakushima},
  title = {Formation of Ferroelectric Y-doped HfO2 though Atomic Layer Deposition and Low Temperature Post Annealing},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100852900,
  author = {J. Molina and T. Mimura and Y. Nakamura and T. Shimizu and H. Funakubo and I. Fujiwara and T. Hoshii and S. Ohmi and A. Hori and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Interface engineering of BEOL compatible ferroelectric Y:HfO2 device for enhanced endurance},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100829203,
  author = {松橋 泰平 and 星井 拓也 and 沖田 寛昌 and 中島 昭 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {分極接合基板における2DEG枯渇電圧の解析的導出},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100829204,
  author = {木村 安希 and 星井 拓也 and 宮野 清孝 and 布上 真也 and 名古 肇 and 水島 一郎 and 依田 孝 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {InAlN/GaNヘテロ構造におけるキャリア輸送特性のAlNスペーサ層膜厚依存性},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100829205,
  author = {松浦 賢太朗 and 濱田 昌也 and 濱田 拓也 and 谷川 晴紀 and 坂本 拓朗 and 堀 敦 and 宗田 伊理也 and 川那子 高暢 and 角嶋 邦之 and 筒井 一生 and 小椋 厚志 and 若林 整},
  title = {大面積集積化に向けたスパッタ堆積ノーマリーオフMoS2-nMISFETs},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100813991,
  author = {K. Tsutsui and K. Natori and T. Ogawa and T. Muro and T. Matsuishita and Y. Morikawa and T. Hoshii and K. Kakushima and H. Wakabayashi and K. Hayashi and F. Matsui and T. Kinoshita},
  title = {Analyses of 3D Atomic Arrangements of Dopants in Si Crystal Using Spectro-photoelectron Holography},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813992,
  author = {Takuya Hamada and Shinpei Yamaguchi and Taiga Horiguchi and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Comparative and Systematic Study of Doping Technology for 2D -Sputtered SputteredSputtered MoS 2 Film},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813988,
  author = {Y. W. Lin and J. Song and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Pulse deposition of Y2O3 films by Y(iPrCp)3 assisted by Ar boost technology},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813987,
  author = {Jinhan Song and A. Ohta and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Electrical Characteristics of Atomic Layer Deposited Y-silicate Devices},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813986,
  author = {H. Tanigawa and K. Matsuura and I. Muneta and T. Hoshii and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {Positive Threshold Voltage in Accumulation Capacitance of TiN-Top-Gate/High-k/Sputtered-MoS2 Stacks},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813985,
  author = {T. Kinoshita and T. Matsushita and T. Muro and T. Ohkochi and H. Osawa and K. Hayashi and F. Matsui and K.Tsutsui and K. Natori and Y. Morikawa and T. Hoshii and K. Kakushima and H. Wakabayashi and A. Takeda and K. Terashima and W. Hosoda and T. Fukura and Y. Yano and H. Fujiwara and M. Sunagawa and H. Kato and T. Oguchi and T. Wakita and Y. Muraoka and T. Yokoya},
  title = {Status of Photoelectron Holography at SPring-8: Experimental Setup for Time- and Space-Resolved Technique and Application to Individual Atomic Imaging of Multiple Dopant Sites},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813990,
  author = {Kazuo Tsutsui and Tomohiro Matsushita and Takayuki Muro and Yoshitada Morikawa and Kotaro Natori and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kouichi Hayashi and Fumihiko Matsui and Toyohiko Kinoshita},
  title = {3D Atomic Imaging of As Doped in Si by Spectro-Photoelectron Holography},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813989,
  author = {Takuya Hoshii and Hiromasa Okita and Taihei Matsuhashi and Indraneel Sanyal and Yu-Chih Chen and Ying-Hao Ju and Akira Nakajima and Kuniyuki Kakushima and Hitoshi Wakabayashi and Jen-Inn Chyi and Kazuo Tsutsui},
  title = {Evaluation of Interfacial Charges at GaN/AlGaN Interfaces Grown by MOVPE},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100833081,
  author = {渡辺正裕 and 執行直之 and 星井拓也 and 古川和由 and 角嶋邦之 and 佐藤克己 and 末代知子 and 更屋拓哉 and 高倉俊彦 and 伊藤一夫 and 福井宗利 and 鈴木慎一 and 竹内 潔 and 宗田伊里也 and 若林 整 and 中島 昭 and 西澤伸一 and 筒井一生 and 平本俊郎 and 大橋弘通 and 岩井洋},
  title = {トレンチゲート型Si-IGBTの3次元精密TCADシミュレーション},
  booktitle = {電子情報通信学会技術研究報告 = IEICE technical report : 信学技報},
  year = 2019,
}

@inproceedings{CTT100813981,
  author = {T. Hiramoto and T. Saraya and K. Itou and T. Takakura and M. Fukui and S. Suzuki and K. Takeuchi and M. Tsukuda and Y. Numasawa and K. Satoh and T. Matsudai and W. Saito and K. Kakushima and T. Hoshii and K. Furukawa and M. Watanabe and N. Shigyo and H. Wakabayashi and K. Tsutsui and H. Iwai and A. Ogura and S. Nishizawa and I. Omura and H. Ohash},
  title = {Switching of 3300V Scaled IGBT by 5V Gate Drive},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829171,
  author = {太田 惇丈 and 宋 禛漢 and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {原子層堆積法を用いたイットリウムシリケート薄膜の形成},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100804206,
  author = {Takanori Shirokura and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Edge induced ferromagnetism in sputtered MoS2 film controlled by annealing},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829182,
  author = {松橋 泰平 and 星井 拓也 and 沖田 寛昌 and Indraneel Sanyal and Yu-Chih Chen and Ying-Hao Ju and 中島 昭 and 角嶋 邦之 and 若林 整 and Jen-Inn Chyi and 筒井 一生},
  title = {TEGを用いたGaN/AlGaNヘテロ成長の2DHG側界面電荷への影響},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829181,
  author = {今井 慎也 and 濱田 昌也 and 五十嵐 智 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {硫化プロセスにおけるスパッタMoS2膜質向上の重要性},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829180,
  author = {五十嵐 智 and 望月 祐輔 and 谷川 晴紀 and 濱田 昌也 and 松浦 賢太朗 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタMoS2膜とTiSi2膜の界面におけるFGアニールによるコンタクト抵抗低減},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829179,
  author = {谷川 晴紀 and 松浦 賢太朗 and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {正の閾値電圧のMetal-Top-Gate/High-k/スパッタMoS2の蓄積容量特性},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829178,
  author = {木村 安希 and 久永 真之佑 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {部分的に薄層化したAlGaN 層によるAlGaN/GaN コンタクト抵抗低減効果の薄層領域パターン依存性},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813980,
  author = {Joel Molina-Reyes and Takuya Hoshii and Shun-Ichiro Ohmi and Hiroshi Funakubo and Atsushi Hori and Ichiro Fujiwara and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {Endurance Improvement in Ferroelectric Y-doped HfO2 Thin Films on NiSi2 with Low-Thermal Budget Processing},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813982,
  author = {Tomohiko Yamagishi and Atsushi Hori and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Self-Heating-Aware Cell Design for Multi-Stacked Circuits with p/n-Vertically-Integrated Nanowires on FinFET},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813983,
  author = {T. Saraya and K. Itou and T. Takakura and M. Fukui and S. Suzuki and K. Takeuchi and K. Kakushima and T. Hoshii and K. Tsutsui and H. Iwai and S. Nshizawa and I. Omura and T. Hiramoto},
  title = {Impact of Structural Parameter Scaling on On-state Voltage in 1200V Scaled IGBTs},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829168,
  author = {宋 ジンハン and 太田 惇丈 and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {Y2O3/SiO2積層構造の絶縁膜を用いたMOS capacitorの特性評価},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829169,
  author = {山岸 朋彦 and 堀 敦 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {横型p/n積層ナノワイヤによるNORとNANDセルの省面積設計},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829170,
  author = {草深 一樹 and Sunglin Tsai and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {スパッタリングによって形成したAlScN膜のリーク電流の評価},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829172,
  author = {西田 宗史 and 星井 拓也 and 片岡 寛明 and 筒井 一生 and 角嶋 邦之 and 若林 整},
  title = {ステップ電圧印加時の過渡電流測定によるGaN中のトラップ密度評価},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829173,
  author = {宮田 篤希 and 齋藤 大樹 and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {4H-SiCエピタキシャル層によるX線検出に関する検討},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829174,
  author = {神林 郁哉 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {Si(111)基板上GaNのためのMgF2バッファの検討},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829175,
  author = {蔡 松霖 and 草深 一樹 and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {スパッタリングを用いたAlScN膜の形成},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829176,
  author = {濱田 昌也 and 松浦 賢太朗 and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタ法と硫黄雰囲気アニールで成膜した高いホール効果移動度を持つ層状ZrS2膜},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829202,
  author = {沖田 寛昌 and 星井 拓也 and 松橋 泰平 and Sanyal Indraneel and Chen Yu-Chih and Ju Ying-Hao and 中島 昭 and 西澤 伸一 and 大橋 弘通 and 角嶋 邦之 and 若林 整 and Chyi Jen-Inn and 筒井 一生},
  title = {TEGを用いたAlGaN/GaNヘテロ成長の2DEG側界面電荷への影響},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829201,
  author = {濱田 拓也 and 堀口 大河 and 辰巳 哲也 and 冨谷 茂隆 and 濱田 昌也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタMoS2膜のCl2プラズマ処理によるシート抵抗低減},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829200,
  author = {井上 毅哉 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {シリコン縦型パワーデバイスへのひずみ導入によるオン抵抗低減の研究},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829184,
  author = {向井 勇人 and 髙山 研 and 濱田 拓也 and 高橋 言緒 and 井手 利英 and 清水 三聡 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {選択成長法を用いたGaN FinFETの作製},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829183,
  author = {高山 研 and 向井 勇人 and 濱田 拓也 and 高橋 言緒 and 井手 利英 and 清水 三総 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {GaN Fin構造選択成長における低抵抗領域の発生原因の検討},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829177,
  author = {堀口 大河 and 濱田 拓也 and 辰巳 哲也 and 冨谷 茂隆 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタMoS2膜のSF6プラズマ処理によるシート抵抗低減},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100811298,
  author = {更屋 拓哉 and 伊藤 一夫 and 高倉 俊彦 and 福井 宗利 and 鈴木 慎一 and 竹内 潔 and 附田 正則 and 沼沢 陽一郎 and 佐藤 克己 and 末代 知子 and 齋藤 渉 and 角嶋邦之 and 星井 拓也 and 古川 和由 and 渡辺正裕 and 執行 直之 and 筒井一生 and 岩井洋 and 小椋 厚志 and 西澤 伸一 and 大村 一郎 and 大橋 弘通 and 平本 俊郎},
  title = {5Vゲート駆動1200V級スケーリングIGBTの動作実証とスイッチング損失の低減 (シリコン材料・デバイス)},
  booktitle = {電子情報通信学会技術研究報告 = IEICE technical report : 信学技報},
  year = 2019,
}

@inproceedings{CTT100813979,
  author = {Takuya Hoshii and Akira Nakajima and Shin-ichi Nishizawa and Hiromichi Ohashi and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {Quantitative evaluation of interfacial charges at GaN/AlGaN interfaces},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100814076,
  author = {Iriya Muneta and Naoki Hayakawa and Takanori Shirokura and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Ferromagnetic tunnel devices with two-dimensional layered material MoS2},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100822935,
  author = {星井 拓也 and 中島 昭 and 西澤 伸一 and 大橋 弘通 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {分極接合基板におけるAlGaN/GaNヘテロ界面の欠陥電荷評価},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813978,
  author = {K. Matsuura and M. Hamada and T. Hamada and H. Tanigawa and T. Sakamoto and W. Cao and K. Parto and A. Hori and I. Muneta and T. Kawanago and K. Kakushima and K. Tsutsui and A. Ogura and K. Banerjee and H. Wakabayashi},
  title = {Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100809866,
  author = {筒井一生 and 松下 智裕 and 名取 鼓太郞 and 小川 達博 and 室 隆桂之 and 森川 良忠 and 星井 拓也 and 角嶋邦之 and 若林整 and 林 好一 and 松井 文彦 and 木下 豊彦},
  title = {光電子ホログラフィー法によるシリコン中に高濃度ドープされた活性および不活性な不純物原子の三次元原子配列構造の観測},
  booktitle = {電子情報通信学会技術研究報告 = IEICE technical report : 信学技報},
  year = 2019,
}

@inproceedings{CTT100821301,
  author = {Joel Molina-Reyes and Haruki Iwatsuka and Takuya Hoshii and Shun-Ichiro Ohmi and Hiroshi Funakubo and Atsushi Hori and Ichiro Fujiwara and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {NiSi2 as a Promotor of Ferroelectricity in Si-doped HfO2 Thin Films after Low-Thermal Budget Processing},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813974,
  author = {J. Molina and H. Iwatsuka and T. Hoshii and S. Ohmi and H. Funakubo and A. Hori and I. Fujiwara and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Ferroelectric Properties of Si doped HfO2 Thin Films with NiSi2 as Bottom Electrode},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813973,
  author = {Takuya Saraya and Kazuo Itou and Toshihiko Takakura and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Masanori Tsukuda and Yohichiroh Numasawa and Katsumi Satoh and Tomoko Matsudai and Wataru Saito and Kuniyuki Kakushima and Takuya Hoshii and Kazuyoshi Furukawa and Masahiro Watanabe and Naoyuki Shigyo and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Atsushi Ogura and Shin-Ichi Nishizawa and Ichiro Omura and Hiromichi Ohashi and Toshiro Hiramo},
  title = {3300V Scaled IGBTs Driven by 5V Gate Voltag},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813972,
  author = {Masahiro Watanabe and Naoyuki Shigyo and Takuya Hoshii and Kazuyoshi Furukawa and Kuniyuki Kakushima and Katsumi Satoh and Tomoko Matsudai and Takuya Saraya and Toshihiro Takakura and Kazuo Itou and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Iriya Muneta and Hitoshi Wakabayashi and Akira Nakajima and Shin-ichi Nishizawa and Kazuo Tsutsui and Toshiro Hiramoto and Hiromichi Ohashi and Hiroshi Iwai},
  title = {Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813984,
  author = {M. Fukui and T. Saraya and K. Itou and T. Takakura and S. Suzuki and K. Takeuchi and K. Kakushima and T. Hoshii and K. Tsutsui and H. Iwai and S. Nishizawa and I. Omura and T. Hiramoto},
  title = {Turn-Off Loss Improvement by IGBT Scaling},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813976,
  author = {K. Sasaki and J. Song and T. Hoshii and H. Wakabayashi and K. Tsutsui and I. Mizushima and T. Yoda and K. Kakushima},
  title = {Minority Carrier Lifetime Extraction Methodology of SiC Epitaxial Layer},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813975,
  author = {K. Hisatsune and T. Hoshii and I. Muneta and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Thickness Effects on Charge and Discharge Characteristics of CeOx MIM Capacitors},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100816748,
  author = {濱田 拓也 and 向井 勇人 and 高橋 言緒 and 井手 利英 and 清水 三聡 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {FinFET応用に向けた選択成長GaNチャネルの電気特性},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100816750,
  author = {筒井 一生 and 松下 智裕 and 名取 鼓太郞 and 小川 達博 and 室 隆桂之 and 森川 良忠 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 林 好一 and 松井 文彦 and 木下 豊彦},
  title = {光電子ホログラフィーによる半導体中の不純物の3Ｄ原子イメージング},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813971,
  author = {Takeya Inoue and Takuya Hoshii and Takuo Kikuchi and Hidehiko Yabuhara and Kazuyuki Ito and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai and Junichi Tonotani and Kazuo Tsutsui},
  title = {Fundamental study on reducing on-resistance by introducing strain  into silicon vertical power devices},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813970,
  author = {Masaya Hamada and Kentaro Matsuura and Takuro Sakamoto and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {High Hall-Effect Mobility of Atomic-Layered Polycrystalline-ZrS2 Film using Sputtering and Sulfur Annealing},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100816747,
  author = {筒井 一生 and 松下 智裕 and 名取 鼓太郞 and 室 隆桂之 and 森川 良忠 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 林 好一 and 松井 文彦 and 木下 豊彦},
  title = {光電子分光ホログラフィーによるAsドープSi中のドーパント複数サイトの原子配列イメージング},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100816749,
  author = {松浦 賢太朗 and 濱田 昌也 and 坂本 拓朗 and 谷川 晴紀 and 宗田 伊理也 and 石原 聖也 and 角嶋 邦之 and 筒井 一生 and 小椋 厚志 and 若林 整},
  title = {F.G.アニールによるMoSi2/スパッタMoS2界面コンタクト抵抗低減},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100816745,
  author = {筒井一生 and 松下智裕 and 室隆桂之 and 森川良忠 and 名取鼓太郎 and 小川達博 and 星井拓也 and 角嶋邦之 and 若林整 and 林好一 and 松井文彦 and 木下豊彦},
  title = {光電子ホログラフィー法によるシリコン中にドープされた不純物の三次元原子配列構造の解析},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100816746,
  author = {松浦賢太朗 and 清水淳一 and 外山真矢人 and 大橋匠 and 坂本拓朗 and 宗田伊理也 and 石原聖也 and 角嶋邦之 and 筒井一生 and 小椋厚志 and 若林整},
  title = {大面積集積化に向けたスパッタ二次元半導体 MoS2 薄膜のTop-gate nMISFETs チャネル応用},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100792973,
  author = {Takanori Shirokura and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Magnetic property in sputtered MoS2 thin film on growth temperature},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813969,
  author = {T. Saraya and K. Itou and T. Takakura and M. Fukui and S. Suzuki and K. Takeuchi and M. Tsukuda and Y. Numasawa and K. Satoh and T. Matsudai and W. Saito and K. Kakushima and T. Hoshii and K. Furukawa and M. Watanabe and N. Shigyo and K. Tsutsui and H. Iwai and A. Ogura and S. Nishizawa and I. Omura and H. Ohashi and T. Hiramoto},
  title = {Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100880842,
  author = {K. Sasaki and J. Song and T. Hoshii and H. Wakabayashi and K. Tsutsui and I. Mizushima and T. Yoda and K. Kakushima},
  title = {Minority Carrier Lifetime Measurement for SiC Epitaxial Layer},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100786672,
  author = {Takuya Hoshii and Shuma Tsuruta and Akira Nakajima and Shin-ichi Nishizawa and Hiromichi Ohashi and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {Performance Prediction of Scaled p-channel GaN MOSFET on Polarization Junction Platform},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100786671,
  author = {Takuya Hamada and Hayato Mukai and Tokio Takahashi and Toshihide Ide and Mitsuaki Shimizu and Hiroki Kuroiwa and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai and Kazuo Tsutsui},
  title = {Electrical properties of selectively grown GaN channel for FinFETs},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813966,
  author = {Toyohiko Kinoshita and Tomohiro Matsushita and Takayuki Muro and Takuo Ohkochi and Hitoshi Osawa and Kouichi Hayashi and Fumihiko Matsui and Kazuo Tsutsui and Kotaro Natori and Yoshitada Morikawa and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Aya Taked and Kensei Terashim and Wataru Hosoda and Tetsuji Fukura and Yuukou Yano and Hirohkazu Fujiwara and Masanori Sunagawa and Hiromitsu Kato and Tamio Oguchi and Takanori Wakita and Yuuji Muraoka and Takayoshi Yokoya},
  title = {Status of photoelectron holography at SPring-8:Experimental setup for time- and space-resolved technique and application to individual atomic imaging of multiple dopant sites},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100795211,
  author = {T. Sakamoto and T. Ohashi and K. Matsuura and I. Muneta and K. Kakushima and K. Tsutsui and Y. Suzuki and N. Ikarashi and H. Wakabayashi},
  title = {Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100795212,
  author = {M. Hamada and K. Matsuura and T. Sakamoto and H. Tanigawa and T. Ohashi and I. Muneta and T. Hoshii and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Vapor Phase Sulfurization through Al2O3 Passivation Film},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100786670,
  author = {Kazuo Tsutsui and Tomohiro Matsushita and Takayuki Muro and Yoshitada Morikawa and Kotaro Natori and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kouichi Hayashi and Fumihiko Matsui and Toyohiko Kinoshita},
  title = {Atomic Sites of Dopants in Si Visualized by Spectro-Photoelectron Holography},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100792974,
  author = {Takanori Shirokura and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Growth temperature dependence of magnetic property of sputtered MoS2 thin film},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816741,
  author = {向井 勇人 and 濱田 拓也 and 高橋 言緒 and 井出 利英 and 清水 三聡 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {立体チャネルトランジスタ応用に向けた選択成長GaNの異方性エッチング},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816739,
  author = {佐々木 杏民 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {n型SiCのエピタキシャル層の正孔ライフタイムがpnダイオード特性に与える影響},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816738,
  author = {佐々 康平 and 久恒 和也 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {酸化セリウムを挿入したMIMキャパシタの充放電特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813965,
  author = {Takuya Hoshii and Kazuyoshi Furukawa and Kuniyuki Kakushima and Masahiro Watanabe and Naoyuki Shigyo and Takuya Saraya and Toshihiko Takakura and Kazuo Itou and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Iriya Muneta and Hitoshi Wakabayashi and Sinichi Nishizawa and Kazuo Tsutsui and Toshiro Hiramoto and Hiromichi Ohashi and Hiroshi Iwai},
  title = {Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816744,
  author = {松浦 賢太朗 and 清水 淳一 and 外山 真矢人 and 大橋 匠 and 宗田 伊理也 and 石原 聖也 and 角嶋 邦之 and 筒井 一生 and 小椋 厚志 and 若林 整},
  title = {大面積集積化に向けたスパッタMoS2薄膜を用いたTop-Gate nMISFETs},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816743,
  author = {小川 達博 and 名取 鼓太郎 and 星井 拓也 and 仲武 昌史 and 渡辺 義夫 and 永山 勉 and 樋口 隆弘 and 加藤 慎一 and 谷村 英昭 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {フラッシュランプアニールおよびポストアニールで活性/不活性化したSi中Asの軟X線光電子分光による評価},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816742,
  author = {谷川 晴紀 and 松浦 賢太朗 and 濱田 昌也 and 坂本 拓朗 and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタMoS2膜の HfO2膜越し硫化における表面残留硫黄除去},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816740,
  author = {五十嵐 智 and 松浦 賢太朗 and 濱田 昌也 and 谷川 晴紀 and 坂本 拓朗 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {保護膜を通したフォーミングガスアニールによるスパッタMoS2 膜の結晶性改善},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816731,
  author = {神林 郁哉 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {Si(111)基板上に成長したInAs極薄膜のラマン分光法による歪み評価},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816732,
  author = {久恒 和也 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {CeOxを挿入したMIMキャパシタの静電容量の過渡応答特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816733,
  author = {井上 毅哉 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {シリコン縦型パワーデバイスへのひずみ導入によるオン抵抗低減の基礎的検討},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816734,
  author = {清水 孝 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {TMAHによる表面処理のp型GaN/金属コンタクト特性への影響},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816735,
  author = {鶴田 脩真 and 星井 拓也 and 中島 昭 and 西澤 伸一 and 大橋 弘通 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {AlGaN/GaN 界面準位が分極接合基板上 p-MOSFET の電流特性に与える影響},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813968,
  author = {Kazuya Hisatsune and Yoshihisa Takaku and Kohei Sasa and Takuya Hoshii and Iriya Muneta and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {Charge and Discharge Characteristics of On-chip CeOx Electric Double Layer Decoupling Capacitors},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816736,
  author = {久永 真之佑 and 渡部 拓巳 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {凹凸AlGaN層導入によるAlGaN/GaN HEMT構造のコンタクト抵抗低減手法におけるドットアレイ状平面パターンのサイズ効果},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816737,
  author = {岩塚 春樹 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {Siを導入したHfO2のMIMキャパシタの容量特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816730,
  author = {濱田拓也 and 向井勇人 and 高橋言緒 and 井手利英 and 清水三聡 and 星井拓也 and 角嶋邦之 and 若林整 and 岩井洋 and 筒井一生},
  title = {FinFET応用に向けた選択成長GaNチャネルの電気特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100814262,
  author = {I. Muneta and Danial B. Z. and N. Hayakawa and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {Magnetic Force Microscopy Image Measured on MoS2 Thin Film Sputtered on CaF2 (111) Substrate},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813959,
  author = {K. Kakushima and T. Hoshii and M. Watanabe and N. Shigyo and K. Furukawa and T. Saraya and T. Takakura and K. Itou and M. Fukui and S. Suzuki and K. Takeuchi and I. Muneta and H. Wakabayashi and Y. Numasawa and A. Ogura and S. Nishizawa and K. Tsutsui and T. Hiramoto and H. Ohashi and H. Iwai},
  title = {New methodology for evaluating minority carrier lifetime for process assessment},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813957,
  author = {C. Y. Su and T. Hoshii and I. Muneta and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima},
  title = {Interface State Density of Atomic Layer Deposited Al2O3 on Beta-Ga2O3},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813958,
  author = {D. Saito and I. Muneta and T. Hoshii and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima},
  title = {Reliability of SiC Schottky Diodes with Mo2C Electrode},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813956,
  author = {H. Kataoka and H. Iwai and T. Hoshii and I. Muneta and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima},
  title = {A Defect Density Profile Extraction Method for GaN Epi-Wafers},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100904004,
  author = {大橋 匠 and 坂本 拓朗 and 松浦 賢太朗 and 清水 淳一 and 外山 真矢人 and 石原 聖也 and 日比野 祐介 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 小椋 厚志 and 若林 整},
  title = {Migration制御したスパッタリング法による2次元層状MoS2成膜},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100818000,
  author = {K. Matsuura and J. Shimizu and M. Toyama and T. Ohashi and I. Muneta and S. Ishihara and K. Kakushima and K. Tsutsui and A. Ogura and H. Wakabayashi},
  title = {Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate},
  booktitle = {2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings},
  year = 2018,
}

@inproceedings{CTT100904005,
  author = {坂本 拓朗 and 大橋 匠 and 松浦 賢太朗 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタの低パワー化によるMoS2薄膜のキャリヤ濃度低減},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100904006,
  author = {Zulkornain Bin Danial and 宗田 伊理也 and 早川 直希 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {Sputtered MoS2 Thin Film Formation on CaF2 (111) Substrate},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100904007,
  author = {安重 英祐 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {ソース/ドレイン逆凹型コンタクト構造による横型積層シリコンナノワイヤFETにおける自己発熱効果の緩和},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100830066,
  author = {Eisuke Anju and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Self-Heating-Effect-Free p/n-Stacked-NW on Bulk-FinFETs and 6T-SRAM Layout},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100786669,
  author = {Kazuo Tsutsui and Tomohiro Matsushita and Takayuki Muro and Yoshitada Morikawa and Kotaro Natori and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kouichi Hayashi and Fumihiko Matsui and Toyohiko Kinoshita},
  title = {Analyses of 3D Atomic Arrangements of Impurity Atoms Doped in Silicon by Spectro-Photoelectron Holography Technique},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100830068,
  author = {Suguru Tatsunokuchi and I. Muneta and T. Hoshii and H. Wakabayashi and K. Tsutsui and HIROSHI IWAI and K. Kakushima},
  title = {Photovoltaic Properties of Lateral Ultra-Thin Si p-i-n structure},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100904002,
  author = {Chen-Yi Su and Takuya Hoshii and Iriya Muneta and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Kuniyuki Kakushima},
  title = {Initial trap and hysteresis analysis of Atomic Layer Deposited Al2O3 on b-Ga2O3},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100786668,
  author = {Kotaro Natori and Tatsuhiro Ogawa and Takuya Hoshii and Tomohiro Matsushia and Takayuki Muro and Toyohiko Kinoshita and Yoshitada Morikawa and Kuniyuki Kakushima and Fumihiko Matsui and Kouichi Hayashi and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {Atomic scale analyses of As doped in Si by soft X-ray photoelectron spectroscopy and spectro-photoelectron holography},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100830067,
  author = {Suguru Tatsunokuchi and Iriya Muneta and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Kuniyuki Kakushima},
  title = {Photovoltaic Properties of Lateral Si Nano Wall Solar Cells},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100809869,
  author = {筒井一生 and 角嶋邦之 and 星井 拓也 and 中島 昭 and 西澤 伸一 and 若林整 and 宗田伊理也 and 佐藤 克己 and 末代 知子 and 齋藤 渉 and 更屋 拓哉 and 伊藤 一夫 and 福井 宗利 and 鈴木 慎一 and 小林 正治 and 高倉 俊彦 and 平本 俊郎 and 小椋 厚志 and 沼沢 陽一郎 and 大村 一郎 and 大橋 弘通 and 岩井洋},
  title = {三次元スケーリングによるIGBTのV[CEsat]低減の実験的検証 (電子デバイス 半導体電力変換合同研究会 パワーデバイス・パワーエレクトロニクスとその実装技術)},
  booktitle = {電気学会研究会資料. EDD = The papers of technical meeting on electron devices, IEE Japan},
  year = 2017,
}

@inproceedings{CTT100811306,
  author = {K. Tsutsui and K. Kakushima and T. Hoshii and A. Nakajima and S. Nishizawa and H. Wakabayashi and I. Muneta and K. Sato and T. Matsudai and W. Saito and T. Saraya and K. Itou and M. Fukui and S. Suzuki and M. Kobayashi and T. Takakura and T. Hiramoto and A. Ogura and Y. Numasawa and I. Omura and H. Ohashi and H. Iwai},
  title = {3D Scaling for Insulated Gate Bipolar Transistors (IGBTs) with Low Vce(sat)},
  booktitle = {Proceedings of International Conference on ASIC},
  year = 2017,
}

@inproceedings{CTT100808048,
  author = {M. Toyama and T. Ohashi and K. Matsuura and J. Shimizu and I. Muneta and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {TiN/Ti Ohmic Contact for Sputtered-MoS2 Film using Forming-Gas Annealing},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100786678,
  author = {Takuya Hoshii and Rumi Takayama and Akira Nakajima and Shin-ichi Nishizawa and Hiromichi Ohashi and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {Back-gate effect on p-channel GaN MOSFETs on Polarization-Junction Substrate},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100788575,
  author = {N. Hayakawa and I. Muneta and T. Ohashi and K. Matsuura and J. Shimizu and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {Conductance control by tunneling-barrier thickness optimizations in Fe/Al2O3/MoS2 structure},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100780961,
  author = {J. Shimizu and T. Ohashi and K. Matsuura and I. Muneta and K. Kakushima and K. Tsutsui and N. Ikarashi and H. Wakabayashi},
  title = {Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET},
  booktitle = {2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM)},
  year = 2017,
}

@inproceedings{CTT100780963,
  author = {S. Hirano and J. Shimizu and K. Matsuura and T. Ohashi and I. Muneta and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {Crystallinity improvement using migration-enhancement methods for sputtered-MoS2 films},
  booktitle = {2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM)},
  year = 2017,
}

@inproceedings{CTT100830070,
  author = {K. Kakushima and Yuta Ikeuchi and T. Hoshii and I. Muneta and H. Wakabayashi and K. Tsutsui and H. Iwai and T. Kikuchi and S. Ishikawa},
  title = {Low Temperature Ohmic Contact for p-type GaN using Mg Electrodes},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100830069,
  author = {K. Kakushima and T. Suzuki and T. Hoshii and I. Muneta and H. Wakabayashi and HIROSHI IWAI and Y. Aoki,H. Nohira Aoki and KAZUO TSUTSUI},
  title = {Formation of Mo2C Electrodes using Stacked Sputtering Process for Thermally Stable SiC Schottky Barrier Diodes},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100808047,
  author = {岡田 泰典 and 山口 晋平 and 大橋 匠 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {Resistivity Reduction of Low-Carrier-Density Sputtered-MoS2 Film using Fluorine Gas},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100903975,
  author = {早川直希 and 宗田伊理也 and 大橋匠 and 松浦賢太朗 and 清水淳一 and 角嶋邦之 and 筒井一生 and 若林整},
  title = {トンネル電極を形成したスパッタ MoS2膜における電流の障壁膜厚依存性},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100903976,
  author = {龍口 傑 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 岩井 洋 and 角嶋 邦之},
  title = {横型Siナノウォール太陽電池の発電特性に関する検討},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100903977,
  author = {篠原 健朗 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {nMOSFET応用に向けた窒化ハフニウムの硫化による二硫化ハフニウム膜の作製},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100903978,
  author = {外山 真矢人 and 大橋 匠 and 松浦 賢太朗 and 清水 淳一 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタリング法で堆積したMoS2薄膜へのコンタクト抵抗と熱処理依存性},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100830074,
  author = {Y. M. Lei and T. Kaneko and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima and M. Furuhashi and S. Tomohisa and S. Yamakawa},
  title = {Influence of Interface ALD-SiO2 Layer for Lanthanum Silicate Gate Dielectrics for 4H-SiC MOS Capacitors},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100830077,
  author = {Tomoyuki Suzuki and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Hiroshi Nohira and Kuniyuki Kakushima},
  title = {Properties of SiC Schottky Junction with Laminated Molybdenum/Carbon Electrode},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100786667,
  author = {K. Kakushima and T. Hoshii and K. Tsutsui and A. Nakajima and S. Nishizawa and H. Wakabayashi and I. Muneta and K. Sato and T. Matsudai and W. Saito and T. Saraya and K. Itou and M. Fukui and S. Suzuki and M. Kobayashi and T. Takakura and T. Hiramoto and A. Ogura and Y. Numasawa and I. Omura and H. Ohashi and H. Iwai},
  title = {Experimental Verification of a 3D Scaling Principle for Low Vce(sat) IGBT},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100830071,
  author = {Y. Ikeuchi and T. Hoshii and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima and S.Ishikawa},
  title = {Characteristics of Fe/pGaN Contact upon Annealing Process},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100903979,
  author = {安重 英祐 and 大橋 匠 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {Accumulation-Mode積層型ナノワイヤCMOSデバイスのチャネル不純物濃度およびゲート電極仕事関数の依存性},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100780956,
  author = {J. Shimizu and T. Ohashi and K. Matsuura and I. Muneta and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Low-Temperature Forming-Gas Annealing for 3D-IC},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100830120,
  author = {Akira Nakajima and Shunsuke Kubota and Kazuo Tsutsui and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai and Sin-ichi Nishizawa and Hiromichi Ohashi},
  title = {Monolithic Integration of GaN-based Normally-off P- and N-channel MOSFETs},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100780948,
  author = {K. Matsuura and T. Ohashi and I. Muneta and S. Ishihara and N. Sawamoto and K. Kakushima and K. Tsutsui and A. Ogura and H. Wakabayashi},
  title = {Sulfurization in Sulfur Vapor for Sputtered-MoS2 Film},
  booktitle = {Proc. of 47th IEEE Semiconductor Interface Specialists Conference (SISC)},
  year = 2016,
}

@inproceedings{CTT100830121,
  author = {Yusuke Takei and Tomohiro Shimoda and Wataru Saito and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai},
  title = {Lowering Contact Resistances on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers: Effects of Configuration and Size of Lateral Patterns},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100830122,
  author = {Shunsuke Kubota and Rei Kayanuma and Akira Nakajima and Shin-ichi Nishizawa and Shin-ichi Nishizawa and Hiromichi Ohashi and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {P-Channel AlGaN/GaN MOSFETs for Normally-Off Operation},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100830127,
  author = {A. Nakajima and S. Kubota and R. Kayanuma and K. Tsutsui and K. Kakushima and H. Wakabayashi and H. Iwai and S. Nishizawa and H. Ohashi},
  title = {An overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100830125,
  author = {Akira Nakajima and Shin-Ichi Nishizawa and Hiromichi Ohashi and Rei Kayanuma and Kazuo Tsutsui and Shunsuke Kubota and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai},
  title = {GaN-Based Monolithic Power Integrated Circuit Technology with Wide Operating Temperature on Polarization-Junction Platform},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100830262,
  author = {M. Okamoto and K. Kakushima and Y. Kataoka and K. Natori and H. Wakabayashi and K. Tsutsui and H. Iwai and W. Saito},
  title = {Dependence of Ti/C Ratio on Ohmic contact with TiC electrode for AlGaN/GaN structure},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100676725,
  author = {N. Nishizawa and T. Kawanago and K. Kakushima and H. Munekata},
  title = {Formation of Ultra-thin, Crystalline AlOx Tunnel Barrier on GaAs and Vice Versa},
  booktitle = {Abstracts},
  year = 2014,
}

@inproceedings{CTT100830263,
  author = {T. Shoji and K. Kakushima and Y. Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
  title = {Effect of Surface Potential Control and Interface States for Silicon Nanowire Solar Cells},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830265,
  author = {Kazuo Tsutsui and Masayuki Kamiya and Yusuke Takei and Wataru Saito and Kuniyuki Kakushima and Hitoshi Wakabayashi and Yoshinori Kataoka and Hiroshi Iwai},
  title = {Low-resistive Contact Formation on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830266,
  author = {Y. Takei and M. Okamoto and W. Saito and K. Tsutsui and K. Kakushima and H. Wakabayashi and Y. Kataoka and H. Iwai},
  title = {Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830478,
  author = {T. Kato and T.Inamura and A.Sasaki and K.Aoki and K.Kakushima and Y.Kataoka and A. Nishiyama and N. Sugii and H.Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
  title = {Thickness-dependent electrical characterization of β‐FeSi2},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830473,
  author = {Y. Ito and H. Hori and K. Tsutsui and K. Kakushima and H. Wakabayashi and Y.Kataoka and A.Nishiyama and N. Sugii and K. Natori and H. Iwai},
  title = {Proposal of junction formation process for solar cells made of silicon microstructures},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830471,
  author = {K. Terayama and A. Nakajima and S. Nishizawa and H. Ohasi and K. Kakushima and H. Wakabayashi and K. Tsutsui and H. Iwai},
  title = {Calculation of ultimate on-resistance in GaN lateral HFETs using device simulation},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830277,
  author = {T. Ohashi and H. Wakabayashi and K. Kakushima and N. Sugii and A. Nishiyama and Y. Kataoka and K. Natori and K. Tsutsui and H. Iwai},
  title = {Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830480,
  author = {M. Motoki and K. Kakushima and Y. Kataoka and A. Nishiyama and N. Sugii and H.Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
  title = {Effect of Annealing Temperature on Sheet Resistance of Ni Germanide Formed by Multi-Layered Ni and Ge Films},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830479,
  author = {Minjae Yoon and K. Terayama and A. Nakajima and S. Nichizawa and H. Ohasi and K. Kakushima and H. Wakabayashi and K. Tsutsui and H. Iwai},
  title = {Investigation into scaling law in AlGaN/GaN Fin field effect transistors by device simulation},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830485,
  author = {Chunmeng Dou and Kakushima and Y. Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
  title = {Determination of oxide traps distribution in high-k/InGaAs MOS capacitor by capacitance-voltage measurement},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830484,
  author = {M. Okamoto and K. Kakushima and Y. Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and H. Iwai and W. Saito},
  title = {An Ohmic contact process for AlGaN/GaN Structures using TiSi2 electrodes},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830483,
  author = {Y. Nakamura and K. Kakushima and Y. Kataoka and A. Nishiyama and H. Wakabayashi and N. Sugii and K. Tsutsui and K. Natori and H. Iwai},
  title = {Measurement of flat-band voltage shift using multi-stacked dielectric film},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830481,
  author = {H. Hasegawa and Y.Wu and J.Song and K. Kakushima and Y.Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
  title = {Improvement of tunnel FET performance using narrow bandgap semiconductor silicide /Si hetero-structure source electrod},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830474,
  author = {M. Kamiya and Y. Takei and W. Saito and K. Kakushima and H. Wakabayashi and Y. Kataoka and K. Tsutsui and H. Iwai},
  title = {Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672966,
  author = {Shuhei Hosoda and Kamale Tuokedaerhan and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Atomically flat interface of La-silicate/Si with W2C gate electrodes},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830267,
  author = {Akira Nakajima and Sin-ichi Nishizawa and Hiromichi Ohashi and Hiroaki Yonezawa and Kazuo Tsutsui and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai},
  title = {One-Chip Operation of GaN-Based p-Channel and N-Channel Heterojunction Field Effect Transistors},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100669171,
  author = {Mari Okamoto and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {An Ohmic Contact Process for AlGaN/GaN Structures using TiS},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100669170,
  author = {劉 璞誠 and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Characterization of Two-Dimensional Hole Gas at GaN/AlGaN Heterointerface},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100780941,
  author = {T. Ohashi and K. Suda and S. Ishihara and N. Sawamoto and S. Yamaguchi and K. Matsuura and K. Kakushima and N. Sugii and A. Nishiyama and Y. Kataoka and K. Natori and K. Tsutsui and H. Iwai and A. Ogura and Hitoshi Wakabayashi},
  title = {Multi-Layered MoS2 Thin Film Formed by High-Temperature Sputtering for Enhancement-Mode nMOSFETs},
  booktitle = {Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials},
  year = 2014,
}

@inproceedings{CTT100674681,
  author = {小路智也 and 伊藤勇磨 and 堀隼人 and 宮澤遼太 and 嘉藤貴史 and 角嶋邦之 and 若林整 and 筒井一生 and 片岡好則 and 岩井洋},
  title = {Surface States, Potential and Interface Control for Si Nanowire PV},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674087,
  author = {神谷真行 and 武井優典 and 齋藤渉 and 角嶋邦之 and 若林整 and 片岡好則 and 筒井一生 and 岩井洋},
  title = {AlGaN/GaN高電子移動度トランジスタへの凹凸AlGaN層導入による低抵抗コンタクト形成の可能性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674053,
  author = {伊藤勇磨 and 堀隼人 and 筒井一生 and 角嶋邦之 and 若林整 and 片岡好則 and 西山彰 and 杉井信之 and 名取研二 and 岩井洋},
  title = {微細Si構造を利用した太陽電池に適した接合プロセスの提案},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674052,
  author = {米澤宏昭 and 萱沼怜 and 中島 昭 and 西澤伸一 and 大橋弘通 and 筒井一生 and 角嶋邦之 and 若林整 and 岩井洋},
  title = {広い温度範囲で動作するAlGaN/GaN系Pチャネル型HFET},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674051,
  author = {寺山一真 and 中島 昭 and 西澤伸一 and 大橋弘通 and 角嶋邦之 and 若林整 and 筒井一生 and 岩井洋},
  title = {デバイスシミュレーションによる横型GaNパワーデバイスの極限オン抵抗の試算},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674050,
  author = {堀隼人 and 伊藤勇磨 and 筒井一生 and 角嶋邦之 and 若林整 and 片岡好則 and 西山彰 and 杉井信之 and 名取研二 and 岩井洋},
  title = {薄膜SOI太陽電池の発電特性への基板バイアス効果},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674049,
  author = {武井優典 and 岡本真里 and マンシン and 萱沼怜 and 神谷真行 and 齋藤渉 and 筒井一生 and 角嶋邦之 and 若林整 and 片岡好則 and 岩井洋},
  title = {AlGaN/GaN系2次元電子ガスへのコンタクト特性における電極材料およびAlGaN膜厚依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674048,
  author = {佐々木亮人 and 青木克明 and 片岡好則 and 小林 薫平 and 稲村太一 and 角嶋邦之 and 岩井洋},
  title = {バリウムシリサイド半導体を用いたショットキー型太陽電池に関する研究},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674046,
  author = {松川佳弘 and 岡本真里 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 齋藤渉},
  title = {AlGaN/GaN上のTi/C/TiN電極のコンタクト抵抗：Ti/C膜厚及び比率依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674044,
  author = {Yoon Minjae and 寺山一真 and 中島 昭 and 西澤伸一 and 大橋弘通 and 角嶋邦之 and 若林整 and 筒井一生 and 岩井洋},
  title = {デバイスシミュレーションによるAlGaN/GaN系FinFETsにおけるスケーリング則の検証},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674010,
  author = {雷 一鳴 and 宗清修 and 角嶋邦之 and 川那子高暢 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 古橋 壮之 and 三浦 成久 and 山川 聡},
  title = {ATR-FTIR法を用いた熱処理によるLa2O3/SiC界面反応の解析},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674004,
  author = {劉 璞誠 and 竇春萌 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {コンダクタンス法によるAlGaN/GaNヘテロ接合界面トラップに関する研究},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674002,
  author = {譚錫昊 and 川那子高暢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {高電圧ストレスによるAlGaN/GaNの界面とバルクトラップの測定に関する研究},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673999,
  author = {元木雅章 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {NiとGe積層薄膜によって形成したNiGe膜のシート抵抗と熱処理温度の関係},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673477,
  author = {長谷川明紀 and 呉研 and 宋 禛漢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Mg/Si極薄膜積層の熱処理を用いて作製したMg2Siの赤外線吸収特性評価},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673475,
  author = {小路智也 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Siナノワイヤー曲面における保護膜界面準位密度の研究},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673474,
  author = {岡本真里 and 松川佳弘 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 大橋弘通 and 岩井洋 and 齋藤渉},
  title = {TiB2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673473,
  author = {今村浩章 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {積層シリサイド化スパッタプロセスにより作成したNiシリサイドショットキーダイオードの評価},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673472,
  author = {吉原亮 and 元木雅章 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Pを導入したNiSi2/n-Geコンタクトの電気特性と不純物拡散の様子},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673471,
  author = {細田修平 and Tuokedaerhan Kamale and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {W2C電極導入によるLa-silicate/Siにおける平坦な界面の実現},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673468,
  author = {関拓也 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Si(110),(111)基盤上で熱処理による界面反応で形成したLa-silicateゲート絶縁膜の物理的理解に関する研究},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673467,
  author = {大嶺洋 and ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ and 角嶋邦之 and 西山彰 and 杉井信之 and 片岡好則 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {La2O３/ InGaAs界面ラフネスに及ぼすALDプロセスの影響},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673466,
  author = {稲村太一 and 嘉藤貴史 and 佐々木亮人 and 青木克明 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {β-FeSi2の抵抗率熱処理依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673464,
  author = {LiWei and 佐々木亮人 and 大図 秀行 and 青木克明 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {単斜晶WO3薄膜抵抗率の熱処理依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673463,
  author = {陳江寧 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 齋藤渉},
  title = {La2O３ゲート絶縁膜を用いたAlGaN/GaNデバイスのプロセス依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673462,
  author = {呉研 and 長谷川明紀 and 角嶋邦之 and 渡辺  孝信 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Mg2Si-Siヘテロ接合トンネルFET特性の構造依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673460,
  author = {Tuokedaerhan Kamale and Shuhei Hosoda and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {W2Cゲート電極によるLa-silicate MOSFETの移動度改善},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673418,
  author = {ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ and 大嶺洋 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {低界面準位とsub-nm CETを有するLa2O３/ In0.53Ga0.47Asゲートスタックの実現},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673381,
  author = {小路智也 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {立体Si構造における局所的な界面準位密度の抽出},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673380,
  author = {大嶺洋 and ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ and 角嶋邦之 and 岩井洋},
  title = {La2O３ gate dielectrics for InGaAs channel using ALD process},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673379,
  author = {ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ and 大嶺洋 and 角嶋邦之 and 岩井洋},
  title = {Highly Scalable La2O３/InGaAs Gate Stack with Low Interface State Density},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673377,
  author = {中島 昭 and Hiroaki Yonezawa and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and 西澤伸一 and 大橋弘通 and Hitoshi Wakabayashi and HIROSHI IWAI},
  title = {One-chip operation of GaN-based P-channel and N-channel Heterojunction Field Effect Transistors},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673190,
  author = {Atsushi Takemasa and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Electrical characteristics of n-type diamond contacts with Ti, Ni, NiSi2 and Ni3P electrodes},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673189,
  author = {Takumi Ohashi and Hitoshi Wakabayashi and Kuniyuki KAKUSHIMA and Nobuyuki Sugii and Akira Nishiyama and Yoshinori Kataoka and Kenji Natori and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673188,
  author = {Hayato Hori and Yuuma Itou and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and HIROSHI IWAI},
  title = {Effects of substrate back bias on solar cells formed on thin SOI structures},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673186,
  author = {Sin Man and Rei Kayanuma and Yusuke Takei and T. Takahashi and M. Shimizu and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and HIROSHI IWAI},
  title = {A Study on the Fabrication of GaN-FinFET Using  Selective Area Growth Method},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673182,
  author = {Kazuma Terayama and 中島 昭 and 西澤伸一 and 大橋弘通 and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Caluculation of ultimate on-resistance in GaN lateral HFETs  using device simulation},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673181,
  author = {Hiroaki Yonezawa and Rei Kayanuma and 中島 昭 and 西澤伸一 and 大橋弘通 and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and HIROSHI IWAI},
  title = {AlGaN/GaN-based p-channel HFETs with wide-operating temperature},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673180,
  author = {Yuuma Itou and Hayato Hori and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and HIROSHI IWAI},
  title = {Schottky barrier height reduction process for silicide/Si interfaces},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673149,
  author = {Masayuki Kamiya and Yusuke Takei and 齋藤渉 and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and HIROSHI IWAI},
  title = {Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673148,
  author = {Yusuke Takei and Mari Okamoto and S. Man and Ryosuke Kayanuma and Masayuki Kamiya and 齋藤渉 and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and HIROSHI IWAI},
  title = {Contact resistances depending on AlGaN layer thickness  for AlGaN/GaN HEMT structures},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673145,
  author = {Yoshihiro Matsukawa and Mari Okamoto and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {An Ohmic Contact Process for AlGaN/GaN Structures using TiCElectrode},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673095,
  author = {Takafumi Katou and Taichi Inamura and 佐々木亮人 and 青木克明 and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Electrical characteristic of b-FeSi2},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673093,
  author = {雷 一鳴 and Shu Munekiyo and Kuniyuki KAKUSHIMA and Takamasa Kawanago and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI and M. Furuhashi and N. Miura and S. Yamakawa},
  title = {Interface reaction analysis of La2O3/SiC upon annealing by ATR-FTIR},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673055,
  author = {劉 璞誠 and 中島 昭 and Kuniyuki KAKUSHIMA and T. Makino and M. Ogura and 西澤伸一 and HIROSHI IWAI and 大橋弘通},
  title = {A study on mobility of 2D hole gas in AlGaN/GaN heterostructure with piezo- and spontaneous polarizationn},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672974,
  author = {Masaaki Motoki and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Dependence between Sheet Resistance and Annealing Temperature of Ni Germanide Formed by Multi-Layered Ni and Ge Films},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672973,
  author = {Hiroki Hasegawa and Y. Wu and 宋 禛漢 and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {The Workshop on Future Trend of Nanoelectronics:WIMNACT 39},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672972,
  author = {Yoshinori Nakamura and Kuniyuki KAKUSHIMA and 片岡好則 and Akira Nishiyama and Hitoshi Wakabayashi and Nobuyuki Sugii and HIROSHI IWAI},
  title = {Measurement of flat-band voltage shift using multi-stacked dielectric film},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672971,
  author = {Tomoya Shoji and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Silicon Nanowire Solar Cells: Surface Passivation and Interface Analysis},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672969,
  author = {Hiroaki Imamura and Taichi Inamura and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Characterization of Thin NiSi2 Films by Stacked Silicidation Sputtering Process with Kr Gas},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672968,
  author = {宋 禛漢 and Kazuki Matsumoto and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Reduction of the resistivities of Ni Silicide formed by the reaction of Si nanowire and Ni thin films},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672967,
  author = {吉原亮 and Masaaki Motoki and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Interface control process toward un-pinned metal/germanium Schottky contact},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672909,
  author = {Jiangning Chen and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI and 齋藤渉},
  title = {Electrical characteristics of AlGaN/GaN HEMT with La2O3 gate dielectricsn},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672908,
  author = {wei li and 佐々木亮人 and 大図秀行 and 青木克明 and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Resistivity Measurement of Monoclinic Thin Tungsten Oxide Film Due to Annealing Processesn},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672427,
  author = {K. Tuokedaerhan and Shuhei Hosoda and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode},
  booktitle = {K. Tuokedaerhan, S. Hosoda, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai, “Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode”, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan},
  year = 2014,
}

@inproceedings{CTT100672409,
  author = {Y. Wu and Hiroki Hasegawa and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and 片岡好則 and Kenji Natori and HIROSHI IWAI},
  title = {Influence of structure parameter on Mg2Si-Si Hetero-junction Tunneling FET},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672405,
  author = {unknown unknown and 竇春萌 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {A study on Resistive Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode with CeOx Buffer Layer},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672397,
  author = {ダリューシュザデ and Hiroshi Oomine and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Highly Scalable La2O3 /InGaAs Gate Stack with Low Interface State Density},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672393,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT,},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672372,
  author = {DARYOUSH ZADEH and Hiroshi Oomine and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Low DitHigh-k/In0.53Ga0.47As Gate Stack with CET down to 0.73 nm and Thermally Stable Silicide Contact by Suppression of Interfacial Reaction},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672369,
  author = {Y. Wu and Hiroki Hasegawa and Kuniyuki KAKUSHIMA and 大毛利健治 and T. Watanabe and Hitoshi Wakabayashi and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and 片岡好則 and Kenji Natori and Keisaku Yamada and HIROSHI IWAI},
  title = {Influence of Band Discontinuities at Source-Channel contact in Tunnel FET Performance},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100669358,
  author = {K. Tuokedaerhan and Shuhei Hosoda and Yoshinori Nakamura and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Influence of Carbon Incorporation in W Gate Electrode for La-silicate Gate Dielectrics},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672964,
  author = {Atsushi Takemasa and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Electrical characteristics of Ti, Ni, NiSi2 and Ni3P/n-diamond contacts},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672963,
  author = {関拓也 and Kuniyuki KAKUSHIMA and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Physical understanding of La-silicate gate dielectrics thermally formed by interface reaction on Si(110) and (111)},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672961,
  author = {Hiroshi Oomine and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and Akira Nishiyama and Nobuyuki Sugii and 片岡好則 and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Effect of pretreatment for high-/k//InGaAs interface property},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672910,
  author = {Taichi Inamura and Takafumi Katou and 佐々木亮人 and 青木克明 and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {A study on silicide semiconductors for high efficiency thin film photovoltaic devices},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100669174,
  author = {宋 禛漢 and Kazuki Matsumoto and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and 杉井信之 and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Resistivity of Ni silicide nanowires and its dependence on Ni film thickness used for the formation},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100669173,
  author = {Shuhei Hosoda and K. Tuokedaerhan and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Reliability of La-silicate MOS capacitors with tungsten carbide gate electrode for scaled EOT},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100830488,
  author = {Shuhei Hosoda and Kamale Tuokedaerhan and Kuniyuki Kakushima and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kenji Natori and Hiroshi Iwai},
  title = {Reliability of La-Silicate Mos Capacitors With Tungsten Carbide Gate Electrode},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100669355,
  author = {Taichi Inamura and 佐々木亮人 and 青木克明 and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {A stacked sputtered process for β-FeSi2 formation},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100669354,
  author = {Taichi Inamura and 佐々木亮人 and 青木克明 and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {A stacked sputtered process for β-FeSi2 formation},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100669175,
  author = {Hiroshi Oomine and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Electrical characterization of atomic layer deposited La2O3 films on In0.53Ga0.47AAs substrates},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100830490,
  author = {T. Seki and T. Kawanago and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and H. Iwai},
  title = {Electrical and Infrared Absorption Studies on La-silicate/Si Interface},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654594,
  author = {吉原亮 and Yuta Tamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical characterization of atomically flat NiSi2 Schottky diode},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654593,
  author = {Kazuki Matsumoto and 小山将央 and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Ni silicidation for Si fin and nanowire structures},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654592,
  author = {Michihiro Hosoda and Yeonghun Lee and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Size dependent phonon limited electron mobility of Si nanowire},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654591,
  author = {Kana Tsuneishi and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical properties of Tm2O3 gate dielectric and its scaling issues},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654590,
  author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A novel Ni silicidation technology for Schottky diode formation},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654588,
  author = {田中祐樹 and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Impact of annealing on structural change in amorphous carbon: effect of Fe catalyst},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654585,
  author = {shinichi kano and 竇春萌 and unknown unknown and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Impact of metal electrode material on resistive switching properties of Ce oxides},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654583,
  author = {Wei Li and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface state density measurements of 3D silicon channel by charge pumping method},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654582,
  author = {Ryuji Hosoi and Yuya Suzuki and ダリューシュザデ and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654580,
  author = {中島一裕 and Wei Li and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface state density measurements of 3D silicon channel by charge pumping method},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654579,
  author = {中島一裕 and Wei Li and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface state density measurements of 3D silicon channel by charge pumping method},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654578,
  author = {Takuya Suzuki and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and HIROSHI IWAI and 安田哲二},
  title = {Formation and electrical characterization of MgO - incorporated La2O3 gate insulators by ALD},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654577,
  author = {来山大祐 and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {[Effect of Silicate Formation at Metal Gate/High-k Interface on Electrical Characteristics of La2O3 gated MOS Devices},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654576,
  author = {K.Tuokedaerhan and 金田翼 and Kuniyuki KAKUSHIMA and Ahmet Parhat and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Impact of annealing ambient for La2O3/Si capacitor},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654574,
  author = {Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {An analytical model of a tunnel FET with Schottky junction},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654573,
  author = {竇春萌 and Soshi Sato and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Si nanowire FET with asymmetric channel},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654572,
  author = {DARYOUSH ZADEH and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Characterization of metal Schottky junction for InGaAs substrate},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654165,
  author = {unknown unknown and A. Ablimit and Kuniyuki KAKUSHIMA and パールハットアヘメト and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electron transport in ballistic diodes: influence of phonon generation in drain region},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654161,
  author = {マイマイティ マイマイティレャアティ and 関拓也 and Kuniyuki KAKUSHIMA and Ahmet Parhat and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Evaluation of oxide traps in La based oxides for direct high-k/Si capacitor},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654160,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Nitrogen incorporated La-silicate gate dielectric with high scalability},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652202,
  author = {Kuniyuki KAKUSHIMA and Jun Kanehara and takeo hattori and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Boron depth profile of a plasma immersed substrate by XPS analysis},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100649144,
  author = {小山将央 and Naoto Shigemori and Kenji Ozawa and Kiichi Tachi and Kuniyuki KAKUSHIMA and O. Nakatsuka and 大毛利健治 and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Keisaku Yamada and HIROSHI IWAI},
  title = {Si/Ni-Silicide Schottky Junctions with Atomically Flat Interfaces Using NiSi2 Source},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100649139,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Metal Inserted Poly-Si wirh High Temperature Annealing for Achieving EOT of 0.62nm in La-silicate MOSFET},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658364,
  author = {Hiroshi Oomine and ダリューシュザデ and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654663,
  author = {Tasuku Kaneda and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Influence of Flash Lamp Annealing on Electrical Characteristics of MOS Device with Si/ La2O3/n-Si Structure},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100658365,
  author = {関拓也 and Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Infrared absorption study of La-silicate gate dielectrics},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654598,
  author = {Kouhei Akita and Jun Kanehara and Hiroshi Nohira and Y. Izumi and TAKAYUKI MURO and 木下豊彦 and パールハットアヘメト and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and takeo hattori and HIROSHI IWAI},
  title = {[517]	Y. Miyata, K. Akita, J. Kanehara, H. Nohira, Y. Izumi, T. Muro, T. Kinoshita, P. Analysis of Boron Doped in Si Fin Structure by Soft X-ray Photoelectron Spectroscopy},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654596,
  author = {Jun Kanehara and Yusuke Takei and Youhei Miyata and Hiroshi Nohira and Y. Izumi and TAKAYUKI MURO and 木下豊彦 and パールハットアヘメト and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and takeo hattori and HIROSHI IWAI},
  title = {Depth Profiling of As with Various Chemical Bonding States Doped in Si Shallow Junction by Using Soft X-ray Photoelectron Spectroscopy},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658327,
  author = {Jiangning Chen and 鹿 国強 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658328,
  author = {Jiangning Chen and 鹿 国強 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658329,
  author = {Jiangning Chen and 鹿 国強 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658330,
  author = {shinichi kano and 竇春萌 and unknown unknown and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Transient Switching Characteristics of Ce-oxide Resistive Switching Devices},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658331,
  author = {Yuya Suzuki and ダリューシュザデ and Hiroshi Oomine and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface Engineering of La2O3/InGaAs Capacitors with High Temperature Stability},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658332,
  author = {田中祐樹 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface controlled metal contact for n-type diamonds},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658334,
  author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Stacked Ni-Silicidation Process for Schottky Barrier FET},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658335,
  author = {Kana Tsuneishi and Jiangning Chen and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A Robust Ohmic Contact Process for AlGaN/GaN using Ti-silicide electrodes},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658338,
  author = {Michihiro Hosoda and Kuniyuki KAKUSHIMA and Kenji Natori and S. Yamasaki and H. Ohashi and HIROSHI IWAI},
  title = {Carrier transport modeling in diamonds},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658354,
  author = {Kazuki Matsumoto and 小山将央 and Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Size dependent resistivity change of Ni-silicides in nano-region},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658356,
  author = {Yang Zhao and マイマイティ マイマイティレャアティ and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Separation of bulk and interface traps of La-silicate on Si(100) surface},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658357,
  author = {Yang Zhao and マイマイティ マイマイティレャアティ and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Separation of bulk and interface traps of La-silicate on Si(100) surface},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658358,
  author = {Yang Zhao and マイマイティ マイマイティレャアティ and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Separation of bulk and interface traps of La-silicate on Si(100) surface},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100657453,
  author = {shinichi kano and 竇春萌 and unknown unknown and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and 片岡好則 and Kenji Natori and Miranda Enrique and takeo hattori and HIROSHI IWAI},
  title = {Influence electrode materials on CeOx based resistive switching},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654913,
  author = {W. Feng and R. Hettiarachchi and Yeonghun Lee and Soshi Sato and Kuniyuki KAKUSHIMA and M. Sato and K. Fukuda and M. Niwa and K. Yamabe and Kenji Shiraishi and HIROSHI IWAI},
  title = {Fundamental origin of excellent low-noise property in 3D Si-MOSFETs ~Impact of charge-centroid in the channel due to quantum effect on 1/f noise ~},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654680,
  author = {Yuya Suzuki and ダリューシュザデ and Ryuji Hosoi and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical characteristics of La2O3/In0.53Ga0.47AAs capacitors with surface nitridation},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654679,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Characterization of Effective Electron Mobility in n/MOSFETs with Direct Contact La-silicate/Si Structure},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654678,
  author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and 中塚理 and パールハットアヘメト and Hiroshi Nohira and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical Properties of Ultrathin-Nickel-Silicide Schottky Diodes on Si(100)},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658361,
  author = {Taichi Inamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Formation of Fe-silicides using Multi-Stacking Sputtering Process},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658362,
  author = {Taichi Inamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Formation of Fe-silicides using Multi-Stacking Sputtering Process},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654668,
  author = {中島一裕 and Soshi Sato and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Dependence of Interface-State Density on Three Dimensional Silicon Structure Measured by Charge-Pumping Method},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100654667,
  author = {中島一裕 and Soshi Sato and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Dependence of Interface-State Density on Three Dimensional Silicon Structure Measured by Charge-Pumping Method},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100658363,
  author = {Hiroshi Oomine and ダリューシュザデ and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658366,
  author = {Atsushi Takemasa and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Impact of Surface Treatments for Metal Contact on p-type Diamonds},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658389,
  author = {Shuhei Hosoda and K. Tuokedaerhan and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Improvenents in interface, states with W-carbide metal gate for La2O3/si MOS Capacitor},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658390,
  author = {吉原亮 and Yuta Tamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A Novel Ohmic Contact Process for n-Ge Substrates},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658393,
  author = {宋  禛漢 and 小山将央 and Kazuki Matsumoto and Kuniyuki KAKUSHIMA and 中塚理 and 大毛利健治 and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Keisaku Yamada and HIROSHI IWAI},
  title = {Atomically flat Ni-silicide/Si interface using NiSi2 sputtering},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658395,
  author = {劉  璞誠 and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Transport characteristics of 2-dimensional hole gas in AlGaN/GaN},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658396,
  author = {Mari Okamoto and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Extraction of Energy Band Diagram of AlGaN/GaN with SiO2 Capped Annealing using X-ray Photoelectron Spectroscopy},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658546,
  author = {関拓也 and Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {International Symposium on Next-Generation Electronics(ISNE 2013)},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658549,
  author = {Michihiro Hosoda and Kuniyuki KAKUSHIMA and Kenji Natori and S. Yamasaki and H. Ohashi and HIROSHI IWAI},
  title = {On the electron conduction in n-diamond},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658611,
  author = {Kazuki Matsumoto and 小山将央 and Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical Analyses of Nickel Silicide Formed on Si Nanowires with 10-nm-width},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658699,
  author = {Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Interface State Density of Passivation/Nanowire Interface},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658700,
  author = {Kuniyuki KAKUSHIMA and 吉原亮 and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {A Low Temperature Ohmic Contact Process for n-type Ge Substrates},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658713,
  author = {Miranda Enrique and Takamasa Kawanago and Kuniyuki KAKUSHIMA and J. Sune and HIROSHI IWAI},
  title = {Modeling of the Output Characteristics of Advanced N-MOSFETs After a Severe Gate-to-Channel Dielectric Breakdown},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658718,
  author = {B.L.Yang and H. Wong and S. Dong and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Charge Trapping and Detrapping Characteristics CeO2/La2O3 Stack Gate Dielectrics},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100831028,
  author = {DARYOUSH ZADEH and Hiroshi Oomine and Yuya Suzuki and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659873,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface properties of La-silicate gate dielectrics on Si(110)surface},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100660319,
  author = {川那子高暢 and 角嶋邦之 and 岩井洋},
  title = {高速・低損失の電子デバイス／パワーデバイスの先導研究},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100660879,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100660886,
  author = {ダリューシュザデ and Hiroshi Oomine and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Scalable La-silicate Gate Dielectric on InGaAs Substrate with High Thermal Stability and Low Interface State Density},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100660888,
  author = {unknown unknown and shinichi kano and 竇春萌 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661649,
  author = {石川昂 and 小路智也 and 角嶋邦之 and 若林整 and 片岡好則 and 西山彰 and 杉井信之 and 筒井一生 and 名取研二 and 岩井洋},
  title = {チャージポンピング法を用いた三次元Si構造の界面準位密度測定},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661653,
  author = {米澤宏昭 and 中島  昭 and 西澤 伸一 and 大橋 弘通 and 筒井一生 and 角嶋邦之 and 若林整 and 岩井洋},
  title = {AlGaN/GaN系pチャンネルHFETの製作},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661655,
  author = {武井優典 and 神谷真行 and 寺山一真 and 米澤宏昭 and 齋藤 渉 and 筒井一生 and 角嶋邦之 and 若林整 and 片岡好則 and 岩井洋},
  title = {AlGaN/GaN系HEMTにおけるコンタクト特性のAlGaN層厚依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661657,
  author = {神谷真行 and 寺山一真 and 武井優典 and 齋藤 渉 and 角嶋邦之 and 若林整 and 片岡好則 and 筒井一生 and 岩井洋},
  title = {AlGaN/GaN HEMTへの凹凸AlGaN層導入による２次元電子ガス濃度分布評価および低抵抗コンタクト形成の可能性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661659,
  author = {大橋匠 and 若林整 and 角嶋邦之 and 杉井信之 and 西山彰 and 片岡好則 and 名取研二 and 筒井一生 and 岩井洋},
  title = {単層MoS2チャネルを用いたn-MOSFETの性能見積もり},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661660,
  author = {松川佳弘 and 岡本真里 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 齋藤渉},
  title = {AlGaN/GaN上のTiC電極の電流電圧特性の熱処理温度依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661663,
  author = {嘉藤貴史 and 稲村太一 and 佐々木 亮人 and 青木 克明 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Fe層とSi層の積層スパッタにより形成されたβ-FeSi2のキャリア密度に関する研究},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661664,
  author = {劉 璞誠 and 米澤宏昭 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {AlGaNのドライエッチングへのBcl3の影響に関する研究},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661665,
  author = {譚錫昊 and 岡本真里 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {AlGaN/GaN上のTiSi2電極によるコンタクトの温度依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661678,
  author = {元木雅章 and 吉原亮 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Pを導入したNiSi2電極を用いたn-Ge基板の電流電圧特性の熱処理依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661680,
  author = {宗清修 and 川那子高暢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {ショットキーゲート材料によるAlGaN/GaNの容量電圧特性への影響},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661681,
  author = {長谷川明紀 and 呉研 and 宋 禛漢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {低バンドギャップ、バンドオフセットを持つ半導体シリサイド/Si接合によるトンネルFET特性向上},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662336,
  author = {中村嘉基 and 細田修平 and Tuokedaerhan Kamale and 角嶋邦之 and 片岡好則 and 西山彰 and 若林整 and 杉井信之 and 筒井一生 and 名取研二 and 岩井洋},
  title = {W2Cゲート電極とLa-silicateゲート絶縁膜を用いたMOSキャパシタの信頼性評価},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662337,
  author = {小路智也 and 石川昂 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {チャージポンピング法を用いた立体Si構造の絶縁膜界面準位の位置推定},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662338,
  author = {岡本真里 and 松川佳弘 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {TiSi2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662339,
  author = {今村浩章 and 稲村太一 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Krガスを用いた積層シリサイド化スパッタプロセスにより形成したNiSi2の薄膜評価},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662340,
  author = {鹿国強 and 大嶺洋 and ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ and 角嶋邦之 and 西山彰 and 杉井信之 and 片岡好則 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {ALD堆積条件によるLa2O３/In0.53Ga0.47Asキャパシタの電気特性への影響},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662341,
  author = {宋 禛漢 and 松本一輝 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Niシリサイドナノワイヤ抵抗率のNi膜厚依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658112,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface properties of La-silicate gate dielectrics on Si(110)surface},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658129,
  author = {unknown unknown and shinichi kano and 竇春萌 and Kuniyuki KAKUSHIMA and Ahmet Parhat and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658130,
  author = {unknown unknown and shinichi kano and 竇春萌 and Kuniyuki KAKUSHIMA and Ahmet Parhat and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658131,
  author = {unknown unknown and shinichi kano and 竇春萌 and Kuniyuki KAKUSHIMA and Ahmet Parhat and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658132,
  author = {unknown unknown and shinichi kano and 竇春萌 and Kuniyuki KAKUSHIMA and Ahmet Parhat and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658134,
  author = {K. Tuokedaerhan and Shuhei Hosoda and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Work Function Extraction of W,Ta and Ti Carbides Formed by Multi Stacked Process},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658307,
  author = {Wei Li and 中島一裕 and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Extraction of Interface State Density of 3-dimensional Si channel},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100830503,
  author = {T. Kamale and R. Tan and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and H. Iwai},
  title = {Interface Properties La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100830496,
  author = {Y. Tanaka and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and S. Yamasaki and H. Iwai},
  title = {TiC Electrode Formed by Multi-Stacking Process for Diamond Contact Metal},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100830548,
  author = {Youhei Miyata and Jun Kanehara and Hiroshi Nohira and Yudai Izumi and Takayuki Muro and Toyohiko Kinoshita and Parhat Ahmet and Kuniyuki Kakushima and Kazuo Tsutsui and Takeo Hattori1 and Hiroshi Iwai},
  title = {Analysis of Chemical Bonding States of Boron Doped in Si Fin Structures: Selective Observation on Top Surfaces and Sidewalls},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100830553,
  author = {S. Kano and C. Dou and M. Hadi and K. Kakushima and P. Ahmet and A. Nishiyama and N. Sugii and K. Tsutsui and Y. Kataoka and K. Natori and E. Miranda and T. Hattori and H. Iwai},
  title = {Influence of Electrode Material for CaOx Based Resistive Switching},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657536,
  author = {大毛利健治 and W. Feng and R. Hettiarachchi and Yeonghun Lee and Soshi Sato and Kuniyuki KAKUSHIMA and M. Sato and K. Fukuda and M. Niwa and K. Yamabe and Kenji Shiraishi and HIROSHI IWAI and Keisaku Yamada},
  title = {Low-frequency noise reduction in Si Nanowire MOSFETs},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657348,
  author = {Kuniyuki KAKUSHIMA and Yuya Suzuki and ダリューシュザデ and Takamasa Kawanago and HIROSHI IWAI},
  title = {Development of Core Technologies for Green Nanoelectronics},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657559,
  author = {櫻井蓉子 and 大毛利健治 and Keisaku Yamada and Kuniyuki KAKUSHIMA and T. Tayagaki and HIROSHI IWAI and Y. Kanemitsu and K. Asakawa and Kenji Shiraishi and S. Nomura},
  title = {Photoluminescence Properties of Si Nanolayers and Si Nanowires},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657561,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {(100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657562,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {(100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657583,
  author = {Kuniyuki KAKUSHIMA and Yuta Tamura and 吉原亮 and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Interface Controlled Stacked Ni Silicidation Process with Schottky Barrier Height Controllability},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657633,
  author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A Proposal of Schottky Barrire Height Tuning Method with Interface Controlled Ni/Si Stacked Silicidation Process},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657638,
  author = {Yuya Suzuki and ダリューシュザデ and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Effect of In0.53Ga0.47AAs surface nitridation on electrical characteristics of high-k/capacitors},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657639,
  author = {吉原亮 and Yuta Tamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Thermally stable NiSi2 for Ge contact with Schottky barrirer height modulation capability},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657642,
  author = {Tohtarhan Kamal and R. Tan and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface Properties of La-silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657950,
  author = {Jiangning Chen and Kana Tsuneishi and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657951,
  author = {Jiangning Chen and Kana Tsuneishi and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100658060,
  author = {Kana Tsuneishi and Jiangning Chen and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Ti silicide electrodes low contact resistance for undoped AlGaN/GaN structure},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100658065,
  author = {E. Mranda and Takamasa Kawanago and Kuniyuki KAKUSHIMA and J. Sune and HIROSHI IWAI},
  title = {Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown},
  booktitle = {[588]	E. Miranda, T. Kawanago, K. Kakushima, J. Sune, H. Iwai, “Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown”,  ESREF2012, October, 2012, Cagliari, Italy},
  year = 2012,
}

@inproceedings{CTT100657252,
  author = {吉原亮 and Yuta Tamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical characterization of atomically flat NiSi2 Schottky diode”, Ni silicidation for Si Fin and nanowire strucures},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657249,
  author = {Kana Tsuneishi and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical properties of Tm2O3 gate dielectric and its scaling issues},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657248,
  author = {Kana Tsuneishi and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical properties of Tm2O3 gate dielectric and its scaling issues},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657247,
  author = {Michihiro Hosoda and Yeonghun Lee and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and HIROSHI IWAI},
  title = {Size-dependent phonon-limited electron mobility in Si Nanowire MOSFETs},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657218,
  author = {Kazuki Matsumoto and 小山将央 and Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Ni silicidation for Si Fin and nanowire strucures},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657217,
  author = {Kazuki Matsumoto and 小山将央 and Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Ni silicidation for Si Fin and nanowire strucures},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657216,
  author = {田中祐樹 and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Y. Tanaka, K. Kakushima, P. Ahmet, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai, “Impact of annealing on structural change in amorphous carbon: effect of Fe catalyst},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657215,
  author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {A novel Ni silicidation technology for Schottky diode formation},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657214,
  author = {shinichi kano and 竇春萌 and unknown unknown and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Impact of metal electrode material on resistive swirching properties of Ce oxides},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657213,
  author = {鈴木 拓也 and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and HIROSHI IWAI and 安田哲二},
  title = {Formation and electrical characterization of MgO - incorporated La2O3 gate insulators by ALD},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657212,
  author = {Ryuji Hosoi and Yuya Suzuki and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657211,
  author = {中島一裕 and Wei Li and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface state density measurements of 3D silicon channel by charge pumping method},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657208,
  author = {Daisuke Kitayama and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Effect of Silicate Formation at Metal Gate/High-k Interface on Electrical Characteristics of La2O3 gated MOS Devices},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657205,
  author = {K. Tuokedaerhan and Tasuku Kaneda and マイマイティ マイマイティレャアティ and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Impact of Annealing Ambient for La2O3/Si Capacitor},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657198,
  author = {Wei Li and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface state density measurements of 3D silicon channel by conductance method},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657197,
  author = {Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {An analytical model of a tunnel FET with Schottky junction},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657196,
  author = {竇春萌 and Soshi Sato and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and HIROSHI IWAI and takeo hattori},
  title = {Si nanowire FET with asymmetric channel},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657195,
  author = {竇春萌 and Soshi Sato and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and HIROSHI IWAI and takeo hattori},
  title = {Si nanowire FET with asymmetric channel},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657193,
  author = {DARYOUSH ZADEH and Ryuji Hosoi and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical Characterization and improvement of high-k/InGaAs devices},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657192,
  author = {Yeonghun Lee and Kuniyuki KAKUSHIMA and Kenji Natori and HIROSHI IWAI},
  title = {Corner Effects on Phonon-Limited Mobility in Rectangular Si Nanowire MOSFETs},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657191,
  author = {Miyuki Kouda and 鈴木 拓也 and Kuniyuki KAKUSHIMA and パールハットアヘメト and HIROSHI IWAI},
  title = {Stack structures of ALD- La2O3 and CVD-CeO2 : fabrication and mobility improvement effects},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657190,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and HIROSHI IWAI and 安田哲二},
  title = {Comparative study of CeO2 gate dielectrics using chemical vapor deposition and atomic layer deposition},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657189,
  author = {unknown unknown and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Influence of Heat Generation within Drain Region on Transport of Hot Electrons},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657188,
  author = {マイマイティ マイマイティレャアティ and 関拓也 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Evaluation of oxide traps in La based oxides for direct high-k/Si capacitor},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657187,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Nitrogen incorporated La-silicate gate dielectric with high scalability},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657186,
  author = {Kuniyuki KAKUSHIMA and Jun Kanehara and takeo hattori and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Boron depth profile of a plasma immersed substrate by XPS analysis},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657357,
  author = {Ryuji Hosoi and Yuya Suzuki and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Characterization of matal Schottky junction for In0.53Ga0.47AAs substrates},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657454,
  author = {Wei Li and 中島一裕 and 竇春萌 and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and 片岡好則 and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Evaluation of Interfacial State Density of MOS Capacitor with Three-Dimensional Channel by Conductance Method},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657534,
  author = {大毛利健治 and W. Feng and R. Hettiarachchi and Yeonghun Lee and Soshi Sato and Kuniyuki KAKUSHIMA and M. Sato and K. Fukuda and M. Niwa and K. Yamabe and Kenji Shiraishi and HIROSHI IWAI and Keisaku Yamada},
  title = {Low-frequency noise reduction in Si Nanowire MOSFETs},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657535,
  author = {大毛利健治 and W. Feng and R. Hettiarachchi and Yeonghun Lee and Soshi Sato and Kuniyuki KAKUSHIMA and M. Sato and K. Fukuda and M. Niwa and K. Yamabe and Kenji Shiraishi and HIROSHI IWAI and Keisaku Yamada},
  title = {Low-frequency noise reduction in Si Nanowire MOSFETs},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657538,
  author = {Miranda Enrique and shinichi kano and 竇春萌 and J. Sune and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {New experimental evidences of conductance quantization in electroformed oxide stacks},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657548,
  author = {Youhei Miyata and Jun Kanehara and Hiroshi Nohira and Y. Izumi and T. Muro and 木下豊彦 and パールハットアヘメト and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and takeo hattori and HIROSHI IWAI},
  title = {Soft X-ray Photoelectron Spectroscopy Study of Boron Doped on Top Surfaces and Sidewalls of Si Fin Structures},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100830546,
  author = {T. Kawanago and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and H. Iwai},
  title = {(100)- and (110)-Oriented nMOSFETs with Highly Scaled EOT in La-Silicate/Si Interface for Multi-Gate Architecture},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100830559,
  author = {Youhei Miyata and Jun Kanehara and Hiroshi Nohira and Yudai Izumi and Takayuki Muro and Toyohiko Kinoshita and Parhat Ahmet and Kuniyuki Kakushima and Kazuo Tsutsui and Takeo Hattori and Hiroshi Iwai},
  title = {Soft X-ray Photoelectron Spectroscopy on Chemical Bonding States of Boron Doped in Si Fin Structures},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100830557,
  author = {K. Kakushima and J. Kanehara and Y. Izumi and T. Muro and T. Kinoshita and P. Ahmet and K. Tsutsui and T. Hattori and H. Iwai},
  title = {Concentration Depth Profiling of Heavily Doped Boron at and near SiO2/Si Interface by Angle-resolved Soft X-ray Photoelectron Spectroscopy},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100830554,
  author = {Jun Kanehara and Youhei Miyata and Hiroshi Nohira and Yudai Izumi and Takayuki Muro and Toyohiko Kinoshita and Parhat Ahmet and Kuniyuki Kakushima and Kazuo Tsutsui and Takeo Hattori and Hiroshi Iwai},
  title = {Chemical Bonding States of As in Si Shallow Junctions Detected by Soft X-ray Photoelectron Spectroscopy and their Profiles},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100615994,
  author = {Yeonghun Lee and Kuniyuki KAKUSHIMA and KENJI NATORI and HIROSHI IWAI},
  title = {Cross-Sectional Distribution of Phonon-Limited Electron Mobility in Rectangular Silicon Nanowire Field Effect Transistors},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622706,
  author = {来山大祐 and 久保田 透 and Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Precise Control of Silicate Reaction with La2O3 Gate Dielectrics towards Equivalent Oxide Thickness of 0.5 nm},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100654916,
  author = {竇春萌 and Soshi Sato and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Si nanowire FET with asymmetric channel},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100654915,
  author = {Y. Wu and Kuniyuki KAKUSHIMA and 大毛利健治 and Akira Nishiyama and HIROSHI IWAI and Keisaku Yamada},
  title = {A Study on Fabrication and Analytic Modeling of novel Schottky contact tunneling Transistors},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100654676,
  author = {櫻井 蓉子 and 大毛利健治 and Keisaku Yamada and Kenji Shiraishi and Kuniyuki KAKUSHIMA and HIROSHI IWAI and S. Nomura},
  title = {Photoluminescence Characterization of the Interface Properties of Si Nanolayers and Nanowires},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100654673,
  author = {Hiroshi Nohira and 小松新 and 山下晃司 and Kuniyuki KAKUSHIMA and HIROSHI IWAI and Y. Hioshi and K. Sawano and Y. Shiraki},
  title = {XPS Study on Chemical Bonding States of high-k/high-μ Gate Stacks for Advanced CMOS},
  booktitle = {ECS Transactions},
  year = 2011,
}

@inproceedings{CTT100654666,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical Properties of Rare-Earth oxides and La2O3 Stacked Gate Dielectrics},
  booktitle = {ECS Transactions},
  year = 2011,
}

@inproceedings{CTT100654662,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical Properties of Rare-Earth oxides and La2O3 Stacked Gate Dielectrics},
  booktitle = {ECS Transactions},
  year = 2011,
}

@inproceedings{CTT100631047,
  author = {小澤健児 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 岩井洋 and ト部友二 and 安田哲二},
  title = {La2O3 のALD成長のための原料選択：シクロペンタジエニル錯体とアミディネート錯体の比較},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100631046,
  author = {佐藤創志 and 角嶋邦之 and パールハットアヘメト and 大毛利健治 and 名取研二 and 山田啓作 and 岩井洋},
  title = {Effects of corners of channel cross-section on electrical performance of silicon nanowire field-effect transistors},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628848,
  author = {細田倫央 and 李映勲 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 岩井洋},
  title = {矩形断面SiナノワイヤMOSFETにおけるフォノン散乱に制限された移動度のサイズ依存性},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628847,
  author = {叶真一 and MokhammadSholihul Hadi and 竇春萌 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {希土類酸化物(CeOX)を用いたMIM構造の抵抗スイッチング特性},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628846,
  author = {大毛利健二 and フェン ウェイ and 佐藤創志 and ヘッティアーラッチ・ランガ and 佐藤 基之 and 松木 武雄 and 角嶋邦之 and 岩井洋 and 山田啓作},
  title = {ドレイン電流のランダムテレグラフノイズに相関したFETチャネルポテンシャル揺らぎの実時間直接観測},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628839,
  author = {フェン ウェイ and ヘッティアーラッチ・ランガ and 佐藤創志 and 角嶋邦之 and M.Niwa and 岩井洋 and 山田啓作 and 大毛利健二},
  title = {Advantages of Silicon Nanowire MOSFETs over Planar MOSFETs Investigated from the Aspect of Drain-Current Noise},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628833,
  author = {LiWei and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {コンダクタンス法による立体チャネルを有するMOSキャパシタの界面準位密度の評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628830,
  author = {吉原 亮 and 角嶋邦之 and パールハットアヘメト and 中塚理 and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Ni/Si積層から形成されるNiシリサイドのショットキーダイオードの電流特性},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628819,
  author = {田村雄太 and 角嶋邦之 and 中塚 理 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {NiとSiの積層薄膜によって形成したシリサイドのシート抵抗に対する熱処理温度の影響},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628814,
  author = {金原潤 and 宮田陽平 and 秋田洸平 and 筒井一生 and 野平博司 and 室隆桂之 and 木下豊彦 and パールハットアヘメト and 角嶋邦之 and 服部健雄 and 岩井洋},
  title = {Si中に極浅ドープされたAsの軟X線光電子分光による化学結合状態の検出とその深さ方向分布},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628219,
  author = {宮田陽平 and 金原潤 and 難波覚 and 三角元力 and 筒井一生 and 野平博司 and 室隆桂之 and 木下豊彦 and 角嶋邦之 and パールハットアヘメト and 服部健雄 and 岩井洋},
  title = {軟X線光電子分光法を用いたFin構造中の不純物化学結合状態分析},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628216,
  author = {角嶋邦之 and 金原潤 and 筒井一生 and 服部健雄 and 岩井洋},
  title = {高濃度ボロンドープ飼料の角度分解X線光電子分光による濃度分布解析},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628215,
  author = {松本一輝 and 小山将央 and 呉研 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {酸化膜被覆型SiナノワイヤおよびSi Fin構造におけるNiシリサイド成長機構の検討},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628214,
  author = {鈴木佑哉 and 細井隆司 and ダリューシュザデ and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {high-k/In0.53Ga0.47As MOS キャパシタの容量-電圧特性の解析},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628213,
  author = {沢尻 侑也 and 山下晃司 and 小松 新 and ダリューシュザデ and 角嶋邦之 and 岩井洋 and 野平博司},
  title = {AR-XPSによる(NH４) ２S処理したIn0.53Ga0.47As表面の化学結合状態の評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628208,
  author = {常石佳奈 and 来山大祐 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {W/Tm2O３/n-Si構造キャパシタの電気特性におけるTm2O３膜厚依存性},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628207,
  author = {Kamale Tuokedaerhan and 金田翼 and マイマイティ マイマイティレャアティ and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {La2O3/n-Si 構造に対するPost Deposition Annealの電気特性への影響},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100627782,
  author = {鈴木 拓也 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 岩井洋 and 安田哲二},
  title = {ALDによるMgO添加La2O3ゲート絶縁膜の形成及び電気特性評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100627781,
  author = {関 拓也 and 来山大祐 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {High-k/Si 直接接合構造における界面準位の定量評価について},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100627777,
  author = {田中 祐樹 and 川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {シリコン基板上に堆積したナノカーボン薄膜への高温短時間アニーリングの影響},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100624047,
  author = {Kenji Ohmori and W. Feng and Soshi Sato and R. Hettiarachchi and M. Sato and T. Matsuki and Kuniyuki KAKUSHIMA and HIROSHI IWAI and Keisaku Yamada},
  title = {Direct Real-Time Observation of Channel Potential Fluctuation, Correlated to Random Telegraph Noise of Drain Current Using Nanowire MOSFETs with Four-Probe Terminals},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100623994,
  author = {C. Dou and 向井 弘樹 and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Resistive switching behaviors of ReRAM having W/CeO2/Si/TiN structure},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100623983,
  author = {Ahmet Parhat and 来山大祐 and 金田翼 and 鈴木 拓也 and Tomotsune Koyanagi and Miyuki Kouda and マイマイティ マイマイティレャアティ and Takamasa Kawanago and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Effects of Metal Layer Insertion on EOT scaling in TiN/Metal/ La2O3 Si High –k Gate Stacks},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100623969,
  author = {Ahmet Parhat and 来山大祐 and 金田翼 and 鈴木 拓也 and Tomotsune Koyanagi and Miyuki Kouda and マイマイティ マイマイティレャアティ and Takamasa Kawanago and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {TiN/W/La2O3 /Si High-k Gate Stack for EOT below o.5nm},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100623967,
  author = {Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and Kenji Ohmori and KENJI NATORI and Keisaku Yamada and HIROSHI IWAI},
  title = {Structural Effects of Channel Cross-section on a Gate Capacitance of Silicon Nanowire Field-Effect Transistors},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100623966,
  author = {W. Feng and R. Hettiarachchi and Soshi Sato and Kuniyuki KAKUSHIMA and M. Niwa and HIROSHI IWAI and Keisaku Yamada and Kenji Ohmori},
  title = {Advantages of Silicon Nanowire MOSFETs over Planar Ones Investigated from the Viewpoints of Static and Noise Properties},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622712,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Metal Inserted Poly-Si Stacks with La2O3 Gate Dielectrics for Scaled EOT and VFB Control by Oxygen Incorporation},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622711,
  author = {Takashi Kanda and ダリューシュザデ and Y. C. Lin and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and E.Y. Chang and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS Capacitors},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622704,
  author = {マイマイティ マイマイティレャアティ and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and HIROSHI IWAI},
  title = {Remote-surface-roughness scattering-limited electron, mobility in ultrathin high-k gate stacked MOSFETs},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622703,
  author = {金田翼 and Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Effect of rare earth oxide capping for La-based gate oxides},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622686,
  author = {Takamasa Kawanago and 鈴木 拓也 and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {An effective process for oxygen defect suppression for La-based oxide gate dielectric},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622685,
  author = {中島一裕 and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Interface State Density Measurement of Three Dimensional Silicon Structures by Charge Pumping Method},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622684,
  author = {小山将央 and Naoto Shigemori and Hideaki Arai and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Lateral encroachment of Ni silicide into silicon nanowire},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622683,
  author = {Naoto Shigemori and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {An effective suppression process for Ni silicide enchroachment into Si nanowire},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622611,
  author = {unknown unknown and Kuniyuki KAKUSHIMA and Ahmet Parhat and KENJI NATORI and HIROSHI IWAI},
  title = {Influence of Phonon Generation of Hot Electrons in Drain Region on Ballistic Transport},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622610,
  author = {Yeonghun Lee and Kuniyuki KAKUSHIMA and KENJI NATORI and HIROSHI IWAI},
  title = {Corner Effects on Phonon-Limited Mobility in Rectangular Si Nanowire MOSFETs},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622609,
  author = {Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and Kenji Ohmori and KENJI NATORI and Keisaku Yamada and HIROSHI IWAI},
  title = {Influence of the cross-sectional shape for Si nanowire FETs},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622608,
  author = {Kiichi Tachi and Kuniyuki KAKUSHIMA and HIROSHI IWAI and S. Cristoloveanu and T. Ernst},
  title = {Characterization of carrier transport in vertically-stacked Si nanowire FETs},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622604,
  author = {HIROSHI IWAI and Kuniyuki KAKUSHIMA and E.Y.Chang and Yueh-Chin Lin},
  title = {III-V MOSFETs for Next Generation – Fabrication of III-V MOS Capacitors},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622598,
  author = {ダリューシュザデ and Takashi Kanda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Effects of In0.53Ga0.47As Surface Preparation on MOS Device Electrical Characterization},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622594,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Preparation and electrical characterization of CeO2 films for gate dielectrics application: comparative study of CVD and ALD processes},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622593,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Rare earth oxide capping effect on La2O3 gate dielectrics toward EOT of 0.5nm},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100617607,
  author = {T. Nakayama and Kuniyuki KAKUSHIMA and O. Nakatsuka and Y. Machida and S. Sotome and T. Matsuki and Kenji Ohmori and HIROSHI IWAI and S. Zaima and 知京豊裕 and Kenji Shiraishi and Keisaku Yamada},
  title = {Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-Devices based on Fundamental Physics of Why Silicides Exist in Nature},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100615536,
  author = {Ahmet Parhat and 来山大祐 and 金田 翼 and 鈴木  拓也 and Tomotsune Koyanagi and Miyuki Kouda and M. Mamatrishat and Takamasa Kawanago and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Scaling of EOT Beyond 0.5nm},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100615527,
  author = {KAZUO TSUTSUI and Masaoki Tanaka and Norifumi Hoshino and Hiroshi Nohira and Kuniyuki KAKUSHIMA and Ahmet Parhat and 佐々木雄一朗 and Bunji Mizuno and T. Muro and T. Kinoshita and takeo hattori and HIROSHI IWAI},
  title = {Soft X-ray Photoelectron Spectroscopy Study of Activation and Deactivation of Impurities in Shallow Junctions},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100615530,
  author = {unknown unknown and Kuniyuki KAKUSHIMA and Ahmet Parhat and M. Geni and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {The Effect of Isotropic and Anisotropic Scattering in Drain Region of Ballistic Channel Diode},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100615539,
  author = {Kenji Ozawa and Miyuki Kouda and Y. Urabe and T. Yasuda and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI},
  title = {La2O3  insulators prepared by ALD using La(iPrCp)3 source: self-limiting growth conditions and electrical properties},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613728,
  author = {M.Bera and Ahmet Parhat and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and Nobuyuki Sugii and 西山彰 and takeo hattori and HIROSHI IWAI},
  title = {Electrical Properties of Yttrium-Titanium Oxide High-k Gate Dielectric on Ge},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613731,
  author = {M. Mamatrishat and Miyuki Kouda and Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and A. Aierken and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and HIROSHI IWAI},
  title = {Effect of Remote-Surface –Roughness Scattering on Electron Mobility in MOSFETs with High-k Dielectrics},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100830564,
  author = {D. Kitayama and T. Koyanagi and K. Kakushima and P. Ahmet and K. Tsutsui and A. Nishiyama and N. Sugii and K. Natori and T. Hattori and H. Iwai},
  title = {TiN Capping Effect on High Temperature Annealed RE-Oxide Devices for Scaled EOT},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613726,
  author = {Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Impact of Alkali-Earth-Elements Incorporation on Vfb R0ll-Off Characteristics of La2O3  Gated MOS Device},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613732,
  author = {Naoto Shigemori and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Suppression of Lateral Encroachment of Ni Silicide into Si Nanowires using Nitrogen Incorporation},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613733,
  author = {来山大祐 and Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {TiN Capping Effect on High Temperature Annealed RE-Oxide MOS Capacitors for Scaled EOT},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613735,
  author = {Y. Wu and Naoto Shigemori and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and 西山彰 and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Observation of Tunneling FET operation in MOSFET with NiSi/Si Schottky source/channel interface},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616048,
  author = {幸田みゆき and 小澤健児 and 角嶋邦之 and パールハットアヘメト and 岩井洋 and ト部 友二 and 安田 哲二},
  title = {CVD法によるCeOx絶縁膜の作製と特性評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613532,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Optimized Oxygen Annealing Process for Vth Tuning of p-MOSFET with High-k/Metal Gate Stacks},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616073,
  author = {山下 晃司 and 角嶋邦之 and 岩井洋},
  title = {HfO2/La2O３/In0.53Ga0.47As構造の熱安定性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616070,
  author = {中島 一裕 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {チャージポンピング法による立体Si構造の界面準位密度の評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616068,
  author = {小山 将央 and 茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 西山彰 and 筒井一生 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {窒素導入によるSiナノワイヤ内へのNiシリサイド侵入抑制機構の検討},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616065,
  author = {李映勲 and 角嶋邦之 and 白石賢二 and 名取研二 and 岩井洋},
  title = {バリスティックナノワイヤトランジスタ性能の太さ依存における状態密度と静電容量のトレードオフ},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616063,
  author = {マイマイティ マイマイティレャアティ and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {High-kゲートスタックMOSFETにおける電子移動度のリモート界面ラフネス散乱依存性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616062,
  author = {鈴木 拓也 and 川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {希釈酸素雰囲気熱処理を用いたLaシリケート/Si MOS構造のVFB/Vthシフトの低EOTへの適用},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616061,
  author = {来山大祐 and 小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {高温短時間熱処理を用いた希土類MOSキャパシタへのTiNキャップ効果},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616060,
  author = {田中正興 and 金原潤 and 宮田陽平 and 角嶋邦之 and パールハットアヘメト and 室隆桂之 and 木下豊彦 and 野平博司 and 筒井一生 and 室田 淳一 and 服部健雄 and 岩井洋},
  title = {Siエピタキシャル層にドープされたボロンの軟X線光電子分光},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616058,
  author = {竇 春萌 and マイマイティ  マイマイティレャアティ and ダリューシュザデ and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {希土類(Ce,Eu)酸化物MIM構造の抵抗スイッチング特性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616055,
  author = {呉研 and 茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {トンネルFET動作に向けたNiシリサイド/Si接触におけるトンネル電流の観測},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616054,
  author = {細井隆司 and 神田高志 and ダリューシュザデ and Yueh Chin Lin and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and Edward Yi Chang and 名取研二 and 服部健雄 and 岩井洋},
  title = {絶縁膜材料を用いたIn0.53Ga0.47As MOSキャパシタの電気特性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616050,
  author = {金田翼 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Tm-oxide/La2O3構造ゲート絶縁膜の界面特性評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616049,
  author = {小澤健児 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 岩井洋 and ト部友二 and 安田哲二},
  title = {La(iPrCp)3 を原料としたLa2O3のALD: Self-limiting 成長条件の明確化},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613533,
  author = {Soshi Sato and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and Kenji Ohmori and KENJI NATORI and Keisaku Yamada and HIROSHI IWAI},
  title = {Gate Semi-Around Si Nanowire FET Fabricated by Conventional CMOS Process with Very High Drivability},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613529,
  author = {角嶋邦之 and 小柳友常 and 来山大祐 and 幸田みゆき and 宋在烈 and 佐藤創志 and 川那子高暢 and M. マイマイティ and 舘喜一 and M.K. Bera and パールハットアヘメト and 野平博司 and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 山田啓作 and 岩井洋},
  title = {LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御},
  booktitle = {，野平博司，筒井一生，西山彰，杉井信之，名取研二，服部健雄，山田啓作，岩井洋“LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御” 応用物理学会分科会 シリコンテクノロジー No.127 pp.4-8（2010年7月22日 ）},
  year = 2010,
}

@inproceedings{CTT100608715,
  author = {佐藤創志 and 角嶋邦之 and パールハットアヘメト and 大毛利健二 and 名取研二 and 岩井洋 and 山田啓作},
  title = {キャリア移動度評価によるシリコンナノワイヤトランジスタの電気特性解析},
  booktitle = {電子情報通信学会技術研究報告 pp.11-16},
  year = 2010,
}

@inproceedings{CTT100608701,
  author = {茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {SiナノワイヤへのNiシリサイド形成と過剰な侵入とその抑制に関する検討},
  booktitle = {電子情報通信学会技術研究報告 pp.17-22},
  year = 2010,
}

@inproceedings{CTT100608700,
  author = {来山大祐 and 小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {EOT=0.5nmに向けた希土類MOSデバイスの高温短時間熱処理の検討},
  booktitle = {電子情報通信学会技術研究報告 pp.43-48},
  year = 2010,
}

@inproceedings{CTT100607843,
  author = {Kuniyuki KAKUSHIMA and Tomotsune Koyanagi and 来山大祐 and Miyuki Kouda and Jaeyeol Song and Takamasa Kawanago and M. Mamatrishat and Kiichi Tachi and M. K. Bera and Ahmet Parhat and Hiroshi Nohira and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and Keisaku Yamada and HIROSHI IWAI},
  title = {Direct Contact of High-k/Si Gate Stack for EOT below 0.7 nm using LaCe-silicate Layer with Vfb controllability},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100605146,
  author = {Ahmet Parhat and Wataru Hosoda and unknown unknown and Yoshihisa Ohishi and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Er Inserted Ni Silicide Metal Source/Drain for Schottky MOSFETs},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100605137,
  author = {KAZUO TSUTSUI and Norifumi Hoshino and Yasumasa Nakagawa and Masaoki Tanaka and Hiroshi Nohira and Kuniyuki KAKUSHIMA and Ahmet Parhat and 佐々木雄一朗 and Bunji Mizuno and takeo hattori and HIROSHI IWAI},
  title = {Depth Profiling of Chemical Bonding States of Impurity Atoms and Their Correlation with Electrical Activity in Si Shallow Junctions},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100604217,
  author = {Ahmet Parhat and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Towards the Ultimate Scaling of MOSFET Gate Dielectrics - Direct Contact of High-k and Silicon-},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100605147,
  author = {Ahmet Parhat and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Towards the Ultimate Scaling of MOSFET Gate Dielectrics - Direct Contact of High-k and Silicon},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100603770,
  author = {佐藤創志 and 新井英朗 and 角嶋邦之 and パールハットアヘメト and 大毛利 健治 and 名取研二 and 岩井洋 and 山田啓作},
  title = {Siナノワイヤトランジスタの電気特性の断面形状依存症},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603765,
  author = {神田高志 and 船水清永 and Yueh Chin Lin and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and Edward Yi Chang and 名取研二 and 服部健雄 and 岩井洋},
  title = {HfO2/ La2O3/ In0.53 Ga0.47As構造の界面特性の変化},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603771,
  author = {李映勲 and 角嶋邦之 and 白石賢二 and 名取研二 and 岩井洋},
  title = {バリスティックSiナノワイヤトランジスタの電気特性の直径依存性},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603768,
  author = {茂森直登 and 新井英朗 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 西山彰 and 筒井一生 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {酸化膜中のSiナノワイヤへのNi拡散の制御},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603767,
  author = {田中正興 and 星野憲文 and 筒井一生 and 野平博司 and 室隆桂之 and 加藤有香子 and 木下豊彦 and パールハットアヘメト and 角嶋邦之 and 服部健雄 and 岩井洋},
  title = {光電子分光により検出したSi中のAsおよびPの化学結合状態の評価},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603766,
  author = {川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {酸素添加がWゲートMOSデバイスの電気特性に与える影響},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603761,
  author = {小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {La2O3 MOSデバイスへのアルカリ土類元素キャップによる電気特性の変化},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603760,
  author = {幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {希土類酸化物をキャップすることによるMOSFETの電気特性の改善},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603759,
  author = {小澤健児 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {La2O3 MOSFETへのCeOxキャップによる電気特性の改善},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603758,
  author = {ダリューシュ ザデ and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {界面にLa2O3 絶縁膜層を挿入したHf系high-kゲートMOSFETの評価},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603756,
  author = {来山 大祐 and 小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {来山大祐，小柳友常，角嶋邦之，パールハット アヘメト，筒井一生，西山彰，杉井信之，名取研二，服部健雄，岩井洋“EOT=0.5nm に向けたTaSi2/La2O3/CeOxゲートスタック構造の検討},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603745,
  author = {AbudukelimuAbudureheman and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and HIROSHI IWAI and takeo hattori and KENJI NATORI},
  title = {Performance of Silicon Ballistic Nanowire MOSFET with Diverse Orientations and Diameters},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100603744,
  author = {Wataru Hosoda and Kenji Ozawa and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Fabrication of SB-MOSFETs on SOI Substrate Using Ni Silicide Containing Er Interlayer},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100603743,
  author = {Katuya Matano and Kiyohisa Funamizu and Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Electrical Characteristics of Rare Earth (La, Ce, Pr and Tm) Oxides/Silicates Gate Dielectric},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630992,
  author = {金田翼 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Effect of Rare Earth Oxide Capping for La-based Gate Oxides},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630955,
  author = {佐藤創志 and 角嶋邦之 and パールハットアヘメト and 大毛利健治 and 山田啓作 and 名取研二 and 岩井洋},
  title = {Influence of the cross-sectional shape for Si nanowire FETs},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630954,
  author = {舘喜一 and 角嶋邦之 and T. Ernst and S. Cristoloveanu and 岩井洋},
  title = {Vertically-Stacked Nanowire Transistors for future CMOS},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630957,
  author = {AbudukelimuAbudureheman and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {The Effect of Scattering in Drain Region of Ballistic Channel Diode},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630995,
  author = {来山大祐 and 小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Process Optimization of Rare-Earth Oxides Gated MOS Devices for Future EOT Scaling},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630993,
  author = {マイマイティ マイマイティレャアティ and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 岩井洋},
  title = {Remote Coulomb and roughness scatterings in gate oxide scaling},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630997,
  author = {久保田透 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Spectroscopic analysis of interface state density in high-k/Si structure},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630958,
  author = {茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 西山彰 and 筒井一生 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Suppression of Lateral Encroachment of Ni Silicide into Si Nanowires using Nitrogen Incorporation},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630960,
  author = {小山将央 and 茂森直登 and 新井英朗 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Lateral encroachment of Ni silicide into Si nanowire},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630961,
  author = {中島一裕 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Interface state density of 3-D structured Si using charge pumping method},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630998,
  author = {幸田みゆき and 小澤健児 and 角嶋邦之 and パールハットアヘメト and 岩井洋 and ト部友二 and 安田哲二},
  title = {Electrical characterization of CVD deposited Ce oxides},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100631000,
  author = {小澤健児 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 岩井洋 and ト部友二 and 安田哲二},
  title = {Self-limited growth of La oxides with ALD},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100631002,
  author = {ダリューシュザデ and 神田高志 and 細井隆司 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Towards High Performance III-V MOSFET, A Study on high-k Gate Stacks on In0.53Ga0.47As},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100631005,
  author = {竇春萌 and 向井弘樹 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Feasibility study of Ce oxide for resistive RAM application},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100631006,
  author = {呉研 and 茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Observation of Tunneling FET operation in MOSFET with NiSi/Si Schottky source/channel interface},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630990,
  author = {川那子高暢 and 鈴木 拓也 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {An Effective Process for Oxygen Defects Suppression for La-based Oxide Gate Dielectric},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630956,
  author = {李映勲 and 角嶋邦之 and 名取研二 and 岩井洋},
  title = {Diameter-dependent injection velocity of ballistic Si nanowire MOSFETs},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630817,
  author = {山下晃司 and 野平博司 and 角嶋邦之 and 岩井洋},
  title = {HfO2/La2O３/In0.53Ga0.47As構造の熱安定性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630991,
  author = {小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Flatband Voltage Shift of La-based Gate Oxides with Alkali-earth-elements Incorporation},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100597770,
  author = {Hiroshi Nohira and Yoichiro Kon and Koji Kitamura and Miyuki Kouda and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Annealing-temperature Dependence of Compositional Depth Profiles and Chemical Bonding States of CeOx / LaOx/Si and LaOx/CeOx /Si Structure},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597769,
  author = {Kiyohisa Funamizu and Y.C. Lin and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and E.Y. Chang and takeo hattori and HIROSHI IWAI},
  title = {Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597766,
  author = {M.K.Bera and Jaeyeol Song and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Electrical Properties of Lanthanum-scandate Gate Dielectric Directly Deposited on Ge},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100598280,
  author = {Yusuke Kobayashi and Kuniyuki KAKUSHIMA and Ahmet Parhat and V.Ramgopal Rao and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Short-channel effects on FinFETs induced by inappropriate fin widths},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100598275,
  author = {Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Influence of Alkali Earth Elements Capping on Electrical Characteristics of La2O3 Gated MOS Device},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100598273,
  author = {Katuya Matano and Kuniyuki KAKUSHIMA and Ahmet Parhat and Nobuyuki Sugii and KAZUO TSUTSUI and takeo hattori and HIROSHI IWAI},
  title = {Threshold Voltage Control in p-MOSFET with High-k Gate dielectric},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100598270,
  author = {Wataru Hosoda and Kenji Ozawa and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {A Study of Schottky Barrier Height Modulation of NiSi by Interlayer Insertion and Its Application to SOI SB-MOSFETs},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597929,
  author = {Kiyohisa Funamizu and Takashi Kanda and Y.C.Lin and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and E.Y.Chang and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597926,
  author = {Hideaki Arai and Hideyuki Kamimura and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and 西山彰 and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Annealing Reaction for Ni Silicidation of Si Nanowire},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597925,
  author = {Hiroto Nakayama and Kuniyuki KAKUSHIMA and Ahmet Parhat and E.Ikenaga and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Crystallographic Orientation Dependent Electrical Characteristics of La2O3 MOS Capacitors},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597923,
  author = {Yeonghun Lee and Kuniyuki KAKUSHIMA and Kenji Shiraishi and KENJI NATORI and HIROSHI IWAI},
  title = {Size-Dependent Transport Characteristics of Ballistic Silicon Nanowire FETs},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597922,
  author = {Miyuki Kouda and Naoto Umezawa and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Ahmet Parhat and Kenji Shiraishi and 知京豊裕 and Keisaku Yamada and HIROSHI IWAI},
  title = {Charged defects reduction in gate insulator with multivalent materials},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597921,
  author = {A.Abudukelimu and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Current-Voltage Characteristics of Ballistic Nanowire MOSFET by Numerical Analysis},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597917,
  author = {M.Mamatrishat and Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Study on Remote Coulomb Scattering Limited Mobility in MOSFETs with CeO2/ La2O3 Gate Stacks},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597913,
  author = {Soshi Sato and Hideaki Arai and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI},
  title = {Evaluation of Channel Potential Profile of Si Nanowire Field Effect Transistor},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597907,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Experimental Investigation of VFB shift and Effective Mobility in La2O3 MOS Devices},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597900,
  author = {Jaeyeol Song and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Effect of Ultrathin Si Passivation Layer for La2O3/Ge MOS structure},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597891,
  author = {M.K. Bera and Jaeyeol Song and Ahmet Parhat and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Rare-earth based mixed oxide as high-k gate dielectrics for Ge MOSFET},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597860,
  author = {Yeonghun Lee and Kuniyuki KAKUSHIMA and Kenji Shiraishi and KENJI NATORI and HIROSHI IWAI},
  title = {Systematic Study on Size Dependences of Transport Parameters for Ballistic Nanowire-FET with Effective Mass Approximation},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597764,
  author = {Tomotsune Koyanagi and Koichi Okamoto and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and AKIRA NISHIYAMA and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Impact of Alkali Earth Elements Incorporation on Electrical Characteristics of La2O3 Gated MOS Device},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597761,
  author = {Hideaki Arai and Hideyuki Kamimura and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Annealing Reaction for Ni Silicidation of Si Nanowire},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597758,
  author = {Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI},
  title = {Overwhelming the o.5 nm EOT Level for CMOS Gate Dielectric},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597775,
  author = {Hiroto Nakayama and Kuniyuki KAKUSHIMA and Ahmet Parhat and E.Ikenaga and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Crystallographic Orientation Dependent Electrical Characteristics of La2O3 MOS Capacitors},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597756,
  author = {Kuniyuki KAKUSHIMA and Koichi Okamoto and Tomotsune Koyanagi and Kiichi Tachi and Miyuki Kouda and Takamasa Kawanago and Jaeyeol Song and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Selection of Rare Earth Silicate with SrO Capping for EOT Scaling below o.5 nm},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597760,
  author = {M.Mamatrishat and Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Analysis of Remote Coulomb Scattering Limited Mobility in MOSFETs with CeO2/La2O3 Gate Stacks},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597754,
  author = {Soshi Sato and Hideyuki Kamimura and Hideaki Arai and Kuniyuki KAKUSHIMA and Ahmet Parhat and Kenji Ohmori and Keisaku Yamada and HIROSHI IWAI},
  title = {High-Performance Si Nanowire FET with a Semi Gate-Around Structure Suitable for Integration},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585316,
  author = {船水清永 and Yueh-Chin Lin and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and Edward Yi Chang and 服部健雄 and 岩井洋},
  title = {High-k ゲート絶縁膜を用いたInxGa1-xAs MOS構造の研究},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100586592,
  author = {Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {High-k expariment below 0.4 nm EOT},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585083,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and Naoto Umezawa and Ahmet Parhat and Kenji Shiraishi and Toyohiro Chikyow and Keisaku Yamada and HIROSHI IWAI},
  title = {Charged defects reduction in gate insulator with multivalent materials},
  booktitle = {2009 Symposium on VLSI Technology Digest of Technical Papers},
  year = 2009,
}

@inproceedings{CTT100586589,
  author = {Takahiro Nagata and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 知京豊裕 and HIROSHI IWAI},
  title = {On the thermal stability of nicket silicides},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100586499,
  author = {Takamasa Kawanago and Jaeyeol Song and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Experimental Study for High Efffective Mobility with directly deposited HfO2/La2O3 MOSFET},
  booktitle = {INFOS2009},
  year = 2009,
}

@inproceedings{CTT100586498,
  author = {Jaeyeol Song and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Post metallization annealing study in La2O3/Ge MOS structure},
  booktitle = {INFOS2009},
  year = 2009,
}

@inproceedings{CTT100585426,
  author = {新井英朗 and 上村英之 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {SiナノワイヤへのNiシリサイド形成の評価},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585291,
  author = {岩井洋 and 山田啓作 and 大毛利健二 and 筒井一生 and 角嶋邦之 and パールハットアヘメト and 佐藤創志 and 上村英之 and 新井英朗},
  title = {トップダウンSiナノワイヤFETの作製法とその電気的特性のサーベイ},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585445,
  author = {小林勇介 and 角嶋邦之 and パールハットアヘメト and V.R. Rao and 筒井一生 and 岩井洋},
  title = {FinFETの構造ばらつきによるオン電流のばらつきの検討},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585430,
  author = {又野克哉 and 川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {Ge層挿入によるLa2O3-MOSキャパシタのVFB制御},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585302,
  author = {岩井洋 and 名取研二 and 白石賢二 and 山田啓作 and 大毛利健二 and 筒井一生 and 角嶋邦之 and パールハットアヘメト},
  title = {シリコンナノワイヤFET研究の現状とロードマップ作成の考え方},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585313,
  author = {幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {CeO2 /La2O3積層ゲート絶縁膜のリーク電流特性の膜厚依存性},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585312,
  author = {細田亘 and 野口浩平 and パールハットアヘメト and 角嶋邦之 and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {異種金属界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用},
  booktitle = {第56回応用物理学会予稿集},
  year = 2009,
}

@inproceedings{CTT100585433,
  author = {中山寛人 and 日野雅文 and 永田晃基 and 小瀬村大亮 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 小椋厚志 and 服部健雄 and 岩井洋},
  title = {As注入とSiN応力膜によるpoly-Siへの歪記憶の検討},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100586581,
  author = {小柳友常 and 岡本晃一 and 角嶋邦之 and パールハットアヘメト and 杉井信之 and 筒井一生 and 服部健雄 and 岩井洋},
  title = {La2O3MOSデバイスへのSrO導入による電気特性の変化},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585442,
  author = {星野憲文 and 中川恭成 and 野平博司 and 室 隆桂之 and 加藤 有香子 and 甲斐隆行 and 金成国 and パールハットアヘメト and 角嶋邦之 and 水野文二 and 木下 豊彦 and 筒井一生 and 服部健雄 and 岩井洋},
  title = {光電子分光によるSi中Asの化学結合状態評価},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585306,
  author = {宋在烈 and 舘喜一 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {極薄Si界面層を挿入したLa2O3/Ge MIS構造における界面準位密度低減に関する検討},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585303,
  author = {野平博司 and 今陽一郎 and 北村幸司 and 幸田みゆき and 角嶋邦之 and 岩井 洋},
  title = {CeO2 /La2O3/Si(100)構造の熱安定性(2)},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100586495,
  author = {Hideyuki Kamimura and Hideaki Arai and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Evaluation of Lateral Ni Diffusion in Si Nanowire Schottky Contact},
  booktitle = {ISTC /CSTIC2009},
  year = 2009,
}

@inproceedings{CTT100586472,
  author = {Hiroki Fujisawa and A Srivastava and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and C.K. Sarkar and HIROSHI IWAI},
  title = {Electrical Characterization of W/HfO2 MOSFETs with La2O3 Incorporation},
  booktitle = {ISTC /CSTIC2009},
  year = 2009,
}

@inproceedings{CTT100585317,
  author = {李映勲 and 永田貴弘 and 角嶋邦之 and 白石賢二 and 名取研二 and 岩井洋},
  title = {引っ張り歪みSiナノワイヤの電子構造とバリスティック伝導},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585423,
  author = {佐藤創志 and 上村英之 and 新井英朗 and 角嶋邦之 and パールハットアヘメト and 大毛利健二 and 筒井一生 and 杉井信之 and 服部健雄 and 山田啓作 and 岩井洋},
  title = {四端子測定TEGを用いたSiナノワイヤトランジスタのチャネル内電位の測定},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585128,
  author = {幸田みゆき and 梅澤直人 and 角嶋邦之 and パールハットアヘメト and 白石賢二 and 知京豊裕 and 山田啓作 and 岩井洋 and 服部健雄},
  title = {低電子揺動Ce酸化物を利用したhigh－k膜中の固定電荷の抑制},
  booktitle = {ゲートスタック研究会－材料･プロセス・評価の物理－（第14回研究会）},
  year = 2009,
}

@inproceedings{CTT100830567,
  author = {H. Nakayama and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and H. Iwai},
  title = {Electrical Characteristics of La2O3 Gated MOS Capacitors with Different Wafer Orientation},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100830633,
  author = {Y. Kobayashi and A. B. Sachid and K. Tsutsui and K. Kakushima and P. Ahmet and V. R. Rao and H. Iwai},
  title = {Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830568,
  author = {Parhat Ahmet and Takashi Shiozawa and Koji Nagahiro and Takahiro Nagata and Kuniyuki Kakushima and Kazuo Tsutsui and Toyohiro Chikyow and Hiroshi Iwai},
  title = {Ni silicidation on Heavily Doped Si Substrates},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830625,
  author = {M. Hino and K. Nagata and T. Yoshida and D. Kosemura and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and A. Ogura and T. Hattori and H. Iwai},
  title = {Study on Stress Memorization by Argon Implantation and Annealing},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830626,
  author = {K. Kakushima and K. Okamoto and K. Tachi and S. Sato and J. Song and T. Kawanago and P. Ahmet and N. Sugii and K. Tsutsui and T. Hattori and H. Iwai},
  title = {Interfacial Dipole Measurement of Dielectric/Silicon Interface by X-ray Photoelectron Spectroscopy},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830627,
  author = {M. Kouda and K. Tachi and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and A. Chandorkar and T. Hattori and H. Iwai},
  title = {Electric Properties of CeOX /La2O3 Stack as Gate Dielectric in Advanced MOSFET Technology},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830628,
  author = {H. Nohira and Y. Takenaga and K. Kakushima and P. Ahmet and K. Tsutsui and H. Iwai},
  title = {Annealing-temperature Dependence of Compositional Depth Profile and Chemical Structures of LaOx/ScOx/Si and ScOx/LaOx/Si Interfacial Transition Layer},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830629,
  author = {K. Okamoto and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and A. Chandorkar and T. Hattori and H. Iwai},
  title = {0.5 nm EOT MOS Structure with TaSix/W Stacked Gate Electrode},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830630,
  author = {K. Noguchi and W. Hosoda and K. Matano and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and A. Chandorkar and T. Hattori and H. Iwai},
  title = {Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100585107,
  author = {中川恭成 and 野平博司 and 酒井一憲 and 横田 知之 and 甲斐 隆行 and 金成国 and パールハットアヘメト and 角嶋邦之 and 水野文二 and 服部健雄 and 筒井一生 and 岩井洋},
  title = {光電子分光によるSi中Asの活性化状態の深さ方向分布評価},
  booktitle = {応用物理学会},
  year = 2008,
}

@inproceedings{CTT100830637,
  author = {K. Kakushima and K. Tachi and M. Adachi and K. Okamoto and S. Sato and J. Song and T. Kawanago and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and H. Iwai},
  title = {Advantage of La2O3 Gate Dielectric Over HfO2 for Direct Contact and Mobility Improvment},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830635,
  author = {K. Tsutsui and M. Watanabe and Y. Nakagawa and T. Matsuda and Y. Yoshida and E. Ikenaga and K. Kakushima and P. Ahmet and H. Nohira and T. Maruizumi and A. Ogura and T. Hattori and H. Iwai},
  title = {New Analysis of Heavily Doped Boron and Arsenic in Shallow Junctions by X-Ray Photoelectron Spectroscopy},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830634,
  author = {Y. Kobayashi and K. Tsutsui and K. Kakushima and P. Ahmet and V. R. Rao and H. Iwai},
  title = {Analysis of Threshold Voltage Variations of FinFETs : Separation of Short Channel Effects and Space Charge Effects},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100585126,
  author = {小林勇介 and 角嶋邦之 and パールハットアヘメト and ラオ ラムゴパル and 筒井一生 and 岩井洋},
  title = {FinFETの閾値変動における短チャネル効果による影響の切り分け},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100585122,
  author = {又野克哉 and 野口 浩平 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {Hf層界面挿入によるNiシリサイドのショットキー障壁変調技術},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100585118,
  author = {細田亘 and 野口浩平 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {Er層界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100585117,
  author = {酒井一憲 and 中川恭成 and 横田知之 and 金成国 and 岡下勝己 and 佐々木雄一朗 and パールハットアヘメト and 角嶋邦之 and 水野文二 and 服部健雄 and 筒井一生 and 岩井洋},
  title = {3次元Fin構造中不純物プロファイリングのための反復犠牲酸化エッチング},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100585114,
  author = {中山寛人 and 日野雅文 and 服部健雄 and 杉井信之 and 筒井一生 and パールハットアヘメト and 角嶋邦之 and 小椋厚志 and 永田 晃基 and 吉田 哲也 and 小瀬村大亮 and 岩井洋},
  title = {Ar注入とSiN応力膜によるパターン付Si基板への歪記憶技術の検討},
  booktitle = {応用物理学会},
  year = 2008,
}

@inproceedings{CTT100585100,
  author = {佐藤創志 and 上村英之 and 新井英朗 and 大毛利健二 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 服部健雄 and 杉井信之 and 山田啓作 and 岩井洋},
  title = {Si Finのアスペクト比最適化により作製した円形Siナノワイヤの形状に関する研究},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100585097,
  author = {野平博司 and 今 陽一郎 and 北村幸司 and 幸田みゆき and 角嶋邦之 and 岩井洋},
  title = {CeO2/La2O3/Si(100)構造の熱安定性},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100585094,
  author = {船水清永 and 幸田みゆき and 舘喜一 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {CeOX/La2O3積層ゲート絶縁膜構造の膜特性評価},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576524,
  author = {川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {La2O3/Si直接接合構造における界面特性の評価},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576519,
  author = {小柳友常 and 岡本晃一 and 角嶋邦之 and パールハットアヘメト and 杉井信之 and 筒井一生 and 服部健雄 and 岩井洋},
  title = {La203系MOSFETへのMg挿入による電気特性の変化},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576517,
  author = {新井英朗 and 上村英之 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 服部健雄 and 杉井信之 and 岩井洋},
  title = {熱酸化によるSi ナノワイヤの作製とその電気特性},
  booktitle = {応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576515,
  author = {李映勲 and 永田 貴弘 and 白石 賢二 and 角嶋邦之 and 岩井洋},
  title = {第一原理計算によるシリコンナノワイヤの電子構造解析},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100830659,
  author = {Yoshisa Ohishi and Kohei Noguchi and Kuniyuki  Kakushima and Parhat Ahmet and Kazuo Tsutsui and Nobuyuki Sugii and Takeo Hattori and Hiroshi Iwai},
  title = {Schottky Barrier Height Modulation of Ni Silicide/Si Contacts by Insertion of Thin Er or Pt Layers},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100607958,
  author = {Naoto Umezawa and Kenji Shiraishi and Kuniyuki KAKUSHIMA and Kenji Ohmori and Keisaku Yamada and 知京豊裕 and HIROSHI IWAI},
  title = {Relation between solubility of silicon in high-k oxides and the effect of Fermi level pinning},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830655,
  author = {K. Kakushima and K. Okamoto and M. Adachi and K. Tachi and S. Sato and T. Kawanago and J. Song and P. Ahmet and N. Sugii and K. Tsutsui and T. Hattori and H. Iwai},
  title = {Impact of Thin La2O3 Insertion for HfO2 MOSFET},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830650,
  author = {K. Tsutsui and T. Shiozawa and K. Nagahiro and Y. Ohishi and K. Kakushima and P. Ahmet and N. Urushihara and M. Suzuki and H. Iwai},
  title = {Effects of B or Al Interface Layers on Thermal Stability of Ni Silicide on Si},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830643,
  author = {Kazuo Tsutsui and Masamitsu Watanabe and Yasumasa Nakagawa and Kazunori Sakai and Takayuki Kai and Cheng-Guo Jin and Yuichiro Sasaki and Kuniyuki Kakushima and Parhat Ahmet and Bunji Mizuno and Takeo Hattori and Hiroshi Iwai.},
  title = {Profiling of Carrier Properties for Shallow Junctions Using a New Sub-nanometer Step-by-step Etching Technique},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100567354,
  author = {舘喜一 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {Sub-1.0nm EOTにおけるW／La2O3ゲートスタックｎMOSFETの電子移動度解析},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100567350,
  author = {パールハット アヘメト and 筒井一生 and 角嶋邦之 and 杉井 信之 and 知京 豊裕 and 服部健雄 and 長田 貴弘 and 岩井洋},
  title = {高濃度n+-Si 及びp+-Si基板上のNiシリサイドの熱安定性の違い},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576383,
  author = {野口浩平 and 大石善久 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {Er層界面挿入によるNiシリサイドのショットキー障壁変調技術},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576388,
  author = {日野雅文 and 吉田哲也 and 小瀬村 大亮 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 小椋 厚志 and 服部健雄 and 岩井洋},
  title = {SiN応力膜によるSi基板への歪記憶の検討},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576381,
  author = {岡本晃一 and 舘喜一 and 足立学 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 杉井信之 and 筒井一生 and 服部健雄 and 岩井洋},
  title = {Hf O2系 High-kゲートMOSFETの電気特性に対するLa2O3界面層挿入効果},
  booktitle = {春季第55回応用物理学会学術講演会 予稿集},
  year = 2008,
}

@inproceedings{CTT100576382,
  author = {幸田みゆき and 舘喜一 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {CeO2/La2O3積層ゲート絶縁膜の電気特性評価},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576428,
  author = {北村 幸司 and 舘喜一 and 角嶋邦之 and 野平 博司 and 岩井洋},
  title = {HfLaOx/SiO2/Siの組成分布に及ぼす熱処理の効果},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576425,
  author = {中野 美尚 and 村上 裕彦 and DARYOUSHHASSANZADEH and パールハットアヘメト and 角嶋邦之 and 岩井洋},
  title = {基板並行方向へのCNT成長制御},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576391,
  author = {上村英之 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 大毛利 健二 and 服部健雄 and 岩井洋},
  title = {熱酸化によるSiナノワイヤ形状の酸化条件依存性},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576432,
  author = {酒井一憲 and 渡邉将光 and 中川恭成 and 金 成国 and 岡下 勝己 and 佐々木雄一朗 and パールハットアヘメト and 角嶋邦之 and 水野 文二 and 服部健雄 and 筒井一生 and 岩井洋},
  title = {極浅接合プロファイリングのための反復犠牲酸化エッチング技術},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576380,
  author = {足立学 and 岡本晃一 and 舘喜一 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {HfO2/ La2O3積層キャパシタにおけるLa2O3層に依存した界面層成長抑制の効果},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576379,
  author = {宋在烈 and 舘喜一 and 岡本晃一 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {Laシリケート層を界面に用いたhigh-k/Si MOS構造の電気特性検討},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576403,
  author = {小林 勇介 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and V.R. Rao and 岩井洋},
  title = {FinFETにおけるショートチャンネル効果のフィン幅依存症},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100830660,
  author = {Kuniyuki Kakushima and Kouichi Okamoto and Manabu Adachi and Kiichi Tachi and Jaeyeol Song and Soushi Sato and Takamasa Kawanago and Parhat Ahmet and Kazuo Tsutsui and Nobuyuki Sugii and Takeo Hattori and Hiroshi Iwai},
  title = {Band Bending Measurement of HfO2/SiO2/Si Capacitor with ultra-thin La2O3 Insertion by XPS},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100544687,
  author = {日野雅文 and 角嶋 邦之 and パールハット アヘメト and 筒井 一生 and 杉井 信之 and 服部 健雄 and 岩井 洋},
  title = {HfO2/ La2O3のゲート絶縁膜を用いたSi-MOSFETの電気特性},
  booktitle = {秋季第68回応用物理学会学術講演会},
  year = 2007,
}

@inproceedings{CTT100544402,
  author = {K.Tachi and K.Kakushima and P.Ahmet and K.Tsutsui and N.Sugii and T.Hattori and H.Iwai},
  title = {Improvement of Interface Properties of W/La2O3/Si MOS Structure Usin AI Capping Layer},
  booktitle = {ECS Transactions},
  year = 2007,
}

@inproceedings{CTT100544684,
  author = {[323]	K.Tsutsui and K.Nagahiro and T.Shiozawa and P.Ahmet and K.Kakushima and H.Iwai},
  title = {Improvement of Thermal Stability of Ni Silcide by Additive Metals with Specific Introduction Processes},
  booktitle = {ECS 212th Meeting},
  year = 2007,
}

@inproceedings{CTT100544403,
  author = {K.Tsutsui and K.Nagahiro and T.Shiozawa and P.Ahmet and K.Kakushima and H.Iwai},
  title = {Improvement of Thermal Stability of Ni Silcide by Additive Metals with Specific Introduction Processes},
  booktitle = {ECS Transactions:ULSI Process Integration 5},
  year = 2007,
}

@inproceedings{CTT100544401,
  author = {M.Adachi and K.Okamoto and K.Kakushima and P.Ahmet and K.Tsutsui and N.Sugii and T.Hattori and H.Iwai},
  title = {Control of Flat Band Voltage by Partial Incorporation of  La2O3  or Sc2O3 into MfO2  in Metal/MfO2/SiO2/Si MOS Capacitors},
  booktitle = {ECS Transactions:Physics and Technology of High-k Gate Dielectrics 5},
  year = 2007,
}

@inproceedings{CTT100544406,
  author = {幸田みゆき and 川那子高暢 and 角嶋邦之 and パールハット・アヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {Sc2O3ゲート絶縁膜のリーク電流機構の解析},
  booktitle = {秋季第68回応用物理学会学術講演会 講演予稿集},
  year = 2007,
}

@inproceedings{CTT100544407,
  author = {上村 英之 and 足立 学 and 角嶋 邦之 and パールハット アヘメト and 筒井 一生 and 杉井 信之 and 服部 健雄 and 岩井 洋},
  title = {HfO2/SiO2 界面へのSc2O3 添加によるフラットバンド電圧シフト},
  booktitle = {秋季第68回応用物理学会学術講演会予稿集},
  year = 2007,
}

@inproceedings{CTT100544405,
  author = {[320]	Koichi Okamoto and Manabu Adachi and Kuniyuki Kakushima and Parhat Ahmet and Nobuyuki Sugii and Kazuo Tsutsui and Takeo Hattori and Hiroshi Iwai},
  title = {Effective Control of Flat-band Voltage in HfO2 Gate Dielectric with La2O3 Incorporation},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100544685,
  author = {宋在烈 and 角嶋邦之 and パールハット・アヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {La2O3/Ge MIS 構造における微量Si 界面層導入による電気特性の変化},
  booktitle = {秋季第68回応用物理学会学術講演会},
  year = 2007,
}

@inproceedings{CTT100544410,
  author = {小林勇介 and 角嶋邦之 and パールハット・アヘメト and V. R. ラオ and 筒井一生 and 岩井洋},
  title = {ダブルゲート型およびプレーナー型MOSFETにおける構造バラつきの影響の比較検討},
  booktitle = {秋季第68回応用物理学会学術講演会予稿集},
  year = 2007,
}

@inproceedings{CTT100544409,
  author = {藤澤 宏樹 and 舘 喜一 and 角嶋 邦之 and パールハット・アヘメト and 筒井 一生 and 杉井 信之 and 服部 健雄 and 岩井 洋},
  title = {Alキャップ層がW/La2O3/Si MOS構造の電気特性に及ぼす影響},
  booktitle = {秋季第68回応用物理学会学術講演会予稿集},
  year = 2007,
}

@inproceedings{CTT100544408,
  author = {岡本晃一 and 足立学 and 角嶋邦之 and パールハット・アヘメト and 杉井信之 and 筒井一生 and 服部健雄 and 岩井洋},
  title = {HfO2/Si 界面へのLa2O3 サブモノレイヤー添加による電気特性の変化},
  booktitle = {秋季第68回応用物理学会学術講演会予稿集},
  year = 2007,
}

@inproceedings{CTT100830663,
  author = {Takashi Shiozawa and Koji Nagahiro and Kazuo Tsutsui and Parhat Ahmet and Kuniyuki Kakushima and Hiroshi Iwai},
  title = {Improvement of Thermal Stability of Ni Silicide by Al Interlayer Deposition},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100599990,
  author = {佐藤創志 and 舘喜一 and 宋在烈 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {ラジカル窒化によるLa<sub>2O</sub>3ゲート絶縁膜への窒素導入効果 : 堆積時窒化によるEOT増加抑制効果（ゲート絶縁膜、容量膜、機能幕及びメモリ技術）},
  booktitle = {電子情報通信学会技術研究報告、SDM、シリコン材料・デバイス},
  year = 2007,
}

@inproceedings{CTT100830662,
  author = {Y. Kobayashi and K. Tsutsui and K. Kakushima and V. Hariharan and V. R. Rao and P. Ahmet and H. Iwai},
  title = {Parasitic Effects Depending on Shape of Spacer Region on FinFETs},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100533619,
  author = {小林勇介 and 筒井一生 and 角嶋邦之 and V. Hariharan and V.R. Rao and パールハットアヘメト and 岩井洋},
  title = {FinFETのSpacer領域形状変化のデバイス特性への影響},
  booktitle = {春季第54回応用物理学会学術講演会予稿集},
  year = 2007,
}

@inproceedings{CTT100830711,
  author = {K. Tachi and H. Iwai and T. Hattori and N. Sugii and K. Tsutsui and P. Ahemt and K. Kakushima},
  title = {Effect of Oxygen for Ultra-Thin La2O3 Film Deposition},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100830713,
  author = {Y. Shiino and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and H. Iwai},
  title = {La2O3 Gate Dielectric Thin Film with Sc2O3 Buffer Layer for High Temperature Annealing},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100830716,
  author = {H. Nohira and T. Matsuda and K. Tachi and Y. Shiino and J. Song and Y. Kuroki and J. Ng and P. Ahmet and K. Kakushima and K. Tsutsui and E. Ikenaga and K. Kobayashi and H. Iwai and T. Hattori},
  title = {Effect of Deposition Temperature on Thermal Stability of Lanthanum Oxide/Si Interfacial Transition Layer},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100830714,
  author = {H. Sauddin and Y. Sasaki and H. Ito and B. Mizuno and P. Ahmet and K. Kakushima and N. Sugii and K. Tsutsui and H. Iwai},
  title = {Leakage Current Characteristics of Ultra-Shallow Junctions formed by B2H6 Plasma Doping},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100830712,
  author = {J. Molina and K. Tachi and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and I. Hiroshi},
  title = {Charge Trapping Characteristics of W-La2O3-nSi Mis Capacitors After Post-Metallization Annealing PMA in N2},
  booktitle = {},
  year = 2006,
}

@misc{CTT100594401,
  author = {Kuniyuki KAKUSHIMA},
  title = {ナノ構造の製作と評価に用いるマイクロマシンツールに関する研究},
  year = 2004,
}

@misc{CTT100710318,
  author = {角嶋邦之 and 川那子高暢 and 宗清修 and LEIYIMING and 古橋　壮之 and 三浦　成久},
  title = {半導体装置及びその製造方法},
  howpublished = {登録特許},
  year = 2018,
  month  = {},
  note   = {特願2014-173714(2014/08/28), 特開2016-048758(2016/04/07), 特許第6270667号(2018/01/12)}
}


@misc{CTT100699741,
  author = {角嶋邦之 and Dou Chunmeng and AHMETPARHAT and 岩井洋 and 片岡　好則},
  title = {抵抗変化型記憶装置},
  howpublished = {登録特許},
  year = 2017,
  month  = {},
  note   = {特願2014-504932(2013/03/12), 再表2013/137262(2015/08/03), 特許第6082383号(2017/01/27)}
}


@misc{CTT100663668,
  author = {AHMETPARHAT and マイマイティ マイマイティレシャティ and 岩井洋 and 服部健雄 and 筒井一生 and 角嶋邦之},
  title = {半導体素子},
  howpublished = {公開特許},
  year = 2013,
  month  = {},
  note   = {特願2011-285538(2011/12/27), 特開2013-135135(2013/07/08)}
}


@misc{CTT100633265,
  author = {角嶋邦之 and 岩井洋 and アヘメト パールハット and 佐藤　創志 and 山田　啓作 and 大毛利　健治},
  title = {ナノワイヤトランジスタ及びその製造方法},
  howpublished = {公開特許},
  year = 2011,
  month  = {},
  note   = {特願2010-079971(2010/03/31), 特開2011-211126(2011/10/20)}
}


@misc{CTT100633283,
  author = {角嶋邦之 and 岩井洋 and アヘメト パールハット and 佐藤　創志 and 山田　啓作 and 大毛利　健治},
  title = {ナノワイヤトランジスタ及びその製造方法},
  howpublished = {公開特許},
  year = 2011,
  month  = {},
  note   = {特願2010-079972(2010/03/31), 特開2011-211127(2011/10/20)}
}


@misc{CTT100572852,
  author = {Parhat　AHMET and 岩井洋 and 筒井一生 and 角嶋邦之 and 服部　健雄 and 知京　豊裕},
  title = {半導体装置及びコンデンサ},
  howpublished = {公開特許},
  year = 2008,
  month  = {},
  note   = {特願2007-056151(2007/03/06), 特開2008-218827(2008/09/18)}
}


@misc{CTT100572876,
  author = {岩井洋 and 筒井一生 and Parhat　AHMET and 角嶋邦之 and 松元　道一 and 奥野　泰利 and 久保田　正文 and 上田　誠二},
  title = {半導体装置及びその製造方法},
  howpublished = {公開特許},
  year = 2007,
  month  = {},
  note   = {特願2006-149763(2006/05/30), 特開2007-324187(2007/12/13)}
}




@phdthesis{CTT100594401,
  author = {Kuniyuki KAKUSHIMA},
  title = {ナノ構造の製作と評価に用いるマイクロマシンツールに関する研究},
  school = {東京大学},
  year = 2004,
}