@article{CTT100830585,
  author = {"Chunmeng Dou" and "Tomoya Shoji" and "Kazuhiro Nakajima" and "Kuniyuki Kakushima" and "Parhat Ahmet" and "Yoshinori Kataoka" and "Akira Nishiyama" and "Nobuyuki Sugii" and "Hitoshi Wakabayashi" and "Kazuo Tsutsui" and "Kenji Natori" and "Hiroshi Iwai"},
  title = {Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement},
  journal = {Microelectronics Reliability},
  year = 2014,
}

@article{CTT100830612,
  author = {"K. Tuokedaerhan" and "R. Tan and K. Kakushima" and "P. Ahmet" and "Y. Kataoka" and "A. Nishiyama" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "K. Natori" and "T. Hattori" and "H. Iwai"},
  title = {Stacked sputtering process for Ti, Ta, and W carbide formation for gate metal application},
  journal = {Applied Physics Letters (APL)},
  year = 2013,
}

@article{CTT100560055,
  author = {KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and PARHAT AHMET and HIROSHI IWAI},
  title = {Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi2},
  journal = {Microelectronic Engineering},
  year = 2008,
}

@article{CTT100544681,
  author = {Yusuke Kobayashi and C. Raghunathan Manoj and Kazuo Tsutsui and Venkanarayan Hariharan and Kuniyuki Kakushima and V.Ramgopal Rao and Parhat Ahmet and Hiroshi Iwai},
  title = {Parasitic Effects in Multi-Gate MOSFETs},
  journal = {IEICE TRANS. ELECTRON},
  year = 2007,
}

@inproceedings{CTT100830490,
  author = {T. Seki and T. Kawanago and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and H. Iwai},
  title = {Electrical and Infrared Absorption Studies on La-silicate/Si Interface},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100830503,
  author = {T. Kamale and R. Tan and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and H. Iwai},
  title = {Interface Properties La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100830496,
  author = {Y. Tanaka and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and S. Yamasaki and H. Iwai},
  title = {TiC Electrode Formed by Multi-Stacking Process for Diamond Contact Metal},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100830548,
  author = {Youhei Miyata and Jun Kanehara and Hiroshi Nohira and Yudai Izumi and Takayuki Muro and Toyohiko Kinoshita and Parhat Ahmet and Kuniyuki Kakushima and Kazuo Tsutsui and Takeo Hattori1 and Hiroshi Iwai},
  title = {Analysis of Chemical Bonding States of Boron Doped in Si Fin Structures: Selective Observation on Top Surfaces and Sidewalls},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100830553,
  author = {S. Kano and C. Dou and M. Hadi and K. Kakushima and P. Ahmet and A. Nishiyama and N. Sugii and K. Tsutsui and Y. Kataoka and K. Natori and E. Miranda and T. Hattori and H. Iwai},
  title = {Influence of Electrode Material for CaOx Based Resistive Switching},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100830546,
  author = {T. Kawanago and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and H. Iwai},
  title = {(100)- and (110)-Oriented nMOSFETs with Highly Scaled EOT in La-Silicate/Si Interface for Multi-Gate Architecture},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100830554,
  author = {Jun Kanehara and Youhei Miyata and Hiroshi Nohira and Yudai Izumi and Takayuki Muro and Toyohiko Kinoshita and Parhat Ahmet and Kuniyuki Kakushima and Kazuo Tsutsui and Takeo Hattori and Hiroshi Iwai},
  title = {Chemical Bonding States of As in Si Shallow Junctions Detected by Soft X-ray Photoelectron Spectroscopy and their Profiles},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100830557,
  author = {K. Kakushima and J. Kanehara and Y. Izumi and T. Muro and T. Kinoshita and P. Ahmet and K. Tsutsui and T. Hattori and H. Iwai},
  title = {Concentration Depth Profiling of Heavily Doped Boron at and near SiO2/Si Interface by Angle-resolved Soft X-ray Photoelectron Spectroscopy},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100830559,
  author = {Youhei Miyata and Jun Kanehara and Hiroshi Nohira and Yudai Izumi and Takayuki Muro and Toyohiko Kinoshita and Parhat Ahmet and Kuniyuki Kakushima and Kazuo Tsutsui and Takeo Hattori and Hiroshi Iwai},
  title = {Soft X-ray Photoelectron Spectroscopy on Chemical Bonding States of Boron Doped in Si Fin Structures},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100830564,
  author = {D. Kitayama and T. Koyanagi and K. Kakushima and P. Ahmet and K. Tsutsui and A. Nishiyama and N. Sugii and K. Natori and T. Hattori and H. Iwai},
  title = {TiN Capping Effect on High Temperature Annealed RE-Oxide Devices for Scaled EOT},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100830567,
  author = {H. Nakayama and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and H. Iwai},
  title = {Electrical Characteristics of La2O3 Gated MOS Capacitors with Different Wafer Orientation},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100830627,
  author = {M. Kouda and K. Tachi and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and A. Chandorkar and T. Hattori and H. Iwai},
  title = {Electric Properties of CeOX /La2O3 Stack as Gate Dielectric in Advanced MOSFET Technology},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830628,
  author = {H. Nohira and Y. Takenaga and K. Kakushima and P. Ahmet and K. Tsutsui and H. Iwai},
  title = {Annealing-temperature Dependence of Compositional Depth Profile and Chemical Structures of LaOx/ScOx/Si and ScOx/LaOx/Si Interfacial Transition Layer},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830629,
  author = {K. Okamoto and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and A. Chandorkar and T. Hattori and H. Iwai},
  title = {0.5 nm EOT MOS Structure with TaSix/W Stacked Gate Electrode},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830633,
  author = {Y. Kobayashi and A. B. Sachid and K. Tsutsui and K. Kakushima and P. Ahmet and V. R. Rao and H. Iwai},
  title = {Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830625,
  author = {M. Hino and K. Nagata and T. Yoshida and D. Kosemura and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and A. Ogura and T. Hattori and H. Iwai},
  title = {Study on Stress Memorization by Argon Implantation and Annealing},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830568,
  author = {Parhat Ahmet and Takashi Shiozawa and Koji Nagahiro and Takahiro Nagata and Kuniyuki Kakushima and Kazuo Tsutsui and Toyohiro Chikyow and Hiroshi Iwai},
  title = {Ni silicidation on Heavily Doped Si Substrates},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830630,
  author = {K. Noguchi and W. Hosoda and K. Matano and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and A. Chandorkar and T. Hattori and H. Iwai},
  title = {Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830626,
  author = {K. Kakushima and K. Okamoto and K. Tachi and S. Sato and J. Song and T. Kawanago and P. Ahmet and N. Sugii and K. Tsutsui and T. Hattori and H. Iwai},
  title = {Interfacial Dipole Measurement of Dielectric/Silicon Interface by X-ray Photoelectron Spectroscopy},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830635,
  author = {K. Tsutsui and M. Watanabe and Y. Nakagawa and T. Matsuda and Y. Yoshida and E. Ikenaga and K. Kakushima and P. Ahmet and H. Nohira and T. Maruizumi and A. Ogura and T. Hattori and H. Iwai},
  title = {New Analysis of Heavily Doped Boron and Arsenic in Shallow Junctions by X-Ray Photoelectron Spectroscopy},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830634,
  author = {Y. Kobayashi and K. Tsutsui and K. Kakushima and P. Ahmet and V. R. Rao and H. Iwai},
  title = {Analysis of Threshold Voltage Variations of FinFETs : Separation of Short Channel Effects and Space Charge Effects},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830637,
  author = {K. Kakushima and K. Tachi and M. Adachi and K. Okamoto and S. Sato and J. Song and T. Kawanago and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and H. Iwai},
  title = {Advantage of La2O3 Gate Dielectric Over HfO2 for Direct Contact and Mobility Improvment},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830659,
  author = {Yoshisa Ohishi and Kohei Noguchi and Kuniyuki  Kakushima and Parhat Ahmet and Kazuo Tsutsui and Nobuyuki Sugii and Takeo Hattori and Hiroshi Iwai},
  title = {Schottky Barrier Height Modulation of Ni Silicide/Si Contacts by Insertion of Thin Er or Pt Layers},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830655,
  author = {K. Kakushima and K. Okamoto and M. Adachi and K. Tachi and S. Sato and T. Kawanago and J. Song and P. Ahmet and N. Sugii and K. Tsutsui and T. Hattori and H. Iwai},
  title = {Impact of Thin La2O3 Insertion for HfO2 MOSFET},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830650,
  author = {K. Tsutsui and T. Shiozawa and K. Nagahiro and Y. Ohishi and K. Kakushima and P. Ahmet and N. Urushihara and M. Suzuki and H. Iwai},
  title = {Effects of B or Al Interface Layers on Thermal Stability of Ni Silicide on Si},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830643,
  author = {Kazuo Tsutsui and Masamitsu Watanabe and Yasumasa Nakagawa and Kazunori Sakai and Takayuki Kai and Cheng-Guo Jin and Yuichiro Sasaki and Kuniyuki Kakushima and Parhat Ahmet and Bunji Mizuno and Takeo Hattori and Hiroshi Iwai.},
  title = {Profiling of Carrier Properties for Shallow Junctions Using a New Sub-nanometer Step-by-step Etching Technique},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830660,
  author = {Kuniyuki Kakushima and Kouichi Okamoto and Manabu Adachi and Kiichi Tachi and Jaeyeol Song and Soushi Sato and Takamasa Kawanago and Parhat Ahmet and Kazuo Tsutsui and Nobuyuki Sugii and Takeo Hattori and Hiroshi Iwai},
  title = {Band Bending Measurement of HfO2/SiO2/Si Capacitor with ultra-thin La2O3 Insertion by XPS},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100544401,
  author = {M.Adachi and K.Okamoto and K.Kakushima and P.Ahmet and K.Tsutsui and N.Sugii and T.Hattori and H.Iwai},
  title = {Control of Flat Band Voltage by Partial Incorporation of  La2O3  or Sc2O3 into MfO2  in Metal/MfO2/SiO2/Si MOS Capacitors},
  booktitle = {ECS Transactions:Physics and Technology of High-k Gate Dielectrics 5},
  year = 2007,
}

@inproceedings{CTT100544402,
  author = {K.Tachi and K.Kakushima and P.Ahmet and K.Tsutsui and N.Sugii and T.Hattori and H.Iwai},
  title = {Improvement of Interface Properties of W/La2O3/Si MOS Structure Usin AI Capping Layer},
  booktitle = {ECS Transactions},
  year = 2007,
}

@inproceedings{CTT100544403,
  author = {K.Tsutsui and K.Nagahiro and T.Shiozawa and P.Ahmet and K.Kakushima and H.Iwai},
  title = {Improvement of Thermal Stability of Ni Silcide by Additive Metals with Specific Introduction Processes},
  booktitle = {ECS Transactions:ULSI Process Integration 5},
  year = 2007,
}

@inproceedings{CTT100544684,
  author = {[323]	K.Tsutsui and K.Nagahiro and T.Shiozawa and P.Ahmet and K.Kakushima and H.Iwai},
  title = {Improvement of Thermal Stability of Ni Silcide by Additive Metals with Specific Introduction Processes},
  booktitle = {ECS 212th Meeting},
  year = 2007,
}

@inproceedings{CTT100544405,
  author = {[320]	Koichi Okamoto and Manabu Adachi and Kuniyuki Kakushima and Parhat Ahmet and Nobuyuki Sugii and Kazuo Tsutsui and Takeo Hattori and Hiroshi Iwai},
  title = {Effective Control of Flat-band Voltage in HfO2 Gate Dielectric with La2O3 Incorporation},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100830662,
  author = {Y. Kobayashi and K. Tsutsui and K. Kakushima and V. Hariharan and V. R. Rao and P. Ahmet and H. Iwai},
  title = {Parasitic Effects Depending on Shape of Spacer Region on FinFETs},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100830663,
  author = {Takashi Shiozawa and Koji Nagahiro and Kazuo Tsutsui and Parhat Ahmet and Kuniyuki Kakushima and Hiroshi Iwai},
  title = {Improvement of Thermal Stability of Ni Silicide by Al Interlayer Deposition},
  booktitle = {},
  year = 2007,
}

@misc{CTT100699741,
  author = {角嶋邦之 and Dou Chunmeng and AHMETPARHAT and 岩井洋 and 片岡　好則},
  title = {抵抗変化型記憶装置},
  howpublished = {登録特許},
  year = 2017,
  month  = {},
  note   = {特願2014-504932(2013/03/12), 再表2013/137262(2015/08/03), 特許第6082383号(2017/01/27)}
}


@misc{CTT100663668,
  author = {AHMETPARHAT and マイマイティ マイマイティレシャティ and 岩井洋 and 服部健雄 and 筒井一生 and 角嶋邦之},
  title = {半導体素子},
  howpublished = {公開特許},
  year = 2013,
  month  = {},
  note   = {特願2011-285538(2011/12/27), 特開2013-135135(2013/07/08)}
}