@book{CTT100711251,
  author = {Shunri Oda and David K. Ferry},
  title = {Nanoscale Silicon Devices},
  publisher = {},
  year = 2016,
}

@book{CTT100721792,
  author = {T. Kodera and S. Oda},
  title = {Coupled Si quantum dots for spin-based qubits},
  publisher = {CRC press},
  year = 2015,
}

@book{CTT100657027,
  author = {小田俊理},
  title = {VLS Geナノワイヤ成長},
  publisher = {},
  year = 2013,
}

@book{CTT100654968,
  author = {Chuanbo Li and Hiroshi Mizuta and Shunri Oda},
  title = {Chapter 22. Growth and Characterisation of Ge Nanowires by Chemical Vapour Deposition},
  publisher = {},
  year = 2011,
}

@book{CTT100619839,
  author = {小田俊理},
  title = {Si量子ドットを用いた単電子トランジスタの研究},
  publisher = {エヌ・ティー・エス},
  year = 2011,
}

@book{CTT100653697,
  author = {小寺哲夫 and 小田俊理},
  title = {トップゲートとサイドゲートによるシリコン結合量子ドットの静電結合制御},
  publisher = {株式会社エヌ・ティー・エス},
  year = 2011,
}

@book{CTT100619838,
  author = {小田俊理},
  title = {メモリデバイス},
  publisher = {オーム社},
  year = 2011,
}

@book{CTT100619862,
  author = {M. Winterer and W. Gladfelter and D. Gamelin and S. Oda},
  title = {Photovoltaics and Optoelectronics from Nanoparticles},
  publisher = {},
  year = 2010,
}

@book{CTT100598617,
  author = {小田俊理},
  title = {プラズマ技術によるナノシリコンドットの作製},
  publisher = {シーエムシー出版},
  year = 2010,
}

@book{CTT100598591,
  author = {S. Oda and S-Y Huang},
  title = {Silicon Nanocrystal Flash Memory},
  publisher = {},
  year = 2010,
}

@book{CTT100585369,
  author = {小田俊理},
  title = {量子化構造とデバイス},
  publisher = {},
  year = 2009,
}

@book{CTT100623977,
  author = {SHUNRI ODA and H. Mizuta and S. Uno and N. Mori and S. Oda and N. Koshida},
  title = {Electron transport in nanocrystalline silicon},
  publisher = {Springer},
  year = 2008,
}

@book{CTT100591347,
  author = {森泉豊栄 and 小田俊理 and 山本寛 and 川名明夫 編 and 岩本光正},
  title = {電子物性・材料の事典},
  publisher = {朝倉書店},
  year = 2006,
}

@book{CTT100406925,
  author = {H. Mizuta and S. Uno and N. Mori and S. Oda and N. Koshida},
  title = {Electron transport in nanocrystalline silicon},
  publisher = {Springer},
  year = 2006,
}

@book{CTT100528186,
  author = {S-Y. Huang and H. Mizuta and S. Oda},
  title = {Nanocrystalline Silicon Memory Devices},
  publisher = {Handbook of Semiconductor Nanostructures and Nanodevices Edited by A. A. Balandin and K. L. Wang, American Scientific Publishers},
  year = 2006,
}

@book{CTT100528182,
  author = {H. Mizuta and S. Uno and N. Mori and S. Oda and N. Koshida},
  title = {Electron transport in nanocrystalline silicon},
  publisher = {Springer},
  year = 2006,
}

@book{CTT100540694,
  author = {S. Oda and D. Ferry},
  title = {Silicon Nanoelectronics},
  publisher = {ISBN 0824726332, CRC Press},
  year = 2005,
}

@book{CTT100540693,
  author = {S. Oda and D.F. Moore},
  title = {Future Integrated Systems},
  publisher = {ISBN 0 9535142 1 8, MTP, Cambridge},
  year = 2005,
}

@book{CTT100393766,
  author = {S-Y. Huang and H. Mizuta and S. Oda},
  title = {Nanocrystalline Silicon Memory Devices},
  publisher = {Handbook of Semiconductor Nanostructures and Nanodevices, Edited by A.A. Balandin and K.L. Wang, American Scientific Publishers, Los Angeles (2005)},
  year = 2005,
}

@book{CTT100386164,
  author = {小田俊理 and 土屋良重},
  title = {表面加工(化学便覧　基礎編)},
  publisher = {日本化学会編、丸善},
  year = 2004,
}

@book{CTT100494710,
  author = {Shunri Oda},
  title = {MOCVD for Thin Film Growth},
  publisher = {Vortex Electronics and SQUIDs, (Springer-Verlag)},
  year = 2003,
}

@book{CTT100454941,
  author = {小田俊理},
  title = {量子構造と界面},
  publisher = {界面ハンドブック(N.T.S.)},
  year = 2001,
}

@book{CTT100454940,
  author = {K. Nishiguchi and X. Zhao and S. Oda},
  title = {Fabrication and characterization of nanocrystalline silicon electron emitter},
  publisher = {Proceedings of the 25th International Conference on the Physics of Semiconductors, Eds by N. Miura and T. Ando (Springer, Berlin, 2001)},
  year = 2001,
}

@book{CTT100454939,
  author = {K. Nishiguchi and S. Oda},
  title = {Ballistic transport under magnetic field in silicon vertical transistors},
  publisher = {Proceedings of the 25th International Conference on the Physics of Semiconductors, Eds by N. Miura and T. Ando (Springer, Berlin, 2001)},
  year = 2001,
}

@book{CTT100454938,
  author = {SHUNRI ODA},
  title = {Electron transport in silicon nanodevices},
  publisher = {APPC 2000, Eds by Y. D. Yao et al (World Scientific, Singapore, 2001)},
  year = 2001,
}

@book{CTT100423310,
  author = {S.ODA and S.YAMAMOTO and Z.WANG and H.TOBISAKA and K.NAGATA},
  title = {Atomic Layer MOCVD of Oxide Superconductors and Dielectrics},
  publisher = {High-Temperature Superconductors and Novel Inorganic Materials,NATO Science Series (Eds. by Van Tendeloo et al., Kluwer Academic Publishers)},
  year = 1999,
}

@book{CTT100452632,
  author = {S. Yamamoto and A. Kawaguchi and S. Oda},
  title = {Critical Current Density of YBCO Ultra Thin Films Prepared by atomic Layer MOCVD},
  publisher = {Advances in Superconductivity VII},
  year = 1995,
}

@book{CTT100452619,
  author = {H. Zama and S. Oda and J. Saga and T. Hattori},
  title = {Low Temperature Chemical Vapor Deposition of RBa┣D22┫D2Cu┣D23┫D2Ox (R┣D22┫D2Y, Pr) Ultra Thin Films},
  publisher = {Advances in Superconductivity  VI, (Springer-Verlag, Tokyo)},
  year = 1994,
}

@book{CTT100452623,
  author = {S. Oda and M.Otobe},
  title = {Preparation of Nanocrystalline Silicon by Digital Chemical Vapor Deposition},
  publisher = {Springer-Verlag Nanostructures and Quantum Effects},
  year = 1994,
}

@book{CTT100452616,
  author = {K. Sakai and H. Zama and S. Oda},
  title = {In Situ Optical Diagnostics for Layer-by-Layer CVD of YBaCuO Films},
  publisher = {Advances in Superconductivity V, Edited by Y. Bando and H. Yamauchi,  (Springer-Verlag, Tokyo)},
  year = 1993,
}

@book{CTT100452611,
  author = {S. Oda},
  title = {Low-Temperature Growth of YBaCuO Films by Chemical Vapor Deposition},
  publisher = {High Temperature Superconducting Electronics, Edited by K. Hara, (Ohmsha, Tokyo)},
  year = 1993,
}

@book{CTT100452617,
  author = {S. Oda and K.Sakai and H.Zama},
  title = {In-Situ Optical Monitoring of Crystal Growth in Layer-by Layer Chemical Vapor Deposition of YBa┣D22┫D2Cu┣D23┫D2Ox},
  publisher = {Proc. 6┣D1th┫D1 Topical Meeting on Crystal Growth Mechanism},
  year = 1993,
}

@book{CTT100431533,
  author = {K. Sakai and H. Zama and S. Oda},
  title = {(In Situ Optical Diagnostics for Layer-by-Layer CVD of YBaCuO Films)},
  publisher = {Advances in Superconductivity V, Edited by Y. Bando and H. Yamauchi,  (Springer-Verlag, Tokyo)},
  year = 1993,
}

@book{CTT100431530,
  author = {M. Otobe and S. Oda},
  title = {(Separation of Nucleation and Growth Processes of Nanocrystalline Silicon by Hydrogen Radical Treatment of Hydrogenated Amorphous Silicon)},
  publisher = {Mat Res Soc Symp Proc},
  year = 1993,
}

@book{CTT100452605,
  author = {H. Zama and R. Anzai and S. Oda and k. Hiroumi and K. Saito and T. Hattori},
  title = {(The Relation Between Deposition Temperature, Superconductivity and Surface Morphology on CVD Process)},
  publisher = {Advances in Superconductivity V, Edited by Y. Bando and H. Yamauchi,  (Springer-Verlag, Tokyo)},
  year = 1993,
}

@book{CTT100452614,
  author = {M. Otobe and S. Oda},
  title = {Crystallization Mechanism of Nanocrystalline Silicon Fabricated by Hydrogen Radical Annealing},
  publisher = {Solid State Devices and Materials Conference, Extended Abstracts},
  year = 1992,
}

@book{CTT100452615,
  author = {H. Zama and K. Sakai and S. Oda},
  title = {In-situ Optical Monitoring of Oxide Superconductor Growth for Layer-by-Layer Chemical Vapor Deposition},
  publisher = {Solid State Devices and Materials Conference, Extended Abstracts},
  year = 1992,
}

@book{CTT100452613,
  author = {M. Otobe and S. Oda},
  title = {The Role of Hydrogen Radicals in the Nanocrystallization of Silicon},
  publisher = {Proc. Jpn. Symp. Plasma Chem.},
  year = 1992,
}

@book{CTT100452612,
  author = {S. Oda},
  title = {Frequency effects in processing plasmas-Experimental-},
  publisher = {Proc. Jpn. Symp. Plasma Chem.},
  year = 1992,
}

@article{CTT100741718,
  author = {小田俊理 (訳) and 小田俊理},
  title = {ナノ結晶だけからなるトランジスターの製法},
  journal = {パリティ},
  year = 2017,
}

@article{CTT100741717,
  author = {Takamasa Kawanago and Shunri Oda},
  title = {Control of threshold voltage by gate metal electrode in molybdenum disulfide fieldeffect},
  journal = {Applied Physics Letters},
  year = 2017,
}

@article{CTT100735764,
  author = {J. O. Tenorio-Pearl and E. D. Herbschleb and S. Fleming and C. Creatore and S. Oda and W. I. Milne and A. W. Chin},
  title = {Observation and coherent control of interface-induced electronic resonances in a field-effect transistor},
  journal = {Nature Materials},
  year = 2017,
}

@article{CTT100734151,
  author = {J. O. Tenorio-Pearl and E. D. Herbschleb and S. Fleming and C. Creatore and S. Oda and W. I. Milne and A. W. Chin},
  title = {Observation and coherent control of interface-induced electronic resonances in a field-effect transistor},
  journal = {Nature Materials},
  year = 2016,
}

@article{CTT100722660,
  author = {Y. Yamaoka and Shunri. Oda and T. Kodera},
  title = {Electron transport in physically-defined double quantum dots on a highly doped silicon-on-insulator substrate},
  journal = {Appl. Phys. Lett.},
  year = 2016,
}

@article{CTT100710680,
  author = {Zhengyu Xu and Koichi Usami and Marolop Simanullang and Tomohiro Noguchi and Yukio Kawano and Shunri Oda},
  title = {Effect of gold migration on the morphology of germanium nanowires grown by a two-step growth method with temperature modulation},
  journal = {},
  year = 2016,
}

@article{CTT100711247,
  author = {Zhengyu Xu and kouichi usami and Tomohiro Noguchi and Yukio Kawano and Teruyuki Ohashi and Takahisa Tanaka and Tsunaki Takahashi and Shunri Oda and Ken Uchida},
  title = {Experimental Study on Deformation Potential (<i>D<sub>ac</sub></i>) in MOSFETs: Demonstration of Increased <i>D<sub>ac</sub></i> at MOS Interfaces and Its Impact on Electron Mobility},
  journal = {IEEE Journal of the Electron},
  year = 2016,
}

@article{CTT100711248,
  author = {Tomohiro Noguchi and Marolop Simanullang and Zhengyu Xu and Koichi Usami and Tetsuo Kodera and Shunri Oda},
  title = {Synthesis of Ge/Si core/shell nanowires with suppression of branch formation},
  journal = {Applied Physics Express},
  year = 2016,
}

@article{CTT100704494,
  author = {Marolop Simanullang and Gde Bimananda Mahardika Wisna and Koichi Usami and Wei Cao and Yukio Kawano and Kaustav Banerjee and Shunri Oda},
  title = {Undoped and catalyst-free germanium nanowires for high-performance p-type enhancement-mode field-effect transistors},
  journal = {Journal of Materials Chemistry C},
  year = 2016,
}

@article{CTT100711249,
  author = {Takamasa Kawanago and Shunri Oda},
  title = {Utilizing self-assembled-monolayer-based gate dielectrics to fabricate molybdenum disulfide field-effect transistors},
  journal = {Applied Physics Letters},
  year = 2016,
}

@article{CTT100711250,
  author = {Takahisa Tanaka and Yuya Kurosawa and Naotoshi Kadotani and Tsunaki Takahashi and Shunri Oda and Ken Uchida},
  title = {Deionization of Dopants in Silicon Nanofilms Even with Donor Concentration of Greater than 1019 cm–3},
  journal = {Nano Letters},
  year = 2016,
}

@article{CTT100700939,
  author = {Takamasa Kawanago and Shunri Oda},
  title = {Utilizing self-assembled-monolayer-based gate dielectrics to fabricate molybdenum},
  journal = {Applied Physics Letters},
  year = 2016,
}

@article{CTT100734154,
  author = {Jie Yu (于杰)1 and Kun-ji Chen (陈坤基)1 and 3 and Zhong-yuan Ma (马忠元)1 and Xin-xin Zhang (张鑫鑫)1 and Xiao-fan Jiang (江小帆)1 and Yang-qing Wu (吴仰晴)1 and Xin-fan Huang (黄信凡)1 and Shunri Oda},
  title = {Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices},
  journal = {Chinese Physics B},
  year = 2016,
}

@article{CTT100711252,
  author = {Shotaro Yamazaki and Yoshifumi Nakamine and Ran Zheng and Masahiro Kouge and Tetsuya Ishikawa and Koichi Usami and Tetsuo Kodera and Yukio Kawano and Shunri Oda},
  title = {Formation of three-dimensionally integrated nanocrystalline silicon particles by dip-coating method},
  journal = {Japanese Journal of Applied Physics},
  year = 2015,
}

@article{CTT100700940,
  author = {S. Ihara and A. Andreev and D. A. Williams and T. Kodera and S. Oda},
  title = {Quantum dots in single electron transistors with ultrathin silicon-on-insulator structures},
  journal = {Applied Physics Letters},
  year = 2015,
}

@article{CTT100698246,
  author = {Dalin Zhang and Zhi Liu and Dongliang Zhang and Xu Zhang and Junying Zhang and Jun Zheng and Yuhua Zuo and Chunlai Xue and Chuanbo Li and Shunri Oda and Buwen Cheng and Qiming Wang},
  title = {Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular},
  journal = {The Journal of Physical Chemistry},
  year = 2015,
}

@article{CTT100704789,
  author = {Tomohiro Noguchi and Kodai Morita and Marolop Simanullang and Zhengyu Xu and Tetsuo Kodera and Yukio Kawano and Shunri Oda},
  title = {Ge/Si core/shell nanowires with controlled low temperature grown Si shell thickness},
  journal = {Phys. Status Solidi A},
  year = 2015,
}

@article{CTT100685343,
  author = {Kosuke Horibe and Tetsuo Kodera and Shunri Oda},
  title = {Lithographically defined few-electron silicon quantum dots based on a silicon-on-insulator substrate},
  journal = {Applied Physics Letters},
  year = 2015,
}

@article{CTT100704732,
  author = {K. Horibe and T. Kodera and S. Oda},
  title = {Lithographically-defined few-electron silicon quantum dots based on a silicon-on-insulator substrate},
  journal = {Applied Physics Letters},
  year = 2015,
}

@article{CTT100704790,
  author = {Kosuke Horibe and Tetsuo Kodera and Shunri Oda},
  title = {Back-action-induced excitation of electrons in a silicon quantum dot with a single-electron transistor charge sensor},
  journal = {Applied Physics Letters},
  year = 2015,
}

@article{CTT100685346,
  author = {Akhmadi Surawijaya and Yukio Kawano and Shunri Oda},
  title = {Proposal for fast-response radial Schottky junction photodetectors based on silicon nanowires},
  journal = {Japanese Journal of Applied Physics},
  year = 2015,
}

@article{CTT100677677,
  author = {Kazufumi Ikemoto and Yoshifumi Nakamine and Yukio Kawano and Shunri Oda},
  title = {In-Situ Monitoring of Silicon Nanocrystal Deposition with Pulsed SiH4 Supply by Optical Emission Spectroscopy of Ar Plasma},
  journal = {Japanese Journal of Applied Physics},
  year = 2014,
}

@article{CTT100704788,
  author = {Ko Yamada and Tetsuo Kodera and Tomohiro Kambara and Shunri Oda},
  title = {Fabrication and characterization of p-channel Si double quantum dots},
  journal = {Applied Physics Letters},
  year = 2014,
}

@article{CTT100677503,
  author = {J. Kamioka and T. Kodera and K. Takeda and T. Obata and S. Tarucha and S. Oda},
  title = {Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts},
  journal = {Journal of Applied Physics},
  year = 2014,
}

@article{CTT100677504,
  author = {Marolop Simanullang and Koichi Usami and Tomohiro Noguchi and Akhmadi Surawijaya and Tetsuo Kodera and Yukio Kawano and Shunri Oda},
  title = {Surface passivation of germanium nanowires using Al2O3 and HfO2 deposited via atomic layer deposition (ALD) technique},
  journal = {Japanese Journal of Applied Physics},
  year = 2014,
}

@article{CTT100666169,
  author = {T. Ferrus and A. Rossi and A. Andreev and T. Kodera and T. Kambara and W. Lin and S. Oda and D. A. Williams},
  title = {GHz photon-activated hopping between localized states in a silicon quantum dot},
  journal = {New Journal of Physics},
  year = 2014,
}

@article{CTT100666171,
  author = {Marolop Simanullang and Koichi Usami and Tetsuo Kodera and Yukio Kawano and Shunri Oda},
  title = {Microscopic study of germanium nanowires grown via gold-catalyzed chemical vapor deposition below the eutectic temperature},
  journal = {Journal of Crystal Growth},
  year = 2013,
}

@article{CTT100659835,
  author = {M. A. Sulthoni and T. Kodera and Y. Kawano and S. Oda},
  title = {Optimization and Tunnel Junction Parameters Extraction of Electro-statically Defined Silicon Double Quantum Dots Structure},
  journal = {Japanese Journal of Applied Physics},
  year = 2013,
}

@article{CTT100659663,
  author = {Tsunaki Takahashi and Shunri Oda and Ken Uchida},
  title = {Methodology for Evaluating Operation Temperatures of Fin-Type Field-Effect Transistors Connected by Interconnect Wires},
  journal = {Japanese Journal of Applied Physics},
  year = 2013,
}

@article{CTT100654225,
  author = {K. Takeda and T. Obata and Y. Fukuoka and W. M. Akhtar and J. Kamioka and T. Kodera and S. Oda and S. Tarucha},
  title = {Characterization and suppression of low-frequency noise in Si/SiGe quantum point contacts and quantum dots},
  journal = {Appl. Phys. Lett},
  year = 2013,
}

@article{CTT100659658,
  author = {Teruyuki Ohashi and Shunri Oda and Ken Uchida},
  title = {Impact of Deformation Potential Increase at Si/SiO$_{2}$ Interfaces on Stress-Induced Electron Mobility Enhancement in Metal–Oxide–Semiconductor Field-Effect Transistors},
  journal = {Japanese Journal of Applied Physics},
  year = 2013,
}

@article{CTT100652830,
  author = {SHUNRI ODA and Jannatul Susoma and Yoshifumi Nakamine and Tetsuo Kodera},
  title = {Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High Performance Electron Devices},
  journal = {Japanese Journal of Applied Physics},
  year = 2013,
}

@article{CTT100652836,
  author = {Daichi Suzuki and Shunri Oda and Yukio Kawano},
  title = {GaAs/AlGaAs field-effect transistor for tunable terahertz detection and spectroscopy with built-in signal modulation},
  journal = {Applied Physics Letters},
  year = 2013,
}

@article{CTT100659660,
  author = {Aya Shindome and Yu Doioka and Nobuyasu Beppu and Shunri Oda and Ken Uchida},
  title = {Experimental Study of Two-Terminal Resistive Random Access Memory Realized in Mono- and Multilayer Exfoliated Graphene Nanoribbons},
  journal = {Japanese Journal of Applied Physics},
  year = 2013,
}

@article{CTT100654226,
  author = {Tomohiro Kambara and Tetsuo Kodera and Yasuhiko Arakawa and Shunri Oda},
  title = {Dual Function of Single Electron Transistor Coupled with Double Quantum Dot: Gating and Charge Sensing},
  journal = {Jpn. J. Appl. Phys},
  year = 2013,
}

@article{CTT100652829,
  author = {Tsunaki Takahashi and Nobuyasu Beppu and Kunro Chen and Shunri Oda and Ken Uchida},
  title = {Self-Heating Effects and Analog Performance Optimization of Fin-Type Field-Effect Transistors},
  journal = {Japanese Journal of Applied Physics},
  year = 2013,
}

@article{CTT100654586,
  author = {K. Someno and K. Usami and T. Kodera and Y. Kawano and M. Hatano and S. Oda},
  title = {Photoluminescence of Nanocrystalline Silicon Quantum Dots with Various Sizes and Various Phosphorus Doping Concentrations prepared by Very High Frequency Plasma},
  journal = {Jpn. J. Appl. Phys},
  year = 2012,
}

@article{CTT100654581,
  author = {G. Yamahata and T. Kodera and H. O. H. Churchill and K. Uchida and C. M. Marcus and S. Oda},
  title = {Magnetic field dependence of Pauli spin blockade: A window into the sources of spin relaxation in silicon quantum dots},
  journal = {Physical Review B},
  year = 2012,
}

@article{CTT100654707,
  author = {M. A. Sulthoni and T. Kodera and Y. Kawano and S. Oda},
  title = {A Multi-purpose Electrostatically Defined Silicon Quantum Dots},
  journal = {Jpn. J. Appl. Phys},
  year = 2012,
}

@article{CTT100654587,
  author = {K. Horibe and T. Kodera and T. Kambara and K. Uchida and S. Oda},
  title = {Key capacitive parameters for designing single-electron transistor charge sensors},
  journal = {J. Appl. Phys},
  year = 2012,
}

@article{CTT100654589,
  author = {T. Ferrus and A. Rossi and W. Lin and D. A. Williams and T. Kodera and S. Oda},
  title = {Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots},
  journal = {AIP Advances 2},
  year = 2012,
}

@article{CTT100652938,
  author = {Muhammad A. Rafiq and Katsunori Masubuchi and Zahid A. K. Durrani and Alan Colli and Hiroshi Mizuta and William I. Milne and Shunri Oda},
  title = {High ON/OFF ratio and multimode transport in silicon nanochains field effect},
  journal = {Applied Physics Letters},
  year = 2012,
}

@article{CTT100652937,
  author = {Jean Tarun and Shaoyun Huang and Yasuhiro Fukuma and Hiroshi Idzuchi and YoshiChika Otani and Naoki Fukata and Koji Ishibashi and Shunri Oda},
  title = {Temperature Evolution of Spin Polarized Electron Tunneling in Silicon Nanowire-Permalloy Lateral Spin Valve System},
  journal = {Applied Physics Express},
  year = 2012,
}

@article{CTT100635132,
  author = {Muhammad Amin Sulthoni and Tetsuo Kodera and Yukio Kawano and Shunri Oda},
  title = {A Multi-Purpose Electrostatically Defined Silicon Quantum Dot Structure},
  journal = {Japanese Journal of Applied Physics},
  year = 2012,
}

@article{CTT100635134,
  author = {Muhammad A. Rafiq and Katsunori Masubuchi and Zahid A. K. Durrani and Alan Colli and Hiroshi Mizuta and William I. Milne and Shunri Oda},
  title = {Conduction Bottleneck in Silicon Nanochain Single Electron Transistors Operating at Room Temperature},
  journal = {Japanese Journal of Applied Physics},
  year = 2012,
}

@article{CTT100654584,
  author = {Marolop Simanullang and Ayse Seyhan and Koichi Usami and Tetsuo Kodera and Yukio Kawano and Shunri Oda},
  title = {Low-temperature growth of Ge nanowires by vapor-liquid-solid chemical vapor deposition},
  journal = {ECS Transactions},
  year = 2012,
}

@article{CTT100654709,
  author = {Y. Nakamine and T. Kodera and K. Uchida and S. Oda},
  title = {Removal of Surface Oxide Layer from Silicon Nanocrystals by Hydrogen Fluoride Vapor Etching},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100632888,
  author = {Marolop Simanullang and Koichi Usami and Tetsuo Kodera and Ken Uchida and Shunri Oda},
  title = {Growth of narrow and straight germanium nanowires by vapour-liquid-solid chemical-vapour-deposition},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100654227,
  author = {N. Kadotani and T. Ohashi and T. Takahashi and S. Oda and K. Uchida},
  title = {Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100654865,
  author = {Marolop Simanullang and Koichi Usami and Tetsuo Kodera and Ken Uchida and Shunri Oda},
  title = {Germanium nanowires with 3-nm-diameter prepared by low temperature vapour-liquid-solid chemical vapour deposition},
  journal = {Journal of Nanoscience and Nanotechnology},
  year = 2011,
}

@article{CTT100654866,
  author = {M. A. Sulthoni and T. Kodera and K. Uchida and S. Oda},
  title = {Numerical simulation study of electrostatically defined silicon double quantum dot device},
  journal = {J. Appl. Phys.},
  year = 2011,
}

@article{CTT100630271,
  author = {Y. Ogawa and Y. Yuasa and F. Minami and S. Oda},
  title = {Tip-enhanced Raman mapping of a single Ge nanowire},
  journal = {Applied Physics Letters},
  year = 2011,
}

@article{CTT100654599,
  author = {BERRIN PINAR ALGUL and 小寺 哲夫 and 小田 俊理 and 内田 建},
  title = {Study on Device Parameters of Carbon Nanotube Field Electron Transistors to Realize Steep Subthreshold Slope of Less than 60 mV/Decade},
  journal = {Jpn. J. Appl. Phys},
  year = 2011,
}

@article{CTT100654871,
  author = {A. Rossi and T. Ferrus and W. Lin and T. Kodera and D. A. Williams and S. Oda},
  title = {Detection of variable tunneling rates in silicon quantum dots},
  journal = {Appl. Phys. Lett.},
  year = 2011,
}

@article{CTT100619835,
  author = {C. B. Li and K. Usami and H. Mizuta and S. Oda},
  title = {Growth of Ge-Si nanowires heterostructure via chemical vapour deposition},
  journal = {Thin Solid Films},
  year = 2011,
}

@article{CTT100619834,
  author = {Jean L. Tarun and Shaoyun Huang and Y. Fukuma and H. Idzuchi and Y. Otani and Naoki Fukata and Koji Ishibashi and Shunri Oda},
  title = {Demonstration of spin valve effects in Silicon nanowires},
  journal = {Journal of Applied Physics},
  year = 2011,
}

@article{CTT100619837,
  author = {Tomohiro Kambara and Tetsuo Kodera and Tsunaki Takahashi and Gento Yamahata and Ken Uchida and Shunri Oda},
  title = {Simulation study of charge modulation in coupled quantum dots in silicon},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100619829,
  author = {T. Takahashi and T. Kodera and S. Oda and K.  Uchida},
  title = {Experimental study on subband structures and hole transport in (110) Si p-type metal-oxide-semiconductor field-effect transistors under high magnetic field},
  journal = {Journal of Applied Physics},
  year = 2011,
}

@article{CTT100619789,
  author = {Y. Nakamine and N. Inaba and T. Kodera and K. Uchida and R. N. Pereira and A. R. Stegner and M. S. Brandt and M.  Stutzmann and S. Oda},
  title = {Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100654970,
  author = {Tetsuo Kodera and Gento Yamahata and Tomohiro Kambara and Kousuke Horibe and Thierry  Ferrus and David A. Williams and Yasuhiko Arakawa and SHUNRI ODA},
  title = {Realization of Lithographically-Defined Silicon Quantum Dots without Unintentional Localized Potentials},
  journal = {AIP Conference Proceedings},
  year = 2011,
}

@article{CTT100654228,
  author = {N. Kadotani and T. Takahashi and T. Ohashi and S. Oda and K. Uchida},
  title = {Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1E18 cm-3 and silicon-on-insulator thickness of less than 10 nm},
  journal = {Journal of Applied Physics},
  year = 2011,
}

@article{CTT100639220,
  author = {Y. Nakamine and T. Kodera and K. Uchida and S. Oda},
  title = {Removal of Surface Oxide Layer from Silicon Nanocrystals by Hydrogen Fluoride Vapor Etching},
  journal = {},
  year = 2011,
}

@article{CTT100619850,
  author = {T. Ishikawa and H. Nikaido and K. Usami and K. Uchida and S. Oda},
  title = {Fabrication of Nanosilicon Ink and Two-Dimensional Array of Nanocrystalline Silicon Quantum Dots},
  journal = {Japanese Journal of Applied Physics},
  year = 2010,
}

@article{CTT100607933,
  author = {X. Zhou and M. A. Rafiq and H. Mizuta and S. Oda},
  title = {Size effect on hopping conduction in silicon nanocrystals},
  journal = {AIP Conf. Proc},
  year = 2010,
}

@article{CTT100598610,
  author = {T. Nagami and Y. Tsuchiya and K. Uchida and H. Mizuta and S. Oda},
  title = {Scaling Analysis of Nanoelectromechanical Memory Devices},
  journal = {Japanese Journal of Applied Physics},
  year = 2010,
}

@article{CTT100624099,
  author = {Jun Ogi and Mohammad Adel Ghiass and Tetsuo Kodera and Yoshishige Tsuchiya and Ken Uchida and Shunri Oda and Hiroshi Mizuta},
  title = {Suspended Quantum Dot Fabrication on a Heavily Doped Silicon Nanowire by Suppressing Unintentional Quantum Dot Formation},
  journal = {Japanese Journal of Applied Physics},
  year = 2010,
}

@article{CTT100624106,
  author = {高橋綱己 and 山端元音 and 小木純 and 小寺哲夫 and 小田俊理 and 内田建},
  title = {「強磁場印加による(110)pMOSFETサブバンド構造の直接的観測」},
  journal = {『応用物理学会シリコンテクノロジー分科会研究集会予稿集』},
  year = 2010,
}

@article{CTT100624105,
  author = {Jun Ogi and Thierry Ferrus and Tetsuo Kodera and Yoshishige Tsuchiya and Ken Uchida and David A. Williams and Shunri Oda and Hiroshi Mizuta},
  title = {Experimental Observation of Enhanced Electron–Phonon Interaction in Suspended Si Double Quantum Dots},
  journal = {Japanese Journal of Applied Physics},
  year = 2010,
}

@article{CTT100619860,
  author = {小田俊理},
  title = {シリコンナノ結晶のCVD成長と新機能},
  journal = {日本結晶成長学会誌},
  year = 2010,
}

@article{CTT100624108,
  author = {G. Yamahata and T. Kodera and H. Mizuta and K. Uchida and S. Oda and H. Mizuta},
  title = {Control of Inter-dot Electrostatic Coupling by a Side Gate in Silicon Double Quantum Dot Operating at 4.5 K},
  journal = {Appl. Phys. Express.},
  year = 2009,
}

@article{CTT100591370,
  author = {Xin Zhou and Ken Uchida and hiroshi mizuta and SHUNRI ODA},
  title = {Electron transport in surface oxidized Si nanocrystal ensembles with thin film transistor structure},
  journal = {Journal of Applied Physics},
  year = 2009,
}

@article{CTT100585613,
  author = {Chuanbo Li and Kouichi Usami and T. Muraki and H. Mizuta and K. Uchida and S. Oda},
  title = {The impacts of surface conditions on the vapor-liquid-solid growth of germanium nanowires on Si (100) substrate},
  journal = {Applied Physics Letters},
  year = 2009,
}

@article{CTT100591372,
  author = {Chuanbo Li and Kouichi Usami and Hiroshi Mizuta and SHUNRI ODA},
  title = {Vapor-solid-solid radial growth of Ge nanowires},
  journal = {Journal of Applied Physics},
  year = 2009,
}

@article{CTT100585298,
  author = {G. Yamahata and Y. Tsuchiya and H. Mizuta and K. Uchida and S. Oda},
  title = {Electron transport through silicon serial triple quantum dots},
  journal = {Solid State Electronics},
  year = 2009,
}

@article{CTT100585297,
  author = {D. Hippo and Y. Urakawa and Y. Tsuchiya and H. Mizuta and N. Koshida and S. Oda},
  title = {Spontaneous Emission Control of Silicon Nanocrystals by Silicon Three-Dimensional Photonic Crystal Structure Fabricated by Self-Aligned Two-Directional Electrochemical Etching Method},
  journal = {Materials Chemistry and Physics},
  year = 2009,
}

@article{CTT100598688,
  author = {R. Singha and S. Das and Achintya Dhar and Samir K. Lahiri and Samit K. Ray and Akhmadi Surawijaya and Shunri Oda},
  title = {Single Hole Charging at Room Temperature of Ge Quantum Dots Grown on Si(001) by},
  journal = {Nanoscience and Nanotechnology Letters},
  year = 2009,
}

@article{CTT100584674,
  author = {Benjamin Henri Jose Pruvost and K. Uchida and H. Mizuta and S. Oda},
  title = {Design optimization of NEMS switches for suspended-gate single-electron transistor applications},
  journal = {IEEE Transactions on Nanotechnology},
  year = 2009,
}

@article{CTT100584671,
  author = {C. B. Li and K. Usami and G. Yamahata and Y. Tsuchiya and H. Mizuta and S. Oda},
  title = {Position-Controllable Ge Nanowires Growth on Patterned Au Catalyst Substrate},
  journal = {Applied Physics Express},
  year = 2009,
}

@article{CTT100591383,
  author = {Tasuku Nagami and Yoshishige Tsuchiya and Shinichi Saito and Tadashi Arai and Toshikazu Shimada and hiroshi mizuta and SHUNRI ODA},
  title = {Electro-Mechanical Simulation of Switching Characteristics for Nanoelectromechanical},
  journal = {Japanese Journal of Applied Physics},
  year = 2009,
}

@article{CTT100623972,
  author = {Hiroshi Mizuta and Mario A.G. Ramirez and Yoshishige Tsuchiya and Tasuku Nagami and Shun-ichiro Sawai and Shunri Oda and Masakuni Okamoto},
  title = {MULTI-SCALE SIMULATION OF HYBRID SILICON NANO-ELECTROMECHANICAL (NEM) INFORMATION SYSTEMS},
  journal = {Journal of Automation, Mobile Robotics & Intelligent Systems},
  year = 2009,
}

@article{CTT100585368,
  author = {Xin Zhou and K. Uchida and H. Mizuta and S. Oda},
  title = {Carrier transport by field enhanced thermal detrapping in Si nanocrystals thin films},
  journal = {},
  year = 2009,
}

@article{CTT100591371,
  author = {Benjamin Henri Jose Pruvost and Ken Uchida and hiroshi mizuta and SHUNRI ODA},
  title = {Design of New Logic Architectures utilizing Optimized Suspended-Gate Single-Electron Transistors},
  journal = {IEEE Transactions on Nanotechnology},
  year = 2009,
}

@article{CTT100591348,
  author = {MANOHARAN MURUGANATHAN and Yoshishige Tsuchiya and SHUNRI ODA and hiroshi mizuta},
  title = {Silicon-on-Insulator-Based Radio Frequency Single-Electron Transistors Operating at Temperatures above 4.2 K},
  journal = {Nano Letters},
  year = 2008,
}

@article{CTT100591350,
  author = {Muhammand Rafiq and Z. A. K. Durrani and hiroshi mizuta and A Colli and P Servati and A. C.  Ferrari and W. I.  Milne and SHUNRI ODA},
  title = {Field-dependant hopping conduction in silicon nanocrystal films},
  journal = {Journal of Applied Physics},
  year = 2008,
}

@article{CTT100588854,
  author = {Saeed Akhtar and A Tanaka and K. Usami and Y. Tsuchiya and S. Oda},
  title = {Influence of the Crystal Orientation of Substrate on Low Temperature Synthesis of Silicon Nanowires from Si2H6},
  journal = {Thin Solid Films},
  year = 2008,
}

@article{CTT100588853,
  author = {H-J Cheong and A. Tanaka and D. Hippo and K. Usami and Y.  Tsuchiya and H. Mizuta and S. Oda},
  title = {Visible Electroluminescence from Spherical-shaped Silicon Nanocrystals},
  journal = {Japanese Journal of Applied Physics},
  year = 2008,
}

@article{CTT100586793,
  author = {D. Hippo and Y. Nakamine and K. Urakawa and Y. Kawata and Y.  Tsuchiya and H. Mizuta and N. Koshida and S. Oda},
  title = {Formation Mechanism of 100 nm-Scale Periodic-Structures in Silicon Using Magnetic-Field-Assisted Anodization},
  journal = {Japanese Journal of Applied Physics},
  year = 2008,
}

@article{CTT100566750,
  author = {M. Manoharan and Shunri Oda and Hiroshi Mizuta},
  title = {Impact of channel constrictions on the formation of multiple tunnel junctions in heavily doped silicon single electron transistors},
  journal = {Applied Physics Letters},
  year = 2008,
}

@article{CTT100566744,
  author = {Y. Kawata and Y.Tsuchiya and S.Oda and H. Mizuta},
  title = {Study of Single-Charge Polarization on a Pair of Charge Qubits Integrated Onto a Silicon Double},
  journal = {IEEE TRANSACTIONS ON NANOTECHNOLOGY},
  year = 2008,
}

@article{CTT100624003,
  author = {X. Zhou and K. Usami and M. A. Rafiq. H. Mizuta and Y. Tsuchiya and S. Oda},
  title = {Influence of nanocrystal size on conduction mechanism across silicon nanocrystals},
  journal = {Journal of Applied Physics},
  year = 2008,
}

@article{CTT100585540,
  author = {Gento Yamahata and Yoshishige Tsuchiya and Shunri Oda and Z. A. K. Durrani},
  title = {Control of Electrostatic Coupling Observed for Silicon Double Quantum Dot Structures},
  journal = {Japanese Journal of Applied Physics},
  year = 2008,
}

@article{CTT100566776,
  author = {Saeed AKHTAR and Kouichi USAMI and Yoshishige TSUCHIYA and Hiroshi MIZUTA and Shunri ODA},
  title = {Size-Dependent Structural Characterization of Silicon Nanowires},
  journal = {Japanese Journal of Applied Physics},
  year = 2008,
}

@article{CTT100585538,
  author = {Y. Kawata and SHUNRI ODA and Tomohiro Yamaguchi and Koji Ishibashi and Yoshishige},
  title = {Observation of Quantum Level Spectrum for Silicon Double Single-Electron Transistors},
  journal = {Applied Physics Express},
  year = 2008,
}

@article{CTT100604228,
  author = {J. Ogi and Y. Tsuchiya and H. Mizuta and S. Oda},
  title = {Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge},
  journal = {Microelectronics Engineering},
  year = 2008,
}

@article{CTT100566697,
  author = {M. Manoharan and Benjamin Henri Jose Pruvost and Hiroshi Mizuta and Shunri Oda},
  title = {Impact of key circuit parameters onsignal-to-noise ratio characteristics for theradio-frequency single electron transistors},
  journal = {IEEE Transactions on Nanotechnology},
  year = 2008,
}

@article{CTT100585532,
  author = {A.Tanaka and Y.Tsuchiya and kouichi usami and S Saito and T.Arai and H.Mizuta and S.Oda},
  title = {Synthesis of Assembled Nanocrystalline Si Dots Film by the Langmuir-Blodgett Technique},
  journal = {Japanese Journal of Applied Physics},
  year = 2008,
}

@article{CTT100568413,
  author = {M. A. Rafiq and Z. A. K. Durrani and H. Mizuta and A Colli and P Servati and A. C.  Ferrari and W. I.  Milne and S. Oda},
  title = {Room temperature single electron charging in single silicon nanochains},
  journal = {JOURNAL OF APPLIED PHYSICS},
  year = 2008,
}

@article{CTT100585531,
  author = {Benjamin Henri Jose Pruvost and H. Mizuta and S. Oda},
  title = {Voltage-limitation-free analytical single-electron transistor model incorporating the effects of spin-degenerate discrete energy states},
  journal = {Journal of Applied Physics},
  year = 2008,
}

@article{CTT100566748,
  author = {M. Manoharan and Yoshishige Tsuchiya and Shunri Oda and Hiroshi Mizuta},
  title = {Stochastic Coulomb blockade in coupled asymmetric silicon dots formed by pattern-dependent oxidation},
  journal = {},
  year = 2008,
}

@article{CTT100591590,
  author = {Hiroshi Mizuta and Shunri Oda},
  title = {Bottom-up approach to silicon nanoelectronics},
  journal = {Microelectronics Journal},
  year = 2008,
}

@article{CTT100566753,
  author = {M. Manoharan and Yoshiyuki Kawata and Yoshishige Tsuchiya and Shunri Oda and Hiroshi Mizuta},
  title = {Strongly coupled multiple-dot characteristics in dual recess structured silicon channel},
  journal = {Applied Physics Letters},
  year = 2008,
}

@article{CTT100566752,
  author = {Yangdong ZHENG and Hiroshi MIZUTA and Shunri ODA},
  title = {Theoretical Study of Nonequilibrium Electron Transport and Charge Distribution in a Three-site Quantum Wire},
  journal = {Japanese Journal of Applied Physics},
  year = 2008,
}

@article{CTT100566745,
  author = {Saeed Akhtar and Koichi Usami and Yoshishige Tsuchiya and Hiroshi Mizuta and Shunri Oda},
  title = {Vapor–Liquid–Solid Growth of Small- and Uniform-Diameter Silicon Nanowiresat Low Temperature from Si2H6},
  journal = {},
  year = 2008,
}

@article{CTT100566743,
  author = {Yangdong Zheng and Hiroshi Mizuta and Shunri Oda},
  title = {Nonequilibrium transport properties for a three-site quantum wire model},
  journal = {physica status solidi (c)},
  year = 2008,
}

@article{CTT100566693,
  author = {Y. Kawata and M. Khalafalla and K. Usami and Y. Tsuchiya, and H. Mizuta and S. Oda},
  title = {Integration of tunnel-coupled double nanocrystalline silicon quantum dots with a multiple gate single-electron transistor Japanese},
  journal = {Journal of Applied Physics},
  year = 2007,
}

@article{CTT100542037,
  author = {Tasuku Nagami and hiroshi mizuta and N.Momo and Yoshishige Tsuchiya and S. Saito and T. Arai and T. Shimada and S. Oda},
  title = {Three-dimensional numerical analysis of switching properties of high-speed and non-volatile nanoelectromechanical memory},
  journal = {IEEE Trans. Electron Devices},
  year = 2007,
}

@article{CTT100566696,
  author = {S. Oda and S. Y. Huang and M. A. Salem and D. Hippo and H. Mizuta},
  title = {ChargeStorage and Electron/Light Emission Properties of Silicon Nanocrystals},
  journal = {Physica E},
  year = 2007,
}

@article{CTT100566692,
  author = {B. Pruvost and H. Mizuta and S. Oda},
  title = {3-D Design and Analysis of Functional NEMS-gate MOSFETs and SETs},
  journal = {IEEE Transactions on Nanotechnology},
  year = 2007,
}

@article{CTT100591365,
  author = {daihei hippo and Kei Urakawa and Yoshiyuki Kawata and Yoshishige Tsuchiya and hiroshi mizuta and Nobuyoshi Koshida and SHUNRI ODA},
  title = {New Design Concept and Fabrication Process for Three-Dimensional Silicon Photonic Crystal Structures},
  journal = {Japanese Journal of Applied Physics},
  year = 2007,
}

@article{CTT100591593,
  author = {M. Khalafalla and Z. A.K. Durrani and H. Ahmed and S. Oda and H. Mizuta},
  title = {Observation of Interdot Coupling Phenomena in Nanocrystalline Silicon Point-Contact Structures},
  journal = {Current Applied Physics},
  year = 2006,
}

@article{CTT100591592,
  author = {A. Surawijaya and H. Mizuta and S. Oda},
  title = {Observation and Analysis of Tunneling Properties of a Single Spherical Nanocrystalline Silicon Quantum Dot},
  journal = {Japanese Journal of Applied Physics},
  year = 2006,
}

@article{CTT100529188,
  author = {M. Khalafalla and H. Mizuta and Z. A.K. Durrani and H. Ahmed and S. Oda},
  title = {Observation of Interdot Coupling Phenomena in Nanocrystalline Silicon Point-Contact Structures},
  journal = {Current Applied Physics},
  year = 2006,
}

@article{CTT100529178,
  author = {Y. Tsuchiya and K. Takai and N. Momo and T. Nagami and S. Yamaguchi and T. Shimada and H. Mizuta and S. Oda},
  title = {Nano-electro-mechanical nonvolatile memory device incorporating nanocrystalline Si dots},
  journal = {Journal of Applied Physics},
  year = 2006,
}

@article{CTT100529176,
  author = {M. A. Rafiq and Y. Tsuchiya and H. Mizuta and S. Oda and S. Uno and Z. A. K. Durrani and W. I. Milne},
  title = {Hopping conduction in size-controlled Si nanocrystals},
  journal = {Journal of Applied Physics},
  year = 2006,
}

@article{CTT100591591,
  author = {A. Tanaka and Y. Tsuchiya and K. Usami and H. Mizuta and S. Oda},
  title = {High-Density Assembly of Nanocrystalline Silicon Quantum Dots},
  journal = {Current Applied Physics},
  year = 2006,
}

@article{CTT100591362,
  author = {Muhammand Rafiq and Yoshishige Tsuchiya and hiroshi mizuta and SHUNRI ODA and S． Uno and Z. A. K. Durrani and W. I.  Milne},
  title = {Charge injection and trapping in silicon nanocrystals},
  journal = {Applied Physics Letters},
  year = 2005,
}

@article{CTT100386162,
  author = {M. A. Salem and Y. Tsuchiya and K. Usami and H. Mizuta and S. Oda},
  title = {Study of charge quantization in individual silicon quantum dots using Kelvin Probe Force Microscopy},
  journal = {Japanese Journal of Applied Physics},
  year = 2005,
}

@article{CTT100393701,
  author = {S. Huang and S. Oda},
  title = {Charge storage in nitrided nanocrystalline silicon dots},
  journal = {Applied Physics Letters},
  year = 2005,
}

@article{CTT100393700,
  author = {M. A. Salem and H. Mizuta and S. Oda and Y. Fu and M. Willander},
  title = {Atomic force microscope current-imaging study for current density through nanocrystalline silicon dots embedded in SiO2},
  journal = {Japanese Journal of Applied Physics},
  year = 2005,
}

@article{CTT100393698,
  author = {Y. D. Zheng and H Mizuta and Y. Tsuchiya and M. Endo and D. Sato and S. Oda},
  title = {In situ real-time spectroscopic ellipsometry study of HfO2 thin films grown by using the pulsed-source MOCVD},
  journal = {Journal of Applied Physics},
  year = 2005,
}

@article{CTT100386146,
  author = {S. Oda},
  title = {Characterization and Device Applications of Nanocrystalline Silicon Quantum Dots Prepared by VHF Plasma Processes},
  journal = {Gordon Research Conference on Plasma Processing Science},
  year = 2004,
}

@article{CTT100386147,
  author = {M. A. Salem and Y. Tsuchiya and K. Usami and H. Mizuta and S. Oda},
  title = {Study of charge quantization in individual silicon quantum dots using Kelvin Probe Force Microscopy},
  journal = {Solid State Devices and Materials Conference, Extended Abstracts},
  year = 2004,
}

@article{CTT100386148,
  author = {H. Mizuta and M. Khalafalla and Z. A.K. Durrani and S. Uno and N. Koshida and Y. Tsuchiya and S. Oda},
  title = {Electron Transport Properties and Device Applications of Nanocrystalline Silicon Quantum Dots},
  journal = {Electrochemical Society Meeting},
  year = 2004,
}

@article{CTT100386150,
  author = {H. Mizuta and M. Khalafalla and Z. A.K. Durrani and S. Uno and N. Koshida and Y. Tsuchiya and S. Oda},
  title = {Bottom-up Silicon Nanoelectronics},
  journal = {ICSICT},
  year = 2004,
}

@article{CTT100386152,
  author = {Y. Tsuchiya and T. Nakatsukasa and H. Mizuta and S. Oda and A. Kojima and N. Koshida},
  title = {Quasiballistic Electron Emission from Planarized Nanocrystalline-Si Cold Cathode},
  journal = {MRS Fall Meeting},
  year = 2004,
}

@article{CTT100386154,
  author = {S. Oda},
  title = {Nanocrystalline Silicon Quantum Dot Devices},
  journal = {International Symposium on Molecular Nano-Engineering and Its Development into Microsystems},
  year = 2004,
}

@article{CTT100386155,
  author = {S. Huang and K. Arai and K. Usami and S. Oda},
  title = {Towards Long-Term Retention-Time Single-Electron-Memory Devices Based on Nitrided Nanocrystalline Silicon Dots},
  journal = {IEEE Transactions on Nanotechnology},
  year = 2004,
}

@article{CTT100386156,
  author = {S. Kanjanachuchai and Y. Tsuchiya and K. Usami and S. Oda},
  title = {Nanocrystalline silicon dot displacement using speed-controlled tapping-mode atomic force microscopy},
  journal = {Microelectronic Engineering},
  year = 2004,
}

@article{CTT100386160,
  author = {M. A. Salem and H. Mizuta and S. Oda},
  title = {Probing electron charging in nanocrystalline Si dots using Kelvin Probe Force Microscopy},
  journal = {Applied Physics Letters},
  year = 2004,
}

@article{CTT100383808,
  author = {土屋良重 and 藤田啓嗣 and 野平博司 and 服部健雄 and 水田博 and 小田俊理},
  title = {MOCVD法によるPrシリケート膜の作製と特性評価},
  journal = {薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別 研究会「極薄シリコン酸化膜の形成・評価・信頼性」},
  year = 2004,
}

@article{CTT100383810,
  author = {高居康介 and 山口伸也 and 土屋良重 and 嶋田壽一 and 水田博 and 小田俊理},
  title = {NEMSメモリデバイスの実現に向けた機械的特性の検討},
  journal = {第51回応用物理学関係連合講演会},
  year = 2004,
}

@article{CTT100386141,
  author = {M. Khalafalla and H. Mizuta and Z. A. K. Durrani and H. Ahmed and S. Oda},
  title = {Electron coupling states in quantum dots in nanocrystalline silicon},
  journal = {Silicon Nanoelectrinics Workshop},
  year = 2004,
}

@article{CTT100386142,
  author = {M. A. Salem and Y. Tsuchiya and K. Usami and H. Mizuta and S. Oda},
  title = {Nanoscale Observation of Size and Potential for Charged Nanocrystalline Si Dots using KFM},
  journal = {16th Internatioinal Vacuum Congress},
  year = 2004,
}

@article{CTT100386145,
  author = {M. A. Salem and H. Mizuta and S. Oda and Y. Fu and M. Willander},
  title = {AFM current imaging for surface oxidized nanocrystalline silicon dot},
  journal = {International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies},
  year = 2004,
}

@article{CTT100383809,
  author = {藤田啓嗣 and 土屋良重 and 野平博司 and 服部健雄 and 水田博 and 小田俊理},
  title = {MOCVD法によるPrシリケート膜の作製及び特性評価},
  journal = {第51回応用物理学関係連合講演会},
  year = 2004,
}

@article{CTT100383811,
  author = {S. Huang and K. Usami and Y. Tsuchiya and H. Mizuta and S. Oda},
  title = {Charge Storage in Nitrided nc.-Si Dots, Promising Memory Nodes for Nonvolatile Memory Application},
  journal = {第51回応用物理学関係連合講演会},
  year = 2004,
}

@article{CTT100383812,
  author = {M. Khalafalla and H. Mizuta and Z. A. K. Durrani and H. Ahmed and S. Oda},
  title = {Interdot coupling effects on Coulomb oscillations in dual-gated nanocrystalline silicon point-contact transistors},
  journal = {第51回応用物理学関係連合講演会},
  year = 2004,
}

@article{CTT100383813,
  author = {S. Huang and S. Oda},
  title = {Silicon Quantum Dot Based Nonvolatile Memory Devices},
  journal = {第６６回半導体集積回路技術シンポジウム},
  year = 2004,
}

@article{CTT100383814,
  author = {筆宝大平 and 水田博 and 小田俊理},
  title = {3次元フォトニック結晶構造Si量子ドットレーザの提案},
  journal = {第65回応用物理学会学術講演会},
  year = 2004,
}

@article{CTT100383815,
  author = {東島賢 and 黒川康良 and 土屋良重 and 岡本政邦 and 水田博 and 小田俊理},
  title = {第一原理計算(SIESTA)を用いたナノ結晶Si量子ドットの電子状態解析},
  journal = {第65回応用物理学会学術講演会},
  year = 2004,
}

@article{CTT100383816,
  author = {黒川康良 and 東島賢 and 土屋良重 and 岡本政邦 and 水田博 and 小田俊理},
  title = {第一原理シミュレーションによるシリコンナノロッドの電子状態解析},
  journal = {第65回応用物理学会学術講演会},
  year = 2004,
}

@article{CTT100383817,
  author = {田中敦之 and 土屋良重 and 宇佐美浩一 and 水田博 and 小田俊理},
  title = {分散溶媒を用いたナノ結晶シリコンドットの配列制御},
  journal = {第65回応用物理学会学術講演会},
  year = 2004,
}

@article{CTT100383818,
  author = {永見佑 and 百々信幸 and 土屋良重 and 斎藤慎一 and 新井唯 and 嶋田壽一 and 水田博 and 小田俊理},
  title = {NEMSメモリデバイスにおけるスイッチング動作解析},
  journal = {第65回応用物理学会学術講演会},
  year = 2004,
}

@article{CTT100383820,
  author = {M. A. Salem and H. Mizuta and S. Oda},
  title = {Kelvin probe force microscopy study of charging nanocrystalline silicon dots},
  journal = {第65回応用物理学会学術講演会},
  year = 2004,
}

@article{CTT100386134,
  author = {Y. Tsuchiya and K. Takai and N. Momo and S. Yamaguchi and T. Shimada and S. Koyama and K. Takashima and Y. Higo and H. Mizuta and S. Oda},
  title = {Nano Electromechanical Memory Device Usingnc-Si Dots},
  journal = {Silicon Nanoelectrinics Workshop},
  year = 2004,
}

@article{CTT100386135,
  author = {Y. Tsuchiya and H. Fujita and H. Mizuta and H. Nohira and T. Hattori and S. Oda},
  title = {Pr-silicate Ultrathin Films for High-k Gate Dielectrics Prepared by Metal-Organic Chemical Vapor Deposition},
  journal = {46th Electronic Materials Conference},
  year = 2004,
}

@article{CTT100386138,
  author = {Y. Tsuchiya and K. Takai and N. Momo and S. Yamaguchi and T. Shimada and H. Mizuta and S. Oda},
  title = {High-speed and nonvolatile nano electromechanical memory incorporating Si quantum dots},
  journal = {27th International Conference on Physics of Semiconductors},
  year = 2004,
}

@article{CTT100386139,
  author = {Y. Tsuchiya and T. Iwasa and A. Tanaka and K. Usami and H. Mizuta and S. Oda},
  title = {Formation of an Ordered Array of nc-Si Dots by Using a Solution Droplet Evaporation Method},
  journal = {MRS Spring Meeting},
  year = 2004,
}

@article{CTT100386140,
  author = {M. Khalafalla and H. Mizuta and Z. A. K. Durrani and H. Ahmed and S. Oda},
  title = {Observation of coherent states in coupled nanocrystalline Si double dots at 4.2K},
  journal = {27th International Conference on Physics of Semiconductors},
  year = 2004,
}

@article{CTT100591363,
  author = {Yoshishige Tsuchiya and kouichi usami and hiroshi mizuta and SHUNRI ODA},
  title = {Formation of an Ordered Array of nc-Si Dots by Using a Solution Droplet Evaporation Method},
  journal = {MRS Proceedings: Nanoparticles and Nanowire Building Blocks-Synthesis, Processing, Characterization and Theory},
  year = 2004,
}

@article{CTT100494897,
  author = {中務琢也 and 池澤健太 and 田中敦之 and 宇佐美浩一 and 土屋良重 and 小田俊理},
  title = {ﾅﾉ結晶ｼﾘｺﾝ粒径縮小化に向けたﾊﾟﾙｽｶﾞｽﾌﾟﾗｽﾞﾏﾌﾟﾛｾｽの制御},
  journal = {第64回応用物理学会学術講演会},
  year = 2003,
}

@article{CTT100494877,
  author = {S. Banerjee and S. Huang and Y. Tsuchiya and K. Usami and S. Oda},
  title = {Localized charge injection in nanocrystalline silicon dot using an atomic force microscope tip},
  journal = {第50回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100494708,
  author = {Shaoyun Huang and Souri Banerjee and Raymond T.Tung and Shunri Oda},
  title = {Electron Trapping, Storing and Emission in nanocrystalline Si dots by Capacitance-Voltage Measurements},
  journal = {Journal of Applied Physics},
  year = 2003,
}

@article{CTT100494715,
  author = {S. Banerjee and S. Y. Huang and S. Oda},
  title = {A narrow-channel few-electron-memory with nanocrystalline Si dots as floating gate: Evidencee of electron trapping and emission},
  journal = {IEEE Transactions on Nanotechnology},
  year = 2003,
}

@article{CTT100494717,
  author = {S. Oda},
  title = {NeoSilicon materials and silicon nanodevices},
  journal = {Materials Science and Engineering B},
  year = 2003,
}

@article{CTT100494862,
  author = {K. Arai and J. Omachi and S. Oda},
  title = {No-phonon assisted recombination of surface oxidized nanocrystalline silicon dots},
  journal = {Japanese Journal of Applied Physics},
  year = 2003,
}

@article{CTT100494864,
  author = {K. Arai and S. Oda},
  title = {Photoluminescence of Surface Nitrided Nanocrystalline Silicon Dots},
  journal = {Physica Status Solid (c)},
  year = 2003,
}

@article{CTT100494866,
  author = {SHUNRI ODA},
  title = {Observation of Quantum Confinement Effect in Nanocrystalline Silicon Dot Floating Gate Single Electron Memory Devices},
  journal = {Materials Research Society Symposium Proceedings},
  year = 2003,
}

@article{CTT100494882,
  author = {S. Huang and K. Arai and K. Usami and S. Oda},
  title = {Towards Long-Term Retention-Time Single-Electron-Memory Based on Nitrided Nanocrystalline Silicon Dots},
  journal = {Silicon Nanoelectrinics Workshop},
  year = 2003,
}

@article{CTT100494867,
  author = {Y. Tsuchiya and M. Endo and M. Kurosawa and R.T.Tung T. Hattori and S. Oda},
  title = {Pulsed Source MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry},
  journal = {Japanese Journal of Applied Physics},
  year = 2003,
}

@article{CTT100494870,
  author = {Shaoyun Huang and Souri Banerjee and Raymond T.Tung and Shunri Oda},
  title = {Evaluation of quantum confinement energy in nanocrystaline silicon dots from high-frequency conductance measurement},
  journal = {Journal of Applied Physics},
  year = 2003,
}

@article{CTT100494871,
  author = {S. Huang and K. Arai and K. Usami and S. Oda},
  title = {Towards Long-Term Retention-Time Single-Electron-Memory Devices Based on Nitrided Nanocrystalline Silicon Dots},
  journal = {IEEE Transactions on Nanotechnology},
  year = 2003,
}

@article{CTT100494872,
  author = {S. Banerjee and M. A. Salem and S. Oda},
  title = {Conducting-tip Atomic Force Microscopy for Injection and Probing of Localized Charges in Silicon Nanocrystals},
  journal = {Applied Physics Letters},
  year = 2003,
}

@article{CTT100494873,
  author = {中務琢也 and 中村暦 and 土屋良重 and 宇佐美浩一 and 小田俊理 and 小島明 and 越田信義},
  title = {ナノクリスタルシリコン平面型電子源の電子エネルギー分布},
  journal = {第50回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100494874,
  author = {黒澤正敏 and 吉岡健一 and 土屋良重 and 服部健雄 and 小田俊理},
  title = {パルス供給MOCVD法によるPrOxの作製と特性評価},
  journal = {第50回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100494875,
  author = {遠藤真人 and 鄭仰東 and 土屋良重 and 小田俊理},
  title = {HfO2薄膜のMOCVD成長初期のエリプソメトリによるその場観察},
  journal = {第50回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100494876,
  author = {岩佐達也 and 土屋良重 and 宇佐美浩一 and 小田俊理},
  title = {液相分散系を用いたナノクリスタルシリコンの配列技術},
  journal = {第50回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100494903,
  author = {S. Oda},
  title = {Silicon Nanodevices and NeoSilicon},
  journal = {International Conference on Materials for Advanced Technologies},
  year = 2003,
}

@article{CTT100494902,
  author = {S. Oda},
  title = {Nanocrystalline Silicon Quantum Dot Devices},
  journal = {6th Sweden-Japan QNANO Workshop},
  year = 2003,
}

@article{CTT100494901,
  author = {S. Oda},
  title = {Fabrication and Device Application of Nanocrystalline Silicon Particles},
  journal = {Gas Phase Cluster Assembling of Nanostructured Materials},
  year = 2003,
}

@article{CTT100494900,
  author = {S. Kanjanachuchai and Y. Tsuchiya and K. Usami and S. Oda},
  title = {Nanocrystalline silicon dots displacement using tapping-mode atomic force microscopy},
  journal = {Micro and Nano Engineering},
  year = 2003,
}

@article{CTT100494899,
  author = {S. Huang and K. Arai and K. Usami and Y.Tsuchiya and S. Oda},
  title = {Long-term retention-time memory devices using dual memory nodes: nanocrystalline-silicon and silicon nitride},
  journal = {第64回応用物理学会学術講演会},
  year = 2003,
}

@article{CTT100494898,
  author = {高居康介 and 山口伸也 and 土屋良重 and 嶋田壽一 and 小田俊理},
  title = {ﾅﾉ結晶ｼﾘｺﾝﾄﾞｯﾄを用いたNEMSﾒﾓﾘﾃﾞﾊﾞｲｽの提案},
  journal = {第64回応用物理学会学術講演会},
  year = 2003,
}

@article{CTT100494896,
  author = {鄭仰東 and 土屋良重 and 佐藤大典 and 小田俊理},
  title = {分光ｴﾘﾌﾟｿﾒﾄﾘによるHFO2薄幕のﾊﾟﾙｽ供給MOCVD成長過程の観察とﾓﾃﾞﾘﾝｸﾞ},
  journal = {第64回応用物理学会学術講演会},
  year = 2003,
}

@article{CTT100494895,
  author = {M. A. Salem and S. Banerjee and S. Oda},
  title = {Estimation of charge injected in a single Si dot using AFM},
  journal = {第64回応用物理学会学術講演会},
  year = 2003,
}

@article{CTT100494887,
  author = {Y. Tsuchiya and M. Endo and S. Oda},
  title = {Pulsed-source MOCVD HfO2 ultrathin film growth optimized by in situ ellipsometry monitoring},
  journal = {Solid State Devices and Materials Conference, Extended Abstracts},
  year = 2003,
}

@article{CTT100494886,
  author = {Y. Tsuchiya and T. Nakatsukasa and R. Nakamura and K. Nishiguchi and S. Oda and A. Kojima and N. Koshida},
  title = {Evidence of Quasiballistic Electron Emission from Planarized Nanocrystalline-Si Cold Cathode},
  journal = {FEMD Newsletter},
  year = 2003,
}

@article{CTT100494881,
  author = {S. Huang and S. Banerjee and Y. Tsuchiya and K. Usami and S. Oda},
  title = {Investigation of nc-Si Quantum Dot Based p/n Channel Few-Electron Devices},
  journal = {第50回応用物理学関係連合講演会},
  year = 2003,
}

@article{CTT100476602,
  author = {SHUNRI ODA},
  title = {NeoSilicon: Silicon quantum dots with controlled interparticle distance},
  journal = {International Workshop on Quantum Dots for Quantum Computing},
  year = 2002,
}

@article{CTT100476600,
  author = {S. Y. Huang and S. Banerjee and S. Oda},
  title = {Temperature and frequency dependencies of charging and discharging properties in MOS memory based on nanocrystalline silicon dot},
  journal = {Materials Research Society Symposium Proceedings},
  year = 2002,
}

@article{CTT100476599,
  author = {S. Y. Huang and S. Banerjee and S. Oda},
  title = {C-V and G-V measurements showing single electron trapping in nanocrystalline silicon dot embedded in MOS memory structure},
  journal = {Materials Research Society Symposium Proceedings},
  year = 2002,
}

@article{CTT100476598,
  author = {S. Banerjee and S. Y. Huang and T.Yamanaka and S. Oda},
  title = {Evidence of storing and erasing of electrons in nanocrystalline-Si based memory device at 77K},
  journal = {Journal of Vacuum Science and Technology},
  year = 2002,
}

@article{CTT100476304,
  author = {K. Nishuguchi and X. Zhao and S. Oda},
  title = {Nanocrystalline silicon electron emitter with a high efficiency enhanced by a planarization technique},
  journal = {Journal of Applied Physics},
  year = 2002,
}

@article{CTT100476303,
  author = {K. Nishiguchi and S. Oda},
  title = {Ballistic transport in silicon vertical transistors},
  journal = {Journal of Applied Physics},
  year = 2002,
}

@article{CTT100476609,
  author = {Y. Tsuchiya and M. Endo and M. Kurosawa and R.T.Tung T. Hattori and S. Oda},
  title = {Atomic layer-by-layer MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry},
  journal = {Solid State Devices and Materials Conference, Extended Abstracts},
  year = 2002,
}

@article{CTT100476608,
  author = {SHUNRI ODA},
  title = {Single Electron and Ballistic Transport in Silicon Devices},
  journal = {ECS International Semiconductor Technology Conference},
  year = 2002,
}

@article{CTT100476607,
  author = {S. Banerjee and S. Huang and S. Oda},
  title = {Evidence of Electron Trapping and Emission in Nanocrystalline-Si Based Memory Devices},
  journal = {Silicon Nanoelectrinics Workshop},
  year = 2002,
}

@article{CTT100476618,
  author = {Shaoyun Huang and Souri Banerjee and Shunri Oda},
  title = {Observation of Quantum Confinement Effect in Nanocrystalline Silicon Dot Floating Gate Single Electron Memory Devices},
  journal = {MRS Fall Meeting Boston},
  year = 2002,
}

@article{CTT100476606,
  author = {Souri Banerjee and Shaoyun Huang and Shunri Oda},
  title = {Operation of a narrow channel memory device with a few Si quantum dots in the active region},
  journal = {E-MRS Spring Meeting},
  year = 2002,
}

@article{CTT100476604,
  author = {K. Arai and J. Omachi and S. Oda},
  title = {Manifestation of the Quasi-Direct Recombination in Nanocrystalline Silicon Dots by Reducing the Core Diameter},
  journal = {Electrochemical Society},
  year = 2002,
}

@article{CTT100476619,
  author = {S. Y. Huang and S. Banerjee and S. Oda},
  title = {Investigation of frequency and temperature dependence of C-V and G-V characteristics in SiO2/nc-Si/SiO2sandwich structure},
  journal = {第49回応用物理学関係連合講演会},
  year = 2002,
}

@article{CTT100476620,
  author = {遠藤真人 and 黒澤正敏 and H. Sauddin､ 平野貴裕 and 服部健雄 and 土屋良重 and 小田俊理},
  title = {分光エリプソメトリによる高誘電率ゲート酸化膜成長のその場観察(2)},
  journal = {第49回応用物理学関係連合講演会},
  year = 2002,
}

@article{CTT100476621,
  author = {黒澤正敏 and 平野貴裕 and 遠藤真人 and H. Sauddin and 土屋良重 and 服部健雄 and 小田俊理},
  title = {MOCVD法によるPr酸化物の作製と評価},
  journal = {第49回応用物理学関係連合講演会},
  year = 2002,
}

@article{CTT100476622,
  author = {新井健太 and 小田俊理},
  title = {表面酸化シリコン量子ドットのPL特性の粒径依存性},
  journal = {第49回応用物理学関係連合講演会},
  year = 2002,
}

@article{CTT100476623,
  author = {西口克彦 and 趙新為 and 小田俊理},
  title = {ナノクリスタルシリコン平面型ホットエレクトロン放出素子の特性向上},
  journal = {第49回応用物理学関係連合講演会},
  year = 2002,
}

@article{CTT100476624,
  author = {S. Banerjee and S. Y. Huang and S. Oda},
  title = {Electron storing and emission in nanocrystalline Si-based memory device at 77K},
  journal = {第49回応用物理学関係連合講演会},
  year = 2002,
}

@article{CTT100476625,
  author = {Shaoyun Huang and Souri Banerjee and Shunri Oda},
  title = {Analysis of electron energy spacing in nanocrystalline silicon dots by C-V and G-V method},
  journal = {第63回応用物理学会学術講演会},
  year = 2002,
}

@article{CTT100476626,
  author = {遠藤真人 and 黒澤正敏 and 土屋良重 and 服部健雄 and R.T.Tung and 小田俊理},
  title = {分光エリプソエメトリによるHfO2による薄膜の原子層MOCVD成長その場観察},
  journal = {第63回応用物理学会学術講演会},
  year = 2002,
}

@article{CTT100476627,
  author = {小澤治 and 高居康介 and 星出祐亮 and 土屋良重 and 小田俊理},
  title = {セルフアライン金属・半導体ダブルドット単電子素子の作製と評価},
  journal = {第63回応用物理学会学術講演会},
  year = 2002,
}

@article{CTT100476629,
  author = {新井健太 and 森智彦 and 小田俊理},
  title = {表面酸化シリコン量子ドットのＰＬ特性の窒化による変化},
  journal = {第63回応用物理学会学術講演会},
  year = 2002,
}

@article{CTT100476630,
  author = {S. Huang and S. Banerjee and S. Oda},
  title = {Observation of Electron Trapping, Storage and Emission in Nanocrystalline Si Dots by C-V and G-V Measurements},
  journal = {FEMD Newsletter},
  year = 2002,
}

@article{CTT100476879,
  author = {SHUNRI ODA},
  title = {High efficiency electron/photon emission from silicon quantum dots},
  journal = {5th Sweden-Japan QNANO Workshop},
  year = 2002,
}

@article{CTT100476605,
  author = {SHUNRI ODA},
  title = {NeoSilicon material and silicon nanodevices},
  journal = {E-MRS Spring Meeting},
  year = 2002,
}

@article{CTT100476603,
  author = {S. Y. Huang and S. Banerjee and S. Oda},
  title = {Temperature and frequency dependence of charging and discharging properties in MOS memories based on nanocrystalline silicon dots},
  journal = {MRS Spring Meeting 2002 San Francisco},
  year = 2002,
}

@article{CTT100476610,
  author = {K. Arai and S. Oda},
  title = {Photoluminescence of Surface Nitrided Nanocrystalline Silicon Dots},
  journal = {2nd International Conference on Semiconductor Quantum Dots},
  year = 2002,
}

@article{CTT100460017,
  author = {S. Y. Huang and S. Banerjee and S. Oda},
  title = {Observation of Single Electron Trapping in nc-Si Dot by C-V Measurement},
  journal = {第62回応用物理学会学術講演会},
  year = 2001,
}

@article{CTT100460638,
  author = {松川康成 and 黒澤正敏 and 伊藤誠吾､服部健雄 and 小田俊理},
  title = {原子レベルで制御する高誘電率ゲート酸化膜のMOCVD成長と分光エリプソメトリ観察},
  journal = {第48回応用物理学関係連合講演会},
  year = 2001,
}

@article{CTT100460637,
  author = {B. J. Hinds and T.Yamanaka and S.Huang and R.Nakamura and S.Oda},
  title = {Quantum Confinement Polarization Model for Lifetime of Discrete Charge Stored  in Single Nano-crystalline Si Dot Floating-Gate Memory},
  journal = {第48回応用物理学関係連合講演会},
  year = 2001,
}

@article{CTT100460636,
  author = {小田俊理},
  title = {シリコンナノデバイスとネオシリコン},
  journal = {シリコンテクノロジー分科会第27回研究集会},
  year = 2001,
}

@article{CTT100460635,
  author = {SHUNRI ODA},
  title = {Nanocrystalline silicon quantum dots: fabrication, characterization and application},
  journal = {Yamada Conference LVII on Atomic-scale surface designing for functional low-dimensional materials},
  year = 2001,
}

@article{CTT100460634,
  author = {S. Y. Huang and S. Banerjee and S. Oda},
  title = {C-V and G-V measurements showing single electron trapping in nanocrystalline silicon dot embedded in MOS memory structure},
  journal = {MRS Fall Meeting},
  year = 2001,
}

@article{CTT100460633,
  author = {SHUNRI ODA},
  title = {Fabrication and device application of silicon nanostructures},
  journal = {AIST International Symposium on Nanotechnology},
  year = 2001,
}

@article{CTT100460632,
  author = {S. Oda and K. Nishiguchi},
  title = {Single electron and ballistic transport in silicon nanoscale devices},
  journal = {FSRC Science and Technology of Silicon Materials},
  year = 2001,
}

@article{CTT100460631,
  author = {S. Oda and K. Nishiguchi},
  title = {Nanocrystalline silicon quantum dots prepared by VHF plasma enhanced chemical vapor deposition},
  journal = {EUROCVD-13},
  year = 2001,
}

@article{CTT100460630,
  author = {SHUNRI ODA},
  title = {NeoSilicon materials},
  journal = {Ninth Hitachi-Cambridge Seminar},
  year = 2001,
}

@article{CTT100460629,
  author = {S. Oda and K. Nishiguchi},
  title = {Single electron and ballistic transport in silicon nanostructures},
  journal = {Sweden-Japanese Workshop on Quantum Nanostructure Devices},
  year = 2001,
}

@article{CTT100460628,
  author = {K. Nishiguchi and S. Oda},
  title = {Ballistic transport under magnetic field in a silicon vertical structure device},
  journal = {Silicon Nanoelectrinics Workshop},
  year = 2001,
}

@article{CTT100460627,
  author = {S. Oda and S. Sugai and Y. Matsukawa},
  title = {In situ ellipsometry of undoped and Ga-doped YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-d</sub> films by MOCVD},
  journal = {International Superconductivity Electronics Conference},
  year = 2001,
}

@article{CTT100460626,
  author = {B. J. Hinds and T. Yamanaka and S. Oda},
  title = {Emission Lifetime of Polarizable Charge Stored in Nano-Crystalline Si Based Single Electron Memory},
  journal = {Journal of Applied Physics},
  year = 2001,
}

@article{CTT100460020,
  author = {新井健太 and 大町純一 and 小田俊理},
  title = {表面酸化によるSi量子ドットの発光強度の増大},
  journal = {第62回応用物理学会学術講演会},
  year = 2001,
}

@article{CTT100460019,
  author = {黒澤正敏 and 遠藤真人 and 服部健雄 and 小田俊理},
  title = {原子層MOCVD法によるY<sub>2</sub>O<sub>3</sub>薄膜の作製と評価},
  journal = {第62回応用物理学会学術講演会},
  year = 2001,
}

@article{CTT100460018,
  author = {遠藤真人 and 黒澤正敏 and 服部健雄 and 小田俊理},
  title = {分光エリプソメトリによる高誘電率ゲート酸化膜成長のその場観察},
  journal = {第62回応用物理学会学術講演会},
  year = 2001,
}

@article{CTT100460016,
  author = {大町純一､西口克彦 and 新井健太､小田俊理},
  title = {Ｓｉ量子ドットのストレス誘起酸化抑制（Ｉ）:ＴＥＭ観察},
  journal = {第48回応用物理学関係連合講演会},
  year = 2001,
}

@article{CTT100460015,
  author = {西口克彦 and 趙新為 and 小田俊理},
  title = {ナノクリスタルシリコン平面型電子放出素子の最適化},
  journal = {第48回応用物理学関係連合講演会},
  year = 2001,
}

@article{CTT100460014,
  author = {新井健太､大町純一､西口克彦､小田俊理},
  title = {Ｓｉ量子ドットのストレス誘起酸化抑制（ＩＩ）：ＰＬ評価},
  journal = {第48回応用物理学関係連合講演会},
  year = 2001,
}

@article{CTT100454943,
  author = {K. Nishiguchi and X. Zhao and S. Oda},
  title = {Enhancement of Electron Emission Characteristics from Nanocrystalline Silicon by Planarization Technique},
  journal = {Device Research Conference},
  year = 2001,
}

@article{CTT100454942,
  author = {K. Arai and J. Omachi and K. Nishiguchi and S. Oda},
  title = {Photoluminescence study of the self-limiting oxidation in nanocrystalline silicon quantum dots},
  journal = {MRS Spring Meeting},
  year = 2001,
}

@article{CTT100454937,
  author = {小田俊理},
  title = {２１世紀の単電子デバイス},
  journal = {電気学会論文誌Ｃ},
  year = 2001,
}

@article{CTT100454936,
  author = {S. Oda and K. Nishiguchi},
  title = {Nanocrystalline silicon quantum dots prepared by VHF plasma enhanced chemical vapor deposition},
  journal = {Journal de Physique IV},
  year = 2001,
}

@article{CTT100454935,
  author = {Shuu'ichirou Yamamoto and Shunri Oda},
  title = {Atomic Layer-by-Layer MOCVD of Complex Metal Oxides and Related Growth Technologies},
  journal = {Chemical Vapor Deposition},
  year = 2001,
}

@article{CTT100454934,
  author = {K. Nishiguchi and S. Oda},
  title = {A self-alligned two-gate single-electron transistor derived from 0.12μm lithography},
  journal = {Applied Physics Letters},
  year = 2001,
}

@article{CTT100476634,
  author = {K. Arai and J. Omachi and K. Nishiguchi and S. Oda},
  title = {Photoluminescence study of the self-limiting oxidation in nanocrystalline silicon quantum dots},
  journal = {Materials Research Society Symposium Proceedings},
  year = 2001,
}

@article{CTT100476633,
  author = {K. Nishiguchi and X. Zhao and S. Oda},
  title = {Fabrication and characterization of cold electron emitter based on nanocrystalline silicon quantum dots},
  journal = {Materials Research Society Symposium Proceedings},
  year = 2001,
}

@article{CTT100476632,
  author = {J. Omachi and R. Nakamura and K. Nishiguchi and S. Oda},
  title = {Retardation in the oxidation rate of nanocrystalline silicon quantum dots},
  journal = {Materials Research Society Symposium Proceedings},
  year = 2001,
}

@article{CTT100476631,
  author = {B. J. Hinds and T. Yamanaka and S. Oda},
  title = {Charge Storage Mechanism in Nano-Crystalline Si Based Single Electron Memories},
  journal = {Materials Research Society Symposium Proceedings},
  year = 2001,
}

@article{CTT100444610,
  author = {S.Sugai and Y.Matsukawa and K.Shimosato and S.Oda},
  title = {Stabilization of Oxygen Diffusion in Ga-doped YBa2Cu3O7-σ Thin Films Observed by Spectroscopic Ellipsometry},
  journal = {Japanese Journal of Applied Physics},
  year = 2000,
}

@article{CTT100444609,
  author = {A. Dutta and S. P. Lee and Y. Hayafune and S. Hatatani and S. Oda},
  title = {Single Electron Tunneling Devices Based on Silicon Quantum Dots Fabricated by Plasma Process},
  journal = {Japanese Journal of Applied Physics},
  year = 2000,
}

@article{CTT100444608,
  author = {SHUNRI ODA},
  title = {An era of reform for the New Century},
  journal = {FED Journal},
  year = 2000,
}

@article{CTT100444607,
  author = {小田俊理},
  title = {２１世紀への道　電子材料－ナノシリコンとネオシリコン－},
  journal = {Electrochemistry},
  year = 2000,
}

@article{CTT100444606,
  author = {小田俊理},
  title = {ULSI技術は電気化学の時代},
  journal = {Electrochemistry},
  year = 2000,
}

@article{CTT100444605,
  author = {K. Nishiguchi and S. Oda},
  title = {Conductance quantization in nanoscale vertical-structure silicon  field-effect transistors with a wrap gate},
  journal = {Applied Physics Letters},
  year = 2000,
}

@article{CTT100443587,
  author = {Shunri Oda and Amit Dutta and Katsuhiko Nishiguchi and Bruce J.Hinds and X. Zhao and Shigeo Hatatani},
  title = {Single Electron Tunneling and Ballistic Transport in Silicon Nanodevices},
  journal = {International Symposium on Formation, Physics and Device Application of Quantum Dot Structres, Sapporo},
  year = 2000,
}

@article{CTT100443586,
  author = {Bruce J. Hinds and Amit Dutta and Takayuki Yamanaka and Shigeo Hatatani and Shunri Oda},
  title = {Nano-Crystalline Si as Floating Gate Node for Single Electron Memory Devices},
  journal = {International Symposium on Formation, Physics and Device Application of Quantum Dot Structres, Sapporo},
  year = 2000,
}

@article{CTT100443585,
  author = {Katsuhiko Nishiguchi and Shunri Oda},
  title = {Ballistic transport under magnetic field in silicon vertical transistors},
  journal = {25th International Conference on Physics of Semiconductors, Osaka},
  year = 2000,
}

@article{CTT100443584,
  author = {Katsuhiko Nishiguchi and X. Zhao and Shunri Oda},
  title = {Fabrication and characterization of nanocrystalline silicon electron emitter},
  journal = {25th International Conference on Physics of Semiconductors, Osaka},
  year = 2000,
}

@article{CTT100443583,
  author = {SHUNRI ODA},
  title = {Electron Transport in Silicon Nanodevices},
  journal = {The 8th Asia Pacific Physics Conference, Taipei},
  year = 2000,
}

@article{CTT100443582,
  author = {K. Nishiguchi and S. Oda},
  title = {Single-Electron Transistors with Two Self-Aligned Gates},
  journal = {Solid State Devices and Materials Conference, Extended Abstracts, Sendai},
  year = 2000,
}

@article{CTT100443581,
  author = {B. J. Hinds and A. Dutta and T. Yamanaka and S. Hatatani and S. Oda},
  title = {lifetime measurements of electrons stored nano-crystalline Si single electron memory devices},
  journal = {IEEE Silicon Nanoelectrics Workshop, Honolulu},
  year = 2000,
}

@article{CTT100443580,
  author = {K. Nishiguchi and S. Oda},
  title = {Ballistic transport in a silicon vertical transistor},
  journal = {IEEE Silicon Nanoelectrics Workshop, Honolulu},
  year = 2000,
}

@article{CTT100443579,
  author = {K. Nishiguchi and S. Oda},
  title = {Electron transport in a single silicon quantum dot structure using a vertical silicon probe},
  journal = {IEEE Device Research Conference, Denver},
  year = 2000,
}

@article{CTT100443578,
  author = {B. J. Hinds and A. Dutta and F. Yun and T. Yamanaka and S. Hatatani and S. Oda},
  title = {Single electron memory utilizing nano-crystalline Si over short channel silicon-on-insulator transistors},
  journal = {IEEE Device Research Conference, Denver},
  year = 2000,
}

@article{CTT100444618,
  author = {Amit Dutta and Yoshinori Hayafune and Shunri Oda},
  title = {Single Electron Memory Devices Based on Plasma Derived Silicon Nanocrystals},
  journal = {Japanese Journal of Applied Physics},
  year = 2000,
}

@article{CTT100444619,
  author = {K. Nishiguchi and S. Oda},
  title = {Electron transport in a single silicon quantum structure using a vertical silicon probe},
  journal = {Journal of Applied Physics},
  year = 2000,
}

@article{CTT100444620,
  author = {Z. Wang and S. Oda},
  title = {Electrical properties of SrTiO3/BaTiO3 strained superlattice films prepared by atomic-layer metalorganic chemical vapor deposition},
  journal = {Journal of Electrochemical Society},
  year = 2000,
}

@article{CTT100444621,
  author = {A. Dutta and S. P. Lee and Y. Hayafune and S. Oda},
  title = {Electron-Beam Direct-Writing using RD2000N for Fabrication of Nano-Devices},
  journal = {Journal of Vacuum Science and Technology},
  year = 2000,
}

@article{CTT100444622,
  author = {K. Nishiguchi and S. Hara and T. Amano and S. Hatatani and S. Oda},
  title = {Preparation of Nanocrystalline Silicon Quantum Dots by Pulsed Plasma Processes with High Deposition Rates},
  journal = {Materials Research Society Symposium Proceedings},
  year = 2000,
}

@article{CTT100444623,
  author = {Y. Fu and M. Willander and A. Dutta and S. Oda},
  title = {Carrier conduction in Si-nanocrystal-based single electron transistor-I. Effect of a gate bias},
  journal = {Superlattices and Microstructures},
  year = 2000,
}

@article{CTT100444624,
  author = {Y. Fu and M. Willander and A. Dutta and S. Oda},
  title = {Carrier conduction in Si-nanocrystal-based single electron transistor-II. Effect of a drain bias},
  journal = {Superlattices and Microstructures},
  year = 2000,
}

@article{CTT100444625,
  author = {F. Yun and B. J. Hinds and S. Hatatani and S. Oda and Q. X. Zhao and M. Willander},
  title = {Study of Structural and Optical Properties of Nanocrystalline Silicon Embedded in SIO2},
  journal = {Thin Solid Films},
  year = 2000,
}

@article{CTT100444801,
  author = {SHUNRI ODA},
  title = {Silicon Nanodevices and Neosilicon},
  journal = {10th Seoul International Symposium on the Physics of Semiconductor and Applications-2000, Cheju},
  year = 2000,
}

@article{CTT100444802,
  author = {SHUNRI ODA},
  title = {Ballistic transport in silicon vertical transistors},
  journal = {4th International Workshop on Quantum Functional Devices, Kanazawa},
  year = 2000,
}

@article{CTT100444803,
  author = {B.J.Hinds and T.Yamanaka and S.Hatatani and S.Oda},
  title = {Charge Storage Mechanism in Nano-crystalline Si based Single-electron Memories},
  journal = {Materials Research Society 2000 Fall Meeting, Boston},
  year = 2000,
}

@article{CTT100444804,
  author = {J.Ohmachi and R.Nakamura and K.Nishiguchi and S.Oda},
  title = {Retardation in the Oxidation rate of Nanocrystalline Silicon Quantum  Dots},
  journal = {Materials Research Society 2000 Fall Meeting, Boston},
  year = 2000,
}

@article{CTT100444805,
  author = {K.Nishiguchi and S.Oda},
  title = {Fabrication and Characterization of Cold Electron Emitter based on Nanocrystalline Silicon Quantum Dots},
  journal = {Materials Research Society 2000 Fall Meeting, Boston},
  year = 2000,
}

@article{CTT100444806,
  author = {西口克彦 and 小田俊理},
  title = {シリコン縦型トランジスタによるバリスティック伝導の観測},
  journal = {第47回応用物理学関係連合講演会},
  year = 2000,
}

@article{CTT100444807,
  author = {Y. Feng and B. J. Hinds and A. Dutta and S. Hatatani and S. Oda},
  title = {Single electron memory from nano-crystalline Si dots fromed by the disproportiation reaction of silicon suboxide},
  journal = {第47回応用物理学関係連合講演会},
  year = 2000,
}

@article{CTT100444808,
  author = {B.J.Hinds and T.Yamanaka and S.Hatatani and S.Oda},
  title = {Lifetime Analysis of Single Electron Memory from Nano-crystalline Si Dots Floating-Gate over Nano-Scale Channel Transistor},
  journal = {第61回応用物理学会学術講演会},
  year = 2000,
}

@article{CTT100444809,
  author = {吉田征一郎 and 西口克彦 and 小田俊理},
  title = {シリコン量子ドットを用いた短チャネルスイッチング素子の提案},
  journal = {第61回応用物理学会学術講演会},
  year = 2000,
}

@article{CTT100444810,
  author = {山中崇行 and B.J.ハインズ and 畑谷成郎 and 小田俊理},
  title = {ナノ結晶シリコンを用いたナノチャネル単電子メモリの作製},
  journal = {第61回応用物理学会学術講演会},
  year = 2000,
}

@article{CTT100444811,
  author = {松川康成 and 下里圭司 and 服部健雄 and 小田俊理},
  title = {分光エリプソメトリによるMOCVD成長YBCO薄膜のその場観察(III）},
  journal = {第61回応用物理学会学術講演会},
  year = 2000,
}

@article{CTT100444812,
  author = {西口克彦 and 小田俊理},
  title = {セルフアライン・ダブルゲート単電子トランジスタの作製},
  journal = {第61回応用物理学会学術講演会},
  year = 2000,
}

@article{CTT100444813,
  author = {西口克彦 and 趙新為 and 小田俊理},
  title = {ナノクリスタルシリコンを用いた平面型電子放出素子の作製},
  journal = {第61回応用物理学会学術講演会},
  year = 2000,
}

@article{CTT100444617,
  author = {F. Yun and B. J. Hinds and S. Hatatani and S. Oda},
  title = {Room temperature single-electron narrow channel memory with silicon nanodots embedded in SiO2 matrix},
  journal = {Japanese Journal of Applied Physics},
  year = 2000,
}

@article{CTT100444616,
  author = {A. Dutta and S. Oda and Y. Fu and M. Willander},
  title = {Electron Transport in Nanocrystalline-Si Based Single Electron Transistors},
  journal = {Japanese Journal of Applied Physics},
  year = 2000,
}

@article{CTT100444612,
  author = {B. J. Hinds and K. Nishiguchi and A. Dutta and T. Yamanaka and S. Hatatani and S. Oda},
  title = {Two-Gate Transistor for the Study of Si/SiO2 Interface in SOI Nano-Channel and Nanocrystalline Si memory Device},
  journal = {Japanese Journal of Applied Physics},
  year = 2000,
}

@article{CTT100444611,
  author = {Z. Wang and S. Oda and M. Karlsteen and U. Sodervall and M. Willander},
  title = {Structure analysis of SrTiO3/BaTiO3 strained superlattice films prepared by atomic-layer metalorganic chemical vapor deposition},
  journal = {Japanese Journal of Applied Physics},
  year = 2000,
}

@article{CTT100444604,
  author = {S. Oda and D. F. Moore and W. I. Milne},
  title = {The nanostructuring of materials for device and sensor applications},
  journal = {IEE Engineering Science and Education Journal},
  year = 1999,
}

@article{CTT100423304,
  author = {A.Dutta and S.P.Lee and Sigeo HATATANI and Shunri ODA},
  title = {Silicon Based Single Electron Memory Using Multi-Tunnel Junction Fabricated by Electron Beam Direct  Writing},
  journal = {Applied Physics Letters},
  year = 1999,
}

@article{CTT100423306,
  author = {Shuichiro YAMAMOTO and Koji NAGATA and Satoshi SUGAI and Akio SENGOKU and Yasunari MATSUKAWA and Takeo HATTORI and Shunri ODA},
  title = {Reproducible Growth of Meralorganic Chemical Vapor Deposition Derived},
  journal = {Japanese Journal of Applied Physics},
  year = 1999,
}

@article{CTT100423307,
  author = {S.YAMAMOTO and S. SUGAI and Y. MATSUKAWA and A.SENGOKU and H.TOBISAKA and T.HATTORI and S.ODA},
  title = {In situ growth monitoring during metaloganic chemical vapor deposition of YBa2Cu3Ox thinfilms by spectroscopic ellipsometry},
  journal = {Japanese Journal if Applied Physics},
  year = 1999,
}

@article{CTT100423308,
  author = {S.YAMAMOTO and S.SUGAI and S.ODA},
  title = {In Situ process monitoring of MOCVD of superconducting and dielectric oxide},
  journal = {Journal de Physique IV},
  year = 1999,
}

@article{CTT100423309,
  author = {D.F.MOORE and W.I.MILNE and S.ODA},
  title = {Nanostructured materials and devices for sensor and electronic application},
  journal = {Power Engineering Journal},
  year = 1999,
}

@article{CTT100431641,
  author = {Zaiyang Wang and Tomohiko Yasuda and Shigeo Hatatani and Shunri Oda},
  title = {Enhanced Dielectric Properties in SrTiO3/BaTiO3 Strained Superlattice Structures Prepared by Atomic-Layer Metalorganic Chemical Vapor Deposition},
  journal = {Japanese Journal of Applied Physics},
  year = 1999,
}

@article{CTT100452649,
  author = {Shigeru SUZUKI and Satoshi SUGAI and Shunri ODA},
  title = {Electric Field-effect Enhancement by a Combination of Coplanar High-Tc Superconducting Devices with Step Edge Junctions},
  journal = {Japanese Journal of Applied Physics},
  year = 1998,
}

@article{CTT100452646,
  author = {M.Otobe and H.Yajima and S.Oda},
  title = {Observation of Single Electron Charging Effect in Nanocrystalline Silicon at Room Temperature Using Atomic Force Microscopy},
  journal = {Applied Physics Letters},
  year = 1998,
}

@article{CTT100452647,
  author = {S.Suzuki and H.Tobisaka and S.Oda},
  title = {Electric Properties of Coplanar High-Tc Superconducting Field-Effect Devices},
  journal = {Japanese Journal of Applied Physics},
  year = 1998,
}

@article{CTT100452648,
  author = {Z.Wang and S.Oda},
  title = {Atomic Layer-by-Layer Metal-Organic Chemical Vapor Deposition of SrTiO3 Films with a Very smooth Surface},
  journal = {Japanese Journal of Applied Physics},
  year = 1998,
}

@article{CTT100452638,
  author = {Toru Ifuku and Masanori Otobe and Akira Itoh and Shunri Oda},
  title = {Fabrication of Nanocrystalline Silicon with Small Spread of Particle Size by Pulsed Gas Plasma},
  journal = {Japanese Journal of Applied Physics},
  year = 1997,
}

@article{CTT100452639,
  author = {Amit Dutta and Masao Kimura and Yoshiaki Honda and Masanori Otobe Akira Itoh and Shunri Oda},
  title = {Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing},
  journal = {Japanese Journal of Applied Physics},
  year = 1997,
}

@article{CTT100452640,
  author = {Yoshihiko Kanemitsu and Shinji Okamoto and Masanori Otobe and Shunri Oda},
  title = {Photoluminescnce Mechanism in Surface-Oxidized Silicon Nanocrystals},
  journal = {Phys. Rev. B},
  year = 1997,
}

@article{CTT100452643,
  author = {S. Oda},
  title = {Preparation of Nanocrystalline Silicon Quantum Dot Structure by Pulsed Plasma Processes},
  journal = {Adv. Colloid Interface Sci.},
  year = 1997,
}

@article{CTT100452644,
  author = {Shigeru Suzuki and S.Oda},
  title = {Proposal of coplanar-type high-Tc superconducting field-effect devices},
  journal = {Physica C},
  year = 1997,
}

@article{CTT100452645,
  author = {S. Yamamoto and A. Kawaguchi and S. Oda},
  title = {Anomalous Current-Voltage Characteristics along the c-Axis in YBaCuO Thin Films Prepared by MOCVD and AFM Lithography},
  journal = {Physica C},
  year = 1997,
}

@article{CTT100452641,
  author = {田部道晴 and 小田俊理 and 平本俊郎 and 中里和郎 and 雨宮好仁},
  title = {単電子デバイス・回路の研究状況と今後の展望},
  journal = {応用物理},
  year = 1997,
}

@article{CTT100452635,
  author = {S. Yamamoto and T. Watanabe and S. Oda},
  title = {Junction Formation in YBaCuO Thin Films by Scanning Probe},
  journal = {J. Low. Temp. Phys},
  year = 1997,
}

@article{CTT100452636,
  author = {S. Yamamoto and A. Kawaguchi and K. Nagata and T. Hattori and S. Oda},
  title = {Atomic layer-by-layer epitaxy of oxide superconductors by MOCVD},
  journal = {Applied Surface Science},
  year = 1997,
}

@article{CTT100452642,
  author = {Akira Itoh and Toru Ifuku and Masanori Otobe and S.Oda},
  title = {Grain-Size Control of Nanocrystalline Silicon by Pulsed Gas Plasma Process},
  journal = {Materials Research Society Symposium Proceedings},
  year = 1997,
}

@article{CTT100452633,
  author = {M. Otobe and J. Kawahara and S. Oda},
  title = {Preferential Nucleation of Nanocrystalline Silicon along Microsteps},
  journal = {Japanese Journal of Applied Physics},
  year = 1996,
}

@article{CTT100452634,
  author = {M. Otobe and T. Kanai and T. Ifuku and H.Yajima and S. Oda},
  title = {Nanocrystalline silicon formation in a SiH4 plasma cell},
  journal = {Journal of Non-Crystalline Solids},
  year = 1996,
}

@article{CTT100452637,
  author = {S. Yamamoto and A. kawaguchi and S. Oda},
  title = {Preparation of Thin Films of YBa2Cu30x with a Smooth Surface by Atomic Layer MOCVD},
  journal = {Mat. Sci. Eng. B},
  year = 1996,
}

@article{CTT100452625,
  author = {T. Tsukui and S. Oda},
  title = {Computer Simulation and Measurement of Capacitance-Voltage Characteristics in Quantum Wire Devices of Trench-Oxide MOS Structure},
  journal = {Jpn. J. Appl. Phys.},
  year = 1995,
}

@article{CTT100452626,
  author = {S. Oda and M. Otobe},
  title = {Preparation of Nanocrystalline Silicon by Pulsed Plasma Processing},
  journal = {Mat. Res. Soc. Symp. Proc.},
  year = 1995,
}

@article{CTT100452628,
  author = {S. Oda and S. Yamamoto and H. Zama},
  title = {Superconductivity and Surface Morphology of YBCO Thin Films Prepared by Metalorganic Chemical Vapor Deposition},
  journal = {IEEE Transactions on Applied Superconductivity},
  year = 1995,
}

@article{CTT100452629,
  author = {M. Otobe and T. Kanai and S. Oda},
  title = {Farication of Nano-crystalline Si by SiH4 Plasma Cell},
  journal = {Mat. Res. Soc. Symp. Proc.},
  year = 1995,
}

@article{CTT100452630,
  author = {S. Oda and S. Yamamoto and A. Kawaguchi},
  title = {Atomic Layer-by-Layer MOCVD of Oxide Superconductors},
  journal = {Journal de Physique IV},
  year = 1995,
}

@article{CTT100452631,
  author = {小田俊理},
  title = {MOCVD法による酸化物超伝導薄膜のエピタキシャル成長},
  journal = {日本結晶成長学会誌},
  year = 1995,
}

@article{CTT100452621,
  author = {S. Oda},
  title = {Atomic Layer-by-Layer Metalorganic Chemical Vapor Deposition of YBa2Cu3Ox Thin Films},
  journal = {Electrotechnical Laboratory Bulletin of the Electrotechnical Laboratory},
  year = 1994,
}

@article{CTT100452620,
  author = {H. Zama and J. Saga and T. Hattori and S. Oda},
  title = {Superconducting Properties of Ultrathin Films of YBa2Cu3Ox Prepared by Metalorganic Chemical Vapor Deposition at 500℃},
  journal = {Jpn. J. Appl. Phys.},
  year = 1994,
}

@article{CTT100452622,
  author = {S.Oda and M.Kobayashi and H.Zama},
  title = {Preparation of Y-doped SrCuO2 Infinite Layer Films by MOCVD},
  journal = {Elsevier Physica C},
  year = 1994,
}

@article{CTT100452627,
  author = {S.Oda and M.Kobayashi and H.Zama},
  title = {Preparation of Y-doped SrCuO┣D22┫D2 Infinite Layer Films by MOCVD},
  journal = {Physica C},
  year = 1994,
}

@article{CTT100452624,
  author = {S. Oda and H. Zama and S. Yamamoto},
  title = {Atomic Layer Controlled Metalorganic Chemical Vapor Deposition of Superconducting YBa┣D22┫D2Cu┣D23┫D2Ox Films},
  journal = {Journal of Crystal Growth},
  year = 1994,
}

@article{CTT100452618,
  author = {S. Oda and K. Sakai and H. Zama},
  title = {Staircase-like Structures in In Situ Optical Reflectance Measurement as an Evidence for Two-Dimensional Crystal Growth in Layer-by-Layer Chemical Vapor Deposition of YBa2Cu2Ox},
  journal = {Applied Surface Science},
  year = 1994,
}

@article{CTT100431532,
  author = {S. Oda},
  title = {(Frequency effects in Processing plasmas of the VHF band)},
  journal = {Plasma Sources Sci Technol},
  year = 1993,
}

@article{CTT100431531,
  author = {T. Tsukui and S. Oda},
  title = {(Proposal of Trench-Oxide Metal-Oxide-Semiconductor Structure and Computer Simulation of Silicon Quantum-Wire Characteristics)},
  journal = {Jpn J Appl Phys},
  year = 1993,
}

@article{CTT100452606,
  author = {S. Oda and H. Zama and K. Fujii and K. Sakai and Y.C. Chen},
  title = {Self-limiting adsorption and in situ optical monitoring for atomic layer epitaxy of oxide superconductors},
  journal = {Thin Solid Films},
  year = 1993,
}

@article{CTT100452607,
  author = {K. Sakai and H. Zama and S. Oda},
  title = {(In Situ Optical Monitoring of Two-Dimensional Crystal Growth in Layer-by-Layer Chemical Vapor Deposition of YBa┣D22┫D2Cu┣D23┫D2Ox)},
  journal = {Jpn J Appl Phys},
  year = 1993,
}

@article{CTT100452608,
  author = {小田俊理},
  title = {Layer-by-Layer Growth and In Situ Optical Monitaring in CVD of oxide superconductors},
  journal = {Solid State Physics},
  year = 1993,
}

@article{CTT100452609,
  author = {小田俊理},
  title = {Prospects for Semiconductor Integrated Circuit},
  journal = {Electrochemical Society of Japan},
  year = 1993,
}

@article{CTT100452610,
  author = {M. Otobe and S. Oda},
  title = {(The role of hydrogen radicals in nucleation and growth of nanocrystalline silicon)},
  journal = {(Journal of Non-Crystalline Solids)},
  year = 1993,
}

@article{CTT100431529,
  author = {H. Zama and T. Miyake and T. Hattori and S. Oda},
  title = {Preparation and Characterization of YBaCuO Superconducting Films by Low-Temperature Chemical Vapor Deposition Using β-Diketonate Complex and N┣D22┫D2O},
  journal = {Jpn J Appl Phys},
  year = 1992,
}

@article{CTT100452604,
  author = {H. Zama and K. Sakai and S. Oda},
  title = {In Situ Monitoring of Optical Reflectance Oscillation in Layer-by-Layer Chemical Vapor Deposition of Oxide Superconductor Films},
  journal = {Jpn J Appl Phys},
  year = 1992,
}

@article{CTT100442596,
  author = {M. Otobe and S. Oda},
  title = {Preparation of Microcrystalline Silicon Films by Very-High-Frequency Digital Chemical Vapor Deposition},
  journal = {Japanese Journal of Applied Physics},
  year = 1992,
}

@article{CTT100452603,
  author = {K. Fujii and H. Zama and S. Oda},
  title = {(Preparation of YBa┣D22┫D2Cu┣D23┫D2Ox Thin Films by Layer-by-Layer Metalorganic Chemical Vapor Deposition)},
  journal = {Jpn J Appl Phys},
  year = 1992,
}

@article{CTT100452602,
  author = {H. Zama and T. MIiyake and T. Hattori and S. Oda},
  title = {(Preparation of Highly Oriented Copper Films by Photo-Assisted Chemical Vapor Deposition Using β-Diketonate Complex)},
  journal = {Jpn J Appl Phys},
  year = 1992,
}

@article{CTT100452601,
  author = {M. Otobe and S. Oda},
  title = {(Role of Hydrogen Radical Treatment in Nucleation of Nanocrystalline Silicon)},
  journal = {Jpn J Appl Phys},
  year = 1992,
}

@article{CTT100452600,
  author = {M. Otobe and S. Oda},
  title = {(Growth Mechanism of Microcrystalline Silicon Prepared by Alternating Deposition of Amorphous Silicon and Hydrogen Radical Annealing)},
  journal = {Jpn J Appl Phys},
  year = 1992,
}

@article{CTT100442598,
  author = {S. Oda and H. Zama and K. Masuda and K. Fujii and Y.C. Chen},
  title = {Selflimiting Adsorption of Precursors for Chemical Vapor Deposition of Oxide Supercondductors},
  journal = {Physica C},
  year = 1991,
}

@article{CTT100442597,
  author = {S. Oda and M. Yasukawa},
  title = {High Quality a-Si : H and Interfaces Prepared by VHF Plasma CVD},
  journal = {J. Non-Crystalline Solids},
  year = 1991,
}

@article{CTT100442600,
  author = {K. Shimizu and S. Oda and M. Matsumura},
  title = {Fabrication of nanostructure by anisotropic wet etching of silicon},
  journal = {Japanese Journal of Applied Physics},
  year = 1989,
}

@article{CTT100442599,
  author = {S. Oda and H. Zama and T. Ohtsuka and K. Sugiyama and T. Hattori},
  title = {Epitaxial growth of YBaCuO films on sapphire at 500℃ by metalorganic chemical vapor deposition},
  journal = {Japanese Journal of Applied Physics},
  year = 1989,
}

@article{CTT100442602,
  author = {S. Oda and R. Kawase and T. Sato and I.Shimizu and H. Kokado},
  title = {Hydrogen radical assisted chemical vapor deposition of AnSe},
  journal = {Applied Physics Letters},
  year = 1986,
}

@article{CTT100442601,
  author = {S. Oda and S. Ishihara and N. Shibata and H. Shirai and A. Miyauchi and K. Fukuda and A. Tanabe and H. Ohtoshi and J. Hanna and I. Shimizu},
  title = {The role of hydrogen radicals in the growth of a-Si and related alloys},
  journal = {Japanese Journal of Applied Physics},
  year = 1986,
}

@article{CTT100452598,
  author = {S. Oda and Y. Saitoh and I. Shimizu and E. Inoue},
  title = {Electrophotographic studies of glow-discharge amorphous silicon},
  journal = {Philosophical Magazine},
  year = 1981,
}

@article{CTT100442603,
  author = {S. Oda and K. Saito and H. Tomita and I. Shimizu and E. Inoue},
  title = {The role of the blocking structure in a-Si : H vidicon target},
  journal = {Journal of Applied Physics},
  year = 1981,
}

@article{CTT100452599,
  author = {H. Katayama and S. Oda and H. Kukimoto},
  title = {ZnS blue-light-emitting diodes with an external quantum efficiency of 5x10┣D1-4┫D1},
  journal = {Applied Physics Letters},
  year = 1975,
}

@inproceedings{CTT100843508,
  author = {Takahiro Matsuzaki and Takamasa Kawanago and SHUNRI ODA},
  title = {Impact of Contact Doping on Electrical Characteristics in WSe2 FET},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100822658,
  author = {松﨑貴広 and 大場智昭 and 川那子高暢 and 小田俊理},
  title = {PVAによるMoS2FETへのキャリアドーピングと電気特性への影響},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100779837,
  author = {Tomoaki Oba and Takamasa Kawanago and Shunri Oda},
  title = {Gated Four-Probe Method for Evaluation of Electrical Characteristics in MoS2 Field-Effect Transistors},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779834,
  author = {大場智昭 and 川那子高暢 and 小田俊理},
  title = {ゲート付き4 端子法によるMoS2 FET の電気特性評価},
  booktitle = {第79回応用物理学会秋季学術講演会 講演予稿集},
  year = 2018,
}

@inproceedings{CTT100792144,
  author = {米田淳 and 武田健太 and 大塚朋廣 and 中島峻 and Matthieu R. Delbecq and Giles Allison and 本田拓夢 and 小寺哲夫 and 小田俊理 and 星裕介 and 宇佐美徳隆 and 伊藤公平 and 樽茶清悟},
  title = {同位体制御Si/SiGe単一電子スピンの1/f電荷揺らぎによる位相雑音},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100737117,
  author = {島⾕直樹 and ⼭岡裕 and ⽯原良⼀ and Aleksey Andreev and David Williams and ⼩⽥俊理 and ⼩寺哲夫},
  title = {シリコン量⼦ドットにおける正孔輸送特性の温度依存性},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100737112,
  author = {⼭岡裕 and 岩崎⼀真 and ⼩⽥俊理 and ⼩寺哲夫},
  title = {スピン軌道相互作⽤量⼦ビットに向けたpチャネルシリコン量子ドットの正孔スピン輸送特性},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100737113,
  author = {川那⼦⾼暢 and 居駒遼 and Du Wanjing and ⼩⽥俊理},
  title = {⾃⼰組織化単分⼦膜を⽤いたadhesion lithographyによるMoS2 FETの作製},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100734161,
  author = {S. Oda},
  title = {Coupled Quantum Dots on SOI as Highly Integrated Si Qubits},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100734160,
  author = {S. Oda},
  title = {Silicon device technology for intelligent communications},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100734159,
  author = {Y. Shimamoto and T. Suto and H. Ozawa and M. Hatano and S.Oda and T. Iwasaki},
  title = {Very Narrow Linewidths in the Fluorescence from Germanium-Vacancy Centers in Nanodiamonds},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100734157,
  author = {T. Kawanago and S. Oda},
  title = {Self-Assembled Monolayer-Based Gate Dielectrics for MoS2 FETs},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100711241,
  author = {野口 智弘 and Simanullang Marolop and 宇佐美 浩一 and 小寺 哲夫 and 小田 俊理},
  title = {Ge/Si コアシェル ナノワイヤの電気伝導率における径依存性},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100711246,
  author = {前川 未知瑠 and テノリオぺルル ハイメ and ヘルブスレブ エルンスト and 山岡 裕 and 小寺 哲夫 and 小田 俊理},
  title = {シリコン量子ドットにおける表面酸化膜中電荷のコヒーレンス効果},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100756054,
  author = {河野行雄 and 居駒遼 and 川那子高暢 and 小田俊理},
  title = {ジデシルホスホン酸(C12H25-PA)をゲート絶縁膜の用いたMoS2 FETの作製},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100723180,
  author = {島本祐輔 and 須藤建瑠 and 波多野睦子 and 小田俊理 and 岩崎孝之},
  title = {ナノダイヤモンド中に形成したGeVセンターからの単一光子放出},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100711237,
  author = {鈴木 大地 and 小田 俊理 and 河野 行雄},
  title = {光熱起電力を用いたテラヘルツ帯検出器の熱解析及びイメージング応用},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100711238,
  author = {落合 雄輝 and 鈴木 大地 and 小田 俊理 and 河野 行雄},
  title = {単層カーボンナノチューブフィルムを用いたテラヘルツ波検出器における熱電効果の向上},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100711240,
  author = {山岡 裕 and 岩崎 一真 and 小田 俊理 and 小寺 哲夫},
  title = {p型シリコン2重量子ドットにおけるパウリスピンブロッケード領域内漏れ電流の磁場依存性},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100711242,
  author = {高木 寛之 and 野口 智弘 and Simanullang Marolop and 宇佐美 浩一 and 小寺 哲夫 and 小田 俊理},
  title = {低温下におけるGe/Si コアシェルナノワイヤの電気特性評価},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100711244,
  author = {平岡 宗一郎 and 堀部 浩介 and 小寺 哲夫 and 小田 俊理},
  title = {シリコン3重量子ドットの等価回路シミュレーション},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100711245,
  author = {杜 婉静 and 川那子 高暢 and 小田 俊理},
  title = {Multifunctional Phosphonic Acid Self-Assembled Monolayer for Metal Patterning},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100701253,
  author = {川那子 高暢 and 小田 俊理},
  title = {自己組織化単分子膜をゲート絶縁膜に用いた低電圧駆動MoS2 FETの作製},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100703905,
  author = {Tomohiro  Otsuka and Kenta Takeda and Jun Yoneda and Takumu Honda and Matthieu R. Delbecq and Giles Allison and Marian Marx and Takashi Nakajima and Tetsuo Kodera and Shunri Oda and Yusuke Hoshi and Noritaka Usami and Kohei M. Itoh and Seigo Tarucha},
  title = {Measurement of charge states in Si/SiGe multiple quantum dots},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100705462,
  author = {Jaime Oscar Tenorio-Pearl and Ernst David Herbschleb and Celestino and Alex  Chin Creatore and Shunri Oda},
  title = {Coherent control of trapped-charge induced resonances in a field-effect transistor},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100703909,
  author = {K. Takeda and J. Kamioka and J. Yoneda and T. Otsuka and M. R. Delbecq and G. Allison and T. Nakajima and T. Kodera and S. Oda and S. Tarucha},
  title = {AC Stark effect and optimal control of a strongly driven Si/SiGe quantum dot spin qubit},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100705463,
  author = {Marolop Dapot Krisman Simanullang and Gde Bimananda Mahardika Wisna and Koichi Usami and Wei Cao and Kaustav Banerjee and Shunri Oda},
  title = {Electrical characterization of back-gated and top-gated germanium-core/silicon-shell nanowire field-effect transistors},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100705372,
  author = {S. Oda},
  title = {Silicon device technology for intelligent communications},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100705374,
  author = {Shunri Oda},
  title = {Silicon quantum dots for future electronics and photonics},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100701254,
  author = {山岡 裕 and 小田 俊理 and 小寺 哲夫},
  title = {高濃度ドーピングしたシリコンを用いた単一量子ドットの正孔輸送特性},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100701263,
  author = {本田 拓夢 and 米田 淳 and 武田 健太 and 川那子 高暢 and 小寺 哲夫 and 樽茶 清悟 and 小田 俊理},
  title = {多層Al ゲート構造を用いたSi-MOS 量子ドットデバイス作製プロセスの検討},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100701261,
  author = {前川 未知瑠 and テノリオペルル ハイメ and ヘルブスレブ エルンスト and 山岡 裕 and 小寺 哲夫 and 小田 俊理},
  title = {極低温下連続マイクロ波照射下での単一量子ドットの電子輸送特性},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100701262,
  author = {野口 智弘 and シマヌラン マロロップ ダポット クリスマン and Koichi Usami and 小寺 哲夫 and 小田 俊理},
  title = {Ge/Si コアシェル ナノワイヤの熱電性能測定},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100701255,
  author = {堀部 浩介 and 小寺 哲夫 and 小田 俊理},
  title = {【第7回シリコンテクノロジー分科会論文賞受賞記念講演】 スピン量子デバイスに向けた少数電子シリコン量子ドットの研究},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100701258,
  author = {西野 孝夫 and 平岡 宗一郎 and 井原 敏 and 小寺 哲夫 and 小田 俊理},
  title = {極薄膜SOIを用いた量子ドットデバイスの作製と評価},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100701257,
  author = {島本 祐輔 and 岩崎 孝之 and 須藤 健瑠 and 波多野 睦子 and 小田 俊理},
  title = {ダイヤモンド粒子中に形成したGeVセンターの発光特性},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100701256,
  author = {岩崎 一真 and 小寺 哲夫 and 小田 俊理},
  title = {P型Si二重量子ドット内の少数正孔領域でのパウリスピンブロッケードの観測},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100734092,
  author = {S. Hiraoka and S. Oda},
  title = {Electrical Properties and Equivalent-Circuit Model of Physically-Defined Silicon Triple Quantum Dots Charged with Few Electrons},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100705467,
  author = {S. Oda},
  title = {Quantum dot devices: technology vehicles for nanoscale physics and paths for future applications},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100705466,
  author = {Daichi Suzuki and Shunri Oda and Yukio Kawano},
  title = {A Wide Band And Flexible Terahertz Detector With Carbon Nanotubes},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100705465,
  author = {Takashi Iguchi and Satoshi Ihara and Shunri Oda and Yukio Kawano},
  title = {Silicon Terahertz Plasmonic Antenna},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100705464,
  author = {Xiangying Deng and Shunri Oda and Yukio Kawano},
  title = {Split-joint Bull''s Eye Structure With Aperture Optimization For Multi-frequency Terahertz Plasmonic Antennas},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100705455,
  author = {Michiru Maekawa and Jaime Tenorio-Pearl and Ernst Herbschleb and Yu Yamaoka and Tetsuo Kodera and Shunri Oda},
  title = {Controlling the asymmetric line-shape of charge-trapped induced resonances in a single quantum dot},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100699709,
  author = {Marolop Simanullang and G. Bimananda M. Wisna and Tomohiro Noguchi and Koichi Usami and Shunri Oda},
  title = {Synthesis of Ge-core/Si-shell Nanowires with Conformal Shell Thickness Deposited after Au Removal},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100703793,
  author = {T. Kodera and K. Horibe and S. Oda},
  title = {(Keynote) Devices Architectures and Technology for Quantum Computing},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100722239,
  author = {野口智弘 and 森田広大 and Simanullang Marolop and 宇佐美浩一 and 小寺哲夫 and 小田俊理},
  title = {ナノツリーを抑制したGe/Si コアシェル ナノワイヤの熱電性能測定},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100703795,
  author = {武田健太 and 神岡純 and 小幡利顕 and 大塚朋廣 and 中島峻 and Matthieu Delbecq and 天羽真一 and 米田淳 and Giles Alison and 野入亮人 and 菅原烈 and 小寺哲夫 and 小田俊理 and 樽茶清悟},
  title = {Si2重量子ドット中の単一電子スピンの高速独立操作},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100711234,
  author = {岩崎 一真 and 小寺 哲夫 and 小田 俊理},
  title = {シリコン２重量子ドットにおける正孔輸送特性},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100715071,
  author = {T. Ferrus and T.-Y. Yang and Y. Yamaoka and T. Kambara and S. Oda and T. Kodera and D. Williams},
  title = {Wireless manipulation of quantum states in silicon isolated double quantum dots},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100702091,
  author = {S. Oda},
  title = {Silicon device technology for intelligent communications},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100711233,
  author = {山岡 裕 and 小田 俊理 and 小寺 哲夫},
  title = {高濃度ドーピングしたシリコンを用いた2重量子ドットの電子輸送特},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100701962,
  author = {S. Oda},
  title = {Silicon nanocrystals for future},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100722223,
  author = {米田淳 and 本田拓夢 and 武田健太 and Marian Marx and 大塚朋廣 and 中島峻 and Matthieu Delbecq and 天羽真一 and Giles Allison and 小寺哲夫 and 小田俊理 and 樽茶清悟},
  title = {電極閉じ込め型シリコンMOS量子ドットの作製と評価},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100722236,
  author = {国崎愛子 and ムルガナタンマノハラン and 水田博 and 小田俊理 and 岩崎孝之 and 波多野睦子 and 小寺哲夫},
  title = {ダイヤモンド中の単一複合欠陥の探索に向けたスピン状態に関する第一原理計算},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100722232,
  author = {平岡宗一郎 and 堀部浩介 and 小寺哲夫 and 小田俊理},
  title = {サイドゲートによるシリコン3重量子ドットの単電子移動制御},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100722237,
  author = {本田拓夢 and 米田淳 and 武田健太 and 小寺哲夫 and 樽茶清悟 and 小田俊理},
  title = {Si-MOS構造を有する多重量子ドットデバイスの特性評価},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100719815,
  author = {T. Ferrus and T.-Y. Yang and Y. Yamaoka and T. Kambara and S. Oda and T. Kodera and D. Williams},
  title = {Wireless manipulation of quantum states in silicon isolated double quantum dots},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721755,
  author = {T.-Y. Yang and Y. Yamaoka and A. Andreev and T. Ferrus and D. A. Williams and T. Kodera and S. Oda},
  title = {Detection of electronic states in doped silicon double quantum dot},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721758,
  author = {T. Kodera and K. Horibe and K. Yamada and S. Ihara and T. Kambara and A. Andreev and D. A. Williams and Y. Arakawa and S. Oda},
  title = {Physically-defined quantum dots fabricated on silicon-on-insulator substrate},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100702093,
  author = {J. Yoneda and T. Honda and K. Takeda and M. Marx and T. Otsuka and T.Nakajima and M. R. Delbecq and S. Amaha and G. Allison and T. Kodera and S. Oda and S. Tarucha},
  title = {Fabrication and characterization of gate-defined small Si-MOS quantum dot devices},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100703792,
  author = {M.Marx and K. Takeda and J. Yoneda and G. Allison and T. Honda and M. Delbecq and T.Otsuka and T.Nakajima and S. Amaha and T. Kodera and S. Oda and S.Tarucha},
  title = {Increasing valley-splitting in Si/SiGe quantum dots},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721765,
  author = {K. Takeda and J. Kamioka and T. Obata and T. Otsuka and T. Nakajima and M. R. Delbecq and S. Amaha and J. Yoneda and G. Allison and A. Noiri and R. Sugawara and T. Kodera and S. Oda and S. Tarucha},
  title = {Fast addressable single-spin qubits in a Si/SiGe double quantum dot with a micro-magnet},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100702094,
  author = {K. Takeda and J. Kamioka and T. Obata and T. Otsuka and T. Nakajima and M. R. Delbecq and S. Amaha and J. Yoneda and A. Noiri and R. Sugawara and T. Kodera and S. Oda and S. Tarucha},
  title = {A strongly driven single-spin qubit},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100715083,
  author = {T. Ferrus and T.-Y. Yang and Y. Yamaoka and T. Kambara and S. Oda and T. Kodera and D. Williams},
  title = {Charge Qubits in Doped Quantum Dots : Effects on Computation and Coherence},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100719792,
  author = {S. Hiraoka and K. Horibe and R. Mizokuchi and T. Kodera and S. Oda},
  title = {Physically-defined silicon triple quantum dots in metal-oxide-semiconductor structures},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100719828,
  author = {Y. Yamaoka and S. Oda and T. Kodera},
  title = {Characterization of physically-defined double quantum dots on highly-doped silicon substrate},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721775,
  author = {S. Hiraoka and K. Horibe and T. Kodera and S. Oda},
  title = {Physically-Defined Few-Electron Triple Quantum Dots in Metal-Oxide-Semiconductor Structures},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721781,
  author = {K. Horibe and K. Yamada and T. Kodera and S. Oda},
  title = {Few-Electron and Few-Hole Regimes in Silicon Double Quantum Dots},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721378,
  author = {S. Ihara and A. Andreev and D. A. Williams and T. Kodera and S. Oda},
  title = {Integration of Quantum Dots on Ultrathin Silicon-on-Insulator Film},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721375,
  author = {T. Ferrus and T.-Y. Yang and Y. Yamaoka and T. Kambara and S. Oda and T. Kodera and D. Williams},
  title = {Wireless manipulation of quantum states in silicon isolated double quantum dots},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721371,
  author = {T. Noguchi and koudai morita and M. Simanullang and K. Usami and T. Kodera and S. Oda},
  title = {Transport and thermoelectric properties in Ge/Si core/shell nanowires},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721368,
  author = {T. Noguchi and M. Simanullang and Z. Xu and K. Usami and Yukio Kawano and T. Kodera and S. Oda},
  title = {A Ge/Si core/shell nanowire with controlled low temperature grown Si shell thickness},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100702095,
  author = {K. Iwasaki and T. Kodera and S. Oda},
  title = {Charge sensing of p-channel double quantum dots fabricated on (110) silicon substrate},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100703794,
  author = {Y. Yamaoka and T. Kodera and S. Oda},
  title = {Fabrication and characterization of physically-defined double quantum dots without unintentional localized states on highly-doped silicon substrate},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100702096,
  author = {T. Honda and J. Yoneda and K. Takeda and T. Kodera and S. Tarucha and S. Oda},
  title = {Fabrication of a highly controllable Si-MOS quantum dot device},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100703796,
  author = {T. Noguchi and K. Morita and M. Simanullang and Z. Xu and K. Usami and T. Kodera and S. Oda},
  title = {Fabrication and Thermo-electric Properties of Ge/Si Core/Shell Nanowires},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100703798,
  author = {T. Honda and K. Horibe and R. Mizokuchi and Lu Yi and K. Iwasaki and S. Hiraoka and T.Kodera and S. Oda},
  title = {Coupled quantum dot devices},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100703797,
  author = {S. Yamazaki and K. Ikemoto and Y. Shimamoto and S. Oda},
  title = {Fabrication of silicon nanocrystals by VHF plasma processes},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100685340,
  author = {堀部 浩介 and 小寺 哲夫 and 小田 俊理},
  title = {リソグラフィにより形成されたシリコン2重結合量子ドット内の電子スピン状態のパルス測定},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100685338,
  author = {藤村 直紀 and 石川 昴 and 陸 昴義 and 小田 俊理 and 河野 行雄},
  title = {近接場光顕微鏡を用いた中赤外ログスパイラルアンテナの解析},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100685341,
  author = {野口 智弘 and 森田 広大 and Simanullang Marolop and Xu Zhengyu and 宇佐美 浩一 and 河野 行雄 and 小寺 哲夫 and 小田 俊理},
  title = {コアシェルナノワイヤ作製に向けたナノワイヤ形状に対するSiシェル膜厚依存性の観測},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100685339,
  author = {本田 拓夢 and 小寺 哲夫 and 米田 淳 and 武田 健太 and 樽茶 清悟 and 小田 俊理},
  title = {ゲート制御性を向上したSi-MOS量子ドットデバイスの作製と評価},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100702669,
  author = {Tetsuo Kodera and Kosuke Horibe and Shunri Oda},
  title = {Devices Architectures andTechnology for Quantum Computing},
  booktitle = {ECS Transactions},
  year = 2015,
}

@inproceedings{CTT100685347,
  author = {Kenta Takeda and Jun Kamioka and Toshiaki Obata and Tomohiro Otsuka and Takashi Nakajima and Matthieu Delbecq and Shinichi Amaha and Jun Yoneda and Akito Noiri and Retsu Sugawara and Tetsuo Kodera and Shunri Oda and Seigo Tarucha},
  title = {Single-electron spin resonance in a Si/SiGe double quantum dot with a micromagnet},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100685342,
  author = {森田 広大 and 野口 智弘 and 宇佐美 浩一 and SIMANULLANGMAROLOP and 河野 行雄 and 小寺 哲夫 and 小田 俊理},
  title = {Ge/Si コアシェルナノワイヤの熱電特性評価},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100677528,
  author = {S. Oda},
  title = {Silicon quantum dots for future electronics and photonics},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100677521,
  author = {S. Oda},
  title = {Silicon quantum dot devices for future electronics},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100849431,
  author = {T. Kodera and K. Horibe and T. Kambara and K. Yamada and R. Mizokuchi and Y. Lu and S. Ihara and S. Oda},
  title = {Silicon quantum dot devices using metal-insulator-semiconductor structures},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100677520,
  author = {S. Oda},
  title = {Change the future through the strong collaborations among our society},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100677550,
  author = {井原敏 and 小田俊理 and 河野行雄},
  title = {FDTD法によるテラヘルツ帯プラズモニックアンテナの小型化検討},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100677549,
  author = {平野智之 and 鈴木大地 and 小田俊理 and 河野行雄},
  title = {GaAs/AlGaAsを用いたテラヘルツ帯チューナブル検出素子のゲート電圧による出力変調とキャリア緩和過程},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100677548,
  author = {山崎将太郎 and 舩木健伍 and 宇佐美浩一 and 河野行雄 and 小田俊理},
  title = {電気泳動を用いたディップコーティング法によるシリコンナノ結晶の配列制御},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100677547,
  author = {舩木健伍 and 山崎将太郎 and 宇佐美浩一 and 河野行雄 and 野崎智洋 and 小田俊理},
  title = {表面修飾したシリコンナノ結晶とP3HTの複合体における光伝導特性評価},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100677546,
  author = {本田拓夢 and 武田健太 and 神岡純 and 米田淳 and Marian Marx and 小寺哲夫 and 樽茶清悟 and 小田俊理},
  title = {アンドープ基板を用いたSi/SiGe量子ドットデバイスのノイズ評価},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100677545,
  author = {野口智弘 and 森田広大 and Marolop Simanullang and Zhengyu Xu and 宇佐美浩一 and 河野行雄 and 小寺哲夫 and 小田俊理},
  title = {ナノツリーの発生を抑制したGe/Siコアシェルナノワイヤ成長},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100677543,
  author = {呂逸 and 堀部浩介 and 小寺哲夫 and 小田俊理},
  title = {2つのシリコン2重量子ドットデバイス間の静電結合観測},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100677542,
  author = {堀部浩介 and 小寺哲夫 and 小田俊理},
  title = {チャージセンサを用いた2重結合シリコン量子ドット内のスピンブロッケード現象の観測},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100677519,
  author = {Keiki Fukumoto and Yuuki Yamada and Takashi Matsuki and Ken Onda and Tomohiro Noguchi and Raisei Mizokuchi and Shunri Oda and Shin-ya Koshihara},
  title = {Visualization of ultrafast electron dynamics using time-resolved photoemission electron microscopy},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100721789,
  author = {R. Mizokuchi and T. Kodera and K. Horibe and S. Oda},
  title = {Perpendicular Magnetic Field Dependence of Triangular Triple Silicon Quantum Dot System},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100721790,
  author = {T. Ferrus and A. Rossi and T. Kodera and T. Kambara and S. Oda and D.A. Williams},
  title = {Manipulation of Silicon Quantum Dots and Isolated Structures using GHz Photons},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100681288,
  author = {T. Kodera and K. Yamada and K. Horibe and T. Kambara and S. Oda},
  title = {Fabrication and characterization of silicon double quantum dots in n-MOS and p-MOS structures},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100677517,
  author = {S. Oda},
  title = {Silicon quantum dot devices for future electronics},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100677518,
  author = {Yi Ro and Tetsuo. Kodera and kousuke Horibe and Shunri Oda},
  title = {Fabrication of Si quantum dots using SF6 dry etching technique},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100681289,
  author = {T. Ferrus and A. Rossi and T. Kodera and T. Kambara and S. Das and T-Y. Yang and S. Oda and D. A. Williams},
  title = {Manipulating quantum states with GHz photons in silicon quantum dots and isolated structures},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100677516,
  author = {Ayse  Seyhan and Keiki  Fukumoto and Yuuki Yamada and Takashi  Matsuki and Ken  Onda and Shin-ya Koshihara and Yoshifumi  Nakamine and Kazufumi  Ikemoto and Kengo  Funaki and Shunri  Oda},
  title = {Direct Imaging of Carrier Dynamics in Si Nanocrystals by Using Femtosecond Time-Resolved Photoemission Electron Microscopy},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100677508,
  author = {S. Oda},
  title = {Si quantum dots and Si/Ge nanowires for future electronics and photonics},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100677530,
  author = {森田広大 and 野口智弘 and SIMANULLANGMAROLOP and 宇佐美浩一 and 小寺哲夫 and 小田俊理},
  title = {Ge/Si コアシェルナノワイヤとSiナノワイヤのヘテロ接合作製},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100677533,
  author = {高橋綱己 and 別府伸耕 and 陳君ろ and 小田俊理 and 内田建},
  title = {バルク／SOI FinFET の自己加熱およびアナログ特性の最適化},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100677551,
  author = {Marolop Simanullang and Kouichi Usami and Tetsuo Kodera and Yukio Kawano and Kaustav Banerjee and Shunri Oda},
  title = {Design of tunnel FET based on Ge nanowires},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100677534,
  author = {溝口来成 and 小寺哲夫 and 堀部浩介 and 小田俊理},
  title = {電荷センサを集積した三角形状三重量子ドット構造による電荷フラストレーション},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100677541,
  author = {新留彩 and 高橋綱己 and 小田俊理 and 内田建},
  title = {グラフェン抵抗変化型メモリの3端子動作に関する研究},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100677539,
  author = {神岡純 and 武田健太 and 小幡利顕 and 小寺哲夫 and 樽茶清悟 and 小田俊理},
  title = {Si/SiGe二重量子ドットによるパウリスピンブロッケードの観測},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100677538,
  author = {山田宏 and 小寺哲夫 and 蒲原知宏 and 堀部浩介 and 河野行雄 and 小田俊理},
  title = {ホール輸送によるp型二重結合量子ドットの磁場依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100677531,
  author = {蒲原知宏 and 小寺哲夫 and 小田俊理},
  title = {形状異方性を持つ強磁性体を用いた局所磁場によるシリコン量子ドット中の電子スピン共鳴法の検討},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100681286,
  author = {A. Andreev and T. Ferrus and S. Das and T. Yang and S. Ihara and D. Williams and A. Andreev and T. Ferrus and S. Das and T. Yang and T. Kodera and S. Ihara and K. Horibe and S. Oda and D. Williams},
  title = {Charge Manipulations in Si-Based Quantum Dot Qubit Devices with Single Electron Transistors: Theory and Experiment},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100677535,
  author = {呂逸 and 小寺哲夫 and 堀部浩介 and 小田俊理},
  title = {SF6ドライエッチングによるシリコン量子ドットの作製と評価},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100681291,
  author = {T. Kodera and T. Kambara and K. Yamada and K. Horibe and Y. Arakawa and S. Oda},
  title = {Silicon double quantum dots in metal-oxide-semiconductor structures},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100699768,
  author = {Marolop Simanullang and Kouichi Usami and Tomohiro Noguchi and Akhmadi Surawijaya and Tetsuo Kodera and Yukio Kawano and Shunri Oda},
  title = {Surface passivation of germanium nanowires using Al2O3 and HfO2 deposited via atomic layer deposition (ALD) technique},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659410,
  author = {S. Oda},
  title = {Silicon Quantum Dot Devices for Future Electron Devices},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664453,
  author = {陸昂義 and 神岡純 and 小寺哲夫 and 小田俊理 and 河野行雄},
  title = {広帯域アンテナを結合したシリコン量子ドットによるテラヘルツ波検出},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659899,
  author = {小幡利顕 and 武田健太 and J. Kierig and A. Wild and J. Sailer and 神岡純 and 小寺哲夫 and W. M. Akhtar and 小田俊理 and D. Bougeard and G. Abstreiter and 樽茶清悟},
  title = {同位体制御したSiを用いたSi/SiGeにおけるダブルドット},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664445,
  author = {S. Oda},
  title = {Silicon Quantum Dots for Future Nanoelectronics},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664443,
  author = {Aya Shindome and Tsunaki Takahashi and Shunri Oda and Ken Uchida},
  title = {Experimental Study on SET/RESET Conditions for Graphene ReRAM},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664442,
  author = {J.Kamioka and T.Kodera and T.Obata and K.Takeda and W.M.Akhtar and S.Tarucha and S.Oda},
  title = {Reduction of Charge Noise in Dual-Gate Si/SiGe Quantum Point Contact},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664439,
  author = {K.Ikemoto and Y.Nakamine and Y.Kawano and S.Oda},
  title = {In-Situ Monitoring of Silicon Nanocrystal Deposition with Pulsed SiH<sub>4</sub> Supply by Optical Emission Spectroscopy of Ar Plasma},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659864,
  author = {T. Kodera and K. Horibe and T. Kambara and R. Mizokuchi and Y. Arakawa and S. Oda},
  title = {Lithographically- defined silicon quantum dots in a metal-oxide-semiconductor structure},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659870,
  author = {K. Horibe and T. Kodera and Y. Kawano and S. Oda},
  title = {Observation of back-action by a charge sensor in a silocon device},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659884,
  author = {R. Mizokuchi and T. Kodera and K. Horibe and Y. Arakawa and S. Oda},
  title = {Silicon triangular triple quantum dot with charge sensor},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664465,
  author = {高橋綱己 and 小田俊理 and 内田建},
  title = {熱特性モデル化による回路中のFinFET動作温度評価手法},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664464,
  author = {近藤信啓 and 舩木健伍 and 中峯嘉文 and 宇佐美浩一 and 小寺哲夫 and 河野行雄 and 小田俊理},
  title = {VHFプラズマにより作製したナノ結晶シリコン中のトラップの評価},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664463,
  author = {野口智弘 and 小寺哲夫 and 小路智也 and Simanullang Marolop and 宇佐美浩一 and 河野行雄 and 小田俊理},
  title = {微細径Ge/Siコアシェルナノワイヤの作製と評価},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664462,
  author = {黒澤裕也 and 角谷直哉 and 高橋綱己 and 大橋輝之 and 小田俊理 and 内田建},
  title = {不純物のイオン化エネルギー増大によるナノワイヤトランジスタの電気的特性に与える影響},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664461,
  author = {溝口来成 and 小寺哲夫 and 堀部浩介 and 河野行雄 and 荒川泰彦 and 小田俊理},
  title = {三角形状に配置したシリコン三重量子ドットのチャージセンシング},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664460,
  author = {堀部浩介 and 小寺哲夫 and 河野行雄 and 小田俊理},
  title = {チャージセンサのバックアクションによるシリコン量子ドット内電子励起の観測},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664458,
  author = {山田宏 and 小寺哲夫 and 蒲原知宏 and 河野行雄 and 小田俊理},
  title = {ホール輸送によるp型二重結合量子ドットの特性評価},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659891,
  author = {神岡純 and 小寺哲夫 and 武田健太 and 小幡利顕 and W. M. Akhtar and 樽茶清悟 and 小田俊理},
  title = {Si/SiGe系MOS構造量子ポイントコンタクトの特性評価},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664456,
  author = {池本和史 and 中峯嘉文 and 河野行雄 and 小田俊理},
  title = {SiH4パルス供給によるArプラズマ発光の増大と生成したシリコンナノ結晶の関係},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664455,
  author = {舩木健伍 and 近藤信啓 and 宇佐美浩一 and 小寺哲夫 and 河野行雄 and 野崎智洋 and 小田俊理},
  title = {シリコンナノ結晶とP3HTの複合体における光伝導特性評価},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664454,
  author = {新留彩 and 高橋綱己 and 小田俊理 and 内田建},
  title = {グラフェン抵抗変化型メモリのSET/RESET条件に関する研究},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664436,
  author = {K. Horibe and T. Kodera and S. Oda},
  title = {Direct measurement of the valley splitting in a few-electron silicon quantum dot using charge sensor source-drain bias spectroscopy},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664437,
  author = {T. Kodera and K. Horibe and Y. Arakawa and S. Oda},
  title = {Few-electron silicon single and double quantum dots fabricated in a metal-oxide-semiconductor structure},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659862,
  author = {T. Obata and K. Takeda and J. Kamioka and T. Kodera and W.M. Akhtar and K. Sawano and S. Oda},
  title = {Charge-Noise-Free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer” the 12th Asia Pacific Physics Conference (APPC12)},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654215,
  author = {SulthoniMuhammad Amin and 小寺哲夫 and 蒲原知宏 and 河野行雄 and 小田俊理},
  title = {単層ゲートによるシリコン2重量子ドット形成のシミュレーション},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658479,
  author = {小寺 哲夫 and 堀部 浩介 and 蒲原 知宏 and 山端 元音 and 内田 建 and 荒川 泰彦 and 小田 俊理},
  title = {電子スピン量子ビットに向けた少数電子シリコン量子ドットの実現},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654197,
  author = {堀部浩介 and 小寺哲夫 and 蒲原知宏 and 河野行雄 and 小田俊理},
  title = {チャージセンサによるシリコン2重結合量子ドットの少数電子状態観測},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654877,
  author = {T. Kodera and K. Horibe and T. Kambara and T. Sawada and K. Uchida and Y. Arakawa and S. Oda},
  title = {Fabrication and characterization of silicon quantum dots toward spin-based quantum information devices},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654876,
  author = {Akhmadi Surawijaya and Tetsuo Kodera and Yukio Kawano and Shunri Oda},
  title = {High Density Vertical Silicon Nanowires for Photodetector Applications},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654879,
  author = {T. Kambara and T. Kodera and S. Oda},
  title = {Multifunctional lithographically-defined Si quantum dots for spin qubits},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654884,
  author = {T. Kodera and T. Sawada and K. Horibe and T. Ferrus and D. Williams and M. Hatano and S. Oda},
  title = {Top-down and bottom-up silicon quantum dots for qubit application},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652933,
  author = {R. Mizokuchi and T. Kodera and K. Horibe and Y. Kawano and Y. Arakawa and S. Oda},
  title = {Observation of electron transitions in triple quantum dot by using charge sensor},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652934,
  author = {Satoshi Ihara and Tetsuo Kodera and Kosuke Horibe and Yukio Kawano and Ken Uchida and Shunri Oda},
  title = {Demonstration of large charging energy in quantum dots fabricated on ultrathin SOI},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652935,
  author = {Tomohiro Kambara and Tetsuo Kodera and Yukio Kawano and Yasuhiko Arakawa and Shunri Oda},
  title = {Micro magnets on lithographically-defined Si double quantum dots for electron spin resonance},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652936,
  author = {S. Oda},
  title = {NeoSilicon based nanoelectromechanical information devices},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652942,
  author = {S. Oda},
  title = {NeoSilicon based nanoelectromechanical information devices},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652957,
  author = {高橋綱己 and 別府伸耕 and 小田俊理 and 内田建},
  title = {熱配慮設計によるFinFETアナログ特性の最適化},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652958,
  author = {大橋輝之 and 小田俊理 and 内田建},
  title = {歪みによる電子移動度向上へMOS界面における変形ポテンシャル上昇が与える影響},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652959,
  author = {鈴木大地 and 小田俊理 and 河野行雄},
  title = {GaAs/AlGaAsを用いたテラヘルツ帯分光器のゲート電圧による出力変調},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652960,
  author = {新留 彩 and 別府伸耕 and 高橋綱己 and 小田俊理 and 内田 建},
  title = {架橋・非架橋構造のグラフェン抵抗変化型メモリの書込・消去特性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652965,
  author = {Daichi Suzuki and Shunri Oda and Yukio Kawano},
  title = {Gate-voltage tunable terahertz detection by a GaAs/AlGaAs quantum device},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652841,
  author = {S. Oda},
  title = {NeoSilicon based nanoelectromechanical information devices},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100653852,
  author = {小路智也 and 小寺哲夫 and 野口智弘 and 宇佐美浩一 and 河野行雄 and 小田俊理},
  title = {熱電変換素子に向けたGe/Si コアシェルナノワイヤの作製},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100653855,
  author = {溝口来成 and 小寺哲夫 and 堀部浩介 and 河野行雄 and 小田俊理},
  title = {三角形状に配置したシリコン三重量子ドットの電子輸送特性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100653711,
  author = {蒲原知宏 and 小寺哲夫 and 河野行雄 and 小田俊理},
  title = {微小磁性体電極集積によるシリコン2重結合量子ドットへの2軸磁場印加},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652852,
  author = {Tomohiro Noguchi and Tetsuo Kodera and Marolop Simanullang and Akhmadi Surawijaya and Koichi Usami and Yukio Kawano and Shunri Oda},
  title = {Fabrication and characterization of bottom-up Si Nanowire},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652855,
  author = {Tomoya Shoji and Tetsuo Kodera and Tomohiro Noguchi and Kouichi Usami and Yukio Kawano and Shunri Oda},
  title = {Fabrication of Ge/Si core/shell nanowires using size controlled Au nanoparticles as Vapor-Liquid-Solid growth catalysts},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652859,
  author = {Daichi Suzuki and Shunri Oda and Yukio Kawano},
  title = {Terahertz spectroscopic signal modulation by the gate voltage with a GaAs/AlGaAs field-effect transistor},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664448,
  author = {S. Oda},
  title = {Silicon Quantum Dot Devices for Future Electron Devices},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664457,
  author = {神岡純 and 小寺哲夫 and 武田健太 and 小幡利顕 and Waseem. M. Akhtar and 樽茶清悟 and 小田俊理},
  title = {Si/SiGe系MOS構造量子ポイントコンタクトの特性評価},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664468,
  author = {Yuuki Yamada and Takashi Matsuki and Keiki  Fukumoto and Ken Onda and Kazufumi Ikemoto and Kengo Funaki and Ayse Seyhan and Shunri Oda and Shin-ya Koshihara},
  title = {Imaging of the photo-carrier dynamics in a semiconductor by time-resolved photoemission electron microscopy},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100665472,
  author = {N. Fujimura and T. Kuga and J. M. Lloyd and T. Kodera and S. Oda and Y. Kawano},
  title = {Nanoscale Imaging by Scattering-type Scanning Near-Field Optical Microscopy with Infrared Light},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652860,
  author = {Nobuhiro Kondo and Shinya Ishii and Daichi Suzuki and Takayoshi Kuga and Shunri Oda and Yukio Kawano and Hiromichi Hoshina},
  title = {Terahertz camera imaging of crystalline polyhydroxybutyrates},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652863,
  author = {Takayoshi Kuga and Luca Crespi and Jun Kamioka and Daichi Suzuki and Tetsuo Kodera and Shunri Oda and Yukio Kawano},
  title = {Terahertz detection with antenna-coupled heavily P-doped Si quantum dots},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652864,
  author = {Teruyuki Ohashi and Shunri Oda and Ken Uchida},
  title = {Impact of Deformation Potential Increase at Si/SiO2 Interfaces on Stress-Induced Electron Mobility Enhancement in MOSFET},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652871,
  author = {A. Boudraa and A. Seyhan and Y. Nakamine and Y. Ogawa and F. Minami and Y. Kawano and S. Oda},
  title = {Surface Plasmon Enhanced Light Emission from Silicon Nanocrystals},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652872,
  author = {Jun Kamioka and Tetsuo Kodera and Toshiaki Obata and Kenta Takeda and Waseem. M. Akhtar and Seigo Tarucha and Shunri Oda},
  title = {Fabrication of MOS structure gate-defined Si/SiGe quantum dot device},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652876,
  author = {Ko Yamada and Tetsuo Kodera and Tomohiro Kambara and Yukio Kawano and Shunri Oda},
  title = {Observation of Few-Hole Regime throughp-channel Si Double Quantum Dots},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652878,
  author = {K. Horibe and T. Kodera and T. Kambara and Y. Kawano and S. Oda},
  title = {Two-electron silicon double quantum dots fabricated for spin-based qubit application},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652928,
  author = {Marolop Simanullang and T. Noguchi and Akhmadi Surawijaya and Koichi Usami and Tetsuo Kodera and Yukio Kawano and Shunri Oda},
  title = {Synthesis of Ge nanowires far below AuGe eutectic temperature, their characterisation and device fabrication},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658447,
  author = {T. Kodera and T. Sawada and S. Oda},
  title = {Transport properties of a single nanocrystalline silicon quantum dot between nanogap electrodes},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100655066,
  author = {Marolop Simanullang and Tomohiro. Noguchi and Akhmadi Surawijaya and Koichi Usami and Tetsuo Kodera and Yukio Kawano and Shunri. Oda},
  title = {Modulation of germanium nanowire diameter by controlling the growth temperature for device application},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100654202,
  author = {神岡 純 and 小寺哲夫 and 武田健太 and 小幡利顕 and 吉田勝治 and 樽茶清悟 and 小田俊理},
  title = {MOS構造gateを有するSi/SiGe量子ドットデバイスの作製},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100654203,
  author = {山田 宏 and 小寺哲夫 and 蒲原知宏 and 河野行雄 and 小田俊理},
  title = {ホール輸送によるp型量子ドットの作製と特性評価},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100655068,
  author = {T. Ohashi and T. Takahashi and T. Kodera and S. Oda and K. Uchida},
  title = {Experimental Observation of Record-high Electron Mobility of Greater than 1100 cm2V-1s-1 in Unstressed Si MOSFETs and Its Physical Mechanisms},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100654205,
  author = {小寺哲夫 and 溝口来成 and 林 久志 and 堀部浩介 and 蒲原知宏 and 荒川泰彦 and 小田俊理},
  title = {正三角形の頂点に配置したシリコン3重量子ドットの作製と特性評価},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100654206,
  author = {Marolop Simanullang and 野口智弘 and Akhmadi Surawijaya and 宇佐美浩一 and 小寺哲夫 and 河野行雄 and 小田俊理},
  title = {Low growth temperature of Ge NWs for electron device application},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100654192,
  author = {Jannatul Susoma and Yoshifumi Nakamine and Nobuhiro Kondo and Tetsuo Kodera and kouichi usami and Yukio Kawano and SHUNRI ODA},
  title = {Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High Performance Electron Device},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100654210,
  author = {近藤信啓 and 染野健 and 中峯嘉文 and 宇佐美浩一 and 小寺哲夫 and 河野行雄 and 小田俊理},
  title = {VHFプラズマにより作製したナノ結晶シリコンのフッ硝酸による粒径縮小},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100654196,
  author = {蒲原知宏 and 小寺哲夫 and 小田俊理},
  title = {バックゲートとソース/ドレイン電圧印加による各量子ドットの電気化学ポテンシャル制御},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100655071,
  author = {K. Takeda and Y. Fukuoka and T. Obata and J. Sailer and A. Wild and T. Kodera and K. Sawano and S. Oda and D. Bougeard and G. Abstreiter and S. Tarucha and Y Shiraki},
  title = {Charge noise characterization and reduction in Si/SiGe quantum devices},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100655073,
  author = {T. Ferrus and A. Rossi and T. Kodera and T. Kambara and W. Lin and S. Oda and D. Williams},
  title = {Microwave effects on silicon quantum dots},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100639110,
  author = {SHUNRI ODA},
  title = {Silicon quantum dots devices},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100639111,
  author = {SHUNRI ODA},
  title = {NeoSilicon based nanoelectromechanical information devices},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100639109,
  author = {SHUNRI ODA},
  title = {NeoSilicon based nanoelectromechanical information devices},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100664433,
  author = {Yoshifumi Nakamine and Jannatul Ferdous Susoma and Ran Zheng and Nobuhiro Kondo and Mohammad R. T. Mofrad and Michiel van der Zwan and Johan van der Cingel and Tetsuo Kodera and Yukio Kawano and Ken Uchida and Mutsuko Hatano and Ryoichi Ishihara and Shunri Oda},
  title = {Electrical and Optical Properties of Silicon Nanocrystals Prepared by Very High Frequency Plasma Deposition System},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100664434,
  author = {Marolop Simanullang and Ayse Seyhan and Koichi Usami and Tetsuo Kodera and Yukio Kawano and Shunri Oda},
  title = {Fabrication and characterization of Ge nanowires prepared at low temperatures by vapour-liquid-solid chemical vapour deposition},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100664435,
  author = {Tetsuo Kodera and kousuke Horibe and Tomohiro Kambara and Thierry Ferrus and Alessandro Rossi and Ken Uchida and David A. Williams and Yasuhiko Arakawa and Shunri Oda},
  title = {Silicon quantum dot devices toward electron spin quantum bits},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100658477,
  author = {Marolop Simanullang and Ayse Seyhan and Koichi Usami and Tetsuo Kodera and Yukio Kawano and Shunri Oda},
  title = {Low-temperature growth of Ge nanowires by vapor-liquid-solid chemical vapor deposition},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100636156,
  author = {Shunri Oda and Shaoyun Huang},
  title = {Silicon nanocrystal memory},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100635912,
  author = {小田俊理},
  title = {クロージングトーク},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100654211,
  author = {蒲原知宏 and 小寺哲夫 and T. Ferrus and A. Rossi and 堀部浩介 and 荒川泰彦 and D. Williams and 小田俊理},
  title = {シリコン２重結合量子ドットの少数電子領域観測へ向けた構造最適化の検討},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100654212,
  author = {福岡佑二 and 小寺哲夫 and 武田健太 and 小幡利顕 and 吉田勝治 and 澤野憲太郎 and 内田建 and 白木靖寛 and 樽茶清悟 and 小田俊理},
  title = {Capping gate構造を有するSi/SiGe量子ドットの作製と評価},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100654213,
  author = {澤田知孝 and 小寺哲夫 and 河野行雄 and 波多野睦子 and 小田俊理},
  title = {ナノギャップ電極とナノ結晶シリコン量子ドットの電子輸送特性},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100635543,
  author = {黒澤裕也 and 角谷直哉 and 高橋綱己 and 大橋輝之 and 小田俊理 and 内田 建},
  title = {ナノ薄膜SOI における不純物のイオン化エネルギー増大},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100654217,
  author = {小寺哲夫 and 堀部浩介 and 林文城 and 蒲原知宏 and T. Ferrus and A. Rossi and 内田建 and D. A. Williams and 荒川泰彦 and 小田俊理},
  title = {シリコン量子ドットを用いた電荷検出},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100635136,
  author = {Ian Robertson and Yasuko Yanagida and Shunri Oda},
  title = {Manifesting a 2D Layer of DNA Origami Tiles Using Base-Pair Shape Recognition},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100635539,
  author = {別府伸耕 and 小田俊理 and 内田 建},
  title = {AC コンダクタンス法及びパルスIV 法による自己発熱抑制時のSOI MOSFETドレイン電流評価},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100635540,
  author = {高橋綱己 and 別府伸耕 and 陳 君璐 and 小田俊理 and 内田 建},
  title = {デバイスシミュレータを用いたナノスケールBulk/SOI FinFET の熱設計},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100635542,
  author = {大橋輝之 and 高橋綱己 and 内田 建 and 小田俊理},
  title = {MOS 界面における変形ポテンシャルの上昇},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100635918,
  author = {中峯嘉文 and 小寺哲夫 and 河野行雄 and 内田 建 and 小田俊理},
  title = {無水フッ酸エッチングによるシリコンナノ結晶の自然酸化膜の除去},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100652972,
  author = {Teruyuki Ohashi and Shunri Oda and Ken Uchida},
  title = {Physical Mechanism of Enhanced Uniaxial Stress Effect on Carrier Mobility in ETSOI MOSFETs},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100652971,
  author = {Jannatul Susoma and Nakamine Yoshifumi and kouichi usami and Tetsuo Kodera and Yukio Kawano and Shunri Oda},
  title = {Scaling of Channel Length for Highly Conductive Silicon Nanocrystal Films},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100652970,
  author = {Yamada Ko and Kodera Tetsuo and Tomohiro Kambara and Kawano Yukio and Oda Shunri},
  title = {Fabrication and Characterization of p-Channel Si Double-Quantum-Dot Structures},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100653857,
  author = {大橋輝之 and 高橋綱己 and 小寺哲夫 and 小田俊理 and 内田 建},
  title = {ユニバーサル曲線を超えるMOSFET移動度の観測とその物理的起源の解明},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100652966,
  author = {Luca Crespi and Tetsuo Kodera and Shunri Oda and Yukio Kawano},
  title = {Terahertz Radiation Detection through a Micro-Scale Antenna and a Silicon-Based Quantum Dot},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100652969,
  author = {Kambara Tomohiro and Kodera Tetsuo and Oda Shunri},
  title = {Dual Function of Charge Sensor: Charge Sensing and Gating},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100653856,
  author = {野口智弘 and 小寺哲夫 and Marolop Simanullang and Surawijaya Akhmadi and 宇佐美浩一 and 小田俊理},
  title = {Si ナノワイヤ FETの電気特性に対するアニーリング処理の影響},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100653586,
  author = {T. Kodera and Y. Fukuoka and SHUNRI ODA and K. Takeda and T. Obata and K. Yoshida and K. Sawano},
  title = {Fabrication and characterization of Si/SiGe quantum dots with capping gate},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100653585,
  author = {R. Mizokuchi and T. Kodera and K. Horibe and Y. Kawano and SHUNRI ODA},
  title = {Charge sensing of a Si triple quantum dot system using single electron transistors},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100653583,
  author = {T. Ferrus and A. Rossi and T. Kodera and T. Kambara and W. Lin and S. Oda and D.A. Williams},
  title = {Microwave manipulation of electrons in silicon quantum dots},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100653581,
  author = {J.Kamioka and T. Kodera and K. Horibe and Y. Kawano and SHUNRI ODA},
  title = {Fabrication and evaluation of heavily P-doped Si quantum dot and back-gate induced Si quantum dot},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100653017,
  author = {神岡 純 and 小寺哲夫 and 武田健太 and 小幡利顕 and 吉田勝治 and 樽茶清悟 and 小田俊理},
  title = {MOS構造gateを有するSi/SiGe量子ドットデバイスの作製},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100653015,
  author = {Jannatul susoma and 中峯嘉文 and 近藤信啓 and 小寺哲夫 and 宇佐美浩一 and 河野行雄 and 小田俊理},
  title = {Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High Performance Electron Device},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100653014,
  author = {Marolop Simanullang and 野口智弘 and Akhmadi Surawijaya and 宇佐美浩一 and 小寺哲夫 and 河野行雄 and 小田俊理},
  title = {Low growth temperature of Ge NWs for electron device application},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100652988,
  author = {別府伸耕 and 小田俊理 and 内田 建},
  title = {ACコンダクタンス法を用いた実験手法に対する検証},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100652987,
  author = {高橋綱己 and 別府伸耕 and 小田俊理 and 内田 建},
  title = {デバイスシミュレータを用いたナノスケールBulk/SOI FinFET熱等価回路モデルの導出},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100652985,
  author = {新留 彩 and 福田祐樹 and 小田俊理 and 内田 建},
  title = {ユニバーサル曲線を超えるMOSFET移動度の観測とその物理的起源の解明},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100652982,
  author = {鈴木大地 and 小田俊理 and 河野行雄},
  title = {GaAs/AlGaAsを用いた周波数可変テラヘルツ波検出器のゲート電圧による応答制御},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100652974,
  author = {新留 彩 and 福田裕樹 and 小田俊理 and 内田 建},
  title = {架橋多層グラフェンナノリボンにおける電荷数の温度依存性},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100652973,
  author = {N. Beppu and T. Takahashi and S Oda and K. Uchida},
  title = {Experimental Study of Self-Heating Effect (SHE) in SOI MOSFETs: Accurate Understanding of Temperatures During AC Conductance Measurement, Proposals of 2ω Method and Modified Pulsed IV},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100654194,
  author = {小寺哲夫 and 溝口来成 and 堀部浩介 and 河野行雄 and 小田俊理},
  title = {単電子トランジスタによるSi三重量子ドットのチャージセンシング},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100665222,
  author = {Takayoshi Kuga and Luca Crespi and Jun Kamioka and Daichi Suzuki and Tetsuo Kodera and Shunri Oda and Yukio Kawano},
  title = {Terahertz dtection with log-spiral antenna-coupled Si quantum dots},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100632992,
  author = {T. Ohashi and T. Takahashi and N. Beppu and S. Oda and K. Uchida},
  title = {Experimental Evidence of Increased Deformation Potential at MOS Interface and its Impact on Characteristics of ETSOI FETs},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100632885,
  author = {T. Takahashi and K.Chen and N.Beppu and S. Oda and K.  Uchida},
  title = {Thermal-Aware Device Design of Nanoscale Bulk/SOI FinFETs: Suppression of Operation Temperature and Its Variability},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100633354,
  author = {S. Oda},
  title = {NeoSilicon Based Nano-electromechanical Information Devices},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100633356,
  author = {S. Oda},
  title = {NeoSilicon Based Nano-electromechanical Information Devices},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100633353,
  author = {S. Oda},
  title = {NeoSilicon Based Nano-electromechanical Devices},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634284,
  author = {Jean Tarun and Shaoyun Huang and Yasuhiro Fukuma and Hiroshi Idzuchi and Yoshichika Otani and Tetsuo Kodera and Naoki Fukata and Koji Ishibashi and Shunri Oda},
  title = {Low-Temperature Magnetoresistance Studies of Silicon Nanowires with Permalloy Leads},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634451,
  author = {Teruyuki Ohashi and Naotoshi Kadotani and Tsunaki Takahashi and Shunri Oda and Ken Uchida},
  title = {Mechanisms of electron mobility enhancement in junctionless SOI MOSFETs},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634449,
  author = {Tsunaki Takahashi and Tetsuo Kodera and Shunri Oda and Ken Uchida},
  title = {Direct Observation of Subband Structures in (110) Si pMOSFETs under High Magnetic Field and Its Impact on Hole Transport},
  booktitle = {G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists},
  year = 2011,
}

@inproceedings{CTT100634448,
  author = {T. Kodera and K. Horibe and W. Lin and T. Kambara and T. Ferrus and A. Rossi and K. Uchida and D. A. Williams and Y. Arakawa and S. Oda},
  title = {Development of silicon quantum dot devices toward spin quantum bits},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634446,
  author = {K. Horibe and T. Kodera and T. Kambara and K. Uchida and S. Oda},
  title = {Fabrication of few-electron silicon quantum dot devices based on an SOI substrate with a top gate cintact},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634393,
  author = {Y. Fukuoka and T. Kodera and K. Takeda and T. Obata and K. Yoshida and T. Otsuka and K. Sawano and K Uchida and Y. Shiraki and S. Tarucha and S. Oda},
  title = {Pd Schottky gate operation voltage of Si/SiGe quantum-point-contact},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634392,
  author = {Tomotaka Sawada and Tetsuo Kodera and Yuki Kawano and Mutsuko Hatano and Shunri Oda},
  title = {Electron transport in a single silicon nanocrystal between nanogap electrodes},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634391,
  author = {Ken Someno and Kouichi Usami and Tetsuo Kodera and Yukio Kawano and Mutsuko Hatano and Shunri Oda},
  title = {Photoluminescence of Nanocrystalline Silicon Quantum Dots prepared by VHF Plasma},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634390,
  author = {Ayse Seyhan and Yoshi Ogawa and Marolop Simanullang and Shunri Oda},
  title = {Photoluminescence and Raman studies of Ge nanowires grown on Si (100) and (111) substrates},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634378,
  author = {Marolop Simanullang and Koichi Usami and Tetsuo Kodera and Ken Uchida and Shunri Oda},
  title = {Synthesis of small-diameter Ge NW at low temperature for electron device application},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634286,
  author = {Tomohiro Kambara and Tetsuo Kodera and Thierry Ferrus and Alessandro Rossi and kousuke Horibe and Yasuhiko Arakawa and David Williams and Shunri Oda},
  title = {Charge detection techniques in Si double quantum dots},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634283,
  author = {Yoshifumi Nakamine and Ken Someno and Hiroki Nikaido and Masahiro Kouge and Tetsuo Kodera and Yukio Kawano and Ken Uchida and Mutsuko Hatano and Shunri Oda},
  title = {Evaluation of Electrical and Optical Property and High-Density Assembly of Nano-Crystalline Silicon Dot Array for Device Application},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634282,
  author = {Muhammad Amin Sulthoni and Tetsuo Kodera and Yukio Kawano and Shunri Oda},
  title = {Transport Simulation of an Electrostatically Defined Silicon Double Quantum Dot Device},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634281,
  author = {Ian C. Robertson and Tetsuo Kodera and Yasuko Yanagida and Ken Uchida and Shunri Oda},
  title = {Utilizing 2D figures of DNA polymer for self-assembly applications on silicon platform},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634279,
  author = {S. Oda},
  title = {NeoSilicon Based Nano-electromechanical Information Devices},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634277,
  author = {Marolop Simanullang and Koichi Usami and Tetsuo Kodera and Ken Uchida and Shunri Oda},
  title = {Microscopic Study of the Germanium Nanowires grown at Low-temperatures by Au-catalysed Chemical Vapour Deposition},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100633357,
  author = {J. Tarun and S. Huang and Y. Fukuma and H.dzuchi and Y. Otani and T. Kodera and N.Fukata and K. Ishibashi and S. Oda},
  title = {Influence of Backgate Voltage on Spin Accumulation in a Silicon Nanowire Spin Valve},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100658480,
  author = {小寺哲夫 and 堀部浩介 and 蒲原知宏 and 山端元音 and 内田建 and 荒川泰彦 and 小田俊理},
  title = {シリコン量子ドットにおけるスピン効果と磁場依存性},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100630238,
  author = {Jean Tarun and Shaoyun Huang and 福間康裕 and 井土 宏 and 大谷義近 and 深田直樹 and 石橋幸治 and 小田俊理},
  title = {シリコンナノワイヤ磁気抵抗効果における界面の影響},
  booktitle = {第72回応用物理学会学術講演会},
  year = 2011,
}

@inproceedings{CTT100634278,
  author = {M. A. Sulthoni and T. Kodera and Y. Kawano and S. Oda},
  title = {A Multi-purpose Electrostatically Defi ned Silicon Quantum Dot Structure},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100655081,
  author = {T. Kodera and K. Horibe and T. Kambara and G. Yamahata and K. Uchida and Y. Arakawa and S. Oda},
  title = {Observation of few-electron regime and suppression of inter-dot tunneling in silicon quantum dots},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100657092,
  author = {A. Rossi and T. Ferrus and T. Kodera and S. Oda and D. A. Williams},
  title = {Charge sensing in silicon quantum dots for quantum computation},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100633355,
  author = {Marolop Simanullang and Koichi Usami and Tetsuo Kodera and Ken Uchida and Shunri Oda},
  title = {Germanium nanowires with 3-nm-diameter prepared by low temperature  (260oC) vapour-liquid-solid chemical vapour deposition},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100630246,
  author = {中峯嘉文 and Mohammad Mofrad and Michiel Van Der Zwan and Johan Van Der Cingel and 小寺哲夫 and 内田 建 and 石原良一 and 小田俊理},
  title = {レーザアニーリングによるシリコンナノ結晶薄膜の電気特性への影響},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100657093,
  author = {T. Kodera and K. Horibe and H. Hayashi and Tomohiro Kambara and K. Uchida and Y. Arakawa and S. Oda},
  title = {Triangularly-positioned silicon triple quantum dots},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100658483,
  author = {Berrin Pinar Algul and Tetsuo Kodera and SHUNRI ODA and Ken Uchida},
  title = {NTFETsにおけるトンネル・リーク電流の抑制に関する研究},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100624802,
  author = {Yoshifumi Nakamine and Tetsuo Kodera and Ken Uchida and Mutsuko Hatano and Shunri Oda},
  title = {Electrical Property of Nano-Crystalline Silicon Thin-Films Prepared by Very High Frequency Plasma Deposition System},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100630237,
  author = {染野 健 and 宇佐美浩一 and 小寺哲夫 and 河野行雄 and 波多野睦子 and 小田俊理},
  title = {VHF プラズマにより作製したナノ結晶シリコンの光学的特性},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100630239,
  author = {澤田知孝 and 小寺哲夫 and 河野行雄 and 波多野睦子 and 小田俊理},
  title = {ナノギャップ電極とナノ結晶シリコン量子ドットの集積配列},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100630240,
  author = {堀部浩介 and 小寺哲夫 and 蒲原知宏 and 内田 建 and 小田俊理},
  title = {シリコン量子ドットと単電子トランジスタ電荷センサーの静電結合評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100630241,
  author = {福岡佑二 and 小寺哲夫 and 大塚朋廣 and 武田健太 and 小幡利顕 and 吉田勝治 and 澤野憲太郎 and 内田 建 and 白木靖寛 and 樽茶清悟 and 小田俊理},
  title = {Si/SiGe量子ドット構造のシミュレーションと作製},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100630242,
  author = {大橋輝之 and 高橋綱己 and 小寺哲夫 and 小田俊理 and 内田 建},
  title = {低温・強磁場環境を利用した極薄膜SOI中の変形ポテンシャルの評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100630245,
  author = {小寺哲夫 and 堀部浩介 and 林 文城 and 蒲原知宏 and Thierry Ferrus and Alessandro Rossi and 内田 建 and David Williams and 荒川泰彦 and 小田俊理},
  title = {並列結合したシリコン量子ドットにおける電荷検出実験},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100624797,
  author = {Ken Someno and Kouichi Usami and Tetsuo Kodera and Mutsuko Hatano and Shunri Oda},
  title = {Photoluminescence of Nanocrystalline ICANS-24Silicon Quantum Dots Prepared by VHF Plasma Cell},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100657094,
  author = {K. Horibe and T. Kodera and T. Kambara and K. Uchida and S. Oda},
  title = {Observation of single-electron regime in a silicon quantum dot by a single-electron transistor},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100620661,
  author = {Y. Fukuoka and T. Kodera and T. Otsuka and K. Takeda and T. Obata and K. Yoshida and K. Sawano and K Uchida and Y. Shiraki and S. Tarucha and S. Oda},
  title = {Pd Schottky gate operation voltage of Si/SiGe quantum-point-contact},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100624119,
  author = {Yoshifumi Nakamine and Mohammad R. T. Mofrad and Michiel van der Zwan and Johan van der Cingel and Tetsuo Kodera and Ken Uchida and Mutsuko Hatano and Ryoichi Ishihara and Shunri Oda},
  title = {Electrical Property of Nano-Crystalline Silicon Thin-Films Transistors Prepared by Very High Frequency Plasma Deposition System},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100620659,
  author = {Muhammad Amin Sulthoni and Tetsuo Kodera and Ken Uchida and Shunri Oda},
  title = {Simulation Study of Electrostatically Defined Silicon Double Quantum Dot Device},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100620658,
  author = {Jean Tarun and Shaoyun Huang and Yasuhiro Fukuma and Hiroshi Idzuchi and YoshiChika Otani and Naoki Fukata and Koji Ishibashi and Shunri Oda},
  title = {Magnetoresistance of Cobalt-Contacted Silicon Nanowire},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100620657,
  author = {S. Oda},
  title = {NeoSilicon Based Nano-electromechanical Devices},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100620660,
  author = {T. Ferrus and A. Rossi and W. Lin and D. A. Williams and T. Kodera and S. Oda},
  title = {An apparent metal-insulator transition in a phosphorous doped silicon single electron transistor},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100620647,
  author = {Marolop Simanullang and Koichi Usami and Tetsuo Kodera and Ken Uchida and Shunri Oda},
  title = {Synthesis of small-diameter Ge NW at low temperature for electron device application},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100620663,
  author = {T. Kodera and K. Horibe and W. Lin and T. Kambara and T. Ferrus and A. Rossi and K. Uchida and D. A. Williams and Y. Arakawa and S. Oda},
  title = {Charge Detection in Silicon Quantum Dots Coupled in Parallel},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100620648,
  author = {Tetsuo Kodera and Kousuke Horibe and Tomohiro Kambara and Gento Yamahata and Ken Uchida and Yasuhiko Arakawa and Shunri Oda},
  title = {Observation of Pauli-Spin Blockade and Single-Electron Regime in Silicon Coupled Quantum Dots},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100620646,
  author = {Yoshifumi Nakamine and Ken Someno and Hiroki Nikaido and Masahiro Kouge and Tetsuo Kodera and Ken Uchida and Mutsuko Hatano and Shunri Oda},
  title = {Evaluation of Electrical and Optical Property and High-Density Assembly of Nano-Crystalline Silicon Dot Array for Device Application},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100620644,
  author = {Y. Nakamine and Michiel van der Zwan and Johan van der Cingel and Tetsuo Kodera and Ken Uchida and Ryoichi Ishihara and Shunri Oda},
  title = {Laser Annealing of Silicon Nanocrystals Thin-films Prepared by VHF Plasma Deposition System},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100620645,
  author = {Ian Robertson and Tetsuo Kodera and Yasuko Yanagida and Ken Uchida and Shunri Oda},
  title = {Constructing Templates for One-dimensional Nanostructure Uusing DNA Origami},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619849,
  author = {小田俊理},
  title = {トップダウンとボトムアッププロセスを融合したシリコン量子構造デバイス},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619845,
  author = {福岡佑二 and 小寺哲夫 and 大塚朋廣 and 武田健太 and 小幡利顕 and 吉田勝治 and 澤野憲太郎 and 内田 建 and 白木靖寛 and 樽茶清悟 and 小田俊理},
  title = {Si/SiGe 量子ドット作製に向けたPd トップゲート動作点の低電圧化},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619843,
  author = {林 文城 and 小寺哲夫 and Thierry Ferrus and Alessandro Rossi and David Williams and 内田 建 and 小田俊理},
  title = {シリコン単電子トランジスタを電荷センサとした電子数変化の検出},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619840,
  author = {角谷直哉 and 高橋綱己 and 大橋輝之 and 小寺哲夫 and 小田俊理 and 内田 建},
  title = {高不純物濃度のETSOI(Extremely-Thin SOI) 拡散層における移動度とSOI 膜厚および不純物濃度の関係},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619846,
  author = {染野 健 and 宇佐美浩一 and 小寺哲夫 and 波多野睦子 and 小田俊理},
  title = {VHF プラズマセル法によるナノ結晶シリコンのフォトルミネッセンス特性},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619842,
  author = {堀部浩介 and 小寺哲夫 and 蒲原知宏 and 内田 建 and 小田俊理},
  title = {チャージセンサによるシリコン量子ドットの少数電子状態観測},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619848,
  author = {中峯嘉文 and Michiel Van Der Zwan and Johan Van Der Cingel and 小寺哲夫 and 内田 建 and 石原良一 and 小田俊理},
  title = {VHF プラズマにより作製されたシリコンナノ結晶のレーザアニーリング},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100654159,
  author = {T. Ohashi and T. Takahashi and N. Beppu and S. Oda and K. Uchida},
  title = {Experimental Evidence of Increased Deformation Potential at MOS Interface and Its Impact on Characteristic of ETSOI FETs},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100654158,
  author = {T. Takahashi and N. Beppu and K. Chen and S. Oda and K. Uchida},
  title = {Thermal-Aware Device Design of Nanoscale Bulk/SOI FinFETs: Suppression of Operation Temperature and Its Variability},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100620954,
  author = {N. Kadotani and T. Takahashi and K. Chen and T. Kodera and S. Oda and K.  Uchida},
  title = {Anomalous Electron Mobility in Extremely-Thin SOI (ETSOI) Diffusion Layers with SOI Thickness of Less Than 10 nm and High Doping Concentration of Greater Than 1×1018cm-3},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620932,
  author = {Jean L. Tarun and Shaoyun Huang and Y. Fukuma and H. Idzuchi and Y. Otani and Naoki Fukata and Koji Ishibashi and Shunri Oda},
  title = {Spin valve effects in Silicon nanowires},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620933,
  author = {Jean L. Tarun and Shaoyun Huang and Y. Fukuma and H. Idzuchi and Y. Otani and Naoki Fukata and Koji Ishibashi and Shunri Oda},
  title = {Distinct Spin Valve Effects in Silicon Nanowires Measured by Non-local Electrode Configuration},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100621076,
  author = {S. Oda},
  title = {NeoSilicon based nanoelectromechanical information devices},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100660364,
  author = {武田健太 and 小幡利顕 and 福岡佑二 and 大塚朋廣 and 小寺哲夫 and 吉田勝治 and 澤野憲太郎 and 小田俊理 and 白木靖寛 and 樽茶清悟},
  title = {PdショットキーゲートによるSi/SiGe量子ドットの作製とその評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100624122,
  author = {Berrin Pinar Algul and Tetsuo Kodera and Shunri Oda and Ken Uchida},
  title = {Study on Device Parameters of Carbon Nanotube FETs to RealizeSteep Subthreshold Slope of less than 60 mV/decade},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620277,
  author = {ベッリン ピナー アルグル and 小寺哲夫 and 小田俊理 and 内田 建},
  title = {CNTトランジスタにおけるバンド間トンネルを利用したS係数60 mV/dec未満を実現するデバイスパラメータの研究},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620276,
  author = {高下雅央 and 石川哲也 and 宇佐美浩一 and 小寺哲夫 and 内田 建 and 小田俊理},
  title = {凹凸基板を用いたディップコーティング法によるナノ結晶シリコンの集積化技術},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620251,
  author = {小寺哲夫 and 山端元音 and 蒲原知宏 and 内田 建 and 小田俊理},
  title = {シリコン結合量子ドットにおけるスピン効果の観測},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620250,
  author = {福岡佑二 and 小寺哲夫 and 大塚朋廣 and 武田健太 and 小幡利顕 and 吉田勝治 and 澤野憲太郎 and 内田 建 and 白木靖寛 and 樽茶清悟 and 小田俊理},
  title = {Si/SiGe系2DEGのPdショットゲート制御による結合量子ドットの作製},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620249,
  author = {蒲原知宏 and 小寺哲夫 and 山端元音 and 内田 建 and 小田俊理},
  title = {サイドゲートとトップゲートを用いたシリコン二重結合量子ドット形成シミュレーション},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620244,
  author = {小林大助 and 栗原智之 and 小寺哲夫 and 内田 建 and 野平博司 and 小田俊理},
  title = {Pr系酸化膜を用いたヘテロ積層構造トンネル膜の電気特性シミュレーションと作製及び評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620243,
  author = {引田和宏 and 小寺哲夫 and 小田俊理 and 内田 建},
  title = {InPに格子整合したIn0.53Ga0.47Asバンド構造の一軸歪み依存性},
  booktitle = {第71回応用物理学会学術講演会},
  year = 2010,
}

@inproceedings{CTT100620242,
  author = {角谷直哉 and 高橋綱己 and 小寺哲夫 and 小田俊理 and 内田 建},
  title = {pn接合の無い極薄膜SOIトランジスタの作製と電気特性評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620241,
  author = {kouichi usami and Tetsuo Kodera and Ken Uchida and SHUNRI ODA},
  title = {Small-diameter Ge nanowires grown at 280°C by VLS－CVD},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620240,
  author = {Jean Tarun and Shaoyun Huang and 福間康裕 and 井土 宏 and 大谷義近 and 深田直樹 and 石橋幸治 and 小田俊理},
  title = {Silicon Nanowire-Based Lateral Spin Valve Device},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100619876,
  author = {S. Oda},
  title = {Scaled silicon NEM hybrid devices},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100619873,
  author = {Muhammad Amin Sulthoni and Tetsuo Kodera and Ken Uchida and Shunri Oda},
  title = {Preparation of SOI-based Double Quantum Dots Structure Defined by Geometry and Electrostatically},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100619872,
  author = {Tomohiro Kambara and Tetsuo Kodera and Gento Yamahata and Ken Uchida and Shunri Oda},
  title = {Simulation study of charge modulation in coupled quantum dots in silicon},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100660366,
  author = {Toshiaki Obata and 申潤錫 and ロランドブルナ and Kenta Takeda and Yuji Fukuoka and 大塚朋廣 and Tetsuo Kodera and 吉田勝治 and 澤野憲太郎 and SHUNRI ODA and 白木靖寛 and Seigo Tarucha},
  title = {Lateral dot fabrication by using a MOS electric gate on SiGe hetero structure},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100657097,
  author = {Tetsuo Kodera and Tomohiro Kambara and Kousuke Horibe and Gento Yamahata and Ken Uchida and Shunri Oda},
  title = {Silicon Quantum Dots for Spin-Based Quantum Information Processing},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100619870,
  author = {S. Oda},
  title = {Silicon Quantum Dot Devices},
  booktitle = {Sixteenth School on Condensed Matter Physics},
  year = 2010,
}

@inproceedings{CTT100624123,
  author = {T. Kodera and G. Yamahata and T. Kambara and K. Uchida and C. M. Marcus and S. Oda},
  title = {Magnetic field dependence of a leakage current in Pauli-spin blockade regime of silicon double quantum dots},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100657099,
  author = {Tetsuo Kodera and Gento Yamahata and Tomohiro Kambara and Kousuke Horibe and Thierry Ferrus and David Williams and Yasuhiko Arakawa and Shunri Oda},
  title = {Realization of lithographically-defined silicon quantum dots without unintentional localized potentials},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100619864,
  author = {Ian C. Robertson and Ken Uchida and Shunri Oda},
  title = {Artificial Membrane Constructed by one-dimensional Nanostructure using DNA Origami},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100619863,
  author = {J. Ogi and T. Ferrus and T. Kodera and Y. Tsuchiya and K. Uchida and D. A. Williams and S. Oda and H. Mizuta},
  title = {Single-electron energy dissipation processes mediated by slab mode phonons observed for suspended silicon double quantum dots},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100624125,
  author = {T. Kodera and G. Yamahata and T. Kambara and K. Horibe and K. Uchida and C. M. Marcus and S. Oda},
  title = {Spin-related tunneling in lithographically-defined silicon quantum dots},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100598670,
  author = {H. Armini and M. Carli and J. Snauwaert and V. Cherman and I. De Wolf and V. Simons and A. Maestre Caro and J. Moonens and P. Neutens and K. Arstila and J. Ogi and S. Oda and Y. Tsuchiya},
  title = {Nanoscale Selective Silicon Nanowires Surface Functionalization for Sensing Applications},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100598632,
  author = {Ian C.  Robertson and K. Uchida and S. Oda},
  title = {Artificial membrane constructed by one-dimensional nanostructure using DNA origami},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100657100,
  author = {T. Kodera and K. Ono and N. Kumagai and T. Nakaoka and S. Tarucha and S. Oda and Y. Arakawa},
  title = {Resonant tunnelling between a self-assembled InAs quantum dot and an electrically-defined InGaAs quantum dot},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100660138,
  author = {小寺哲夫 and 堀部浩介 and 蒲原知宏 and 山端元音 and T. Ferrus and D. Williams and 荒川泰彦 and 小田俊理},
  title = {少数電子シリコン量子ドットの作製とスピン現象の観測},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620972,
  author = {蒲原知宏 and 小寺哲夫 and 山端元音 and 内田 建 and 小田俊理},
  title = {ダブルトップゲートを有するシリコン量子ドットのシミュレーションと作製},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620974,
  author = {Muhammad Amin Sulthoni and Tetsuo Kodera and Ken Uchida and Syunri Oda},
  title = {Simulation of silicon double quantum dots device fabricated by combining lithographical and electrostatical approaches},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100657102,
  author = {T. Kodera and K. Ono and N. Kumagai and T. Nakaoka and S. Tarucha and S. Oda and Y. Arakawa and N. Kumagai},
  title = {Magnetic field dependence of resonant tunneling between an InAs quantum dot and an InGaAs quantum dot},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620994,
  author = {中峯嘉文 and 小寺哲夫 and 内田 建 and 小田俊理},
  title = {VHFプラズマパワーの変化によるシリコンナノ結晶の縮小化},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620962,
  author = {小田俊理},
  title = {ナノ結晶シリコン量子ドットデバイス},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100601109,
  author = {G. Yamahata and T. Kodera and T. Kambara and K. Uchida and C. M. Marcus and S. Oda},
  title = {Pauli Spin Blockade in a Lithographycally-defined Silicon Double Quantum Dot},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100598682,
  author = {SHUNRI ODA},
  title = {VHF Plasma process for size-controlled Si nanodot fabrication},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100621075,
  author = {高橋綱己 and 山端元音 and 小木 純 and 小寺哲夫 and 小田俊理 and 内田 建},
  title = {強磁場印加による(110) pMOSFETサブバンド構造の直接的観測},
  booktitle = {第57回応用物理学関係連合講演会},
  year = 2010,
}

@inproceedings{CTT100620971,
  author = {永見 佑 and 土屋良重 and 水田 博 and 内田 建 and 小田俊理},
  title = {エレクトロメカニカルシミュレーションによるNEMSメモリのスケーリング特性},
  booktitle = {第57回応用物理学関係連合講演会},
  year = 2010,
}

@inproceedings{CTT100620963,
  author = {ロバートソン イアン and 内田 建 and 小田 俊理},
  title = {Utilizing electoosmotic affects in aligning DNA functionalized nanowires after being anchored onto a pattern surface},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100607934,
  author = {Xin Zhou and Ken Uchida and Shunri Oda},
  title = {Current fluctuations in three-dimensionally stacked Si nanorystals thin films},
  booktitle = {Applied Physics Letters},
  year = 2010,
}

@inproceedings{CTT100620961,
  author = {小木 純 and Thierry Ferrus and 小寺哲夫 and 土屋良重 and 内田 建 and David Williams and 水田 博 and 小田俊理},
  title = {シリコン宙づり構造内の結合二重量子ドットの電子フォノン相互作用},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100600991,
  author = {H. Mizuta and Y. Tsuchiya and S. Oda},
  title = {Hybrid Silicon Nanoelectromechanical Devices: Physics and Applications},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100658444,
  author = {J. Ogi and T. Ferrus and T. Kodera and Y. Tsuchiya and K. Uchida and D. A. Williams and S. Oda and H. Mizuta},
  title = {Inelastic single-electron tunneling assisted by confined phonons observed for suspended silicon double quantum dots},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100599009,
  author = {T. Takahashi and G. Yamahata and J. Ogi and T. Kodera and S. Oda and K.  Uchida},
  title = {Direct Observation of Subband Structures in (110) pMOSFETs under High Magnetic Field: Impact of Energy Split Between Bands and Effective Masses on Hole Mobility},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100591580,
  author = {SHUNRI ODA},
  title = {Silicon quantum dots devices},
  booktitle = {International workshop on Physics, Delhi,招待講演},
  year = 2009,
}

@inproceedings{CTT100599323,
  author = {小田俊理},
  title = {Silicon quantum dots devices},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100599325,
  author = {SHUNRI ODA},
  title = {Silicon quantum dots devices},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100599333,
  author = {J. Ogi and T Ferrus and T. Kodera and Y. Tsuchiya and K. Uchida and D. A. Williams and S. Oda and Hiroshi Mizuta},
  title = {Electron-phonon interaction in suspended Si double quantum dots},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100624297,
  author = {T. Kodera and G. Yamahata and T. Kambara and T. Ferrus and D. Williams and S. Oda and Y. Arakawa},
  title = {Improvements of transport properties in silicon quantum dots},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100599356,
  author = {J. Ogi and T. Ferrus and T. Kodera and Y. Tsuchiya and K. Uchida and D. A. Williams and H. Mizuta and S. Oda},
  title = {Suspended quantum dot devices for sensor or quantum bit applications},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100599346,
  author = {SHUNRI ODA},
  title = {Silicon quantum dots and related devices},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100601390,
  author = {T. Nagami and Y. Tsuchiya and K. Uchida and hiroshi mizuta and S. Oda},
  title = {Scaling Analysis of NEMS Memory Devices},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100601401,
  author = {Liang He and kouichi usami and Ken Uchida and Shunri Oda},
  title = {Preparation and characterization of P-doped Ge nanowires by VLS-CVD},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100601087,
  author = {D. Hippo and Y. Nakamine and K. Uchida and S. Oda},
  title = {Thermotherapy for Cancer Using Silicon Nanocrystals},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100601086,
  author = {Tetsuya Ishikawa and Hiroki Nikaido and kouichi usami and Ken Uchida and Shunri Oda},
  title = {Formation of two-dimensional array of Si nanocrystals using nano Si ink},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100601085,
  author = {Xin Zhou and Ken Uchida and Shunri Oda},
  title = {Carrier transport in ensemble of Si nanocrystals prepared by VHF plasma process,},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100601061,
  author = {Chao Yan and Ken Uchida and Shunri Oda},
  title = {Design Optimization of MEMS(NEMS) Resonator by 3-D Anisotropic Thermoelastic Modeling},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100603666,
  author = {Y.Nakamine and T.Kodera and K.Uchida and Shunri Oda},
  title = {Phosphorous-Doping in Silicon Nanocrystals by using VHF Plasma},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100599342,
  author = {SHUNRI ODA},
  title = {Performance Projections for Nanomechanical Memory},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100603665,
  author = {Berrin Pinar Algul and Ken Uchida and Shunri Oda},
  title = {Modeling of Band-to-Band Tunneling in MOS Structures},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100657126,
  author = {Y. Nakamine and T. Kodera and K. Uchida and S. Oda},
  title = {Removal of Surface Oxide Layer from Silicon Nanocrystals by HF Vapor Etching},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100603664,
  author = {Jean L. Tarun and Shaoyun Huang and Ken Uchida and Naoki Fukata and Koji Ishibashi and Shunri Oda},
  title = {Transport Properties of Silicon Nanowire with Ferromagnetic Leads},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100603663,
  author = {Ian C. Robertson and Ken Uchida and Shunri Oda},
  title = {Artificial Membrane Interfacial Layers via 1D nanostructures for Bio-Sensors},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100601407,
  author = {T. Kodera and G. Yamahata and T. Kambara and Thierry  Ferrus and D. A. Williams and K. Uchida and Yasuhiko Arakawa and S. Oda},
  title = {Fabrication and characterization of silicon double quantum dots towards spin qubits},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100599354,
  author = {Gento Yamahata and Tetsuo Kodera and Hiroshi Mizuta and Ken Uchida and Shunri Oda},
  title = {Electron transport through coupled Si quantum dots toward quantum information devices},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100660375,
  author = {小寺哲夫 and Thierry Ferrus and 山端元音 and 中岡俊裕 and David Williams and 小田俊理 and 荒川泰彦},
  title = {シリコン結合量子ドットの電子輸送特性評価},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100599362,
  author = {小田俊理 and 内田 建},
  title = {シリコンナノテクノロジー：１次元、０次元、その先は？},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100599364,
  author = {水田 博 and 土屋良重 and 小田俊理},
  title = {ナノエレクトロメカニカル構造を有するシリコンナノ機能デバイス},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100599375,
  author = {T. Ishikawa and H. Nikaido and Kouichi Usami and K. Uchida and S. Oda},
  title = {Fabrication of nano Si ink and two-dimensionally assembled Si nanocrystals},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100600820,
  author = {H. Mizuta and M. A. G-. Ramirez and F. A. Hassani and M. A. Ghiass and Y. Tsuchiya and T. Nagami and B. Pruvost and J. Ogi and S. Sawai and S. Oda and M. Okamoto},
  title = {Multi-scale Simulation of Hybrid Silicon Nano-electromechanical (NEM) Information Devices},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100600992,
  author = {Zhou and K Uchida and SHUNRI ODA},
  title = {Characteristics of current oscillations phenomenon in Si nanorystal thin films},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100600993,
  author = {二階堂広基 and 石川哲也 and 内田 建 and 小田俊理},
  title = {Langmuir-Blodgett法によるナノ結晶シリコン量子ドットの集積配列},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100600994,
  author = {筆宝大平 and 中峯嘉文 and 内田 健 and 小田俊理},
  title = {レーザ照射によるナノ結晶シリコンの温度上昇の観測},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100600995,
  author = {晏超 and 内田 建 and 小田俊理},
  title = {MEMS(NEMS) 共振器設計のための体系的最適化法},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100600996,
  author = {山端元音 and 小寺哲夫 and 水田 博 and 内田 建 and 小田俊理},
  title = {トップゲートとサイドゲートによるシリコン結合量子ドットの静電結合制御},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100600997,
  author = {小寺哲夫 and 大野圭司 and 中岡俊裕 and 熊谷直人 and 樽茶清悟 and 小田俊理 and 荒川泰彦},
  title = {InAs量子ドットとInGaAs量子井戸を内包した縦型ピラー構造の電気伝導特性},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100603668,
  author = {小田俊理},
  title = {イントロダクトリートーク：ネオシリコン材料の構造制御と新機能},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100600811,
  author = {Hiroshi Mizuta and M. A. G.-Ramirez and Y. Tsuchiya and T. Nagami and S. Oda},
  title = {NEM – MOS Co-integration for Fast & Nonvolatile Memory Applications},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100584676,
  author = {Aditi Goyal and Muhammad A Rafiq and Ken Uchida and Shunri Oda},
  title = {Parameter Randomness Analysis of Multiple Tunnel Junctions},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585513,
  author = {Xin Zhou and Ken Uchida and Hiroshi Mizuta and Shunri Oda},
  title = {Current oscillations observed for sparse Si nanorystal thin films},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585370,
  author = {J. Ogi and T. Ferrus and Y. Tsuchiya and K. Uchida and D. A. Williams and S. Oda and Hiroshi Mizuta},
  title = {Study of single-electron transport via suspended double silicon quantum dots},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585375,
  author = {Xin Zhou and Ken Uchida and Hiroshi Mizuta and Shunri Oda},
  title = {Lateral conduction of Si nanorystals by thin film transistor structures},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585372,
  author = {Tomoyuki Kurihara and Yohei Nagahama and Daisuke Kobayshi and Hiroki Niikura and Yoshishige Tsuchiya and Hiroshi Mizuta and Hiroshi Nohira and Ken Uchida and Shunri Oda},
  title = {Engineering of Heterostructured Tunnel Barrier for Non-Volatile Memory Applications: Potential of Pr-based Heterostructured Barrier as a Tunneling Oxide},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585528,
  author = {中峯嘉文 and 内田 建 and 小田俊理},
  title = {VHFプラズマにより作製されたSi量子ドットのPドーピング},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585527,
  author = {永見 佑 and 土屋良重 and 斎藤慎一 and 新井 唯 and 嶋田壽一 and 水田 博 and 内田 建 and 小田俊理},
  title = {pn接合部でのトラップを介したトンネリングを考慮したNEMSメモリの},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100599369,
  author = {S. Oda},
  title = {Nano-silicon for novel quantum dot based electronic and photonic devices},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100599002,
  author = {S. Oda},
  title = {NeoSilicon Materials},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100598995,
  author = {村木太郎 and 李 伝波 and 増渕和典 and 宇佐美浩一 and 内田 建 and 小田俊理},
  title = {ラジカル窒化を用いたゲルマニウムナノワイヤデバイスの作製},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585526,
  author = {小木 純 and Thierry Ferrus and 土屋良重 and 内田 建 and David Williams and 水田 博 and 小田俊理},
  title = {Siナノブリッジチャネルに埋め込まれた結合二重量子ドット特性観測},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585522,
  author = {Xin Zhou and 中峯嘉文 and 内田 建 and 小田俊理},
  title = {Trap effects on carrier transport in Si nanocrystals thin film},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585523,
  author = {山端元音 and 土屋良重 and 水田 博 and 内田 建 and 小田俊理},
  title = {シリコン量子ドットデバイスの制御性向上に関する検討},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100601394,
  author = {Chao Yan and Ken Uchida and Shunri Oda},
  title = {Design Optimization of MEMS(NEMS) Resonator by 3-D Anisotropic Thermoelastic Modeling},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100566751,
  author = {Gento. Yamahata and Ken. Uchida and Shunri. Oda and Yoshishige. Tsuchiya and Hiroshi. Mizuta},
  title = {Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100566704,
  author = {Yoshiyuki Kawata and Shunri Oda and Yoshishige Tsuchiya and Hiroshi Mizuta},
  title = {Detection of Single-Charge Polarisation in SiliconDouble Quantum Dots by Using Serially-ConnectedMultiple Single-Electron Transistors},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100591581,
  author = {SHUNRI ODA},
  title = {Silicon quantum dot devices.},
  booktitle = {26th International Conference on Microelectronics, Nis, Serbia,招待講演},
  year = 2008,
}

@inproceedings{CTT100591582,
  author = {SHUNRI ODA},
  title = {NeoSilicon Devices},
  booktitle = {22nd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 22), Breckenridge,招待講演},
  year = 2007,
}

@inproceedings{CTT100529089,
  author = {S. Oda},
  title = {Preparation and Applications of Nanocrystalline Silicon Devices},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529087,
  author = {Y. Tsuchiya and R.  Furukawa and T. Suto and H. Mizuta and S. Oda and H. Nohira and T. Maruizumi and Y. Shiraki},
  title = {Effect of Post-Deposition Annealing on the Electrical Properties of MOCVD-grown Praseodymium  Silicate MIS Diode},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529171,
  author = {小田俊理},
  title = {ネオSiによる新デバイス},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529084,
  author = {S. Oda and Y. Tsuchiya and H. Mizuta},
  title = {NeoSilicon: Novel functional materials with controlled interaction between quantum dots},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529086,
  author = {S. Oda and S. Y. Huang and M. A. Salem and D. Hippo and A. Tanaka and Y. Tsuchiya and H. Mizuta},
  title = {Nanocrystalline Silicon Quantum Dot Devices},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529083,
  author = {M. Manoharan and H. Mizuta and S. Oda},
  title = {Hybrid simulation of the RFSET and its charge sensitivity analysis},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529168,
  author = {水田 博 and 永見 祐 and Benjamin Pruvost and 百々信幸 and 小木 純 and 松田真之助 and 柴村純平 and 土屋良重 and 斎藤慎一 and 新井 唯 and 木村嘉伸 and 嶋田壽一 and 小田俊理},
  title = {ナノエレクトロメカニカル構造を有するシリコンナノ機能デバイス},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529081,
  author = {M. A. H. Khalafalla and H. Mizuta and S. Oda and Z. A. K. Durrani},
  title = {Possible Nonequilibrium Kondo Effect in a Nanocrystalline Silicon Point-Contact Transistor},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529080,
  author = {Y. Kawata and M. Khalafalla and K. Usami and Y. Tsuchiya and H. Mizuta and S. Oda},
  title = {Tunnel-coupled double nanocrystalline Si quantum dots integrated into a singleelectron transistor},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529107,
  author = {筆宝大平 and 浦川圭 and 川田善之 and 土屋良重 and 水田博 and 越田信義 and 小田俊理},
  title = {2方向エッチングによるシリコン3次元フォトニック結晶への欠陥導入プロセス},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529160,
  author = {Benjamin Pruvost and 水田　博 and 小田俊理},
  title = {ハイブリッドSET-NEMS用いた構造を新機能デバイスの研究},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529164,
  author = {鄭 恵貞 and 田中敦之 and 筆宝大平 and 宇佐美浩一 and 土屋良重 and 水田　博 and 小田俊理},
  title = {サイズ制御したシリコン量子ドットからの可視エレクトロルミネッセンス},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529121,
  author = {田中敦之 and 土屋良重 and 宇佐美浩一 and 齋藤真一 and 新井　唯 and 水田　博 and 小田俊理},
  title = {LB膜作製法を用いたナノ結晶シリコンドット集積化技術},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529153,
  author = {永見　佑 and 松田真之介 and 土屋良重 and 斎藤慎一 and 新井　唯 and 嶋田壽一 and 水田　博 and 小田俊理},
  title = {有限要素シミュレーションによるNEMSメモリの読み出し特性の解析},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529156,
  author = {松田真之介 and 永見　佑 and 土屋良重 and 斎藤慎一 and 新井　唯 and 嶋田壽一 and 水田　博 and 小田俊理},
  title = {NEMSメモリデバイスの実現にむけた電圧印加による曲がり梁のスイッチング検証},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529078,
  author = {S. Oda},
  title = {Preparation, characterization and application of nanocrystalline silicon quantum dot devices},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529118,
  author = {向井　崇 and 田中敦之 and 土屋良重 and 宇佐美浩一 and 水田　博 and 小田俊理},
  title = {分散液中のナノ結晶シリコンドットの表面修飾},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529159,
  author = {古川亮介 and 須藤貴也 and 土屋良重 and 野平博司 and 水田　博 and 丸泉琢也 and 白木靖寛 and 小田俊理},
  title = {MOCVD法によるPrシリケートゲート絶縁膜のN2アニール効果の検討},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529135,
  author = {澤井俊一郎 and 東島　賢 and 土屋良重 and 岡本政邦 and 水田　博 and 小田俊理},
  title = {第一原理計算によるSiO2/Si/SiO2ナノ構造中のフォノン解析},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529137,
  author = {川田善之 and Mohamed Kharafalla and 宇佐美浩一 and 土屋良重 and 水田　博 and 小田俊理},
  title = {ナノ結晶シリコン二重量子ドットと単電子トランジスタの集積化},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529141,
  author = {Manoharan Muruganathan and Kawata Yoshiyuki and Mizuta Hiroshi and Oda Shunri},
  title = {RF-SETに向けた可変トンネルバリア・マルチゲートシリコン単電子トランジスタ},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529144,
  author = {Mohammed Khalafalla and 水田　博 and 小田俊理 and DurraniZahid},
  title = {ナノ結晶シリコンポッイントコンタクトトランジスタにおけるクーロンギャップ内共嗚コンダクタンスの観測},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529149,
  author = {小木　純 and Mohammed Khalafalla and 永見　佑 and 土屋良重 and 水田　博 and 小田俊理},
  title = {シリコンナノブリッジトランジスタの作製と評価},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529150,
  author = {栗原智之 and 新倉浩樹 and 土屋良重 and 水田　博 and 小田俊理},
  title = {スタック型二重フローティングゲート不揮発性メモリ特性シミュレーション},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529130,
  author = {山端元音 and 土屋良重 and 水田　博 and 小田俊理},
  title = {シリコン多重量子ドットアレイデバイスの作製},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529077,
  author = {M. Khalafalla and H. Mizuta and Z. A.K. Durrani and S. Oda},
  title = {Observation of quantum effects in the electron transport characteristics of a nanocrystalline silicon point contact transistor},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100542038,
  author = {T. Nagami and N.Momo and Y. Tsuchiya and S. Saito and T. Arai and T. Shimada and H. Mizuta and S. Oda},
  title = {Electro-Mechanical simulation of programming/readout characteristics for NEMS memory},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529074,
  author = {N. Momo and T. Nagami and S. Matsuda and Y. Tsuchiya and S. Saito and T. Arai and Y. Kimura and T. Shimada and H. Mizuta and S. Oda},
  title = {Fabrication and characterization of nanoscale suspended floating gates for NEMS memory},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529071,
  author = {J. Ogi and N. Momo and M.A.H. Khalafalla and Y. Tsuchiya and H. Mizuta and S. Oda},
  title = {Fabrication and evaluation of Si nanobridge transistor},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529068,
  author = {B. Pruvost and H. Mizuta and S. Oda},
  title = {Design and Analysis of Functional NEMS-gate MOSFETs and SETs},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529063,
  author = {Hea Jeong Cheong and D. Hippo and A. Tanaka and K. Usami and Y. Tsuchiya and H. Mizuta and S. Oda},
  title = {Visible Electroluminescence from Size-Controlled Silicon Quantum Dots},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529065,
  author = {D. Hippo and Y. Kawata and Y. Tsuchiya and H. Mizuta and S. Oda and K. Urakawa and N. Koshida},
  title = {Fabrication of Silicon 3D Photonic Crystal Structures in 100nm Scale Using Double Directional Etchings Method},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529060,
  author = {S. Oda and H. Mizuta},
  title = {Nanocrystalline Silicon Quantum Dot Devices},
  booktitle = {Electrochemical Society,Denver,招待講演},
  year = 2006,
}

@inproceedings{CTT100529062,
  author = {S. Oda and H. Mizuta},
  title = {Charge Storage and Electron/Light Emission Properties of Silicon Nanocrystals},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100566698,
  author = {Hea-Jeong Cheong and Daihei Hippo and Atsushi Tanaka and Kouichi Usami and Yoshishige Tsuchiya and Hiroshi Mizuta and Shunri Od},
  title = {Visible Electroluminescence from Size-Controlled Silicon Quantum Dots},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100542039,
  author = {A Surawijaya and Y. Tsuchiya and H. Mizuta and S. Oda},
  title = {Resonant Tunneling Device Using a Single Nanocrystalline Silicon Quantum Dot},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100542041,
  author = {永見　佑 and 百々信幸 and 土屋良重 and 斎藤慎一 and 新井　唯 and 嶋田壽一 and 水田　博 and 小田俊理},
  title = {3次元有限要素シミュレーションによるNEMSメモリのスイッチング電圧低減の検討},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529100,
  author = {M.Muruganathan and H. Mizuta and S.  Oda},
  title = {SET-Spiceハイブリッドシミュレーションを用いたRE-SETの感度解析},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100542042,
  author = {小木　純 and 百々信幸 and Mohammed Khalafalla and 土屋良重 and 水田　博 and 小田俊理},
  title = {シリコンナノブリッジトランジスタの作製と評価},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100542043,
  author = {川田善之 and Mohamed Kharafalla and 宇佐美浩一 and 土屋良重 and 水田　博 and 小田俊理},
  title = {マルチゲートシリコン単電子トランジスタの作製},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100542044,
  author = {鄭　恵貞 and 筆宝大平 and 田中敦之 and 宇佐美浩一 and 土屋良重 and 水田　博 and 小田俊理},
  title = {シリコン量子ドットからの可視エレクトロルミネッセンスの観測},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100528188,
  author = {K. Ogawa and K. Tomizawa and Y-T. Tan and My The Doan and Yu Ming Bin and Dim-Lee Kwong and S. Yamada and J. B. Cole and Y. Katayama and H. Mizuta and S. Oda},
  title = {Broadband Variable Chromatic Dispersion in Photonic-Band Electro-Optic Waveguide},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100542045,
  author = {百々信幸 and 永見　佑 and 土屋良重 and 斎藤慎一 and 新井　唯 and 嶋田壽一 and 水田　博 and 小田俊理},
  title = {NEMSメモリデバイスの実現に向けた2層ブリッジ構造体の作製},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529092,
  author = {筆宝大平 and 浦川　圭 and 川田善之 and 土屋良重 and 水田　博 and 越田信義 and 小田俊理},
  title = {2方向エッチングによるシリコン3次元フォトニック結晶の作製},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529093,
  author = {田中敦之 and 土屋良重 and 宇佐美浩一 and 水田　博 and 小田俊理},
  title = {分散溶媒を用いたナノ結晶シリコンドット集積化技術：傾斜基板上での集積化},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529095,
  author = {B. Pruvost and H. Mizuta and S. Oda},
  title = {ナノエレクトロメカニカルゲートを有する高機能MOSFET及びSETの設計・解析},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100529096,
  author = {佐藤大典 and 新倉浩樹 and 土屋良重 and 水田　博 and 野平博司 and 丸泉琢也 and 白木靖寛 and 小田俊理},
  title = {SiO2/HfO2/SiO2積層トンネル膜を用いたスタック型二重フローティングゲートメモリ},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100542040,
  author = {S-Y. Huang and K. Usami and Y. Tsuchiya and H. Mizuta and S. Oda},
  title = {A Few Electron Memory Device Based on Surface Nitrided Nanocrystalline Silicon Dots},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100407952,
  author = {筆宝大平 and 浦川　圭 and 川田善之 and 土屋良重 and 水田　博 and 越田信義 and 小田俊理},
  title = {2方向エッチングによるシリコン3次元フォトニック結晶の作製},
  booktitle = {第53回応用物理学関係連合講演会},
  year = 2006,
}

@inproceedings{CTT100407951,
  author = {田中敦之 and 土屋良重 and 宇佐美浩一 and 水田　博 and 小田俊理},
  title = {分散溶媒を用いたナノ結晶シリコンドット集積化技術：傾斜基板上での集積化},
  booktitle = {第53回応用物理学関係連合講演会},
  year = 2006,
}

@inproceedings{CTT100406937,
  author = {B. Pruvost and H. Mizuta and S. Oda},
  title = {Design and Analysis of Functional NEMS-gate MOSFETs and SETs},
  booktitle = {IEEE Silicon Nanoelectrinics Workshop},
  year = 2006,
}

@inproceedings{CTT100406947,
  author = {佐藤大典 and 新倉浩樹 and 土屋良重 and 水田　博 and 野平博司 and 丸泉琢也 and 白木靖寛 and 小田俊理},
  title = {SiO2/HfO2/SiO2積層トンネル膜を用いたスタック型二重フローティングゲートメモリ},
  booktitle = {第53回応用物理学関係連合講演会},
  year = 2006,
}

@inproceedings{CTT100406944,
  author = {M.Muruganathan and H. Mizuta and S.  Oda},
  title = {SET-Spiceハイブリッドシミュレーションを用いたRE-SETの感度解析},
  booktitle = {第53回応用物理学関係連合講演会},
  year = 2006,
}

@inproceedings{CTT100406933,
  author = {S. Oda and H. Mizuta},
  title = {Nanocrystalline Silicon Quantum Dot Devices},
  booktitle = {Electrochemical Society},
  year = 2006,
}

@inproceedings{CTT100406943,
  author = {B. Pruvost and H. Mizuta and S. Oda},
  title = {ナノエレクトロメカニカルゲートを有する高機能MOSFET及びSETの設計・解析},
  booktitle = {第53回応用物理学関係連合講演会},
  year = 2006,
}

@inproceedings{CTT100406939,
  author = {T. Nagami and N. Momo and Y. Tsuchiya and S. Saito and T. Arai and T. Shimada and H. Mizuta and S. Oda},
  title = {Fabrication and characterization of nanoscale suspended floating gates for NEMS memory},
  booktitle = {IEEE Silicon Nanoelectrinics Workshop},
  year = 2006,
}

@inproceedings{CTT100406938,
  author = {J. Ogi and N. Momo and M.A.H. Khalafalla and Y. Tsuchiya and H. Mizuta and S. Oda},
  title = {Fabrication and evaluation of Si nanobridge transistor},
  booktitle = {IEEE Silicon Nanoelectrinics Workshop},
  year = 2006,
}

@inproceedings{CTT100406932,
  author = {K. Ogawa and K. Tomizawa and Y-T. Tan and My The Doan and Yu Ming Bin and Dim-Lee Kwong and S. Yamada and J. B. Cole and Y. Katayama and H. Mizuta and S. Oda},
  title = {Broadband Variable Chromatic Dispersion in Photonic-Band Electro-Optic Waveguide},
  booktitle = {OFC 2006},
  year = 2006,
}

@inproceedings{CTT100406934,
  author = {S. Oda and H. Mizuta},
  title = {Charge Storage and Electron/Light Emission Properties of Silicon Nanocrystals},
  booktitle = {E-MRS Spring Meeting},
  year = 2006,
}

@inproceedings{CTT100406936,
  author = {Hea Jeong Cheong and D. Hippo and A. Tanaka and K. Usami and Y. Tsuchiya and H. Mizuta and S. Oda},
  title = {Visible Electroluminescence from Size-Controlled Silicon Quantum Dots},
  booktitle = {CLEO/QELS 2006},
  year = 2006,
}

@inproceedings{CTT100406935,
  author = {D. Hippo and Y. Kawata and Y. Tsuchiya and H. Mizuta and S. Oda and K. Urakawa and N. Koshida},
  title = {Fabrication of Silicon 3D Photonic Crystal Structures in 100nm Scale Using Double Directional Etchings Method},
  booktitle = {CLEO/QELS 2006},
  year = 2006,
}

@inproceedings{CTT100599638,
  author = {Satoshi Higashijima and Yasuyoshi Kurokawa and Yoshishige Tsuchiya and Masakuni Okamoto and Hiroshi Mizuta and Shunri Oda},
  title = {Ab-initio Method of designing artificial quantum bits},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100599637,
  author = {Yasuyoshi Kurokawa and Satoshi Higashijima and Yoshishige Tsuchiya and Masakuni Okamoto and Hiroshi Mizuta and Shunri Oda},
  title = {Atomistic simulation of quantum transport in nanoscale silicon transistors},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100599636,
  author = {Satoshi Higashijima and Yasuyoshi Kurokawa and Yoshishige Tsuchiya and Masakuni Okamoto and Hiroshi Mizuta and Shunri Oda},
  title = {Ab-Initio Calculations of Electronic States in Nano-Crystalline Si Quantum Dots},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100591585,
  author = {SHUNRI ODA},
  title = {Formation, Characterization and Applications of Nanocrystalline Silicon Quantum Dots Prepared by VHF Plasma Processes},
  booktitle = {4th International Conference on the Physics of Dusty Plasmas, Orleans,招待講演},
  year = 2005,
}

@inproceedings{CTT100599635,
  author = {Yasuyoshi Kurokawa and Satoshi Higashijima and Yoshishige Tsuchiya and Masakuni Okamoto and Hiroshi Mizuta and Shunri Oda},
  title = {Electric States and Quantum Transport in Si Nanorod Transistors},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100599652,
  author = {黒川康良 and 東島賢 and 土屋良重 and 岡本政邦 and 水田博 and 小田俊理},
  title = {第一原理計算によるシリコンナノロッドの量子輸送シミュレーション},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100393750,
  author = {S. Higashijima and Y. Kurokawa and Y. Tsuchiya and M. Okamoto and H. Mizuta and S. Oda},
  title = {Ab-initio method of designing artificial quantum bits},
  booktitle = {Workshop on Modeling and Simulation of Electron Devices},
  year = 2005,
}

@inproceedings{CTT100540692,
  author = {S. Oda},
  title = {Nanocrystalline Silicon Quantum Dot Devices},
  booktitle = {AUN/SEED-Net Field Wise Seminar},
  year = 2005,
}

@inproceedings{CTT100540691,
  author = {S. Oda},
  title = {Nanocrystalline Silicon Quantum Dot Devices},
  booktitle = {International Conference on MEMS and Semiconductor Nanotechnology},
  year = 2005,
}

@inproceedings{CTT100540690,
  author = {S. Oda},
  title = {Nanocrystalline Silicon Quantum Dot Devices},
  booktitle = {9th Workshop and IEEE EDS Mini-colloquia on NAnometer CMOS Technology},
  year = 2005,
}

@inproceedings{CTT100540689,
  author = {S. Oda},
  title = {NeoSilicon: Nanometer scale control of materials in device application},
  booktitle = {Conference on Future Integrated Systems},
  year = 2005,
}

@inproceedings{CTT100540688,
  author = {A.Tanaka and G.Yamahata and Y.Tsuchiya and H.Mizuta and S.Oda},
  title = {Formation of Nanocrystalline Silicon Quantum Dot Arrays},
  booktitle = {12th International Conference on  COMPOSITES/NANO ENGINEERING},
  year = 2005,
}

@inproceedings{CTT100540687,
  author = {S. Oda},
  title = {Charge storage in silicon nanocrystals and device application},
  booktitle = {First International Workshop on Semiconductor Nanocrystals SEMINANO 2005},
  year = 2005,
}

@inproceedings{CTT100540686,
  author = {S. Oda},
  title = {Nanocrystalline Silicon Quantum Dot Devices},
  booktitle = {6th Workshop and IEEE EDS Mini-colloquia on NAnometer CMOS Technology},
  year = 2005,
}

@inproceedings{CTT100393761,
  author = {D. Hippo and Y. Kawata and Y. Tsuchiya and H. Mizuta and S. Oda and K. Urakawa and N. Koshida},
  title = {A New fabrication process of 3-dimensional full bandgap silicon photonic crystal structures at submicron scale},
  booktitle = {CLEO Europe EQEC 2005},
  year = 2005,
}

@inproceedings{CTT100393760,
  author = {D. Hippo and H-J. Chong and Y. Kawata and A. Tanaka and Y. Tsuchiya and H. Mizuta and S. Oda and K. Urakawa and N. Koshida},
  title = {A new design of nanocrystalline silicon optical devices based on 3-dimensional photonic crystal structures},
  booktitle = {2nd International Conference on Group IV Photonics},
  year = 2005,
}

@inproceedings{CTT100393756,
  author = {A. Surawijaya1 and H. Mizuta and S. Oda},
  title = {Room temperature negative differential conductance due to resonant tunneling through a single nanocrystalline-Si quantum dot},
  booktitle = {Solid State Devices and Materials Conference, Extended Abstracts},
  year = 2005,
}

@inproceedings{CTT100393752,
  author = {A.Tanaka and G.Yamahata and Y.Tsuchiya and K.Usami and H.Mizuta and S.Oda},
  title = {Assembly of Nanocrystalline Silicon Quantum Dots Based on a Colloidal Solution Method},
  booktitle = {5th IEEE Conference on Nanotechnology},
  year = 2005,
}

@inproceedings{CTT100393751,
  author = {S-Y. Huang and H. Mizuta and S. Oda},
  title = {Charge Operations of Nitrided Nanocrystalline Silicon Dot Memory Devices},
  booktitle = {China International Conference on Nanoscience and Technology},
  year = 2005,
}

@inproceedings{CTT100393748,
  author = {Y. Kurokawa and S. Higashijima and Y. Tsuchiya and M. Okamoto and H. Mizuta and S. Oda},
  title = {Atomistic simulation of quantum transport in nanoscale silicon transistors},
  booktitle = {Workshop on Modeling and Simulation of Electron Devices},
  year = 2005,
}

@inproceedings{CTT100393747,
  author = {Y. Kurokawa and S. Higashijima and Y. Tsuchiya and M. Okamoto and H. Mizuta and S. Oda},
  title = {Electronic States and Quantum Transport in Si Nanorod Transistors},
  booktitle = {IEEE Silicon Nanoelectrinics Workshop},
  year = 2005,
}

@inproceedings{CTT100393746,
  author = {S. Higashijima and Y. Kurokawa and Y. Tsuchiya and M. Okamoto and H. Mizuta and S. Oda},
  title = {Ab-Initio Calculations of Electronic States in Nano-Crystalline Si Quantam Dots},
  booktitle = {IEEE Silicon Nanoelectrinics Workshop},
  year = 2005,
}

@inproceedings{CTT100393745,
  author = {M. A. H. Khalafalla and H. Mizuta and S. Oda and Z. A. K. Durrani},
  title = {Variation of Electrostatic Coupling and Investigation of Single Electron Percolation Paths in Nanocrystalline Silicon Cross Transistors},
  booktitle = {IEEE Silicon Nanoelectrinics Workshop},
  year = 2005,
}

@inproceedings{CTT100393744,
  author = {G. Yamahata and A. Tanaka and Y. Kawata and Y.Tsuchiya and S. Saito and T. Arai and H. Mizuta and S. Oda},
  title = {Bottom-Up Fabrication of Si Nanodot Transistors Using the Nc-Si Dots Solution},
  booktitle = {IEEE Silicon Nanoelectrinics Workshop},
  year = 2005,
}

@inproceedings{CTT100393742,
  author = {S. Huang and H. Mizuta and S. Oda},
  title = {Charging-Storing-Discharging Processes in Nitrided Nanocrystalline Silicon Dots},
  booktitle = {IEEE Silicon Nanoelectrinics Workshop},
  year = 2005,
}

@inproceedings{CTT100393741,
  author = {T. Nagami and N.Momo and Y. Tsuchiya and S. Saito and T. Arai and T. Shimada and H. Mizuta and S. Oda},
  title = {Mechanical Property Analysis and Structural Optimization for NEMS Memory Devices},
  booktitle = {IEEE Silicon Nanoelectrinics Workshop},
  year = 2005,
}

@inproceedings{CTT100393739,
  author = {S. Oda},
  title = {Formation, Characterization and Applications of Nanocrystalline Silicon Quantum Dots Prepared by VHF Plasma Processes},
  booktitle = {4th International Conference on the Physics of Dusty Plasmas},
  year = 2005,
}

@inproceedings{CTT100393737,
  author = {M. Khalafalla and H. Mizuta and Z. A.K. Durrani and H. Ahmed and S. Oda},
  title = {Observation of Interdot Coupling Phenomena in Nanocrystalline Silicon  Point-Contact Structures},
  booktitle = {Second International Conference on Advanced Materials and Nanotechnology},
  year = 2005,
}

@inproceedings{CTT100393736,
  author = {A. Tanaka and Y. Tsuchiya and K. Usami and H. Mizuta and S. Oda},
  title = {High-Density Assembly of Nanocrystalline Silicon Quantum Dots},
  booktitle = {Second International Conference on Advanced Materials and Nanotechnology},
  year = 2005,
}

@inproceedings{CTT100393694,
  author = {鄭 仰東 and 土屋 良重 and 佐藤 大典 and 水田 博 and 小田 俊理},
  title = {HfO2薄膜成長過程の分光エリプソメトリによるその場観察と第一原理計算との比較},
  booktitle = {応用物理学会 シリコンテクノロジー分科会　第70回研究集会「ゲート絶縁膜の現状と課題 ? 誘電率と界面 ?」},
  year = 2005,
}

@inproceedings{CTT100393691,
  author = {Benjamin Pruvost and 小田俊理 and 水田　博},
  title = {ハイブリッドSET-MOS-NEMSシミュレーション用単電子トランジスタ解析モデル},
  booktitle = {第66回応用物理学会学術講演会},
  year = 2005,
}

@inproceedings{CTT100393690,
  author = {筆宝大平 and 浦川圭 and 川田善之 and 土屋良重 and 水田　博 and 越田信義 and 小田俊理},
  title = {磁場印加陽極酸化法を用いたシリコン3次元構造の作製},
  booktitle = {第66回応用物理学会学術講演会},
  year = 2005,
}

@inproceedings{CTT100393689,
  author = {小田俊理 and 水田博},
  title = {シリコン量子ドットデバイス},
  booktitle = {応用物理学会応用電子物性分科会研究会},
  year = 2005,
}

@inproceedings{CTT100393688,
  author = {池澤健太 and 土屋良重 and 宇佐美浩一 and 水田　博 and 小田俊理},
  title = {SiH4/H2/Arガス混合プラズマによるナノ結晶シリコンの作製と評価},
  booktitle = {第52回応用物理学関係連合講演会},
  year = 2005,
}

@inproceedings{CTT100393686,
  author = {永見　佑 and 百々信幸 and 土屋良重 and 斎藤慎一 and 新井　唯 and 嶋田壽一 and 水田　博 and 小田俊理},
  title = {歪みを考慮したNEMSメモリデバイスの高精度スイッチング動作解析},
  booktitle = {第52回応用物理学関係連合講演会},
  year = 2005,
}

@inproceedings{CTT100393678,
  author = {田中敦之 and 土屋良重 and 宇佐美浩一 and 水田　博 and 小田俊理},
  title = {分散溶媒を用いたナノ結晶シリコンドットの2次元集積化},
  booktitle = {第52回応用物理学関係連合講演会},
  year = 2005,
}

@inproceedings{CTT100393677,
  author = {S. Huang and K. Usami and Y. Tsuchiya and H. Mizuta and S. Oda},
  title = {Analysis of Combined Storage in Nitrided Nanocrystalline Silicon Dots},
  booktitle = {Extended Abstracts (The 52nd Spring Meeting, 2005); The Japan Society of Applied Physics and Related Societies},
  year = 2005,
}

@inproceedings{CTT100393672,
  author = {黒川康良 and 東島　賢 and 土屋良重 and 岡本政邦 and 水田　博 and 小田俊理},
  title = {第一原理計算によるシリコンナノロッドの量子輸送シミュレーション},
  booktitle = {第52回応用物理学関係連合講演会},
  year = 2005,
}

@inproceedings{CTT100393671,
  author = {山端元音 and 田中敦之 and 川田善之 and 土屋良重 and 斎藤真一 and 新井　唯 and 水田　博 and 小田俊理},
  title = {ナノ結晶Siドット分散溶液を用いたSiナノドットクラスタデバイスの作製},
  booktitle = {第52回応用物理学関係連合講演会},
  year = 2005,
}

@inproceedings{CTT100393669,
  author = {Mohammed Khalafalla and H. Mizuta and Zahid Durrani and S. Oda},
  title = {Variation of electrostatic coupling and investigation of current percolation paths in  novel nanocrystalline silicon cross transistors},
  booktitle = {Extended Abstracts (The 52nd Spring Meeting, 2005); The Japan Society of Applied Physics and Related Societies},
  year = 2005,
}

@inproceedings{CTT100393667,
  author = {藤田啓嗣 and 土屋良重 and 野平博司 and 水田　博 and 丸泉琢也 and 服部健雄 and 小田俊理},
  title = {角度分解X線光電子分光法によるPrシリケート／Si(100)界面近傍の深さ方向化学結合状態分析},
  booktitle = {第52回応用物理学関係連合講演会},
  year = 2005,
}

@inproceedings{CTT100393666,
  author = {鄭　仰東 and 土屋良重 and 佐藤大典 and 水田　博 and 小田俊理},
  title = {分光エリプソメトリによるHfO2薄膜成長過程のその場観察：第一原理計算との比較},
  booktitle = {第52回応用物理学関係連合講演会},
  year = 2005,
}

@inproceedings{CTT100393664,
  author = {筆宝大平 and 浦川　圭 and 土屋良重 and 水田　博 and 越田信義 and 小田俊理},
  title = {I可視域3次元シリコンフォトニック結晶の設計と作製プロセス},
  booktitle = {第52回応用物理学関係連合講演会},
  year = 2005,
}

@inproceedings{CTT100599646,
  author = {黒川康良 and 東島賢 and 土屋良重 and 岡本政邦 and 水田博 and 小田俊理},
  title = {第一原理シミュレーションによるシリコンナノロッドの電子状態解析},
  booktitle = {},
  year = 2004,
}

@inproceedings{CTT100599647,
  author = {東島賢 and 黒川康良 and 土屋良重 and 岡本政邦 and 水田博 and 小田俊理},
  title = {第一原理計算(SIESTA)を用いたナノ結晶Si量子ドットの電子状態解析},
  booktitle = {},
  year = 2004,
}

@inproceedings{CTT100599649,
  author = {東島賢 and 黒川康良 and 土屋良重 and 岡本政邦 and 水田博 and 小田俊理},
  title = {Ab-initio calculations of electronic states in Si nanodots and nanorods},
  booktitle = {},
  year = 2004,
}

@inproceedings{CTT100734089,
  author = {S. Oda},
  title = {Silicon quantum dot devices for future electronics},
  booktitle = {},
  year = ,
}

@misc{CTT100595284,
  author = {小田俊理},
  title = {ZnSの低抵抗化と表示素子への応用に関する研究},
  year = 1979,
}

@misc{CTT100573044,
  author = {水田博 and 佐藤　大典 and 土屋良重 and 小田俊理},
  title = {不揮発性半導体記憶装置},
  howpublished = {公開特許},
  year = 2007,
  month  = {},
  note   = {特願2006-074489(2006/03/17), 特開2007-250974(2007/09/27)}
}


@misc{CTT100573120,
  author = {小田俊理 and 水田博 and 筆宝　大平 and 越田　信義},
  title = {周期構造体およびその製造方法},
  howpublished = {登録特許},
  year = 2011,
  month  = {},
  note   = {特願2005-171213(2005/06/10), 特開2006-343671(2006/12/21), 特許第4734633号(2011/05/13)}
}




@phdthesis{CTT100595284,
  author = {小田俊理},
  title = {ZnSの低抵抗化と表示素子への応用に関する研究},
  school = {東京工業大学},
  year = 1979,
}