論文

• Tomoyuki Miyamoto, Takeo Kageyama, Shigeki Makino, Dietmar Schlenker, Fumio Koyama, Kenichi Iga. CBE and MOCVD growth of GaInNAs, J. Crystal Growth, Vol. 209, pp. 339-344, 2000.
• Takeo Kageyama, Tomoyuki Miyamoto, Shigeki Makino, Fumio Koyama, Kenichi Iga. Optical quality of GaNAs and GaInNAs and its dependence on RF cell condition in chemical beam epitaxy, J. Crystal Growth, Vol. 209, pp. 350-354, 2000.
• Yasuhiko Aoki, Yuji Shimada, Rogerio Jun Mizuno, Kenichi Iga. Two-dimensional alignment-free optical interconnect using micro optical bench scheme, Optical Review, Vol. 7, No. 1, pp. 54-57, 2000.
• Fumio Koyama, Dietmar Schlenker, Tomoyuki Miyamoto, Zhibiao Chen, Akihiro Matsutani, Takahiro Sakaguchi, Kenichi Iga. Data transmission over single-mode fiber by using 1.2-μm uncooled GaInAs-GaAs laser for Gbit/s local area network , IEEE Photon. Technol. Lett., Vol. 12, No. 2, pp. 125-127, 2000.
• Rogerio Jun Mizuno, Yasuhiko Aoki, Yuji Shimada, Kenichi Iga. A bidirectional optical module based on stacked planar optical circuit , Jpn. J. Appl. Phys., Vol. 39, No. 3B, pp. 1522-1528, 2000.
• Yasuhiko Aoki, Rogerio Jun Mizuno, Yuji Shimada, Kenichi Iga. Fundamental study of parallel moduling scheme based on micro-optical bench and collimating planar microlenses, Jpn. J. Appl. Phys., Vol. 39, No. 3B, pp. 1529-1532, 2000.
• Takeo Katayama, Takanori Takahashi, Kenichi Iga. Optical pattern recognition experiments of walsh spatial frequency domain filtering method, Jpn. J. Appl. Phys., Vol. 39, No. 3B, pp. 1576-1581, 2000.
• Takanori Takahashi, Takeo Katayama, Kenichi Iga. Optical pattern recognition system based on parallel spatial filtering using synthetic discriminant function, Jpn. J. Appl. Phys., Vol. 39, No. 3B, pp. 1571-1575, 2000.
• Akihiro Matsutani, Hideo Ohtsuki, FUMIO KOYAMA, Kenichi Iga. Plasma Diagnostics in Inductively Coupled Plasma Etching Using Cl2/Xe, Jpn. J. Appl. Phys., Vol. 39, No. 3A, pp. 1435-1436, Mar. 2000.
• Fumio Koyama, Takeru Amano, Noriyoshi Furukawa, Nobuhiko Nishiyama, Masakazu Arai, Kenichi Iga. Micromachined semiconductor vertical cavity for temperature insensitive surface emitting lasers and optical filters, Jpn. J. Appl. Phys., Vol. 39, No. 3B, pp. 1542-1545, 2000.
• Takeru Amano, Fumio Koyama, Nobuhiko Nishiyama, Kenichi Iga. Temperature-insensitive micromachined AlGaAs-GaAs vertical cavity filter, IEEE Photon. Technol. Lett., Vol. 12, No. 5, pp. 510-512, 2000.
• Maiko Ariga, Yushi Sekido, Atsushi Sakai, Toshihiko Baba, Akihiro Matsutani, Fumio Koyama, Kenichi Iga. Low threshold GaInAsP lasers with semiconductor/air distributed Bragg reflector fabricated by inductively coupled plasma etching, Jpn. J. Appl. Phys., Vol. 39, No. 6A, pp. 3406-3409, 2000.
• Masakazu Arai, Nobuhiko Nishiyama, Satoshi Shinada, Akihiro Matsutani, Fumio Koyama, Kenichi Iga. Vertical-cavity surface-emitting laser array on GaAs(311)B substrate exhibiting single-transverse mode and stable-polarization operation, Jpn. J. Appl. Phys., Vol. 39, No. 6B, pp. L588-590, 2000.
• Nobuhiko Nishiyama, Masakazu Arai, Satoshi Shinada, Kouichi Suzuki, Fumio Koyama, Kenichi Iga. Multi-oxide layer structure for single-mode operation in vertical-cavity surface-emitting lasers, IEEE Photon. Technol. Lett., Vol. 12, No. 6, pp. 606-608, 2000.
• Shigeaki Sekiguchi, Tomoyuki Miyamoto, Tadayoshi Kimura, Gen Okazaki, Fumio Koyama, Kenichi Iga. Improvement of current injection uniformity and device resistance in long-wavelength vertical-cavity surface-emitting laser using a tunnel junction , Jpn. J. Appl. Phys., Vol. 39, No. 7A, pp. 3997-4001, 2000.
• Takeru Amano, Fumio Koyama, Nobuhiko Nishiyama, Kenichi Iga. 2x2 multiwavelength micromachined AlGaAs/GaAs vertical cavity filter array with wavelength control layer, Jpn. J. Appl. Phys., Vol. 39, No. 7A, pp. L673-674, 2000.
• Masao Kawaguchi, Eric Gouardes, Dietmar Schlenker, Takashi Kondo, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga. Low threshold current density operation of GaInNAs quantum well lasers grown by metalorganic chemical vapour deposition , Electron. Lett., Vol. 36, No. 21, pp. 1776-1777, 2000.
• Dietmar Schlenker, Tomoyuki Miyamoto, Zhibiao Chen, Masao Kawaguchi, Takashi Kondo, Eric Gouardes, Jochen Gemmer, Chiristian Gemmer, Fumio Koyama, Kenichi Iga. Inclusion of strain effect in miscibility gap calculations for III-V semiconductors, Jpn. J. Appl. Phys., Vol. 39, No. 10, pp. 5751-5757, 2000.
• Akihiro Matsutani, Hideo Ohtsuki, Fumio Koyama, Kenichi Iga. Emission spectrochemical analysis in dry etching process of InP by Cl₂- inductively coupled plasma, Jpn. J. Appl. Phys., Vol. 39, No. 10, pp. 6109-6110, 2000.
• Satoshi Shinada, Fumio Koyama, Nobuhiko Nishiyama, Masakazu Arai, Akihiro Matsutani, Kenya Goto, Kenichi Iga. Optical near field by vertical cavity surface emitting laser, Trans. IEICE, Vol. J83-C, No. 9, pp. 826-833, 2000.
• Masao Kawaguchi, Tomoyuki Miyamoto, Eric Gouardes, Dietmar Schlenker, Takashi Kondo, Fumio Koyama, Kenichi Iga. Optical quality dependence on growth rate for metalorganic chemical vapor deposition grown GaInNAs/GaAs, Jpn. J. Appl. Phys., Vol. 39, No. 12A, pp. L1219-L1220, 2000.
• Takeshi Yamatoya, Fumio Koyama, Kenichi Iga. Noise suppression and intensity modulation in gain-saturated semiconductor optical amplifiers and its application to spectrum-sliced light sources, Jpn. J.Appl. Phys., Vol. 39, pp. L861-L863, 2000.
• Kenichiro Takeuchi, Akihiro Matsutani, Fumio Koyama, Kenichi Iga. Improvement of AlAs selective oxidation process for GaAs/GaAlAs vertical cavity surface emitting lasers and their single-mode lasing characteristics, Trans. IEICE, Vol. J83-C, No. 9, 904-907, 2000.
• Shunichi Sato, Nobuhiko Nishiyama, Tomoyuki Miyamoto, T. Takahashi, N. Jikutani, Masakazu Arai, Akihiro Matsutani, Fumio Koyama, Kenichi Iga. Continuous wave operation of 1.26 μm GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition, Electron. Lett., Vol. 36, No. 24, pp. 2018-2019, 2000.
• *Kenichi Iga. Surface emitting laser-its birth and generation of new optoelectronics field, IEEE J. Select. Top. Quantum Electron., 6, No. 6, 2000.
• Michinori Irikawa, Takuya Ishikawa, Toru Fukushima, Hitoshi Shimizu, Akihiko Kasukawa, Kenichi Iga. Improved theory for carrier leakage and diffusion in multiquantum-well semiconductor lasers, Jpn. J. Appl. Phys., 39, 4A, pp. 1730-1737, 2000.
• Dietmar Schlenker, Tomoyuki Miyamoto, Zhibiao Chen, Masao Kawaguchi, Takashi Kondo, Eric Gouardes, Fumio Koyama, Kenichi Iga. Critical layer thickness of 1.2-μ;m highly strained GaInAs/GaAs quantum wells, J. Crystal Growth, Vol. 221, 503-508, 2000.
• Shigeki Makino, Tomoyuki Miyamoto, Takeo Kageyama, Nobuhiko Nishiyama, Fumio Koyama, Kenichi Iga. GaInNAs/GaAs quantum dots grown by chemical beam epitaxy, J. Crystal Growth, 221, 561-565, 2000.
• Nobuhiko Nishiyama, Masakazu Arai, Satoshi Shinada, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga. Growth and optical properties of highly strained GaInAs/GaAs quantum wells on (311)B GaAs by MOCVD, J. Crystal Growth, 221, 530-534, 2000.
• S. Makino, T. Miyamoto, T. Kageyama, F. Koyama, K. Iga. GaInNAs/GaAs Quantum Dots Grown by Chemical Beam Epitaxy, The 10th International Conference on Metalorganic Vapor Phase Epitaxy, No. We-P28, 2000.
• F. Koyama, D. Schlenker, S. Nishiyama, T. Miyamoto, K. Iga. Highly strained GaInAs/GaAs quantum well lasers emitting at μm wavelength, Frontier Science Research Conf., No. Invited Paper, 2000.
• *Kenichi Iga. Surface emitting laser-its birth and generation of new optoelectronics field, IEEE J. Select. Top. Quantum Electron., 6, No. 6, 2000.
• Kenichi Iga. Vertical-Cavity Surface-Emitting Laser (VCSEL), Proc. IEEE, invited paper, IEEE, Vol. 101, No. 10, pp. 2229-2232, Oct. 2013.
• Y. Suematsu, K. Iga. Lasers in Photonics, IEEE JLT, 26, 9, pp. 1132-1144, May 2008.
• Kenichi Iga. Vertical cavity surface emitting lasers photonics, Jpn. J. Appl. Phys., vol. 45, no. 8B, pp. 6541-6543, Aug. 2006.
• 伊賀健一. 面発光レーザー その発端と発展, 応用物理, Vol. 75, No. 7, pp. 820-823, July 2006.
• Kenichi Iga. Optical Resonators, Handbook of Optical Components and Engineering, 2003.
• Kenichi Iga. Introduction to Nanotechnology, Journal of IEICE, vol. 85, no. 11, pp. 784-787, Nov. 2002.
• 坂口 孝浩, 小山 二三夫, 伊賀 健一. GaN系青色面発光レーザ用共振器の形成と評価, 日本結晶成長学会誌, Vol. 29, No. 2, p. 143, Aug. 2002.
• Eric Gouardes, Tomoyuki Miyamoto, Masao Kawaguchi, Takashi Kondo, FUMIO KOYAMA, Kenichi Iga. GaInAs/GaInNAs/GaInAs intermediate layer structure for long wavelength lasers, IEEE Photon. Technol. Lett., vol. 14, no. 7, pp. 896-898, July 2002.
• Kenichi Iga. Vertical-Cavity Surface-Emitting Laser - Progress and Prospects -, Trans. IEICE Transaction on Electronics, vol. E-85-C, no. 1, pp. 10-20, June 2002.
• Kenichi Iga. Measurement of plasma density for control of etching profile in inductively coupled plasma etching of InP, Jpn. J. Appl. Phys., vol. 41, no. 5A, pp. 3147-3148, May 2002.
• Akihiro Matsutani, Hideo Ohtsuki, FUMIO KOYAMA, Kenichi Iga. Measurement of Plasma Density for Control of Etching Profile in Inductively Coupled Plasma Etching of InP, Jpn. J. Appl. Phys., Vol. 41, No. 5A, pp. 3147-3148, May 2002.
• Masao Kawaguchi, Tomoyuki Miyamoto, Eric Gouardes, Takashi Kondo, FUMIO KOYAMA, Kenichi Iga. Photoluminescence dependence on heterointerface for metalorganic chemical vapor deposition grown GaInNAs/GaAs quantum wells, Appl. Phys. Lett., vol. 80, no. 6, pp. 962-964, Feb. 2002.
• Shigeki Makino, Tomoyuki Miyamoto, Takeo Kageyama, Yoshihiko Ikenaga, FUMIO KOYAMA, Kenichi Iga. Nitrogen composition and growth temperature dependence of growth characteristics for self-assembled GaInNAs/Gas quantum dots by chemical beam epitaxy, Jpn. J. Appl. Phys., vol. 41, no. 2B, pp. 953-957, Feb. 2002.
• Masao Kawaguchi, Tomoyuki Miyamoto, Eric Gouardes, Shugo Minobe, Takashi Kondo, FUMIO KOYAMA, Kenichi Iga. Photoluminescence and lasing characteristics of GaInNAs quantum wells using GaInAs intermediate layers, Jpn. J. Appl. Phys., vol. 41, no. 2B, pp. 1034-1039, Feb. 2002.
• Yoshihiko Ikenaga, Tomoyuki Miyamoto, Shigeki Makino, Takeo Kageyama, Masakazu Arai, FUMIO KOYAMA, Kenichi Iga. 1.4 μm GaInNAs/GaAs quantum well laser grown by chemical beam epitaxy, Jpn. J. Appl. Phys., vol. 41, no. 2A, pp. 664-665, Feb. 2002.
• Kenichi Iga. Vertical-cavity surface emitting laser -- progress and prospects --, Trans. IEICE, vol. E85-C, no. 1, pp. 10-20, Jan. 2002.
• Kenichi Iga. Vertical-Cavity Surface-Emitting Laser: Introduction and Review, Vertical-Cavity Surface-Emitting Laser Devices, Springer, pp. 1-30, Jan. 2002.
• Takeo Kageyama, Tomoyuki Miyamoto, Shigeki Makino, Yoshihiko Ikenaga, FUMIO KOYAMA, Kenichi Iga. Temperature characteristics of λ=1.3μm GaInNAs/GaAs quantum well lasers grown by chemical beam epitaxy, Trans. IEICE, vol. E85-C, no. 1, Jan. 2002.
• Kenichi Iga. Surface emitting laser - its history and prospect, The Review of Laser Eng., vol. 29, no. 12, pp. 768-772, Dec. 2001.
• Yasuhiko Aoki, Yuji Shimada, Fumio Koyama, Kenichi Iga. 2-Dimensional parallel optical interconnect module formation based on micro-optical bench concept, Trans. IEICE, vol. J84-C, no. 9, pp. 807-813, Dec. 2001.
• Shigeki Makino, Tomoyuki Miyamoto, Takeo Kageyama, Yoshihiko Ikenaga, Masakazu Arai, FUMIO KOYAMA, Kenichi Iga. Composition dependence of thermal annealing effect on 1.3μm range GaInNAs/GaAs quantum well lasers grown by chemical beam epitaxy, Jpn. J. Appl. Phys., vol. 40, no. 11B, pp. L1211-L1213, Nov. 2001.
• Tomoyuki Miyamoto, FUMIO KOYAMA, KENICHI IGA. Tunnel junction for long-wavelength vertical-cavity surface-emitting lasers, Jpn. J. Appl. Phys., vol. 40, no. 10, pp. 5909-5913, Oct. 2001.
• Ayako Murakami, Shigeaki Sekiguchi, Takahiro Sakaguchi, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga. Proposal of optically pumped tunable surface emitting laser, Jpn. J. Appl. Phys., vol. 40, no. 9A/B, pp. L935-L936, Sept. 2001.
• 鈴木耕一, 小山二三夫, 伊賀健一. 微小コーナ反射鏡の有限要素法解析とその光デバイスへの応用, 電子情報通信学会論文誌, vol. J84-C, no. 8, pp. 660-665, Aug. 2001.
• Masakazu Arai, Nobuhiko Nishiyama, Munechika Azuchi, Akihiro Matsutani, Fumio Koyama, Kenichi Iga. Monolithic formation of metal organic chemical vapor deposition grown multi-wavelength vertical cavities with highly strained GaInAs/GaAs quantum wells on GaAs (311)B, Jpn. J. Appl. Phys, Vol. 40, No. 6A, pp. 4056-4057, June 2001.
• Nobuhiko Nishiyama, Masakazu Arai, Satoshi Shinada, Munechika Azuchi, Akihiro Matsutani, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga. 1.12μm polarization controlled highly strained GaInAs vertical-cavity surface-emitting lasers on GaAs (311)B by metal organic chemical vapor deposition, Jpn. J. Appl. Phys., vol. 40, no. 5A, pp. L437-L439, May 2001.
• Akihiro Matsutani, Hideo Ohtsuki, FUMIO KOYAMA, Kenichi Iga. Mass Effect of Etching Gases in Vertical and Smooth Dry Etching of InP, Jpn. J. Appl. Phys., Vol. 40, No. 3A, pp. 1528-1529, Mar. 2001.
• Takashi Kondo, Dietmar Schlenker, Tomoyuki Miyamoto, Zhibiao Chen, Masao Kawaguchi, Eric Gouardes, FUMIO KOYAMA, Kenichi Iga. Lasing characteristics of 1.2μm highly strained GaInAs/GaAs quantum well lasers, Jpn. J. Appl. Phys., vol. 40, no. 2A, pp. 467-471, Feb. 2001.
• Masakazu Arai, Nobuhiko Nishiyama, Munechika Azuchi, Akihiro Matsutani, Fumio Koyama, Kenichi Iga. Monolithic formation of metal organic chemical vapor deposition grown multi-wavelength vertical cavities with highly strained GaInAs/GaAs quantum wells on GaAs (311)B, Jpn. J. Appl. Phys., Vol. 40, No. 6A, pp. 4056-4057, 2001.
• Dietmar Schlenker, Tomoyuki Miyamoto, Zhibiao Chen, Masao Kawaguchi, Takashi Kondo, Eric Gouardes, FUMIO KOYAMA, Kenichi Iga. Critical layer thickness of 1.2-μm highly strained GaInAs/GaAs quantum wells, J. Crystal Growth, vol. 221, pp. 503-508, Dec. 2000.
• Nobuhiko Nishiyama, Masakazu Arai, Satoshi Shinada, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga. Growth and optical properties of highly strained GaInAs/GaAs quantum wells on (311)B GaAs by MOCVD, J. Crystal Growth, vol. 221, pp. 530-534, Dec. 2000.
• Akihiro Matsutani, Hideo Ohtsuki, FUMIO KOYAMA, Kenichi Iga. Emission Spectrochemical Analysis in Dry Etching Process of InP by Cl2 Inductively Coupled Plasma, Jpn. J. Appl. Phys., Vol. 39, No. 10, pp. 6109-6110, Oct. 2000.
• Nobuhiko Nishiyama, Masakazu Arai, Satoshi Shinada, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga. 1.15μm lasing operation of highly strained GaInAs/GaAs on GaAs (311)B substrate with high characteristic temperature (T₀=210 K), Jpn. J. Appl. Phys., vol. 39, no. 10B, pp. L1046-L1047, Oct. 2000.
• Shunichi Sato, Nobuhiko Nishiyama, Tomoyuki Miyamoto, Takashi Takahashi, Naoto Jikutani, Masakazu Arai, Akihiro Matsutani, Fumio Koyama, Kenichi Iga. Continuous wave operation of 1.26μm GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition, Electron. Lett., vol. 36, no. 24, pp. 2018-2019, Oct. 2000.
• Masakazu Arai, Nobuhiko Nishiyama, Satoshi Shinada, Akihiro Matsutani, Fumio Koyama, Kenichi Iga. Highly stable single polarization operation of GaInAs/GaAs vertical-cavity surface-emitting laser on GaAs (311)B substrate under high-speed modulation, Jpn. J. Appl. Phys., Vol. 39, No. 8B, pp. L858-L860, Aug. 2000.
• Takeru Amano, Fumio Koyama, Nobuhiko Nishiyama, Kenichi Iga. 2X2 multiwavelength micromachined AlGaAs/GaAs vertical cavity filter array with wavelength control layer, Jpn. J. Appl. Phys., Vol. 39, No. 7A, pp. L673-L674, July 2000.
• Masakazu Arai, Nobuhiko Nishiyama, Satoshi Shinada, Akihiro Matsutani, Fumio Koyama, Kenichi Iga. Vertical-cavity surface-emitting laser array on GaAs(311)B substrate exhibiting single-transverse mode and stable-polarization operation, Jpn. J. Appl. Phys., Vol. 39, No. 6B, pp. L588-L590, June 2000.
• Nobuhiko Nishiyama, Masakazu Arai, Satoshi Shinada, Koichi Suzuki, Fumio Koyama, Kenichi Iga. Multi-oxide layer structure for single-mode operation in vertical-cavity surface-emitting lasers, IEEE Photon. Technol. Lett., Vol. 12, No. 6, pp. 606-608, June 2000.
• Masakazu Arai, Nobuhiko Nishiyama, Satoshi Shinada, Fumio Koyama, Kenichi Iga. AlAs oxidation system with H₂O vaporizer for oxide-confined surface emitting lasers, Jpn. J. Appl. Phys., Vol. 39, No. 6A, pp. 3468-3469, June 2000.
• Takeru Amano, Fumio Koyama, Nobuhiko Nishiyama, Kenichi Iga. Temperature-insensitive micromachined AlGaAs-GaAs vertical cavity filter, IEEE Photon. Technol. Lett., Vol. 12, No. 5, pp. 510-512, May 2000.
• Fumio Koyama, Takeru Amano, Noriyoshi Furukawa, Nobuhiko Nishiyama, Masakazu Arai, Kenichi Iga. Micromachined semiconductor vertical cavity for temperature insensitive surface emitting lasers and optical filters, Jpn. J. Appl. Phys., Vol. 39, No. 3B, pp. 1542-1545, Mar. 2000.
• Dietmar Schlenker, Tomoyuki Miyamoto, Zhibiao Chen, FUMIO KOYAMA, Kenichi Iga. Growth of highly strained GaInAs/GaAs quantum wells for 1.2μm wavelength lasers, J. Crystal Growth, vol. 209, pp. 27-36, Jan. 2000.
• Takeru Amano, Fumio Koyama, Noriyoshi Furukawa, Nobuhiko Nishiyama, Akihiro Matsutani, Kenichi Iga. Micromachined AlGaAs/GaAs vertical cavity filter with adjustable temperature dependence and wavelength trimming ability, Electron. Lett., Vol. 36, No. 1, pp. 74-76, Jan. 2000.
• Tomoyuki Miyamoto, Kanji Takeuchi, Takeo Kageyama, FUMIO KOYAMA, Kenichi Iga. Chemical beam epitaxy of GaInNAs/GaAs quantum wells and its optical absorption property, J. Crystal Growth, vol. 197, pp. 67-72, Dec. 1999.
• Dietmar Schlenker, Tomoyuki Miyamoto, Zhong Pan, FUMIO KOYAMA, Kenichi Iga. Miscibility gap calculation for Ga_{<small>1-x</small>}In_{<small>x</small>}N_{<small>y</small>}As_{<small>1-y</small>} including strain effects, J. Crystal Growth, vol. 196, pp. 67-70, Dec. 1999.
• Satoshi SHINADA, Fumio KOYAMA, Nobuhiko NISHIYAMA, Masakazu ARAI, Kenya GOTO, Kenichi IGA. Fabrication of micro-aperture surface emitting laser for near field optical data storage, Jpn. J. Appl. Phys., Vol. 38, No. 11B, pp. L198～L200, Nov. 1999.
• Toshihiko Baba, Kyoji Inoshita, Hiroko Tanaka, Jun Yonekura, Maiko Ariga, Akihiro Matsutani, Tomoyuki Miyamoto, FUMIO KOYAMA, Kenichi Iga. Strong enhancement of light extraction efficiency in GaInAsP 2-D-arranged microcolumns, IEEE J. Lightwave Tech., vol. 17, no. 11, pp. 2113-2120, Nov. 1999.
• Zhibiao Chen, Dietmar Schlenker, Tomoyuki Miyamoto, Takashi Kondo, Masao Kawaguchi, FUMIO KOYAMA, Kenichi Iga. High temperature characteristics of near 1.2μm InGaAs/AlGaAs lasers, Jpn. J. Appl. Phys., vol. 38, no. 10B, pp. L1178-L1179, Oct. 1999.
• Shigeaki Sekiguchi, Tomoyuki Miyamoto, Tadayoshi Kimura, FUMIO KOYAMA, Kenichi Iga. Self-aligned current confinement structure using AlAs/InP tunnel junction in GaInAsP/InP semiconductor lasers, Appl. Phys. Lett., vol. 75, no. 11, pp. 1512-1514, Sept. 1999.
• Dietmar Schlenker, Zhong Pan, Tomoyuki Miyamoto, FUMIO KOYAMA, Kenichi Iga. Effect of surface quality on overgrowth of highly strained GaInAs/GaAs quantum wells and improvement by a strained buffer layer, Jpn. J. Appl. Phys., vol. 38, no. 9A, pp. 5023-5027, Sept. 1999.
• Dietmar Schlenker, Tomoyuki Miyamoto, Zhibiao Chen, FUMIO KOYAMA, Kenichi Iga. 1.17μm highly strained GaInAs-GaAs quantum-well laser, IEEE Photon. Technol. Lett., vol. 11, no. 8, pp. 946-948, Aug. 1999.
• Akihiro Matsutani, FUMIO KOYAMA, Hideo Ohtsuki, Kenichi Iga. Vertical and Smooth Etching of InP by Cl2/Xe Inductively Coupled Plasma, Jpn. J. Appl. Phys., Vol. 38, No. 7A, pp. 4260-4261, July 1999.
• FUMIO KOYAMA, Dietmar Schlenker, Tomoyuki Miyamoto, Zhibiao Chen, Akihiro Matsutani, Takahiro Sakaguchi, Kenichi Iga. 1.2μm highly strained GaInAs/GaAs quantum well lasers for singlemode fibre datalink, Electron. Lett., vol. 35, no. 13, pp. 1079-1081, June 1999.
• Shigeaki Sekiguchi, Tadayoshi Kimura, Tomoyuki Miyamoto, FUMIO KOYAMA, Kenichi Iga. Long wavelength GaInAsP lasers with n-n contacts using AlAs/InP hole injecting tunnel junction, Jpn. J. Appl. Phys., vol. 38, no. 4B, pp. L443-L445, Apr. 1999.
• Takeo Kageyama, Tomoyuki Miyamoto, Shigeki Makino, FUMIO KOYAMA, Kenichi Iga. Thermal annealing of GaInNAs/GaAs quantum wells grown by chemical beam epitaxy and its effect upon photoluminescence, Jpn. J. Appl. Phys., vol. 38, no. 3B, pp. L298-L300, Mar. 1999.
• Zhong Pan, Tomoyuki Miyamoto, Dietmar Schlenker, FUMIO KOYAMA, Kenichi Iga. Quality improvement of GaInNAs/GaAs quantum well growth by metalorganic chemical vapor deposition using tertiarybutylarsine, Jpn. J. Appl. Phys., vol. 38, no. 2B, pp. 1012-1014, Feb. 1999.
• Tomoyuki Miyamoto, Shunichi Sato, Zhong Pan, Dietmar Schlenker, FUMIO KOYAMA, Kenichi Iga. GaNAs/GaInAs short-period superlattice quantum well structures grown by MOCVD using TBAs and DMHy, J. Crystal Growth, vol. 195, Dec. 1998.
• Akihiro Matsutani, FUMIO KOYAMA, Kenichi Iga. Low Bias Voltage Dry Etching of InP by Inductively Coupled Plasma Using SiCl4/Ar, Jpn. J. Appl. Phys., Vol. 37, No. 12A, pp. 6655-6656, Dec. 1998.
• T. Honda, A. Inoue, M. Mori, T. Shirasawa, N. Mochida, K. Saotome, T. Sakaguchi, A. Ohtomo, M. Kawasaki, H. Koinuma, F. Koyama, K. Iga. GaN growth on ozonized sapphire(0001) substrates by MOVPE, J. Crystal Growth, Vol. 195, No. 1-4, pp. 319-322, Dec. 1998.  公式リンク  
  
• Akihiro Matsutani, FUMIO KOYAMA, Kenichi Iga. C60 Resist Mask of Electron Beam Lithography for Chlorine-Based Reactive Ion Beam Etching, Jpn. J. Appl. Phys., Vol. 37, No. 7, pp. 4211-4212, July 1998.
• Nobuhiko Nishiyama, Akimasa Mizutani, Nobuaki Hatori, Fumio Koyama, Kenichi Iga. A completely single-mode and single polarization vertical-cavity surface emitting lasers grown on GaAs (311)B substrate, Jpn. J. Appl. Phys., vol. 37, no. 6A, pp. L640-L642, July 1998.
• Akihiro Matsutani, FUMIO KOYAMA, Kenichi Iga. Plasma Characterization in Chlorine-Based Reactive Ion Beam Etching and Chemically Assisted Ion Beam Etching, Jpn. J. Appl. Phys., Vol. 37, No. 5A, pp. 2747-2751, May 1998.
• Kenichi Iga. 面発光レーザ, 電子情報通信学会論文誌, Vol. J81-C-1, No. 9, pp. 483-493, 1998.
• Tomoyuki Miyamoto, Kanji Takeuchi, FUMIO KOYAMA, Kenichi Iga. Novel GaInNAs/GaAs quantum well structure for long wavelength semiconductor lasers, IEEE Photon. Technol. Lett., vol. 9, no. 11, Nov. 1997.
• Akimasa Mizutani, Nobuaki Hatori, Nobuhiko Nishiyama, FUMIO KOYAMA, Kenichi Iga. MOCVD grown InGaAs/GaAs vertical cavity surface emitting laser on GaAs (311)B substrate, Electronics Letters, Vol. 33, No. 22, pp. 1877-1878, Oct. 1997.
• Akimasa Mizutani, Nobuaki Hatori, Ohnoki, N, Nobuhiko Nishiyama, Ohtake, N, FUMIO KOYAMA, Kenichi Iga. P-type AlAs growth on a GaAs (311)B substrate using carbon auto-doping for low resistance GaAs/AlAs distributed Bragg reflectors, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, Vol. 36, No. 11, pp. 6728-6729, Aug. 1997.
• Hatori, N, Mizutani, A, Nobuhiko Nishiyama, Koyama, F, Iga, K. Threshold reduction of p-type delta-doped InGaAs/GaAs quantum well lasers by using auto-doping of carbon, Electronics Letters, Vol. 33, No. 12, pp. 1096-1097, June 1997.
• Kentaro Nakamura, Yasuto Uno, Kenichi Iga. Sound field measurements by a sharply bent optical fiber, Journal of Acoustical Society of Japan(E), vol. 17, no. 1, pp. 45-47, 1996.  公式リンク  
  
• Akihiro Matsutani, FUMIO KOYAMA, Kenichi Iga. Surface Temperature Increase in Reactive Ion Beam Etch and Improvement of Profiles by Multistep Etching, Jpn. J. Appl. Phys., Vol. 34, No. 4A, pp. 2053-2054, Apr. 1995.
• Akihiro Matsutani, FUMIO KOYAMA, Kenichi Iga. Three-dimensional electron probe roughness analysis of InP sidewalls processed by reactive ion beam etching, Applied Physics Letters, Vol. 66, No. 1, pp. 64-66, Jan. 1995.
• K. Iga, F. Koyama. Surface Normal Optical Devices and Related Packaging Technologies, Journal of Japan Inst for Interconnecting and Packaging Electronic Circuits, Vol. 10, No. 5, pp. 351-354, 1995.
• Akihiro Matsutani, FUMIO KOYAMA, Kenichi Iga. Measurement of Sidewall Roughness of InP Etched by Reactive Ion Beam Etching, Jpn. J. Appl. Phys., Vol. 33, No. 12A, pp. 6737-6738, Dec. 1994.
• Yuichi Inaba, Takashi Uchida, Noriyuki Yokouchi, Tomoyuki Miyamoto, Kenichi Mori, FUMIO KOYAMA, Kenichi Iga. Growth of GaInAs(P)/InP multi-quantum barrier (MQB) by chemical beam epitaxy, J. Crystal Growth, vol. 136, pp. 297-301, Dec. 1994.
• KENICHI IGA. Surface emitting lasers, Optoelectronics - Devices and Technologies, Vol. 9, No. 2, pp. 167-176, 1994.
• T. Baba, Y. Yogo, K. Suzuki, F. Koyama, K. Iga. Continuous wave GaInAsP/InP Surface emitting laser with a thermally conductive MgO/Si multilayer mirror, Jpn. J. Appl. Phys., Vol. 33, No. 4A, pp. 1905-1909, 1994.
• K. Iga, T. Baba. Self aligned fiber micro connectors, 11th Gradient-Index Optical Systems Topical Meeting, No. GWC2, 1994.
• T.Baba, Y.Yogo, K.Suzuki, F.Koyama, K.Iga. First Room Temperature CW Operation of GaInAsP/InP Surface Emitting Laser, IEICE Trans. Electronics, vol. E76-C, no. 9, pp. 1423-1424, Sept. 1993.
• Noriyuki Yokouchi, Tomoyuki Miyamoto, Takashi Uchida, Yuichi Inaba, FUMIO KOYAMA, Kenichi Iga. 40å continuous tuning of a GaInAsP/InP vertical-cavity surface-emitting laser using an external mirror, IEEE Photon. Technol. Lett., vol. 4, July 1992.
• Akihiro Matsutani, FUMIO KOYAMA, Kenichi Iga. Characterization of Sidewall Damage Induced by Reactive Ion-Beam Etching, Jpn. J. Appl. Phys., Vol. 31, No. 5A, pp. 1541-1544, May 1992.
• KENICHI IGA. Surface Emitting Lasers and Parallel Operating Devices-Fundamentals and Prospects-, IEICE Trans. Fundamentals, Vol. E75-A, pp. 1, 1992.
• Tomoyuki Miyamoto, FUMIO KOYAMA, KENICHI IGA. Ultra-thin GaAs/InP layer growth by chemical beam epitaxy, J. Electronic Materials, vol. 20, no. 12, Dec. 1991.
• Akihiro Matsutani, FUMIO KOYAMA, Kenichi Iga. Reactive Ion Beam Etch of GaInAsP/InP Multilayer and Removal of Damaged Layer by Two-Step Etch, Jpn. J. Appl. Phys., Vol. 30, No. 9A, pp. 2123-2126, Sept. 1991.
• Takemasa Tamanuki, Fumio Koyama, Kenichi Iga. Estimation of threshold current of microcavity surface emitting laser with cylindrical waveguide, Japanese Journal of Applied Physics, vol. 30, no. 4A, pp. L593-L595, Apr. 1991.
• Takemasa Tamanuki, Fumio Koyama, Kenichi Iga. Ammonium sulfide passivation for AlGaAs/GaAs buried hetero-structure laser fabrication process, Japanese Journal of Applied Physics, vol. 30, no. 3, pp. 499-500, Mar. 1991.
• Toshi K. Uchida, Takashi Uchida, Noriyuki Yokouchi, Fumio Koyama, Kenichi Iga. GaInAs/InP wells and strained-layer superlattices grown by chemical beam epitaxy, Japanese Journal of Applied Physics, vol. 30, no. 2B, pp. L228-L230, Feb. 1991.
• Akihiro Matsutani, FUMIO KOYAMA, Kenichi Iga. Microfabrication of Dielectric Multilayer Reflector by Reactive Ion Etching and Characterization of Induced Wafer Damage, Jpn. J. Appl. Phys., Vol. 30, No. 2, pp. 428-429, Feb. 1991.
• KENICHI IGA. Design and Phololuminescence Study on a Multiquantum Barrier, IEEE J. of Quantum Electron., Vol. 27, pp. 6, 1991.
• Toshi K. Uchida, Takashi Uchida, Noriyuki Yokouchi, Fumio Koyama, Kenichi Iga. Highly beryllium-doped GaInAs grown by chemical beam epitaxy, Japanese Journal of Applied Physics, Vol. 29-2, No. 12, pp. L2146-L2148, Dec. 1990.
• E Ho, F. Koyama, K. Iga. Effective reflectivity from self-imaging in a Talbot cavity and its effect on the threshold of a finite 2-D surface emitting laser array, Appl. Opt., vol. 29, no. 34, pp. 5080-5085, Dec. 1990.
• T. Takagi, Fumio Koyama, Kenichi Iga. Photoluminescence study of electron wave confinement in multi-quantum barrier (MQB), J. Appl. Phys, vol. 29, no. 11, pp. 1969-1972, Nov. 1990.
• T. Takagi, Fumio Koyama, Kenichi Iga. Potential barrier height analysis of AlGaInP multi-quantum barrier (MQB, Jpn. J. Appl. Phys., vol. 29, no. 11, pp. 1977-1980, Nov. 1990.
• T. Uchida, Noriyuki Yokouchi, Kazuaki Mise, Fumio Koyama, Kenichi. Iga. Cracking yield dependence of InP growth by chemical beam epitaxy, Jpn. J. Appl. Phys, vol. 29, no. 10, pp. 1738-1740, Oct. 1990.
• T. Uchida, K. Mise, Fumio Koyama, Kenichi Iga. Extremely high Be doped Ga0.47In0.53As growth by chemical beam epitaxy, J. Crystal Growth, vol. 105, pp. 366-370, Sept. 1990.
• T. Uchida, Kazuaki Mise, Noriyuki Yokouchi, Fumio Koyama, Kenichi Iga. Growth of Ga0.47In0.53As-InP double-heterostructure wafer by chemical beam epitaxy, Jpn. J. Appl. Phys, vol. 29, no. 9, pp. 1771-1772, Sept. 1990.
• Noriyuki Yokouchi, Fumio Koyama, Kenichi Iga. Estimation of tunable wavelength range in surface emitting laser using intra-cavity quantum-well tuner, Trans. IEICE, vol. E73, no. 9, pp. 1473-1475, Sept. 1990.
• H. Tanobe, Fumio Koyama, Kenichi Iga. Spectral linewidth measurement of a GaAs/GaAlAs surface emitting laser, Trans. IEICE, vol. J73-C-I, no. 5, pp. 241-245, May 1990.
• Ken Morito, Fumio Koyama, Kenichi Iga. Intensity noise of GaAlAs/GaAs surface emitting laser,, Jpn. J. Appl. Phys, vol. 29, no. 2, pp. 299-300, Mar. 1990.
• T. Uchida, Kazuaki Mise, Fumio Koyama, Kenichi Iga. Highly beryllium-doped and lattice-matched GaInAsP/InP growth by chemical beam epitaxy (CBE), Jpn. J. Appl. Phys., vol. 29, no. 3, pp. 562-563, Mar. 1990.
• 坂口 孝浩, 小山二三夫, 伊賀健一. 半導体多層膜分布ブラッグ反射鏡を用いる面発光レーザーの設計と製作, レーザー研究, Vol. 18, No. 3, pp. 137-145, Mar. 1990.
• Takashi Tadokoro, Fumio Koyama, Kenichi Iga. Comparison of luminescence from InP processed by reactive ion beam etching, Jpn. J. Appl. Phys, vol. 29, no. 2, pp. 242-243, Feb. 1990.
• KENICHI IGA. Image Multiplexer using a Planar Microlens Array, Appl. Opt., Vol. 29, pp. 9, 1990.
• M. Shimizu, Fumio Koyama, Kenichi Iga. Estimation of diffraction loss in surface emitting laser cavity by beam propagation method, Trans. IEICE, vol. E72, no. 1, pp. 1050-1051, Oct. 1989.
• T. Uchida, Fumio Koyama, Kenichi Iga. Estimation of linewidth for a surface emitting laser with multilayer DBRs, Trans. IEICE, vol. E72, no. 10, pp. 1084-1085, Oct. 1989.
• Takashi Tadokoro, Fumio Koyama, Kenichi Iga. Classification of etching mechanism in reactive ion beam etch,” J. Vac. Sci. Technol, J. Vac. Sci. Technol., vol. B7, no. 5, pp. 1111-1114, Sept. 1989.
• Fumio Koyama, Susumu Kinoshita, Kenichi Iga. Room temperature continuous wave lasing characteristics of a GaAs vertical cavity surface-emitting laser, Appl. Phys. Lett., vol. 55, no. 3, pp. 221-222, July 1989.
• H. Uenohara, F. Koyama, K. Iga. AlGaAs/GaAs multiquantum well (MQW) surface-emitting laser, Electron. Lett., vol. 25, no. 12, pp. 770-771, June 1989.
• Kenichi Iga, Fumio Koyama, Susumu Kinoshita. Surface emitting semiconductor laser array: Its advantage and future, J. Vac. Sci. Technol, vol. A7, no. 3, pp. 842-846, May 1989.
• Hiroyuki Uenohara, Fumio Koyama, Kenichi Iga. Application of the multi-quantum well (MQW) to a surface emitting laser, Jpn. J. Appl. Phys., vol. 28, no. 4, pp. 740-741, Apr. 1989.
• M. Oshikiri, H. Kawasaki, Fumio Koyama, Kenichi Iga. Reflectivity dependence of threshold current in GaInAsP/InP surface emitting laser, IEEE Photon. Technol. Lett., vol. 1, no. 1, pp. 11-13, Jan. 1989.
• Kenichi Iga, S. Kinoshita, Fumio Koyama. Recent advances of surface emitting semiconductor lasers, Optoelectronics Device and Technologies, vol. 3, no. 2, pp. 131-142, Dec. 1988.
• Fumio Koyama, S. Kinoshita, Kenichi Iga. Room temperature cw operation of GaAs vertical cavity surface emitting laser, Trans. IEICE, vol. E71, no. 11, pp. 1089-1090, Dec. 1988.
• Takahiro Sakaguchi, M. Oshikiri, Fumio Koyama, Kenichi Iga. TiO/SiO dielectric multilayer reflector for surface emitting semiconductor lasers, Proc. MRS Int'l MeetinG.n Advanced Materials, vol. 10, pp. 243-251, Dec. 1988.
• F. Koyama, S. Kinoshita, K. Iga. Room temperature cw operation of GaAs vertical cavity surface emitting laser, Trans. IEICE of Japan, vol. E71, no. 11, pp. 1089-1090, Dec. 1988.
• Kenichi Iga, Fumio Koyama, S. Kinoshita. Surface emitting lasers, Trans. IEICE, vol. J71-C, no. 11, pp. 1493-1500, Nov. 1988.
• J. Nitta, Fumio Koyama, Kenichi Iga. Pulse operation of GaAs/AlGaAs surface-emitting-laser-type optical threshold device, Trans. IEICE, vol. J71-C, no. 9, pp. 1267-1273, Sept. 1988.
• M. Shimizu, Fumio Koyama, K.enichi Iga. Polarization characteristics of MOCVD grown GaAs/GaAlAs CBH surface emitting lasers, Jpn. J. Appl. Phys, vol. 27, no. 9, pp. 1774-1775, Sept. 1988.
• Takahiro Sakaguchi, Fumio Koyama, Kenichi Iga. Vertical cavity surface emitting laser with AlGaAs/AlAs Bragg reflector, Electronics Letter, Vol. 24, No. 15, pp. 928-929, Aug. 1988.
• H. Kawasaki, Fumio Koyama, Kenichi Iga. Improvement of a flat surface circular buried heterostructure GaInAsP/InP surface emitting laser, Jpn. J. Appl. Phys., vol. 27, no. 8, pp. 1548-1549, Aug. 1988.
• S. Kinoshita, K. Morito, F. Koyama, K. Iga. Reproducible fabrication of AlGaAs/GaAs circular buried heterostructure (CBH) surface-emitting lasers with low threshold, Electron. Lett., vol. 24, no. 11, pp. 699-700, May 1988.
• T. Tadokoro, F. Koyama, Kenichi Iga. Classification of etching mechanism in reactive ion beam etching, Trans. IEICE, vol. J71-C, no. 6, pp. 841-845, May 1988.
• H. Onda, H, . Uenohara, F. Koyama, K. Iga. Evaluation of MQW wafer for surface emitting laser by x-ray diffraction, Jpn. J. Appl. Phys., vol. 27, no. 3, pp. 438-439, Mar. 1988.
• F. Koyama, K. Tomomatsu, K. Iga. GaAs surface emitting lasers with circular buried heterostructure grown by metalorganic chemical vapor deposition and two-dimensional laser array, Appl. Phys. Lett., Vol. 52, no. 7, pp. 528-529, Feb. 1988.
• F. Koyama, K. Iga. Frequency chirping in external modulators, IEEE J. Lightwave Tech., vol. 6, no. 1, pp. 87-93, Jan. 1988.
• I. Watanabe, F. Koyama, K. Iga. GaInAsP/InP CBH surface emitting laser with a dielectric multilayer reflector, Jpn. J. Appl. Phys., vol. 26, no. 9, pp. 1598-1599, Sept. 1987.
• Fumio Koyama, Hiroyuki Uenohara, Takahiro Sakaguchi, Kenichi Iga. GaAlAs/GaAs MOCVD growth for Surface Emitting Laser, Jpn. J. Appl. Phys., Vol. 26, No. 7, pp. 1077-1081, July 1987.
• Kenichi Iga, Fumio Koyama. Single longitudinal mode operation of directly modulated GaAlAs/GaAs surface emitting laser, Trans. IEICE, vol. E70, no. 5, pp. 455-457, May 1987.
• K. Iga, F. Koyama. Lateral carrier diffusion effect in parametric modulation of semiconductor lasers, Trans. IEICE, vol. E70, no. 5, pp. 458－459, May 1987.
• Susumu Kinoshita, Takahiro Sakaguchi, Tetsushi Odagawa, Kenichi Iga. GaAlAs/GaAs Surface Emitting Laser with High Reflective TiO2/SiO2 Multilayer Bragg Reflector, Jpn. J. Appl. Phys., Vol. 26, No. 3, pp. 410-415, Mar. 1987.
• H.Uenohara, K. Iga, F. Koyama. Analysis of electron wave reflectivity and leakage current of multi quantum barrier: MQB, Trans. IEICE, vol. J70-C, no. 6, pp. 851-857, Jan. 1987.
• H. Yamakawa, I. Watanabe, S.Uchiyama, F. Koyama, K. Iga. Fabrication and characteristics of GaInAsP/InP surface emitting laser with circular buried heterostructure, Trans. IEICE, vol. J70-C, no. 6, pp. 833－838, Jan. 1987.
• K. Iga, S. Kinoshita, F. Koyama. Microcavity GaAlAs/GaAs surface emitting laser with Ith=6 mA, Electron. Lett., vol. 23, no. 3, pp. 134－136, Jan. 1987.
• I. Watanabe, F. Koyama, K. Iga. Low temperature CW operation of GaInAsP/InP surface emitting laser with circular buried heterostructure, Electron. Lett, vol. 22, no. 25, pp. 1325－1327, Dec. 1986.
• K. Iga, H.Uenohara, F. Koyama. Electron reflectance of multiquantum Barrier (MQB), Electron. Lett, vol. 22, no. 19, pp. 1008－1010, Sept. 1986.
• 木下 進, 小林 高広, 坂口 孝浩, 小田川 哲史, 伊賀 健一. TiO2/SiO2多層膜反射鏡を用いたGaAs面発光レーザの室温パルス発振, 電子通信学会論文誌, Vol. J69-C, No. 4, pp. 412-420, Apr. 1986.
• F. Koyama, K. Iga. Frequency chirping of external modulation and its reduction, Electron. Lett., vol. 21, no. 23, pp. 1065-1066, Nov. 1985.

著書

• 伊賀健一. 面発光レーザーが輝く （第3版）, オプトロニクス社, Sept. 2022.
• T. Kageyama, T. Miyamoto, S. Makino, F. Koyama, K. Iga. Optical quality improvement and blue-shift of GaInNAs/GaAs quantum well structures by thermal annealing, Compound Semiconductors 1998, pp. 639-644, Jan. 2021.
• Babu Padullaparthi Dayal, Jim Tatum, Kenichi Iga. VCSEL Industry: Communication and Sensing, Wiley-IEEE Press, 2021.
• 伊賀健一, 波多腰玄一. 光エレクトロニクスの玉手箱 IV, アドコム・メディア, Dec. 2019.
• 伊賀健一, 波多腰玄一. 光エレクトロニクスの玉手箱 III, アドコム・メディア, June 2019.
• 伊賀健一, 波多腰玄一. 光エレクトロニクスの玉手箱 II, アドコム・メディア, Dec. 2018.
• 伊賀健一, 波多腰玄一. 光エレクトロニクスの玉手箱 I, アドコム・メディア, June 2018.
• 伊賀健一. 面発光レーザーが輝く : VCSELオデッセイ, オプトロニクス社, 2018.
• 末松安晴, 伊賀健一. 光ファイバ通信入門（改訂5版）, オーム社, 2017.
• 末松 安晴, 伊賀健一. 光ファイバ通信入門（改訂第4版3刷）, オーム社, 2009.
• 末松安晴, 伊賀健一. 光ファイバ通信入門（改訂第4版第1刷）, オーム社, 2008.
• Kenichi Iga, Yasuo Kokubun. Encyclopedic Handbook of Integrated Optics, Taylor & Francis, 2006.
• 末松安晴, 伊賀健一. 光ファイバ通信入門(改訂3版12刷), オーム社, オーム社, 2000.
• 伊賀健一, 小山二三夫. 面発光レーザの基礎と応用, 共立出版, 共立出版, 1999.
• Kenichi Iga (coauthor). Phosphor handbook (edited under the auspices of Phosphor Research Society), CRC Press, 1998.
• 伊賀健一（分担）. 先端工学（道家達将編著）, 放送大学教育振興会, 1997.
• Kenichi Iga, Susumu Kinoshita. Process Technology for Semiconductor Lasers : Crystal Growth and Microprocesses, Springer, 1996.
• 伊賀健一（分担）. 面発光半導体レーザ, 図解光デバイス辞典, オプトロニクス社, 1996.
• 伊賀健一（分担）. 平板マイクロレンズ, 図解光デバイス辞典, オプトロニクス社, 1996.
• 伊賀健一（分担）. 光学素子の基礎と活用法（大井みさほ編）, 学会出版センター, 1996.
• 伊賀健一. 現代 応用電気数学, オーム社, オーム社, 1995.
• KENICHI IGA. Quantum Electronics, Ediotor in Applied Physics Data Book Maruzen, Ediotor in Applied Physics Data Book Maruzen, 1995.
• KENICHI IGA. Handbook of Microoptics,Editor, Asakura-Shoten Pub.Co.Ltd, Asakura-Shoten Pub.Co.Ltd, 1995.
• KENICHI IGA. Conlemporary Mathematics for Electronics, Ohmsha, Ohmsha, 1995.
• 伊賀健一（編著）. 量子エレクトロニクス, 応用物理データブック（応用物理学会編）, 丸善, 1995.
• Kenichi Iga (coauthor). Spontanuous Emission and Laser Oscillation in Microcavities (edited. by Hiroyuki Yokoyama and Kikuo Ujihara), CRC Press, 1995.
• 伊賀健一. 半導体レーザ, オーム社, オーム社, 1994.
• KENICHI IGA. Fundamentals of Laser Optics, Plenum Pub. Corp., Plenum Pub. Corp., 1994.
• Kenichi Iga. Fundamental Lightwave Devices, Handbook of Semiconductor Lasers and Photonic Integrated Circuit (edited by Y. Suematsu and A. R. Adams), Chapman and Hall, 1994.
• 伊賀健一（分担）. 光測定ハンドブック, 朝倉書店, 1994.
• 伊賀健一. 面発光レーザ, レ－ザ技術の新展開（レ－ザ学会編）, 学会センター関西, 1994.
• KENICHI IGA. Vertical -Cavity Surface Emitting Lasers and Arrays, Academic Press, Academic Press, pp. 71-117, 1993.
• 伊賀健一. 面発光レーザ, オーム社, オーム社, 1990.
• 伊賀健一. 光フアイバ, オーム社, オーム社, 1990.
• 伊賀健一. レーザ光学の基礎, オーム社, 1988.
• K. Iga, Y. Kokubun, M. Oikawa. Fundamentals of Microoptics, Academic Press, 1984.

国際会議発表 (査読有り)

• Kenichi Iga, Akinori Nishihara. Invention of a Temperature-Insensitive Quartz Oscillation Plate, 1933, 2017 IEEE HISTory of ELectrotechnolgy CONference (HISTELCON), 2017 IEEE HISTory of ELectrotechnolgy CONference (HISTELCON), pp. 87-90, Aug. 2017.
• Kenichi Iga. Vertical-cavity surface-emitting laser--progress and prospects--, Trans. IEICE, vol. E85-C, no. 1, pp. 10-20, Jan. 2002.
• Kenichi Iga. Surface emitting laser - its histry and prospect -, The Review of Laser Eng., vol. 29, no. 12, pp. 768-772, Dec. 2001.
• Tsukasa Yoshida, Yoshihiko Uchida, Takahiro Sakaguchi, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga. Characterization of thin film InGaN/GaN QWs formed by removing a substrate with UV laser irradiation for blue VCSELs, 8th Microoptics Conf. (MOC'01), pp. 76-79, Oct. 2001.
• Shigeki Makino, Tomoyuki Miyamoto, Takeo Kageyama Yoshihiko Ikenaga, Nobuhiko Nishiyama, Akihiro Matsutani, Fumio Koyama, Kenichi Iga. Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1mW, The Pacific Rim Conf. on Lasers and Electro-Optics 2001, pp. II-608-609, July 2001.
• Satoshi Shinada, Fumio Koyama, Nobuhiko Nishiyama, Masakazu Arai, Kenichi Iga. Analysis and fabrication of micro-aperture GaAs/GaAlAs surface emitting laser for near field optical data storage, IEEE J. Select. Top. Quantum Electron., vol. 7, no. 2, pp. 365-370, May 2001.
• Nobuhiko Nishiyama, Masakazu Arai, Satoshi Shinada, Munechika Azuchi, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga. Highly strained GaInAs/GaAs quantum well vertical-cavity surface-emitting laser on GaAs (311)B substrate for stable polarization operation, IEEE J. Select. Top. Quantum Electron., vol. 7, no. 2, pp. 242-248, May 2001.
• Takeo Kageyama, Tomoyuki Miyamoto, Shigeki Makino, Yoshihiko Ikenaga, Nobuhiko Nishiyama, Akihiro Matsutani, Fumio Koyama, Kenichi Iga. Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1mW, Electron. Lett., vol. 37, no. 4, pp. 225-226, Jan. 2001.
• Fumio Koyama, Dietmar Schlenker, Nobuhiko Nishiyama, Tomoyuki Miyamoto, Kenichi Iga. Highly strained GaInAs/GaAs quantum well lasers emitting at 1.2µm wavelength, Frontier Science Research Conf., Dec. 2000.
• Kenichi Iga. Surface emitting laser-its birth and generation of new optoelectronics field, IEEE J. Select. Top. Quantum Electron, vol. 6, no. 6, pp. 1201-1215, Nov. 2000.
• Takeo Kageyama, Tomoyuki Miyamoto, Shigeki Makino, Fumio Koyama, Kenichi Iga. High-temperature operation up to 170°C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy, IEEE Photon. Technol. Lett., vol. 12, no. 1, pp. 10-12, Jan. 2000.
• Kenichi Iga. Surface Emitting Laser and Arrayed Photonic Device:The Forerunner of Ultraparallel Optoelectronics, 5th Optoelectronics and Communication Conf. (OECC 2000)., Honorable Guest Speech, 2000.
• Satoshi Shinada, Fumio Koyama, Nobuhiko Nishiyama, Masakazu Arai, Akihiro Matsutani, Kenya Goto, Kenichi Iga. Optical near field by vertical cavity surface emitting laser, Trans. IEICE, Vol. J83-C, No. 9, pp. 826-833, 2000.
• F. Koyama, D. Schlenker, T. Miyamoto, Z. Chen, K. Iga. 1.2 μm GaInAs/GaAs lasers - Are they useful for high capacity single mode fiber datacom?, SPIE Conf. on Photonics Technology (SPIE Symposium, pp. 290-296, Dec. 1999.
• FUMIO KOYAMA, *K. Iga, T. Miyamoto, D. Schlenker. High characteristic temperature (T0>150K) 1.2 mm GaInAs/GaAs lasers, IEEE Lasers and Electro-Optics Society 1999 Annual Meeting (LEOS’99), Nov. 1999.
• T. Amano, F. Koyama, N. Furukawa, N. Nishiyama, M. Arai, Kenichi Iga. Micromachined GaAlAs/GaAs vertical cavity filter with adjustable temperature dependence, 5th Asia Pacific Conf. on Communications and 4th Optoelectronics and Communications Conf. (APCC/OECC’99), 5th Asia Pacific Conference on Communications and 4th Optoelectronics and Communications Conference (APCC/OECC'99), Vol. PD, pp. 19-20, Oct. 1999.
• Zhibiao Chen, Dietmar Schlenker, FUMIO KOYAMA, Tomoyuki Miyamoto, Akihiro Matsutani, K. Iga. High temperature characteristics of highly strained 1.2 µm InGaAs/GaAs quantum well lasers, 5th Asia Pacific Conference on Communications and 4th Optoelectronics and Communications Conference, pp. 1311-1314, Oct. 1999.
• F. Koyama, D. Schlenker, T. Miyamoto, Z. Chen, A. Matsutani, T. Sakaguchi, K. Iga. 2 Gbit/s single-mode fiber data transmission using 1.2 μm heatsink-free GaInAs/GaAs laser for Gbit/s-LAN, 25th European Conf. on Optical Communication (ECOC’99), pp. II-78, Sept. 1999.
• T. Kageyama, T. Miyamoto, S. Makino, F. Koyama, K. Iga. GaInNAs/GaAs quantum well laser grown by chemical beam epitaxy, The 1999 Int. Conf. on Solid State Devices and Materials (SSDM’99), pp. 290-291, Sept. 1999.
• F. Koyama, T. Miyamoto, Z. Chen, A. Matsutani, T. Sakaguchi, K. Iga. Highly strained GaInAs/GaAs QW for 1.2 μm surface emitting lasers, IEEE/LEOS Summer Topical Meetings,LEOS Summer’99, pp. 23, Sept. 1999.
• *K. Iga, F. Koyama. Advances in vertical cavity surface emitting lasers, 18th Int. Commission for Optics (ICO’99), pp. 300-301, Aug. 1999.
• Takeo Kageyama, T. Miyamoto, Shigeki Makino, F. Koyama, K. Iga. Optical quality of GaNAs and GaInNAs and its dependence on RF cell condition in chemical beam epitaxy, 7th Int. Conf. on Chemical Beam Epitaxy and Related Growth Techniques, ICCBE-7, pp. 113-114, July 1999.
• *T. Miyamoto, F. Koyama, K. Iga. CBE and MOCVD growth of GaInNAs, 7th Int. Conf. on Chemical Beam Epitaxy and Related Growth Techniques, ICCBE-7, pp. 97-98, July 1999.
• N. Furukawa, F. Koyama, N. Nishiyama, M. Arai, T. Miyamoto, K. Iga. Micromachined tunable GaAlAs/GaAs DBR for temperature insensitive vertical cavity add/drop filter, 7th Microoptics Conf. , MOC’99, pp. 70-73, July 1999.
• F. Koyama, S. Sato, T. Miyamoto, K. Iga. Composition dependence of carrier lifetime and spontaneous emission of highly strained GaInNAs/GaAs QW lasers, 11th Int. Conf. on Indium Phosphide and Related Materials ,IPRM’99, pp. 565-568, May 1999.
• D. Schlenker, T. Miyamoto, Z. Chen, F. Koyama, K. Iga. Long wavelength GaInAs/GaAs quantum well lasers, 11th Int. Conf. on Indium Phosphide and Related Materials (IPRM’99, pp. 499-502, May 1999.
• S. Sekiguchi, T. Miyamoto, T. Kimura, F. Koyama, K. Iga. Selectively formed AlAs/InP current confining tunnel J.ction for GaInAsP/InP surface emitting lasers, 11th Int. Conf. on Indium Phosphide and Related Materials (IPRM’99), pp. 211-214, May 1999.
• M. Fujita, T. Baba, A. Matsutani, F. Koyama, K. Iga. A novel GaInAsP microcylinder laser with AlInAs(Ox) cladding, 11th Int. Conf. on Indium Phosphide and Related Materials ,IPRM’99, TuB1-5, pp. 215-217, May 1999.
• D. Schlenker, T. Miyamoto, Z. Chen, F. Koyama, K. Iga. Growth of highly strained 1.2 mm GaInAs/GaAs quantum wells for long-wavelength laser, 9th biennial workshop on Organometallic Vapor Phase Epitaxy, May 1999.
• Nobuhiko Nishiyama, Akimasa Mizutani, Nobuaki Hatori, Masakazu Arai, Fumio Koyama, Kenichi Iga. Lasing characteristics of InGaAs-GaAs polarization controlled vertical-cavity surface-emitting laser grown on GaAs (311)B substrate, IEEE J. Select. Top. Quantum Electron, vol. 5, no. 3, pp. 530-536, May 1999.
• N. Nishiyama, S. Shinada, M. Arai, F. Koyama, K. Iga. Threshold reduction of polarization controlled InGaAs/GaAs vertical-cavity surface emitting lasers on GaAs (311)B substrates, OSA Snowmass Meeting 1999, SMD3, pp. 43-45, Apr. 1999.
• Yasuhiko Aoki, Toshio Kato, Rogerio Jun Mizuno, Kenichi Iga. Micro-optical bench for alignment-free optical coupling, Appl. Opt., vol. 38, no. 6, pp. 963-965, Feb. 1999.
• Takeshi Yamatya, S. Mori, F. Koyama, K. Iga. Design and fabrication of high power and broad-band GaInAsP/InP strained quantum well superluminescent diodes with tapered active region, The Pacific Rim Conf. on Lasers and Electro-Optics 1999 (CLEO/PR’99), CLEO Pacific Rim'99, Vol. FO6, 1999.
• S. Mitsugi, F. Koyama, A. Matsutani, K. Iga. Fabrication of InP vertical facets by reactive ion etching and sidewall roughness evaluation for semiconductor microvcavities, The Pacific Rim Conf. on Lasers and Electro-Optics 1999 (CLEO/PR’99), CLEO Pacific Rim'99, WR6, 1999.
• *F. Koyama, S. Shinada, K. Goto, K. Iga. Surface emitting lasers for optical near-field data storage, SPIE Conf. on Photonics Technology (SPIE Symposium), Fumio KOYAMA, Satoshi SHINADA, Kenya GOTO and Kenichi IGA, Vol. 3899, No. 45, pp. 344-350, 1999.
• S. Shinada, K. Suzuki, F. Koyama, N. Nishiyama, K. Iga, K. Goto. Micro-aperture surface emitting laser for near field optical data storage, The Pacific Rim Conf. on Lasers and Electro-Optics 1999 (CLEO/PR’99), 1999.
• T. Sakaguchi, T. Shirasawa, N. Mochida, A. Inoue, MaS. Iwata, T. Honda, F. Koyama, K. Iga. Highly reflective AlN/GaN and ZrO2/SiO2 multilayer distributed Bragg reflectors for InGaN/GaN surface emitting lasers, IEEE Lasers and Electro-Optics Society 1998 Annual Meeting, LEOS'98, TuC4, Dec. 1998.
• A. Matsutani, F. Koyama, K. Iga. Low bias voltage dry etchinG.f InP by inductively coupled plasma (ICP) using SiCl4/A, IEEE Lasers and Electro-Optics Society 1998 Annual Meeting, LEOS'98, WS4, Dec. 1998.
• T. Miyamoto, T. Kageyama, D. Schlenker, S. Makino, F. Koyama, K. Iga. Comparison of GaInNAs grown by MOCVD and CBE, IEEE Lasers and Electro-Optics Society 1998 Annual Meeting, LEOS'98, Dec. 1998.
• S. Sekiguchi, T. Miyamoto, T. Kimura, F. Koyama, K.Iga. Heavy p-type carbon doping to AlAs for InP based optoelectronic devices, IEEE Lasers and Electro-Optics Society 1998 Annual Meeting, LEOS'98, Dec. 1998.
• Koichi Suzuki, F. Koyama, K. Iga. Proposal and design of large-scale GaInAsP/InP arrayed waveguide grating multiplexers with corner reflectors, 1998 OSA Annual Meeting.OSA'98, WKK4, pp. 114, Nov. 1998.
• N. Nishiyama, A. Mizutani, N. Hatori, F. Koyama, K. Iga. Single mode and stable polarization InGaAs/GaAs surface emitting laser grown on GaAs(311)B substrate, 16th Int. Semiconductor Laser Conf., ISLC'9, ThA1, Oct. 1998.
• N. Ohnoki, Gen Okazaki, F. Koyama, K.Iga. Record high characteristic temperature (T0=122K) in 1.55μm AlGaInAs lasers with AlAs/AlInAs multiple quantum barrier, 16th Int. Semiconductor Laser Conf., ISLC'98, PD-9, Oct. 1998.
• A. Inoue, T. Sakaguchi, Y. Moriguchi, T. Miyamoto, M. Iwata, F. Koyama, K.Iga. InGaN selective MOCVD growth and polycrystalline formation on SiO2-patterned sapphire substrate, 2nd Int. Symp. on Blue Laser and Light Emitting Diodes, ISBLLED'98, Sept. 1998.
• Kenichi Iga. Surface emitting laser, Trans. IEICE, vol. J81-C-I, no. 9, pp. 483-493, Sept. 1998.
• A. Katsube, T. Honda, T. Sakaguchi, F. Koyama, K. Iga. Design of low threshold GaN-based quantum well surface emitting laser, Topical Workshop on III-V Nitrides(TWIII-VN), p. 8, Sept. 1995.
• F. Koyama, K.Iga. Design of ultra-low power optical interconnects using low threshold vertical cavity surface emitting lasers, 1995 OSA Annual Meeting(OSA'95), Sept. 1995.
• T. Honda, A. Katsube, T. Sakaguchi, F. Koyama, K.Iga. Design of GaN-based surface emitting laser with low threshold operation, Int. Conf. on Silicon Carbide and Related Materials(ICSCRM-95), Tup-14, pp. 279-280, Sept. 1995.
• T. Honda, T.Sakaguchi, F. Koyama, K. Iga, K. Inoue, H. Munekata, H. Kukimoto. Design and fabrication of ZnSe-based blue/green surface emitting lasers, 7th Int. Conf. on II-VI Compounds and Devices(ICII-VICD), Aug. 1995.
• N. Hatori, T. Mukaihara, Y. Hayashi, N. Ohnoki, F. Koyama, K. Iga. Design and fabrication of quantum wires for vertical-cavity surface-emitting lasers, The 1995 Int. Conf. on Solid State Devices and Materials(SSDM'95), Aug. 1995.
• T. Baba, M. Hamasaki, N. Watanabe, A. Matsutani, T. Mukaihara, F. Koyama, K.Iga. A novel short cavity laser with deep grating DBRs, The 1995 Int. Conf. on Solid State Devices and Materials(SSDM'95), Aug. 1995.
• T. Baba, M. Hamasaki, N. Watanabe, A. Matsutani, T. Mukaihara, F. Koyama, K.Iga. A novel short cavity laser with deep grating DBRs, The 1995 Int. Conf. on Solid State Devices and Materials(SSDM'95), Aug. 1995.
• T. Baba, M. Hamasaki, N. Watanabe, A. Matsutani, T. Mukaihara, F. Koyama, K.Iga. A novel short cavity laser with deep grating DBRs, The 1995 Int. Conf. on Solid State Devices and Materials(SSDM'95), Aug. 1995.
• T. Baba, M. Hamasaki, N. Watanabe, A. Matsutani, T. Mukaihara, F. Koyama, K.Iga. A novel short cavity laser with deep grating DBRs, The 1995 Int. Conf. on Solid State Devices and Materials(SSDM'95), Aug. 1995.
• T. Baba, M. Hamasaki, N. Watanabe, A. Matsutani, T. Mukaihara, F. Koyama, K.Iga. A novel short cavity laser with deep grating DBRs, The 1995 Int. Conf. on Solid State Devices and Materials(SSDM'95), Aug. 1995.
• T. Baba, M. Hamasaki, N. Watanabe, A. Matsutani, T. Mukaihara, F. Koyama, K.Iga. A novel short cavity laser with deep grating DBRs, The 1995 Int. Conf. on Solid State Devices and Materials(SSDM'95), Aug. 1995.
• T. Baba, M. Hamasaki, N. Watanabe, A. Matsutani, T. Mukaihara, F. Koyama, K.Iga. A novel short cavity laser with deep grating DBRs, The 1995 Int. Conf. on Solid State Devices and Materials(SSDM'95), Aug. 1995.
• T. Baba, M. Hamasaki, N. Watanabe, A. Matsutani, T. Mukaihara, F. Koyama, K.Iga. A novel short cavity laser with deep grating DBRs, The 1995 Int. Conf. on Solid State Devices and Materials(SSDM'95), Aug. 1995.
• T. Baba, M. Hamasaki, N. Watanabe, A. Matsutani, T. Mukaihara, F. Koyama, K.Iga. A novel short cavity laser with deep grating DBRs, The 1995 Int. Conf. on Solid State Devices and Materials(SSDM'95), Aug. 1995.
• T. Baba, M. Hamasaki, N. Watanabe, A. Matsutani, T. Mukaihara, F. Koyama, K.Iga. A novel short cavity laser with deep grating DBRs, The 1995 Int. Conf. on Solid State Devices and Materials(SSDM'95), Aug. 1995.
• N. Ohnoki, T. Mukaihara, Y. Hayashi, N. Hatori, F. Koyama, K. Iga. Optical characteristics of Au/GaAs polarizer for controlling surface-emitting laser polarization, The Pacific Rim Conf. on Lasers and Electro-Optics 1995 (CLEO/PR'95), ThC3, July 1995.
• T. Honda, A. Katsube, T. Sakaguchi, FUMIO KOYAMA, K. Iga. Threshold estimation of GaN-based surface emitting lasers operating in ultraviolet spectral region, Jpn. J. Appl. Phys, vol. 34, pp. 3527-3532, July 1995.
• T. Mukaihara, N. Ohnoki, Y. Hayashi, N. Hatori, F. Koyama, K. Iga. Excess intensity noise of vertical-cavity surface-emitting lasers caused by polarization fluctuation, The Pacific Rim Conf. on Lasers and Electro-Optics 1995(CLEO/PR'95), ThC2, July 1995.
• T. Miyamoto, T. Takada, Y. Kurita, K. Mori, F. Koyama, K.Iga. Design of p-cladding layer for low threshold long-wavelength surface-emitting lasers, The Pacific Rim Conf. on Lasers and Electro-Optics 1995(CLEO/PR'95), July 1995.
• T. Honda, K. Inoue, H. Munekata, H. Kukimoto, F. Koyama, K. Iga. ZnSe-based vertical Fabry-Perot cavity for blue surface emitting lasers, The Pacific Rim Conf. on Lasers and Electro-Optics 1995(CLEO/PR'95), pp. 134-135, July 1995.
• T. H. Loh, Tomoyuki Miyamoto, Yoichiro Kurita, Fumio Koyama, Kenichi Iga. Reduction of inelastic scattering effect by introducing strain-compensated superlattice into GaInAs/GaInP multi-quantum barriers, 7th Int. Conf. on Indium Phosphide and Related Materials, May 1995.
• Y. Hayashi, T. Mukaihara, N. Hatori, N. Ohnoki, A. Matsutani, F. Koyama, K. Iga. A record low threshold InGaAs/GaAlAs vertical-cavity surface-emitting laser, Quantum Optoelectronics Conf., QOE'95, Mar. 1995.
• T. H. Loh, F. Koyama, K. Iga. A study on inelastic scattering effect in unstrained and strain-compensated GaInAs/GaInP multi-quantum barrier, Int. Workshop on Mesoscopic Physics and Electronics, MPE'95, J4, Mar. 1995.
• Y. Hayashi, T. Mukaihara, N. Hatori, N. Ohnoki, A. Matsutani, F. Koyama, K. Iga. Record low-threshold index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure, Electron. Lett., vol. 31, pp. 560-562, Mar. 1995.
• F. Koyama, T. Mukaihara, Y. Hayashi, N. Ohnoki, N. Hatori, K. Iga. Low threshold multi-wavelength VCSEL arrays fabricated by nonplanar MOCVD, SPIE'95, 2399, pp. 629-635, Feb. 1995.
• KENICHI IGA. GaInASp/InP Vertical Cavity Surface emitting Lasers in 1.3 and 1.5μm-wavelength Band In Current Trendsin Vertical Cavity Surtace Emitting Lasers, World Scientific Pub.Co.Pte.Ltd.Ed.by.T.P.Lee, World Scientific Pub.Co.Pte.Ltd.Ed.by.T.P.Lee, pp. 530-542, 1995.
• F. Koyama, K. Suzuki, A.Matsutani, J. Kato, T. Mukaihara, K. Iga. Active semiconductor power splitters with sub-micron wide input aperture, 10th Int. Conf. on Integrated Optics and Optical Fibre Communication (IOOC'95), ThD2-5, pp. 106-107, 1995.
• T. Mukaihara, Y. Hayashi, N. Hatori, N. Ohnoki, A. Matsutani, F. Koyama, K. Iga. 0.33 mA threshold InGaAs/GaAs vertical-cavity surface-emitting lasers grown by MOCVD, Conf. on Lasers and Electro-Optics 1995 (CLEO'95), CTuB5, 1995.
• Kenichi Iga, Susumu Kinoshita. Process Technolgy for Semiconductor Lasers, Springer-Verlag, Spvinger-Verlag, 1995.
• S. W. Lim, T. Honda, K. Yanashima, F. Koyama, H. Kukimoto, K.Iga. Highly-doped p-ZnSe formation by Li3N diffusion, IEEE Lasers and Electro-Optics Society 1994 Annual Meeting, LEOS'94, OM2.4, pp. 59, Nov. 1994.
• F. Koyama, S. Mitsugi, J. Kato, A. Matsutani, K. Suzuki, T. Mukaihara, K. Iga. RIBE micro-fabrication of semiconductor photonic devices for micro-photonic integrated circuit, IEEE Lasers and Electro-Optics Society 1994 Annual Meeting, LEOS'94, IO5.2, Nov. 1994.
• T. Mukaihara, N. Ohnoki, Y. Hayashi, F. Koyama, K. Iga. Polarization control of vertical-cavity surface-emitting lasers by a birefringent metal/semiconductor polarizer terminating a distributed Bragg reflector, 14th Int. Semiconductor Laser Conf., ISLC'94, W1.6, Oct. 1994.
• F. Koyama, T. Mukaihara, Y. Hayashi, N. Ohnoki, N. Hatori, K. Iga. Multi-wavelength vertical cavity surface emitting laser arrays fabricated by nonplanar MOCVD, 20th European Conf. on Optical Communication, ECOC'94, Post deadline paper, pp. 125-127, Sept. 1994.
• F. Koyama, Toshihiko Baba, K. Iga. Present status and future prospect of long wavelength surface emitting lasers, 20th European Conf. on Optical Communication, ECOC'94, pp. 333-336, Sept. 1994.
• S. W. Lim, T. Honda, K. Yanashima, K. Inoue, H. Munekata, H. Kukimoto, F. Koyama, K. Iga. Highly conductive p-type ZnSe formation using Li3N diffusion, The 1994 Int. Conf. on Solid State Devices and Materials, SSDM'94, LD4, pp. 967-968, Aug. 1994.
• S.Mitsugi, J. Kato, F. Koyama, A.Matsutani, T. Mukaihara, K. Iga. GaInAs/GaAs micro-arc ring semiconductor lasers, The 1994 Int. Conf. on Solid State Devices and Materials, SSDM'94, S-I-10-2, Aug. 1994.
• Tomoyuki Miyamoto, Kenichi Mori, FUMIO KOYAMA, Kenichi Iga. A study on hole transport in p-type GaInAsP/InP multilayer reflectors, The 1994 Int. Conf. on Solid State Devices and Materials, SSDM'94, Aug. 1994.
• H. Maekawa, T. Mukaihara, M. Araki, Y. Hayashi, N. Ohnoki, F. Koyama, K. Iga. Some performances of InGaAs/GaAlAs surface emitting lasers grown by MOCVD and improvement of p-doping in AlAs, 5th Optoelectronic Conf., OEC'94, 14D3-5, July 1994.
• S. W. Lim, T. Honda, K. Yanashima, K. Inoue, H. Munekata, H. Kukimoto, F. Koyama, K. Iga. Formation of p+-ZnSe contact layer by (Li, N) diffusion for MOCVD-grown II-VI inJunection lasers, 5th Optoelectronic Conf., OEC'94, PDII-5, pp. 24, July 1994.
• T. Hamano, T. Baba, F. Koyama, K. Iga. Spontaneous emission factors and its inJunection level dependences of Microcavity surface emitting lasers using quantum-films and boxes, 5th Optoelectronic Conf., OEC'94, 14D4-3, pp. 232-233, July 1994.
• A. Matsutani, F. Koyama, K. Iga. Measurement of sidewall roughness of InP etched by RIBE, 1994 IEEE/LEOS Summer Topical Meetings, LEOS Summer'91, T1.3,, pp. 26-27, July 1994.
• T. Baba, R.h Watanabe, K. Asano, N. Ishibashi, F. Koyama, K. Iga. Observation of photon recycling effect in quasi-closed cavity light emitters, 5th Optoelectronic Conf., OEC'94, 14D4-2, July 1994.
• T. Mukaihara, N. Ohnoki, F. Koyama, K. Iga. A novel polarization control structure for surface emitting lasers by a birefringent distributed Bragg reflector with a metal/dielectric polarizer, 13th Conf. on Lasers and Electro-Optics, CLEO'94, CMI2, May 1994.
• Kenichi Mori, Tomoyuki Miyamoto, Noriyuki Yokouchi, Yuichi Inaba, FUMIO KOYAMA, Kenichi Iga. Band discontinuity reduction of i-GaInAsP/p-InP for improving 1.55μm GaInAsP/InP surface emitting laser performances, 1994 Int. Conf. on Indium Phosphide and Related Materials, IPRM'94, Mar. 1994.
• H. Maekawa, T. Mukaihara, Y. Hayashi, N. Ohnoki, T. Tamanuki, F. Koyama, K. Iga. Resistance reduction of GaAs/AlAs distributed Bragg reflector for InGaAs/GaAlAs surface emitting lasers, 7th Int. Conf. on Metalorganic Vapor Phase Epitaxy, ICMOVPE VII, P3-7, 1994.
• T. Baba, Y. YoG., K. Suzuki, F. Koyama, K. Iga. Room temperature continuous wave lasing characteristics of GaInAsP/InP surface emitting laser, 19th European Conf. on Optical Communication, ECOC'93, Dec. 1993.
• T. Baba, Y. YoG., K. Suzuki, F. Koyama, K. Iga. Low threshold room temperature pulsed and -31° CW operations of 1.3μm GaInAsP/InP buried heterostructure surface emitting lasers, OFC/IOOC'93, OFC'93, PD28, Dec. 1993.
• T. Tamanuki, M. Kato, Y. Kaneko, H. Maekawa, T. Baba, F. Koyama, K. Iga. Threshold reduction of InGaAs/GaAlAs quantum-well laser using AlAs/GaAs multilayer distributed Bragg reflectors, OFC/IOOC'93, OFC'93, ThB3, Dec. 1993.
• Noriyuki Yokouchi, Yuichi Inaba, Takashi Uchida, Tomoyuki Miyamoto, Kenichi Mori, FUMIO KOYAMA, Kenichi Iga. Composition change in GaInAs/InP super-lattice growth by chemical beam epitaxy, 4th Int. Conf. on Chemical Beam Epitaxy and Related Growth Techniques,ICCBE-4, July 1993.
• Yuichi Inaba, Takashi Uchida, Noriyuki Yokouchi, Tomoyuki Miyamoto, Kenichi Mori, Fumio Koyama, Kenichi Iga. Growth of GaInAs(P)/InP multi-quantum barrier (MQB) by chemical beam epitaxy,, 4th Int. Conf. on Chemical Beam Epitaxy and Related Growth Techniques, ICCBE-4, July 1993.
• Tomoyuki Miyamoto, Takashi Uchida, Noriyuki Yokouchi, Yuichi Inaba, Kenichi Mori, Fumio Koyama, Kenichi Iga. Very low-threshold GaInAsP/InP surface emitting laser and its temperature characteristics, 12th Conf. on Lasers and Electro-Optics, CLEO'93, May 1993.
• Noriyuki Yokouchi, Takashi Uchida, Tomoyuki Miyamoto, Yuichi Inaba, Kenichi Mori, Fumio Koyama, Kenichi Iga. Loss and index change in GaInAs/InP multiple quantum well QCSE tuning element for surface emitting lasers, 5th Int. Conf. on Indium Phosphide and Related Materials, IPRM'93, Apr. 1993.
• T. Baba, Y. YoG., K. Suzuki, F. Koyama, K. Iga. First room temperature cw operation of GaInAsP/InP surface emitting laser, Quantum Optoelectronics Conf., QOE'93, D2, PostdeadlinePaper, Mar. 1993.
• N. Yokouchi, T. Miyamoto, T, Uchida, Y. Inaba, F. Koyama, K. Iga. GaInAsP/InP surface emitting lasers grown by chemical beam epitaxy and wavelength tuning by an employing an external reflector, Jpn. J. Appl. Phys., vol. 32, pp. 618-621, Jan. 1993.
• H. Tanobe, M. Oshikiri, M. Araki, F. Koyama, K. Iga. A preliminary study on MG./Si multilayer reflectors for improving thermal conductance in surface emitting lasers, IEEE Lasers and Electro-Optics Society 1992 Annual Meeting, LEOS'92, DLTA12.2, Nov. 1992.
• Tomoyuki Miyamoto, Takashi Uchida, Noriyuki Yokouchi, Yuichi Inaba, Fumio Koyama, Kenichi Iga. A study on gain-resonance matchinG.f CBE grown λ=1.5μm surface emitting lasers, IEEE Lasers and Electro-Optics Society 1992 Annual Meeting, LEOS'92, Nov. 1992.
• Takashi Uchida, Tomoyuki Miyamoto, Noriyuki Yokouchi, Yuichi Inaba, FUMIO KOYAMA, K. Iga. CBE grown 1.5µm GaInAsP/InP surface emitting lasers, 13th Int. Semiconductor Laser Conf., ISLC'92, Sept. 1992.
• A. Sasaki, T. Baba, K. Iga. Put-in microconnectors for alignment-free coupling of optical fiber arrays, IEEE Photon. Technol. Lett., vol. 4, no. 8, pp. 908-910, Aug. 1992.
• Noriyuki Yokouchi, Noriyuki Yokouchi, Takashi Uchida, Yuichi Inaba, FUMIO KOYAMA, Kenichi Iga. GaInAsP/InP surface emitting laser grown by CBE and wavelength tuning employing external reflector, 24th Int. Conf. on Solid State Devices and Materials,SSDM'92, Aug. 1992.
• T. Baba, K. Matsuoka, F. Koyama, K. Iga. Low threshold 1.3µm GaInAsP/InP flat-surface buried heterostructure surface emitting laser, 4th Optoelectronic Conf., OEC'92, 16C2-3, July 1992.
• Noriyuki Yokouchi, Takashi Uchida, Tomoyuki Miyamoto, Yuichi Inaba, FUMIO KOYAMA, K. Iga. Optical absorption measurement of highly beryllium-doped GaInAsP grown by chemical beam epitaxy, 4th Optoelectronic Conf., OEC'92, July 1992.
• T. Tamanuki, F. Koyama, K. Iga. Consideration on threshold and modulation characteristics of photon-recycled surface emitting lasers, 4th Optoelectronic Conf., OEC'92, 16C2-4, July 1992.
• T. Takagi, F. Koyama, K. Iga. Quantum reflection and tunneling in multi-quantum barrier, 18th Int. Quantum Electron. Conf., IQEC'92, MoE3, June 1992.
• S. Kubota, F. Koyama, K. Iga. Low threshold current density operation of a 1.3µm GaInAsP/InP transmission-type surface-emitting laser, 11th Conf. on Lasers and Electro-Optics, CLEO'92, JThD5, May 1992.
• T. Mukaihara, F. Koyama, K. Iga. Stress effect on polarization of surface emitting lasers, 3rd Topical MeetinG.n Integrated Photonics Research, IPR'92, MC5-1, Apr. 1992.
• Y. Suematsu, K. Iga, S. Arai. Advanced semiconductor lasers, Proc. IEEE, vol. 80, no. 3, pp. 383-397, Mar. 1992.
• T. Tamanuki, F. Koyama, K. Iga. Ultimate characteristics of micro-cavity surface emitting lasers, 3rd Microoptics Conf., MOC'91, L20, Dec. 1991.
• A. Matsutani, F. Koyama, K. Iga. Micro dry etching process for vertical cavity surface emitting lasers, AmE．an Vacuum Society Series, APCT'91, vol. 10, 227, pp. 112-115, Dec. 1991.
• F. Koyama, S. Kubota, K. Iga. GaAlAs/GaAs vertical surface emitting active filter, 13th Topical MeetinG.n Optical Amplifiers and Their Applications, OAA'91, FC2-1, Dec. 1991.
• F. Koyama, S. Kubota, K. Iga. GaAlAs/GaAs vertical surface emitting active filter, 13th Topical MeetinG.n Optical Amplifiers and Their Applications, OAA'91, FC2-1, Dec. 1991.
• M. Oshikiri, F. Koyama, K. Iga. In situ optical thickness monitoring in Si/SiO2multi-layer deposition for GaInAsP/InP surface emitting laser reflectors, IEEE Lasers and Electro-Optics Society 1991 Annual Meeting, LEOS'91, SDL14.5, Dec. 1991.
• T. Tamanuki, T. Tadokoro, K. Morito, F. Koyama, K. Iga. Micro-fabrication techniques for semiconductor lasers, SPIE'91, no. 1361-77, pp. 614-617, Dec. 1991.
• T. Takagi, F. Koyama, K. Iga. Design of modified multiple quantum barrier for 600 nm range AlGaInP lasers, 10th Conf. on Lasers and Electro-Optics, CLEO'91, CWP2, Dec. 1991.
• T. Baba, T. Hamano, F. Koyama, K. Iga. Spontaneous emission factor and lifetime of a microcavity DBR surface emitting laser with quantum wire structures, 10th Conf. on Lasers and Electro-Optics, CLEO'91, JTh-C4, Dec. 1991.
• M. Shimizu, T. Mukaihara, F. Koyama, K. Iga. A polarization control method for surface emitting lasers, 17th European Conf. on Optical Communication, ECOC'91, MoA1-4, Dec. 1991.
• K. Iga, T. Uchida, F. Koyama. CBE growth of lattice matched and strained GaInAs(P)/InP quantum wells and DBRs, 1991 IEEE/LEOS Summer Topical Meetings, LEOS Summer'91, MB.1, Dec. 1991.
• K. Iga, F. Koyama, A. Matsutani. RIBE and RIE for micro cavity surface emitting lasers-technology and damage characterization, 1991 IEEE/LEOS Summer Topical Meetings, LEOS Summer'91, ThC.1, Dec. 1991.
• T. Tamanuki, F. Koyama, K. Iga. RIBE and sulfur-passivated regrowth for GaAlAs/ GaAs BH lasers, 1991 IEEE/LEOS Summer Topical Meetings, LEOS Summer'91, TuB.5, Dec. 1991.
• T. Hamano, T. Baba, F. Koyama, K. Iga. Estimation of spontaneous emission factor and lifetime in microcavity surface emitting lasers, 3rd Microoptics Conf., MOC'91, J4, Dec. 1991.
• H. Tanobe, T. Tamanuki, T. Uchida, F. Koyama, K. Iga. A new spray wet etch process for micro-cavity GaAs/GaAlAs surface emitting lasers, 3rd Microoptics Conf., MOC'91, L9, Dec. 1991.
• T. Uchida, T. Miyamoto, T. Uchida, N. Yokouchi, F. Koyama, K. Iga. Photoluminescence characterization of GaxIn1-x As (0<x<0.32) strained quantum wells grown on InP by chemical beam epitaxy, 3rd Int. Conf. on Chemical Beam Epitaxy and Related Growth Techniques, ICCBE-3, Sept. 1991.
• T. Tamanuki, F. Koyama, K. Iga. Surface recombination reduction by (NH4) 2Sx-passivation in MOCVD regrowth for AlGaAs/GaAs BH lasers, 23th Int. Conf. on Solid State Devices and Materials, SSDM'91, PC1-3, Aug. 1991.
• T. Miyamoto, T. Uchida, F. Koyama, K. Iga. PL study on structure dependence of GaxIn1-xAs/InP strained multi-quantum wells grown by CBE, 23th Int. Conf. on Solid State Devices and Materials, SSDM'91, Aug. 1991.
• T. Takagi, F. Koyama, K. Iga. Electron wave reflection by multi-quantum barrier (MQB) 23th Int. Conf. on Solid State Devices and Materials, 23th Int. Conf. on Solid State Devices and Materials, SSDM'91, C-2-1, Aug. 1991.
• M. Shimizu, F. Koyama, K. Iga. BPM simulation of transverse mode characteristics in surface emitting laser, 2nd Topical MeetinG.n Integrated Photonics Research, IPR'91, ThI41, pp. 129, Apr. 1991.
• N. Yokouchi, T. Uchida, T. Miyamoto, F. Koyama, K. Iga. Ultra-thin GaxIn1-xAs/InP (0<x<0.47) layer growth by chemical beam epitaxy, 3rd Int. Conf. on Indium Phosphide and Related Materials, IPRM'91, Apr. 1991.
• K. Iga, F. Koyama. Potential performance of surface emitting lasers, IEEE Lasers and Electro-Optics Society 1990 Annual Meeting, LEOS'90, SDL1.1/MKK1, pp. 198, Nov. 1990.
• E. Ho, F. Koyama, K. Iga. Close-packed 3×3 surface emitting laser array grown by a two-step MOCVD, IEEE Lasers and Electro-Optics Society 1990 Annual Meeting, LEOS'90, SDL1.6/MKK6, pp. 203, Nov. 1990.
• F. Koyama, K. Morito, K. Iga. Consideration on intensity noise of GaAlAs/GaAs surface emitting laser, 12th Int. Semiconductor Laser Conf., ISLC'90, H-5, pp. 116-117, Sept. 1990.
• T. Baba, T. Hamano, F. Koyama, K. Iga. Spontaneous emission factor of a microcavity DBR surface emitting laser, 16th European Conf. on Optical Communication, ECOC'90, vol. 3, ThG-1.3, pp. 995-998, Sept. 1990.
• K. Iga, F. Koyama. Vertical cavity surface emitting lasers --- Device technology and future prospects ---, 22th Int. Conf. on Solid State Devices and Materials, SSDM'90, D-3-1, pp. 517-520, Aug. 1990.
• T. Uchida, T. Uchida, N. Yokouchi, K. Mise, F. Koyama, K. Iga. GaInAs/InP multi-quantum wells and strained super-lattices grown by chemical beam epitaxy, 22th Int. Conf. on Solid State Devices and Materials, SSDM'90, B-4-5, pp. 115-118, Aug. 1990.
• T. Uchida, T. Uchida, K. Mise, N. Yokouchi, F. Koyama, K. Iga. GaInAs/InP MQW and DBR growth for surface emitting lasers, 6th Int. Conf. Molecular Beam Epitaxy, ICMBE-6, PIV-21, Aug. 1990.
• F. Koyama, K. Iga. Spectral and modulation characteristics of vertical cavity surface emitting laser, 3rd Optoelectronic Conf., OEC'90, 13B1-1, pp. 196-197, July 1990.
• M. Shimizu, F. Koyama, K. Iga. BPM analysis for transverse mode stabilization of surface emitting laser, 3rd Optoelectronic Conf., OEC'90, 13B1-5, pp. 204-205, July 1990.
• T. Takagi, F. Koyama, K. Iga. Experimental verification of electron wave confinement by multi-quantum barrier (MQB), 3rd Optoelectronic Conf., OEC'90, PD-3, pp. 10-11, July 1990.
• K. Iga, F. Koyama, K. Morito, H. Tanobe. Phase and intensity noise of vertical cavity surface emitting laser, 9th Conf. on Lasers and Electro-Optics, CLEO'90, vol. 7, CFF2, pp. 502, May 1990.
• T. Uchida, T. Uchida, K. Mise, F. Koyama, K. Iga. Highly rate growth of Ga0.47In0.53As/InP by chemical beam epitaxy, 2nd Int. Conf. on Indium Phosphide and Related Materials, IPRM'90, TuA.7, pp. 144-147, Apr. 1990.
• T. Uchida, T. Uchida, N. Yokouchi, F. Koyama, K. Iga. CBE growth of GaInAs(P) /InP wafers for surface emitting laser, 5th Int. Conf. on Metalorganic Vapor Phase Epitaxy, ICMOVPE V, pp. 357-358, 1990.
• T. Uchida, K. Mise, T. Uchida, F. Koyama, K. Iga. High rate growth and wide range Be dopinG.f GaInAsP/InP chemical beam epitaxy, APCT'89, P-1, 99-102, Dec. 1989.
• H. Uenohara, F. Koyama, K. Iga. AlGaAlAs/GaAs multiquantum well (MQW) surface emitting inJunection laser, 15th European Conf. on Optical Communication, ECOC'89, WeB16-5, pp. 304-307, Dec. 1989.
• T. Uchida, T. Uchida, K. Mise, F. Koyama, K. Iga. Extremely high be doped GaInAs grown by chemical beam epitaxy, 2nd Int. Conf. on Chemical Beam Epitaxy and Related Growth Techniques, ICCBE-2, WP-7, Dec. 1989.
• F. Koyama, S. Kinoshita, K. Iga. Room temperature cw vertical cavity surface emitting laser and high power 2-D laser array, 8th Conf. on Lasers and Electro-Optics, CLEO'89, FC1, pp. 380, Dec. 1989.
• E. Ho, F. Koyama, K. Iga. Effective reflectivity and threshold of self-imaged surface emitting laser array, 2nd Microoptics Conf. and 8th Topical MeetinG.n Gradient-Index Optical Systems, MOC/GRIN'89, J2, pp. 242-24, Dec. 1989.
• FUMIO KOYAMA, S. Kinoshita, K. Iga. Lasing characteristics of room temperature cw GaAs surface emitting laser, 7th International Conference on Integrated Optics and Optical Fiber Communication, IOOC'89, vol. 1, No. 18B1-2, pp. 20-21, Dec. 1989.
• T. Tadokoro, F. Koyama, K. Iga. Low damage etchinG.f GaInAsP/InP and GaAlAs/GaAs by reactive ion beam etch and removal of residual damages, APCT'89, P-13, pp. 147-150, Dec. 1989.
• F. Koyama, K. Iga. Spectral behavior of vertical cavity surface emitting laser, Second Regional Symp. on Optoelectronics, RSOE'89, MoB-1, pp. 25-28, Dec. 1989.
• K. Iga, F. Koyama, S. Kinoshita. Surface emitting semiconductor laser array - its advantage and future, 35th National Symposium of the AmE．an Vacuum Society, EM-FrM6, Dec. 1988.
• T Sakaguchi, F. Koyama, K. Iga. Vertical cavity surface emitting laser with an AlGaAs/AiAs Bragg reflector, Electron Lett., vol. 24, no. 5, pp. 928-929, Dec. 1988.
• F. Koyama, S. Kinoshita, K. Iga. Room temperature cw operation of GaAs vertical cavity surface emitting laser, 2nd Optoelectronic Conf., OEC'88, PD-4, pp. 8-9, Oct. 1988.
• Kenichi Iga, Fumio Koyama, S. Kinoshita. Surface emitting semiconductor lasers, IEEE J. Quantum Electron., vol. QE-24, no. 9, pp. 1845-1855, Sept. 1988.
• F. Koyama, K. Iga. Frequency chirping in external modulators, IEEE J. Quantum Electron, vol. QE24, no. 9, pp. 1845-1855, Sept. 1988.
• K. Iga, F. Koyama, S. Kinoshita. Surface emitting semiconductor lasers, IEEE J. Quantum Electron, vol. QE24, no. 9, pp. 1845-1855, Sept. 1988.
• T. Sakaguchi, F. Koyama, K. Iga. A vertical cavity GaAs/AlAs DBR surface emitting laser and its lasing characteristics, 11th Int. Semiconductor Laser Conf., ISLC'88, N-1, pp. 162-163, Aug. 1988.
• M. Oshikiri, H. Kawasaki, F. Koyama, K. Iga. Reflectivity dependence of threshold current in GaInAsP/InP surface emitting laser, 16th Int. Quantum Electron. Conf., IQEC'88, PD-22, July 1988.
• T. Sakaguchi, M. Oshikiri, F. Koyama, K. Iga. TiO2 (or Si)/SiO2 dielectric multilayer reflector for surface emitting semiconductor lasers, Int. MeetinG.n Advanced Materials, K4.6, May 1988.
• F. Koyama, K. Tomomatsu, K. Iga. GaAs/GaAlAs CBH surface emitting lasers grown by MOCVD and a 2-D locked laser array, 8th Conf. on Lasers and Electro-Optics, CLEO'88, WO5, Apr. 1988.
• M. Shimizu, F. Koyama, K. Iga. Polarization characteristics of MOCVD-Grown GaAs/GaAlAs CBH surface emitting lasers, 9th Topical MeetinG.n Integrated and Guided-Wave Optics, IWG.'88, WA3, Mar. 1988.
• T. Tadokoro, F. Koyama, K. Iga. Classification of etching mechanism in reactive ion beam etch, The 32nd Int. Symposium on Electron Ion and Photon Beams, I5 J, 1988.
• K. Iga, S. Kinoshita, F. Koyama. Overview of the progress in surface emitting lasers, pical Conference on Compound Semiconductor Growth, rocessing and Devices for 1990's Gainesville, pp. 341-359, Oct. 1987.
• K. Iga, F. Koyama, S. Kinoshita. Surface emitting lasers and related electrooptic application, 13th European Conf. on Optical Communication, ECOC'87, pp. 3-10, Sept. 1987.
• I. Watanabe, F. Koyama, K. Iga. 77K CW operation (Ith=15mA) of GaInAsP/InP CBH surface-emitting laser, 13th European Conf. on Optical Communication, ECOC'87, pp. 31-34, Sept. 1987.
• H. Uenohara, K. Iga, F. Koyama. Electron reflectance and leakage of a multiquantum barrier, 7th Conf. on Lasers and Electro-Optics, CLEO'87, TUJ3, Apr. 1987.
• K. Iga, Seiji Uchiyama, S. Kinoshita, F. Koyama. Recent progress in surface-emitting lasers, WA6, Feb. 1987.
• Ke. Iga, S Kinoshita, F. Koyama. Microcavity GaAlAs/GaAs surface emitting laser with Ith=6mA, Electron. Lett., vol. 23, no. 3, pp. 134-136, Jan. 1987.
• F. Koyama, K. Iga. Frequency chirping in some types of external modulator, Optical Fiber Commun.Conf./6th International Conf. on Integrated Optics and Optical Commun., OFC/IOOC'87, WO4, Jan. 1987.
• Kenichi Iga, S. Kinoshita, FUMIO KOYAMA. Micro-cavity GaAlAs/GaAs surface emitting laser with Ith = 6mA, ISLC'86, PD-4, Oct. 1986.
• K. Iga, H. Uenohara, F. Koyama. Electron reflectance of multiquantum Barrier (MQB), Electron. Lett, vol. 22, no. 19, pp. 1008-1010, Sept. 1986.
• F. Koyama, H. Segawa, A Nakamura, T. Sakaguchi, K. Iga. MOCVD growth and characterization of GaAlAs/GaAs multi-heterostructure for surface emitting laser, 12th European Conf. on Optical Communication, ECOC'86, pp. 97-100, Sept. 1986.
• F. Koyama, H. Segawa, S. Kinoshita, H. Uenohara, T.Sakaguchi, A.Nakamura, K. Iga. GaAlAs/GaAs MOCVD growth device and materials, 18th Int. Conf. on Solid State Devices and Materials, SSDM'86, C-9-3, pp. 757-758, Aug. 1986.
• F. Koyama, K.Iga. Frequency chirpinG.f external modulation and its reduction, OFC'86, WBB5, Feb. 1986.
• K. Iga, F. Koyama. Ultrahigh-speed parametric modulation schemes of semiconductor lasers, OFC'86, WBB4, Feb. 1986.
• Kenichi Iga. Modulation limit of semiconductor lasers by some parametric modulation schemes, Trans. IECE of Japan, vol. 68, no. 7, pp. 417-420, Oct. 1985.
• H. Soda, Y. Motegi, K. Iga. GaInAsP/InP surface emitting injection lasers with short cavity length, IEEE J. Quantum Electron, vol. QE-19, no. 6, pp. 1035-1041, June 1983.
• Y Motegi, H. Soda, K. Iga. Surface emitting GainAsP/InP injection laser with short cavity length, Electron. Lett., vol. 18, no. 11, pp. 461-463, May 1982.
• M. Oikawa, M. Sanada, K. Iga, N. Yamamoto, K. Nishizawa. Array of distributed-index planar micro-lenses prepared from ion exchange technique, apan. J. of Appl. Phys., vol. 20, no. 4, pp. L296-L298, Apr. 1981.
• M. Oikawa, K. Iga, T. Sanada. A distributed-index planar micro-lens made of plastics, Japan. J. of Appl. Phys., vol. 20, no. 1, pp. L51-L54, Jan. 1981.
• K. Iga, B. I. Miller. C.W. operation of GaInAsP/InP laser with chemically etched mirror, Electron. Lett., vol. 16, no. 22, pp. 830-832, Oct. 1980.
• K. Iga, M. A. Pollack, B. I. Miller, R. J. Martin. GaInAsP/InP DH lasers with a chemically etched facet, IEEE J. of Quant. Elect, vol. QE-16, no. 10, pp. 1044-1047, Oct. 1980.
• L. A. Coldren, K. Iga, B. I. Miller, J. A. Rentschler. Integrated GaInAsP/InP laser formed by reactive-ion-etching, 38th Annual Device Research Conference, vol. IVB-5, June 1980.
• K. Iga, B. I. Miller. GaInAsP/InP laser with monolithically integrated monitoring detector, Electron. Lett., vol. 16, no. 9, pp. 342-343, Apr. 1980.
• Kenichi Iga. Theory for gradient-index imaging, Appl. Opt., vol. 19, no. 7, pp. 1039-1043, Apr. 1980.
• H. Soda, K. Iga, C. Kitahara, Y. Suematsu. GaInAsP/InP surface emitting injection lasers, Jpn. J. Appl. Phys., vol. 18, no. 12, pp. 2329-2330, Dec. 1979.
• K. Iga, T. Kambayashi, K. Wakao, C. Kitahara, K. Moriki. GaInAsP/InP Double-heterostructure planar LED's, IEEE Trans. on Electron Devices, vol. ED-26, no. 8, pp. 1227-1230, Aug. 1979.
• K. Iga, T. Kambayashi, K. Wakao, K. Moriki, C. Kitahara. GaInAsP/InP DH Lasers and Related Fabrication Techniques for Integration, IEEE J. of Quantum Electron., vol. QE-26, no. 8, pp. 707-710, Aug. 1979.
• Y. Takahashi, K. Iga. An analysis on single wavelength oscillation of semiconductor laser at high speed pulse modulation, Trans. IECE of Japan, vol. E61, no. 9, pp. 685-689, Sept. 1978.
• K. Iga, Y. Kokubun. Formulas for calculating the refractive index profile of optical fibers from their transverse interference patterns, Appl. Opt., vol. 17, no. 12, pp. 1972-1974, June 1978.
• Y. Itaya, Y. Suematsu, K. Iga. Carrier life measurement of GaInAsP/InP double-heterostructure lasers, Japan. J. Appl. Phys., vol. 16, no. 6, pp. 1057-1058, June 1977.
• K. Iga, N. Yamamoto. Plastic focusing fiber for imaging application, Appl. Opt., vol. 16, no. 5, pp. 1305-1311, May 1977.
• Y. Suematsu, K. Iga, S. Ito. A light beam waveguide using hyperbolic-type gas lens, IEEE Trans. MTT, vol. MTT-14, no. 12, pp. 657-665, Dec. 1966.
• Y. Suematsu, K. Iga. Mode conversion of optical beam transmission systems, IECE of Japan, vol. 49, no. 9, pp. 59-66, Sept. 1966.
• Y. Suematsu, K. Iga, Y. Fukinuki. Beam focusing in gas lenses, IECE of Japan, vol. 49, no. 4, pp. 232-238, Apr. 1966.
• Y. Suematsu, K.Iga. Experiment on quasi-fundamental mode oscillation of ruby laser, Proc. IEEE, vol. 52, no. 1, pp. 748-754, Apr. 1966.

国際会議発表 (査読なし・不明)

• Kenichi Iga. VCSEL: born small and grown big, Proc. SPIE, Vertical External Cavity Surface Emitting Lasers (VECSELs) X, SPIE, Vol. 11263, pp. 1126302-1 - 1126302-13, Mar. 2020.
• T.Honda, F.Koyama, K.Iga. Design consideration of GaN-based surface emitting lasers, Mat. Res. Soc. Symp. Proc., Vol. 449, pp. 1151-1159, 1997.

国内会議発表 (査読なし・不明)

• Kenichi Iga. Forty years of vertical-cavity surface-emitting laser: Invention and innovation, Japanese Journal of Applied Physics, The Japan Society of Applied Physics, Vol. 57, No. 8S2, pp. 1-7, Aug. 2018.
• 小山 二三夫, 伊賀 健一. 面発光レーザの進展, 電子情報通信学会レーザ・量子エレクトロニクス研究会（LQE) 半導体レーザ５０周年特別講演会, 電子情報通信学会信学技報, OPE2012-16、LQE2012-20（2012-06）, June 2012.
• 近藤崇, 荒井昌和, 宮本智之, 西山伸彦, 川口真生, 小山二三夫, 伊賀健一. 1.2µm帯高歪GaInAs/GaAs量子井戸面発光レーザの発振特性, 第62回応用物理学会学術講演会, Sept. 2001.
• 宮本智之, 川口真生, E. Gouardes, 近藤崇, 小山二三夫, 伊賀健一. GaInAs中間層を用いたGaInNAs量子井戸とレーザ特性, 第48回応用物理学関連連合講演会, Mar. 2001.
• 川口真生, 宮本智之, E. Gouardes, 近藤崇, 小山二三夫, 伊賀健一. GaInNAs量子井戸フォトルミネッセンスのヘテロ接合界面依存性, 第48回応用物理学関連連合講演会, Mar. 2001.
• 牧野茂樹, 宮本智之, 影山健生, 池永賀彦, 荒井昌和, 小山二三夫, 伊賀健一. CBE法による1.3 μm GaInNAs量子井戸レーザの熱アニールによる特性改善, 第48回応用物理学関連連合講演会, Mar. 2001.
• 川口真生, 宮本智之, E. Gouardes, 近藤崇, 小山二三夫, 伊賀健一. MOCVD法によるGaInNAsレーザのしきい値電流密度と温度特性, 第48回応用物理学関連連合講演会, Mar. 2001.
• 内田慶彦, 岩田雅年, 坂口孝浩, 吉田司, 宮本智之, 小山二三夫, 伊賀健一. GaN系面発光レーザ構造の光励起特性, 第61回応用物理学会学術講演会, Sept. 2000.
• 関口茂昭, 岡崎玄, 宮本智之, 小山二三夫, 伊賀健一. 全MOCVD成長によるトンネル接合埋め込み電流狭窄構造, 第61回応用物理学会学術講演会, Sept. 2000.
• 牧野茂樹, 宮本智之, 影山健生, 池永賀彦, 小山二三夫, 伊賀健一. CBE法による自己形成GaInNAs量子ドットの成長温度依存性, 第61回応用物理学会学術講演会, Sept. 2000.
• 近藤崇, Z.B. チェン, シュレンカーディトマー, 川口真生, グアルデゥエリック, 宮本智之, 小山二三夫, 伊賀健一. 1.2µm高歪系GaInAs/GaAs/AlGaAs量子井戸レーザの特性の評価, 第47回応用物理学関連連合講演会, Mar. 2000.
• 牧野茂樹, 宮本智之, 影山健生, 小山二三夫, 伊賀健一. CBE法による自己形成GaInNAs量子ドットの成長, 第47回応用物理学関連連合講演会, Mar. 2000.
• シュレンカーディトマー, 宮本智之, 陳誌標, 川口真生, 近藤崇, グアルドゥエリック, 小山二三夫, 伊賀健一. 新しい歪の効果を含む未混和領域計算, 第47回応用物理学関連連合講演会, Mar. 2000.
• 村上絢子, 関口茂昭, 宮本智之, 小山二三夫, 伊賀健一. 1.55µm帯光励起多波長レーザアレーの検討, 第47回応用物理学関連連合講演会, Mar. 2000.
• 関口茂昭, 木村忠良, 岡崎玄, 宮本智之, 小山二三夫, 伊賀健一. 長波長帯面発光レーザのためのトンネル接合破壊による電流狭窄構造 -機構解明と漏れ電流評価-, 第47回応用物理学関連連合講演会, Mar. 2000.
• 小山二三夫, シュレンカーディトマー, 宮本智之, 陳志標, 松谷 晃宏, 伊賀健一. 1.2µm帯GaInAs/GaAsレーザを用いた単一モード光ファイバ伝送, 1999年電子情報通信学会ソサイエティ大会, Sept. 1999.
• 木村忠良, 関口茂昭, 宮本智之, 小山二三夫, 伊賀健一. 長波長帯面発光レーザのためのトンネル接合選択破壊法による電流狭窄構造の形成と評価, 第60回応用物理学会学術講演会, Sept. 1999.
• 関口茂昭, 木村忠良, 岡崎玄, 宮本智之, 小山二三夫, 伊賀健一. 長波長帯面発光レーザにおけるトンネル接合による電流注入均一化･低抵抗化, 第60回応用物理学会学術講演会, Sept. 1999.
• 内田慶彦, 坂口孝浩, 井上彰, 岩田雅年, 森口雄一郎, 小山二三夫, 伊賀健一. GaN系発光デバイスのためのAlNを用いる電流狭窄構造の検討, 第46回応用物理学関連連合講演会, 30p-M-11, Mar. 1999.
• 松谷晃宏, 大槻 秀夫, 小山二三夫, 伊賀健一. Cl2/Xe誘導結合型プラズマ(ICP）によるInPの垂直平滑ドライエッチング, 第46回春季応用物理学会, 28p-ZC-7, Mar. 1999.
• 岩田雅年, 坂口孝浩, 井上彰, 森口雄一郎, 内田 慶彦, 小山二三夫, 伊賀健一. InGaN量子井戸構造におけるAlGaNバリア層の検討, 第46回春季応用物理学会, 28p-N-15, Mar. 1999.
• 小山二三夫, 大和屋武, 森昌太, 関口茂昭, 伊賀健一. 不均一量子井戸構造によるSLDの広帯域化, 第46回春季応用物理学会, 28p-B-14, Mar. 1999.
• 西山伸彦, 品田聡, 荒井昌和, 小山二三夫, 伊賀健一. 偏波制御面発光レーザのためのGaAs(311)B基板上InGaAs/GaAs量子井戸成長条件の検討, 第46回春季応用物理学会, 28a-P-8, Mar. 1999.
• シュレンカーディトマー, 宮本智之, 陳誌標, 小山二三夫, 伊賀健一. 1.2 nm GaInAs/GaAs高歪み量子井戸レーザ, 第46回応用物理学関連連合講演会, Mar. 1999.
• 森口雄一郎, 宮本智之, 坂口孝浩, 井上彰, 岩田雅年, 内田慶彦, 小山二三夫, 伊賀健一. MOVPE法によるSiO_{<small>2</small>}基板上へのGaN系結晶の成長(II)-InGaNの結晶成長と特性, 第46回応用物理学関連連合講演会, Mar. 1999.
• 宮本智之, 影山健生, 牧野茂樹, 小山二三夫, 伊賀健一. CBE成長によるGaInNAsのアニール効果と発光特性, 第46回応用物理学関連連合講演会, Mar. 1999.
• 木村忠良, 関口茂昭, 宮本智之, 小山二三夫, 伊賀健一. InP系面発光レーザのためのトンネル接合選択破壊法による電流狭窄構造, 第46回応用物理学関連連合講演会, Mar. 1999.
• 関口茂昭, 宮本智之, 小山二三夫, 伊賀健一. InP系長波長レーザにおける金属拡散によるAlAs/InPトンネル接合選択破壊現象の発見, 第46回応用物理学関連連合講演会, Mar. 1999.
• 稲葉雄一, 内田貴司, 横内則之, 宮本智之, 小山二三夫, 伊賀健一. CBE成長によるGaInAsP/InP多重量子障壁(MQB)の製作, 第53回応用物理学会学術講演会, 17p-ZF-17, Sept. 1992.
• 横内則之, 内田貴司, 宮本智之, 稲葉雄一, 小山二三夫, 伊賀健一. 外部鏡によるGaInAsP/InP面発光レーザの連続波長チューニング, 電子情報通信学会1992年秋季大会, Sept. 1992.
• 宮本智之, 内田貴司, 横内則之, 稲葉雄一, 森健一, 小山二三夫, 伊賀健一. CBE成長による1.5µm帯面発光レーザの利得-共振器波長の整合, 第53回応用物理学会学術講演会, Sept. 1992.
• 横内則之, 内田貴司, 宮本智之, 稲葉雄一, 小山二三夫, 伊賀健一. CBE成長によるBeドープGaInAsPの光吸収特性, 第53回応用物理学会学術講演会, Sept. 1992.
• 内田貴司, 横内則之, 宮本智之, 稲葉雄一, 小山二三夫, 伊賀健一. 化学ビーム成長(CBE)法によるGaInAsP/InP面発光レーザ, 電子情報通信学会1992年秋季大会, C-164, Mar. 1992.
• 内田貴司, 横内則之, 宮本智之, 稲葉雄一, 小山二三夫, 伊賀健一. CBE法によるGaInAsP/InP多層膜反射鏡の成長(II), 第39回応用物理学関連連合講演会, 31p-ZB-5, Mar. 1992.
• 横内則之, 内田貴司, 宮本智之, 稲葉雄一, 小山二三夫, 伊賀健一. GaInAsP/InP面発光レーザウェハのCBE成長, 第39回応用物理学関連連合講演会, 31p-ZB-2, Mar. 1992.
• 宮本智之, 内田貴司, 横内則之, 稲葉雄一, 小山二三夫, 伊賀健一. CBE法によるGaInAsP/InP面発光レーザ, 第39回応用物理学関連連合講演会, Mar. 1992.
• 内田貴司, 横内則之, 宮本智之, 稲葉雄一, 小山二三夫, 伊賀健一. CBE法におけるGaInAsPおよびInPへのベリリウムドーピング, 第52回応用物理学会学術講演会, 11p-W-12, Sept. 1991.
• 内田貴司, 内田俊一, 横内則之, 宮本智之, 小山二三夫, 伊賀健一. CBE法による変調ドープGaInAs/InP SCH量子井戸レーザ構造の成長, 第38回応用物理学関連連合講演会, 30a-SZK-17, Mar. 1991.
• 宮本智之, 内田俊一, 内田貴司, 小山二三夫, 伊賀健一. CBE法によるGaInAs/InP歪超格子の成長, 第38回応用物理学関連連合講演会, 30a-SZK-15, Mar. 1991.
• 横内則之, 内田俊一, 内田貴司, 宮本智之, 小山二三夫, 伊賀健一. CBE法による高成長速度時におけるGaInAs/InP多重量子井戸の成長, 第51回応用物理学会学術講演会, 27a-V-7, Sept. 1990.
• 坂口 孝浩, 小山二三夫, 伊賀健一. 半導体多層膜DBR面発光レーザの構成法に関する検討, 昭和63年電子情報通信学会秋季全国大会, 昭和63年電子情報通信学会秋季全国大会 講演論文集, No. C-168, pp. C-1-50, Sept. 1988.

学位論文

• 光ビーム導波系に関する研究,  本文,  博士(工学),  東京工業大学,  1968/03/26,   
• ルビーレーザの基本モード動作に関する研究,  修士(工学),  東京工業大学,  1965/03/26, 

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