@book{CTT100467994,
  author = {Koji Aizawa and Hiroshi ISHIWARA},
  title = {Ferroelectric BaMgF<sub>4</sub> Thin Films on Si Substrates: Growth, Characterization and Application to Memory Devices},
  publisher = {<i>Japanese Research Review for Pioneering</i>, Ternary and Multinary Compounds in the 21st Century},
  year = 2001,
}

@article{CTT100503310,
  author = {Koji Aizawa and Byung-Eun Park and Yoshihito Kawashima and Kazuhiro Takahashi and Hiroshi Ishiwara},
  title = {Effect of ferroelectric/HfO<sub>2</sub>/Si structures on electrical properties of ferroelectric-gate FETs},
  journal = {Abstracts of 2004 Mat. Res. Soc. Fall Meeting (Sympo. D ; Materials and Processes for Nonvolatile Memories), Boston},
  year = 2004,
}

@article{CTT100503305,
  author = {Koji Aizawa and Byung-Eun Park and Yoshihito Kawashima and Kazuhiro Takahashi and Hiroshi Ishiwara},
  title = {Impact of HfO<sub>2</sub> buffer layers on data retention characteristics of ferroelectric-gate field-effect transistors},
  journal = {Appl. Phys. Lett.},
  year = 2004,
}

@article{CTT100503328,
  author = {T. Takahashi and B-E Park and K. Aizawa and H. Ishiwara},
  title = {30-day-long data retention in ferroelectric-gate FET's with HfO<sub>2</sub> buffer layers},
  journal = {Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials},
  year = 2004,
}

@article{CTT100503308,
  author = {Koji AIZAWA and Sota KOBAYASHI and Hiroshi ISHIWARA and Kazuyuki SUZUKI and Kazumi KATO},
  title = {Ferroelectric-gate field effect transistors using (Y,Yb)MnO<sub>3</sub>/Y<sub>2</sub>O<sub>3</sub>/Si(111) structures for 1T-type FeRAMs},
  journal = {The 16^th^ International Symposium on Integrated Ferroelectrics (ISIF2004), Gyeongju},
  year = 2004,
}

@article{CTT100503303,
  author = {Koji AIZAWA and Hiroshi ISHIWARA},
  title = {Low Voltage Operation of Ferroelectric Capacitors using Sr-deficient and Praseodymium-substituted Strontium Bismuth Tantalate Ultra Thin Films},
  journal = {Integrated Ferroelectrics},
  year = 2004,
}

@article{CTT100503297,
  author = {會澤康治 and 高橋憲弘 and 田村哲朗 and 有本由弘 and 石原宏},
  title = {CVD HfO<sub>2</sub>薄膜をバッファ層に用いたSBT/HfO<sub>2</sub>/p-Si構造の作製と評価},
  journal = {第65回応用物理学会学術講演会講演予稿集},
  year = 2004,
}

@article{CTT100503299,
  author = {高橋憲弘 and 會澤康治 and 田村哲朗 and 有本由弘 and 石原宏},
  title = {(Bi,La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>/CVD HfO<sub>2</sub>構造を用いたMFISダイオードの電気的特性評価},
  journal = {第65回応用物理学会学術講演会講演予稿集},
  year = 2004,
}

@article{CTT100503301,
  author = {田渕良志明 and 朴炳垠 and 會澤康治 and 川島良仁 and 高橋憲弘 and 田村哲朗 and 鉾宏真 and 加藤一実 and 有本由弘 and 石原宏},
  title = {(Bi,Nd)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>/HfO<sub>2</sub>/Si(100)構造MFIS型強誘電体メモリの特性評価},
  journal = {第65回応用物理学会学術講演会講演予稿集},
  year = 2004,
}

@article{CTT100503285,
  author = {會澤康治 and 川島良仁 and 高橋憲弘 and 朴炳垠 and 石原宏},
  title = {SBT/HfO<sub>2</sub>構造を用いたMFIS DiodeおよびFETの作製と評価},
  journal = {第51回応用物理学関係連合講演会講演予稿集},
  year = 2004,
}

@article{CTT100503292,
  author = {高橋憲弘 and 朴炳垠 and 川島良仁 and 田渕良志明 and 會澤康治 and 石原宏},
  title = {(Bi,La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>/HfO<sub>2</sub>構造を用いたMFISダイオード及び1T型FETの電気的特性評価},
  journal = {第51回応用物理学関係連合講演会講演予稿集},
  year = 2004,
}

@article{CTT100503294,
  author = {田渕良志明 and 朴炳垠 and 會澤康治 and 川島良仁 and 高橋憲弘 and 加藤一実 and 有本由弘 and 石原宏},
  title = {(Bi,Nd)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>/HfO<sub>2</sub>/Si(100)構造MFIS型強誘電体メモリの作製とデーター保持特性の評価},
  journal = {第51回応用物理学関係連合講演会講演予稿集},
  year = 2004,
}

@article{CTT100550482,
  author = {Y.Tabuchi and K. Aizawa and T. Tamura and K. Takahashi and H. Hoko and K. Kato and Y. Arimoto and H. Ishiwara},
  title = {Characterization of (Bi,Nd)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>/HfO<sub>2</sub>/p-Type Si Structures for MFIS-FeRAM Application},
  journal = {Integrated Ferroelectrics},
  year = 2006,
}

@article{CTT100493406,
  author = {會澤康治 and 石原宏},
  title = {Pr-SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>薄膜の作製と電気的特性評価},
  journal = {第50回応用物理学関係連合講演会講演予稿集},
  year = 2003,
}

@article{CTT100493407,
  author = {會澤康治 and 石原宏},
  title = {Bi過剰前駆体溶液を用いたゾルゲルSBT極薄膜の形成と分極特性},
  journal = {第64回応用物理学会学術講演会講演予稿集},
  year = 2003,
}

@article{CTT100493411,
  author = {Koji AIZAWA and Hiroshi ISHIWARA},
  title = {Praseodymium-Substituted Strontium Bismuth Tantalate Films with Saturated Remanent Polarization at 1V},
  journal = {Jpn. J. Appl. Phys.},
  year = 2003,
}

@article{CTT100493554,
  author = {Koji AIZAWA and Hiroshi ISHIWARA},
  title = {Evaluation of ferroelectric/silicon interface state density in ferroelectric-gate transistors using a charge pumping method},
  journal = {Ferroelectrics},
  year = 2003,
}

@article{CTT100467998,
  author = {會澤康治 and 石原宏},
  title = {Ferroelectric BaMgF<sub>4</sub> Thin Films on Si Substrates : Characterization and Application to Memory Devices},
  journal = {2002年秋季　第63回応用物理学会学術講演会},
  year = 2002,
}

@article{CTT100452192,
  author = {Koji AIZAWA and Hiroshi ISHIWARA},
  title = {Memory effect in ferroelectric-gate field effect transistors using 0.1μm-thick silicon-on-insulator substrates},
  journal = {<I>Ferroelectrics</I>},
  year = 2002,
}

@article{CTT100467995,
  author = {會澤康治 and 川島良仁 and 石原宏},
  title = {Charge pumping法による強誘電体／Si構造の界面準位密度評価},
  journal = {2002年春季　第49回応用物理学関係連合講演会},
  year = 2002,
}

@article{CTT100467997,
  author = {會澤康治 and 小林宗太 and 石原宏},
  title = {SBT系強誘電体／Al<sub>2</sub>O<sub>3</sub>/Si構造MFISダイオードの電気的特性評価},
  journal = {2002年秋季　第63回応用物理学会学術講演会},
  year = 2002,
}

@article{CTT100452195,
  author = {會澤康治 and 石原宏},
  title = {薄膜SOI基板上に作製した強誘電体ゲートFETの評価},
  journal = {第48回応用物理学関係連合講演会　講演予稿集},
  year = 2001,
}

@article{CTT100452196,
  author = {會澤康治 and 川島良仁 and 木島健 and 石原宏},
  title = {新規強誘電体材料を用いた強誘電体ゲートFET},
  journal = {第62回応用物理学会学術講演会　講演予稿集},
  year = 2001,
}

@article{CTT100507621,
  author = {Eisuke Tokumitsu and Koji Aizawa and Kojiro Okamoto and Hiroshi Ishiwara},
  title = {Impact of face-to-face annealing in preparation of sol-gel-derived SrBi2Ta2O9 thin films},
  journal = {Appl. Phys. Lett.},
  year = 2000,
}

@article{CTT100439303,
  author = {Koji AIZAWA and Hiroshi ISHIWARA},
  title = {Correlation between ferroelectricity and grain structures of face-to-face annealed strontium bismuth tantalate thin films},
  journal = {<I>Japanese Journal of Applied Physics</I>},
  year = 2000,
}

@article{CTT100447507,
  author = {會澤康治 and 岡本浩次郎 and 徳光永輔 and 石原宏},
  title = {face-to-face annealing法によるゾルゲルSBT薄膜の形成と評価},
  journal = {第47回応用物理学関係連合講演会講演予稿集},
  year = 2000,
}

@article{CTT100447508,
  author = {會澤康治 and 石原宏},
  title = {face-to-face annealing法によるゾルゲルSBT薄膜のTEM観察},
  journal = {第61回応用物理学会学術講演会講演予稿集},
  year = 2000,
}

@article{CTT100439304,
  author = {Koji AIZAWA and Eisuke TOKUMITSU and Kojiro OKAMOTO and Hiroshi ISHIWARA},
  title = {Impact of face-to-face annealing in preparation of sol-gel-derived SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> thin films},
  journal = {Applied Physics Letters},
  year = 2000,
}

@article{CTT100447437,
  author = {會澤康治 and 岡本浩次郎 and 天野敦弘 and 徳光永輔 and 石原宏},
  title = {強誘電体ゲートFETのパルスdisturb特性(II)},
  journal = {第60回応用物理学会学術講演会講演予稿集},
  year = 1999,
}

@article{CTT100447436,
  author = {會澤康治 and 西山　淳 and 徳光永輔 and 石原　宏},
  title = {強誘電体ゲートFETのパルスdisturb特性},
  journal = {第46回応用物理学関係連合講演会講演予稿集},
  year = 1999,
}

@article{CTT100439305,
  author = {Koji AIZAWA and Hiroshi ISHIWARA},
  title = {Fabrication and characterization of MFSFET arrays using Al/BaMgF<sub>4</sub>/Si(111) structures},
  journal = {Integrated Ferroelectrics},
  year = 1999,
}

@article{CTT100535748,
  author = {Koji AIZAWA and Eisuke TOKUMITSU and Shigenori OHTAKE and Hiroshi ISHIWARA},
  title = {C-V Characteristics of Al/BaMgF4/Si(111) Diodes Fabricated by Dry Etching Process},
  journal = {Journal of the Korean Physical Society},
  year = 1998,
}

@misc{CTT100595313,
  author = {會澤康治},
  title = {半導体基板上への常誘電性および強誘電性弗化物薄膜の形成とデバイス応用に関する研究},
  year = 1996,
}

@misc{CTT100572806,
  author = {石原宏 and 會澤康治 and 青木　千恵子 and 鉾　宏真 and 田村　哲朗 and 丸山　研二},
  title = {強誘電体キャパシタ、強誘電体メモリ、及びそれらの製造方法},
  howpublished = {公開特許},
  year = 2007,
  month  = {},
  note   = {特願2005-302611(2005/10/18), 特開2007-115733(2007/05/10)}
}


@misc{CTT100573454,
  author = {石原宏 and 田渕　良志明 and 高橋　憲弘 and 長谷川　聡志 and 會澤康治 and 有本　由弘 and 田村　哲朗 and 鉾　宏真 and 山口　正臣 and 奈良　安雄},
  title = {強誘電体メモリ、多値データ記録方法、および多値データ読出し方法},
  howpublished = {公開特許},
  year = 2006,
  month  = {},
  note   = {特願2005-252504(2005/08/31), 特開2006-108648(2006/04/20)}
}




@phdthesis{CTT100595313,
  author = {會澤康治},
  title = {半導体基板上への常誘電性および強誘電性弗化物薄膜の形成とデバイス応用に関する研究},
  school = {東京工業大学},
  year = 1996,
}