@article{CTT100468416, author = {Byung-Eun Park and Hiroshi Ishiwara}, title = {Formation of (Bi,La)4Ti3O12 films on Si(100) substratres using LaAlO3 buffer layers}, journal = {Ferroelectrics (to be published)}, year = 2002, } @article{CTT100468415, author = {Byung-Eun Park and Hiroshi Ishiwara}, title = {Fabrication of MFIS Diodes Using BLT(Bi,La)4Ti3O12 and LaAlO3 Buffer Layers}, journal = {Ext. Abst. of 13th IEEE International Symposium on the Applications of Ferroelectrics (to be published)}, year = 2002, } @article{CTT100446404, author = {Byung-Eun PARK and Hiroshi ISHIWARA}, title = {Electrical properties of LaAlO3/Si and Sr0.8Bi2.2Ta2O9/LaAlO3/Si structures}, journal = {Appl. Phys. Lett.}, year = 2001, } @article{CTT100468413, author = {Byung-Eun Park and Hiroshi Ishiwara}, title = {Fabrication of MFIS Diodes Using Sol-Gel Derived SBT Films and LaAlO3 Buffer Layers}, journal = {Integrated Ferroelectrics}, year = 2001, } @article{CTT100446391, author = {Byung-Eun PARK and Hiroshi ISHIWARA}, title = {Fabrication of PZT Films on Si Substrates by Sol-Gel Method Using Y2O3 Buffer Layers}, journal = {Integrated Ferroelectrics}, year = 2001, } @article{CTT100417465, author = {Byung-Eun PARK and Shogo IMADA and Eisuke TOKUMITSU and Hiroshi ISHIWARA}, title = {Annealing Effect of the CeO2 Buffer Layers for PZT/CeO2 /Si(111) Structures}, journal = {Journal of the Korean Physical Society}, year = 1998, } @misc{CTT100596056, author = {BYUNG-EUN PARK}, title = {Fabrication of PbZrxTi1-xO3(PZT) films on Si substrates and their device application}, year = 1999, } @phdthesis{CTT100596056, author = {BYUNG-EUN PARK}, title = {Fabrication of PbZrxTi1-xO3(PZT) films on Si substrates and their device application}, school = {東京工業大学}, year = 1999, }