@article{CTT100468416,
author = {Byung-Eun Park and Hiroshi Ishiwara},
title = {Formation of (Bi,La)4Ti3O12 films on Si(100) substratres using LaAlO3 buffer layers},
journal = {Ferroelectrics (to be published)},
year = 2002,
}
@article{CTT100468415,
author = {Byung-Eun Park and Hiroshi Ishiwara},
title = {Fabrication of MFIS Diodes Using BLT(Bi,La)4Ti3O12 and LaAlO3 Buffer Layers},
journal = {Ext. Abst. of 13th IEEE International Symposium on the Applications of Ferroelectrics (to be published)},
year = 2002,
}
@article{CTT100446404,
author = {Byung-Eun PARK and Hiroshi ISHIWARA},
title = {Electrical properties of LaAlO3/Si and Sr0.8Bi2.2Ta2O9/LaAlO3/Si structures},
journal = {Appl. Phys. Lett.},
year = 2001,
}
@article{CTT100468413,
author = {Byung-Eun Park and Hiroshi Ishiwara},
title = {Fabrication of MFIS Diodes Using Sol-Gel Derived SBT Films and LaAlO3 Buffer Layers},
journal = {Integrated Ferroelectrics},
year = 2001,
}
@article{CTT100446391,
author = {Byung-Eun PARK and Hiroshi ISHIWARA},
title = {Fabrication of PZT Films on Si Substrates by Sol-Gel Method Using Y2O3 Buffer Layers},
journal = {Integrated Ferroelectrics},
year = 2001,
}
@article{CTT100417465,
author = {Byung-Eun PARK and Shogo IMADA and Eisuke TOKUMITSU and Hiroshi ISHIWARA},
title = {Annealing Effect of the CeO2 Buffer Layers for PZT/CeO2 /Si(111) Structures},
journal = {Journal of the Korean Physical Society},
year = 1998,
}
@misc{CTT100596056,
author = {BYUNG-EUN PARK},
title = {Fabrication of PbZrxTi1-xO3(PZT) films on Si substrates and their device application},
year = 1999,
}
@phdthesis{CTT100596056,
author = {BYUNG-EUN PARK},
title = {Fabrication of PbZrxTi1-xO3(PZT) films on Si substrates and their device application},
school = {東京工業大学},
year = 1999,
}