論文

• Byung-Eun Park, Hiroshi Ishiwara. Formation of (Bi,La)₄Ti₃O₁₂ films on Si(100) substratres using LaAlO₃ buffer layers, Ferroelectrics (to be published), 2002.
• Byung-Eun Park, Hiroshi Ishiwara. Fabrication of MFIS Diodes Using BLT(Bi,La)₄Ti₃O₁₂ and LaAlO₃ Buffer Layers, Ext. Abst. of 13th IEEE International Symposium on the Applications of Ferroelectrics (to be published), 2002.
• Byung-Eun PARK, Hiroshi ISHIWARA. Electrical properties of LaAlO₃/Si and Sr_0.8Bi_2.2Ta₂O₉/LaAlO₃/Si structures, Appl. Phys. Lett., Vol. 79, No. 6, pp. 806, 2001.
• Byung-Eun Park, Hiroshi Ishiwara. Fabrication of MFIS Diodes Using Sol-Gel Derived SBT Films and LaAlO₃ Buffer Layers, Integrated Ferroelectrics, Vol. 40, 201-209, 2001.
• Byung-Eun PARK, Hiroshi ISHIWARA. Fabrication of PZT Films on Si Substrates by Sol-Gel Method Using Y₂O₃ Buffer Layers, Integrated Ferroelectrics, Vol. 33, No. 1-4, pp. 1161, 2001.
• Byung-Eun PARK, Shogo IMADA, Eisuke TOKUMITSU, Hiroshi ISHIWARA. Annealing Effect of the CeO2 Buffer Layers for PZT/CeO2 /Si(111) Structures, Journal of the Korean Physical Society, Vol. 32, pp. S1390-S1392, Feb. 1998.

学位論文

• Fabrication of PbZr_xTi_1-xO₃(PZT) films on Si substrates and their device application,  本文,  Doctor of Engineering,  東京工業大学,  1999/--/--, 

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