@article{CTT100813954,
  author = {Yiming Lei and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Masayuki Furuhashi and Shingo Tomohisa and Satoshi Yamakawa and Kuniyuki Kakushima},
  title = {Effect of Lanthanum Silicate Interface Layer on the Electrical Characteristics of 4H-SiC Metal-Oxide-Semiconductor Capacitors},
  journal = {Microelectronics Reliability},
  year = 2018,
}

@article{CTT100813955,
  author = {Yiming Lei and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Masayuki Furuhashi and Shingo Tomohisa and Satoshi Yamakaw and Kuniyuki Kakushima},
  title = {Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing},
  journal = {Microelectronics Reliability},
  year = 2018,
}

@article{CTT100830585,
  author = {"Chunmeng Dou" and "Tomoya Shoji" and "Kazuhiro Nakajima" and "Kuniyuki Kakushima" and "Parhat Ahmet" and "Yoshinori Kataoka" and "Akira Nishiyama" and "Nobuyuki Sugii" and "Hitoshi Wakabayashi" and "Kazuo Tsutsui" and "Kenji Natori" and "Hiroshi Iwai"},
  title = {Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement},
  journal = {Microelectronics Reliability},
  year = 2014,
}

@inproceedings{CTT100855930,
  author = {Takuya Saraya and Kazuo Ito and Toshihiko Takakura and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Masanori Tsukuda and Katsumi Satoh and Tomoko Matsudai and Kuniyuki Kakushima and Takuya Hoshii and Kazuo Tsutsui and Hiroshi Iwai and Atsushi Ogura and Wataru Saito and Shin-ichi Nishizawa and Ichiro Omura and Hiromichi Ohashi and Toshiro Hiramoto},
  title = {3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100813959,
  author = {K. Kakushima and T. Hoshii and M. Watanabe and N. Shigyo and K. Furukawa and T. Saraya and T. Takakura and K. Itou and M. Fukui and S. Suzuki and K. Takeuchi and I. Muneta and H. Wakabayashi and Y. Numasawa and A. Ogura and S. Nishizawa and K. Tsutsui and T. Hiramoto and H. Ohashi and H. Iwai},
  title = {New methodology for evaluating minority carrier lifetime for process assessment},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813957,
  author = {C. Y. Su and T. Hoshii and I. Muneta and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima},
  title = {Interface State Density of Atomic Layer Deposited Al2O3 on Beta-Ga2O3},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813956,
  author = {H. Kataoka and H. Iwai and T. Hoshii and I. Muneta and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima},
  title = {A Defect Density Profile Extraction Method for GaN Epi-Wafers},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100830067,
  author = {Suguru Tatsunokuchi and Iriya Muneta and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Kuniyuki Kakushima},
  title = {Photovoltaic Properties of Lateral Si Nano Wall Solar Cells},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100830077,
  author = {Tomoyuki Suzuki and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Hiroshi Nohira and Kuniyuki Kakushima},
  title = {Properties of SiC Schottky Junction with Laminated Molybdenum/Carbon Electrode},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100830262,
  author = {M. Okamoto and K. Kakushima and Y. Kataoka and K. Natori and H. Wakabayashi and K. Tsutsui and H. Iwai and W. Saito},
  title = {Dependence of Ti/C Ratio on Ohmic contact with TiC electrode for AlGaN/GaN structure},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830263,
  author = {T. Shoji and K. Kakushima and Y. Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
  title = {Effect of Surface Potential Control and Interface States for Silicon Nanowire Solar Cells},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830265,
  author = {Kazuo Tsutsui and Masayuki Kamiya and Yusuke Takei and Wataru Saito and Kuniyuki Kakushima and Hitoshi Wakabayashi and Yoshinori Kataoka and Hiroshi Iwai},
  title = {Low-resistive Contact Formation on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830266,
  author = {Y. Takei and M. Okamoto and W. Saito and K. Tsutsui and K. Kakushima and H. Wakabayashi and Y. Kataoka and H. Iwai},
  title = {Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830267,
  author = {Akira Nakajima and Sin-ichi Nishizawa and Hiromichi Ohashi and Hiroaki Yonezawa and Kazuo Tsutsui and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai},
  title = {One-Chip Operation of GaN-Based p-Channel and N-Channel Heterojunction Field Effect Transistors},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830488,
  author = {Shuhei Hosoda and Kamale Tuokedaerhan and Kuniyuki Kakushima and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kenji Natori and Hiroshi Iwai},
  title = {Reliability of La-Silicate Mos Capacitors With Tungsten Carbide Gate Electrode},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100830548,
  author = {Youhei Miyata and Jun Kanehara and Hiroshi Nohira and Yudai Izumi and Takayuki Muro and Toyohiko Kinoshita and Parhat Ahmet and Kuniyuki Kakushima and Kazuo Tsutsui and Takeo Hattori1 and Hiroshi Iwai},
  title = {Analysis of Chemical Bonding States of Boron Doped in Si Fin Structures: Selective Observation on Top Surfaces and Sidewalls},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100830554,
  author = {Jun Kanehara and Youhei Miyata and Hiroshi Nohira and Yudai Izumi and Takayuki Muro and Toyohiko Kinoshita and Parhat Ahmet and Kuniyuki Kakushima and Kazuo Tsutsui and Takeo Hattori and Hiroshi Iwai},
  title = {Chemical Bonding States of As in Si Shallow Junctions Detected by Soft X-ray Photoelectron Spectroscopy and their Profiles},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100830559,
  author = {Youhei Miyata and Jun Kanehara and Hiroshi Nohira and Yudai Izumi and Takayuki Muro and Toyohiko Kinoshita and Parhat Ahmet and Kuniyuki Kakushima and Kazuo Tsutsui and Takeo Hattori and Hiroshi Iwai},
  title = {Soft X-ray Photoelectron Spectroscopy on Chemical Bonding States of Boron Doped in Si Fin Structures},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100830568,
  author = {Parhat Ahmet and Takashi Shiozawa and Koji Nagahiro and Takahiro Nagata and Kuniyuki Kakushima and Kazuo Tsutsui and Toyohiro Chikyow and Hiroshi Iwai},
  title = {Ni silicidation on Heavily Doped Si Substrates},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830659,
  author = {Yoshisa Ohishi and Kohei Noguchi and Kuniyuki  Kakushima and Parhat Ahmet and Kazuo Tsutsui and Nobuyuki Sugii and Takeo Hattori and Hiroshi Iwai},
  title = {Schottky Barrier Height Modulation of Ni Silicide/Si Contacts by Insertion of Thin Er or Pt Layers},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830643,
  author = {Kazuo Tsutsui and Masamitsu Watanabe and Yasumasa Nakagawa and Kazunori Sakai and Takayuki Kai and Cheng-Guo Jin and Yuichiro Sasaki and Kuniyuki Kakushima and Parhat Ahmet and Bunji Mizuno and Takeo Hattori and Hiroshi Iwai.},
  title = {Profiling of Carrier Properties for Shallow Junctions Using a New Sub-nanometer Step-by-step Etching Technique},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830660,
  author = {Kuniyuki Kakushima and Kouichi Okamoto and Manabu Adachi and Kiichi Tachi and Jaeyeol Song and Soushi Sato and Takamasa Kawanago and Parhat Ahmet and Kazuo Tsutsui and Nobuyuki Sugii and Takeo Hattori and Hiroshi Iwai},
  title = {Band Bending Measurement of HfO2/SiO2/Si Capacitor with ultra-thin La2O3 Insertion by XPS},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100830663,
  author = {Takashi Shiozawa and Koji Nagahiro and Kazuo Tsutsui and Parhat Ahmet and Kuniyuki Kakushima and Hiroshi Iwai},
  title = {Improvement of Thermal Stability of Ni Silicide by Al Interlayer Deposition},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100830712,
  author = {J. Molina and K. Tachi and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and I. Hiroshi},
  title = {Charge Trapping Characteristics of W-La2O3-nSi Mis Capacitors After Post-Metallization Annealing PMA in N2},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100830718,
  author = {Youichi Kobayashi and Ruifei Xiang and Kazuo Tsutsui and Hiroshi Iwai},
  title = {Formation of heat resistant Ni silicide by additional Hf layers},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100830722,
  author = {Ikmi Kashiwagi and Chizuru Ohshima and Yongshik Kim and Shun-ichiro Ohmi and Kazuo Tsutsui and Hiroshi Iwai},
  title = {Dependence of Gd2O3 Thin Film Properties on Si Substrate Orienteation},
  booktitle = {},
  year = 2002,
}