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@inproceedings{CTT100661710,
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  title = {InGaN量子井戸構造におけるAlGaNバリア層の検討},
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  year = 1999,
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@inproceedings{CTT100661903,
  author = {T. Sakaguchi and T. Shirasawa and N. Mochida and A. Inoue and MaS. Iwata and T. Honda and F. Koyama and K. Iga},
  title = {Highly reflective AlN/GaN and ZrO2/SiO2 multilayer distributed Bragg reflectors for InGaN/GaN surface emitting lasers},
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  year = 1998,
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@inproceedings{CTT100661964,
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  title = {InGaN selective MOCVD growth and polycrystalline formation on SiO2-patterned sapphire substrate},
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  year = 1998,
}