@article{CTT100695027,
  author = {R. Nakane and Y. Shuto and H. Sukegawa and Z.C. Wen and S. Yamamoto and S. Mitani and M. Tanaka and K. Inomata and S. Sugahara},
  title = {Fabrication of pseudo-spin-MOSFETs using a multi-project wafer CMOS chip},
  journal = {Solid-State Electronics},
  year = 2014,
}

@article{CTT100640880,
  author = {Y. Takamura and K. Hayashi and Y. Shuto and R. Nakane and S. Sugahara},
  title = {Fabrication of High-Quality Co2FeSi/SiOxNy/Si(100) Tunnel Contacts Using Radical-Oxynitridation-Formed SiOxNy Barrier for Si-Based Spin Transistors},
  journal = {J. Electron. Mater.},
  year = 2012,
}

@article{CTT100641000,
  author = {Y. Takamura and T. Sakurai and R. Nakane and Y. Shuto and S. Sugahara},
  title = {Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films formed by rapid thermal annealing},
  journal = {J. Appl. Phys.},
  year = 2011,
}

@article{CTT100619517,
  author = {Y. Takamura and R. Nakane and S. Sugahara},
  title = {Quantitative analysis of atomic disorders in full-Heusler Co2FeSi alloy thin films using x-ray diffraction with Co Kα and Cu Kα sources},
  journal = {J. Appl. Phys.},
  year = 2010,
}

@article{CTT100619518,
  author = {K. Hayashi and Y. Takamura and R. Nakane and S. Sugahara},
  title = {Formation of Co2FeSi/SiOxNy/Si tunnel junctions for Si-based spin transistors},
  journal = {J. Appl. Phys.},
  year = 2010,
}

@article{CTT100629984,
  author = {Y. Shuto and R. Nakane and W. H. Wang and H. Sukegawa and S. Yamamoto and M. Tanaka and K. Inomata and S. Sugahara},
  title = {A New Spin-Functional Metal-Oxide-Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology: Pseudo-Spin-MOSFET},
  journal = {Appl. Phys. Exp.},
  year = 2010,
}

@article{CTT100583529,
  author = {Y. Takamura and R. Nakane and S. Sugahara},
  title = {Analysis of L2<sub>1</sub>-ordering in full-Heusler Co<sub>2</sub>FeSi alloy thin films formed by rapid thermal annealing},
  journal = {J. Appl. Phys.},
  year = 2009,
}

@article{CTT100583533,
  author = {Y.  Takamura and A. Nishijima and Y. Nagahama and R. Nakane and S. Sugahara},
  title = {Formation of Si- and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors},
  journal = {ECS Trans.},
  year = 2008,
}

@article{CTT100589205,
  author = {Y. Takamura and R. Nakane and H. Munekata and S. Sugahara},
  title = {Characterization of Half-Metallic L2<sub>1</sub>-Phase Co<sub>2</sub>FeSi Full-Heusler Alloy Thin Films Formed by Rapid Thermal Annealing},
  journal = {J. Appl. Phys.},
  year = 2008,
}

@article{CTT100564106,
  author = {S. Takagi and T. Irisawa and T. Tezuka and T. Numata and S. Nakaharai and N. Hirashita and Y. Moriyama and K. Usuda and E. Toyoda and S. Dissanayake and M. Shichijo and R. Nakane and S. Sugahara and M. Takenaka and N. Sugiyama},
  title = {Carrier-transport-enhanced channel CMOS for improved power consumption and performance},
  journal = {IEEE Trans. Electron Devices},
  year = 2008,
}

@article{CTT100564099,
  author = {M. Shichijo and R. Nakane and S. Sugahara and S. Takagi},
  title = {Fabrication of III-V-O-I (III-V on Insulator) structures on Si using micro-channel epitaxy with a two-step growth technique},
  journal = {Jpn. J. Appl. Phys.},
  year = 2007,
}

@inproceedings{CTT100845065,
  author = {田中雅明 and Pham Nam Hai and 中根了昌 and 大矢忍 and 吉田博},
  title = {強磁性量子ヘテロ構造による物性機能の創出と不揮発・低消費電力スピンデバイスへの応用},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100672263,
  author = {Masaaki Tanaka and Shinobu Ohya and Pham Nam Hai and Ryosyo Nakane},
  title = {(Invited) Spintronics materials and devices - ferromagnetic semiconductors and hetero structures},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100672297,
  author = {Masaaki Tanaka and Shinobu Ohya and Ryosyo Nakane and Pham Nam Hai and Shinsuke Yada and Ryota Akiyama and Yoshisuke Ban and Shoichi Sato and Iriya Muneta and Ryohei Okazaki and Le Duc Anh},
  title = {Spintronics: Materials and Devices: A New Spin on Semiconductors - Spintronics Research Opens the Way to New Semiconductor Technology},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100619519,
  author = {Y. Takamura and T. Sakurai and R. Nakane and Y. Shuto and S. Sugahara},
  title = {Comparative study of full-Heusler Co2FeSi and Co2FeGe alloy thin films formed by rapid thermal annealing},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100619523,
  author = {櫻井 卓也 and 高村 陽太 and 中根 了昌 and 周藤 悠介 and 菅原 聡},
  title = {RTAによるフルホイスラー合金Co2FeGe薄膜のエピタキシャル形成},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100629985,
  author = {Y. Shuto and R. Nakane and W. H. Wang and H. Sukegawa and S. Yamamoto and M. Tanaka and K. Inomata and S. Sugahara},
  title = {A new spin-functional MOSFET based on MTJ technology: Pseudo-spin-MOSFET},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100619521,
  author = {Y. Takamura and R. Nakane and S. Sugahara},
  title = {Disordered structures in full-Heusler Co2FeSi alloy thin films formed by rapid thermal annealing},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100619520,
  author = {T. Sakurai and Y. Takamura and R. Nakane and Y. Shuto and S. Sugahara},
  title = {Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films by rapid thermal annealing},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100629972,
  author = {周藤悠介 and 中根了昌 and Wenhong Wang and 介川裕章 and 山本修一郎 and 田中雅明 and 猪俣浩一郎 and 菅原 聡},
  title = {擬似スピンMOSFETの作製と評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100629978,
  author = {林建吾 and 高村陽太 and 中根了昌 and 菅原聡},
  title = {Co2FeSi/SiOxNy/Siトンネル接合の形成とその構造評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100672333,
  author = {田中 雅明 and 大矢 忍 and 中根 了昌 and ファム ナム ハイ and 矢田 慎介 and 秋山 了太 and 國谷 瞬 and 佐藤 彰一 and 宗田 伊理也},
  title = {スピン偏極電流制御デバイスと材料物性の研究},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100605436,
  author = {Y. Shuto and R. Nakane and H. Sukegawa and S. Yamamoto and M. Tanaka and K. Inomata and S. Sugahara},
  title = {Fabrication and characterization of pseudo-spin-MOSFETs},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100605413,
  author = {K. Hayashi and Y. Takamura and R. Nakane and S. Sugahara},
  title = {Preparation and characterization of full-Heusler Co2FeSi alloy thin films on amorphous insulator films},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100583570,
  author = {林建吾 and 高村陽太 and 中根了昌 and 菅原聡},
  title = {極薄絶縁膜上へのフルホイスラー合金Co2FeSiの形成とその評価},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100583566,
  author = {高村陽太 and 中根了昌 and 周藤悠介 and 菅原聡},
  title = {不純物偏析技術を用いたCo2FeSiソース/ドレインMOSFETの作製と評価},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100583580,
  author = {林建吾 and 高村陽太 and 中根了昌 and 菅原聡},
  title = {非晶質絶縁膜上へのフルホイスラー合金Co2FeSiの形成と評価},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100672346,
  author = {田中 雅明 and 中根 了昌 and 大矢 忍 and A. M. ナズムル and ファム ナム ハイ and 矢田 慎介 and 遠藤 裕幸},
  title = {スピン偏極電流制御デバイスと材料物性の研究},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100583552,
  author = {Y. Takamura and R. Nakane and S. Sugahara},
  title = {Analysis of L21-ordering in full-Heusler Co2FeSi alloy thin films formed by rapid thermal annealing},
  booktitle = {53rd Annual Conference on Magnetism and Magnetic Materials (MMM2008)},
  year = 2008,
}

@inproceedings{CTT100583559,
  author = {Y. Takamura and Y. Nagahama and A. Nishijima and R. Nakane and S. Sugahara},
  title = {Formation of Si- and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors},
  booktitle = {Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME2008)},
  year = 2008,
}

@inproceedings{CTT100583517,
  author = {菅原 聡 and 高村 陽太 and 中根 了昌 and 周藤悠介 and 山本 修一郎},
  title = {スピンMOSFET を用いたスピントランジスタ・エレクトロニクス},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100583585,
  author = {髙村陽太 and 中根了昌 and 菅原聡},
  title = {RTAによって作製したフルホイスラー合金Co<sub>2</sub>FeSiの規則度},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100583521,
  author = {中根了昌 and 原田智之 and 杉浦邦晃 and 菅原聡 and 田中雅明},
  title = {シリコンMOS反転層へのスピン注入とスピンMOSFETへの応用},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100669709,
  author = {林健吾 and 高村陽太 and 中根了昌 and 菅原聡},
  title = {非晶質絶縁膜上に形成したフルホイスラー合金Co2FeSiの結晶構造評価},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100672383,
  author = {ファム ナム ハイ and 大矢忍 and 中根了昌 and A.M. ナズムル and 矢田慎介 and 原田智之 and 遠藤裕幸 and 田中雅明},
  title = {スピン偏極電流制御デバイスとその材料物性の研究：閃亜鉛鉱型MnAs微粒子を含む半導体ナノ構造における巨大な磁気抵抗効果とスピン起電力},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100589210,
  author = {Y. Takamura and A. Nishijima and Y. Nagahama and R. Nakane and S. Sugahara},
  title = {Fabrication Technique of Si- and Ge-based Full-Heusler Alloys for Half-metallic Source/Drain Spin MOSFETs},
  booktitle = {The 4th Intl. Nanotechnology Conf. on Communication and Cooperation (INC4)},
  year = 2008,
}

@inproceedings{CTT100583601,
  author = {森井清仁 and Sanjeewa Dissanayake and 田辺聡 and 中根了昌 and 竹中充 and 菅原聡 and 高木信一},
  title = {メタルソース・ドレインnチャネルGOI MOSFETのチャネル電子移動度測定},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100583602,
  author = {田辺聡 and 中北要佑 and 原田智之 and Sanjeewa Dissanayake and 中根了昌 and 竹中充 and 菅原聡 and 高木信一},
  title = {GOI pMOSFETの正孔反転層における移動度の評価},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100583598,
  author = {高村陽太 and 長浜陽平 and 西島輝 and 中根了昌 and 宗片比呂夫 and 菅原聡},
  title = {RTAを用いて作製したフルホイスラー合金Co2FeSi、Co2FeGeの構造},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100669710,
  author = {高村陽太 and 西島輝 and 長浜陽平 and 中根了昌 and 宗片比呂夫 and 菅原聡},
  title = {Rapid Thermal Annealingを用いたフルホイスラー合金の作製と評価},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100564111,
  author = {S. Takagi and H. Matsubara and M. Nishikawa and T. Sasada and R. Nakane and S. Sugahara and M. Takenaka},
  title = {Superior MOS Interface Properties of GeO2/Ge Structures Fabricated by Ozone Oxidation},
  booktitle = {The 5th Intl. Symp. on Control of Semiconductor Interfaces -for Next Generation ULSI Process Integrations- (ISCSI-V)},
  year = 2007,
}

@inproceedings{CTT100559711,
  author = {Y. Takamura and R. Nakane and H. Munekata and S. Sugahara},
  title = {Preparation of full-Heusler alloys on silicon-on-insulator substrates employing rapid thermal annealing},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100564109,
  author = {S. Takagi and T. Uehara and S. Tanabe and H. Matsubara and R. Nakane and M. Takenaka and S. Sugahara},
  title = {Effects of Atomic Hydrogen Annealing on Reduction of Leakage Current in Ultrathin Si/Ge/Si-On-Insulator Metal Source/Drain p-Channel MOSFETs},
  booktitle = {34th International Symposium on Compound Semiconductors (ISCS2007)},
  year = 2007,
}

@inproceedings{CTT100564119,
  author = {中根了昌 and 田中雅明 and 菅原聡},
  title = {Siキャップ層による強磁性Fe3Si薄膜形成温度の低温化},
  booktitle = {第68回応用物理学会学術講演会},
  year = 2007,
}

@inproceedings{CTT100548143,
  author = {高村陽太 and 長浜陽平 and 中根了昌 and 宗片比呂夫 and 菅原聡},
  title = {RTAを用いた非晶質絶縁膜上へのホイスラー合金の形成とその評価},
  booktitle = {第68回応用物理学会学術講演会},
  year = 2007,
}

@inproceedings{CTT100564116,
  author = {星井拓也 and 出浦桃子 and 杉山正和 and 中根了昌 and 菅原聡 and 竹中充 and 中野義昭 and 高木信一},
  title = {微小孔を介したSi 基板上InGaAs 成長におけるモフォロジー向上},
  booktitle = {第68回応用物理学会学術講演会},
  year = 2007,
}

@inproceedings{CTT100548144,
  author = {高村陽太 and 西島輝 and 中根了昌 and 宗片比呂夫 and 菅原聡},
  title = {Germanium-on-insulator (GOI)基板を用いたホイスラー合金の作製とその評価},
  booktitle = {第68回応用物理学会学術講演会},
  year = 2007,
}

@inproceedings{CTT100563968,
  author = {高村陽太 and 中根了昌 and 宗片比呂夫 and 菅原聡},
  title = {Silicon-on-insulator (SOI) 基板を用いたホイスラー合金の作製とその磁性評価},
  booktitle = {第54回応用物理学関係連合講演会},
  year = 2007,
}

@inproceedings{CTT100672470,
  author = {田中 雅明 and 周藤 悠介 and 矢田 慎介 and 杉浦 邦晃 and ファム ナム ハイ and 横山 正史 and 大矢 忍 and 中根 了昌 and 菅原 聡},
  title = {半導体スピントロニクス・ヘテロ構造電子デバイスの研究},
  booktitle = {},
  year = 2006,
}