@inproceedings{CTT100669174, author = {宋 禛漢 and Kazuki Matsumoto and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and 杉井信之 and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI}, title = {Resistivity of Ni silicide nanowires and its dependence on Ni film thickness used for the formation}, booktitle = {ECS Transactions}, year = 2013, } @inproceedings{CTT100654573, author = {竇春萌 and Soshi Sato and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI}, title = {Si nanowire FET with asymmetric channel}, booktitle = {}, year = 2013, } @inproceedings{CTT100654574, author = {Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI}, title = {An analytical model of a tunnel FET with Schottky junction}, booktitle = {}, year = 2013, } @inproceedings{CTT100654576, author = {K.Tuokedaerhan and 金田翼 and Kuniyuki KAKUSHIMA and Ahmet Parhat and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI}, title = {Impact of annealing ambient for La2O3/Si capacitor}, booktitle = {}, year = 2013, } @inproceedings{CTT100654577, author = {来山大祐 and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI}, title = {[Effect of Silicate Formation at Metal Gate/High-k Interface on Electrical Characteristics of La2O3 gated MOS Devices}, booktitle = {}, year = 2013, } @inproceedings{CTT100654579, author = {中島一裕 and Wei Li and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI}, title = {Interface state density measurements of 3D silicon channel by charge pumping method}, booktitle = {}, year = 2013, } @inproceedings{CTT100654580, author = {中島一裕 and Wei Li and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI}, title = {Interface state density measurements of 3D silicon channel by charge pumping method}, booktitle = {}, year = 2013, } @inproceedings{CTT100654582, author = {Ryuji Hosoi and Yuya Suzuki and ダリューシュザデ and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI}, title = {A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method}, booktitle = {}, year = 2013, } @inproceedings{CTT100654593, author = {Kazuki Matsumoto and 小山将央 and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI}, title = {Ni silicidation for Si fin and nanowire structures}, booktitle = {}, year = 2013, } @inproceedings{CTT100654594, author = {吉原亮 and Yuta Tamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI}, title = {Electrical characterization of atomically flat NiSi2 Schottky diode}, booktitle = {}, year = 2013, } @inproceedings{CTT100654583, author = {Wei Li and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI}, title = {Interface state density measurements of 3D silicon channel by charge pumping method}, booktitle = {}, year = 2013, } @inproceedings{CTT100654585, author = {shinichi kano and 竇春萌 and unknown unknown and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI}, title = {Impact of metal electrode material on resistive switching properties of Ce oxides}, booktitle = {}, year = 2013, } @inproceedings{CTT100654588, author = {田中祐樹 and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI}, title = {Impact of annealing on structural change in amorphous carbon: effect of Fe catalyst}, booktitle = {}, year = 2013, } @inproceedings{CTT100654591, author = {Kana Tsuneishi and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI}, title = {Electrical properties of Tm2O3 gate dielectric and its scaling issues}, booktitle = {}, year = 2013, } @inproceedings{CTT100654592, author = {Michihiro Hosoda and Yeonghun Lee and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI}, title = {Size dependent phonon limited electron mobility of Si nanowire}, booktitle = {}, year = 2013, } @inproceedings{CTT100567350, author = {パールハット アヘメト and 筒井一生 and 角嶋邦之 and 杉井 信之 and 知京 豊裕 and 服部健雄 and 長田 貴弘 and 岩井洋}, title = {高濃度n+-Si 及びp+-Si基板上のNiシリサイドの熱安定性の違い}, booktitle = {春季第55回応用物理学会学術講演会予稿集}, year = 2008, } @inproceedings{CTT100567354, author = {舘喜一 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋}, title = {Sub-1.0nm EOTにおけるW/La2O3ゲートスタックnMOSFETの電子移動度解析}, booktitle = {春季第55回応用物理学会学術講演会予稿集}, year = 2008, }