論文

• Kentaro Doi, Yutaka Mikazuki, Shinya Sugino, Tatsuki Doi, Pawel Szarek, Masato Senami, Kenji Shiraishi, HIROSHI IWAI, Naoto Umezawa, 知京豊裕, Keisaku Yamada, Akitomo Tachibana. Electronic structure study of local dielectric properties of lanthanoid oxide, clusters, JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 47, pp. 205-211, Jan. 2008.

国際会議発表 (査読有り)

• T. Nakayama, Kuniyuki KAKUSHIMA, O. Nakatsuka, Y. Machida, S. Sotome, T. Matsuki, Kenji Ohmori, HIROSHI IWAI, S. Zaima, 知京豊裕, Kenji Shiraishi, Keisaku Yamada. Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-Devices based on Fundamental Physics of Why Silicides Exist in Nature, 2010 IEDM, Dec. 2010.
• Takahiro Nagata, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, 知京豊裕, HIROSHI IWAI. On the thermal stability of nicket silicides, Future Trends in Microelectronics(FTM-2009) Workshop, June 2009.

国際会議発表 (査読なし・不明)

• Naoto Umezawa, Kenji Shiraishi, Kuniyuki KAKUSHIMA, Kenji Ohmori, Keisaku Yamada, 知京豊裕, HIROSHI IWAI. Relation between solubility of silicon in high-k oxides and the effect of Fermi level pinning, ECS 213th Meeting, May 2008.

国内会議発表 (査読なし・不明)

• Miyuki Kouda, Naoto Umezawa, Kuniyuki KAKUSHIMA, Hiroshi Nohira, Ahmet Parhat, Kenji Shiraishi, 知京豊裕, Keisaku Yamada, HIROSHI IWAI. Charged defects reduction in gate insulator with multivalent materials, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• パールハット アヘメト, 筒井一生, 角嶋邦之, 杉井 信之, 知京 豊裕, 服部健雄, 長田 貴弘, 岩井洋. 高濃度n+-Si 及びp+-Si基板上のNiシリサイドの熱安定性の違い, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, No. 0, pp. 896, Mar. 2008.

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