@article{CTT100782443,
  author = {K. Matsuura and J. Shimizu and M. Toyama and T. Ohashi and I. Muneta and S. Ishihara and K. Kakushima and K. Tsutsui and A. Ogura and H. Wakabayashi},
  title = {Sputter-Deposited-MoS2 nMISFETs with Top-Gate and Al2O3 Passivation under Low Thermal Budget for Large Area Integration},
  journal = {IEEE Journal of the Electron Devices Society},
  year = 2018,
}

@article{CTT100780935,
  author = {Y. Hibino and S. Ishihara and N. Sawamoto and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudoh and H. Wakabayashi and A. Ogura},
  title = {Investigation on Mo1-xWxS2 Fabricated by Co-Sputtering and Post-Deposition Sulfurization with (t-C4H9)2S2},
  journal = {JPN J APPL PHYS},
  year = 2018,
}

@article{CTT100780936,
  author = {K. Matsuura and T. Ohashi and I. Muneta and S. Ishihara and K. Kakushima and K. Tsutsui and A. Ogura and H. Wakabayashi},
  title = {Low-Carrier-Density Sputter-MoS2 Film by Vapor-Phase Sulfurization},
  journal = {Journal of Electrical Materials},
  year = 2018,
}

@article{CTT100765848,
  author = {Y. Hibino and S. Ishihara and N. Sawamoto and T. Ohashi and K. Matsuura and H. Machida and H. Wakabayashi and A. Ogura},
  title = {Band gap-tuned MoS2(1-x)Te2x thin films synthesized by a hybrid Co-sputtering and post-deposition tellurization annealing process},
  journal = {Journal of Materials Research},
  year = 2017,
}

@article{CTT100765852,
  author = {S. Ishihara and Y. Hibino and N. Sawamoto and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudo and H. Wakabayashi and A. Ogura},
  title = {Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor},
  journal = {MRS Advances},
  year = 2017,
}

@article{CTT100765851,
  author = {Y. Hibino and S. Ishihara and N. Sawamoto and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudo and H. Wakabayashi and A. Ogura},
  title = {Investigation on MoS2(1-x)Te2x Mixture Alloy Fabricated by Co-sputtering Deposition},
  journal = {MRS Advances},
  year = 2017,
}

@article{CTT100765855,
  author = {Y. Hibino and N. Sawamoto and K. Suda and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudoh and H. Wakabayashi and A. Ogura},
  title = {Improving crystalline quality of sputtering-deposited MoS2 thin film by postdeposition sulfurization annealing using (t-C4H9)2S2},
  journal = {Japan Journal of Applied Physics},
  year = 2016,
}

@article{CTT100765853,
  author = {S. Ishihara and Y. Hibino and N. Sawamoto and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Wakabayashi and A. Ogura},
  title = {Large Scale Uniformity of Sputtering Deposited Single- and Few-Layer MoS2 Investigated by XPS Multipoint Measurements and Histogram Analysis of Optical Contrast},
  journal = {ECS J. Solid State Sci. Technol.},
  year = 2016,
}

@article{CTT100765854,
  author = {S. Ishihara and Y. Hibino and N. Sawamoto and K. Suda and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudoh and H. Wakabayashi and A. Ogura},
  title = {Properties of single-layer MoS2 film fabricated by combination of sputtering deposition and post deposition sulfurization annealing using (t-C4H9)2S2},
  journal = {Japan Journal of Applied Physics},
  year = 2016,
}

@inproceedings{CTT100848912,
  author = {門 龍翔 and 横川 凌 and 沼沢 陽一郎 and 筒井 一生 and 角嶋 邦之 and 小椋 厚志},
  title = {Si-IGBT作製プロセスにおける水素熱処理の影響},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100816749,
  author = {松浦 賢太朗 and 濱田 昌也 and 坂本 拓朗 and 谷川 晴紀 and 宗田 伊理也 and 石原 聖也 and 角嶋 邦之 and 筒井 一生 and 小椋 厚志 and 若林 整},
  title = {F.G.アニールによるMoSi2/スパッタMoS2界面コンタクト抵抗低減},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100780958,
  author = {S. Ishihara and Y. Hibino and N. Sawamoto and T. Ohashi and K. Matsuura and H. Wakabayashi and A. Ogura},
  title = {Centimeter-scale high-performance few-layer MoS2 fabricated by RF magnetron sputtering and subsequent post-deposition annealing},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816744,
  author = {松浦 賢太朗 and 清水 淳一 and 外山 真矢人 and 大橋 匠 and 宗田 伊理也 and 石原 聖也 and 角嶋 邦之 and 筒井 一生 and 小椋 厚志 and 若林 整},
  title = {大面積集積化に向けたスパッタMoS2薄膜を用いたTop-Gate nMISFETs},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100780955,
  author = {S. Ishihara and Y. Hibino and N. Sawamoto and T. Ohashi and K. Matsuura and H. Wakabayashi and A. Ogura},
  title = {Low-temperature solid-phase crystallization of sputtering deposited quasi-layered MoS2 thin film},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100780957,
  author = {S. Ishihara and Y. Hibino and N. Sawamoto and K. Suda and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudoh and H. Wakabayashi and A. Ogura},
  title = {Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100818000,
  author = {K. Matsuura and J. Shimizu and M. Toyama and T. Ohashi and I. Muneta and S. Ishihara and K. Kakushima and K. Tsutsui and A. Ogura and H. Wakabayashi},
  title = {Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate},
  booktitle = {2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings},
  year = 2018,
}

@inproceedings{CTT100780959,
  author = {Y. Hibino and S. Ishihara and N. Sawamoto and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudoh and H. Wakabayashi and A. Ogura},
  title = {Investigation of MoS2(1-x)Te2x Mixture Alloy Fabricated by Co-sputtering Deposition},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100904004,
  author = {大橋 匠 and 坂本 拓朗 and 松浦 賢太朗 and 清水 淳一 and 外山 真矢人 and 石原 聖也 and 日比野 祐介 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 小椋 厚志 and 若林 整},
  title = {Migration制御したスパッタリング法による2次元層状MoS2成膜},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100780948,
  author = {K. Matsuura and T. Ohashi and I. Muneta and S. Ishihara and N. Sawamoto and K. Kakushima and K. Tsutsui and A. Ogura and H. Wakabayashi},
  title = {Sulfurization in Sulfur Vapor for Sputtered-MoS2 Film},
  booktitle = {Proc. of 47th IEEE Semiconductor Interface Specialists Conference (SISC)},
  year = 2016,
}

@inproceedings{CTT100780946,
  author = {S. Ishihara and Y. Hibino and N. Sawamoto and K. Suda and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudoh and H. Wakabayashi and A. Ogura},
  title = {Fabrication of High-Quality Single- and Few-Layer MoS2 Films by Combination of Sputtering Deposition and Post-Deposition Sulfurization Annealing},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100780943,
  author = {S. Ishihara and K. Suda and Y. Hibino and N. Sawamoto and T. Ohashi and S. Yamaguchi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudoh and H. Wakabayashi and A. Ogura},
  title = {Evaluation of Sputtering Deposited 2-Dimensional MoS2 Film by Raman Spectroscopy},
  booktitle = {MRS Proceedings},
  year = 2015,
}

@inproceedings{CTT100780944,
  author = {S. Ishihara and K. Suda and Y. Hibino and N. Sawamoto and T. Ohashi and S. Yamaguchi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudoh and H. Wakabayashi and A. Ogura},
  title = {Improving Crystalline Quality of Sputtering Deposited MoS2 Thin Film by Post-Deposition Sulfurization Annealing Using (t-C4H9)2S2},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100780945,
  author = {S. Ishihara and Y. Hibino and N. Sawamoto and K. Suda and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudoh and H. Wakabayashi and A. Ogura},
  title = {Properties of Single-Layer MoS2 Film Fabricated by Combination of Sputtering Deposition and Post-Deposition Sulfurization Annealing Using (t-C4H9)2S2},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100780947,
  author = {Y. Hibino and S. Ishihara and N. Sawamoto and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudoh and H. Wakabayashi and A. Ogura},
  title = {Low Temperature Formation of Layered MoS2 by Sulfurization of E-Beam Evaporated Mo Thin Film Using (t-C4H9)2S2},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100585433,
  author = {中山寛人 and 日野雅文 and 永田晃基 and 小瀬村大亮 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 小椋厚志 and 服部健雄 and 岩井洋},
  title = {As注入とSiN応力膜によるpoly-Siへの歪記憶の検討},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100830625,
  author = {M. Hino and K. Nagata and T. Yoshida and D. Kosemura and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and A. Ogura and T. Hattori and H. Iwai},
  title = {Study on Stress Memorization by Argon Implantation and Annealing},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830635,
  author = {K. Tsutsui and M. Watanabe and Y. Nakagawa and T. Matsuda and Y. Yoshida and E. Ikenaga and K. Kakushima and P. Ahmet and H. Nohira and T. Maruizumi and A. Ogura and T. Hattori and H. Iwai},
  title = {New Analysis of Heavily Doped Boron and Arsenic in Shallow Junctions by X-Ray Photoelectron Spectroscopy},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100585114,
  author = {中山寛人 and 日野雅文 and 服部健雄 and 杉井信之 and 筒井一生 and パールハットアヘメト and 角嶋邦之 and 小椋厚志 and 永田 晃基 and 吉田 哲也 and 小瀬村大亮 and 岩井洋},
  title = {Ar注入とSiN応力膜によるパターン付Si基板への歪記憶技術の検討},
  booktitle = {応用物理学会},
  year = 2008,
}

@inproceedings{CTT100576388,
  author = {日野雅文 and 吉田哲也 and 小瀬村 大亮 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 小椋 厚志 and 服部健雄 and 岩井洋},
  title = {SiN応力膜によるSi基板への歪記憶の検討},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}