@article{CTT100830384,
  author = {"Y. Wu" and "H. Hasegawa" and "K. Kakushima" and "K. Ohmori" and "T. Watanabe" and "A. Nishiyama" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "Y. Kataoka" and "K. Natori" and "K. Yamada" and "H. Iwai"},
  title = {A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability},
  journal = {Microelectronics Reliability},
  year = 2014,
}

@article{CTT100647650,
  author = {W. Feng and R. Hettiarachchi and Soshi Sato and Kuniyuki KAKUSHIMA and M. Niwa and HIROSHI IWAI and Keisaku Yamada and Kenji Ohmori},
  title = {Advantages of Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties},
  journal = {Japanese Journal of Applied Physics},
  year = 2012,
}

@article{CTT100647572,
  author = {Soshi Sato and Kuniyuki KAKUSHIMA and Kenji Ohmori and KENJI NATORI and Keisaku Yamada and HIROSHI IWAI},
  title = {Electrical characteristics of asymmetrical silicon nanowire field-effect transistors},
  journal = {APPLIED PHYSICS LETTERS},
  year = 2011,
}

@article{CTT100647571,
  author = {Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and Kenji Ohmori and KENJI NATORI and Keisaku Yamada and HIROSHI IWAI},
  title = {Effects of corner angle of trapezoidal and triangular channel cross-sections on electrical performance of silicon nanowire field-effect transistors with semi gate-around structure},
  journal = {Solid-State Electronics},
  year = 2011,
}

@article{CTT100625147,
  author = {Soshi Sato and Wei Li and Kuniyuki KAKUSHIMA and Kenji Ohmori and KENJI NATORI and Keisaku Yamada and HIROSHI IWAI},
  title = {Eatraction of additional interfacial states of silicon nanowire field-effect transistors},
  journal = {APPLIED PHYSICS LETTERS},
  year = 2011,
}

@article{CTT100622438,
  author = {HIROSHI IWAI and KENJI NATORI and Kenji Shiraishi and 岩田 潤一 and 押山  淳 and Keisaku Yamada and Kenji Ohmori and Kuniyuki KAKUSHIMA and Ahmet Parhat},
  title = {Si nanowire FET and its modeling},
  journal = {Science China},
  year = 2011,
}

@article{CTT100621284,
  author = {Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and Kenji Ohmori and KENJI NATORI and Keisaku Yamada and HIROSHI IWAI},
  title = {Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors},
  journal = {Microelectronics Reliability},
  year = 2011,
}

@article{CTT100621278,
  author = {Soshi Sato and Kenji Ohmori and Kuniyuki KAKUSHIMA and Ahmet Parhat and KENJI NATORI and Keisaku Yamada and HIROSHI IWAI},
  title = {Experimental Characterization of Quasi-Fermi Pontential Profile in the Channel of a Silicon Nanowire Field-Effect Transistor with Four-Terminal Geometry},
  journal = {Applied Physics Express},
  year = 2011,
}

@inproceedings{CTT100623967,
  author = {Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and Kenji Ohmori and KENJI NATORI and Keisaku Yamada and HIROSHI IWAI},
  title = {Structural Effects of Channel Cross-section on a Gate Capacitance of Silicon Nanowire Field-Effect Transistors},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100623966,
  author = {W. Feng and R. Hettiarachchi and Soshi Sato and Kuniyuki KAKUSHIMA and M. Niwa and HIROSHI IWAI and Keisaku Yamada and Kenji Ohmori},
  title = {Advantages of Silicon Nanowire MOSFETs over Planar Ones Investigated from the Viewpoints of Static and Noise Properties},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100624047,
  author = {Kenji Ohmori and W. Feng and Soshi Sato and R. Hettiarachchi and M. Sato and T. Matsuki and Kuniyuki KAKUSHIMA and HIROSHI IWAI and Keisaku Yamada},
  title = {Direct Real-Time Observation of Channel Potential Fluctuation, Correlated to Random Telegraph Noise of Drain Current Using Nanowire MOSFETs with Four-Probe Terminals},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628846,
  author = {大毛利健二 and フェン ウェイ and 佐藤創志 and ヘッティアーラッチ・ランガ and 佐藤 基之 and 松木 武雄 and 角嶋邦之 and 岩井洋 and 山田啓作},
  title = {ドレイン電流のランダムテレグラフノイズに相関したFETチャネルポテンシャル揺らぎの実時間直接観測},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628839,
  author = {フェン ウェイ and ヘッティアーラッチ・ランガ and 佐藤創志 and 角嶋邦之 and M.Niwa and 岩井洋 and 山田啓作 and 大毛利健二},
  title = {Advantages of Silicon Nanowire MOSFETs over Planar MOSFETs Investigated from the Aspect of Drain-Current Noise},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622609,
  author = {Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and Kenji Ohmori and KENJI NATORI and Keisaku Yamada and HIROSHI IWAI},
  title = {Influence of the cross-sectional shape for Si nanowire FETs},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100617607,
  author = {T. Nakayama and Kuniyuki KAKUSHIMA and O. Nakatsuka and Y. Machida and S. Sotome and T. Matsuki and Kenji Ohmori and HIROSHI IWAI and S. Zaima and 知京豊裕 and Kenji Shiraishi and Keisaku Yamada},
  title = {Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-Devices based on Fundamental Physics of Why Silicides Exist in Nature},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613533,
  author = {Soshi Sato and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and Kenji Ohmori and KENJI NATORI and Keisaku Yamada and HIROSHI IWAI},
  title = {Gate Semi-Around Si Nanowire FET Fabricated by Conventional CMOS Process with Very High Drivability},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100608715,
  author = {佐藤創志 and 角嶋邦之 and パールハットアヘメト and 大毛利健二 and 名取研二 and 岩井洋 and 山田啓作},
  title = {キャリア移動度評価によるシリコンナノワイヤトランジスタの電気特性解析},
  booktitle = {電子情報通信学会技術研究報告 pp.11-16},
  year = 2010,
}

@inproceedings{CTT100630955,
  author = {佐藤創志 and 角嶋邦之 and パールハットアヘメト and 大毛利健治 and 山田啓作 and 名取研二 and 岩井洋},
  title = {Influence of the cross-sectional shape for Si nanowire FETs},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100597754,
  author = {Soshi Sato and Hideyuki Kamimura and Hideaki Arai and Kuniyuki KAKUSHIMA and Ahmet Parhat and Kenji Ohmori and Keisaku Yamada and HIROSHI IWAI},
  title = {High-Performance Si Nanowire FET with a Semi Gate-Around Structure Suitable for Integration},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585423,
  author = {佐藤創志 and 上村英之 and 新井英朗 and 角嶋邦之 and パールハットアヘメト and 大毛利健二 and 筒井一生 and 杉井信之 and 服部健雄 and 山田啓作 and 岩井洋},
  title = {四端子測定TEGを用いたSiナノワイヤトランジスタのチャネル内電位の測定},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585302,
  author = {岩井洋 and 名取研二 and 白石賢二 and 山田啓作 and 大毛利健二 and 筒井一生 and 角嶋邦之 and パールハットアヘメト},
  title = {シリコンナノワイヤFET研究の現状とロードマップ作成の考え方},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585291,
  author = {岩井洋 and 山田啓作 and 大毛利健二 and 筒井一生 and 角嶋邦之 and パールハットアヘメト and 佐藤創志 and 上村英之 and 新井英朗},
  title = {トップダウンSiナノワイヤFETの作製法とその電気的特性のサーベイ},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585100,
  author = {佐藤創志 and 上村英之 and 新井英朗 and 大毛利健二 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 服部健雄 and 杉井信之 and 山田啓作 and 岩井洋},
  title = {Si Finのアスペクト比最適化により作製した円形Siナノワイヤの形状に関する研究},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100607958,
  author = {Naoto Umezawa and Kenji Shiraishi and Kuniyuki KAKUSHIMA and Kenji Ohmori and Keisaku Yamada and 知京豊裕 and HIROSHI IWAI},
  title = {Relation between solubility of silicon in high-k oxides and the effect of Fermi level pinning},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100576391,
  author = {上村英之 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 大毛利 健二 and 服部健雄 and 岩井洋},
  title = {熱酸化によるSiナノワイヤ形状の酸化条件依存性},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}