@article{CTT100658744,
  author = {Miranda Enrique and Takamasa Kawanago and Kuniyuki KAKUSHIMA and J.Sune and HIROSHI IWAI},
  title = {Modeling of the output characteristics of advanced n-MOSFETs after a severe gate-to-channel dielectric breakdown},
  journal = {[Microelectronic Engineering},
  year = 2013,
}

@article{CTT100658807,
  author = {Miranda Enrique and Takamasa Kawanago and Kuniyuki KAKUSHIMA and J. Sune and HIROSHI IWAI},
  title = {Analysis and Simulation of the Postbreakdown I-V Characteristics of n-MOS Transistors in the Linear Response Regime},
  journal = {IEEE ELECTRON DEVICE LETTERS},
  year = 2013,
}

@article{CTT100658725,
  author = {Miranda Enrique and shinichi kano and 竇春萌 and J. Sune and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Effect of an ultrathin SiO2 interfacial layer on the hysteretic current-voltage characteristics of CeOx-based metal-insulator-metal structures},
  journal = {Thin Solid Films},
  year = 2013,
}

@article{CTT100647716,
  author = {Miranda Enrique and Takamasa Kawanago and Kuniyuki KAKUSHIMA and J. Sune and HIROSHI IWAI},
  title = {Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown},
  journal = {Microelectronics Reliability},
  year = 2012,
}

@article{CTT100647717,
  author = {Miranda Enrique and shinichi kano and C. Dou and Kuniyuki KAKUSHIMA and J. Sune and HIROSHI IWAI},
  title = {Nonlinear conductance quantization effects in CeO/SiO-based resistive switching devices},
  journal = {APPLIED PHYSICS LETTERS},
  year = 2012,
}

@article{CTT100576512,
  author = {Miranda Enrique and Molina Reyes Joel and Y Kim and HIROSHI IWAI},
  title = {Tunneling in sub-5nm La2O3 Deposited by E-beam Evaporation},
  journal = {Journal of Non-Crystalline Solids},
  year = 2006,
}

@article{CTT100576511,
  author = {Miranda Enrique and HIROSHI IWAI and Molina Reyes Joel and Y Kim},
  title = {Degradation of High-K La2O3 Gate Dielectrics Using Progressive Electrical Stress},
  journal = {Microelectronics  Reliability},
  year = 2005,
}

@inproceedings{CTT100658713,
  author = {Miranda Enrique and Takamasa Kawanago and Kuniyuki KAKUSHIMA and J. Sune and HIROSHI IWAI},
  title = {Modeling of the Output Characteristics of Advanced N-MOSFETs After a Severe Gate-to-Channel Dielectric Breakdown},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100657453,
  author = {shinichi kano and 竇春萌 and unknown unknown and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and 片岡好則 and Kenji Natori and Miranda Enrique and takeo hattori and HIROSHI IWAI},
  title = {Influence electrode materials on CeOx based resistive switching},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100830553,
  author = {S. Kano and C. Dou and M. Hadi and K. Kakushima and P. Ahmet and A. Nishiyama and N. Sugii and K. Tsutsui and Y. Kataoka and K. Natori and E. Miranda and T. Hattori and H. Iwai},
  title = {Influence of Electrode Material for CaOx Based Resistive Switching},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657538,
  author = {Miranda Enrique and shinichi kano and 竇春萌 and J. Sune and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {New experimental evidences of conductance quantization in electroformed oxide stacks},
  booktitle = {},
  year = 2012,
}