論文

• Joel Molina-Reyes, Takuya Hoshii, Shun-Ichiro Ohmi, Hiroshi Funakubo, Atsushi Hori, Ichiro Fujiwara, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films, Jpn. J. Appl. Phys., Vol. 59, pp. SGGB06-1-6, Feb. 2020.
• Joel Molina-Reyes, Takuya Hoshii, Shun-Ichiro Ohmi, Hiroshi Funakubo, Atsushi Hori, Ichiro Fujiwara, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films, Japanese Journal of Applied Physics, Vol. 59, No. SG, Feb. 2020.
• Reyes Joel Molina, A. Torres, W. Calleja, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Degradation and breakdown of W-La2O3 stack after annealing in N-2, JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 47, pp. 7076-7080, 2008.
• Miranda Enrique, Molina Reyes Joel, Y Kim, HIROSHI IWAI. Tunneling in sub-5nm La2O3 Deposited by E-beam Evaporation, Journal of Non-Crystalline Solids, Science Direct, Vol. 352, pp. 92-97, Jan. 2006.
• Miranda Enrique, HIROSHI IWAI, Molina Reyes Joel, Y Kim. Degradation of High-K La2O3 Gate Dielectrics Using Progressive Electrical Stress, Microelectronics Reliability, Science Direct, No. 45, pp. 1365-1369,, May 2005.

国際会議発表 (査読有り)

• Joel Molina-Reyes, Takuya Hoshii, Shun-Ichiro Ohmi, Hiroshi Funakubo, Atsushi Hori, Ichiro Fujiwara, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. Endurance Improvement in Ferroelectric Y-doped HfO2 Thin Films on NiSi2 with Low-Thermal Budget Processing, Solid State Devices and Materials (SSDM2019), Sept. 2019.
• J. Molina, K. Tachi, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, I. Hiroshi. Charge Trapping Characteristics of W-La2O3-nSi Mis Capacitors After Post-Metallization Annealing PMA in N2, 2006 Joint International Meeting of ECS, Oct. 2006.

国際会議発表 (査読なし・不明)

• J. Molina, T. Mimura, Y. Nakamura, T. Shimizu, H. Funakubo, I. Fujiwara, T. Hoshii, S. Ohmi, A. Hori, H. Wakabayashi, K. Tsutsui, K. Kakushima. Interface engineering of BEOL compatible ferroelectric Y:HfO2 device for enhanced endurance, 2020 IMW (The 12th International Memory Workshop), May 2020.
• Joel Molina-Reyes, Haruki Iwatsuka, Takuya Hoshii, Shun-Ichiro Ohmi, Hiroshi Funakubo, Atsushi Hori, Ichiro Fujiwara, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. NiSi2 as a Promotor of Ferroelectricity in Si-doped HfO2 Thin Films after Low-Thermal Budget Processing, VLSI 2019 (2019 Symposia on VLSI Technology and Circuits), June 2019.
• J. Molina, H. Iwatsuka, T. Hoshii, S. Ohmi, H. Funakubo, A. Hori, I. Fujiwara, H. Wakabayashi, K. Tsutsui, K. Kakushima. Ferroelectric Properties of Si doped HfO2 Thin Films with NiSi2 as Bottom Electrode, 235th ECS Meeting, May 2019.

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