@book{CTT100589431,
  author = {Hei Wong and Kenji Shiraishi and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {High-K Gate Dielectrics},
  publisher = {Pan Stanford Publishing Pte. Ltd.},
  year = 2009,
}

@article{CTT100874327,
  author = {Kenta Chokawa and Yoshiaki Daigo and Ichiro Mizushima and Takashi Yoda and Kenji Shiraishi},
  title = {First-principles and thermodynamic analysis for gas phase reactions and structures of the SiC(0001) surface under conventional CVD and Halide CVD environments},
  journal = {Japanese Journal of Applied Physics},
  year = 2021,
}

@article{CTT100622438,
  author = {HIROSHI IWAI and KENJI NATORI and Kenji Shiraishi and 岩田 潤一 and 押山  淳 and Keisaku Yamada and Kenji Ohmori and Kuniyuki KAKUSHIMA and Ahmet Parhat},
  title = {Si nanowire FET and its modeling},
  journal = {Science China},
  year = 2011,
}

@article{CTT100607473,
  author = {Yeonghun Lee and KENJI NATORI and HIROSHI IWAI and Kuniyuki KAKUSHIMA and Kenji Shiraishi},
  title = {Size-Dependent Properties of Ballistic Silicon Nanowire Field Effect Transistors},
  journal = {Journal of Applied Physics},
  year = 2010,
}

@article{CTT100608503,
  author = {Yeonghun Lee and Kuniyuki KAKUSHIMA and Kenji Shiraishi and KENJI NATORI and HIROSHI IWAI},
  title = {Trade-off between density of states and gate capacitance in size-dependent injection velocity of ballistic n-channel silicon nanowire transistors},
  journal = {Applied Physics Letters97, 1},
  year = 2010,
}

@article{CTT100613522,
  author = {Yeonghun Lee and Kuniyuki KAKUSHIMA and Kenji Shiraishi and KENJI NATORI and HIROSHI IWAI},
  title = {Trade-off between density of states and gate capacitance in size-dependent injection velocity of ballistic n-channel silicon nanowire transistors},
  journal = {Applied Physics Letters97, 1, ????,2010},
  year = 2010,
}

@article{CTT100586849,
  author = {Kentaro Doi and Yutaka Mikazuki and Shinya Sugino and Tatsuki Doi and Pawel Szarek and Masato Senami and Kenji Shiraishi and HIROSHI IWAI and Naoto Umezawa and 知京豊裕 and Keisaku Yamada and Akitomo Tachibana},
  title = {Electronic structure study of local dielectric properties of lanthanoid oxide, clusters},
  journal = {JAPANESE JOURNAL OF APPLIED PHYSICS},
  year = 2008,
}

@inproceedings{CTT100880831,
  author = {富澤 巧 and 川上 賢人 and 櫻井 照夫 and 草場 彰 and 岡本 直也 and 芳松 克則 and 醍醐 佳明 and 水島 一郎 and 依田 孝 and 寒川 義裕 and 柿本 浩一 and 白石 賢二},
  title = {縦型結晶成長装置におけるGaN MOVPEシミュレーション},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100654913,
  author = {W. Feng and R. Hettiarachchi and Yeonghun Lee and Soshi Sato and Kuniyuki KAKUSHIMA and M. Sato and K. Fukuda and M. Niwa and K. Yamabe and Kenji Shiraishi and HIROSHI IWAI},
  title = {Fundamental origin of excellent low-noise property in 3D Si-MOSFETs ~Impact of charge-centroid in the channel due to quantum effect on 1/f noise ~},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100657534,
  author = {大毛利健治 and W. Feng and R. Hettiarachchi and Yeonghun Lee and Soshi Sato and Kuniyuki KAKUSHIMA and M. Sato and K. Fukuda and M. Niwa and K. Yamabe and Kenji Shiraishi and HIROSHI IWAI and Keisaku Yamada},
  title = {Low-frequency noise reduction in Si Nanowire MOSFETs},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657559,
  author = {櫻井蓉子 and 大毛利健治 and Keisaku Yamada and Kuniyuki KAKUSHIMA and T. Tayagaki and HIROSHI IWAI and Y. Kanemitsu and K. Asakawa and Kenji Shiraishi and S. Nomura},
  title = {Photoluminescence Properties of Si Nanolayers and Si Nanowires},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657536,
  author = {大毛利健治 and W. Feng and R. Hettiarachchi and Yeonghun Lee and Soshi Sato and Kuniyuki KAKUSHIMA and M. Sato and K. Fukuda and M. Niwa and K. Yamabe and Kenji Shiraishi and HIROSHI IWAI and Keisaku Yamada},
  title = {Low-frequency noise reduction in Si Nanowire MOSFETs},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657535,
  author = {大毛利健治 and W. Feng and R. Hettiarachchi and Yeonghun Lee and Soshi Sato and Kuniyuki KAKUSHIMA and M. Sato and K. Fukuda and M. Niwa and K. Yamabe and Kenji Shiraishi and HIROSHI IWAI and Keisaku Yamada},
  title = {Low-frequency noise reduction in Si Nanowire MOSFETs},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100654676,
  author = {櫻井 蓉子 and 大毛利健治 and Keisaku Yamada and Kenji Shiraishi and Kuniyuki KAKUSHIMA and HIROSHI IWAI and S. Nomura},
  title = {Photoluminescence Characterization of the Interface Properties of Si Nanolayers and Nanowires},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100617607,
  author = {T. Nakayama and Kuniyuki KAKUSHIMA and O. Nakatsuka and Y. Machida and S. Sotome and T. Matsuki and Kenji Ohmori and HIROSHI IWAI and S. Zaima and 知京豊裕 and Kenji Shiraishi and Keisaku Yamada},
  title = {Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-Devices based on Fundamental Physics of Why Silicides Exist in Nature},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616065,
  author = {李映勲 and 角嶋邦之 and 白石賢二 and 名取研二 and 岩井洋},
  title = {バリスティックナノワイヤトランジスタ性能の太さ依存における状態密度と静電容量のトレードオフ},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100603771,
  author = {李映勲 and 角嶋邦之 and 白石賢二 and 名取研二 and 岩井洋},
  title = {バリスティックSiナノワイヤトランジスタの電気特性の直径依存性},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100597922,
  author = {Miyuki Kouda and Naoto Umezawa and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Ahmet Parhat and Kenji Shiraishi and 知京豊裕 and Keisaku Yamada and HIROSHI IWAI},
  title = {Charged defects reduction in gate insulator with multivalent materials},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597923,
  author = {Yeonghun Lee and Kuniyuki KAKUSHIMA and Kenji Shiraishi and KENJI NATORI and HIROSHI IWAI},
  title = {Size-Dependent Transport Characteristics of Ballistic Silicon Nanowire FETs},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597860,
  author = {Yeonghun Lee and Kuniyuki KAKUSHIMA and Kenji Shiraishi and KENJI NATORI and HIROSHI IWAI},
  title = {Systematic Study on Size Dependences of Transport Parameters for Ballistic Nanowire-FET with Effective Mass Approximation},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585083,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and Naoto Umezawa and Ahmet Parhat and Kenji Shiraishi and Toyohiro Chikyow and Keisaku Yamada and HIROSHI IWAI},
  title = {Charged defects reduction in gate insulator with multivalent materials},
  booktitle = {2009 Symposium on VLSI Technology Digest of Technical Papers},
  year = 2009,
}

@inproceedings{CTT100585317,
  author = {李映勲 and 永田貴弘 and 角嶋邦之 and 白石賢二 and 名取研二 and 岩井洋},
  title = {引っ張り歪みSiナノワイヤの電子構造とバリスティック伝導},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585302,
  author = {岩井洋 and 名取研二 and 白石賢二 and 山田啓作 and 大毛利健二 and 筒井一生 and 角嶋邦之 and パールハットアヘメト},
  title = {シリコンナノワイヤFET研究の現状とロードマップ作成の考え方},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585128,
  author = {幸田みゆき and 梅澤直人 and 角嶋邦之 and パールハットアヘメト and 白石賢二 and 知京豊裕 and 山田啓作 and 岩井洋 and 服部健雄},
  title = {低電子揺動Ce酸化物を利用したhigh－k膜中の固定電荷の抑制},
  booktitle = {ゲートスタック研究会－材料･プロセス・評価の物理－（第14回研究会）},
  year = 2009,
}

@inproceedings{CTT100576515,
  author = {李映勲 and 永田 貴弘 and 白石 賢二 and 角嶋邦之 and 岩井洋},
  title = {第一原理計算によるシリコンナノワイヤの電子構造解析},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100607958,
  author = {Naoto Umezawa and Kenji Shiraishi and Kuniyuki KAKUSHIMA and Kenji Ohmori and Keisaku Yamada and 知京豊裕 and HIROSHI IWAI},
  title = {Relation between solubility of silicon in high-k oxides and the effect of Fermi level pinning},
  booktitle = {},
  year = 2008,
}