論文

• Kazuo Tsutsui, Tomohiro Matsushita, Kotaro Natori, Takayuki Muro, Yoshitada Morikawa, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, Toyohiko Kinoshita. Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography, Nano Letters, Vol. 17, pp. 7533-7538, Nov. 2017.
• K. Ozawa, T. Kakubo, K. Shimizu, N. Amino, K. Mase, Y. Izumi, T. Muro, T. Komatsu. High-Resolution Photoelectron Spectroscopy Study of Degradation of Rubber-to-Brass Adhesion by Thermal Aging, Applied Surface Science, Elsevier B.V., Vol. 268, pp. 117-123, Jan. 2013.

国際会議発表 (査読有り)

• Kazuo Tsutsui, Tomohiro Matsushita, Takayuki Muro, Yoshitada Morikawa, Kotaro Natori, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, Toyohiko Kinoshita. 3D Atomic Imaging of As Doped in Si by Spectro-Photoelectron Holography, 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8), Nov. 2019.
• T. Kinoshita, T. Matsushita, T. Muro, T. Ohkochi, H. Osawa, K. Hayashi, F. Matsui, K.Tsutsui, K. Natori, Y. Morikawa, T. Hoshii, K. Kakushima, H. Wakabayashi, A. Takeda, K. Terashima, W. Hosoda, T. Fukura, Y. Yano, H. Fujiwara, M. Sunagawa, H. Kato, T. Oguchi, T. Wakita, Y. Muraoka, T. Yokoya. Status of Photoelectron Holography at SPring-8: Experimental Setup for Time- and Space-Resolved Technique and Application to Individual Atomic Imaging of Multiple Dopant Sites, T. Kinoshita, T. Matsushita, T. Muro, T. Ohkochi, H. Osawa, K. Hayashi, F. Matsui, K.Tsutsui, K. Natori, Y. Morikawa, T. Hoshii, K. Kakushima, H. Wakabayashi, A. Takeda, K. Terashima, W. Hosoda, T. Fukura, Y. Yano, H. Fujiwara, M. Sunagawa, H. Kato, T. Oguchi, T. Wakita, Y. Muraoka and T. Yokoya, Nov. 2019.
• Tomohiro Matsushita, Takayuki Muro, Kazuo Tsutsui, Takayoshi Yokoya. Three-dimensional dopant imaging in semiconductor crystals using photoelectron holography with chemical state identification, Int. Workshop on Juction Technology (IWJT2019), June 2019.
• Toyohiko Kinoshita, Tomohiro Matsushita, Takayuki Muro, Takuo Ohkochi, Hitoshi Osawa, Kouichi Hayashi, Fumihiko Matsui, Kazuo Tsutsui, Kotaro Natori, Yoshitada Morikawa, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Aya Taked, Kensei Terashim, Wataru Hosoda, Tetsuji Fukura, Yuukou Yano, Hirohkazu Fujiwara, Masanori Sunagawa, Hiromitsu Kato, Tamio Oguchi, Takanori Wakita, Yuuji Muraoka, Takayoshi Yokoya. Status of photoelectron holography at SPring-8:Experimental setup for time- and space-resolved technique and application to individual atomic imaging of multiple dopant sites, 14th Int. Conf. on Electron Spectroscopy and Structure (ICEESS-14), Oct. 2018.
• Kotaro Natori, Tatsuhiro Ogawa, Takuya Hoshii, Tomohiro Matsushia, Takayuki Muro, Toyohiko Kinoshita, Yoshitada Morikawa, Kuniyuki Kakushima, Fumihiko Matsui, Kouichi Hayashi, Hitoshi Wakabayashi, Kazuo Tsutsui. Atomic scale analyses of As doped in Si by soft X-ray photoelectron spectroscopy and spectro-photoelectron holography, 11th Int. Symp. on Atomic Level Characterization (ALC'17), Dec. 2017.
• Youhei Miyata, Jun Kanehara, Hiroshi Nohira, Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita, Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Takeo Hattori1, Hiroshi Iwai. Analysis of Chemical Bonding States of Boron Doped in Si Fin Structures: Selective Observation on Top Surfaces and Sidewalls, 12th Int. Workshop on Junction Technology (IWJT2012), May 2012.
• Jun Kanehara, Youhei Miyata, Hiroshi Nohira, Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita, Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai. Chemical Bonding States of As in Si Shallow Junctions Detected by Soft X-ray Photoelectron Spectroscopy and their Profiles, 2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011), Sept. 2011.
• Youhei Miyata, Jun Kanehara, Hiroshi Nohira, Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita, Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai. Soft X-ray Photoelectron Spectroscopy on Chemical Bonding States of Boron Doped in Si Fin Structures, 2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011), Sept. 2011.

国際会議発表 (査読なし・不明)

• K. Tsutsui, K. Natori, T. Ogawa, T. Muro, T. Matsuishita, Y. Morikawa, T. Hoshii, K. Kakushima, H. Wakabayashi, K. Hayashi, F. Matsui, T. Kinoshita. Analyses of 3D Atomic Arrangements of Dopants in Si Crystal Using Spectro-photoelectron Holography, Material Resarch Meeing 2019 (MRM2019), Dec. 2019.
• Tomohiro Matsushita, Takayuki Muro, Toyohiko Kinoshita, Fumihiko Matsui, Hiroshi Daimon, Naohisa Happo, Sinya Hosokokawa, Kenji Ohoyama, Kazuo Tsutsui, Takayoshi Yokoya, Kouichi Hayashi. Three-dimensional atomic imaging of dopants using atomic resolution holography, 14th Int. Conf. on Electron Spectroscopy and Structure (ICEESS-14), Oct. 2018.
• Kazuo Tsutsui, Tomohiro Matsushita, Takayuki Muro, Yoshitada Morikawa, Kotaro Natori, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, Toyohiko Kinoshita. Atomic Sites of Dopants in Si Visualized by Spectro-Photoelectron Holography, International Conference on Solid-State Devices and Materials (SSDM2018), Sept. 2018.
• Kazuo Tsutsui, Tomohiro Matsushita, Takayuki Muro, Yoshitada Morikawa, Kotaro Natori, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, Toyohiko Kinoshita. Analyses of 3D Atomic Arrangements of Impurity Atoms Doped in Silicon by Spectro-Photoelectron Holography Technique, Intnational Workshop on Junction Technology (IWJT2018), Mar. 2018.
• Kouhei Akita, Jun Kanehara, Hiroshi Nohira, Y. Izumi, TAKAYUKI MURO, 木下豊彦, パールハットアヘメト, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, takeo hattori, HIROSHI IWAI. [517] Y. Miyata, K. Akita, J. Kanehara, H. Nohira, Y. Izumi, T. Muro, T. Kinoshita, P. Analysis of Boron Doped in Si Fin Structure by Soft X-ray Photoelectron Spectroscopy, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Jun Kanehara, Yusuke Takei, Youhei Miyata, Hiroshi Nohira, Y. Izumi, TAKAYUKI MURO, 木下豊彦, パールハットアヘメト, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, takeo hattori, HIROSHI IWAI. Depth Profiling of As with Various Chemical Bonding States Doped in Si Shallow Junction by Using Soft X-ray Photoelectron Spectroscopy, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.

国内会議発表 (査読なし・不明)

• 筒井 一生, 松橋 泰平, 星井 拓也, 角嶋 邦之, 若林 整, 永山 勉, 樋口 隆弘, 加藤 慎一, 谷村 英昭, 室 隆桂之, 松下 智裕, 森川 良忠. AsおよびBの共ドープによるSi中Asクラスターの特性制御, 第81回応用物理学会秋季学術講演会, Sept. 2020.
• 田中正興, 金原潤, 宮田陽平, 角嶋邦之, パールハットアヘメト, 室隆桂之, 木下豊彦, 野平博司, 筒井一生, 室田 淳一, 服部健雄, 岩井洋. Siエピタキシャル層にドープされたボロンの軟X線光電子分光, 第７１回応用物理学会学術講演会, Sept. 2010.
• 星野憲文, 中川恭成, 野平博司, 室 隆桂之, 加藤 有香子, 甲斐隆行, 金成国, パールハットアヘメト, 角嶋邦之, 水野文二, 木下 豊彦, 筒井一生, 服部健雄, 岩井洋. 光電子分光によるSi中Asの化学結合状態評価, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 883, Mar. 2009.

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