@article{CTT100647720,
  author = {H Wong and B.L. Yang and S. Dong and HIROSHI IWAI and Kuniyuki KAKUSHIMA and Ahmet Parhat},
  title = {Current conduction and stability of CeO2/La2O3 stacked gate dielectric},
  journal = {APPLIED PHYSICS LETTERS},
  year = 2012,
}

@article{CTT100647712,
  author = {B.L. Yang and H Wong and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Improving the electrical characteristics of MOS transistors with CeO2/ La2O3 stacked gate dielectric},
  journal = {Microelectronics Realiability},
  year = 2012,
}

@article{CTT100647714,
  author = {S.-L. Siu and W.-S. Tam and H Wong and C.-W. Kok and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Influence of multi-finger layout on the subthreshold behavior of nanometer MOS transistors},
  journal = {Microelectronics Realiability},
  year = 2012,
}

@article{CTT100647576,
  author = {H Wong and B.L. Yang and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI},
  title = {Properties of CeOx/La2O3 gate dielectric and its effects on the MOS transistor characteristics},
  journal = {Vacuum},
  year = 2012,
}

@article{CTT100647577,
  author = {H Wong and B.L. Yang and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI},
  title = {Effects of aluminum doping on lanthanum oxide gate dielectric films},
  journal = {Vacuum},
  year = 2012,
}

@article{CTT100586778,
  author = {B Sen and H Wong and B.L. Yang and P.K. Chu and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Effects of nitrogen incorporation into lanthana film by plasma immersion ion implantation},
  journal = {Solid-State Electronics},
  year = 2009,
}