論文

• KAZUO TSUTSUI, T Matsuda, M Watanabe, Cheng-Guo Jin, 佐々木雄一朗, Bunji Mizuno, E Ikenaga, Kuniyuki KAKUSHIMA, Ahmet Parhat, T Maruizumi, Hiroshi Nohira, takeo hattori, HIROSHI IWAI. Activated Boron and its Concentration Profiles in Heavily Doped Si Studied by Soft X-ray Photoelectron Spectroscopy and Hall Measurements, Journal of Applied Physics, Vol. 104, 093709, 2008.

国際会議発表 (査読有り)

• B. Mizuno, Y. Sasaki, C. G. Jin, K. Okashita, K. Nakamoto, T. Kitaoka, K. Tsutsui, H. A. Sauddin, H. Iwai. Production-worthy approach of Plasma Doping (PD), The 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008), Oct. 2008.
• Kazuo Tsutsui, Masamitsu Watanabe, Yasumasa Nakagawa, Kazunori Sakai, Takayuki Kai, Cheng-Guo Jin, Yuichiro Sasaki, Kuniyuki Kakushima, Parhat Ahmet, Bunji Mizuno, Takeo Hattori, Hiroshi Iwai.. Profiling of Carrier Properties for Shallow Junctions Using a New Sub-nanometer Step-by-step Etching Technique, The 8th International Workshop on Junction Technology (IWJT2008), May 2008.
• Y. Sasaki, H. Ito, K. Okashita, H. Tamura, C. G. Jin, B. Mizuno, T. Okumura, I. Aiba, Y. Fukagawa, H. Sauddin, K. Tsutsui, H. Iwai. Production-worthy USJ formation by self-regulatory plasma doping method, IIT2006, 2006.

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