@article{CTT100647654,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs},
  journal = {Solid-State Electronics},
  year = 2012,
}

@article{CTT100647652,
  author = {マイマイティ マイマイティレャアティ and 久保田透 and 関拓也 and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 片岡好則 and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Oxide and interface trap densities estimation in ultrathin W/ La2O3/Si MOS capacitors},
  journal = {Microelectronics Reliability},
  year = 2012,
}

@article{CTT100647649,
  author = {C. Dou and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer},
  journal = {Microelectronics Reliability},
  year = 2012,
}

@article{CTT100647591,
  author = {マイマイティ マイマイティレャアティ and Miyuki Kouda and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Ahmet Parhat and 片岡好則 and 西山彰 and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Valance number transition and silicate formation of cerrium oxide on Si(100)},
  journal = {Vacuum},
  year = 2012,
}

@article{CTT100647588,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Covalent Nature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal2},
  journal = {IEEE ELECTRON DEVICE LETTERS},
  year = 2012,
}

@article{CTT100647590,
  author = {マイマイティ マイマイティレャアティ and Miyuki Kouda and Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 片岡 好則 and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {The effect of remote Coulomb scattering on electron mobility in La2O3 gate stacked MOSFETs},
  journal = {Semiconductor Science and Technology},
  year = 2012,
}

@article{CTT100647573,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature},
  journal = {IEEE Transactions on Electron Devices},
  year = 2012,
}

@article{CTT100647574,
  author = {Takamasa Kawanago and 鈴木 拓也 and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process},
  journal = {Solid-State Electronics},
  year = 2012,
}

@article{CTT100647417,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Rare Earth Oxide Capping Effect on La2O3 Gate Dielectrics for Equivalent Oxide Thickness Scaling toward 0.5nm},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100647422,
  author = {来山大祐 and 久保田透 and Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {[ 183]	D. Kitayama, T. Kubota, T. Koyonagi, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai, “Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5nm* Adjustment of Amount of Residual Oxygen Atoms in Metal Layer”, Japanese Journal of Applied Physics, Vol.50, No.10, pp.10PA05-1-5, October, 2011},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100647421,
  author = {ダリューシュザデ and Takashi Kanda and 山下晃司 and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Capacitance-Voltage Characterization of La2O3 Metal-Oxide-Semiconductor Structures on Ino.53Ga.0.47As Substrate with Different Surface Treatment Methods},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100626839,
  author = {来山大祐 and Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Effect of thin Si insertion at metal gate/high-k interface on electrical characteristics of MOS device with La2 O3},
  journal = {Microelectronic Engineering},
  year = 2011,
}

@article{CTT100626838,
  author = {ダリューシュザデ and Kuniyuki KAKUSHIMA and Takashi Kanda and Y.C.Lin and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and E.Y.Chang and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Improving electrical characteristics of W/HfO2/Ino.53Gao.47As gate stacks by altering deposition techniques},
  journal = {Microelectronic Engineering},
  year = 2011,
}

@article{CTT100621281,
  author = {DARYOUSH ZADEH and Soshi Sato and Kuniyuki KAKUSHIMA and A. Srivastava and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and C.K. Sarkar and HIROSHI IWAI},
  title = {Effects of La2O3  incorporation in HfO2 gated nMOSFETs on low-frequency noise},
  journal = {Microelectronics Reliability},
  year = 2011,
}

@inproceedings{CTT100672369,
  author = {Y. Wu and Hiroki Hasegawa and Kuniyuki KAKUSHIMA and 大毛利健治 and T. Watanabe and Hitoshi Wakabayashi and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and 片岡好則 and Kenji Natori and Keisaku Yamada and HIROSHI IWAI},
  title = {Influence of Band Discontinuities at Source-Channel contact in Tunnel FET Performance},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672372,
  author = {DARYOUSH ZADEH and Hiroshi Oomine and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Low DitHigh-k/In0.53Ga0.47As Gate Stack with CET down to 0.73 nm and Thermally Stable Silicide Contact by Suppression of Interfacial Reaction},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672393,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT,},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672405,
  author = {unknown unknown and 竇春萌 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {A study on Resistive Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode with CeOx Buffer Layer},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100669171,
  author = {Mari Okamoto and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {An Ohmic Contact Process for AlGaN/GaN Structures using TiS},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672409,
  author = {Y. Wu and Hiroki Hasegawa and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and 片岡好則 and Kenji Natori and HIROSHI IWAI},
  title = {Influence of structure parameter on Mg2Si-Si Hetero-junction Tunneling FET},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672427,
  author = {K. Tuokedaerhan and Shuhei Hosoda and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode},
  booktitle = {K. Tuokedaerhan, S. Hosoda, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai, “Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode”, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan},
  year = 2014,
}

@inproceedings{CTT100672908,
  author = {wei li and 佐々木亮人 and 大図秀行 and 青木克明 and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Resistivity Measurement of Monoclinic Thin Tungsten Oxide Film Due to Annealing Processesn},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672909,
  author = {Jiangning Chen and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI and 齋藤渉},
  title = {Electrical characteristics of AlGaN/GaN HEMT with La2O3 gate dielectricsn},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672910,
  author = {Taichi Inamura and Takafumi Katou and 佐々木亮人 and 青木克明 and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {A study on silicide semiconductors for high efficiency thin film photovoltaic devices},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100669358,
  author = {K. Tuokedaerhan and Shuhei Hosoda and Yoshinori Nakamura and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Influence of Carbon Incorporation in W Gate Electrode for La-silicate Gate Dielectrics},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100669173,
  author = {Shuhei Hosoda and K. Tuokedaerhan and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Reliability of La-silicate MOS capacitors with tungsten carbide gate electrode for scaled EOT},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100669174,
  author = {宋 禛漢 and Kazuki Matsumoto and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and 杉井信之 and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Resistivity of Ni silicide nanowires and its dependence on Ni film thickness used for the formation},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100669175,
  author = {Hiroshi Oomine and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Electrical characterization of atomic layer deposited La2O3 films on In0.53Ga0.47AAs substrates},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100669354,
  author = {Taichi Inamura and 佐々木亮人 and 青木克明 and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {A stacked sputtered process for β-FeSi2 formation},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100669355,
  author = {Taichi Inamura and 佐々木亮人 and 青木克明 and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {A stacked sputtered process for β-FeSi2 formation},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100658331,
  author = {Yuya Suzuki and ダリューシュザデ and Hiroshi Oomine and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface Engineering of La2O3/InGaAs Capacitors with High Temperature Stability},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658329,
  author = {Jiangning Chen and 鹿 国強 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658328,
  author = {Jiangning Chen and 鹿 国強 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658327,
  author = {Jiangning Chen and 鹿 国強 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658307,
  author = {Wei Li and 中島一裕 and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Extraction of Interface State Density of 3-dimensional Si channel},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662340,
  author = {鹿国強 and 大嶺洋 and ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ and 角嶋邦之 and 西山彰 and 杉井信之 and 片岡好則 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {ALD堆積条件によるLa2O３/In0.53Ga0.47Asキャパシタの電気特性への影響},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662339,
  author = {今村浩章 and 稲村太一 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Krガスを用いた積層シリサイド化スパッタプロセスにより形成したNiSi2の薄膜評価},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662338,
  author = {岡本真里 and 松川佳弘 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {TiSi2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662337,
  author = {小路智也 and 石川昂 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {チャージポンピング法を用いた立体Si構造の絶縁膜界面準位の位置推定},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662336,
  author = {中村嘉基 and 細田修平 and Tuokedaerhan Kamale and 角嶋邦之 and 片岡好則 and 西山彰 and 若林整 and 杉井信之 and 筒井一生 and 名取研二 and 岩井洋},
  title = {W2Cゲート電極とLa-silicateゲート絶縁膜を用いたMOSキャパシタの信頼性評価},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661681,
  author = {長谷川明紀 and 呉研 and 宋 禛漢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {低バンドギャップ、バンドオフセットを持つ半導体シリサイド/Si接合によるトンネルFET特性向上},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661649,
  author = {石川昂 and 小路智也 and 角嶋邦之 and 若林整 and 片岡好則 and 西山彰 and 杉井信之 and 筒井一生 and 名取研二 and 岩井洋},
  title = {チャージポンピング法を用いた三次元Si構造の界面準位密度測定},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654590,
  author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A novel Ni silicidation technology for Schottky diode formation},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654572,
  author = {DARYOUSH ZADEH and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Characterization of metal Schottky junction for InGaAs substrate},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654165,
  author = {unknown unknown and A. Ablimit and Kuniyuki KAKUSHIMA and パールハットアヘメト and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electron transport in ballistic diodes: influence of phonon generation in drain region},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654161,
  author = {マイマイティ マイマイティレャアティ and 関拓也 and Kuniyuki KAKUSHIMA and Ahmet Parhat and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Evaluation of oxide traps in La based oxides for direct high-k/Si capacitor},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654160,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Nitrogen incorporated La-silicate gate dielectric with high scalability},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100649144,
  author = {小山将央 and Naoto Shigemori and Kenji Ozawa and Kiichi Tachi and Kuniyuki KAKUSHIMA and O. Nakatsuka and 大毛利健治 and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Keisaku Yamada and HIROSHI IWAI},
  title = {Si/Ni-Silicide Schottky Junctions with Atomically Flat Interfaces Using NiSi2 Source},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100649139,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Metal Inserted Poly-Si wirh High Temperature Annealing for Achieving EOT of 0.62nm in La-silicate MOSFET},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100660886,
  author = {ダリューシュザデ and Hiroshi Oomine and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Scalable La-silicate Gate Dielectric on InGaAs Substrate with High Thermal Stability and Low Interface State Density},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659873,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface properties of La-silicate gate dielectrics on Si(110)surface},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654679,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Characterization of Effective Electron Mobility in n/MOSFETs with Direct Contact La-silicate/Si Structure},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654678,
  author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and 中塚理 and パールハットアヘメト and Hiroshi Nohira and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical Properties of Ultrathin-Nickel-Silicide Schottky Diodes on Si(100)},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662341,
  author = {宋 禛漢 and 松本一輝 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Niシリサイドナノワイヤ抵抗率のNi膜厚依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100657188,
  author = {マイマイティ マイマイティレャアティ and 関拓也 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Evaluation of oxide traps in La based oxides for direct high-k/Si capacitor},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657187,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Nitrogen incorporated La-silicate gate dielectric with high scalability},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657561,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {(100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657196,
  author = {竇春萌 and Soshi Sato and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and HIROSHI IWAI and takeo hattori},
  title = {Si nanowire FET with asymmetric channel},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657562,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {(100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657189,
  author = {unknown unknown and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Influence of Heat Generation within Drain Region on Transport of Hot Electrons},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657195,
  author = {竇春萌 and Soshi Sato and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and HIROSHI IWAI and takeo hattori},
  title = {Si nanowire FET with asymmetric channel},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100623969,
  author = {Ahmet Parhat and 来山大祐 and 金田翼 and 鈴木 拓也 and Tomotsune Koyanagi and Miyuki Kouda and マイマイティ マイマイティレャアティ and Takamasa Kawanago and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {TiN/W/La2O3 /Si High-k Gate Stack for EOT below o.5nm},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622593,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Rare earth oxide capping effect on La2O3 gate dielectrics toward EOT of 0.5nm},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622594,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Preparation and electrical characterization of CeO2 films for gate dielectrics application: comparative study of CVD and ALD processes},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622598,
  author = {ダリューシュザデ and Takashi Kanda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Effects of In0.53Ga0.47As Surface Preparation on MOS Device Electrical Characterization},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622683,
  author = {Naoto Shigemori and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {An effective suppression process for Ni silicide enchroachment into Si nanowire},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622684,
  author = {小山将央 and Naoto Shigemori and Hideaki Arai and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Lateral encroachment of Ni silicide into silicon nanowire},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622685,
  author = {中島一裕 and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Interface State Density Measurement of Three Dimensional Silicon Structures by Charge Pumping Method},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622686,
  author = {Takamasa Kawanago and 鈴木 拓也 and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {An effective process for oxygen defect suppression for La-based oxide gate dielectric},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622703,
  author = {金田翼 and Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Effect of rare earth oxide capping for La-based gate oxides},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622704,
  author = {マイマイティ マイマイティレャアティ and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and HIROSHI IWAI},
  title = {Remote-surface-roughness scattering-limited electron, mobility in ultrathin high-k gate stacked MOSFETs},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622706,
  author = {来山大祐 and 久保田 透 and Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Precise Control of Silicate Reaction with La2O3 Gate Dielectrics towards Equivalent Oxide Thickness of 0.5 nm},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622711,
  author = {Takashi Kanda and ダリューシュザデ and Y. C. Lin and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and E.Y. Chang and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS Capacitors},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622712,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Metal Inserted Poly-Si Stacks with La2O3 Gate Dielectrics for Scaled EOT and VFB Control by Oxygen Incorporation},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100623983,
  author = {Ahmet Parhat and 来山大祐 and 金田翼 and 鈴木 拓也 and Tomotsune Koyanagi and Miyuki Kouda and マイマイティ マイマイティレャアティ and Takamasa Kawanago and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Effects of Metal Layer Insertion on EOT scaling in TiN/Metal/ La2O3 Si High –k Gate Stacks},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100623994,
  author = {C. Dou and 向井 弘樹 and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Resistive switching behaviors of ReRAM having W/CeO2/Si/TiN structure},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100627777,
  author = {田中 祐樹 and 川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {シリコン基板上に堆積したナノカーボン薄膜への高温短時間アニーリングの影響},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100627781,
  author = {関 拓也 and 来山大祐 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {High-k/Si 直接接合構造における界面準位の定量評価について},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628207,
  author = {Kamale Tuokedaerhan and 金田翼 and マイマイティ マイマイティレャアティ and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {La2O3/n-Si 構造に対するPost Deposition Annealの電気特性への影響},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628208,
  author = {常石佳奈 and 来山大祐 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {W/Tm2O３/n-Si構造キャパシタの電気特性におけるTm2O３膜厚依存性},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628214,
  author = {鈴木佑哉 and 細井隆司 and ダリューシュザデ and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {high-k/In0.53Ga0.47As MOS キャパシタの容量-電圧特性の解析},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628215,
  author = {松本一輝 and 小山将央 and 呉研 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {酸化膜被覆型SiナノワイヤおよびSi Fin構造におけるNiシリサイド成長機構の検討},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628819,
  author = {田村雄太 and 角嶋邦之 and 中塚 理 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {NiとSiの積層薄膜によって形成したシリサイドのシート抵抗に対する熱処理温度の影響},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628833,
  author = {LiWei and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {コンダクタンス法による立体チャネルを有するMOSキャパシタの界面準位密度の評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628847,
  author = {叶真一 and MokhammadSholihul Hadi and 竇春萌 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {希土類酸化物(CeOX)を用いたMIM構造の抵抗スイッチング特性},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628848,
  author = {細田倫央 and 李映勲 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 岩井洋},
  title = {矩形断面SiナノワイヤMOSFETにおけるフォノン散乱に制限された移動度のサイズ依存性},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100654666,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical Properties of Rare-Earth oxides and La2O3 Stacked Gate Dielectrics},
  booktitle = {ECS Transactions},
  year = 2011,
}

@inproceedings{CTT100654916,
  author = {竇春萌 and Soshi Sato and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Si nanowire FET with asymmetric channel},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100615530,
  author = {unknown unknown and Kuniyuki KAKUSHIMA and Ahmet Parhat and M. Geni and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {The Effect of Isotropic and Anisotropic Scattering in Drain Region of Ballistic Channel Diode},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613731,
  author = {M. Mamatrishat and Miyuki Kouda and Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and A. Aierken and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and HIROSHI IWAI},
  title = {Effect of Remote-Surface –Roughness Scattering on Electron Mobility in MOSFETs with High-k Dielectrics},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613732,
  author = {Naoto Shigemori and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Suppression of Lateral Encroachment of Ni Silicide into Si Nanowires using Nitrogen Incorporation},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613728,
  author = {M.Bera and Ahmet Parhat and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and Nobuyuki Sugii and 西山彰 and takeo hattori and HIROSHI IWAI},
  title = {Electrical Properties of Yttrium-Titanium Oxide High-k Gate Dielectric on Ge},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613735,
  author = {Y. Wu and Naoto Shigemori and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and 西山彰 and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Observation of Tunneling FET operation in MOSFET with NiSi/Si Schottky source/channel interface},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613726,
  author = {Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Impact of Alkali-Earth-Elements Incorporation on Vfb R0ll-Off Characteristics of La2O3  Gated MOS Device},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613733,
  author = {来山大祐 and Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {TiN Capping Effect on High Temperature Annealed RE-Oxide MOS Capacitors for Scaled EOT},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616061,
  author = {来山大祐 and 小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {高温短時間熱処理を用いた希土類MOSキャパシタへのTiNキャップ効果},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616068,
  author = {小山 将央 and 茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 西山彰 and 筒井一生 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {窒素導入によるSiナノワイヤ内へのNiシリサイド侵入抑制機構の検討},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616062,
  author = {鈴木 拓也 and 川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {希釈酸素雰囲気熱処理を用いたLaシリケート/Si MOS構造のVFB/Vthシフトの低EOTへの適用},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616063,
  author = {マイマイティ マイマイティレャアティ and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {High-kゲートスタックMOSFETにおける電子移動度のリモート界面ラフネス散乱依存性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613532,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Optimized Oxygen Annealing Process for Vth Tuning of p-MOSFET with High-k/Metal Gate Stacks},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616050,
  author = {金田翼 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Tm-oxide/La2O3構造ゲート絶縁膜の界面特性評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616054,
  author = {細井隆司 and 神田高志 and ダリューシュザデ and Yueh Chin Lin and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and Edward Yi Chang and 名取研二 and 服部健雄 and 岩井洋},
  title = {絶縁膜材料を用いたIn0.53Ga0.47As MOSキャパシタの電気特性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616055,
  author = {呉研 and 茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {トンネルFET動作に向けたNiシリサイド/Si接触におけるトンネル電流の観測},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616058,
  author = {竇 春萌 and マイマイティ  マイマイティレャアティ and ダリューシュザデ and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {希土類(Ce,Eu)酸化物MIM構造の抵抗スイッチング特性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616070,
  author = {中島 一裕 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {チャージポンピング法による立体Si構造の界面準位密度の評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613529,
  author = {角嶋邦之 and 小柳友常 and 来山大祐 and 幸田みゆき and 宋在烈 and 佐藤創志 and 川那子高暢 and M. マイマイティ and 舘喜一 and M.K. Bera and パールハットアヘメト and 野平博司 and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 山田啓作 and 岩井洋},
  title = {LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御},
  booktitle = {，野平博司，筒井一生，西山彰，杉井信之，名取研二，服部健雄，山田啓作，岩井洋“LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御” 応用物理学会分科会 シリコンテクノロジー No.127 pp.4-8（2010年7月22日 ）},
  year = 2010,
}

@inproceedings{CTT100607843,
  author = {Kuniyuki KAKUSHIMA and Tomotsune Koyanagi and 来山大祐 and Miyuki Kouda and Jaeyeol Song and Takamasa Kawanago and M. Mamatrishat and Kiichi Tachi and M. K. Bera and Ahmet Parhat and Hiroshi Nohira and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and Keisaku Yamada and HIROSHI IWAI},
  title = {Direct Contact of High-k/Si Gate Stack for EOT below 0.7 nm using LaCe-silicate Layer with Vfb controllability},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100608700,
  author = {来山大祐 and 小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {EOT=0.5nmに向けた希土類MOSデバイスの高温短時間熱処理の検討},
  booktitle = {電子情報通信学会技術研究報告 pp.43-48},
  year = 2010,
}

@inproceedings{CTT100608701,
  author = {茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {SiナノワイヤへのNiシリサイド形成と過剰な侵入とその抑制に関する検討},
  booktitle = {電子情報通信学会技術研究報告 pp.17-22},
  year = 2010,
}

@inproceedings{CTT100603756,
  author = {来山 大祐 and 小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {来山大祐，小柳友常，角嶋邦之，パールハット アヘメト，筒井一生，西山彰，杉井信之，名取研二，服部健雄，岩井洋“EOT=0.5nm に向けたTaSi2/La2O3/CeOxゲートスタック構造の検討},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603758,
  author = {ダリューシュ ザデ and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {界面にLa2O3 絶縁膜層を挿入したHf系high-kゲートMOSFETの評価},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603759,
  author = {小澤健児 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {La2O3 MOSFETへのCeOxキャップによる電気特性の改善},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603760,
  author = {幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {希土類酸化物をキャップすることによるMOSFETの電気特性の改善},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603745,
  author = {AbudukelimuAbudureheman and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and HIROSHI IWAI and takeo hattori and KENJI NATORI},
  title = {Performance of Silicon Ballistic Nanowire MOSFET with Diverse Orientations and Diameters},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100603765,
  author = {神田高志 and 船水清永 and Yueh Chin Lin and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and Edward Yi Chang and 名取研二 and 服部健雄 and 岩井洋},
  title = {HfO2/ La2O3/ In0.53 Ga0.47As構造の界面特性の変化},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603766,
  author = {川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {酸素添加がWゲートMOSデバイスの電気特性に与える影響},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603768,
  author = {茂森直登 and 新井英朗 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 西山彰 and 筒井一生 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {酸化膜中のSiナノワイヤへのNi拡散の制御},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603761,
  author = {小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {La2O3 MOSデバイスへのアルカリ土類元素キャップによる電気特性の変化},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603744,
  author = {Wataru Hosoda and Kenji Ozawa and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Fabrication of SB-MOSFETs on SOI Substrate Using Ni Silicide Containing Er Interlayer},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100603743,
  author = {Katuya Matano and Kiyohisa Funamizu and Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Electrical Characteristics of Rare Earth (La, Ce, Pr and Tm) Oxides/Silicates Gate Dielectric},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100631005,
  author = {竇春萌 and 向井弘樹 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Feasibility study of Ce oxide for resistive RAM application},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630997,
  author = {久保田透 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Spectroscopic analysis of interface state density in high-k/Si structure},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630995,
  author = {来山大祐 and 小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Process Optimization of Rare-Earth Oxides Gated MOS Devices for Future EOT Scaling},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630993,
  author = {マイマイティ マイマイティレャアティ and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 岩井洋},
  title = {Remote Coulomb and roughness scatterings in gate oxide scaling},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630992,
  author = {金田翼 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Effect of Rare Earth Oxide Capping for La-based Gate Oxides},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630991,
  author = {小柳友常 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Flatband Voltage Shift of La-based Gate Oxides with Alkali-earth-elements Incorporation},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630990,
  author = {川那子高暢 and 鈴木 拓也 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {An Effective Process for Oxygen Defects Suppression for La-based Oxide Gate Dielectric},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630961,
  author = {中島一裕 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Interface state density of 3-D structured Si using charge pumping method},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630960,
  author = {小山将央 and 茂森直登 and 新井英朗 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Lateral encroachment of Ni silicide into Si nanowire},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630958,
  author = {茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 西山彰 and 筒井一生 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Suppression of Lateral Encroachment of Ni Silicide into Si Nanowires using Nitrogen Incorporation},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630957,
  author = {AbudukelimuAbudureheman and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {The Effect of Scattering in Drain Region of Ballistic Channel Diode},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100631006,
  author = {呉研 and 茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Observation of Tunneling FET operation in MOSFET with NiSi/Si Schottky source/channel interface},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100631002,
  author = {ダリューシュザデ and 神田高志 and 細井隆司 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Towards High Performance III-V MOSFET, A Study on high-k Gate Stacks on In0.53Ga0.47As},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100597907,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Experimental Investigation of VFB shift and Effective Mobility in La2O3 MOS Devices},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100598275,
  author = {Tomotsune Koyanagi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Influence of Alkali Earth Elements Capping on Electrical Characteristics of La2O3 Gated MOS Device},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100598270,
  author = {Wataru Hosoda and Kenji Ozawa and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {A Study of Schottky Barrier Height Modulation of NiSi by Interlayer Insertion and Its Application to SOI SB-MOSFETs},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597929,
  author = {Kiyohisa Funamizu and Takashi Kanda and Y.C.Lin and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and E.Y.Chang and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597926,
  author = {Hideaki Arai and Hideyuki Kamimura and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and 西山彰 and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Annealing Reaction for Ni Silicidation of Si Nanowire},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597921,
  author = {A.Abudukelimu and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Current-Voltage Characteristics of Ballistic Nanowire MOSFET by Numerical Analysis},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597891,
  author = {M.K. Bera and Jaeyeol Song and Ahmet Parhat and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Rare-earth based mixed oxide as high-k gate dielectrics for Ge MOSFET},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597764,
  author = {Tomotsune Koyanagi and Koichi Okamoto and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and AKIRA NISHIYAMA and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Impact of Alkali Earth Elements Incorporation on Electrical Characteristics of La2O3 Gated MOS Device},
  booktitle = {},
  year = 2009,
}