@article{CTT100647421,
  author = {ダリューシュザデ and Takashi Kanda and 山下晃司 and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Capacitance-Voltage Characterization of La2O3 Metal-Oxide-Semiconductor Structures on Ino.53Ga.0.47As Substrate with Different Surface Treatment Methods},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100626838,
  author = {ダリューシュザデ and Kuniyuki KAKUSHIMA and Takashi Kanda and Y.C.Lin and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and E.Y.Chang and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Improving electrical characteristics of W/HfO2/Ino.53Gao.47As gate stacks by altering deposition techniques},
  journal = {Microelectronic Engineering},
  year = 2011,
}

@inproceedings{CTT100672397,
  author = {ダリューシュザデ and Hiroshi Oomine and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Highly Scalable La2O3 /InGaAs Gate Stack with Low Interface State Density},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100660886,
  author = {ダリューシュザデ and Hiroshi Oomine and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Scalable La-silicate Gate Dielectric on InGaAs Substrate with High Thermal Stability and Low Interface State Density},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658364,
  author = {Hiroshi Oomine and ダリューシュザデ and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658363,
  author = {Hiroshi Oomine and ダリューシュザデ and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658331,
  author = {Yuya Suzuki and ダリューシュザデ and Hiroshi Oomine and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface Engineering of La2O3/InGaAs Capacitors with High Temperature Stability},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654680,
  author = {Yuya Suzuki and ダリューシュザデ and Ryuji Hosoi and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical characteristics of La2O3/In0.53Ga0.47AAs capacitors with surface nitridation},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654582,
  author = {Ryuji Hosoi and Yuya Suzuki and ダリューシュザデ and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100657348,
  author = {Kuniyuki KAKUSHIMA and Yuya Suzuki and ダリューシュザデ and Takamasa Kawanago and HIROSHI IWAI},
  title = {Development of Core Technologies for Green Nanoelectronics},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657638,
  author = {Yuya Suzuki and ダリューシュザデ and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Effect of In0.53Ga0.47AAs surface nitridation on electrical characteristics of high-k/capacitors},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100622711,
  author = {Takashi Kanda and ダリューシュザデ and Y. C. Lin and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and E.Y. Chang and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS Capacitors},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622598,
  author = {ダリューシュザデ and Takashi Kanda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Effects of In0.53Ga0.47As Surface Preparation on MOS Device Electrical Characterization},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628214,
  author = {鈴木佑哉 and 細井隆司 and ダリューシュザデ and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {high-k/In0.53Ga0.47As MOS キャパシタの容量-電圧特性の解析},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628213,
  author = {沢尻 侑也 and 山下晃司 and 小松 新 and ダリューシュザデ and 角嶋邦之 and 岩井洋 and 野平博司},
  title = {AR-XPSによる(NH４) ２S処理したIn0.53Ga0.47As表面の化学結合状態の評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100616054,
  author = {細井隆司 and 神田高志 and ダリューシュザデ and Yueh Chin Lin and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and Edward Yi Chang and 名取研二 and 服部健雄 and 岩井洋},
  title = {絶縁膜材料を用いたIn0.53Ga0.47As MOSキャパシタの電気特性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616058,
  author = {竇 春萌 and マイマイティ  マイマイティレャアティ and ダリューシュザデ and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {希土類(Ce,Eu)酸化物MIM構造の抵抗スイッチング特性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100603758,
  author = {ダリューシュ ザデ and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {界面にLa2O3 絶縁膜層を挿入したHf系high-kゲートMOSFETの評価},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100631002,
  author = {ダリューシュザデ and 神田高志 and 細井隆司 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Towards High Performance III-V MOSFET, A Study on high-k Gate Stacks on In0.53Ga0.47As},
  booktitle = {},
  year = 2010,
}