@article{CTT100658722,
  author = {Y. Wu and 竇春萌 and F. Wei and Kuniyuki KAKUSHIMA and 大毛利健治 and パールハットアヘメト and T. Watanabe and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and Keisaku Yamada and 片岡好則 and takeo hattori and HIROSHI IWAI},
  title = {Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability},
  journal = {Japanese Journal of Applied Physics},
  year = 2013,
}

@inproceedings{CTT100672369,
  author = {Y. Wu and Hiroki Hasegawa and Kuniyuki KAKUSHIMA and 大毛利健治 and T. Watanabe and Hitoshi Wakabayashi and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and 片岡好則 and Kenji Natori and Keisaku Yamada and HIROSHI IWAI},
  title = {Influence of Band Discontinuities at Source-Channel contact in Tunnel FET Performance},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100658393,
  author = {宋  禛漢 and 小山将央 and Kazuki Matsumoto and Kuniyuki KAKUSHIMA and 中塚理 and 大毛利健治 and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Keisaku Yamada and HIROSHI IWAI},
  title = {Atomically flat Ni-silicide/Si interface using NiSi2 sputtering},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100649144,
  author = {小山将央 and Naoto Shigemori and Kenji Ozawa and Kiichi Tachi and Kuniyuki KAKUSHIMA and O. Nakatsuka and 大毛利健治 and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Keisaku Yamada and HIROSHI IWAI},
  title = {Si/Ni-Silicide Schottky Junctions with Atomically Flat Interfaces Using NiSi2 Source},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100657535,
  author = {大毛利健治 and W. Feng and R. Hettiarachchi and Yeonghun Lee and Soshi Sato and Kuniyuki KAKUSHIMA and M. Sato and K. Fukuda and M. Niwa and K. Yamabe and Kenji Shiraishi and HIROSHI IWAI and Keisaku Yamada},
  title = {Low-frequency noise reduction in Si Nanowire MOSFETs},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657534,
  author = {大毛利健治 and W. Feng and R. Hettiarachchi and Yeonghun Lee and Soshi Sato and Kuniyuki KAKUSHIMA and M. Sato and K. Fukuda and M. Niwa and K. Yamabe and Kenji Shiraishi and HIROSHI IWAI and Keisaku Yamada},
  title = {Low-frequency noise reduction in Si Nanowire MOSFETs},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657536,
  author = {大毛利健治 and W. Feng and R. Hettiarachchi and Yeonghun Lee and Soshi Sato and Kuniyuki KAKUSHIMA and M. Sato and K. Fukuda and M. Niwa and K. Yamabe and Kenji Shiraishi and HIROSHI IWAI and Keisaku Yamada},
  title = {Low-frequency noise reduction in Si Nanowire MOSFETs},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657559,
  author = {櫻井蓉子 and 大毛利健治 and Keisaku Yamada and Kuniyuki KAKUSHIMA and T. Tayagaki and HIROSHI IWAI and Y. Kanemitsu and K. Asakawa and Kenji Shiraishi and S. Nomura},
  title = {Photoluminescence Properties of Si Nanolayers and Si Nanowires},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100631046,
  author = {佐藤創志 and 角嶋邦之 and パールハットアヘメト and 大毛利健治 and 名取研二 and 山田啓作 and 岩井洋},
  title = {Effects of corners of channel cross-section on electrical performance of silicon nanowire field-effect transistors},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100654915,
  author = {Y. Wu and Kuniyuki KAKUSHIMA and 大毛利健治 and Akira Nishiyama and HIROSHI IWAI and Keisaku Yamada},
  title = {A Study on Fabrication and Analytic Modeling of novel Schottky contact tunneling Transistors},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100654676,
  author = {櫻井 蓉子 and 大毛利健治 and Keisaku Yamada and Kenji Shiraishi and Kuniyuki KAKUSHIMA and HIROSHI IWAI and S. Nomura},
  title = {Photoluminescence Characterization of the Interface Properties of Si Nanolayers and Nanowires},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100603770,
  author = {佐藤創志 and 新井英朗 and 角嶋邦之 and パールハットアヘメト and 大毛利 健治 and 名取研二 and 岩井洋 and 山田啓作},
  title = {Siナノワイヤトランジスタの電気特性の断面形状依存症},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}