論文

• Y. Wu, 竇春萌, F. Wei, Kuniyuki KAKUSHIMA, 大毛利健治, パールハットアヘメト, T. Watanabe, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Keisaku Yamada, 片岡好則, takeo hattori, HIROSHI IWAI. Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability, Japanese Journal of Applied Physics, Vol. 52, No. 4S, pp. 04CC28-1-04CC28-5, Apr. 2013.

国際会議発表 (査読なし・不明)

• Y. Wu, Hiroki Hasegawa, Kuniyuki KAKUSHIMA, 大毛利健治, T. Watanabe, Hitoshi Wakabayashi, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, 片岡好則, Kenji Natori, Keisaku Yamada, HIROSHI IWAI. Influence of Band Discontinuities at Source-Channel contact in Tunnel FET Performance, 2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES-SCINCE AND TECHNOLOGY-, 2014.
• 宋 禛漢, 小山将央, Kazuki Matsumoto, Kuniyuki KAKUSHIMA, 中塚理, 大毛利健治, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Keisaku Yamada, HIROSHI IWAI. Atomically flat Ni-silicide/Si interface using NiSi2 sputtering, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• 小山将央, Naoto Shigemori, Kenji Ozawa, Kiichi Tachi, Kuniyuki KAKUSHIMA, O. Nakatsuka, 大毛利健治, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Keisaku Yamada, HIROSHI IWAI. Si/Ni-Silicide Schottky Junctions with Atomically Flat Interfaces Using NiSi2 Source, 41st European Solid-State Device Research Conference, 2013.
• 大毛利健治, W. Feng, R. Hettiarachchi, Yeonghun Lee, Soshi Sato, Kuniyuki KAKUSHIMA, M. Sato, K. Fukuda, M. Niwa, K. Yamabe, Kenji Shiraishi, HIROSHI IWAI, Keisaku Yamada. Low-frequency noise reduction in Si Nanowire MOSFETs, ECS 221st Meeting, ECS Transactions, Vol. 45, No. 3, pp. 437-442, 2012.
• 大毛利健治, W. Feng, R. Hettiarachchi, Yeonghun Lee, Soshi Sato, Kuniyuki KAKUSHIMA, M. Sato, K. Fukuda, M. Niwa, K. Yamabe, Kenji Shiraishi, HIROSHI IWAI, Keisaku Yamada. Low-frequency noise reduction in Si Nanowire MOSFETs, ECS 221st Meeting, ECS Transactions, Vol. 45, No. 3, pp. 437-442, 2012.
• 大毛利健治, W. Feng, R. Hettiarachchi, Yeonghun Lee, Soshi Sato, Kuniyuki KAKUSHIMA, M. Sato, K. Fukuda, M. Niwa, K. Yamabe, Kenji Shiraishi, HIROSHI IWAI, Keisaku Yamada. Low-frequency noise reduction in Si Nanowire MOSFETs, ECS 221st Meeting, ECS Transactions, Vol. 45, No. 3, pp. 437-442, 2012.
• 櫻井蓉子, 大毛利健治, Keisaku Yamada, Kuniyuki KAKUSHIMA, T. Tayagaki, HIROSHI IWAI, Y. Kanemitsu, K. Asakawa, Kenji Shiraishi, S. Nomura. Photoluminescence Properties of Si Nanolayers and Si Nanowires, Tsukuba Nanotechnology Symposium 2012(TNS’12), 2012.
• Y. Wu, Kuniyuki KAKUSHIMA, 大毛利健治, Akira Nishiyama, HIROSHI IWAI, Keisaku Yamada. A Study on Fabrication and Analytic Modeling of novel Schottky contact tunneling Transistors, Tsukuba Nanotechnology Symposium(TNS’11), 2011.
• 櫻井 蓉子, 大毛利健治, Keisaku Yamada, Kenji Shiraishi, Kuniyuki KAKUSHIMA, HIROSHI IWAI, S. Nomura. Photoluminescence Characterization of the Interface Properties of Si Nanolayers and Nanowires, ECS 220th Meeting, 2011.

国内会議発表 (査読なし・不明)

• 佐藤創志, 角嶋邦之, パールハットアヘメト, 大毛利健治, 名取研二, 山田啓作, 岩井洋. Effects of corners of channel cross-section on electrical performance of silicon nanowire field-effect transistors, ゲートスタック研究会－材料･プロセス・評価の物理－（第16回研究会）, 2011.
• 佐藤創志, 新井英朗, 角嶋邦之, パールハットアヘメト, 大毛利 健治, 名取研二, 岩井洋, 山田啓作. Siナノワイヤトランジスタの電気特性の断面形状依存症, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-270, Apr. 2010.

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