論文

• Takuya NAGASAKA, Masatoshi KONDO, Takeo MUROGA, Nobuaki, NODA, Akio SAGARA, Osamu MOTOJIMA, Akihiro SUZUKI, Takayuki TERAI. Fluoridation and oxidation characteristics of JLF-1 and NIFS HEAT-2 low-activation structural materials, Journal of Nuclear Materials, Vol. 386-388, pp. 716-719, Apr. 2009.  公式リンク  
  
• Nobuhiko Nishiyama, Akimasa Mizutani, Nobuaki Hatori, Fumio Koyama, Kenichi Iga. A completely single-mode and single polarization vertical-cavity surface emitting lasers grown on GaAs (311)B substrate, Jpn. J. Appl. Phys., vol. 37, no. 6A, pp. L640-L642, July 1998.
• Akimasa Mizutani, Nobuaki Hatori, Nobuhiko Nishiyama, FUMIO KOYAMA, Kenichi Iga. MOCVD grown InGaAs/GaAs vertical cavity surface emitting laser on GaAs (311)B substrate, Electronics Letters, Vol. 33, No. 22, pp. 1877-1878, Oct. 1997.
• Akimasa Mizutani, Nobuaki Hatori, Ohnoki, N, Nobuhiko Nishiyama, Ohtake, N, FUMIO KOYAMA, Kenichi Iga. P-type AlAs growth on a GaAs (311)B substrate using carbon auto-doping for low resistance GaAs/AlAs distributed Bragg reflectors, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, Vol. 36, No. 11, pp. 6728-6729, Aug. 1997.
• Hatori, N, Mizutani, A, Nobuhiko Nishiyama, Koyama, F, Iga, K. Threshold reduction of p-type delta-doped InGaAs/GaAs quantum well lasers by using auto-doping of carbon, Electronics Letters, Vol. 33, No. 12, pp. 1096-1097, June 1997.

国際会議発表 (査読有り)

• N. Nishiyama, A. Mizutani, N. Hatori, F. Koyama, K. Iga. Single mode and stable polarization InGaAs/GaAs surface emitting laser grown on GaAs(311)B substrate, 16th Int. Semiconductor Laser Conf., ISLC'9, ThA1, Oct. 1998.
• N. Ohnoki, T. Mukaihara, Y. Hayashi, N. Hatori, F. Koyama, K. Iga. Optical characteristics of Au/GaAs polarizer for controlling surface-emitting laser polarization, The Pacific Rim Conf. on Lasers and Electro-Optics 1995 (CLEO/PR'95), ThC3, July 1995.
• T. Mukaihara, N. Ohnoki, Y. Hayashi, N. Hatori, F. Koyama, K. Iga. Excess intensity noise of vertical-cavity surface-emitting lasers caused by polarization fluctuation, The Pacific Rim Conf. on Lasers and Electro-Optics 1995(CLEO/PR'95), ThC2, July 1995.
• Y. Hayashi, T. Mukaihara, N. Hatori, N. Ohnoki, A. Matsutani, F. Koyama, K. Iga. A record low threshold InGaAs/GaAlAs vertical-cavity surface-emitting laser, Quantum Optoelectronics Conf., QOE'95, Mar. 1995.
• F. Koyama, T. Mukaihara, Y. Hayashi, N. Ohnoki, N. Hatori, K. Iga. Low threshold multi-wavelength VCSEL arrays fabricated by nonplanar MOCVD, SPIE'95, 2399, pp. 629-635, Feb. 1995.
• T. Mukaihara, Y. Hayashi, N. Hatori, N. Ohnoki, A. Matsutani, F. Koyama, K. Iga. 0.33 mA threshold InGaAs/GaAs vertical-cavity surface-emitting lasers grown by MOCVD, Conf. on Lasers and Electro-Optics 1995 (CLEO'95), CTuB5, 1995.
• F. Koyama, T. Mukaihara, Y. Hayashi, N. Ohnoki, N. Hatori, K. Iga. Multi-wavelength vertical cavity surface emitting laser arrays fabricated by nonplanar MOCVD, 20th European Conf. on Optical Communication, ECOC'94, Post deadline paper, pp. 125-127, Sept. 1994.

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