@book{CTT100809734,
  author = {井手啓介 and 片瀬貴義 and 野村研二 and 雲見日出也 and 細野秀雄 and 神谷利夫},
  title = {アモルファス酸化物半導体：In－Ga－Zn－O},
  publisher = {},
  year = 2019,
}

@book{CTT100640596,
  author = {野村研二 and 神谷利夫 and 細野秀雄},
  title = {第6章：N型a-In-Ga-Zn-O/P型c-Siヘテロ接合型太陽電池の開発},
  publisher = {},
  year = 2012,
}

@article{CTT100680963,
  author = {Y. Hanyu and K. Abe and K. Domen and K. Nomura and H. Hiramatsu and H. Kumomi and H. Hosono and T. Kamiya},
  title = {Effects of High-Temperature Annealing on Operation Characteristics of a-In-Ga-Zn-O TFTs},
  journal = {J. Displ. Technol.},
  year = 2014,
}

@article{CTT100677106,
  author = {Kazuo Yamada and Kenji Nomura and Katsumi Abe and Satoshi Takeda and Hideo Hosono},
  title = {Examination of the ambient effects on the stability of amorphous indium-gallium-zinc oxide thin film transistors using a laser-glass-sealing technology},
  journal = {Appl. Phys. Lett.},
  year = 2014,
}

@article{CTT100677104,
  author = {Takaya Miyase and Ken Watanabe and Isao Sakaguchi and Naoki Ohashi and Kay Domen and Kenji Nomura and Hidenori Hiramatsu and Hideya Kumomi and Hideo Hosono and Toshio Kamiya},
  title = {Roles of Hydrogen in Amorphous Oxide Semiconductor In-Ga-Zn-O: Comparison of Conventional and Ultra-High-Vacuum Sputtering},
  journal = {ECS J. Solid State Sci. Technol.},
  year = 2014,
}

@article{CTT100666128,
  author = {Yuichiro Hanyu and Kay Domen and Kenji Nomura and Hidenori Hiramatsu and Hideya Kumomi and Hideo Hosono and Toshio Kamiya},
  title = {Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors},
  journal = {Appl. Phys. Lett.},
  year = 2013,
}

@article{CTT100666129,
  author = {Ken Watanabe and Dong-Hee Lee and Isao Sakaguchi and Kenji Nomura and Toshio Kamiya and Hajime Haneda and Hideo Hosono and Naoki Ohashi},
  title = {Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere},
  journal = {Appl. Phys. Lett.},
  year = 2013,
}

@article{CTT100648229,
  author = {Kenji Nomura and Toshio Kamiya and Hideo Hosono},
  title = {Effects of Diffusion of Hydrogen and Oxygen on Electrical Properties of Amorphous Oxide Semiconductor, In-Ga-Zn-O},
  journal = {ECS J. Solid State Sci. Technol},
  year = 2013,
}

@article{CTT100634062,
  author = {Mutsumi Kimura and Takayuki Hasegawa and Keisuke Ide and Kenji Nomura and Toshio Kamiya and Hideo Hosono},
  title = {Light Irradiation History Sensor Using Amorphous In-Ga-Zn-O Thin-Film Transistor Exposed to Ozone Annealing},
  journal = {IEEE Electron Dev. Lett.},
  year = 2012,
}

@article{CTT100634902,
  author = {Keisuke Ide and Kenji Nomura and Hidenori Hiramatsu and Toshio Kamiya and Hideo Hosono},
  title = {Structural relaxation in amorphous oxide semiconductor},
  journal = {J. Appl. Phys},
  year = 2012,
}

@article{CTT100634058,
  author = {Hiromichi Ohta and Taku Mizuno and Shijian Zheng and Takeharu Kato and Yuichi Ikuhara and Katsumi Abe and Hideya Kumomi and Kenji Nomura and Hideo Hosono},
  title = {Unusually Large Enhancement of Thermopower in an Electric Field InducedTwo-Dimensional Electron Gas},
  journal = {Advanced. Materials},
  year = 2012,
}

@article{CTT100634064,
  author = {Katsumi Abe and Kenji Takahashi and Ayumu Sato and Hideya Kumomi and Kenji Nomura and Toshio Kamiya and Hideo Hosono},
  title = {Operation model with carrier-density dependent mobility for amorphous In-Ga-Zn-O thin-film transistors},
  journal = {Thin Solid Films},
  year = 2012,
}

@article{CTT100634065,
  author = {Keisuke Ide and Yutomo Kikuchi and Kenji Nomura and Toshio Kamiya and Hideo Hosono},
  title = {Effects of low-temperature ozone annealing on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors},
  journal = {Thin Solid Films},
  year = 2012,
}

@article{CTT100634884,
  author = {Kenji Nomura and Toshio Kamiya and Hideo Hosono:},
  title = {Stability and high-frequency operation of amorphous In-Ga-Zn-O thin-film transistors with various passivation layers},
  journal = {Thin Solid Films},
  year = 2012,
}

@article{CTT100634894,
  author = {Kyeongmi Lee and Kenji Nomura and Hiroshi Yanagi and Toshio Kamiya and Hideo Hosono},
  title = {Photovoltaic properties of n-type amorphous In-Ga-Zn-O and p-type single crystal Si heterojunction solar cells: Effects of Ga content},
  journal = {Thin Solid Films},
  year = 2012,
}

@article{CTT100640580,
  author = {Mutsumi Kimura and Takayuki Hasegawa and Keisuke Ide and Kenji Nomura and Toshio Kamiya and Hideo Hosono},
  title = {Maximum applied voltage detector using amorphous In-Ga-Zn-O thin film transistor exposed to ozone annealing},
  journal = {Solid-State Electronics},
  year = 2012,
}

@article{CTT100640588,
  author = {Dong Hee Lee and Kenji Nomura and Toshio Kamiya and Hideo Hosono},
  title = {Metal-Semiconductor Field-Effect Transistor Made Using Amorphous In-Ga-Zn-O Channel and Bottom Pt Schottky Contact Structure at 200°C},
  journal = {ECS Solid State Letters},
  year = 2012,
}

@article{CTT100645989,
  author = {Kyeongmi Lee and Eiji Ikenaga and Takeharu Sugiyama and Keisuke Kobayashi and Kyeongmi Lee and Kenji Nomura and Hiroshi Yanagi and Toshio Kamiya and Eiji Ikenaga and Takeharu Sugiyama and Keisuke Kobayashi and Hideo Hosono},
  title = {Band alignment of InGaZnO<sub>4</sub>/Si interface by hard x-ray photoelectron spectroscopy},
  journal = {J. Appl. Phys},
  year = 2012,
}

@article{CTT100645992,
  author = {Katsumi Abe and Kenji Nomura and Toshio Kamiya and Hideo Hosono},
  title = {Optical evidence for quantization in transparent amorphous oxide semiconductor superlattice},
  journal = {Phys. Rev. B Rapid Communications},
  year = 2012,
}

@article{CTT100631678,
  author = {D.H. Lee and K. Nomura and T. Kamiya and H. Hosono},
  title = {Diffusion-Limited a-IGZO/Pt Schottky Junction Fabricated at 200oC on a Flexible Substrate},
  journal = {IEEE Electron Device Letters},
  year = 2011,
}

@article{CTT100630115,
  author = {Keisuke Ide and Yutomo Kikuchi and Kenji Nomura and Mutsumi Kimura and Toshio Kamiya and Hideo Hosono},
  title = {Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors},
  journal = {Appl. Phys. Lett},
  year = 2011,
}

@article{CTT100631680,
  author = {K. Abe and N. Kaji and H. Kumomi and K. Nomura and T.Kamiya and M. Hirano and H. Hosono},
  title = {Simple Analytical Model of On Operation of Amorphous In–Ga–Zn–O Thin-Film Transistors},
  journal = {IEEEE Trans. Electron Dev},
  year = 2011,
}

@article{CTT100630113,
  author = {Kenji Nomura and Toshio Kamiya and Hideo Hosono},
  title = {Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects},
  journal = {Appl. Phys. Lett.,},
  year = 2011,
}

@article{CTT100630090,
  author = {Tao Chen and Meng-Yue Wu and Ryoichi Ishihara and Kenji Nomura and Toshio Kamiya and Hideo Hosono and C. I. M. Beenakker},
  title = {Solid-phase epitaxial growth of (111)-oriented Si film on InGaO<sub>3</sub>(ZnO)<sub>5</sub> buffer layer},
  journal = {J Mater Sci: Mater Electron},
  year = 2011,
}

@article{CTT100625490,
  author = {Kenji Nomura and Toshio Kamiya and Hideo Hosono},
  title = {Ambipolar Oxide Thin-Film Transistor},
  journal = {Adv. Mater.},
  year = 2011,
}

@article{CTT100624021,
  author = {Kyeongmi Lee and Kenji Nomura and Hiroshi Yanagi and Toshio Kamiya and Hideo Hosono},
  title = {Electronic Structure and Photovoltaic Properties of n-Type Amorphous In-Ga-Zn-O and p-Type Single Crystal Si Heterojunctions},
  journal = {Electrochemical and Solid-State Letters},
  year = 2011,
}

@article{CTT100622489,
  author = {Kenji Nomura and Toshio Kamiya and Eiji Ikenaga and Hiroshi Yanagi and Keisuke Kobayashi and Hideo Hosono},
  title = {Depth analysis of subgap electronic states in amorphous oxide semiconductor, a<sub>-</sub>In<sub>-</sub>Ga<sub>-</sub>Zn<sub>-</sub>O, studied by hard x<sub>-</sub>ay photoelectron spectroscopy},
  journal = {JOURNAL OF APPLIED PHYSICS},
  year = 2011,
}

@article{CTT100622447,
  author = {Lijie Shao and Kenji Nomura and Toshio Kamiya and Hideo Hosono},
  title = {Operation Characteristics of Thin-Film Transistors Using Very Thin Amorphous In-Ga-Zn-O Channels},
  journal = {Electrochemical and Solid-State Letters},
  year = 2011,
}

@article{CTT100612476,
  author = {Kenji Nomura and Takashi Aoki and kiyosi Nakamura and Toshio Kamiya and Takashi Nakanishi and Takayuki Hasegawa and Mutsumi Kimura and Takeo Kawase and Masahiro Hirano and Hideo Hosono},
  title = {Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n-type a-In-Ga-Zn-O and p-type poly-(9,9-dioctylfluorene-co-bithiophene)thin-film transistors},
  journal = {APPLIED PHYSICS LETTERS},
  year = 2010,
}

@article{CTT100613501,
  author = {Hisato Yabuta and Nobuyuki Kaji and Ryo Hayashi and Hideya Kumomi and Kenji Nomura and Toshio Kamiya and Masahiro Hirano and Hideo Hosono},
  title = {Sputtering formation of p-type SnO thin-film transistors on glass toward oxide complimentary circuits},
  journal = {APPLIED PHYSICS LETTERS},
  year = 2010,
}

@article{CTT100612474,
  author = {Toshio Kamiya and Kenji Nomura and Hideo Hosono},
  title = {Subgap states, doping and defect formation energies in amorphous oxide semiconductor a-InGaZnO4 studied by density functional theory},
  journal = {Phys. Status Solidi A},
  year = 2010,
}

@article{CTT100612473,
  author = {Mutsumi Kimura and Toshio Kamiya and Takashi Nakanishi and Kenji Nomura and Hideo Hosono},
  title = {Intrinsic carrier mobility in amorphous InGaZnO thin-film transistors determined by combined field-effect technique},
  journal = {APPLIED PHYSICS LETTERS},
  year = 2010,
}

@article{CTT100612851,
  author = {Y. Nishio and K. Nomura and H. Yanagi and T. Kamiya and M. Hirano and H. Hosono},
  title = {Short-channel nanowire transistor using a nanoporous crystal semiconductor 12CaO•7Al<sub>2</sub>O<sub>3</sub>},
  journal = {Materials Science and Engineering B},
  year = 2010,
}

@article{CTT100616332,
  author = {Kenji Nomura and Toshio Kamiya and Hideo Hosono},
  title = {Interface and bulk effects for bias-light-illumination instability in amorphous-In-Ga-Zn-O thin-film transistors},
  journal = {J. Soc. Inf. Display},
  year = 2010,
}

@article{CTT100616339,
  author = {Hiromichi Ohta and Yukio Sato and Takeharu Kato and SungWng Kim and Kenji Nomura and Yuichi Ikuhara and Hideo Hosono},
  title = {Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal},
  journal = {Nature Comm.},
  year = 2010,
}

@article{CTT100612477,
  author = {Dong Hee Lee and Ken-ichi Kawamura and Kenji Nomura and Toshio Kamiya and Hideo Hosono},
  title = {Large Photoresponse in Amorphous InGaZnO and Origin of Reversible and Slow Decay},
  journal = {Electrochemical and Solid-State Letters},
  year = 2010,
}

@inproceedings{CTT100674589,
  author = {M. Kimura and T. Hasegawa and T. Matsuda and K. Ide and K. Nomura and T. Kamiya and H. Hosono},
  title = {Light Irradiation and Applied Voltage History Sensors Using Amorphous In-Ga-Zn-O Thin- Film Transistors Exposed to Ozone Annealing and Fabricated under High Oxygen Pressure},
  booktitle = {Digest of AM-FPD2014},
  year = 2014,
}

@inproceedings{CTT100666124,
  author = {T. Hasegawa and M. Inoue and T. Matsuda and M. Kimura and K. Nomura and T. Kamiya and H. Hosono},
  title = {3-D Stacked Complementary TFT Devices Using n-Type a-IGZO and p-Type F8T2 TFTs - Comparison between Stacked and Sided Configurations -},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100666123,
  author = {T. Kamiya and K. Ide and K. Nomura and H. Kumomi and H. Hosono},
  title = {Structural Relaxation, Crystallization, and Defect Passivation in Amorphous In-Ga-Zn-O},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658314,
  author = {Mutsumi Kimura and Takayuki Hasegawa and Masashi Inoue and Kenji Nomura and Toshio Kamiya and Hideo Hosono},
  title = {3-D Stacked Complementary TFT Devicesusing n-type -IGZO and p-type F8T2 TFTs Operation Confirmation of NOT and NAND Logic Circuits},
  booktitle = {SID 2013 DIGEST},
  year = 2013,
}

@inproceedings{CTT100658313,
  author = {Toshio Kamiya and Kenji Nomura and Hideo Hosono},
  title = {Electronic Structure, Carrier Transport, Defects and Impurities in Amorphous Oxide Semiconductor},
  booktitle = {SID 2013 DIGEST},
  year = 2013,
}

@inproceedings{CTT100647059,
  author = {Toshio Kamiya and Kenji Nomura and Hideo Hosono},
  title = {Present Status, Knowledge and Issues of Oxide Semiconductor Technology},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100632361,
  author = {Kazuo Yamada and Kenji Nomura and Satoshi Takeda and Hideo Hosono},
  title = {Novel approach for preventing atmosphere effects on Vth stability of a-In-Ga-Zn-O thin film transistor by glass sealing},
  booktitle = {Proc. IDW'11},
  year = 2011,
}

@inproceedings{CTT100632359,
  author = {Kenji Nomura and Toshio Kamiya and Hideo Hosono},
  title = {Bias stability for a-In-Ga-Zn-O-TFTs: Origin of threshold voltage instability and the role of thermal annealing and passivation},
  booktitle = {Proc. IDW'11},
  year = 2011,
}

@inproceedings{CTT100632362,
  author = {Hideo Hosono and Kenji Nomura and Toshio Kamiya},
  title = {An Ambipolar Oxide TFT},
  booktitle = {SID Digest},
  year = 2011,
}

@inproceedings{CTT100745306,
  author = {篠崎智正 and 野村研二 and 片瀬貴義 and 神谷利夫 and 平野正浩 and 細野秀雄},
  title = {層状酸化物結晶InGaZnO4の単結晶薄膜作製とバッファー層への応用},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100745360,
  author = {Tomomasa Shinozaki and Kenji Nomura and Takayoshi Katase and Toshio Kamiya and Masahiro Hirano and Hideo Hosono},
  title = {Epitaxial growth of GaN films on InGaZnO4 single crystalline buffer layer},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100645678,
  author = {T. Katase and K. Nomura and H. Yanagi and H. Ohta and T. Kamiya and M. Hirano and H. Hosono},
  title = {Atomic and electronic structures of ScAlMgO4 and over-grown GaN epitaxial film},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100645688,
  author = {片瀬貴義 and 野村研二 and 太田裕道 and 柳博 and 神谷利夫 and 平野正浩 and 細野秀雄},
  title = {R-SPE法によるScAlMgO4単結晶薄膜の作製とZnO格子整合バッファ層への応用},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100645691,
  author = {片瀬貴義 and 野村研二 and 篠崎智正 and 柳博 and 太田裕道 and 神谷利夫 and 平野正浩 and 細野秀雄},
  title = {GaN薄膜成長におけるScAlMgO4格子整合バッファ層の効果},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100645680,
  author = {T. Katase and K. Nomura and H. Ohta and H. Yanagi and T. Kamiya and M. Hirano and H. Hosono},
  title = {Atomically-flat ScAlMgO4 single-crystalline films fabricated by reactive solid-phase epitaxy (R-SPE): Effects on growth of ZnO and GaN},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100645681,
  author = {T. Katase and K. Nomura and H. Ohta and H. Yanagi and T. Kamiya and M. Hirano and H. Hosono},
  title = {Low-Temperature, Large-Domain Growth of ZnO and GaN Epitaxial Films on Lattice-Matched Buffer Layers},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100645689,
  author = {片瀬貴義 and 野村研二 and 太田裕道 and 柳博 and 神谷利夫 and 平野正浩 and 細野秀雄},
  title = {反応性固相エピタキシャル成長法におけるホモロガスInGaO3(ZnO)m薄膜成長のBiフラックス効果},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100645693,
  author = {T. Katase and K. Nomura and H. Ohta and H. Yanagi and T. Kamiya and M. Hirano and H. Hosono},
  title = {Fabrication of ScAlMgO4 single-crystalline thin films and its application to lattice-matched buffer layer for ZnO},
  booktitle = {Thin Solid Films,},
  year = 2007,
}

@inproceedings{CTT100645690,
  author = {片瀬貴義 and 野村研二 and 太田裕道 and 柳博 and 神谷利夫 and 平野正浩 and 細野秀雄},
  title = {ホモロガス酸化物InGaO3(ZnO)m単結晶薄膜のBiフラックスによる高品質化},
  booktitle = {},
  year = 2006,
}

@misc{CTT100795945,
  author = {Keisuke Ide and Kenji Nomura and Hideo Hosono and Toshio Kamiya},
  title = {Electronic Defects in Amorphous Oxide Semiconductors},
  year = 2018,
}

@misc{CTT100646040,
  author = {材料の科学と工学 and 野村研二 and 細野秀雄},
  title = {機能性酸化物薄膜と電子デバイス応用},
  year = 2012,
}

@misc{CTT100622553,
  author = {細野秀雄 and 野村研二},
  title = {酸化物TFTの最近の動向と展望},
  year = 2011,
}

@misc{CTT100613580,
  author = {Toshio Kamiya and Kenji Nomura and Hideo Hosono},
  title = {Present status of amorphous InGaZnO thin-film transistors},
  year = 2010,
}

@misc{CTT100669844,
  author = {細野秀雄 and 野村研二 and 神谷利夫},
  title = {アモルファス酸化物半導体を活性層とした薄膜トランジスタ構造とその製造方法},
  howpublished = {登録特許},
  year = 2016,
  month  = {},
  note   = {特願2012-149286(2012/07/03), 特開2014-011425(2014/01/20), 特許第5946130号(2016/06/10)}
}


@misc{CTT100653033,
  author = {細野秀雄 and 神谷利夫 and 野村研二 and 中川　克己 and 佐野　政史},
  title = {非晶質酸化物、及び電界効果型トランジスタ},
  howpublished = {登録特許},
  year = 2014,
  month  = {},
  note   = {特願2012-148444(2012/07/02), 特開2012-248853(2012/12/13), 特許第5589030号(2014/08/01)}
}


@misc{CTT100649187,
  author = {細野秀雄 and 神谷利夫 and 野村研二 and 安部　勝美},
  title = {非晶質酸化物を利用した半導体デバイス},
  howpublished = {公開特許},
  year = 2012,
  month  = {},
  note   = {特願2012-135638(2012/06/15), 特開2012-231153(2012/11/22)}
}


@misc{CTT100646428,
  author = {細野秀雄 and 野村研二 and 神谷利夫 and 藪田　久人 and 佐野　政史 and 岩崎　達哉},
  title = {電界効果型トランジスタの製造方法
},
  howpublished = {登録特許},
  year = 2013,
  month  = {},
  note   = {特願2012-058252(2012/03/15), 特開2012-164986(2012/08/30), 特許第5401572号(2013/11/01)}
}


@misc{CTT100646404,
  author = {細野秀雄 and 野村研二 and 神谷利夫 and 藪田　久人 and 佐野　政史 and 岩崎　達哉},
  title = {電界効果型トランジスタの製造方法
},
  howpublished = {登録特許},
  year = 2013,
  month  = {},
  note   = {特願2012-058253(2012/03/15), 特開2012-164987(2012/08/30), 特許第5401573号(2013/11/01)}
}


@misc{CTT100667593,
  author = {細野秀雄 and 野村研二 and 神谷利夫 and 藪田　久人 and 佐野　政史 and 岩崎　達哉},
  title = {電界効果型トランジスタの製造方法},
  howpublished = {登録特許},
  year = 2013,
  month  = {},
  note   = {特願2012-058163(2012/03/15), 特開2012-124532(2012/06/28), 特許第5401571号(2013/11/01)}
}


@misc{CTT100646425,
  author = {細野秀雄 and 神谷利夫 and 野村研二 and 雲見　日出也},
  title = {画像表示装置},
  howpublished = {登録特許},
  year = 2013,
  month  = {},
  note   = {特願2012-053401(2012/03/09), 特開2012-151485(2012/08/09), 特許第5401570号(2013/11/01)}
}


@misc{CTT100646419,
  author = {細野秀雄 and 野村研二 and 神谷利夫 and 藪田　久人 and 佐野　政史 and 岩崎　達哉},
  title = {電界効果型トランジスタの製造方法
},
  howpublished = {登録特許},
  year = 2014,
  month  = {},
  note   = {特願2012-058087(2012/03/15), 特開2012-160740(2012/08/23), 特許第5451801号(2014/01/10)}
}


@misc{CTT100659641,
  author = {細野秀雄 and 野村研二 and 山田　和夫 and 竹田　諭司},
  title = {表示装置とその製造方法},
  howpublished = {公開特許},
  year = 2013,
  month  = {},
  note   = {特願2011-240461(2011/11/01), 特開2013-097195(2013/05/20)}
}


@misc{CTT100665201,
  author = {細野秀雄 and 神谷利夫 and 野村研二 and 佐野　政史 and 中川　克己},
  title = {非晶質酸化物、及び電界効果型トランジスタ},
  howpublished = {登録特許},
  year = 2013,
  month  = {},
  note   = {特願2011-156723(2011/07/15), 特開2011-249823(2011/12/08), 特許第5337849号(2013/08/09)}
}


@misc{CTT100647505,
  author = {細野秀雄 and 野村研二 and 神谷利夫},
  title = {同時両極性電界効果型トランジスタ及びその製造方法},
  howpublished = {登録特許},
  year = 2015,
  month  = {},
  note   = {特願2011-044517(2011/03/01), 特開2012-182329(2012/09/20), 特許第5735306号(2015/04/24)}
}


@misc{CTT100649219,
  author = {細野秀雄 and 野村研二 and 神谷　利夫 and 藪田　久人 and 佐野　政史 and 岩崎　達哉},
  title = {電界効果型トランジスタの製造方法},
  howpublished = {登録特許},
  year = 2012,
  month  = {},
  note   = {特願2005-325369(2005/11/09), 特開2006-165531(2006/06/22), 特許第5126730号(2012/11/09)}
}


@misc{CTT100648170,
  author = {細野秀雄 and 野村研二 and 神谷利夫 and 佐藤　政史 and 中川　克己},
  title = {電界効果型トランジスタ},
  howpublished = {登録特許},
  year = 2012,
  month  = {},
  note   = {特願2005-325371(2005/11/09), 特開2006-173580(2006/06/29), 特許第5118812号(2012/10/26)}
}


@misc{CTT100648171,
  author = {細野秀雄 and 神谷利夫 and 野村研二 and 長田　芳幸},
  title = {電界効果型トランジスタ},
  howpublished = {登録特許},
  year = 2012,
  month  = {},
  note   = {特願2005-325364(2005/11/09), 特開2006-165527(2006/06/22), 特許第5118810号(2012/10/26)}
}


@misc{CTT100648169,
  author = {細野秀雄 and 神谷利夫 and 野村研二 and 田　透 and 岩崎　達哉},
  title = {発光装置及び表示装置},
  howpublished = {登録特許},
  year = 2012,
  month  = {},
  note   = {特願2005-325367(2005/11/09), 特開2006-186319(2006/07/13), 特許第5118811号(2012/10/26)}
}


@misc{CTT100646573,
  author = {細野秀雄 and 神谷利夫 and 野村研二 and 安部　勝美},
  title = {非晶質酸化物を利用した半導体デバイス},
  howpublished = {登録特許},
  year = 2012,
  month  = {},
  note   = {特願2005-325370(2005/11/09), 特開2006-165532(2006/06/22), 特許第5053537号(2012/08/03)}
}