論文

• J. Nishii, A. Ohtomo, M. Ikeda, Y. Yamada, K. Ohtani, H. Ohno, M. Kawasaki. High-throughput synthesis and characterization of Mg_1-xCa_xO films as a lattice and valence-matched gate dielectric for ZnO based field effect transistors, Applied Surface Science, Vol. 252, No. 7, pp. 2507-2511, Jan. 2006.  公式リンク  
  
• J. Nishii, A. Ohtomo, K. Ohtani, H. Ohno, M. Kawasaki. High-mobility field-effect transistors based on single-crystalline ZnO channels, Japanese Journal of Applied Physics Part 2-Letters & Express Letters, Vol. 44, No. 37-41, pp. L1193-L1195, Sept. 2005.  公式リンク  
  
• T. I. Suzuki, A. Ohtomo, A. Tsukazaki, F. Sato, J. Nishii, H. Ohno, M. Kawasaki. Hall and field-effect mobilities of electrons accumulated at a lattice-matched ZnO/ScAIMgO₄ heterointerface, Advanced Materials, Vol. 16, No. 21, pp. 1887-1890, Nov. 2004.  公式リンク  
  
• F. M. Hossain, J. Nishii, S. Takagi, T. Sugihara, A. Ohtomo, T. Fukumura, H. Koinuma, H. Ohno, M. Kawasaki. Modeling of grain boundary barrier modulation in ZnO invisible thin film transistors, Physica E-Low-Dimensional Systems & Nanostructures, Vol. 21, No. 2-4, pp. 911-915, Mar. 2004.  公式リンク  
  
• F. M. Hossain, J. Nishii, S. Takagi, A. Ohtomo, T. Fukumura, Hiroshi Fujioka, H. Ohno, H. Koinuma, M. Kawasaki. Modeling and simulation of polycrystalline ZnO thin-film transistors, Journal of Applied Physics, Vol. 94, No. 12, pp. 7768-7777, Dec. 2003.  公式リンク  
  
• J. Nishii, F. M. Hossain, S. Takagi, T. Aita, K. Saikusa, Y. Ohmaki, I. Ohkubo, S. Kishimoto, A. Ohtomo, T. Fukumura, F. Matsukura, Y. Ohno, H. Koinuma, H. Ohno, M. Kawasaki. High mobility thin film transistors with transparent ZnO channels, Japanese Journal of Applied Physics Part 2-Letters, Vol. 42, No. 4A, pp. L347-L349, Apr. 2003.  公式リンク  
  

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