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@article{CTT100609382,
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@article{CTT100609391,
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  title = {Quantum Hall effect in polar oxide heterostructures},
  journal = {Science},
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@article{CTT100609017,
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  title = {High mobility thin film transistors with transparent ZnO channels},
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  year = 2003,
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@inproceedings{CTT100611109,
  author = {A. Tsukazaki and S. Akasaka and K. Nakahara and A. Kamisawa and Y. Ohno and H. Ohno and A. Ohtomo and M. Kawasaki},
  title = {Fractional quantum Hall effect in MgZnO/ZnO heterostructures},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610077,
  author = {A. Tsukazaki and A. Ohtomo and S. Akasaka and K. Nakahara and Y. Ohno and H. Ohno and M. Kawasaki},
  title = {The fractional quantum Hall effect in MgZnO/ZnO based haterostructures},
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  year = 2009,
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@inproceedings{CTT100611084,
  author = {塚崎 敦 and 赤坂 俊輔 and 中原 健 and 神澤 公 and 大野 裕三 and 大野 英男 and 大友 明 and 川崎雅司},
  title = {2DEG移動度100,000 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup>を越えるMgZnO/ZnO界面の実現},
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  year = 2009,
}

@inproceedings{CTT100609735,
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  title = {Quantum Hall effect in ZnO},
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  year = 2008,
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@inproceedings{CTT100609618,
  author = {A. Ohtomo and A. Tsukazaki and T. Kita and Y. Ohno and H. Ohno and M. Kawasaki},
  title = {Quantum Hall effect in polar oxide heterostructures},
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  year = 2007,
}

@inproceedings{CTT100899205,
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@inproceedings{CTT100902022,
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@misc{CTT100609657,
  author = {塚崎 敦 and 大友 明 and 北 智洋 and 大野 裕三 and 大野 英男 and 川崎 雅司},
  title = {ZnO/MgZnO界面における量子ホール効果},
  year = 2007,
}

@misc{CTT100609672,
  author = {大友 明 and 塚崎 敦 and 北 智洋 and 大野 裕三 and 大野 英男 and 川崎雅司},
  title = {ZnOの量子ホール効果},
  year = 2007,
}