論文

• A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, M. Kawasaki. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO, Nature Materials, Vol. 4, No. 1, pp. 42-46, Jan. 2005.  公式リンク  
  
• M. Sumiya, A. Tsukazaki, S. Fuke, A. Ohtomo, H. Koinuma, M. Kawasaki. SIMS analysis of ZnO films co-doped with N and Ga by temperature gradient pulsed laser deposition, Applied Surface Science, Vol. 223, No. 1-3, pp. 206-209, Feb. 2004.  公式リンク  
  
• M. Sumiya, S. Fuke, A. Tsukazaki, K. Tamura, A. Ohtomo, M. Kawasaki, H. Koinuma. Quantitative control and detection of heterovalent impurities in ZnO thin films grown by pulsed laser deposition, Journal of Applied Physics, Vol. 93, No. 5, pp. 2562-2569, May 2003.  公式リンク  
  
• M. Sumiya, K. Yoshimura, T. Ito, K. Ohtsuka, S. Fuke, K. Mizuno, H. Koinuma, A. Ohtomo, M. Kawasaki. Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate, Journal of Applied Physics, Vol. 88, No. 2, pp. 1158-1165, July 2000.  公式リンク  
  
• K. Tamura, A. Ohtomo, K. Saikusa, Y. Osaka, T. Makino, Y. Segawa, M. Sumiya, S. Fuke, H. Koinuma, M. Kawasaki. Epitaxial growth of ZnO films on lattice-matched ScAlMgO₄(0001) substrates, Journal of Crystal Growth, Vol. 214, pp. 59-62, June 2000.  公式リンク  
  
• M. Sumiya, T. Ohnishi, K. Tanaka, A. Ohtomo, M. Kawasaki, H. Koinuma, K. Ohtsuka, S. Fuke. Control of the polarity and surface morphology of GaN films deposited on C-plane sapphire, MRS Internet Journal of Nitride Semiconductor Research, Vol. 4, No. Suppl. 1, pp. G6.23, Dec. 1999.  公式リンク  
  

国際会議発表 (査読有り)

• A. Ohtomo, M. Kawasaki, T. Koida, H. Koinuma, Y. Sakurai, Y. Yoshida, M. Sumiya, S. Fuke, T. Yasuda, Y. Segawa. Double heterostructure based on ZnO and Mg_xZn_1-xO, Silicon Carbide, Iii-Nitrides and Related Materials, Pts 1 and 2, Vol. 264-2, pp. 1463-1466, Dec. 1998.  公式リンク  
  

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