@article{CTT100633375,
  author = {伊藤隆司 and 酒井義雄},
  title = {GaAs-MIS-FET},
  journal = {応用物理},
  year = 1974,
}

@article{CTT100634502,
  author = {伊藤隆司 and 酒井義雄},
  title = {GaAs-MIS-FET},
  journal = {応用物理},
  year = 1974,
}

@article{CTT100634503,
  author = {Takashi Ito and Yoshio Sakai},
  title = {The GaAs Inversion-Type MIS Transistors},
  journal = {Solid-State Electronics},
  year = 1974,
}

@article{CTT100615113,
  author = {伊藤隆司 and 酒井 義雄},
  title = {GaAｓ-絶縁膜界面における変性層トラップ密度と充放電特性},
  journal = {電気学会論文誌},
  year = 1974,
}

@article{CTT100634504,
  author = {寺尾博 and 伊藤隆司 and 酒井義雄},
  title = {InAs-MIS構造の界面特性と電界効果トランジスタへの応用},
  journal = {電気学会論文誌},
  year = 1974,
}

@article{CTT100605087,
  author = {伊藤隆司 and 酒井義雄},
  title = {GaAs表面への絶縁層の生成と界面特性},
  journal = {電気学会論文誌},
  year = 1973,
}