論文

• Kanetake Takasaki, Kiyoshi Irino, Takayuki Aoyama, Youichi Momiyama, Toshiro Nakanishi, Yasuyuki Tamura, Takashi Ito. Impact of Nitrogen Profile in Gate Nitrided-Oxide on Deep-Submicron CMOS Performance and Reliability, Fujitsu Sci. and Tech. Jour., Fujitsu, Vol. 39, No. 1, pp. 40-51, Jan. 2003.
• Kanetake Takasaki, Kiyoshi Irino, Takayuki Aoyama, Youichi Momiyama, Toshiro Nakanishi, Yasuyuki Tamura, Takashi Ito. Impact of Nitrogen Profile in Gate Nitrided-Oxide on Deep-Submicron CMOS Performance and Reliability, FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, Fijitsu, Vol. 39, No. 1, pp. 40-51, 2003.
• Takayuki Aoyama, Kunihiro Suzuki, Hiroko Tashiro, Yoko Toda, Tatsuya Yamazaki, Kanetake Takasaki, Takashi Ito. Effect of Fluorine on Boron Diffusion in Thin Silicon Dioxides and Oxynitride, Journal of Applied Physics, American Institute of Physics, Vol. 77, No. 1, pp. 417-419, Sept. 1994.
• Takayuki Aoyama, Kunihiro Suzuki, Hiroko Tashiro, Tatsuya Yamazaki, Yoshihiro Arimoto, Takashi Ito. Boron Diffusion Through Pure Silicon Oxide and Oxynitride for Metal-Oxide-Semiconductor Devices, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 140, No. 12, pp. 3624-3627, Dec. 1993.
• Takayuki Aoyama, Tatsuya Yamazaki, Takashi Ito. Silicon Surface Cleaning Using Photoexcited Fluorine Gas Diluted with Hydrogen, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 140, No. 6, pp. 1705-1708, June 1993.
• Takayuki Aoyama, Tatsuya Yamazaki, Takashi Ito. Surface Cleaning for Si Epitaxy Using Photoexcited Fluorine Gas, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 140, No. 2, pp. 366-371, Feb. 1993.
• Takayuki Aoyama, Tatsuya Yamazaki, Takashi Ito. Nonuniformities of Native Oxide on Si(001) Surfaces Formed during Wet Chemical Cleaning, Applied Phisics Letters, American Institute of Physics, Vol. 61, No. 1, pp. 102-104, July 1992.
• Hiroki Ogawa, Naozumi Terada, Kazuhisa Sugiyama, Kazunori Moriki, Noriyuki Miyata, Takayuki Aoyama, Rinshi Sugino, Takashi Ito, Takeo Hattori. Silicon-Hydrogen Bonds in Silicon Oxide Near the SiO2/Si Interface, Applied Surface Science, ELSEVIER, Vol. 56-58, pp. 836-840, 1992.
• Takayuki Aoyama, Tatsuya Yamazaki, Takashi Ito. Removing Native Oxide from Si (001) Surfaces using Photoexcited Fluorine Gas, Applied Phisics Letters, American Institute of Physics, Vol. 59, No. 11, pp. 2576-2578, Nov. 1991.
• Kazuhisa Sugiyama, Takayuki lgarashi, Kazunori Moriki, Yoshikatsu Nagasawa, Takayuki Aoyama, Rinshi Sugino, Takashi Ito, Takeo Hattori. Silicon-Hydrogen Bonds in Native Oxides Formed During Wet Chemical Treatments, Japanese Journal of Applied Physics, The Japan Society of Applied Phisics, Vol. 29, No. 12, pp. L2401-L2404, Dec. 1990.
• Tatsuya Yamazaki, Norio Miyata, Takayuki Aoyama, Takashi Ito. Investigation of Thermal Removal of Native Oxide from Si (100) Surfaces in Hydrogen for Low-Temperature Si CVD Epitaxy, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 139, No. 4, pp. 1175-1180, Apr. 1990.
• Toshihiro Sugii, Takayuki Aoyama, Takashi Ito. Low-Temperature Growth of SiC on Si by Gas-Source MBE, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 137, No. 3, pp. 989-992, Mar. 1990.
• Takayuki Aoyama, Toshihiro Sugii, Takashi Ito. Determination of Band Line-up in βSiC/Si Heterojunction for Si-HBTs, Applied Surface Science, ELSEVIER, Vol. 41, No. 42, pp. 584-586, Nov. 1989.
• Toshihiro Sugii, Takayuki Aoyama, Takashi Ito. Polycrystalline SiC for A Wide-Gap Emitter of Si-HBTs, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 136, No. 10, pp. 3111-3115, Oct. 1989.

国際会議発表 (査読有り)

• Takayuki Aoyama, Tatsuya Yamazaki, Takashi Ito. Surface Cleaning for Silicon Epitaxy Using Photoexcited Fluorine Gas, Proc. of MRS Symposium, Proc. of MRS Symposium, 1993.
• Takashi Ito, Rinshi Sugino, Yasuhiro Sato, Masaki Okuno, Akira Osawa, Takayuki Aoyama, Tatsuya Yamazaki, Yoshihiro Arimoto. Photo-Excited Cleaning of Silicon with Chlorine and Fluorine, MRS Symp. Proceeding, MRS Symp. Proceeding, 1992.
• Toshihiro Sugii, Takayuki Aoyama, Yuji Furumura, Takashi Ito. SiC Growth and Its Application to Si-HBTs, Proc. of American Vacuum Society Topical Symp. on Si Based Heterostructures, Proc. of American Vacuum Society Topical Symp. on Si Based Heterostructures, p. 124, 1990.
• Kazuhisa Sugiyama, Takayuki lgarashi, Kazunori Moriki, Yoshikatsu Nagasawa, Takayuki Aoyama, Rinshi Sugino, Takashi Ito, Takeo Hattori. Silicon- Hydrogen Bonds in Native Oxides Formed During Wet Chemical Treatments, Ext. Abst. of Int. Conf. on SSDM, Ext. Abst. of Int. Conf. on SSDM, 1990.
• Takayuki Aoyama, Toshihiro Sugii, Takashi Ito. Determination of Band Lineup In β-SiC/Si Hetero Junction for HBTs, Abs. 2nd Int. Conf. on Formation of Semiconductor Interfaces, Abs. 2nd Int. Conf. on Formation of Semiconductor Interfaces, p. 143, 1988.

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