@article{CTT100615257,
  author = {Kanetake Takasaki and Kiyoshi Irino and Takayuki Aoyama and Youichi Momiyama and Toshiro Nakanishi and Yasuyuki Tamura and Takashi Ito},
  title = {Impact of Nitrogen Profile in Gate Nitrided-Oxide on Deep-Submicron CMOS Performance and Reliability},
  journal = {Fujitsu Sci. and Tech. Jour.},
  year = 2003,
}

@article{CTT100634586,
  author = {Kanetake Takasaki and Kiyoshi Irino and Takayuki Aoyama and Youichi Momiyama and Toshiro Nakanishi and Yasuyuki Tamura and Takashi Ito},
  title = {Impact of Nitrogen Profile in Gate Nitrided-Oxide on Deep-Submicron CMOS Performance and Reliability},
  journal = {FUJITSU SCIENTIFIC & TECHNICAL JOURNAL},
  year = 2003,
}

@article{CTT100634584,
  author = {Rinji Sugino and Toshiro Nakanishi and Kanetake Takasaki and Takashi Ito},
  title = {Identification of MOS Gate Dielectric Breakdown Spot Using High Selectivity Cl Radical Etching Technique},
  journal = {Journal of The Electrochemical Society},
  year = 1996,
}

@article{CTT100634568,
  author = {Yasuhisa Sato and Rinshi Sugino and Masaki Okuno and Toshiro Nakanishi and Takashi Ito},
  title = {Electrical Characteristics of Silicon Devices after UV-Excited Cleaning},
  journal = {IEICE Transaction on Electronics},
  year = 1993,
}

@inproceedings{CTT100634732,
  author = {Rinshi Sugino and Toshiro Nakanishi and Kanetake Takasaki and Takashi Ito},
  title = {Identification of MOS Gate Dielectric-Breakdown Spot Using High-Selectivity Etching},
  booktitle = {Ext. Abs. of Int. Conf. on SSDM},
  year = 1995,
}