@article{CTT100658804,
  author = {小山将央 and M. Casse and R. Coquand and S. Barraud and C. Vizioz and C. Comboroure and P. Perreau and V. Maffini-Alvaro and C. Tabone, and L. Tosti and S. Barnola and V. Delaye and F. Aussenac and G. Ghibaudo and HIROSHI IWAI and G. Reimbold},
  title = {Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate silicon nanowire MOSFETs},
  journal = {Solid-State Electronics},
  year = 2013,
}

@inproceedings{CTT100673375,
  author = {小山将央 and M. Casse and R. Coquand and S. Barraud and G. Ghibaudo and HIROSHI IWAI and G. Reimbold},
  title = {Influence of Technological and Geometrical Parameters on Low-frequency Noise in SOI Omega-gate Nanowire MOSFETs},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673327,
  author = {小山将央 and M. Casse and S. Barraud and G. Ghibaudo and HIROSHI IWAI and G. Reimbold},
  title = {Assessment of Technological Device Parameters by Low-frequency Noise Investigation in SOI Omega-gate Nanowire NMOS FETs},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100658354,
  author = {Kazuki Matsumoto and 小山将央 and Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Size dependent resistivity change of Ni-silicides in nano-region},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100649144,
  author = {小山将央 and Naoto Shigemori and Kenji Ozawa and Kiichi Tachi and Kuniyuki KAKUSHIMA and O. Nakatsuka and 大毛利健治 and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Keisaku Yamada and HIROSHI IWAI},
  title = {Si/Ni-Silicide Schottky Junctions with Atomically Flat Interfaces Using NiSi2 Source},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654593,
  author = {Kazuki Matsumoto and 小山将央 and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Ni silicidation for Si fin and nanowire structures},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658393,
  author = {宋  禛漢 and 小山将央 and Kazuki Matsumoto and Kuniyuki KAKUSHIMA and 中塚理 and 大毛利健治 and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Keisaku Yamada and HIROSHI IWAI},
  title = {Atomically flat Ni-silicide/Si interface using NiSi2 sputtering},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658611,
  author = {Kazuki Matsumoto and 小山将央 and Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical Analyses of Nickel Silicide Formed on Si Nanowires with 10-nm-width},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658633,
  author = {M. Casse and S. Barraud and R. Coquand and 小山将央 and D. Cooper and C. Vizioz and C. Comboroure and P. Perreau and V. Maffini-Alvaro and C. Tabone and L. Tosti and S. Barnola and V. Delaye and F. Aussenac and G. Ghibaudo and HIROSHI IWAI and G. Reimbold},
  title = {Strain-Enhanced Performance of Si-Nanowire FETs},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100658711,
  author = {小山将央 and M. Casse and R. Coquand and S. Barraud and G. Ghibaudo and HIROSHI IWAI and G. Reimbold},
  title = {Study of Low-frequency Noise in SOI Tri-gate Silicon Nanowire MOSFETs},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100660885,
  author = {小山将央 and M. Casse and R. Coquand and S. Barraud and G. Ghibaudo and HIROSHI IWAI and G. Reimbold},
  title = {Influence of Device Scaling on Low-frequency Noise in SOI Tri-gate Si Nanowire N-and PMOS FETs},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100657218,
  author = {Kazuki Matsumoto and 小山将央 and Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Ni silicidation for Si Fin and nanowire strucures},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657217,
  author = {Kazuki Matsumoto and 小山将央 and Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Ni silicidation for Si Fin and nanowire strucures},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657574,
  author = {小山将央 and M. Casse and R. Coquand and S. Barraud and HIROSHI IWAI and G. Ghibaudo and G. Reimbold},
  title = {Study of Carrier Transport in Strained and Unstrained SOI Tri-gate and Omega-gate Si Nanowire MOSFETs},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100628215,
  author = {松本一輝 and 小山将央 and 呉研 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {酸化膜被覆型SiナノワイヤおよびSi Fin構造におけるNiシリサイド成長機構の検討},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622684,
  author = {小山将央 and Naoto Shigemori and Hideaki Arai and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Lateral encroachment of Ni silicide into silicon nanowire},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100616068,
  author = {小山 将央 and 茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 西山彰 and 筒井一生 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {窒素導入によるSiナノワイヤ内へのNiシリサイド侵入抑制機構の検討},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630960,
  author = {小山将央 and 茂森直登 and 新井英朗 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Lateral encroachment of Ni silicide into Si nanowire},
  booktitle = {},
  year = 2010,
}