@article{CTT100647421,
  author = {ダリューシュザデ and Takashi Kanda and 山下晃司 and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Capacitance-Voltage Characterization of La2O3 Metal-Oxide-Semiconductor Structures on Ino.53Ga.0.47As Substrate with Different Surface Treatment Methods},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100647425,
  author = {山下晃司 and 沼尻 侑也 and M. Watanabe and Kuniyuki KAKUSHIMA and HIROSHI IWAI and Hiroshi Nohira},
  title = {Study of High-k/Ino.53Ga.0.47As interface by Hard X-ray Photoemission Spectroscopy},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@inproceedings{CTT100628213,
  author = {沢尻 侑也 and 山下晃司 and 小松 新 and ダリューシュザデ and 角嶋邦之 and 岩井洋 and 野平博司},
  title = {AR-XPSによる(NH４) ２S処理したIn0.53Ga0.47As表面の化学結合状態の評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100654673,
  author = {Hiroshi Nohira and 小松新 and 山下晃司 and Kuniyuki KAKUSHIMA and HIROSHI IWAI and Y. Hioshi and K. Sawano and Y. Shiraki},
  title = {XPS Study on Chemical Bonding States of high-k/high-μ Gate Stacks for Advanced CMOS},
  booktitle = {ECS Transactions},
  year = 2011,
}

@inproceedings{CTT100616073,
  author = {山下 晃司 and 角嶋邦之 and 岩井洋},
  title = {HfO2/La2O３/In0.53Ga0.47As構造の熱安定性},
  booktitle = {},
  year = 2010,
}