@article{CTT100694991,
  author = {岡本昌二 and 堀口剛司 and 冨永真志 and 西村正 and 藤田英明 and 赤木泰文 and 木ノ内伸一 and 大井健史},
  title = {IGBT 物理モデルの負荷短絡保護回路への適用},
  journal = {電気学会論文誌D},
  year = 2014,
}

@article{CTT100694989,
  author = {堀口 剛司 and 塚本 剛平 and 冨永 真志 and 西村 正 and 藤田 英明 and 赤木 泰文 and 木ノ内 伸一 and 大井 健史 and 小山 正人},
  title = {物理モデルに基づく並列接続IGBT のPWM連続動作時における接合温度解},
  journal = {電気学会論文誌D},
  year = 2014,
}

@article{CTT100678924,
  author = {J.Hasegawa and K.Konishi and Y.Nakamura and K.Otsuka and S.Nakata and Y. Nakamine and T. Nishimura and M. Hatano},
  title = {Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation},
  journal = {Materials Science Forum},
  year = 2014,
}

@inproceedings{CTT100709183,
  author = {Junichi Hasegawa and Munetaka Noguchi and Masayuki Furuhashi and Shuhei Nakata and Takayuki Iwasaki and Tetsuo Kodera and Tadashi Nishimura and Mutsuko Hatano},
  title = {Measurement of the SiO2/SiC interface state density in a wid energy-level range using capacitance transient spectroscopy},
  booktitle = {},
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}

@inproceedings{CTT100722967,
  author = {二宮大 and 西村正 and 藤田英明 and 赤木泰文},
  title = {高精度な電力変換回路設計用のSiC-MOSFET回路シミュレーションモデルの開発},
  booktitle = {電気学会研究会資料},
  year = 2015,
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@inproceedings{CTT100665407,
  author = {J. Hasegawa and K.Konishi and Y.Nakamura and K.Otsuka and Y.Nakamine and T.Nishimura and M.Hatano},
  title = {Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation},
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  year = 2013,
}

@inproceedings{CTT100722997,
  author = {岡本昌二 and 冨永真志 and 西村正 and 藤田英明 and 赤木泰文 and 堀口剛司 and 木ノ内伸一 and 大井健史},
  title = {IGBT物理モデルによる短絡時のスイッチング動作解析},
  booktitle = {電気学会 産業応用部門大会},
  year = 2013,
}

@inproceedings{CTT100663677,
  author = {塚本剛平 and 冨永真志 and 西村 正 and 藤田英明 and 赤木泰文},
  title = {物​理​モ​デ​ル​に​基​づ​く​I​G​B​T​並​列​駆​動​時​に​お​け​る​接​合​温​度​解​析​},
  booktitle = {電気学会 産業応用部門大会},
  year = 2012,
}