論文

• 鈴木 拓也, 久保田透, Ahmet Parhat, HIROSHI IWAI. La2O3 gate insulators prepared by atomic layer deposition: Optimal growth conditions and MgO/La2O3 stacks for improved metal-oxide-semiconductor characteristics, Journal of Vacuum Science & Technology A, Vol. 30, No. 5, pp. 051507-1-8, July 2012.
• マイマイティ マイマイティレャアティ, 久保田透, 関拓也, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 片岡好則, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Oxide and interface trap densities estimation in ultrathin W/ La2O3/Si MOS capacitors, Microelectronics Reliability, Vol. 52, No. 6, pp. 1039-1042, June 2012.
• 来山大祐, 久保田透, Tomotsune Koyanagi, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. [ 183] D. Kitayama, T. Kubota, T. Koyonagi, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai, “Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5nm* Adjustment of Amount of Residual Oxygen Atoms in Metal Layer”, Japanese Journal of Applied Physics, Vol.50, No.10, pp.10PA05-1-5, October, 2011, Japanese Journal of Applied Physics, Vol. 50, No. 10, pp. 10PA05-1-5, Oct. 2011.

国際会議発表 (査読なし・不明)

• 来山大祐, 久保田 透, Tomotsune Koyanagi, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Precise Control of Silicate Reaction with La2O3 Gate Dielectrics towards Equivalent Oxide Thickness of 0.5 nm, Taiwan-Japan Workshop on “Nano Devices”, 2011.

国内会議発表 (査読なし・不明)

• 久保田透, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Spectroscopic analysis of interface state density in high-k/Si structure, 複合創造領域シンポジウム, 2010.

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